Patent
US 9,988,313PROCESS FOR PRODUCTION OF GRAPHENE/SILICON CARBIDE CERAMIC COMPOSITES
Pilar Miranzo
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,988,313Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1(B) shows transmission electron micrograph corresponding to a -SiC materials sintered by SPS at 1800 ± °C for 5 mi n, in 4 Pa vacuum, and applying a …
FIG. 2(C) shows Raman spectra at specific positions within the maps of a -SiC materials sintered by SPS at 1800 ± °C for 5 mi n, in 4 Pa vacuum, and applying a …
FIG. 3(C)) show a clear n-type rectifying behavior associated to the SiC phase (A) and the highly linear conducting graphene covered regions (o). EXAMPLES The …
FIG. 4(B) show, respectively, micro-Raman G and 2D/G maps, and FIG 4(C) shows Ramam spectra at specific positions within the maps of P -SiC materials sintered …
FIG. 5 shows field emission scanning electron micrographs of a fracture surface view corresponding to j -SiC material sintered by SPS at 1800 0 C for 5 m in, in …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
: A method for manufacturing in situ graphene containing silicon carbide matrix ceramic composites, the method comprising: a) mixing a ceramic powder composition consisting of ee lpr-ii silicon carbide and at least one sintering additive; b) densifying the ceramic powder composition by electric current activated/assisted sintering (ECAS), resulting in graphene growth from thermal decomposition of silicon carbide within a ceramic material from the ceramic powder composition.
: The method according to claim 1, wherein said silicon carbide is a silicon carbide powder comprising one or more types of silicon carbide selected from the group consisting of alpha-phase silicon carbide and beta-phase silicon carbide.
: The method according to claim 1, wherein said at least one sintering additive comprises at least one member of the group consisting of metallic oxides and mixtures of metallic oxides and non-metallic oxides.
: The method according to claim 1, wherein said sintering additive comprises aluminium oxide powder and yttrium oxide powder, and wherein the sintering additive constitutes more than 0 % and up to 21 % of said ceramic powder composition by weight.
: The method according to claim 1, wherein said graphene comprises at least one of monolayer, 2 to 20 layer, and multilayer graphene, or combinations thereof.
: The method according to claim 1, wherein said electric current activated/assisted sintering (ECAS) technique is selected from the group consisting of resistance sintering (RS), electric discharge sintering (EDS), spark plasma sintering (SPS), field activated sintering technique (FAST), pulsed electric current sintering (PECS), pulse discharge sintering (PDS), plasma activated sintering (PAS), and pulse current sintering (PCS).
: The method according to claim 1, wherein said densification of the ceramic powder composition and graphene growth are effected through application of a vacuum atmosphere between 10 Pa and 0.1 Pa.
: The method according to claim 1, wherein said densification of the ceramic powder composition and graphene growth are effected under uniaxial pressure between 20 MPa and 100 MPa.
: The method according to claim 1, wherein said densification of the ceramic powder composition and graphene growth are conducted at maximum temperatures between 1600 C and 2000 °C.
: The method according to claim 1, wherein densification of the ceramic powder composition and graphene growth are conducted at a holding time of between 0 and 30 minutes at a maximum temperature.
: The method according to claim 1, wherein the densification of the ceramic powder composition and graphene growth includes application of heating rate ramps as a function of a maximum temperature, Tmax, selected from the group consisting of a) 133 0C- min up to 1400 ° C; b) from 1400 0 C to Tmax-75 0 C at 75 oC- min ~l; c) from Tmax-75 0 C to Tmax-25 0 C at 50 C- min l; and d) from Tmax-25 0 C to Tmax at 25 oC- min ~.
: A graphene-like conducting network comprising graphene flakes and silicon carbide grains manufactured according to the method of claim 1, wherein the graphene flakes are epitaxially bonded to carbon terminated faces and silicon terminated faces of the silicon carbide grains. withdrawn
. canceled
: A graphene-like conducting network comprising graphene flakes and silicon carbide grains, wherein the graphene flakes are epitaxially bonded to carbon terminated faces and silicon terminated faces of the silicon carbide grains. withdrawn
: The graphene-like conducting network of claim 16, said network having an electrical conductivity value greater than zero and as high as 935 S m-1. withdrawn
: The graphene-like conducting network of claim 16, said network having a fracture toughness greater than zero and as high as 4.5 MPa -m2. withdrawn
Embodiments described in the patent, grouped by the materials and process steps they use.
