Patent
US 10,053,366BERNAL-STACKED GRAPHENE LAYERS AND METHODS OF MAKING THE
James M. Tour, Zhengzong Sun, Abdul-Rahman O. Raji
William Marsh Rice University·US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 10,053,366Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 5 A shows SEM i mage of graphene grown under monolayer conditions (15 m in) followed by bilayers growth conditions (15 m in). The scale bar is 1 mm. …
FIG. 2B. [0014] FIGURE 3 sh ows optical photographs of graphene films transfe rr ed onto quartz substrates (-0.67 in2). The arrow begins at the monolayer …
FIG. 3. The graphene films became successively darker, suggesting that thicker films were grown with increasing P C H4. The thickness of the films was …
FIG. 4, both the I 2D and IG increas e as the thickness increases, while the relative ratio between the two peaks does not change, suggesting a relatively weak …
FIG. 5. The 2D peak of bilayer graphene can be fitted with 4 Lorentzian curves while the 2D peak in t n layer graphene can be fitted with 6 Lorentzian curves. 24 …
FIGS. 6G-I show high resolution TEM (HRTEM) of randomly chosen representative edges of bi-, t n -, and tetralayer graphene that shows two, three, or four …
FIGS. 7A-B) and HRTEM (
FIG. 8C.
FIG. 9). In
FIG. 10B) of a bilayer graphene film. [0022] FIGURE 11 shows electrical measurements of Be rn al-stacked bilayer graphene.
FIG. 11B shows a cross-sectional view of the bilayer graphene device. FIG. i C shows graphene elect n cal conductance as a function of top gate voltage V, at …
FIG. 12), which is considerably higher than the mob ili ty for solution-exfo li ated Be rn al bilayer graphene. [00104] Additional control expe n ments were …
FIG. 13A shows SEM i mage of bilayer graphene grown for 15 m in. The scale bar is 1 mm. The 6 Utili ty App li cation Atto rn ey Docket No. 11321-P₂₇₄US Rice …
FIG. 14C) of bilayer graphene grown for 30 m m are also shown. There was no change in thickness noted with the increased growth time. [0026] FIGURE 15 shows …
FIG. 15C) of graphene grown under monolayer conditions for 15 m m and then bilayer conditions for another 15 m in. There was no thickness change observed after …
FIG. 16. In this way, some of the seeds grow into graphene i slands, forming and extending synchronously rather than layer-by-layer. The i slands maintain …
FIG. 17C is a representative Raman spectrum of these bilayer graphene seeds and i slands, which shows the 7 Utili ty App li cation Atto rn ey Docket No. …
FIG. 18). 27 Utili ty App li cation Atto rn ey Docket No. 11321-P₂₇₄US Rice Tech ID No. 2013-037-02 [00107] Example 1.1. CVD Growth [00108] In a 4 8-inch-long …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of controllably forming Bernal-stacked graphene layers, wherein the method comprises: cleaning a surface of a catalyst; annealing the surface of the catalyst; applying a carbon source onto the cleaned and annealed surface of the catalyst in a reaction chamber; and growing the Bernal-stacked graphene layers on the surface of the catalyst in the reaction chamber, wherein the method further comprises controlling the number of formed Bernal-stacked graphene layers by controlling at least the following growth parameters: (a) a total pressure of the reaction chamber 1 wherein the controlling of the total pressure comprises ad j ustin g the total pressure; and (b) a ratio of reductive gas pressure to carbon source pressure in the reaction chamber, wherein the controlling of the ratio comprises maintaining the ratio at a fixed number, wherein an increase in the total pressure of the reaction chamber at the maintained ratio of reductive gas pressure to carbon source pressure in the reaction chamber increases the number of Bernal-stacked g raphene la y ers, and wherein a decrease in the total pressure of the reaction chamber at the maintained ratio of reductive gas pressure to carbon source pressure in the reaction chamber decreases the number of Bernal-stacked g raphene la y ers. Currently amended
The method of claim 1, further comprising a step of placing the reaction chamber under a stream of a reductive gas. Original
The method of claim 1, wherein the catalyst is selected from the group consisting of Ni, Co, Fe, Pt, Au, Al, Cr, Cu, Mg, Mn, Mo, Rh, Si, Ta, Ti, W, U, V, Zr, and combinations thereof. Previously presented
The method of claim 1, wherein the catalyst is a copper foil. Original
The method of claim 1, wherein the catalyst has a surface area ranging from about 1 cm 2 to about 10 m 2. Original
The method of claim 1, wherein cleaning the surface of the catalyst comprises electrochemical-polishing the surface of the catalyst. Original
