Patent
US 11,121,3343D Graphene Transistor
Sameer Sonkusale, Shideh Abootorabi, Pramod Kumar Singh
TUFTS UNIVERSITY·30 December 2015·US
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Patent
Atlas literature
Patent
US 11,121,334Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates steps in a device fabrication process; 26
FIG. 2 shows a structural model of a foam together with 27 estimated electron pass lengths; WO 2015/200758 PCT/US₂₀₁₅/037897 1
FIG. 3 shows a structrual model of a foam and an estimate 2 of an effective width of a transistor; 3
FIG. 4 (57) Abstract: A field effect transistor having a channel that comprises three-dimensional graphene foam. The subject ma il er of the 0 SVG …
FIG. 5 shows a 25 similar image after the etching step. It is apparent from 26 comparison of these figures that the foam is an interconnected 27 network of …
FIG. 6 shows the Raman spectrum of the three-dimensional 11 graphene after the copper has been etched away. The Raman shift 12 was studied using a Raman …
FIG. 7 shows the electrical measurement results for a 18 single transistor 22. The left-hand plot shows drain current as 19 a function of gate voltage for …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Canceled
The apparatus of claim 4, further comprising an ionic liquid, wherein said ionic liquid bathes said foam. Currently amended
The apparatus of claim 2, wherein said ionic liquid comprises 1-Butyl- 3-methylimidazolium hexafluorophosphate. Original
An apparatus comprising a field- effect transistor havin g a channel that comprises a three-dimensional g raphene foam that comprises an interconnected network of graphene strips, wherein said g raphene strips are made of a form of graphene selected from the group consisting of monola y er graphene and bilayer graphene. Currently amended
The apparatus of claim 4, wherein said strips are made of monolayer graphene. Canceled
The apparatus of claim 4, further comprising a hydrophilic agent on said graphene. Currently amended
The apparatus of claim 4, further comprising a sensor, wherein variation in a property of said transistor forms a basis for a measurement by said sensor. Currently amended
The apparatus of claim 4, wherein said transistor incorporates a scaffold. Currently amended
The apparatus of claim 4, wherein said strips are made of bilayer graphene. New
The apparatus of claim 4, wherein variation in a property of said transistor forms a basis for a measurement of both pH and strain. New
The apparatus of claim 4, wherein said transistor is a multimodal device that measures multiple inputs at the same time. New
The apparatus of claim 4, wherein said field-effect transistor comprises a source terminal and a drain terminal, wherein said channel defines a plane having a top side a bottom side, and a perimeter, and wherein said source and drain terminals connect to said perimeter. New
The apparatus of claim 4, wherein said graphene is suspended above a substrate. New
Layer stacks claimed or described, ordered top of device to substrate.
three-dimensional graphene foam field-effect transistor
Materials described outside the worked examples.
