METHOD FOR PRODUCING A GRAPHENE SHEET ON A PLATINUM SILICIDE, STRUCTURES OBTAINED USING SAID METHOD AND USES THEREOF

Aziz Zenasni

Patent

Atlas literature

Patent

US 9,159,550

METHOD FOR PRODUCING A GRAPHENE SHEET ON A PLATINUM SILICIDE, STRUCTURES OBTAINED USING SAID METHOD AND USES THEREOF

Aziz Zenasni

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

17 independent · 10 dependent

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Independentdiffusion barrier materialcarbon-containing material free from siliconPtSiaCbHcPtxSigraphene-on-platinum-silicide structure
A method for producing a structure comprising:-a substrate;-a layer C 1 of a diﬀusion barrier material covering the substrate;-a platinum silicide covering the layer C l, the platinum silicide being of formula PtxSi where x is a number greater than or equal to two, and being in a form of a layer or spaced pins; and-a graphene sheet covering the layer or spaced pins of the platinum silicide; the method comprising: a) producing a stack by: i) depositing the layer C 1 on the substrate; ii) depositing, on the layer C l, a layer C₂ of a carbon-containing material free from silicon; iii) depositing, on the layer C2, a layer C₃ of platinum; iv) depositing, on the layer C3, a layer C₄ of a material of formula S iaCbHe wherein a is greater than 0 whereas b and c, which are identical or diﬀerent, are greater than or equal to 0, a ratio of a number of platinum atoms found in the layer C₃ with respect to a number of silicon atoms found in the layer C₄ being greater than or equal to two; and b) heat-treating the stack obtained at a) so as to obtain the structure.
1. 13
  Dependent← claim 12SiO₂
  The method of claim 12, wherein the diﬀusion barrier material is silicon dioxide.
2. 14
  Dependent← claim 12amorphous carbon-containing material free from silicon
  The method of claim 12, wherein the carbon-containing material free from silicon is selected from the group consisting of amorphous carbon-containing materials free from silicon.
3. 16
  Dependent← claim 12a-Si:H
  The method of claim 12, wherein the material having the formula S iaCbHe is hydrogenated amorphous silicon a-Si:H. -2- Application No.: 13/670373 Filing Date:
4. 17
  Dependent← claim 12
  The method of claim 12, wherein the layer C₂ is deposited by plasma- enhanced chemical vapor deposition.
5. 18
  Dependent← claim 12
  The method of claim 12, wherein the layer C₃ is deposited by physical vapor deposition, at a temperature ranging from 20 ± °C to 3 0±° C.
6. 20
  Dependent← claim 12
  The method of claim 12, wherein the heat treatment is carried out at a temperature ranging from 750 ± °C to 85 0 ±°C, in a neutral atmosphere.
7. 21
  Dependent← claim 12
  The method of claim 12, wherein the heat treatment comprises:-a ﬁrst heat treatment carried out at a temperature ranging from 250 ± °C to 350 ± °C, in a neutral atmosphere; and-a second heat treatment carried out at a temperature ranging from 750 ± °C to 850 ± °C, in a neutral atmosphere. 22-26.
8. 27
  Dependent← claim 12
  A method for manufacturing a device selected nanoelectronic, microelectromechanical and implementation of the method of claim 12 during from the group consisting of microelectronic, nanoelectromechanical devices, comprising the production of the device. -3-
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Device structures

Layer stacks claimed or described, ordered top of device to substrate.

graphene-on-platinum-silicide structure

graphene sheetgraphene sheet

PtxSiplatinum silicide (PtxSi, x>=2)

diffusion barrier materialdiffusion barrier

substratesubstrate

Materials

Materials described outside the worked examples.

diffusion barrier material

Diffusion Barrier Layer (C1)

carbon-containing material free from silicon

Carbon Source Layer (C2)

Process steps

Additional fabrication and treatment steps described in the patent.

Thin Film Deposition And Anneal

Step 1

Temperature

750, 850°C

Ambient

neutral atmosphere

Process details

Why these are connected

Related documents with shared materials, methods, properties, or citations.

METHOD FOR PRODUCING A GRAPHENE SHEET ON A PLATINUM SILICIDE, STRUCTURES OBTAINED USING SAID METHOD AND USES THEREOF | Matter42 Literature