The method of claim 1, wherein annealing the surface of the catalyst comprises thermal annealing. Original
The method of claim 1, wherein the applying of the carbon source occurs by chemical vapor deposition. Original
The method of claim 1, wherein the carbon source is selected from the group consisting of hydrocarbons, polymers, non-polymeric carbon sources, small molecules, organic compounds, fullerenes, fluorenes, carbon nanotubes, phenylene, ethylenes, sucrose, sugars, polysaccharides, carbohydrates, proteins, and combinations thereof. Original
The method of claim 1, wherein the carbon source is a hydrocarbon. Original
The method of claim 1, wherein the carbon source has a pressure ranging from about 0.2 Torr to about 30 Torr. Original
The method of claim 1, wherein the growing occurs at temperatures of at least about 1,000 °C. Original
The method of claim 1, wherein the growing occurs while the reaction chamber has a total pressure ranging from about 5 Torr to about 800 Torr. Original
The method of claim 1, wherein the growing occurs for less than about 15 minutes. Original
The method of claim 1, further comprising a step of terminating the growing step by cooling the surface of the catalyst. Previously presented
The method of claim 1, further comprising a step of transferring the formed Bernal-stacked graphene layers from the surface of the catalyst onto a substrate. Original
The method of claim 1, wherein the growing occurs from multiple growth centers, wherein the growth centers comprise multilayer graphene seeds, wherein the growth centers grow laterally and epitaxially, and wherein the growth centers merge seamlessly to form Bernal-stacked graphene layers. Original
The method of claim 1, wherein the Bernal-stacked graphene layers have from 2 to 10 Bernal-stacked graphene layers. Original
The method of claim 1, wherein the Bernal-stacked graphene layers have more than 10 Bern al-stacked graphene layers. Original
The method of claim 1, wherein the Bernal-stacked graphene layers are in polycrystalline form. Original
The method of claim 1, wherein the Bernal-stacked graphene layers have domain sizes ranging from about 1 p m to about 5 pm. Original
The method of claim 1, wherein the growth parameters further comprise one or more growth parameters selected from the group consisting of a reductive gas flow rate in the reaction chamber, growth temperature, growth time, a cooling rate of the surface of the catalyst after the growing step, and combinations thereof. Previously presented
The method of claim 1, wherein the controlling of the total pressure comprises adjusting the pressure of the carbon source in the reaction chamber, wherein an increase in the pressure of the carbon source increases the number of Bernal- stacked graphene layers, and wherein a decrease in the pressure of the carbon source decreases the number of Bernal- stacked graphene layers. Currently amended
The method of claim 1, wherein the controlling of the total pressure comprises adjusting the pressure of a reductive gas in the reaction chamber, wherein an increase in the pressure of the reductive gas increases the number of Bernal- stacked graphene layers, and wherein a decrease in the pressure of the reductive gas decreases the number of Bernal- stacked graphene layers. Currently amended
The method of claim 1, wherein the total pressure of the reaction chamber is controlled at a range from about 5 Torr to about 800 Torr. Previously presented
The method of claim 1, wherein the ratio of the reductive gas pressure to the carbon source pressure is maintained at about 28. Currently amended
Canceled
Canceled
Canceled
Canceled
A Bernal-stacked graphene film comprising a plurality of Bernal-stacked graphene layers, wherein the Bernal-stacked graphene layers are uniform in structure, and wherein the Bernal-stacked graphene layers are in polycrystalline form. Withdrawn
The Bernal-stacked graphene film of claim 38, wherein the Bernal-stacked graphene layers have domain sizes ranging from about 1 p m to about 5 pm. Withdrawn
The Bernal-stacked graphene film of claim 38, wherein the Bernal-stacked graphene film has from 2 to 10 Bernal-stacked graphene layers. Withdrawn
The Bernal-stacked graphene film of claim 38, wherein the Bernal-stacked graphene film has from 2 to 4 Bernal-stacked graphene layers. Withdrawn
The Bernal-stacked graphene film of claim 38, wherein the Bernal-stacked graphene film has 2 Bernal-stacked graphene layers. Withdrawn
The Bernal-stacked graphene film of claim 38, wherein the Bernal-stacked graphene film has more than 10 Bern al-stacked graphene layers. Withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
Bernal-stacked graphene film
Materials described outside the worked examples.
