Patent
US 9,356,151FABRICATION OF GRAPHENE NANORIBBONS AND NANOWIRES
James M. Tour, Vera Abramova, Alexander Slesarev
WILLIAM MARSH RICE UNIVERSITY·US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,356,151Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 B-C). [0011] FIGURE 2 provides data and illustrations relat in g to the fab ri cation of GNRs and wires by me ni scus-mask li thography (MML).
FIG. 2A. In a typical process (Example 1.1), the li thography pattern 15 is w n tten on the graphene film 12 in such a way that the desired GNR position …
FIG. 3A shows the follow in g Raman spectra: ar-GNR on Si/Si O₂ in blue (top), ox-GNR on Si/Si O₂ in red (middle), and the start ing CVD graphene in black …
FIG. 4. For ar-GNRs on Si/S iO 2 (
FIG. 5) reveals that the height of elevated region (that supposedly corresponds to the GNR) is ~ 3.5 nm for BN substrate, and considerably exceeds both the e …
FIG. 6 shows the histograms des cnbin g GNR width dist ri butions. The b in size is 1 nm. The number of grayscale in tensity profiles analyzed was 218 for …
FIG. 7C) shows that wires are quite u ni form in height (-15 nm), which agrees with the starting film thickness. As in GNRs, the apparent wire width from AFM …
FIG. 8A shows an SEM image of an in dividual device with the mag ni fied wire image in the in set.
FIG. 9C shows a 90 0 angle formed by GNRs. [0019] FIGURE 10 shows mean GNR widths for Al, Pt and Pd sac ri ficial metal layers in a wide range of li thography …
FIG. 10). 53 Uti li ty App li cation Attorney Docket No. 11321-P₂₇₇US Rice Tech ID No. 2013-051-02 [00258] Example 1.8. GNRs width dependence on sac n ficial …
FIG. 11). Results for a 10 nm Al layer were not dist in guishable from the 20 nm Al case, but for the 5 nm Al layer the cont in uous GNR regions were very …
FIG. 12A shows the expected GNR position. 6 Uti li ty App li cation Attorney Docket No. 11321-P₂₇₇US Rice Tech ID No. 2013-051-02 [0022] FIGURE 13 shows SEM …
FIG. 13A shows that the traces of the i ni tial pattern of stripes are clearly visible due to image contrast. However, there are no GNRs formed (
FIG. 14). If a and,8 are contact angles with substrate and with sac n ficial metal layer corr espond in gly, then x = r(cos l-sina). The reced in g contact …
FIG. 15. Depend in g on parameters used for calculations, there is a po in t at the distance of few tens layers from the wedge vertex, where the thickness of …
FIG. 16). [00283] Example 1.12. Raman spectra anal ysis [00284] The CVD graphene films used for GNR fabrication were analyzed with Raman spectroscopy to ensure …
FIG. 17). Compa n son of 4-peak and 5-peak fit was performed by fitt in g the data in region 1100 -1900 cm⁻¹ with polynomial (up to power 2) background and 4 or …
FIG. 18B). Different colors denote different devices. [0028] FIGURE 19 shows SEM images of fabricated W nanowires at different mag ni fications. [0029] FIGURE 20 …
FIG. 19, RI E conditions in Table 6). For W wires fab ri cation, Au was used as a sac n ficial 66 Uti li ty App li cation Attorney Docket No. 11321-P₂₇₇US Rice …
FIG. 20. [00306] Si nanowires were fab n cated start in g from si li con-on- in sulator (SOI) wafers with 100 nm device layer, which was pre-etched to decrease …
FIG. 21 D). [0031] FIGURE 22 shows SEM images o f S iO 2 nanowires. [0032] FIGURE 23 shows AFM images o f S iO 2 nanowires. [0033] FIGURE 24 shows images of S …
FIGS. 22- 23). Without be in g bound by theory, these results in dicate that the qua li ty of nanowires can depends on the qua li ty of start in g films, with …
FIG. 24C). [0034] FIGURE 25 illustrates the formation of steps in multistep S i O₂ nanowires. 7 Uti li ty App li cation Attorney Docket No. 11321-P₂₇₇US Rice …
FIG. 25. For in stance, in some embodiments, the second etch in g step may be repeated 4 times in order to form 4 steps on the formed wire. [00164] In some …
FIG. 26). [00310] Example 3. Chemical Fabrication of Nanowires [00311] Without be in g bound by theory, it is envisioned that the me ni scus responsible for …
FIG. 27. SEM images of the formed T i O₂ nanowires are shown in
FIG. 28. The proposed equation for the fab n cation of T i O₂ nanowires by chemical conversion of me ni scus water is as follows: TiCl 4 + (2 +x) H₂ 0-> T i …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1. A method of preparing graphene nanoribbons from a graphene film associated with a meniscus, wherein the method comprises: patterning the graphene film while the meniscus acts as a mask above a region of the graphene film, wherein the meniscus comprises a concave surface, and wherein the patterning results in formation of graphene nanoribbons from the meniscus-masked region of the graphene film.
2. The method of claim 1, wherein the meniscus-masked region is located near edges of the graphene film.
3. The method of claim 1, wherein patterning the graphene film separates the meniscus-masked region of the graphene film from the graphene film.
4. The method of claim 1, wherein patterning the graphene film comprises etching the graphene film.
9. The method of claim 1, wherein the graphene nanoribbons have widths ranging from about 0.5 nm to about 250 nm.
10. The method of claim 1, wherein the meniscus is a liquid selected from the group consisting of water, organic solvents, polymers, salts, and combinations thereof.
11. The method of claim 1, wherein the graphene nanoribbons form by the following steps: (a) associating a surface with a graphene film; (b) forming a pattern on the graphene film, wherein the forming of the pattern comprises selectively covering regions of the graphene film with a first protective layer, wherein the selective covering leaves uncovered regions of graphene film on the surface; (c) etching the uncovered regions of the graphene film on the surface, wherein the etching leads to formation of an etched pattern on the surface, and wherein the etched pattern comprises edges surrounded by graphene film; -4- ATTORNEY DOCKET NO. PATENT 1 1321-P₂₇₇US Serial No. 14/171,642 (d) depositing a second protective layer on the etched pattern, wherein the second protective layer becomes associated with the graphene film surrounding the edges of the etched pattern; (e) removing the first protective layer, wherein the removing of the first protective layer leads to fo rm ation of the meniscus-masked region between the second protective layer and the graphene film; and (f) patterning the graphene film on the surface, wherein the patterning retains the meniscus-masked region of the graphene film on the surface, and wherein the meniscus masked region of the graphene film follows the edges of the etched pattern and fo rm s graphene nanoribbons.
26. A method of preparing wires from a film associated with a meniscus, wherein the method comprises: patterning the film while the meniscus acts as a mask above a region of the film, wherein the meniscus comprises a concave surface, and wherein the patterning results in formation of a wire from the meniscus-masked region of the film.
27. The method of claim 26, wherein the meniscus-masked region is located near edges of the film.
28. The method of claim 26, wherein patterning the film separates the meniscus- masked region of the film from the film.
29. The method of claim 26, wherein patterning the film comprises etching the film.
31. The method of claim 26, wherein the film is a metallic film.
32. The method of claim 26, wherein the film is selected from the group consisting of W, A u, Al, Cr, Pt, Cu, Ni, Si, TiN, W S 2, WSe2, MoS2, BN, GaN, A l N, TiO 2, ZnO, SiO 2, SiO x (where x is less than 2 and greater than 0.5), and combinations thereof.
33. The method of claim 26, wherein the formed wire is a metal wire.
34. The method of claim 26, wherein the formed wire has a width ranging from about 5 nm to about 100 nm.
35. The method of claim 26, wherein the wires form by the following steps: (a) associating a surface with a film; (b) forming a pattern on the film, wherein the forming of the pattern comprises selectively covering regions of the film with a first protective layer, wherein the selective covering leaves uncovered regions of film on the surface; (c) etching the uncovered regions of the film on the surface, wherein the etching leads to formation of an etched pattern on the surface, and wherein the etched pattern comprises edges surrounded by film; (d) depositing a second protective layer on the etched pattern, wherein the second protective layer becomes associated with the film surrounding the edges of the etched pattern; (e) removing the first protective layer, wherein the removing of the first protective layer leads to formation of the meniscus-masked region between the second protective layer and the film; and (f) patterning the film on the surface, wherein the patterning retains the meniscus-masked region of the film on the surface, wherein the meniscus-masked region of the film represents the formed wire, and wherein the formed wire follows the edges of the etched pattern.