three-dimensional graphene foam
ionic liquid
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3 shows a structrual model of a foam and an estimate 2 of an effective width of a transistor; 3
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
drain_current_strain_sensitivity | 0.374 mA per percentage point of strain | three-dimensional graphene foam |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,121,334Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates steps in a device fabrication process; 26
FIG. 2 shows a structural model of a foam together with 27 estimated electron pass lengths; WO 2015/200758 PCT/US₂₀₁₅/037897 1
FIG. 3 shows a structrual model of a foam and an estimate 2 of an effective width of a transistor; 3
FIG. 4 (57) Abstract: A field effect transistor having a channel that comprises three-dimensional graphene foam. The subject ma il er of the 0 SVG …
FIG. 5 shows a 25 similar image after the etching step. It is apparent from 26 comparison of these figures that the foam is an interconnected 27 network of …
FIG. 6 shows the Raman spectrum of the three-dimensional 11 graphene after the copper has been etched away. The Raman shift 12 was studied using a Raman …
FIG. 7 shows the electrical measurement results for a 18 single transistor 22. The left-hand plot shows drain current as 19 a function of gate voltage for …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Canceled
The apparatus of claim 4, further comprising an ionic liquid, wherein said ionic liquid bathes said foam. Currently amended
The apparatus of claim 2, wherein said ionic liquid comprises 1-Butyl- 3-methylimidazolium hexafluorophosphate. Original
An apparatus comprising a field- effect transistor havin g a channel that comprises a three-dimensional g raphene foam that comprises an interconnected network of graphene strips, wherein said g raphene strips are made of a form of graphene selected from the group consisting of monola y er graphene and bilayer graphene. Currently amended
The apparatus of claim 4, wherein said strips are made of monolayer graphene. Canceled
The apparatus of claim 4, further comprising a hydrophilic agent on said graphene. Currently amended
The apparatus of claim 4, further comprising a sensor, wherein variation in a property of said transistor forms a basis for a measurement by said sensor. Currently amended
The apparatus of claim 4, wherein said transistor incorporates a scaffold. Currently amended
The apparatus of claim 4, wherein said strips are made of bilayer graphene. New
The apparatus of claim 4, wherein variation in a property of said transistor forms a basis for a measurement of both pH and strain. New
The apparatus of claim 4, wherein said transistor is a multimodal device that measures multiple inputs at the same time. New
The apparatus of claim 4, wherein said field-effect transistor comprises a source terminal and a drain terminal, wherein said channel defines a plane having a top side a bottom side, and a perimeter, and wherein said source and drain terminals connect to said perimeter. New
The apparatus of claim 4, wherein said graphene is suspended above a substrate. New
Layer stacks claimed or described, ordered top of device to substrate.
three-dimensional graphene foam field-effect transistor
Materials described outside the worked examples.
three-dimensional graphene foam
ionic liquid
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3 shows a structrual model of a foam and an estimate 2 of an effective width of a transistor; 3
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
drain_current_strain_sensitivity | 0.374 mA per percentage point of strain | three-dimensional graphene foam |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,121,334Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates steps in a device fabrication process; 26
FIG. 2 shows a structural model of a foam together with 27 estimated electron pass lengths; WO 2015/200758 PCT/US₂₀₁₅/037897 1
FIG. 3 shows a structrual model of a foam and an estimate 2 of an effective width of a transistor; 3
FIG. 4 (57) Abstract: A field effect transistor having a channel that comprises three-dimensional graphene foam. The subject ma il er of the 0 SVG …
FIG. 5 shows a 25 similar image after the etching step. It is apparent from 26 comparison of these figures that the foam is an interconnected 27 network of …
FIG. 6 shows the Raman spectrum of the three-dimensional 11 graphene after the copper has been etched away. The Raman shift 12 was studied using a Raman …
FIG. 7 shows the electrical measurement results for a 18 single transistor 22. The left-hand plot shows drain current as 19 a function of gate voltage for …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Canceled
The apparatus of claim 4, further comprising an ionic liquid, wherein said ionic liquid bathes said foam. Currently amended
The apparatus of claim 2, wherein said ionic liquid comprises 1-Butyl- 3-methylimidazolium hexafluorophosphate. Original
An apparatus comprising a field- effect transistor havin g a channel that comprises a three-dimensional g raphene foam that comprises an interconnected network of graphene strips, wherein said g raphene strips are made of a form of graphene selected from the group consisting of monola y er graphene and bilayer graphene. Currently amended
The apparatus of claim 4, wherein said strips are made of monolayer graphene. Canceled
The apparatus of claim 4, further comprising a hydrophilic agent on said graphene. Currently amended
The apparatus of claim 4, further comprising a sensor, wherein variation in a property of said transistor forms a basis for a measurement by said sensor. Currently amended
The apparatus of claim 4, wherein said transistor incorporates a scaffold. Currently amended
The apparatus of claim 4, wherein said strips are made of bilayer graphene. New
The apparatus of claim 4, wherein variation in a property of said transistor forms a basis for a measurement of both pH and strain. New
The apparatus of claim 4, wherein said transistor is a multimodal device that measures multiple inputs at the same time. New
The apparatus of claim 4, wherein said field-effect transistor comprises a source terminal and a drain terminal, wherein said channel defines a plane having a top side a bottom side, and a perimeter, and wherein said source and drain terminals connect to said perimeter. New
The apparatus of claim 4, wherein said graphene is suspended above a substrate. New
Layer stacks claimed or described, ordered top of device to substrate.
