SYSTEMS AND METHODS FOR GROWTH OF SILICON CARBIDE OVER A LAYER COMPRISING GRAPHENE AND/OR HEXAGONAL BORON NITRIDE AND RELATED ARTICLES | Matter42 Literature
Patent
Atlas literature
Patent
US 12,469,699 B2
SYSTEMS AND METHODS FOR GROWTH OF SILICON CARBIDE OVER A LAYER COMPRISING GRAPHENE AND/OR HEXAGONAL BORON NITRIDE AND RELATED ARTICLES
Rachael L. Myers-Ward, Jeehwan Kim, Kuan Qiao, Wei Kong et al.
Massachusetts Institute of Technology, Cambridge, MA (US), The Government of the United States of America, as Represented by the Secretary of the Navy, Arlington, VA (US), ROHM Co., Ltd., Kyoto (JP)·Nov. 11, 2025·US
Drawings
Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1
FIG. 1A is a schematic illustration of an exemplary article 1000 comprising a substrate 106 and a layer 104 comprising graphene and/or hexagonal boron nitride …
FIG. 2
FIG. 2A is a Nomarski micrograph of a SiC film grown on what was originally (graphene layer)/SiC, with a ramping to growth temperature conducted in hydrogen …
FIG. 3
FIG. 3A is a Nomarski micrograph of a SiC film grown by remote epitaxy over an on-axis SiC substrate, with a gra- phene layer in between the substrate and the …
FIG. 4
FIG. 4A is a Nomarski micrograph of a sample ramped in Argon (Ar) and grown in Ar for 10 min and then 30 min in H₂ at 1450° C., according to one set of …
FIG. 5
FIG. 5A is a scanning electron microscopy (SEM) image of surface morphology of a sample grown with growth conditions from
FIG. 6
FIG. 6 is a high resolution transmission electron micros- copy (HRTEM) image (top) showing pseudo graphene (see, e.g., bottom reference figure) after SiC film …
FIG. 7
FIG. 7B is an EBSD image of a sample grown at 1620° C. for 20 min in 50 slm Ar over a 4° off-axis substrate, according to one set of embodiments;
FIG. 8
FIG. 8A is an X-ray Diffraction (XRD) rocking curve of the (002) and (004) for SiC grown over a 4° off-axis substrate, according to one set of embodiments;
FIG. 9
FIG. 9 is transmission electron microscopy (TEM) images (left and right), and an SEM image (center) corresponding to
FIG. 10
FIG. 10B is an SEM image (“sub”, top) of a substrate after exfoliation and an SEM image (“tape”, bottom) of an exfoliated SiC film grown by remote epitaxy at …
FIG. 11
FIG. 11B. Removed layer 120 may then be disposed on a second substrate 130, such as a SiC substrate, as shown in
FIG. 12
FIG. 12F illustrate a method 300 of graphene- based and/or hBN-based layer fabrication and transfer using a stressor layer and tape, according to one set of …
FIG. 25
FIG. 25 5A) of the sample and it was clear that there were grain boundaries across the surface of the grown SiC film. While there were grain boundaries, it was …
Claims
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1 independent · 15 dependent
1
IndependentSiCgraphenehBN
A method, comprising: forming a silicon carbide (SiC) film over a layer com-prising graphene and/or hexagonal boron nitride (hBN) that is over a substrate, wherein the SiC film is single crystalline; wherein at least a portion of the formation of the SiC film occurs in the presence of a gaseous material comprising an inert gas, and wherein, during the forming of the SiC film, the tempera-ture of an environment of the layer comprising the graphene and/or hBN over the substrate is ramped from a first temperature to a second, higher temperature, wherein the first temperature and the second tempera-ture are greater than or equal to 1350° C. and less than or equal to 1800° C.
2
Dependent← claim 1inert gas (Argon, Helium, and/or nitrogen)
The method of claim 1, wherein the inert gas comprises Argon, Helium, and/or nitrogen (N₂).
3
Dependent← claim 1Ar
The method of claim 1, wherein the inert gas comprises Argon.
4
Dependent← claim 1SiC
The method of claim 1, further comprising separating the SiC film and the substrate.
6
Dependent← claim 1SiC
The method of claim 1, wherein forming the SiC film over the layer comprises using the substrate as a seed for the SiC film.
7
Dependent← claim 1SiC
The method of claim 1, wherein a surface of the substrate over which the layer is positioned during growth is a SiC surface.
8
Dependent← claim 1
The method of claim 1, wherein the substrate is a semiconductor substrate.
9
Dependent← claim 1SiC
The method of claim 1, wherein the substrate is made, in whole or in part, of SiC having an offcut angle of between or equal to 0° and 10°.
10
Dependent← claim 14H-SiC6H-SiC
The method of claim 1, wherein the substrate is made, in whole or in part, of (0001) 4H—SiC and/or (0001) 6H—SiC.