Bernal-stacked graphene
carbon source
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 5 A shows SEM i mage of graphene grown under monolayer conditions (15 m in) followed by bilayers growth conditions (15 m in). The scale bar is 1 mm. …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Pressure | 0.001–1500 Torr | — |
Pressure |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,053,366Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 5 A shows SEM i mage of graphene grown under monolayer conditions (15 m in) followed by bilayers growth conditions (15 m in). The scale bar is 1 mm. …
FIG. 2B. [0014] FIGURE 3 sh ows optical photographs of graphene films transfe rr ed onto quartz substrates (-0.67 in2). The arrow begins at the monolayer …
FIG. 3. The graphene films became successively darker, suggesting that thicker films were grown with increasing P C H4. The thickness of the films was …
FIG. 4, both the I 2D and IG increas e as the thickness increases, while the relative ratio between the two peaks does not change, suggesting a relatively weak …
FIG. 5. The 2D peak of bilayer graphene can be fitted with 4 Lorentzian curves while the 2D peak in t n layer graphene can be fitted with 6 Lorentzian curves. 24 …
FIGS. 6G-I show high resolution TEM (HRTEM) of randomly chosen representative edges of bi-, t n -, and tetralayer graphene that shows two, three, or four …
FIGS. 7A-B) and HRTEM (
FIG. 8C.
FIG. 9). In
FIG. 10B) of a bilayer graphene film. [0022] FIGURE 11 shows electrical measurements of Be rn al-stacked bilayer graphene.
FIG. 11B shows a cross-sectional view of the bilayer graphene device. FIG. i C shows graphene elect n cal conductance as a function of top gate voltage V, at …
FIG. 12), which is considerably higher than the mob ili ty for solution-exfo li ated Be rn al bilayer graphene. [00104] Additional control expe n ments were …
FIG. 13A shows SEM i mage of bilayer graphene grown for 15 m in. The scale bar is 1 mm. The 6 Utili ty App li cation Atto rn ey Docket No. 11321-P₂₇₄US Rice …
FIG. 14C) of bilayer graphene grown for 30 m m are also shown. There was no change in thickness noted with the increased growth time. [0026] FIGURE 15 shows …
FIG. 15C) of graphene grown under monolayer conditions for 15 m m and then bilayer conditions for another 15 m in. There was no thickness change observed after …
FIG. 16. In this way, some of the seeds grow into graphene i slands, forming and extending synchronously rather than layer-by-layer. The i slands maintain …
FIG. 17C is a representative Raman spectrum of these bilayer graphene seeds and i slands, which shows the 7 Utili ty App li cation Atto rn ey Docket No. …
FIG. 18). 27 Utili ty App li cation Atto rn ey Docket No. 11321-P₂₇₄US Rice Tech ID No. 2013-037-02 [00107] Example 1.1. CVD Growth [00108] In a 4 8-inch-long …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of controllably forming Bernal-stacked graphene layers, wherein the method comprises: cleaning a surface of a catalyst; annealing the surface of the catalyst; applying a carbon source onto the cleaned and annealed surface of the catalyst in a reaction chamber; and growing the Bernal-stacked graphene layers on the surface of the catalyst in the reaction chamber, wherein the method further comprises controlling the number of formed Bernal-stacked graphene layers by controlling at least the following growth parameters: (a) a total pressure of the reaction chamber 1 wherein the controlling of the total pressure comprises ad j ustin g the total pressure; and (b) a ratio of reductive gas pressure to carbon source pressure in the reaction chamber, wherein the controlling of the ratio comprises maintaining the ratio at a fixed number, wherein an increase in the total pressure of the reaction chamber at the maintained ratio of reductive gas pressure to carbon source pressure in the reaction chamber increases the number of Bernal-stacked g raphene la y ers, and wherein a decrease in the total pressure of the reaction chamber at the maintained ratio of reductive gas pressure to carbon source pressure in the reaction chamber decreases the number of Bernal-stacked g raphene la y ers. Currently amended