three-dimensional graphene foam field-effect transistor
Materials described outside the worked examples.
three-dimensional graphene foam
ionic liquid
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3 shows a structrual model of a foam and an estimate 2 of an effective width of a transistor; 3
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
drain_current_strain_sensitivity | 0.374 mA per percentage point of strain | three-dimensional graphene foam |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,121,334Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates steps in a device fabrication process; 26
FIG. 2 shows a structural model of a foam together with 27 estimated electron pass lengths; WO 2015/200758 PCT/US₂₀₁₅/037897 1
FIG. 3 shows a structrual model of a foam and an estimate 2 of an effective width of a transistor; 3
FIG. 4 (57) Abstract: A field effect transistor having a channel that comprises three-dimensional graphene foam. The subject ma il er of the 0 SVG …
FIG. 5 shows a 25 similar image after the etching step. It is apparent from 26 comparison of these figures that the foam is an interconnected 27 network of …
FIG. 6 shows the Raman spectrum of the three-dimensional 11 graphene after the copper has been etched away. The Raman shift 12 was studied using a Raman …
FIG. 7 shows the electrical measurement results for a 18 single transistor 22. The left-hand plot shows drain current as 19 a function of gate voltage for …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Canceled
The apparatus of claim 4, further comprising an ionic liquid, wherein said ionic liquid bathes said foam. Currently amended
The apparatus of claim 2, wherein said ionic liquid comprises 1-Butyl- 3-methylimidazolium hexafluorophosphate. Original
An apparatus comprising a field- effect transistor havin g a channel that comprises a three-dimensional g raphene foam that comprises an interconnected network of graphene strips, wherein said g raphene strips are made of a form of graphene selected from the group consisting of monola y er graphene and bilayer graphene. Currently amended
The apparatus of claim 4, wherein said strips are made of monolayer graphene. Canceled
The apparatus of claim 4, further comprising a hydrophilic agent on said graphene. Currently amended
The apparatus of claim 4, further comprising a sensor, wherein variation in a property of said transistor forms a basis for a measurement by said sensor. Currently amended
The apparatus of claim 4, wherein said transistor incorporates a scaffold. Currently amended
The apparatus of claim 4, wherein said strips are made of bilayer graphene. New
The apparatus of claim 4, wherein variation in a property of said transistor forms a basis for a measurement of both pH and strain. New
The apparatus of claim 4, wherein said transistor is a multimodal device that measures multiple inputs at the same time. New
The apparatus of claim 4, wherein said field-effect transistor comprises a source terminal and a drain terminal, wherein said channel defines a plane having a top side a bottom side, and a perimeter, and wherein said source and drain terminals connect to said perimeter. New
The apparatus of claim 4, wherein said graphene is suspended above a substrate. New
Layer stacks claimed or described, ordered top of device to substrate.
three-dimensional graphene foam field-effect transistor
Materials described outside the worked examples.
three-dimensional graphene foam
ionic liquid
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3 shows a structrual model of a foam and an estimate 2 of an effective width of a transistor; 3
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
drain_current_strain_sensitivity | 0.374 mA per percentage point of strain | three-dimensional graphene foam |
Related documents with shared materials, methods, properties, or citations.