2 materials1 process step
Alpha-SiC materials sintered by SPS at 1800°C for 5 min, in 4 Pa vacuum, applying a uniaxial pressure of 50 MPa. TEM and Raman characterization showed in situ graphene growth (monolayer through 5-layer graphene observed). Conductive scanning force microscopy confirmed percolated graphene network.
2 materials1 process step
Beta-SiC materials sintered by SPS at 1800°C for 5 min, in 4 Pa vacuum, applying a uniaxial pressure of 50 MPa. Raman mapping (G and 2D/G maps) confirmed in situ graphene growth.
Layer stacks claimed or described, ordered top of device to substrate.
graphene-like conducting network in SiC ceramic composite
Materials described outside the worked examples.
sintering additive
aluminum oxide
Al₂O₃
Measurements and analyses referenced in the patent, with their drawing references.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Electrical Conductivity | 935 S/m | SiCC |
Flexural Strength |
Related documents with shared materials, methods, properties, or citations.
METHOD FOR PRODUCING A GRAPHENE SHEET ON A PLATINUM SILICIDE, STRUCTURES OBTAINED USING SAID METHOD AND USES THEREOF
RF Low Noise Amplifiers and Power Amplifiers using Tunnelling Barrier modulated Superconductor-Semiconductor-Superconductor Junctions
Patent
Atlas literature
Patent
US 9,988,313Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1(B) shows transmission electron micrograph corresponding to a -SiC materials sintered by SPS at 1800 ± °C for 5 mi n, in 4 Pa vacuum, and applying a …
FIG. 2(C) shows Raman spectra at specific positions within the maps of a -SiC materials sintered by SPS at 1800 ± °C for 5 mi n, in 4 Pa vacuum, and applying a …
FIG. 3(C)) show a clear n-type rectifying behavior associated to the SiC phase (A) and the highly linear conducting graphene covered regions (o). EXAMPLES The …
FIG. 4(B) show, respectively, micro-Raman G and 2D/G maps, and FIG 4(C) shows Ramam spectra at specific positions within the maps of P -SiC materials sintered …
FIG. 5 shows field emission scanning electron micrographs of a fracture surface view corresponding to j -SiC material sintered by SPS at 1800 0 C for 5 m in, in …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
: A method for manufacturing in situ graphene containing silicon carbide matrix ceramic composites, the method comprising: a) mixing a ceramic powder composition consisting of ee lpr-ii silicon carbide and at least one sintering additive; b) densifying the ceramic powder composition by electric current activated/assisted sintering (ECAS), resulting in graphene growth from thermal decomposition of silicon carbide within a ceramic material from the ceramic powder composition.
: The method according to claim 1, wherein said silicon carbide is a silicon carbide powder comprising one or more types of silicon carbide selected from the group consisting of alpha-phase silicon carbide and beta-phase silicon carbide.
: The method according to claim 1, wherein said at least one sintering additive comprises at least one member of the group consisting of metallic oxides and mixtures of metallic oxides and non-metallic oxides.
: The method according to claim 1, wherein said sintering additive comprises aluminium oxide powder and yttrium oxide powder, and wherein the sintering additive constitutes more than 0 % and up to 21 % of said ceramic powder composition by weight.
: The method according to claim 1, wherein said graphene comprises at least one of monolayer, 2 to 20 layer, and multilayer graphene, or combinations thereof.
: The method according to claim 1, wherein said electric current activated/assisted sintering (ECAS) technique is selected from the group consisting of resistance sintering (RS), electric discharge sintering (EDS), spark plasma sintering (SPS), field activated sintering technique (FAST), pulsed electric current sintering (PECS), pulse discharge sintering (PDS), plasma activated sintering (PAS), and pulse current sintering (PCS).
: The method according to claim 1, wherein said densification of the ceramic powder composition and graphene growth are effected through application of a vacuum atmosphere between 10 Pa and 0.1 Pa.
: The method according to claim 1, wherein said densification of the ceramic powder composition and graphene growth are effected under uniaxial pressure between 20 MPa and 100 MPa.