49. A method of preparing wires, wherein the method comprises: -9- ATTORNEY DOCKET NO. PATENT 1 1321-P₂₇₇U S Serial No. 14/171,642 (a) depositing a hydrophilic material on a surface, wherein the hydrophilic material comprises a metal, and wherein the depositing leads to formation of a hydrophilic layer on the surface; (b) exposing the surface to a water-reactive material, wherein the exposing results in formation of a second layer that follows edges of the hydrophilic layer on the surface, and wherein the second layer represents the formed wire.
51. The method of claim 49, wherein the metal is selected from the group consisting of Pd, Pt, Cr, Al, A u, and combinations thereof.
52. The method of claim 49, wherein the hydrophilic layer is a metal layer.
54. The method of claim 49, wherein the water-reactive material is selected from the group consisting of W, A u, Pt, Ti, TiC l 4, Si, SiO 2, Zn, and combinations thereof.
55. The method of claim 49, wherein the water-reactive material is TiC l 4.
56. The method of claim 49, further comprising a step of annealing the surface, wherein the annealing solidifies the wire.
59. The method of claim 49, further comprising a step of removing the hydrophilic layer from the surface.
. The method of claim 49, wherein the surface is a silicon wafer.
. The method of claim 49, wherein the formed wire has a composition selected from the group consisting of W, A u, Pt, Ti, TiC 1 4, Si, SiO 2, Zn, and combinations thereof.
. The method of claim 49, wherein the formed wire has widths ranging from about 5 nm to about 100 nm.
64. The method of claim 49, wherein the hydrophilic material is TiC l 4, and wherein the formed wire is TiO 2.-11-
50. canceled
53. The method of 52, wherein the metal layer is selected from the group consisting of Pd, Pt, Cr, Al, A u, and combinations thereof.
Materials described outside the worked examples.
graphene film/graphene nanoribbon
meniscus liquid
first protective layer polymer
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2A. In a typical process (Example 1.1), the li thography pattern 15 is w n tten on the graphene film 12 in such a way that the desired GNR position …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
GNR width range (claimed) | — | graphene film/graphene nanoribbon |
nanowire width range (claimed) | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,356,151Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 B-C). [0011] FIGURE 2 provides data and illustrations relat in g to the fab ri cation of GNRs and wires by me ni scus-mask li thography (MML).
FIG. 2A. In a typical process (Example 1.1), the li thography pattern 15 is w n tten on the graphene film 12 in such a way that the desired GNR position …
FIG. 3A shows the follow in g Raman spectra: ar-GNR on Si/Si O₂ in blue (top), ox-GNR on Si/Si O₂ in red (middle), and the start ing CVD graphene in black …
FIG. 4. For ar-GNRs on Si/S iO 2 (
FIG. 5) reveals that the height of elevated region (that supposedly corresponds to the GNR) is ~ 3.5 nm for BN substrate, and considerably exceeds both the e …
FIG. 6 shows the histograms des cnbin g GNR width dist ri butions. The b in size is 1 nm. The number of grayscale in tensity profiles analyzed was 218 for …
FIG. 7C) shows that wires are quite u ni form in height (-15 nm), which agrees with the starting film thickness. As in GNRs, the apparent wire width from AFM …
FIG. 8A shows an SEM image of an in dividual device with the mag ni fied wire image in the in set.
FIG. 9C shows a 90 0 angle formed by GNRs. [0019] FIGURE 10 shows mean GNR widths for Al, Pt and Pd sac ri ficial metal layers in a wide range of li thography …
FIG. 10). 53 Uti li ty App li cation Attorney Docket No. 11321-P₂₇₇US Rice Tech ID No. 2013-051-02 [00258] Example 1.8. GNRs width dependence on sac n ficial …
FIG. 11). Results for a 10 nm Al layer were not dist in guishable from the 20 nm Al case, but for the 5 nm Al layer the cont in uous GNR regions were very …
FIG. 12A shows the expected GNR position. 6 Uti li ty App li cation Attorney Docket No. 11321-P₂₇₇US Rice Tech ID No. 2013-051-02 [0022] FIGURE 13 shows SEM …
FIG. 13A shows that the traces of the i ni tial pattern of stripes are clearly visible due to image contrast. However, there are no GNRs formed (
FIG. 14). If a and,8 are contact angles with substrate and with sac n ficial metal layer corr espond in gly, then x = r(cos l-sina). The reced in g contact …
FIG. 15. Depend in g on parameters used for calculations, there is a po in t at the distance of few tens layers from the wedge vertex, where the thickness of …
FIG. 16). [00283] Example 1.12. Raman spectra anal ysis [00284] The CVD graphene films used for GNR fabrication were analyzed with Raman spectroscopy to ensure …
FIG. 17). Compa n son of 4-peak and 5-peak fit was performed by fitt in g the data in region 1100 -1900 cm⁻¹ with polynomial (up to power 2) background and 4 or …
FIG. 18B). Different colors denote different devices. [0028] FIGURE 19 shows SEM images of fabricated W nanowires at different mag ni fications. [0029] FIGURE 20 …
FIG. 19, RI E conditions in Table 6). For W wires fab ri cation, Au was used as a sac n ficial 66 Uti li ty App li cation Attorney Docket No. 11321-P₂₇₇US Rice …
FIG. 20. [00306] Si nanowires were fab n cated start in g from si li con-on- in sulator (SOI) wafers with 100 nm device layer, which was pre-etched to decrease …
FIG. 21 D). [0031] FIGURE 22 shows SEM images o f S iO 2 nanowires. [0032] FIGURE 23 shows AFM images o f S iO 2 nanowires. [0033] FIGURE 24 shows images of S …
FIGS. 22- 23). Without be in g bound by theory, these results in dicate that the qua li ty of nanowires can depends on the qua li ty of start in g films, with …
FIG. 24C). [0034] FIGURE 25 illustrates the formation of steps in multistep S i O₂ nanowires. 7 Uti li ty App li cation Attorney Docket No. 11321-P₂₇₇US Rice …
FIG. 25. For in stance, in some embodiments, the second etch in g step may be repeated 4 times in order to form 4 steps on the formed wire. [00164] In some …
FIG. 26). [00310] Example 3. Chemical Fabrication of Nanowires [00311] Without be in g bound by theory, it is envisioned that the me ni scus responsible for …
FIG. 27. SEM images of the formed T i O₂ nanowires are shown in
FIG. 28. The proposed equation for the fab n cation of T i O₂ nanowires by chemical conversion of me ni scus water is as follows: TiCl 4 + (2 +x) H₂ 0-> T i …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1. A method of preparing graphene nanoribbons from a graphene film associated with a meniscus, wherein the method comprises: patterning the graphene film while the meniscus acts as a mask above a region of the graphene film, wherein the meniscus comprises a concave surface, and wherein the patterning results in formation of graphene nanoribbons from the meniscus-masked region of the graphene film.
2. The method of claim 1, wherein the meniscus-masked region is located near edges of the graphene film.
3. The method of claim 1, wherein patterning the graphene film separates the meniscus-masked region of the graphene film from the graphene film.
4. The method of claim 1, wherein patterning the graphene film comprises etching the graphene film.
9. The method of claim 1, wherein the graphene nanoribbons have widths ranging from about 0.5 nm to about 250 nm.
10. The method of claim 1, wherein the meniscus is a liquid selected from the group consisting of water, organic solvents, polymers, salts, and combinations thereof.
11. The method of claim 1, wherein the graphene nanoribbons form by the following steps: (a) associating a surface with a graphene film; (b) forming a pattern on the graphene film, wherein the forming of the pattern comprises selectively covering regions of the graphene film with a first protective layer, wherein the selective covering leaves uncovered regions of graphene film on the surface; (c) etching the uncovered regions of the graphene film on the surface, wherein the etching leads to formation of an etched pattern on the surface, and wherein the etched pattern comprises edges surrounded by graphene film; -4- ATTORNEY DOCKET NO. PATENT 1 1321-P₂₇₇US Serial No. 14/171,642 (d) depositing a second protective layer on the etched pattern, wherein the second protective layer becomes associated with the graphene film surrounding the edges of the etched pattern; (e) removing the first protective layer, wherein the removing of the first protective layer leads to fo rm ation of the meniscus-masked region between the second protective layer and the graphene film; and (f) patterning the graphene film on the surface, wherein the patterning retains the meniscus-masked region of the graphene film on the surface, and wherein the meniscus masked region of the graphene film follows the edges of the etched pattern and fo rm s graphene nanoribbons.