11
Dependent← claim 1
The method of claim 1, wherein the environment of the layer comprising the graphene and/or hBN over the substrate further comprises the gaseous material comprising the inert gas, wherein a flow rate of the gaseous material is between or equal to 10 standard liters per minute (slm) and 80 slm.
12
Dependent← claim 1III-Nitride substrate
The method of claim 1, wherein the substrate is made, in whole or in part, of a III-Nitride.
13
Dependent← claim 1
The method of claim 1, wherein the second tempera-ture is greater than or equal to 1620° C. and less than or equal to 1800° C.
14
Dependent← claim 1graphenehBN
The method of claim 1, further comprising forming the layer over the substrate.
16
Dependent← claim 1graphenehBN
The method of claim 1, wherein the layer is single crystalline. ∗ ∗ ∗ ∗ ∗
Device structures
Layer stacks claimed or described, ordered top of device to substrate.
SiC film on graphene/hBN release layer on substrate
SiCgrown film
graphenerelease layer
substratesubstrate
Materials
Materials described outside the worked examples.
silicon carbide film
SiC
Grown Film
graphene
Release Layer
Process steps
Additional fabrication and treatment steps described in the patent.
1
Epitaxial Growth
Step 1
Temperature
1350, 1800°C
Ambient
inert gas
Process details
Characterization
Measurements and analyses referenced in the patent, with their drawing references.
sem
SEM
FIG. 5A is a scanning electron microscopy (SEM) image of surface morphology of a sample grown with growth conditions from
SYSTEMS AND METHODS FOR GROWTH OF SILICON CARBIDE OVER A LAYER COMPRISING GRAPHENE AND/OR HEXAGONAL BORON NITRIDE AND RELATED ARTICLES
Rachael L. Myers-Ward, Jeehwan Kim, Kuan Qiao, Wei Kong et al.
Massachusetts Institute of Technology, Cambridge, MA (US), The Government of the United States of America, as Represented by the Secretary of the Navy, Arlington, VA (US), ROHM Co., Ltd., Kyoto (JP)·Nov. 11, 2025·US
Drawings
Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1
FIG. 1A is a schematic illustration of an exemplary article 1000 comprising a substrate 106 and a layer 104 comprising graphene and/or hexagonal boron nitride …
FIG. 2
FIG. 2A is a Nomarski micrograph of a SiC film grown on what was originally (graphene layer)/SiC, with a ramping to growth temperature conducted in hydrogen …
FIG. 3
FIG. 3A is a Nomarski micrograph of a SiC film grown by remote epitaxy over an on-axis SiC substrate, with a gra- phene layer in between the substrate and the …
FIG. 4
FIG. 4A is a Nomarski micrograph of a sample ramped in Argon (Ar) and grown in Ar for 10 min and then 30 min in H₂ at 1450° C., according to one set of …
FIG. 5
FIG. 5A is a scanning electron microscopy (SEM) image of surface morphology of a sample grown with growth conditions from
FIG. 6
FIG. 6 is a high resolution transmission electron micros- copy (HRTEM) image (top) showing pseudo graphene (see, e.g., bottom reference figure) after SiC film …
FIG. 7
FIG. 7B is an EBSD image of a sample grown at 1620° C. for 20 min in 50 slm Ar over a 4° off-axis substrate, according to one set of embodiments;
FIG. 8
FIG. 8A is an X-ray Diffraction (XRD) rocking curve of the (002) and (004) for SiC grown over a 4° off-axis substrate, according to one set of embodiments;
FIG. 9
FIG. 9 is transmission electron microscopy (TEM) images (left and right), and an SEM image (center) corresponding to
FIG. 10
FIG. 10B is an SEM image (“sub”, top) of a substrate after exfoliation and an SEM image (“tape”, bottom) of an exfoliated SiC film grown by remote epitaxy at …
FIG. 11
FIG. 11B. Removed layer 120 may then be disposed on a second substrate 130, such as a SiC substrate, as shown in
FIG. 12
FIG. 12F illustrate a method 300 of graphene- based and/or hBN-based layer fabrication and transfer using a stressor layer and tape, according to one set of …
FIG. 25
FIG. 25 5A) of the sample and it was clear that there were grain boundaries across the surface of the grown SiC film. While there were grain boundaries, it was …
Claims
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1 independent · 15 dependent
1
IndependentSiCgraphenehBN
A method, comprising: forming a silicon carbide (SiC) film over a layer com-prising graphene and/or hexagonal boron nitride (hBN) that is over a substrate, wherein the SiC film is single crystalline; wherein at least a portion of the formation of the SiC film occurs in the presence of a gaseous material comprising an inert gas, and wherein, during the forming of the SiC film, the tempera-ture of an environment of the layer comprising the graphene and/or hBN over the substrate is ramped from a first temperature to a second, higher temperature, wherein the first temperature and the second tempera-ture are greater than or equal to 1350° C. and less than or equal to 1800° C.
2
Dependent← claim 1inert gas (Argon, Helium, and/or nitrogen)
The method of claim 1, wherein the inert gas comprises Argon, Helium, and/or nitrogen (N₂).