: The method according to claim 1, wherein said densification of the ceramic powder composition and graphene growth are conducted at maximum temperatures between 1600 C and 2000 °C.
: The method according to claim 1, wherein densification of the ceramic powder composition and graphene growth are conducted at a holding time of between 0 and 30 minutes at a maximum temperature.
: The method according to claim 1, wherein the densification of the ceramic powder composition and graphene growth includes application of heating rate ramps as a function of a maximum temperature, Tmax, selected from the group consisting of a) 133 0C- min up to 1400 ° C; b) from 1400 0 C to Tmax-75 0 C at 75 oC- min ~l; c) from Tmax-75 0 C to Tmax-25 0 C at 50 C- min l; and d) from Tmax-25 0 C to Tmax at 25 oC- min ~.
: A graphene-like conducting network comprising graphene flakes and silicon carbide grains manufactured according to the method of claim 1, wherein the graphene flakes are epitaxially bonded to carbon terminated faces and silicon terminated faces of the silicon carbide grains. withdrawn
. canceled
: A graphene-like conducting network comprising graphene flakes and silicon carbide grains, wherein the graphene flakes are epitaxially bonded to carbon terminated faces and silicon terminated faces of the silicon carbide grains. withdrawn
: The graphene-like conducting network of claim 16, said network having an electrical conductivity value greater than zero and as high as 935 S m-1. withdrawn
: The graphene-like conducting network of claim 16, said network having a fracture toughness greater than zero and as high as 4.5 MPa -m2. withdrawn
Embodiments described in the patent, grouped by the materials and process steps they use.
2 materials1 process step
Alpha-SiC materials sintered by SPS at 1800°C for 5 min, in 4 Pa vacuum, applying a uniaxial pressure of 50 MPa. TEM and Raman characterization showed in situ graphene growth (monolayer through 5-layer graphene observed). Conductive scanning force microscopy confirmed percolated graphene network.
2 materials1 process step
Beta-SiC materials sintered by SPS at 1800°C for 5 min, in 4 Pa vacuum, applying a uniaxial pressure of 50 MPa. Raman mapping (G and 2D/G maps) confirmed in situ graphene growth.
Layer stacks claimed or described, ordered top of device to substrate.
graphene-like conducting network in SiC ceramic composite
Materials described outside the worked examples.
sintering additive
aluminum oxide
Al₂O₃
Measurements and analyses referenced in the patent, with their drawing references.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Electrical Conductivity | 935 S/m | SiCC |
Flexural Strength |
Related documents with shared materials, methods, properties, or citations.
METHOD FOR PRODUCING A GRAPHENE SHEET ON A PLATINUM SILICIDE, STRUCTURES OBTAINED USING SAID METHOD AND USES THEREOF
RF Low Noise Amplifiers and Power Amplifiers using Tunnelling Barrier modulated Superconductor-Semiconductor-Superconductor Junctions
Patent
Atlas literature
Patent
US 9,988,313Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1(B) shows transmission electron micrograph corresponding to a -SiC materials sintered by SPS at 1800 ± °C for 5 mi n, in 4 Pa vacuum, and applying a …
FIG. 2(C) shows Raman spectra at specific positions within the maps of a -SiC materials sintered by SPS at 1800 ± °C for 5 mi n, in 4 Pa vacuum, and applying a …
FIG. 3(C)) show a clear n-type rectifying behavior associated to the SiC phase (A) and the highly linear conducting graphene covered regions (o). EXAMPLES The …
FIG. 4(B) show, respectively, micro-Raman G and 2D/G maps, and FIG 4(C) shows Ramam spectra at specific positions within the maps of P -SiC materials sintered …
FIG. 5 shows field emission scanning electron micrographs of a fracture surface view corresponding to j -SiC material sintered by SPS at 1800 0 C for 5 m in, in …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
: A method for manufacturing in situ graphene containing silicon carbide matrix ceramic composites, the method comprising: a) mixing a ceramic powder composition consisting of ee lpr-ii silicon carbide and at least one sintering additive; b) densifying the ceramic powder composition by electric current activated/assisted sintering (ECAS), resulting in graphene growth from thermal decomposition of silicon carbide within a ceramic material from the ceramic powder composition.
: The method according to claim 1, wherein said silicon carbide is a silicon carbide powder comprising one or more types of silicon carbide selected from the group consisting of alpha-phase silicon carbide and beta-phase silicon carbide.