26. A method of preparing wires from a film associated with a meniscus, wherein the method comprises: patterning the film while the meniscus acts as a mask above a region of the film, wherein the meniscus comprises a concave surface, and wherein the patterning results in formation of a wire from the meniscus-masked region of the film.
27. The method of claim 26, wherein the meniscus-masked region is located near edges of the film.
28. The method of claim 26, wherein patterning the film separates the meniscus- masked region of the film from the film.
29. The method of claim 26, wherein patterning the film comprises etching the film.
31. The method of claim 26, wherein the film is a metallic film.
32. The method of claim 26, wherein the film is selected from the group consisting of W, A u, Al, Cr, Pt, Cu, Ni, Si, TiN, W S 2, WSe2, MoS2, BN, GaN, A l N, TiO 2, ZnO, SiO 2, SiO x (where x is less than 2 and greater than 0.5), and combinations thereof.
33. The method of claim 26, wherein the formed wire is a metal wire.
34. The method of claim 26, wherein the formed wire has a width ranging from about 5 nm to about 100 nm.
35. The method of claim 26, wherein the wires form by the following steps: (a) associating a surface with a film; (b) forming a pattern on the film, wherein the forming of the pattern comprises selectively covering regions of the film with a first protective layer, wherein the selective covering leaves uncovered regions of film on the surface; (c) etching the uncovered regions of the film on the surface, wherein the etching leads to formation of an etched pattern on the surface, and wherein the etched pattern comprises edges surrounded by film; (d) depositing a second protective layer on the etched pattern, wherein the second protective layer becomes associated with the film surrounding the edges of the etched pattern; (e) removing the first protective layer, wherein the removing of the first protective layer leads to formation of the meniscus-masked region between the second protective layer and the film; and (f) patterning the film on the surface, wherein the patterning retains the meniscus-masked region of the film on the surface, wherein the meniscus-masked region of the film represents the formed wire, and wherein the formed wire follows the edges of the etched pattern.
49. A method of preparing wires, wherein the method comprises: -9- ATTORNEY DOCKET NO. PATENT 1 1321-P₂₇₇U S Serial No. 14/171,642 (a) depositing a hydrophilic material on a surface, wherein the hydrophilic material comprises a metal, and wherein the depositing leads to formation of a hydrophilic layer on the surface; (b) exposing the surface to a water-reactive material, wherein the exposing results in formation of a second layer that follows edges of the hydrophilic layer on the surface, and wherein the second layer represents the formed wire.
51. The method of claim 49, wherein the metal is selected from the group consisting of Pd, Pt, Cr, Al, A u, and combinations thereof.
52. The method of claim 49, wherein the hydrophilic layer is a metal layer.
54. The method of claim 49, wherein the water-reactive material is selected from the group consisting of W, A u, Pt, Ti, TiC l 4, Si, SiO 2, Zn, and combinations thereof.
55. The method of claim 49, wherein the water-reactive material is TiC l 4.
56. The method of claim 49, further comprising a step of annealing the surface, wherein the annealing solidifies the wire.
59. The method of claim 49, further comprising a step of removing the hydrophilic layer from the surface.
. The method of claim 49, wherein the surface is a silicon wafer.
. The method of claim 49, wherein the formed wire has a composition selected from the group consisting of W, A u, Pt, Ti, TiC 1 4, Si, SiO 2, Zn, and combinations thereof.
. The method of claim 49, wherein the formed wire has widths ranging from about 5 nm to about 100 nm.
64. The method of claim 49, wherein the hydrophilic material is TiC l 4, and wherein the formed wire is TiO 2.-11-
50. canceled
53. The method of 52, wherein the metal layer is selected from the group consisting of Pd, Pt, Cr, Al, A u, and combinations thereof.
Materials described outside the worked examples.
graphene film/graphene nanoribbon
meniscus liquid
first protective layer polymer
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2A. In a typical process (Example 1.1), the li thography pattern 15 is w n tten on the graphene film 12 in such a way that the desired GNR position …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
GNR width range (claimed) | — | graphene film/graphene nanoribbon |
nanowire width range (claimed) | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,356,151Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 B-C). [0011] FIGURE 2 provides data and illustrations relat in g to the fab ri cation of GNRs and wires by me ni scus-mask li thography (MML).
FIG. 2A. In a typical process (Example 1.1), the li thography pattern 15 is w n tten on the graphene film 12 in such a way that the desired GNR position …
FIG. 3A shows the follow in g Raman spectra: ar-GNR on Si/Si O₂ in blue (top), ox-GNR on Si/Si O₂ in red (middle), and the start ing CVD graphene in black …
FIG. 4. For ar-GNRs on Si/S iO 2 (
FIG. 5) reveals that the height of elevated region (that supposedly corresponds to the GNR) is ~ 3.5 nm for BN substrate, and considerably exceeds both the e …
FIG. 6 shows the histograms des cnbin g GNR width dist ri butions. The b in size is 1 nm. The number of grayscale in tensity profiles analyzed was 218 for …
FIG. 7C) shows that wires are quite u ni form in height (-15 nm), which agrees with the starting film thickness. As in GNRs, the apparent wire width from AFM …
FIG. 8A shows an SEM image of an in dividual device with the mag ni fied wire image in the in set.
FIG. 9C shows a 90 0 angle formed by GNRs. [0019] FIGURE 10 shows mean GNR widths for Al, Pt and Pd sac ri ficial metal layers in a wide range of li thography …
FIG. 10). 53 Uti li ty App li cation Attorney Docket No. 11321-P₂₇₇US Rice Tech ID No. 2013-051-02 [00258] Example 1.8. GNRs width dependence on sac n ficial …
FIG. 11). Results for a 10 nm Al layer were not dist in guishable from the 20 nm Al case, but for the 5 nm Al layer the cont in uous GNR regions were very …
FIG. 12A shows the expected GNR position. 6 Uti li ty App li cation Attorney Docket No. 11321-P₂₇₇US Rice Tech ID No. 2013-051-02 [0022] FIGURE 13 shows SEM …
FIG. 13A shows that the traces of the i ni tial pattern of stripes are clearly visible due to image contrast. However, there are no GNRs formed (
FIG. 14). If a and,8 are contact angles with substrate and with sac n ficial metal layer corr espond in gly, then x = r(cos l-sina). The reced in g contact …
FIG. 15. Depend in g on parameters used for calculations, there is a po in t at the distance of few tens layers from the wedge vertex, where the thickness of …
FIG. 16). [00283] Example 1.12. Raman spectra anal ysis [00284] The CVD graphene films used for GNR fabrication were analyzed with Raman spectroscopy to ensure …
FIG. 17). Compa n son of 4-peak and 5-peak fit was performed by fitt in g the data in region 1100 -1900 cm⁻¹ with polynomial (up to power 2) background and 4 or …
FIG. 18B). Different colors denote different devices. [0028] FIGURE 19 shows SEM images of fabricated W nanowires at different mag ni fications. [0029] FIGURE 20 …
FIG. 19, RI E conditions in Table 6). For W wires fab ri cation, Au was used as a sac n ficial 66 Uti li ty App li cation Attorney Docket No. 11321-P₂₇₇US Rice …
FIG. 20. [00306] Si nanowires were fab n cated start in g from si li con-on- in sulator (SOI) wafers with 100 nm device layer, which was pre-etched to decrease …
FIG. 21 D). [0031] FIGURE 22 shows SEM images o f S iO 2 nanowires. [0032] FIGURE 23 shows AFM images o f S iO 2 nanowires. [0033] FIGURE 24 shows images of S …
FIGS. 22- 23). Without be in g bound by theory, these results in dicate that the qua li ty of nanowires can depends on the qua li ty of start in g films, with …
FIG. 24C). [0034] FIGURE 25 illustrates the formation of steps in multistep S i O₂ nanowires. 7 Uti li ty App li cation Attorney Docket No. 11321-P₂₇₇US Rice …
FIG. 25. For in stance, in some embodiments, the second etch in g step may be repeated 4 times in order to form 4 steps on the formed wire. [00164] In some …
FIG. 26). [00310] Example 3. Chemical Fabrication of Nanowires [00311] Without be in g bound by theory, it is envisioned that the me ni scus responsible for …
FIG. 27. SEM images of the formed T i O₂ nanowires are shown in
FIG. 28. The proposed equation for the fab n cation of T i O₂ nanowires by chemical conversion of me ni scus water is as follows: TiCl 4 + (2 +x) H₂ 0-> T i …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1. A method of preparing graphene nanoribbons from a graphene film associated with a meniscus, wherein the method comprises: patterning the graphene film while the meniscus acts as a mask above a region of the graphene film, wherein the meniscus comprises a concave surface, and wherein the patterning results in formation of graphene nanoribbons from the meniscus-masked region of the graphene film.