3
Dependent← claim 1Ar
The method of claim 1, wherein the inert gas comprises Argon.
4
Dependent← claim 1SiC
The method of claim 1, further comprising separating the SiC film and the substrate.
6
Dependent← claim 1SiC
The method of claim 1, wherein forming the SiC film over the layer comprises using the substrate as a seed for the SiC film.
7
Dependent← claim 1SiC
The method of claim 1, wherein a surface of the substrate over which the layer is positioned during growth is a SiC surface.
8
Dependent← claim 1
The method of claim 1, wherein the substrate is a semiconductor substrate.
9
Dependent← claim 1SiC
The method of claim 1, wherein the substrate is made, in whole or in part, of SiC having an offcut angle of between or equal to 0° and 10°.
10
Dependent← claim 14H-SiC6H-SiC
The method of claim 1, wherein the substrate is made, in whole or in part, of (0001) 4H—SiC and/or (0001) 6H—SiC.
11
Dependent← claim 1
The method of claim 1, wherein the environment of the layer comprising the graphene and/or hBN over the substrate further comprises the gaseous material comprising the inert gas, wherein a flow rate of the gaseous material is between or equal to 10 standard liters per minute (slm) and 80 slm.
12
Dependent← claim 1III-Nitride substrate
The method of claim 1, wherein the substrate is made, in whole or in part, of a III-Nitride.
13
Dependent← claim 1
The method of claim 1, wherein the second tempera-ture is greater than or equal to 1620° C. and less than or equal to 1800° C.
14
Dependent← claim 1graphenehBN
The method of claim 1, further comprising forming the layer over the substrate.
16
Dependent← claim 1graphenehBN
The method of claim 1, wherein the layer is single crystalline. ∗ ∗ ∗ ∗ ∗
Device structures
Layer stacks claimed or described, ordered top of device to substrate.
SiC film on graphene/hBN release layer on substrate
SiCgrown film
graphenerelease layer
substratesubstrate
Materials
Materials described outside the worked examples.
silicon carbide film
SiC
Grown Film
graphene
Release Layer
Process steps
Additional fabrication and treatment steps described in the patent.
1
Epitaxial Growth
Step 1
Temperature
1350, 1800°C
Ambient
inert gas
Process details
Characterization
Measurements and analyses referenced in the patent, with their drawing references.
sem
SEM
FIG. 5A is a scanning electron microscopy (SEM) image of surface morphology of a sample grown with growth conditions from
SYSTEMS AND METHODS FOR GROWTH OF SILICON CARBIDE OVER A LAYER COMPRISING GRAPHENE AND/OR HEXAGONAL BORON NITRIDE AND RELATED ARTICLES
Rachael L. Myers-Ward, Jeehwan Kim, Kuan Qiao, Wei Kong et al.
Massachusetts Institute of Technology, Cambridge, MA (US), The Government of the United States of America, as Represented by the Secretary of the Navy, Arlington, VA (US), ROHM Co., Ltd., Kyoto (JP)·Nov. 11, 2025·US
Drawings
Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1
FIG. 1A is a schematic illustration of an exemplary article 1000 comprising a substrate 106 and a layer 104 comprising graphene and/or hexagonal boron nitride …
FIG. 2
FIG. 2A is a Nomarski micrograph of a SiC film grown on what was originally (graphene layer)/SiC, with a ramping to growth temperature conducted in hydrogen …
FIG. 3
FIG. 3A is a Nomarski micrograph of a SiC film grown by remote epitaxy over an on-axis SiC substrate, with a gra- phene layer in between the substrate and the …
FIG. 4
FIG. 4A is a Nomarski micrograph of a sample ramped in Argon (Ar) and grown in Ar for 10 min and then 30 min in H₂ at 1450° C., according to one set of …
FIG. 5
FIG. 5A is a scanning electron microscopy (SEM) image of surface morphology of a sample grown with growth conditions from
FIG. 6
FIG. 6 is a high resolution transmission electron micros- copy (HRTEM) image (top) showing pseudo graphene (see, e.g., bottom reference figure) after SiC film …
FIG. 7
FIG. 7B is an EBSD image of a sample grown at 1620° C. for 20 min in 50 slm Ar over a 4° off-axis substrate, according to one set of embodiments;
FIG. 8
FIG. 8A is an X-ray Diffraction (XRD) rocking curve of the (002) and (004) for SiC grown over a 4° off-axis substrate, according to one set of embodiments;
FIG. 9
FIG. 9 is transmission electron microscopy (TEM) images (left and right), and an SEM image (center) corresponding to
FIG. 10
FIG. 10B is an SEM image (“sub”, top) of a substrate after exfoliation and an SEM image (“tape”, bottom) of an exfoliated SiC film grown by remote epitaxy at …
FIG. 11
FIG. 11B. Removed layer 120 may then be disposed on a second substrate 130, such as a SiC substrate, as shown in
FIG. 12
FIG. 12F illustrate a method 300 of graphene- based and/or hBN-based layer fabrication and transfer using a stressor layer and tape, according to one set of …
FIG. 25
FIG. 25 5A) of the sample and it was clear that there were grain boundaries across the surface of the grown SiC film. While there were grain boundaries, it was …
Claims
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1 independent · 15 dependent
1
IndependentSiCgraphenehBN
A method, comprising: forming a silicon carbide (SiC) film over a layer com-prising graphene and/or hexagonal boron nitride (hBN) that is over a substrate, wherein the SiC film is single crystalline; wherein at least a portion of the formation of the SiC film occurs in the presence of a gaseous material comprising an inert gas, and wherein, during the forming of the SiC film, the tempera-ture of an environment of the layer comprising the graphene and/or hBN over the substrate is ramped from a first temperature to a second, higher temperature, wherein the first temperature and the second tempera-ture are greater than or equal to 1350° C. and less than or equal to 1800° C.
