Patent
US 10,976,297FIG. 4 is an SEM image of a functionalized device. [0015]
FIG. 5. It is clear that the functionalization was successful and coverage depends on the nanoparticle type. Device Testing [0035] Following fabrication, the …
FIG. 6 was used for the liquid fuel testing. The chip was positioned at the center, so that the probes could reach the pattered gold contacts. Liquid fuel was …
FIG. 8. The device had a relatively fast negative response with resistance change of 7% within 10 minutes. It should be noted that the mobility and carrier …
FIG. 10 where the measured sheet resistance before and after isopropanol rinse are compared. The observed trend was valid for all tested chips. [0038] …
FIG. 13. The change in the performance of I TO-Gr device 2 exposed to S₈+ BzT and S₈+ Th was the most striking-signal sign reversal as well as change in …
| — |
Duration | 10–30 seconds | — |
Thickness | 50–80 nm | — |
Thickness | 25–55 nm | — |
Thickness | 20–100 nm | — |
Temperature | 0.1–10 k | — |
Duration | 5–15 minutes | — |
Duration | ≥ 30 minutes | — |
FIG. 4 is an SEM image of a functionalized device. [0015]
FIG. 5. It is clear that the functionalization was successful and coverage depends on the nanoparticle type. Device Testing [0035] Following fabrication, the …
FIG. 6 was used for the liquid fuel testing. The chip was positioned at the center, so that the probes could reach the pattered gold contacts. Liquid fuel was …
FIG. 8. The device had a relatively fast negative response with resistance change of 7% within 10 minutes. It should be noted that the mobility and carrier …
FIG. 10 where the measured sheet resistance before and after isopropanol rinse are compared. The observed trend was valid for all tested chips. [0038] …
FIG. 13. The change in the performance of I TO-Gr device 2 exposed to S₈+ BzT and S₈+ Th was the most striking-signal sign reversal as well as change in …
| — |
Duration | 10–30 seconds | — |
Thickness | 50–80 nm | — |
Thickness | 25–55 nm | — |
Thickness | 20–100 nm | — |
Temperature | 0.1–10 k | — |
Duration | 5–15 minutes | — |
Duration | ≥ 30 minutes | — |
FIG. 4 is an SEM image of a functionalized device. [0015]
FIG. 5. It is clear that the functionalization was successful and coverage depends on the nanoparticle type. Device Testing [0035] Following fabrication, the …
FIG. 6 was used for the liquid fuel testing. The chip was positioned at the center, so that the probes could reach the pattered gold contacts. Liquid fuel was …
FIG. 8. The device had a relatively fast negative response with resistance change of 7% within 10 minutes. It should be noted that the mobility and carrier …
FIG. 10 where the measured sheet resistance before and after isopropanol rinse are compared. The observed trend was valid for all tested chips. [0038] …
FIG. 13. The change in the performance of I TO-Gr device 2 exposed to S₈+ BzT and S₈+ Th was the most striking-signal sign reversal as well as change in …
| — |
Duration | 10–30 seconds | — |
Thickness | 50–80 nm | — |
Thickness | 25–55 nm | — |
Thickness | 20–100 nm | — |
Temperature | 0.1–10 k | — |
Duration | 5–15 minutes | — |
Duration | ≥ 30 minutes | — |
FIG. 4 is an SEM image of a functionalized device. [0015]
FIG. 5. It is clear that the functionalization was successful and coverage depends on the nanoparticle type. Device Testing [0035] Following fabrication, the …
FIG. 6 was used for the liquid fuel testing. The chip was positioned at the center, so that the probes could reach the pattered gold contacts. Liquid fuel was …
FIG. 8. The device had a relatively fast negative response with resistance change of 7% within 10 minutes. It should be noted that the mobility and carrier …
FIG. 10 where the measured sheet resistance before and after isopropanol rinse are compared. The observed trend was valid for all tested chips. [0038] …
FIG. 13. The change in the performance of I TO-Gr device 2 exposed to S₈+ BzT and S₈+ Th was the most striking-signal sign reversal as well as change in …
| — |
Duration | 10–30 seconds | — |
Thickness | 50–80 nm | — |
Thickness | 25–55 nm | — |
Thickness | 20–100 nm | — |
Temperature | 0.1–10 k | — |
Duration | 5–15 minutes | — |
Duration | ≥ 30 minutes | — |