2. The method of claim 1, wherein the meniscus-masked region is located near edges of the graphene film.
3. The method of claim 1, wherein patterning the graphene film separates the meniscus-masked region of the graphene film from the graphene film.
4. The method of claim 1, wherein patterning the graphene film comprises etching the graphene film.
9. The method of claim 1, wherein the graphene nanoribbons have widths ranging from about 0.5 nm to about 250 nm.
10. The method of claim 1, wherein the meniscus is a liquid selected from the group consisting of water, organic solvents, polymers, salts, and combinations thereof.
11. The method of claim 1, wherein the graphene nanoribbons form by the following steps: (a) associating a surface with a graphene film; (b) forming a pattern on the graphene film, wherein the forming of the pattern comprises selectively covering regions of the graphene film with a first protective layer, wherein the selective covering leaves uncovered regions of graphene film on the surface; (c) etching the uncovered regions of the graphene film on the surface, wherein the etching leads to formation of an etched pattern on the surface, and wherein the etched pattern comprises edges surrounded by graphene film; -4- ATTORNEY DOCKET NO. PATENT 1 1321-P₂₇₇US Serial No. 14/171,642 (d) depositing a second protective layer on the etched pattern, wherein the second protective layer becomes associated with the graphene film surrounding the edges of the etched pattern; (e) removing the first protective layer, wherein the removing of the first protective layer leads to fo rm ation of the meniscus-masked region between the second protective layer and the graphene film; and (f) patterning the graphene film on the surface, wherein the patterning retains the meniscus-masked region of the graphene film on the surface, and wherein the meniscus masked region of the graphene film follows the edges of the etched pattern and fo rm s graphene nanoribbons.
26. A method of preparing wires from a film associated with a meniscus, wherein the method comprises: patterning the film while the meniscus acts as a mask above a region of the film, wherein the meniscus comprises a concave surface, and wherein the patterning results in formation of a wire from the meniscus-masked region of the film.
27. The method of claim 26, wherein the meniscus-masked region is located near edges of the film.
28. The method of claim 26, wherein patterning the film separates the meniscus- masked region of the film from the film.
29. The method of claim 26, wherein patterning the film comprises etching the film.
31. The method of claim 26, wherein the film is a metallic film.
32. The method of claim 26, wherein the film is selected from the group consisting of W, A u, Al, Cr, Pt, Cu, Ni, Si, TiN, W S 2, WSe2, MoS2, BN, GaN, A l N, TiO 2, ZnO, SiO 2, SiO x (where x is less than 2 and greater than 0.5), and combinations thereof.
33. The method of claim 26, wherein the formed wire is a metal wire.
34. The method of claim 26, wherein the formed wire has a width ranging from about 5 nm to about 100 nm.
35. The method of claim 26, wherein the wires form by the following steps: (a) associating a surface with a film; (b) forming a pattern on the film, wherein the forming of the pattern comprises selectively covering regions of the film with a first protective layer, wherein the selective covering leaves uncovered regions of film on the surface; (c) etching the uncovered regions of the film on the surface, wherein the etching leads to formation of an etched pattern on the surface, and wherein the etched pattern comprises edges surrounded by film; (d) depositing a second protective layer on the etched pattern, wherein the second protective layer becomes associated with the film surrounding the edges of the etched pattern; (e) removing the first protective layer, wherein the removing of the first protective layer leads to formation of the meniscus-masked region between the second protective layer and the film; and (f) patterning the film on the surface, wherein the patterning retains the meniscus-masked region of the film on the surface, wherein the meniscus-masked region of the film represents the formed wire, and wherein the formed wire follows the edges of the etched pattern.
49. A method of preparing wires, wherein the method comprises: -9- ATTORNEY DOCKET NO. PATENT 1 1321-P₂₇₇U S Serial No. 14/171,642 (a) depositing a hydrophilic material on a surface, wherein the hydrophilic material comprises a metal, and wherein the depositing leads to formation of a hydrophilic layer on the surface; (b) exposing the surface to a water-reactive material, wherein the exposing results in formation of a second layer that follows edges of the hydrophilic layer on the surface, and wherein the second layer represents the formed wire.
51. The method of claim 49, wherein the metal is selected from the group consisting of Pd, Pt, Cr, Al, A u, and combinations thereof.
52. The method of claim 49, wherein the hydrophilic layer is a metal layer.
54. The method of claim 49, wherein the water-reactive material is selected from the group consisting of W, A u, Pt, Ti, TiC l 4, Si, SiO 2, Zn, and combinations thereof.
55. The method of claim 49, wherein the water-reactive material is TiC l 4.
56. The method of claim 49, further comprising a step of annealing the surface, wherein the annealing solidifies the wire.
59. The method of claim 49, further comprising a step of removing the hydrophilic layer from the surface.
. The method of claim 49, wherein the surface is a silicon wafer.
. The method of claim 49, wherein the formed wire has a composition selected from the group consisting of W, A u, Pt, Ti, TiC 1 4, Si, SiO 2, Zn, and combinations thereof.
. The method of claim 49, wherein the formed wire has widths ranging from about 5 nm to about 100 nm.
64. The method of claim 49, wherein the hydrophilic material is TiC l 4, and wherein the formed wire is TiO 2.-11-
50. canceled
53. The method of 52, wherein the metal layer is selected from the group consisting of Pd, Pt, Cr, Al, A u, and combinations thereof.
Materials described outside the worked examples.
graphene film/graphene nanoribbon
meniscus liquid
first protective layer polymer
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2A. In a typical process (Example 1.1), the li thography pattern 15 is w n tten on the graphene film 12 in such a way that the desired GNR position …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
GNR width range (claimed) | — | graphene film/graphene nanoribbon |
nanowire width range (claimed) | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
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US 9,356,151Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 B-C). [0011] FIGURE 2 provides data and illustrations relat in g to the fab ri cation of GNRs and wires by me ni scus-mask li thography (MML).
FIG. 2A. In a typical process (Example 1.1), the li thography pattern 15 is w n tten on the graphene film 12 in such a way that the desired GNR position …
FIG. 3A shows the follow in g Raman spectra: ar-GNR on Si/Si O₂ in blue (top), ox-GNR on Si/Si O₂ in red (middle), and the start ing CVD graphene in black …
FIG. 4. For ar-GNRs on Si/S iO 2 (
FIG. 5) reveals that the height of elevated region (that supposedly corresponds to the GNR) is ~ 3.5 nm for BN substrate, and considerably exceeds both the e …
FIG. 6 shows the histograms des cnbin g GNR width dist ri butions. The b in size is 1 nm. The number of grayscale in tensity profiles analyzed was 218 for …
FIG. 7C) shows that wires are quite u ni form in height (-15 nm), which agrees with the starting film thickness. As in GNRs, the apparent wire width from AFM …
FIG. 8A shows an SEM image of an in dividual device with the mag ni fied wire image in the in set.