2
Dependent← claim 1inert gas (Argon, Helium, and/or nitrogen)
The method of claim 1, wherein the inert gas comprises Argon, Helium, and/or nitrogen (N₂).
3
Dependent← claim 1Ar
The method of claim 1, wherein the inert gas comprises Argon.
4
Dependent← claim 1SiC
The method of claim 1, further comprising separating the SiC film and the substrate.
6
Dependent← claim 1SiC
The method of claim 1, wherein forming the SiC film over the layer comprises using the substrate as a seed for the SiC film.
7
Dependent← claim 1SiC
The method of claim 1, wherein a surface of the substrate over which the layer is positioned during growth is a SiC surface.
8
Dependent← claim 1
The method of claim 1, wherein the substrate is a semiconductor substrate.
9
Dependent← claim 1SiC
The method of claim 1, wherein the substrate is made, in whole or in part, of SiC having an offcut angle of between or equal to 0° and 10°.
10
Dependent← claim 14H-SiC6H-SiC
The method of claim 1, wherein the substrate is made, in whole or in part, of (0001) 4H—SiC and/or (0001) 6H—SiC.
11
Dependent← claim 1
The method of claim 1, wherein the environment of the layer comprising the graphene and/or hBN over the substrate further comprises the gaseous material comprising the inert gas, wherein a flow rate of the gaseous material is between or equal to 10 standard liters per minute (slm) and 80 slm.
12
Dependent← claim 1III-Nitride substrate
The method of claim 1, wherein the substrate is made, in whole or in part, of a III-Nitride.
13
Dependent← claim 1
The method of claim 1, wherein the second tempera-ture is greater than or equal to 1620° C. and less than or equal to 1800° C.
14
Dependent← claim 1graphenehBN
The method of claim 1, further comprising forming the layer over the substrate.
16
Dependent← claim 1graphenehBN
The method of claim 1, wherein the layer is single crystalline. ∗ ∗ ∗ ∗ ∗
Device structures
Layer stacks claimed or described, ordered top of device to substrate.
SiC film on graphene/hBN release layer on substrate
SiCgrown film
graphenerelease layer
substratesubstrate
Materials
Materials described outside the worked examples.
silicon carbide film
SiC
Grown Film
graphene
Release Layer
Process steps
Additional fabrication and treatment steps described in the patent.
1
Epitaxial Growth
Step 1
Temperature
1350, 1800°C
Ambient
inert gas
Process details
Characterization
Measurements and analyses referenced in the patent, with their drawing references.
sem
SEM
FIG. 5A is a scanning electron microscopy (SEM) image of surface morphology of a sample grown with growth conditions from
SYSTEMS AND METHODS FOR GROWTH OF SILICON CARBIDE OVER A LAYER COMPRISING GRAPHENE AND/OR HEXAGONAL BORON NITRIDE AND RELATED ARTICLES
Rachael L. Myers-Ward, Jeehwan Kim, Kuan Qiao, Wei Kong et al.