The method of claim 1, further comprising a step of placing the reaction chamber under a stream of a reductive gas. Original
The method of claim 1, wherein the catalyst is selected from the group consisting of Ni, Co, Fe, Pt, Au, Al, Cr, Cu, Mg, Mn, Mo, Rh, Si, Ta, Ti, W, U, V, Zr, and combinations thereof. Previously presented
The method of claim 1, wherein the catalyst is a copper foil. Original
The method of claim 1, wherein the catalyst has a surface area ranging from about 1 cm 2 to about 10 m 2. Original
The method of claim 1, wherein cleaning the surface of the catalyst comprises electrochemical-polishing the surface of the catalyst. Original
The method of claim 1, wherein annealing the surface of the catalyst comprises thermal annealing. Original
The method of claim 1, wherein the applying of the carbon source occurs by chemical vapor deposition. Original
The method of claim 1, wherein the carbon source is selected from the group consisting of hydrocarbons, polymers, non-polymeric carbon sources, small molecules, organic compounds, fullerenes, fluorenes, carbon nanotubes, phenylene, ethylenes, sucrose, sugars, polysaccharides, carbohydrates, proteins, and combinations thereof. Original
The method of claim 1, wherein the carbon source is a hydrocarbon. Original
The method of claim 1, wherein the carbon source has a pressure ranging from about 0.2 Torr to about 30 Torr. Original
The method of claim 1, wherein the growing occurs at temperatures of at least about 1,000 °C. Original
The method of claim 1, wherein the growing occurs while the reaction chamber has a total pressure ranging from about 5 Torr to about 800 Torr. Original
The method of claim 1, wherein the growing occurs for less than about 15 minutes. Original
The method of claim 1, further comprising a step of terminating the growing step by cooling the surface of the catalyst. Previously presented
The method of claim 1, further comprising a step of transferring the formed Bernal-stacked graphene layers from the surface of the catalyst onto a substrate. Original
The method of claim 1, wherein the growing occurs from multiple growth centers, wherein the growth centers comprise multilayer graphene seeds, wherein the growth centers grow laterally and epitaxially, and wherein the growth centers merge seamlessly to form Bernal-stacked graphene layers. Original
The method of claim 1, wherein the Bernal-stacked graphene layers have from 2 to 10 Bernal-stacked graphene layers. Original
The method of claim 1, wherein the Bernal-stacked graphene layers have more than 10 Bern al-stacked graphene layers. Original
The method of claim 1, wherein the Bernal-stacked graphene layers are in polycrystalline form. Original
The method of claim 1, wherein the Bernal-stacked graphene layers have domain sizes ranging from about 1 p m to about 5 pm. Original
The method of claim 1, wherein the growth parameters further comprise one or more growth parameters selected from the group consisting of a reductive gas flow rate in the reaction chamber, growth temperature, growth time, a cooling rate of the surface of the catalyst after the growing step, and combinations thereof. Previously presented