FIG. 9C shows a 90 0 angle formed by GNRs. [0019] FIGURE 10 shows mean GNR widths for Al, Pt and Pd sac ri ficial metal layers in a wide range of li thography …
FIG. 10). 53 Uti li ty App li cation Attorney Docket No. 11321-P₂₇₇US Rice Tech ID No. 2013-051-02 [00258] Example 1.8. GNRs width dependence on sac n ficial …
FIG. 11). Results for a 10 nm Al layer were not dist in guishable from the 20 nm Al case, but for the 5 nm Al layer the cont in uous GNR regions were very …
FIG. 12A shows the expected GNR position. 6 Uti li ty App li cation Attorney Docket No. 11321-P₂₇₇US Rice Tech ID No. 2013-051-02 [0022] FIGURE 13 shows SEM …
FIG. 13A shows that the traces of the i ni tial pattern of stripes are clearly visible due to image contrast. However, there are no GNRs formed (
FIG. 14). If a and,8 are contact angles with substrate and with sac n ficial metal layer corr espond in gly, then x = r(cos l-sina). The reced in g contact …
FIG. 15. Depend in g on parameters used for calculations, there is a po in t at the distance of few tens layers from the wedge vertex, where the thickness of …
FIG. 16). [00283] Example 1.12. Raman spectra anal ysis [00284] The CVD graphene films used for GNR fabrication were analyzed with Raman spectroscopy to ensure …
FIG. 17). Compa n son of 4-peak and 5-peak fit was performed by fitt in g the data in region 1100 -1900 cm⁻¹ with polynomial (up to power 2) background and 4 or …
FIG. 18B). Different colors denote different devices. [0028] FIGURE 19 shows SEM images of fabricated W nanowires at different mag ni fications. [0029] FIGURE 20 …
FIG. 19, RI E conditions in Table 6). For W wires fab ri cation, Au was used as a sac n ficial 66 Uti li ty App li cation Attorney Docket No. 11321-P₂₇₇US Rice …
FIG. 20. [00306] Si nanowires were fab n cated start in g from si li con-on- in sulator (SOI) wafers with 100 nm device layer, which was pre-etched to decrease …
FIG. 21 D). [0031] FIGURE 22 shows SEM images o f S iO 2 nanowires. [0032] FIGURE 23 shows AFM images o f S iO 2 nanowires. [0033] FIGURE 24 shows images of S …
FIGS. 22- 23). Without be in g bound by theory, these results in dicate that the qua li ty of nanowires can depends on the qua li ty of start in g films, with …
FIG. 24C). [0034] FIGURE 25 illustrates the formation of steps in multistep S i O₂ nanowires. 7 Uti li ty App li cation Attorney Docket No. 11321-P₂₇₇US Rice …
FIG. 25. For in stance, in some embodiments, the second etch in g step may be repeated 4 times in order to form 4 steps on the formed wire. [00164] In some …
FIG. 26). [00310] Example 3. Chemical Fabrication of Nanowires [00311] Without be in g bound by theory, it is envisioned that the me ni scus responsible for …
FIG. 27. SEM images of the formed T i O₂ nanowires are shown in
FIG. 28. The proposed equation for the fab n cation of T i O₂ nanowires by chemical conversion of me ni scus water is as follows: TiCl 4 + (2 +x) H₂ 0-> T i …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1. A method of preparing graphene nanoribbons from a graphene film associated with a meniscus, wherein the method comprises: patterning the graphene film while the meniscus acts as a mask above a region of the graphene film, wherein the meniscus comprises a concave surface, and wherein the patterning results in formation of graphene nanoribbons from the meniscus-masked region of the graphene film.
2. The method of claim 1, wherein the meniscus-masked region is located near edges of the graphene film.
3. The method of claim 1, wherein patterning the graphene film separates the meniscus-masked region of the graphene film from the graphene film.
4. The method of claim 1, wherein patterning the graphene film comprises etching the graphene film.
9. The method of claim 1, wherein the graphene nanoribbons have widths ranging from about 0.5 nm to about 250 nm.
10. The method of claim 1, wherein the meniscus is a liquid selected from the group consisting of water, organic solvents, polymers, salts, and combinations thereof.
11. The method of claim 1, wherein the graphene nanoribbons form by the following steps: (a) associating a surface with a graphene film; (b) forming a pattern on the graphene film, wherein the forming of the pattern comprises selectively covering regions of the graphene film with a first protective layer, wherein the selective covering leaves uncovered regions of graphene film on the surface; (c) etching the uncovered regions of the graphene film on the surface, wherein the etching leads to formation of an etched pattern on the surface, and wherein the etched pattern comprises edges surrounded by graphene film; -4- ATTORNEY DOCKET NO. PATENT 1 1321-P₂₇₇US Serial No. 14/171,642 (d) depositing a second protective layer on the etched pattern, wherein the second protective layer becomes associated with the graphene film surrounding the edges of the etched pattern; (e) removing the first protective layer, wherein the removing of the first protective layer leads to fo rm ation of the meniscus-masked region between the second protective layer and the graphene film; and (f) patterning the graphene film on the surface, wherein the patterning retains the meniscus-masked region of the graphene film on the surface, and wherein the meniscus masked region of the graphene film follows the edges of the etched pattern and fo rm s graphene nanoribbons.
26. A method of preparing wires from a film associated with a meniscus, wherein the method comprises: patterning the film while the meniscus acts as a mask above a region of the film, wherein the meniscus comprises a concave surface, and wherein the patterning results in formation of a wire from the meniscus-masked region of the film.
27. The method of claim 26, wherein the meniscus-masked region is located near edges of the film.
28. The method of claim 26, wherein patterning the film separates the meniscus- masked region of the film from the film.
29. The method of claim 26, wherein patterning the film comprises etching the film.
31. The method of claim 26, wherein the film is a metallic film.
32. The method of claim 26, wherein the film is selected from the group consisting of W, A u, Al, Cr, Pt, Cu, Ni, Si, TiN, W S 2, WSe2, MoS2, BN, GaN, A l N, TiO 2, ZnO, SiO 2, SiO x (where x is less than 2 and greater than 0.5), and combinations thereof.
33. The method of claim 26, wherein the formed wire is a metal wire.
34. The method of claim 26, wherein the formed wire has a width ranging from about 5 nm to about 100 nm.
35. The method of claim 26, wherein the wires form by the following steps: (a) associating a surface with a film; (b) forming a pattern on the film, wherein the forming of the pattern comprises selectively covering regions of the film with a first protective layer, wherein the selective covering leaves uncovered regions of film on the surface; (c) etching the uncovered regions of the film on the surface, wherein the etching leads to formation of an etched pattern on the surface, and wherein the etched pattern comprises edges surrounded by film; (d) depositing a second protective layer on the etched pattern, wherein the second protective layer becomes associated with the film surrounding the edges of the etched pattern; (e) removing the first protective layer, wherein the removing of the first protective layer leads to formation of the meniscus-masked region between the second protective layer and the film; and (f) patterning the film on the surface, wherein the patterning retains the meniscus-masked region of the film on the surface, wherein the meniscus-masked region of the film represents the formed wire, and wherein the formed wire follows the edges of the etched pattern.
49. A method of preparing wires, wherein the method comprises: -9- ATTORNEY DOCKET NO. PATENT 1 1321-P₂₇₇U S Serial No. 14/171,642 (a) depositing a hydrophilic material on a surface, wherein the hydrophilic material comprises a metal, and wherein the depositing leads to formation of a hydrophilic layer on the surface; (b) exposing the surface to a water-reactive material, wherein the exposing results in formation of a second layer that follows edges of the hydrophilic layer on the surface, and wherein the second layer represents the formed wire.
51. The method of claim 49, wherein the metal is selected from the group consisting of Pd, Pt, Cr, Al, A u, and combinations thereof.
52. The method of claim 49, wherein the hydrophilic layer is a metal layer.
54. The method of claim 49, wherein the water-reactive material is selected from the group consisting of W, A u, Pt, Ti, TiC l 4, Si, SiO 2, Zn, and combinations thereof.
55. The method of claim 49, wherein the water-reactive material is TiC l 4.
56. The method of claim 49, further comprising a step of annealing the surface, wherein the annealing solidifies the wire.
59. The method of claim 49, further comprising a step of removing the hydrophilic layer from the surface.
. The method of claim 49, wherein the surface is a silicon wafer.
. The method of claim 49, wherein the formed wire has a composition selected from the group consisting of W, A u, Pt, Ti, TiC 1 4, Si, SiO 2, Zn, and combinations thereof.
. The method of claim 49, wherein the formed wire has widths ranging from about 5 nm to about 100 nm.
64. The method of claim 49, wherein the hydrophilic material is TiC l 4, and wherein the formed wire is TiO 2.-11-
50. canceled
53. The method of 52, wherein the metal layer is selected from the group consisting of Pd, Pt, Cr, Al, A u, and combinations thereof.