Massachusetts Institute of Technology, Cambridge, MA (US), The Government of the United States of America, as Represented by the Secretary of the Navy, Arlington, VA (US), ROHM Co., Ltd., Kyoto (JP)·Nov. 11, 2025·US
Drawings
Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1
FIG. 1A is a schematic illustration of an exemplary article 1000 comprising a substrate 106 and a layer 104 comprising graphene and/or hexagonal boron nitride …
FIG. 2
FIG. 2A is a Nomarski micrograph of a SiC film grown on what was originally (graphene layer)/SiC, with a ramping to growth temperature conducted in hydrogen …
FIG. 3
FIG. 3A is a Nomarski micrograph of a SiC film grown by remote epitaxy over an on-axis SiC substrate, with a gra- phene layer in between the substrate and the …
FIG. 4
FIG. 4A is a Nomarski micrograph of a sample ramped in Argon (Ar) and grown in Ar for 10 min and then 30 min in H₂ at 1450° C., according to one set of …
FIG. 5
FIG. 5A is a scanning electron microscopy (SEM) image of surface morphology of a sample grown with growth conditions from
FIG. 6
FIG. 6 is a high resolution transmission electron micros- copy (HRTEM) image (top) showing pseudo graphene (see, e.g., bottom reference figure) after SiC film …
FIG. 7
FIG. 7B is an EBSD image of a sample grown at 1620° C. for 20 min in 50 slm Ar over a 4° off-axis substrate, according to one set of embodiments;
FIG. 8
FIG. 8A is an X-ray Diffraction (XRD) rocking curve of the (002) and (004) for SiC grown over a 4° off-axis substrate, according to one set of embodiments;
FIG. 9
FIG. 9 is transmission electron microscopy (TEM) images (left and right), and an SEM image (center) corresponding to
FIG. 10
FIG. 10B is an SEM image (“sub”, top) of a substrate after exfoliation and an SEM image (“tape”, bottom) of an exfoliated SiC film grown by remote epitaxy at …
FIG. 11
FIG. 11B. Removed layer 120 may then be disposed on a second substrate 130, such as a SiC substrate, as shown in
FIG. 12
FIG. 12F illustrate a method 300 of graphene- based and/or hBN-based layer fabrication and transfer using a stressor layer and tape, according to one set of …
FIG. 25
FIG. 25 5A) of the sample and it was clear that there were grain boundaries across the surface of the grown SiC film. While there were grain boundaries, it was …
Claims
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1 independent · 15 dependent
1
IndependentSiCgraphenehBN
A method, comprising: forming a silicon carbide (SiC) film over a layer com-prising graphene and/or hexagonal boron nitride (hBN) that is over a substrate, wherein the SiC film is single crystalline; wherein at least a portion of the formation of the SiC film occurs in the presence of a gaseous material comprising an inert gas, and wherein, during the forming of the SiC film, the tempera-ture of an environment of the layer comprising the graphene and/or hBN over the substrate is ramped from a first temperature to a second, higher temperature, wherein the first temperature and the second tempera-ture are greater than or equal to 1350° C. and less than or equal to 1800° C.
2
Dependent← claim 1inert gas (Argon, Helium, and/or nitrogen)
The method of claim 1, wherein the inert gas comprises Argon, Helium, and/or nitrogen (N₂).
3
Dependent← claim 1Ar
The method of claim 1, wherein the inert gas comprises Argon.
4
Dependent← claim 1SiC
The method of claim 1, further comprising separating the SiC film and the substrate.
6
Dependent← claim 1SiC
The method of claim 1, wherein forming the SiC film over the layer comprises using the substrate as a seed for the SiC film.
7
Dependent← claim 1SiC
The method of claim 1, wherein a surface of the substrate over which the layer is positioned during growth is a SiC surface.
8
Dependent← claim 1
The method of claim 1, wherein the substrate is a semiconductor substrate.
9
Dependent← claim 1SiC
The method of claim 1, wherein the substrate is made, in whole or in part, of SiC having an offcut angle of between or equal to 0° and 10°.
10
Dependent← claim 14H-SiC6H-SiC
The method of claim 1, wherein the substrate is made, in whole or in part, of (0001) 4H—SiC and/or (0001) 6H—SiC.
11
Dependent← claim 1
The method of claim 1, wherein the environment of the layer comprising the graphene and/or hBN over the substrate further comprises the gaseous material comprising the inert gas, wherein a flow rate of the gaseous material is between or equal to 10 standard liters per minute (slm) and 80 slm.
12
Dependent← claim 1III-Nitride substrate
The method of claim 1, wherein the substrate is made, in whole or in part, of a III-Nitride.
13
Dependent← claim 1
The method of claim 1, wherein the second tempera-ture is greater than or equal to 1620° C. and less than or equal to 1800° C.
14
Dependent← claim 1graphenehBN
The method of claim 1, further comprising forming the layer over the substrate.
16
Dependent← claim 1graphenehBN
The method of claim 1, wherein the layer is single crystalline. ∗ ∗ ∗ ∗ ∗
Device structures
Layer stacks claimed or described, ordered top of device to substrate.
SiC film on graphene/hBN release layer on substrate
SiCgrown film
graphenerelease layer
substratesubstrate
Materials
Materials described outside the worked examples.
silicon carbide film
SiC
Grown Film
graphene
Release Layer
Process steps
Additional fabrication and treatment steps described in the patent.