1-Butyl-3-methylimidazolium hexafluorophosphate
monolayer graphene
hydrophilic agent
hafnium oxide
HfO₂
bilayer graphene
FIG. 4 (57) Abstract: A field effect transistor having a channel that comprises three-dimensional graphene foam. The subject ma il er of the 0 SVG …
FIG. 5 shows a 25 similar image after the etching step. It is apparent from 26 comparison of these figures that the foam is an interconnected 27 network of …
FIG. 6 shows the Raman spectrum of the three-dimensional 11 graphene after the copper has been etched away. The Raman shift 12 was studied using a Raman …
FIG. 6 shows the Raman spectrum of the three-dimensional 11 graphene after the copper has been etched away. The Raman shift 12 was studied using a Raman …
FIG. 7 shows the electrical measurement results for a 18 single transistor 22. The left-hand plot shows drain current as 19 a function of gate voltage for …
FIG. 7 shows the electrical measurement results for a 18 single transistor 22. The left-hand plot shows drain current as 19 a function of gate voltage for …
1-Butyl-3-methylimidazolium hexafluorophosphate
monolayer graphene
hydrophilic agent
hafnium oxide
HfO₂
bilayer graphene
FIG. 4 (57) Abstract: A field effect transistor having a channel that comprises three-dimensional graphene foam. The subject ma il er of the 0 SVG …
FIG. 5 shows a 25 similar image after the etching step. It is apparent from 26 comparison of these figures that the foam is an interconnected 27 network of …
FIG. 6 shows the Raman spectrum of the three-dimensional 11 graphene after the copper has been etched away. The Raman shift 12 was studied using a Raman …
FIG. 6 shows the Raman spectrum of the three-dimensional 11 graphene after the copper has been etched away. The Raman shift 12 was studied using a Raman …
FIG. 7 shows the electrical measurement results for a 18 single transistor 22. The left-hand plot shows drain current as 19 a function of gate voltage for …
FIG. 7 shows the electrical measurement results for a 18 single transistor 22. The left-hand plot shows drain current as 19 a function of gate voltage for …
1-Butyl-3-methylimidazolium hexafluorophosphate
monolayer graphene
hydrophilic agent
hafnium oxide
HfO₂
bilayer graphene
FIG. 4 (57) Abstract: A field effect transistor having a channel that comprises three-dimensional graphene foam. The subject ma il er of the 0 SVG …
FIG. 5 shows a 25 similar image after the etching step. It is apparent from 26 comparison of these figures that the foam is an interconnected 27 network of …
FIG. 6 shows the Raman spectrum of the three-dimensional 11 graphene after the copper has been etched away. The Raman shift 12 was studied using a Raman …
FIG. 6 shows the Raman spectrum of the three-dimensional 11 graphene after the copper has been etched away. The Raman shift 12 was studied using a Raman …
FIG. 7 shows the electrical measurement results for a 18 single transistor 22. The left-hand plot shows drain current as 19 a function of gate voltage for …
FIG. 7 shows the electrical measurement results for a 18 single transistor 22. The left-hand plot shows drain current as 19 a function of gate voltage for …
1-Butyl-3-methylimidazolium hexafluorophosphate
monolayer graphene
hydrophilic agent
hafnium oxide
HfO₂
bilayer graphene
FIG. 4 (57) Abstract: A field effect transistor having a channel that comprises three-dimensional graphene foam. The subject ma il er of the 0 SVG …
FIG. 5 shows a 25 similar image after the etching step. It is apparent from 26 comparison of these figures that the foam is an interconnected 27 network of …
FIG. 6 shows the Raman spectrum of the three-dimensional 11 graphene after the copper has been etched away. The Raman shift 12 was studied using a Raman …
FIG. 6 shows the Raman spectrum of the three-dimensional 11 graphene after the copper has been etched away. The Raman shift 12 was studied using a Raman …
FIG. 7 shows the electrical measurement results for a 18 single transistor 22. The left-hand plot shows drain current as 19 a function of gate voltage for …
FIG. 7 shows the electrical measurement results for a 18 single transistor 22. The left-hand plot shows drain current as 19 a function of gate voltage for …