Materials described outside the worked examples.
graphene film/graphene nanoribbon
meniscus liquid
first protective layer polymer
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2A. In a typical process (Example 1.1), the li thography pattern 15 is w n tten on the graphene film 12 in such a way that the desired GNR position …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
GNR width range (claimed) | — | graphene film/graphene nanoribbon |
nanowire width range (claimed) | — |
Related documents with shared materials, methods, properties, or citations.
silicon wafer
Si
poly(methyl methacrylate)
film for wire fabrication
hydrophilic metal layer
water-reactive material
titanium tetrachloride
TiCl₄
titanium dioxide wire
TiO₂
CVD graphene
platinum wire
Pt
boron nitride substrate
BN
FIG. 2A. In a typical process (Example 1.1), the li thography pattern 15 is w n tten on the graphene film 12 in such a way that the desired GNR position …
FIG. 3A shows the follow in g Raman spectra: ar-GNR on Si/Si O₂ in blue (top), ox-GNR on Si/Si O₂ in red (middle), and the start ing CVD graphene in black …
FIG. 3A shows the follow in g Raman spectra: ar-GNR on Si/Si O₂ in blue (top), ox-GNR on Si/Si O₂ in red (middle), and the start ing CVD graphene in black …
FIG. 3A shows the follow in g Raman spectra: ar-GNR on Si/Si O₂ in blue (top), ox-GNR on Si/Si O₂ in red (middle), and the start ing CVD graphene in black …
FIG. 4. For ar-GNRs on Si/S iO 2 (
FIG. 4. For ar-GNRs on Si/S iO 2 (
FIG. 4. For ar-GNRs on Si/S iO 2 (
FIG. 7C) shows that wires are quite u ni form in height (-15 nm), which agrees with the starting film thickness. As in GNRs, the apparent wire width from AFM …
FIG. 7C) shows that wires are quite u ni form in height (-15 nm), which agrees with the starting film thickness. As in GNRs, the apparent wire width from AFM …
FIG. 7C) shows that wires are quite u ni form in height (-15 nm), which agrees with the starting film thickness. As in GNRs, the apparent wire width from AFM …
FIG. 8A shows an SEM image of an in dividual device with the mag ni fied wire image in the in set.
FIG. 9C shows a 90 0 angle formed by GNRs. [0019] FIGURE 10 shows mean GNR widths for Al, Pt and Pd sac ri ficial metal layers in a wide range of li thography …
FIG. 9C shows a 90 0 angle formed by GNRs. [0019] FIGURE 10 shows mean GNR widths for Al, Pt and Pd sac ri ficial metal layers in a wide range of li thography …
FIG. 10). 53 Uti li ty App li cation Attorney Docket No. 11321-P₂₇₇US Rice Tech ID No. 2013-051-02 [00258] Example 1.8. GNRs width dependence on sac n ficial …
FIG. 11). Results for a 10 nm Al layer were not dist in guishable from the 20 nm Al case, but for the 5 nm Al layer the cont in uous GNR regions were very …
FIG. 12A shows the expected GNR position. 6 Uti li ty App li cation Attorney Docket No. 11321-P₂₇₇US Rice Tech ID No. 2013-051-02 [0022] FIGURE 13 shows SEM …
FIG. 15. Depend in g on parameters used for calculations, there is a po in t at the distance of few tens layers from the wedge vertex, where the thickness of …
FIG. 15. Depend in g on parameters used for calculations, there is a po in t at the distance of few tens layers from the wedge vertex, where the thickness of …
FIG. 16). [00283] Example 1.12. Raman spectra anal ysis [00284] The CVD graphene films used for GNR fabrication were analyzed with Raman spectroscopy to ensure …
FIG. 18B). Different colors denote different devices. [0028] FIGURE 19 shows SEM images of fabricated W nanowires at different mag ni fications. [0029] FIGURE 20 …
FIG. 18B). Different colors denote different devices. [0028] FIGURE 19 shows SEM images of fabricated W nanowires at different mag ni fications. [0029] FIGURE 20 …
FIG. 20. [00306] Si nanowires were fab n cated start in g from si li con-on- in sulator (SOI) wafers with 100 nm device layer, which was pre-etched to decrease …
FIG. 20. [00306] Si nanowires were fab n cated start in g from si li con-on- in sulator (SOI) wafers with 100 nm device layer, which was pre-etched to decrease …
FIG. 20. [00306] Si nanowires were fab n cated start in g from si li con-on- in sulator (SOI) wafers with 100 nm device layer, which was pre-etched to decrease …
FIG. 21 D). [0031] FIGURE 22 shows SEM images o f S iO 2 nanowires. [0032] FIGURE 23 shows AFM images o f S iO 2 nanowires. [0033] FIGURE 24 shows images of S …
FIG. 21 D). [0031] FIGURE 22 shows SEM images o f S iO 2 nanowires. [0032] FIGURE 23 shows AFM images o f S iO 2 nanowires. [0033] FIGURE 24 shows images of S …
FIG. 24C). [0034] FIGURE 25 illustrates the formation of steps in multistep S i O₂ nanowires. 7 Uti li ty App li cation Attorney Docket No. 11321-P₂₇₇US Rice …
FIG. 24C). [0034] FIGURE 25 illustrates the formation of steps in multistep S i O₂ nanowires. 7 Uti li ty App li cation Attorney Docket No. 11321-P₂₇₇US Rice …
FIG. 27. SEM images of the formed T i O₂ nanowires are shown in
ar-GNR mean width from SEM (letter R pattern) | — | graphene film/graphene nanoribbon |
annealing temperature minimum (claimed) | — | — |
annealing temperature specific (claimed) | — | — |
— | 0.2–1.5 eV | — |
Thickness | 20–2000 nm | — |
Thickness | 20–60 nm | — |
Thickness | 250–2000 nm | — |
Duration | 20–120 seconds | — |
Duration | 20–90 seconds | — |
Thickness | 0.5–250 nm | — |
Thickness | 5–30 nm | — |
Thickness | 19–27 nm | — |
Thickness | 10–20 nm | — |
Thickness | 12–15 nm | — |
Thickness | 5–7 nm | — |
Thickness | 10–100 nm | — |
Thickness | 5–15 nm | — |
Thickness | 5–20 nm | — |
Thickness | 7–13 nm | — |
Thickness | 5–100 nm | — |
Thickness | 20–30 nm | — |
Temperature | 5–300 K | — |
Thickness | 30–70 nm | — |
Temperature | 350–500 °C | — |
Thickness | 5–60 nm | — |
Duration | 051-02 second | — |
Pressure | 0.00001 Torr | — |
Thickness | 0.5–1 nm | — |
Thickness | 1100–1900 cm | — |
Temperature | 77–300 K | — |
Pressure | ≤ 0.00001 Torr | — |
Thickness | ≥ 50 nm | — |
silicon wafer
Si
poly(methyl methacrylate)
film for wire fabrication
hydrophilic metal layer
water-reactive material
titanium tetrachloride
TiCl₄
titanium dioxide wire
TiO₂
CVD graphene
platinum wire
Pt
boron nitride substrate
BN
FIG. 2A. In a typical process (Example 1.1), the li thography pattern 15 is w n tten on the graphene film 12 in such a way that the desired GNR position …
FIG. 3A shows the follow in g Raman spectra: ar-GNR on Si/Si O₂ in blue (top), ox-GNR on Si/Si O₂ in red (middle), and the start ing CVD graphene in black …
FIG. 3A shows the follow in g Raman spectra: ar-GNR on Si/Si O₂ in blue (top), ox-GNR on Si/Si O₂ in red (middle), and the start ing CVD graphene in black …
FIG. 3A shows the follow in g Raman spectra: ar-GNR on Si/Si O₂ in blue (top), ox-GNR on Si/Si O₂ in red (middle), and the start ing CVD graphene in black …
FIG. 4. For ar-GNRs on Si/S iO 2 (
FIG. 4. For ar-GNRs on Si/S iO 2 (
FIG. 4. For ar-GNRs on Si/S iO 2 (
FIG. 7C) shows that wires are quite u ni form in height (-15 nm), which agrees with the starting film thickness. As in GNRs, the apparent wire width from AFM …
FIG. 7C) shows that wires are quite u ni form in height (-15 nm), which agrees with the starting film thickness. As in GNRs, the apparent wire width from AFM …
FIG. 7C) shows that wires are quite u ni form in height (-15 nm), which agrees with the starting film thickness. As in GNRs, the apparent wire width from AFM …
FIG. 8A shows an SEM image of an in dividual device with the mag ni fied wire image in the in set.