1
Epitaxial Growth
Step 1
Temperature
1350, 1800°C
Ambient
inert gas
Process details
Characterization
Measurements and analyses referenced in the patent, with their drawing references.
sem
SEM
FIG. 5A is a scanning electron microscopy (SEM) image of surface morphology of a sample grown with growth conditions from
SiC film formed over graphene and/or hBN layer over substrate; temperature ramped from first temperature to second, higher temperature both in range ≥1350°C and ≤1800°C; formation occurs in presence of inert gas
flow rate slm:10–80 (claim 11)
temperature c max:1800
temperature c min:1350
temperature range c:1350–1800
temperature c upper bound:1800
second temperature range c:1620–1800 (claim 13)
Materials:SiCgraphenehBN
Hrtem
FIG. 6 is a high resolution transmission electron micros- copy (HRTEM) image (top) showing pseudo graphene (see, e.g., bottom reference figure) after SiC film …
FIG. 8A is an X-ray Diffraction (XRD) rocking curve of the (002) and (004) for SiC grown over a 4° off-axis substrate, according to one set of embodiments;
FIG. 10B is an SEM image (“sub”, top) of a substrate after exfoliation and an SEM image (“tape”, bottom) of an exfoliated SiC film grown by remote epitaxy at …
FIG. 12F illustrate a method 300 of graphene- based and/or hBN-based layer fabrication and transfer using a stressor layer and tape, according to one set of …
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characterization XRDcharacterization TEMcharacterization SEMcharacterization FET transport
SiC film formed over graphene and/or hBN layer over substrate; temperature ramped from first temperature to second, higher temperature both in range ≥1350°C and ≤1800°C; formation occurs in presence of inert gas
flow rate slm:10–80 (claim 11)
temperature c max:1800
temperature c min:1350
temperature range c:1350–1800
temperature c upper bound:1800
second temperature range c:1620–1800 (claim 13)
Materials:SiCgraphenehBN
Hrtem
FIG. 6 is a high resolution transmission electron micros- copy (HRTEM) image (top) showing pseudo graphene (see, e.g., bottom reference figure) after SiC film …
FIG. 8A is an X-ray Diffraction (XRD) rocking curve of the (002) and (004) for SiC grown over a 4° off-axis substrate, according to one set of embodiments;
FIG. 10B is an SEM image (“sub”, top) of a substrate after exfoliation and an SEM image (“tape”, bottom) of an exfoliated SiC film grown by remote epitaxy at …
FIG. 12F illustrate a method 300 of graphene- based and/or hBN-based layer fabrication and transfer using a stressor layer and tape, according to one set of …
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Distler et al., Oriented crystallization of AgCl on amorphous polyvinyl chloride replicas of NaCl single crystal surfaces. Thin Solid Films. 1970;6:203-11.
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Fan et al., Flexible Thin-Film InGaAs Photodiode Focal Plane Array. ACS Photonics. Mar. 16, 2016;3(4):670-6.
Fabbri et al., Effects of single-layer Shockley stacking faults on the transport properties of high-purity semi-insulating 4H—SiC. J Appl Phys. 2010;108:013702. Epub Jul. 2, 2010. 4 pages.
Freund et al., Thin film materials: Stress, defect formation and surface evolution. Cambridge Univ Press. 2009. 820 pages.
Fuchs et al., Engineering near-infrared single-photon emitters with optically active spins in ultrapure silicon carbide. Nat Comm. Jul. 7, 2015;6:7578, 7 pages.
Greaving, Fabrication and characterization of diamond thin films as nanocarbon transistor substrates. Master’s Thesis. Vanderbilt Uni- versity. 48 pages. Aug. 2013.
Henning, Orientation of vacuum condensed overgrowths through amorphous layers. Nature. Sep. 12, 1970;227:1129-31.
Iida et al., Laser lift-off technique for freestanding GaN substrate using an In droplet formed by thermal decomposition of GaInN and its application to light-emitting diodes. Appl Phys Lett. 2014;105:072101(1-4). Epub Aug. 18, 2014.
Kayes et al., Flexible thin-film tandem solar cells with >30% efficiency. IEEE J Photovolt. Mar. 2014;4(2):729-33.
Kim et al., Engineering of contact resistance between transparent single-walled carbon nanotube films and a-Si:H single junction solar cells by gold nanodots.Adv Mater.Apr. 10, 2012;24(14):1899- 902. doi: 10.1002/adma.201104677. Epub Mar. 5, 2012.10.1002/adma.201104677
Kim et al., 9.4% efficient amorphous silicon solar cell on high aspect-ratio glass microcones. Adv Mater. Jun. 2014;26(24):4082-6. Epub Mar. 20, 2014.
Kim et al., High efficiency Cu2ZnSn(S,Se)4 solar cells by applying a double In2S3/CdS emitter. Adv Mater. Nov. 2014;26(44):7427-31. Epub Aug. 25, 2014.
Kim et al., Fabrication of dislocation-free tensile strained Si thin films using controllably oxidized porous Si substrates. Appl Phys Lett. 2006;89(15):152117(1-3). Epub Oct. 12, 2006.
Kim et al., A method for fabricating dislocation-free tensile-strained SiGe films via the oxidation of porous Si substrates. Appl Phys Lett. 2007;91(25):252108(1-3). Epub Dec. 19, 2007.