: The method according to claim 1, wherein said at least one sintering additive comprises at least one member of the group consisting of metallic oxides and mixtures of metallic oxides and non-metallic oxides.
: The method according to claim 1, wherein said sintering additive comprises aluminium oxide powder and yttrium oxide powder, and wherein the sintering additive constitutes more than 0 % and up to 21 % of said ceramic powder composition by weight.
: The method according to claim 1, wherein said graphene comprises at least one of monolayer, 2 to 20 layer, and multilayer graphene, or combinations thereof.
: The method according to claim 1, wherein said electric current activated/assisted sintering (ECAS) technique is selected from the group consisting of resistance sintering (RS), electric discharge sintering (EDS), spark plasma sintering (SPS), field activated sintering technique (FAST), pulsed electric current sintering (PECS), pulse discharge sintering (PDS), plasma activated sintering (PAS), and pulse current sintering (PCS).
: The method according to claim 1, wherein said densification of the ceramic powder composition and graphene growth are effected through application of a vacuum atmosphere between 10 Pa and 0.1 Pa.
: The method according to claim 1, wherein said densification of the ceramic powder composition and graphene growth are effected under uniaxial pressure between 20 MPa and 100 MPa.
: The method according to claim 1, wherein said densification of the ceramic powder composition and graphene growth are conducted at maximum temperatures between 1600 C and 2000 °C.
: The method according to claim 1, wherein densification of the ceramic powder composition and graphene growth are conducted at a holding time of between 0 and 30 minutes at a maximum temperature.
: The method according to claim 1, wherein the densification of the ceramic powder composition and graphene growth includes application of heating rate ramps as a function of a maximum temperature, Tmax, selected from the group consisting of a) 133 0C- min up to 1400 ° C; b) from 1400 0 C to Tmax-75 0 C at 75 oC- min ~l; c) from Tmax-75 0 C to Tmax-25 0 C at 50 C- min l; and d) from Tmax-25 0 C to Tmax at 25 oC- min ~.
: A graphene-like conducting network comprising graphene flakes and silicon carbide grains manufactured according to the method of claim 1, wherein the graphene flakes are epitaxially bonded to carbon terminated faces and silicon terminated faces of the silicon carbide grains. withdrawn
. canceled
: A graphene-like conducting network comprising graphene flakes and silicon carbide grains, wherein the graphene flakes are epitaxially bonded to carbon terminated faces and silicon terminated faces of the silicon carbide grains. withdrawn
: The graphene-like conducting network of claim 16, said network having an electrical conductivity value greater than zero and as high as 935 S m-1. withdrawn
: The graphene-like conducting network of claim 16, said network having a fracture toughness greater than zero and as high as 4.5 MPa -m2. withdrawn
Embodiments described in the patent, grouped by the materials and process steps they use.
2 materials1 process step
Alpha-SiC materials sintered by SPS at 1800°C for 5 min, in 4 Pa vacuum, applying a uniaxial pressure of 50 MPa. TEM and Raman characterization showed in situ graphene growth (monolayer through 5-layer graphene observed). Conductive scanning force microscopy confirmed percolated graphene network.
2 materials1 process step
Beta-SiC materials sintered by SPS at 1800°C for 5 min, in 4 Pa vacuum, applying a uniaxial pressure of 50 MPa. Raman mapping (G and 2D/G maps) confirmed in situ graphene growth.
Layer stacks claimed or described, ordered top of device to substrate.
graphene-like conducting network in SiC ceramic composite
Materials described outside the worked examples.
sintering additive
aluminum oxide
Al₂O₃
Measurements and analyses referenced in the patent, with their drawing references.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Electrical Conductivity | 935 S/m | SiCC |
Flexural Strength |
Related documents with shared materials, methods, properties, or citations.