FIG. 9C shows a 90 0 angle formed by GNRs. [0019] FIGURE 10 shows mean GNR widths for Al, Pt and Pd sac ri ficial metal layers in a wide range of li thography …
FIG. 9C shows a 90 0 angle formed by GNRs. [0019] FIGURE 10 shows mean GNR widths for Al, Pt and Pd sac ri ficial metal layers in a wide range of li thography …
FIG. 10). 53 Uti li ty App li cation Attorney Docket No. 11321-P₂₇₇US Rice Tech ID No. 2013-051-02 [00258] Example 1.8. GNRs width dependence on sac n ficial …
FIG. 11). Results for a 10 nm Al layer were not dist in guishable from the 20 nm Al case, but for the 5 nm Al layer the cont in uous GNR regions were very …
FIG. 12A shows the expected GNR position. 6 Uti li ty App li cation Attorney Docket No. 11321-P₂₇₇US Rice Tech ID No. 2013-051-02 [0022] FIGURE 13 shows SEM …
FIG. 15. Depend in g on parameters used for calculations, there is a po in t at the distance of few tens layers from the wedge vertex, where the thickness of …
FIG. 15. Depend in g on parameters used for calculations, there is a po in t at the distance of few tens layers from the wedge vertex, where the thickness of …
FIG. 16). [00283] Example 1.12. Raman spectra anal ysis [00284] The CVD graphene films used for GNR fabrication were analyzed with Raman spectroscopy to ensure …
FIG. 18B). Different colors denote different devices. [0028] FIGURE 19 shows SEM images of fabricated W nanowires at different mag ni fications. [0029] FIGURE 20 …
FIG. 18B). Different colors denote different devices. [0028] FIGURE 19 shows SEM images of fabricated W nanowires at different mag ni fications. [0029] FIGURE 20 …
FIG. 20. [00306] Si nanowires were fab n cated start in g from si li con-on- in sulator (SOI) wafers with 100 nm device layer, which was pre-etched to decrease …
FIG. 20. [00306] Si nanowires were fab n cated start in g from si li con-on- in sulator (SOI) wafers with 100 nm device layer, which was pre-etched to decrease …
FIG. 20. [00306] Si nanowires were fab n cated start in g from si li con-on- in sulator (SOI) wafers with 100 nm device layer, which was pre-etched to decrease …
FIG. 21 D). [0031] FIGURE 22 shows SEM images o f S iO 2 nanowires. [0032] FIGURE 23 shows AFM images o f S iO 2 nanowires. [0033] FIGURE 24 shows images of S …
FIG. 21 D). [0031] FIGURE 22 shows SEM images o f S iO 2 nanowires. [0032] FIGURE 23 shows AFM images o f S iO 2 nanowires. [0033] FIGURE 24 shows images of S …
FIG. 24C). [0034] FIGURE 25 illustrates the formation of steps in multistep S i O₂ nanowires. 7 Uti li ty App li cation Attorney Docket No. 11321-P₂₇₇US Rice …
FIG. 24C). [0034] FIGURE 25 illustrates the formation of steps in multistep S i O₂ nanowires. 7 Uti li ty App li cation Attorney Docket No. 11321-P₂₇₇US Rice …
FIG. 27. SEM images of the formed T i O₂ nanowires are shown in
ar-GNR mean width from SEM (letter R pattern) | — | graphene film/graphene nanoribbon |
annealing temperature minimum (claimed) | — | — |
annealing temperature specific (claimed) | — | — |
— | 0.2–1.5 eV | — |
Thickness | 20–2000 nm | — |
Thickness | 20–60 nm | — |
Thickness | 250–2000 nm | — |
Duration | 20–120 seconds | — |
Duration | 20–90 seconds | — |
Thickness | 0.5–250 nm | — |
Thickness | 5–30 nm | — |
Thickness | 19–27 nm | — |
Thickness | 10–20 nm | — |
Thickness | 12–15 nm | — |
Thickness | 5–7 nm | — |
Thickness | 10–100 nm | — |
Thickness | 5–15 nm | — |
Thickness | 5–20 nm | — |
Thickness | 7–13 nm | — |
Thickness | 5–100 nm | — |
Thickness | 20–30 nm | — |
Temperature | 5–300 K | — |
Thickness | 30–70 nm | — |
Temperature | 350–500 °C | — |
Thickness | 5–60 nm | — |
Duration | 051-02 second | — |
Pressure | 0.00001 Torr | — |
Thickness | 0.5–1 nm | — |
Thickness | 1100–1900 cm | — |
Temperature | 77–300 K | — |
Pressure | ≤ 0.00001 Torr | — |
Thickness | ≥ 50 nm | — |
silicon wafer
Si
poly(methyl methacrylate)
film for wire fabrication
hydrophilic metal layer
water-reactive material
titanium tetrachloride
TiCl₄
titanium dioxide wire
TiO₂
CVD graphene
platinum wire
Pt
boron nitride substrate
BN
FIG. 2A. In a typical process (Example 1.1), the li thography pattern 15 is w n tten on the graphene film 12 in such a way that the desired GNR position …
FIG. 3A shows the follow in g Raman spectra: ar-GNR on Si/Si O₂ in blue (top), ox-GNR on Si/Si O₂ in red (middle), and the start ing CVD graphene in black …
FIG. 3A shows the follow in g Raman spectra: ar-GNR on Si/Si O₂ in blue (top), ox-GNR on Si/Si O₂ in red (middle), and the start ing CVD graphene in black …
FIG. 3A shows the follow in g Raman spectra: ar-GNR on Si/Si O₂ in blue (top), ox-GNR on Si/Si O₂ in red (middle), and the start ing CVD graphene in black …
FIG. 4. For ar-GNRs on Si/S iO 2 (
FIG. 4. For ar-GNRs on Si/S iO 2 (
FIG. 4. For ar-GNRs on Si/S iO 2 (
FIG. 7C) shows that wires are quite u ni form in height (-15 nm), which agrees with the starting film thickness. As in GNRs, the apparent wire width from AFM …
FIG. 7C) shows that wires are quite u ni form in height (-15 nm), which agrees with the starting film thickness. As in GNRs, the apparent wire width from AFM …
FIG. 7C) shows that wires are quite u ni form in height (-15 nm), which agrees with the starting film thickness. As in GNRs, the apparent wire width from AFM …
FIG. 8A shows an SEM image of an in dividual device with the mag ni fied wire image in the in set.
FIG. 9C shows a 90 0 angle formed by GNRs. [0019] FIGURE 10 shows mean GNR widths for Al, Pt and Pd sac ri ficial metal layers in a wide range of li thography …
FIG. 9C shows a 90 0 angle formed by GNRs. [0019] FIGURE 10 shows mean GNR widths for Al, Pt and Pd sac ri ficial metal layers in a wide range of li thography …
FIG. 10). 53 Uti li ty App li cation Attorney Docket No. 11321-P₂₇₇US Rice Tech ID No. 2013-051-02 [00258] Example 1.8. GNRs width dependence on sac n ficial …
FIG. 11). Results for a 10 nm Al layer were not dist in guishable from the 20 nm Al case, but for the 5 nm Al layer the cont in uous GNR regions were very …
FIG. 12A shows the expected GNR position. 6 Uti li ty App li cation Attorney Docket No. 11321-P₂₇₇US Rice Tech ID No. 2013-051-02 [0022] FIGURE 13 shows SEM …
FIG. 15. Depend in g on parameters used for calculations, there is a po in t at the distance of few tens layers from the wedge vertex, where the thickness of …
FIG. 15. Depend in g on parameters used for calculations, there is a po in t at the distance of few tens layers from the wedge vertex, where the thickness of …
FIG. 16). [00283] Example 1.12. Raman spectra anal ysis [00284] The CVD graphene films used for GNR fabrication were analyzed with Raman spectroscopy to ensure …
FIG. 18B). Different colors denote different devices. [0028] FIGURE 19 shows SEM images of fabricated W nanowires at different mag ni fications. [0029] FIGURE 20 …
FIG. 18B). Different colors denote different devices. [0028] FIGURE 19 shows SEM images of fabricated W nanowires at different mag ni fications. [0029] FIGURE 20 …
FIG. 20. [00306] Si nanowires were fab n cated start in g from si li con-on- in sulator (SOI) wafers with 100 nm device layer, which was pre-etched to decrease …
FIG. 20. [00306] Si nanowires were fab n cated start in g from si li con-on- in sulator (SOI) wafers with 100 nm device layer, which was pre-etched to decrease …
