Research paper
Computational MDComputed PhononTheoretical| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Substrate Thickness | graphene layer thickness | 3.35angstrom | — | |||
| Substrate Thickness | silicene layer thickness | 4.65angstrom | — | |||
| Buckling Height | silicene buckling | 0.45angstrom | — | |||
| Phonon Conductance Decay Exponent | graphene repulsive LJ regime | 10.0 | — | |||
| Phonon Conductance Decay Exponent | graphene mixed LJ regime | 2.0 | — | |||
| Phonon Conductance Decay Exponent | silicene mixed LJ regime | 2.5 | — | |||
| Phonon Conductance Decay Exponent | attractive LJ regime | 1.3 | — | |||
| Phonon Optical Contribution Gap Threshold | optical phonon contribution becomes non-negligible below this gap | 1.6angstrom | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Substrate Thickness | graphene layer thickness | 3.35angstrom | — | |||
| Substrate Thickness | silicene layer thickness | 4.65angstrom | — | |||
| Buckling Height | silicene buckling | 0.45angstrom | — | |||
| Phonon Conductance Decay Exponent | graphene repulsive LJ regime | 10.0 | — | |||
| Phonon Conductance Decay Exponent | graphene mixed LJ regime | 2.0 | — | |||
| Phonon Conductance Decay Exponent | silicene mixed LJ regime | 2.5 | — | |||
| Phonon Conductance Decay Exponent | attractive LJ regime | 1.3 | — | |||
| Phonon Optical Contribution Gap Threshold | optical phonon contribution becomes non-negligible below this gap | 1.6angstrom | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Substrate Thickness | graphene layer thickness | 3.35angstrom | — | |||
| Substrate Thickness | silicene layer thickness | 4.65angstrom | — | |||
| Buckling Height | silicene buckling | 0.45angstrom | — | |||
| Phonon Conductance Decay Exponent | graphene repulsive LJ regime | 10.0 | — | |||
| Phonon Conductance Decay Exponent | graphene mixed LJ regime | 2.0 | — | |||
| Phonon Conductance Decay Exponent | silicene mixed LJ regime | 2.5 | — | |||
| Phonon Conductance Decay Exponent | attractive LJ regime | 1.3 | — | |||
| Phonon Optical Contribution Gap Threshold | optical phonon contribution becomes non-negligible below this gap | 1.6angstrom | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Substrate Thickness | graphene layer thickness | 3.35angstrom | — | |||
| Substrate Thickness | silicene layer thickness | 4.65angstrom | — | |||
| Buckling Height | silicene buckling | 0.45angstrom | — | |||
| Phonon Conductance Decay Exponent | graphene repulsive LJ regime | 10.0 | — | |||
| Phonon Conductance Decay Exponent | graphene mixed LJ regime | 2.0 | — | |||
| Phonon Conductance Decay Exponent | silicene mixed LJ regime | 2.5 | — | |||
| Phonon Conductance Decay Exponent | attractive LJ regime | 1.3 | — | |||
| Phonon Optical Contribution Gap Threshold | optical phonon contribution becomes non-negligible below this gap | 1.6angstrom | — |