The method of claim 1, wherein the controlling of the total pressure comprises adjusting the pressure of the carbon source in the reaction chamber, wherein an increase in the pressure of the carbon source increases the number of Bernal- stacked graphene layers, and wherein a decrease in the pressure of the carbon source decreases the number of Bernal- stacked graphene layers. Currently amended
The method of claim 1, wherein the controlling of the total pressure comprises adjusting the pressure of a reductive gas in the reaction chamber, wherein an increase in the pressure of the reductive gas increases the number of Bernal- stacked graphene layers, and wherein a decrease in the pressure of the reductive gas decreases the number of Bernal- stacked graphene layers. Currently amended
The method of claim 1, wherein the total pressure of the reaction chamber is controlled at a range from about 5 Torr to about 800 Torr. Previously presented
The method of claim 1, wherein the ratio of the reductive gas pressure to the carbon source pressure is maintained at about 28. Currently amended
Canceled
Canceled
Canceled
Canceled
A Bernal-stacked graphene film comprising a plurality of Bernal-stacked graphene layers, wherein the Bernal-stacked graphene layers are uniform in structure, and wherein the Bernal-stacked graphene layers are in polycrystalline form. Withdrawn
The Bernal-stacked graphene film of claim 38, wherein the Bernal-stacked graphene layers have domain sizes ranging from about 1 p m to about 5 pm. Withdrawn
The Bernal-stacked graphene film of claim 38, wherein the Bernal-stacked graphene film has from 2 to 10 Bernal-stacked graphene layers. Withdrawn
The Bernal-stacked graphene film of claim 38, wherein the Bernal-stacked graphene film has from 2 to 4 Bernal-stacked graphene layers. Withdrawn
The Bernal-stacked graphene film of claim 38, wherein the Bernal-stacked graphene film has 2 Bernal-stacked graphene layers. Withdrawn
The Bernal-stacked graphene film of claim 38, wherein the Bernal-stacked graphene film has more than 10 Bern al-stacked graphene layers. Withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
Bernal-stacked graphene film
Materials described outside the worked examples.
Bernal-stacked graphene
carbon source
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 5 A shows SEM i mage of graphene grown under monolayer conditions (15 m in) followed by bilayers growth conditions (15 m in). The scale bar is 1 mm. …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Pressure | 0.001–1500 Torr | — |
Pressure |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,053,366Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 5 A shows SEM i mage of graphene grown under monolayer conditions (15 m in) followed by bilayers growth conditions (15 m in). The scale bar is 1 mm. …
FIG. 2B. [0014] FIGURE 3 sh ows optical photographs of graphene films transfe rr ed onto quartz substrates (-0.67 in2). The arrow begins at the monolayer …
FIG. 3. The graphene films became successively darker, suggesting that thicker films were grown with increasing P C H4. The thickness of the films was …
FIG. 4, both the I 2D and IG increas e as the thickness increases, while the relative ratio between the two peaks does not change, suggesting a relatively weak …
FIG. 5. The 2D peak of bilayer graphene can be fitted with 4 Lorentzian curves while the 2D peak in t n layer graphene can be fitted with 6 Lorentzian curves. 24 …
FIGS. 6G-I show high resolution TEM (HRTEM) of randomly chosen representative edges of bi-, t n -, and tetralayer graphene that shows two, three, or four …
FIGS. 7A-B) and HRTEM (
FIG. 8C.
FIG. 9). In
FIG. 10B) of a bilayer graphene film. [0022] FIGURE 11 shows electrical measurements of Be rn al-stacked bilayer graphene.