Kim et al., 10.5% efficient polymer and amorphous silicon hybrid tandem photovoltaic cell. Nat Commun. 2015;6:6391(1-6). doi: 10.1038/ncomms7391. 6 pages. Epub Mar. 4, 2015.10.1038/ncomms7391
Kim et al., Principle of direct van der Waals epitaxy of single- crystalline films on epitaxial graphene. Nat Commun. Sep. 2014;5:4836. doi:10.1038/ncomms5836, 7 pages.10.1038/ncomms5836
Kim et al., Layer-resolved graphene transfer via engineered strain layers. Science. Nov. 15, 2013;342(6160):833-6.
Kim et al., Remote epitaxy through graphene enables two- dimensional material-based layer transfer. Nature. Apr. 20, 2017;544(7650):340-3. doi: 10.1038/nature22053. Methods included. 12 pages total.10.1038/nature22053
Kong et al., Polarity governs atomic interaction through two- dimensional materials. Nat Mater. Nov. 2018;17:999-1005.
Lee et al., Natural substrate lift-off technique for vertical light- emitting diodes. Appl Phys Exp. 2014;7(4):042103(1-4). Epub Mar. 14, 2014.
Lee et al., Reuse of GaAs substrates for epitaxial lift-off by employing protection layers. J Appl Phys. 2012;111(3):033527(1- 6). Epub Feb. 15, 2012.
Lee et al., Wafer-scale growth of single-crystal monolayer graphene on reusable hydrogen-terminated germanium. Science. Apr. 18, 2014;344(6181):286-9.
Lin et al., Direct synthesis of van der Waals solids. ACS Nano. Apr. 22, 2014;8(4):3715-23. doi: 10.1021/nn5003858. Epub Mar. 18, 2014.10.1021/nn5003858
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Nakamura et al., GaN growth using GaN buffer layer. Jap J Appl Phys. Oct. 1991;30(10A):L1705-7.
Nicoara et al. Growth of ordered molecular layers of PTCDA on Pb/Si(111) surfaces: a scanning tunneling microscopy study. Nano- technology. Sep. 9, 2016;27(36):365706. 13 pages. doi: 10.1088/0957-4484/27/36/365706. Epub Aug. 2, 2016.10.1088/0957-4484/27/36/365706
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characterization XRDcharacterization TEMcharacterization SEMcharacterization FET transport
SiC film formed over graphene and/or hBN layer over substrate; temperature ramped from first temperature to second, higher temperature both in range ≥1350°C and ≤1800°C; formation occurs in presence of inert gas
flow rate slm:10–80 (claim 11)
temperature c max:1800
temperature c min:1350
temperature range c:1350–1800
temperature c upper bound:1800
second temperature range c:1620–1800 (claim 13)
Materials:SiCgraphenehBN
Hrtem
FIG. 6 is a high resolution transmission electron micros- copy (HRTEM) image (top) showing pseudo graphene (see, e.g., bottom reference figure) after SiC film …
FIG. 8A is an X-ray Diffraction (XRD) rocking curve of the (002) and (004) for SiC grown over a 4° off-axis substrate, according to one set of embodiments;
FIG. 10B is an SEM image (“sub”, top) of a substrate after exfoliation and an SEM image (“tape”, bottom) of an exfoliated SiC film grown by remote epitaxy at …
FIG. 12F illustrate a method 300 of graphene- based and/or hBN-based layer fabrication and transfer using a stressor layer and tape, according to one set of …
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Kim et al., High efficiency Cu2ZnSn(S,Se)4 solar cells by applying a double In2S3/CdS emitter. Adv Mater. Nov. 2014;26(44):7427-31. Epub Aug. 25, 2014.
Kim et al., Fabrication of dislocation-free tensile strained Si thin films using controllably oxidized porous Si substrates. Appl Phys Lett. 2006;89(15):152117(1-3). Epub Oct. 12, 2006.
Kim et al., A method for fabricating dislocation-free tensile-strained SiGe films via the oxidation of porous Si substrates. Appl Phys Lett. 2007;91(25):252108(1-3). Epub Dec. 19, 2007.
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Loher et al., Van der Waals epitaxy of three-dimensional CdS on the two-dimensional layered substrate MoTe2(0001). Appl Phys Lett. Aug. 1, 1994;65(5):555-7.
Nakamura et al., GaN growth using GaN buffer layer. Jap J Appl Phys. Oct. 1991;30(10A):L1705-7.
Nicoara et al. Growth of ordered molecular layers of PTCDA on Pb/Si(111) surfaces: a scanning tunneling microscopy study. Nano- technology. Sep. 9, 2016;27(36):365706. 13 pages. doi: 10.1088/0957-4484/27/36/365706. Epub Aug. 2, 2016.10.1088/0957-4484/27/36/365706
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Nyakiti et al., Enabling graphene-based technologies: Toward wafer- scale production of epitaxial graphene. MRS Bulletin. Nov. 23, 2012; 37:1149-57.
Schlaf et al., Molecular beam epitaxy growth of thin films of SnS2 and SnSe2 on cleaved mica and the basal planes of single-crystal layered semiconductors: Reflection high-energy electron diffrac- tion, low-energy electron diffraction, photoemission, and scanning
tunneling microscopy/atomic force microscopy characterization. J Vac Sci Technol A. May/Jun. 1995;13(3):1761-7.