FIG. 20. [00306] Si nanowires were fab n cated start in g from si li con-on- in sulator (SOI) wafers with 100 nm device layer, which was pre-etched to decrease …
FIG. 21 D). [0031] FIGURE 22 shows SEM images o f S iO 2 nanowires. [0032] FIGURE 23 shows AFM images o f S iO 2 nanowires. [0033] FIGURE 24 shows images of S …
FIG. 21 D). [0031] FIGURE 22 shows SEM images o f S iO 2 nanowires. [0032] FIGURE 23 shows AFM images o f S iO 2 nanowires. [0033] FIGURE 24 shows images of S …
FIG. 24C). [0034] FIGURE 25 illustrates the formation of steps in multistep S i O₂ nanowires. 7 Uti li ty App li cation Attorney Docket No. 11321-P₂₇₇US Rice …
FIG. 24C). [0034] FIGURE 25 illustrates the formation of steps in multistep S i O₂ nanowires. 7 Uti li ty App li cation Attorney Docket No. 11321-P₂₇₇US Rice …
FIG. 27. SEM images of the formed T i O₂ nanowires are shown in
ar-GNR mean width from SEM (letter R pattern) | — | graphene film/graphene nanoribbon |
annealing temperature minimum (claimed) | — | — |
annealing temperature specific (claimed) | — | — |
— | 0.2–1.5 eV | — |
Thickness | 20–2000 nm | — |
Thickness | 20–60 nm | — |
Thickness | 250–2000 nm | — |
Duration | 20–120 seconds | — |
Duration | 20–90 seconds | — |
Thickness | 0.5–250 nm | — |
Thickness | 5–30 nm | — |
Thickness | 19–27 nm | — |
Thickness | 10–20 nm | — |
Thickness | 12–15 nm | — |
Thickness | 5–7 nm | — |
Thickness | 10–100 nm | — |
Thickness | 5–15 nm | — |
Thickness | 5–20 nm | — |
Thickness | 7–13 nm | — |
Thickness | 5–100 nm | — |
Thickness | 20–30 nm | — |
Temperature | 5–300 K | — |
Thickness | 30–70 nm | — |
Temperature | 350–500 °C | — |
Thickness | 5–60 nm | — |
Duration | 051-02 second | — |
Pressure | 0.00001 Torr | — |
Thickness | 0.5–1 nm | — |
Thickness | 1100–1900 cm | — |
Temperature | 77–300 K | — |
Pressure | ≤ 0.00001 Torr | — |
Thickness | ≥ 50 nm | — |
silicon wafer
Si
poly(methyl methacrylate)
film for wire fabrication
hydrophilic metal layer
water-reactive material
titanium tetrachloride
TiCl₄
titanium dioxide wire
TiO₂
CVD graphene
platinum wire
Pt
boron nitride substrate
BN
FIG. 2A. In a typical process (Example 1.1), the li thography pattern 15 is w n tten on the graphene film 12 in such a way that the desired GNR position …
FIG. 3A shows the follow in g Raman spectra: ar-GNR on Si/Si O₂ in blue (top), ox-GNR on Si/Si O₂ in red (middle), and the start ing CVD graphene in black …
FIG. 3A shows the follow in g Raman spectra: ar-GNR on Si/Si O₂ in blue (top), ox-GNR on Si/Si O₂ in red (middle), and the start ing CVD graphene in black …
FIG. 3A shows the follow in g Raman spectra: ar-GNR on Si/Si O₂ in blue (top), ox-GNR on Si/Si O₂ in red (middle), and the start ing CVD graphene in black …
FIG. 4. For ar-GNRs on Si/S iO 2 (
FIG. 4. For ar-GNRs on Si/S iO 2 (
FIG. 4. For ar-GNRs on Si/S iO 2 (
FIG. 7C) shows that wires are quite u ni form in height (-15 nm), which agrees with the starting film thickness. As in GNRs, the apparent wire width from AFM …
FIG. 7C) shows that wires are quite u ni form in height (-15 nm), which agrees with the starting film thickness. As in GNRs, the apparent wire width from AFM …
FIG. 7C) shows that wires are quite u ni form in height (-15 nm), which agrees with the starting film thickness. As in GNRs, the apparent wire width from AFM …
FIG. 8A shows an SEM image of an in dividual device with the mag ni fied wire image in the in set.
FIG. 9C shows a 90 0 angle formed by GNRs. [0019] FIGURE 10 shows mean GNR widths for Al, Pt and Pd sac ri ficial metal layers in a wide range of li thography …
FIG. 9C shows a 90 0 angle formed by GNRs. [0019] FIGURE 10 shows mean GNR widths for Al, Pt and Pd sac ri ficial metal layers in a wide range of li thography …
FIG. 10). 53 Uti li ty App li cation Attorney Docket No. 11321-P₂₇₇US Rice Tech ID No. 2013-051-02 [00258] Example 1.8. GNRs width dependence on sac n ficial …
FIG. 11). Results for a 10 nm Al layer were not dist in guishable from the 20 nm Al case, but for the 5 nm Al layer the cont in uous GNR regions were very …
FIG. 12A shows the expected GNR position. 6 Uti li ty App li cation Attorney Docket No. 11321-P₂₇₇US Rice Tech ID No. 2013-051-02 [0022] FIGURE 13 shows SEM …
FIG. 15. Depend in g on parameters used for calculations, there is a po in t at the distance of few tens layers from the wedge vertex, where the thickness of …
FIG. 15. Depend in g on parameters used for calculations, there is a po in t at the distance of few tens layers from the wedge vertex, where the thickness of …
FIG. 16). [00283] Example 1.12. Raman spectra anal ysis [00284] The CVD graphene films used for GNR fabrication were analyzed with Raman spectroscopy to ensure …
FIG. 18B). Different colors denote different devices. [0028] FIGURE 19 shows SEM images of fabricated W nanowires at different mag ni fications. [0029] FIGURE 20 …
FIG. 18B). Different colors denote different devices. [0028] FIGURE 19 shows SEM images of fabricated W nanowires at different mag ni fications. [0029] FIGURE 20 …
FIG. 20. [00306] Si nanowires were fab n cated start in g from si li con-on- in sulator (SOI) wafers with 100 nm device layer, which was pre-etched to decrease …
FIG. 20. [00306] Si nanowires were fab n cated start in g from si li con-on- in sulator (SOI) wafers with 100 nm device layer, which was pre-etched to decrease …
FIG. 20. [00306] Si nanowires were fab n cated start in g from si li con-on- in sulator (SOI) wafers with 100 nm device layer, which was pre-etched to decrease …
FIG. 21 D). [0031] FIGURE 22 shows SEM images o f S iO 2 nanowires. [0032] FIGURE 23 shows AFM images o f S iO 2 nanowires. [0033] FIGURE 24 shows images of S …
FIG. 21 D). [0031] FIGURE 22 shows SEM images o f S iO 2 nanowires. [0032] FIGURE 23 shows AFM images o f S iO 2 nanowires. [0033] FIGURE 24 shows images of S …
FIG. 24C). [0034] FIGURE 25 illustrates the formation of steps in multistep S i O₂ nanowires. 7 Uti li ty App li cation Attorney Docket No. 11321-P₂₇₇US Rice …
FIG. 24C). [0034] FIGURE 25 illustrates the formation of steps in multistep S i O₂ nanowires. 7 Uti li ty App li cation Attorney Docket No. 11321-P₂₇₇US Rice …
FIG. 27. SEM images of the formed T i O₂ nanowires are shown in
ar-GNR mean width from SEM (letter R pattern) | — | graphene film/graphene nanoribbon |
annealing temperature minimum (claimed) | — | — |
annealing temperature specific (claimed) | — | — |
— | 0.2–1.5 eV | — |
Thickness | 20–2000 nm | — |
Thickness | 20–60 nm | — |
Thickness | 250–2000 nm | — |
Duration | 20–120 seconds | — |
Duration | 20–90 seconds | — |
Thickness | 0.5–250 nm | — |
Thickness | 5–30 nm | — |
Thickness | 19–27 nm | — |
Thickness | 10–20 nm | — |
Thickness | 12–15 nm | — |
Thickness | 5–7 nm | — |
Thickness | 10–100 nm | — |
Thickness | 5–15 nm | — |
Thickness | 5–20 nm | — |
Thickness | 7–13 nm | — |
Thickness | 5–100 nm | — |
Thickness | 20–30 nm | — |
Temperature | 5–300 K | — |
Thickness | 30–70 nm | — |
Temperature | 350–500 °C | — |
Thickness | 5–60 nm | — |
Duration | 051-02 second | — |
Pressure | 0.00001 Torr | — |
Thickness | 0.5–1 nm | — |
Thickness | 1100–1900 cm | — |
Temperature | 77–300 K | — |
Pressure | ≤ 0.00001 Torr | — |
Thickness | ≥ 50 nm | — |