METHOD FOR PRODUCING A GRAPHENE SHEET ON A PLATINUM SILICIDE, STRUCTURES OBTAINED USING SAID METHOD AND USES THEREOF
RF Low Noise Amplifiers and Power Amplifiers using Tunnelling Barrier modulated Superconductor-Semiconductor-Superconductor Junctions
Patent
Atlas literature
Patent
US 9,988,313Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1(B) shows transmission electron micrograph corresponding to a -SiC materials sintered by SPS at 1800 ± °C for 5 mi n, in 4 Pa vacuum, and applying a …
FIG. 2(C) shows Raman spectra at specific positions within the maps of a -SiC materials sintered by SPS at 1800 ± °C for 5 mi n, in 4 Pa vacuum, and applying a …
FIG. 3(C)) show a clear n-type rectifying behavior associated to the SiC phase (A) and the highly linear conducting graphene covered regions (o). EXAMPLES The …
FIG. 4(B) show, respectively, micro-Raman G and 2D/G maps, and FIG 4(C) shows Ramam spectra at specific positions within the maps of P -SiC materials sintered …
FIG. 5 shows field emission scanning electron micrographs of a fracture surface view corresponding to j -SiC material sintered by SPS at 1800 0 C for 5 m in, in …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
: A method for manufacturing in situ graphene containing silicon carbide matrix ceramic composites, the method comprising: a) mixing a ceramic powder composition consisting of ee lpr-ii silicon carbide and at least one sintering additive; b) densifying the ceramic powder composition by electric current activated/assisted sintering (ECAS), resulting in graphene growth from thermal decomposition of silicon carbide within a ceramic material from the ceramic powder composition.
: The method according to claim 1, wherein said silicon carbide is a silicon carbide powder comprising one or more types of silicon carbide selected from the group consisting of alpha-phase silicon carbide and beta-phase silicon carbide.
: The method according to claim 1, wherein said at least one sintering additive comprises at least one member of the group consisting of metallic oxides and mixtures of metallic oxides and non-metallic oxides.
: The method according to claim 1, wherein said sintering additive comprises aluminium oxide powder and yttrium oxide powder, and wherein the sintering additive constitutes more than 0 % and up to 21 % of said ceramic powder composition by weight.
: The method according to claim 1, wherein said graphene comprises at least one of monolayer, 2 to 20 layer, and multilayer graphene, or combinations thereof.
: The method according to claim 1, wherein said electric current activated/assisted sintering (ECAS) technique is selected from the group consisting of resistance sintering (RS), electric discharge sintering (EDS), spark plasma sintering (SPS), field activated sintering technique (FAST), pulsed electric current sintering (PECS), pulse discharge sintering (PDS), plasma activated sintering (PAS), and pulse current sintering (PCS).
: The method according to claim 1, wherein said densification of the ceramic powder composition and graphene growth are effected through application of a vacuum atmosphere between 10 Pa and 0.1 Pa.
: The method according to claim 1, wherein said densification of the ceramic powder composition and graphene growth are effected under uniaxial pressure between 20 MPa and 100 MPa.
: The method according to claim 1, wherein said densification of the ceramic powder composition and graphene growth are conducted at maximum temperatures between 1600 C and 2000 °C.
: The method according to claim 1, wherein densification of the ceramic powder composition and graphene growth are conducted at a holding time of between 0 and 30 minutes at a maximum temperature.
: The method according to claim 1, wherein the densification of the ceramic powder composition and graphene growth includes application of heating rate ramps as a function of a maximum temperature, Tmax, selected from the group consisting of a) 133 0C- min up to 1400 ° C; b) from 1400 0 C to Tmax-75 0 C at 75 oC- min ~l; c) from Tmax-75 0 C to Tmax-25 0 C at 50 C- min l; and d) from Tmax-25 0 C to Tmax at 25 oC- min ~.
: A graphene-like conducting network comprising graphene flakes and silicon carbide grains manufactured according to the method of claim 1, wherein the graphene flakes are epitaxially bonded to carbon terminated faces and silicon terminated faces of the silicon carbide grains. withdrawn
. canceled
: A graphene-like conducting network comprising graphene flakes and silicon carbide grains, wherein the graphene flakes are epitaxially bonded to carbon terminated faces and silicon terminated faces of the silicon carbide grains. withdrawn
: The graphene-like conducting network of claim 16, said network having an electrical conductivity value greater than zero and as high as 935 S m-1. withdrawn
: The graphene-like conducting network of claim 16, said network having a fracture toughness greater than zero and as high as 4.5 MPa -m2. withdrawn
Embodiments described in the patent, grouped by the materials and process steps they use.