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Thouless et al., The edge cracking and spalling of brittle plates. Acta Metall. 1987;35(6):1333-41.
Ueda et al., Separation of thin GaN from sapphire by laser lift-off technique. Jap J Appl Phys. 2011;50(4R):041001(1-6). Epub Apr. 20, 2011.
Ueno et al., Epitaxial growth of transition metal dichalcogenides on cleaved faces of mica. J Vac Sci Technol A. Jan./Feb. 1990;8(1):68- 72.
Vishwanath et al., Controllable growth of layered selenide and telluride heterostructures and superlattices using molecular beam epitaxy. J Mater Res. Apr. 14, 2016;31(7):900-10.
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Yablonovitch et al., Extreme selectivity in the lift-off of epitaxial GaAs films. Appl Phys Lett. Dec. 28, 1987;51(26):2222-4. Office Action for CN Application No. 201680059078.8 dated Aug. 3, 2022. Office Action for CN Application No. 201680059078.8 dated May 31, 2023. Office Action for CN Application No. 201680059078.8 dated Mar. 8, 2024. Office Action for CN Application No. 201680059078.8 dated Jun. 26, 2024. Extended European Search Report for EPApplication No. 16845018.7 dated Aug. 23, 2019. Office Action for EP Application No. 16845018.7 dated Dec. 7, 2021. Office Action for EP Application No. 22179687.3 dated Oct. 17, 2022. Extended European Search Report for EPApplication No. 22179687.3 dated May 23, 2023. Office Action for JP Application No. 2018-512205 dated Dec. 7, 2020. Notice of Allowance for JPApplication No. 2018-512205 dated Jul. 5, 2021. Office Action for KR Application No. 10-2018-7010014 dated Feb. 21, 2024. Notice of Allowance for KR Application No. 10-2018-7010014 dated Feb. 13, 2025. Office Action for JP Application No. 2020-571551 dated Jan. 24, 2025. Invitation to Pay Additional Fees for International Application No. PCT/US2016/050701 dated Oct. 19, 2016. International Search Report and Written Opinion for International Application No. PCT/US2016/050701 dated Jan. 19, 2017. International Preliminary Report on Patentability (Chapter 1) for International Application No. PCT/US2016/050701 dated Mar. 22, 2018.
characterization XRDcharacterization TEMcharacterization SEMcharacterization FET transport
SiC film formed over graphene and/or hBN layer over substrate; temperature ramped from first temperature to second, higher temperature both in range ≥1350°C and ≤1800°C; formation occurs in presence of inert gas
flow rate slm:10–80 (claim 11)
temperature c max:1800
temperature c min:1350
temperature range c:1350–1800
temperature c upper bound:1800
second temperature range c:1620–1800 (claim 13)
Materials:SiCgraphenehBN
Hrtem
FIG. 6 is a high resolution transmission electron micros- copy (HRTEM) image (top) showing pseudo graphene (see, e.g., bottom reference figure) after SiC film …
FIG. 8A is an X-ray Diffraction (XRD) rocking curve of the (002) and (004) for SiC grown over a 4° off-axis substrate, according to one set of embodiments;
FIG. 10B is an SEM image (“sub”, top) of a substrate after exfoliation and an SEM image (“tape”, bottom) of an exfoliated SiC film grown by remote epitaxy at …
FIG. 12F illustrate a method 300 of graphene- based and/or hBN-based layer fabrication and transfer using a stressor layer and tape, according to one set of …
US 9,988,313 B29,988,313 B2 * 6/2018 Miranzo................ B82Y 30/00examiner
US 9,991,113 B29,991,113 B2 6/2018 Kim et al.
US 10,176,991 B110,176,991 B1 1/2019 Lagally et al.
US 10,517,155 B210,517,155 B2 12/2019 Lee et al.
US 10,770,289 B210,770,289 B2 9/2020 Kim
US 10,903,073 B210,903,073 B2 1/2021 Kim et al.
US 11,063,073 B211,063,073 B2 7/2021 Lee et al.
US 2003/0052080 A12003/0052080 A1 3/2003 Baik et al.
US 2005/0023646 A12005/0023646 A1 2/2005 Lee et al.
US 2005/0109918 A12005/0109918 A1 5/2005 Nikzad et al.
US 2006/0021565 A12006/0021565 A1 2/2006 Zahler et al.
US 2007/0187694 A12007/0187694 A1 8/2007 Pfeiffer
US 2008/0072817 A12008/0072817 A1 * 3/2008 Zwieback............... C30B 23/00examiner
US 2009/0045395 A12009/0045395 A1 2/2009 Kim et al.
US 2009/0162549 A12009/0162549 A1 6/2009 Fryda et al.
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characterization XRDcharacterization TEMcharacterization SEMcharacterization FET transport