2 materials1 process step
Alpha-SiC materials sintered by SPS at 1800°C for 5 min, in 4 Pa vacuum, applying a uniaxial pressure of 50 MPa. TEM and Raman characterization showed in situ graphene growth (monolayer through 5-layer graphene observed). Conductive scanning force microscopy confirmed percolated graphene network.
2 materials1 process step
Beta-SiC materials sintered by SPS at 1800°C for 5 min, in 4 Pa vacuum, applying a uniaxial pressure of 50 MPa. Raman mapping (G and 2D/G maps) confirmed in situ graphene growth.
Layer stacks claimed or described, ordered top of device to substrate.
graphene-like conducting network in SiC ceramic composite
Materials described outside the worked examples.
sintering additive
aluminum oxide
Al₂O₃
Measurements and analyses referenced in the patent, with their drawing references.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Electrical Conductivity | 935 S/m | SiCC |
Flexural Strength |
Related documents with shared materials, methods, properties, or citations.
METHOD FOR PRODUCING A GRAPHENE SHEET ON A PLATINUM SILICIDE, STRUCTURES OBTAINED USING SAID METHOD AND USES THEREOF
RF Low Noise Amplifiers and Power Amplifiers using Tunnelling Barrier modulated Superconductor-Semiconductor-Superconductor Junctions
silicon dioxide
SiO₂
aluminum nitrate
Al(NO₃)3
yttrium nitrate
Y(NO₃)3
yttrium oxide
Y₂O₃
lutetium oxide
Lu₂O₃
ytterbium oxide
Yb₂O₃
gadolinium oxide
Gd₂O₃
lanthanum oxide
La₂O₃
| — |
SiCC |
Thickness | 45–55 nm | — |
Pressure | 0.1–10 Pa | — |
Pressure | 20–100 MPa | — |
Duration | 0–30 minutes | — |
Pressure | 1–9 pa | — |
Pressure | 0.1–1 Pa | — |
Pressure | 300–1000 MPa | — |
Pressure | 1–5 Pa | — |
Pressure | 8–10 Pa | — |
silicon dioxide
SiO₂
aluminum nitrate
Al(NO₃)3
yttrium nitrate
Y(NO₃)3
yttrium oxide
Y₂O₃
lutetium oxide
Lu₂O₃
ytterbium oxide
Yb₂O₃
gadolinium oxide
Gd₂O₃
lanthanum oxide
La₂O₃
| — |
SiCC |
Thickness | 45–55 nm | — |
Pressure | 0.1–10 Pa | — |
Pressure | 20–100 MPa | — |
Duration | 0–30 minutes | — |
Pressure | 1–9 pa | — |
Pressure | 0.1–1 Pa | — |
Pressure | 300–1000 MPa | — |
Pressure | 1–5 Pa | — |
Pressure | 8–10 Pa | — |
silicon dioxide
SiO₂
aluminum nitrate
Al(NO₃)3
yttrium nitrate
Y(NO₃)3
yttrium oxide
Y₂O₃
lutetium oxide
Lu₂O₃
ytterbium oxide
Yb₂O₃
gadolinium oxide
Gd₂O₃
lanthanum oxide
La₂O₃
| — |
SiCC |
Thickness | 45–55 nm | — |
Pressure | 0.1–10 Pa | — |
Pressure | 20–100 MPa | — |
Duration | 0–30 minutes | — |
Pressure | 1–9 pa | — |
Pressure | 0.1–1 Pa | — |
Pressure | 300–1000 MPa | — |
Pressure | 1–5 Pa | — |
Pressure | 8–10 Pa | — |
silicon dioxide
SiO₂
aluminum nitrate
Al(NO₃)3
yttrium nitrate
Y(NO₃)3
yttrium oxide
Y₂O₃
lutetium oxide
Lu₂O₃
ytterbium oxide
Yb₂O₃
gadolinium oxide
Gd₂O₃
lanthanum oxide
La₂O₃
| — |
SiCC |
Thickness | 45–55 nm | — |
Pressure | 0.1–10 Pa | — |
Pressure | 20–100 MPa | — |
Duration | 0–30 minutes | — |
Pressure | 1–9 pa | — |
Pressure | 0.1–1 Pa | — |
Pressure | 300–1000 MPa | — |
Pressure | 1–5 Pa | — |
Pressure | 8–10 Pa | — |