FIG. 11B shows a cross-sectional view of the bilayer graphene device. FIG. i C shows graphene elect n cal conductance as a function of top gate voltage V, at …
FIG. 12), which is considerably higher than the mob ili ty for solution-exfo li ated Be rn al bilayer graphene. [00104] Additional control expe n ments were …
FIG. 13A shows SEM i mage of bilayer graphene grown for 15 m in. The scale bar is 1 mm. The 6 Utili ty App li cation Atto rn ey Docket No. 11321-P₂₇₄US Rice …
FIG. 14C) of bilayer graphene grown for 30 m m are also shown. There was no change in thickness noted with the increased growth time. [0026] FIGURE 15 shows …
FIG. 15C) of graphene grown under monolayer conditions for 15 m m and then bilayer conditions for another 15 m in. There was no thickness change observed after …
FIG. 16. In this way, some of the seeds grow into graphene i slands, forming and extending synchronously rather than layer-by-layer. The i slands maintain …
FIG. 17C is a representative Raman spectrum of these bilayer graphene seeds and i slands, which shows the 7 Utili ty App li cation Atto rn ey Docket No. …
FIG. 18). 27 Utili ty App li cation Atto rn ey Docket No. 11321-P₂₇₄US Rice Tech ID No. 2013-037-02 [00107] Example 1.1. CVD Growth [00108] In a 4 8-inch-long …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of controllably forming Bernal-stacked graphene layers, wherein the method comprises: cleaning a surface of a catalyst; annealing the surface of the catalyst; applying a carbon source onto the cleaned and annealed surface of the catalyst in a reaction chamber; and growing the Bernal-stacked graphene layers on the surface of the catalyst in the reaction chamber, wherein the method further comprises controlling the number of formed Bernal-stacked graphene layers by controlling at least the following growth parameters: (a) a total pressure of the reaction chamber 1 wherein the controlling of the total pressure comprises ad j ustin g the total pressure; and (b) a ratio of reductive gas pressure to carbon source pressure in the reaction chamber, wherein the controlling of the ratio comprises maintaining the ratio at a fixed number, wherein an increase in the total pressure of the reaction chamber at the maintained ratio of reductive gas pressure to carbon source pressure in the reaction chamber increases the number of Bernal-stacked g raphene la y ers, and wherein a decrease in the total pressure of the reaction chamber at the maintained ratio of reductive gas pressure to carbon source pressure in the reaction chamber decreases the number of Bernal-stacked g raphene la y ers. Currently amended
The method of claim 1, further comprising a step of placing the reaction chamber under a stream of a reductive gas. Original
The method of claim 1, wherein the catalyst is selected from the group consisting of Ni, Co, Fe, Pt, Au, Al, Cr, Cu, Mg, Mn, Mo, Rh, Si, Ta, Ti, W, U, V, Zr, and combinations thereof. Previously presented
The method of claim 1, wherein the catalyst is a copper foil. Original
The method of claim 1, wherein the catalyst has a surface area ranging from about 1 cm 2 to about 10 m 2. Original
The method of claim 1, wherein cleaning the surface of the catalyst comprises electrochemical-polishing the surface of the catalyst. Original
The method of claim 1, wherein annealing the surface of the catalyst comprises thermal annealing. Original
The method of claim 1, wherein the applying of the carbon source occurs by chemical vapor deposition. Original
The method of claim 1, wherein the carbon source is selected from the group consisting of hydrocarbons, polymers, non-polymeric carbon sources, small molecules, organic compounds, fullerenes, fluorenes, carbon nanotubes, phenylene, ethylenes, sucrose, sugars, polysaccharides, carbohydrates, proteins, and combinations thereof. Original
The method of claim 1, wherein the carbon source is a hydrocarbon. Original
The method of claim 1, wherein the carbon source has a pressure ranging from about 0.2 Torr to about 30 Torr. Original
The method of claim 1, wherein the growing occurs at temperatures of at least about 1,000 °C. Original
The method of claim 1, wherein the growing occurs while the reaction chamber has a total pressure ranging from about 5 Torr to about 800 Torr. Original
The method of claim 1, wherein the growing occurs for less than about 15 minutes. Original
The method of claim 1, further comprising a step of terminating the growing step by cooling the surface of the catalyst. Previously presented
The method of claim 1, further comprising a step of transferring the formed Bernal-stacked graphene layers from the surface of the catalyst onto a substrate. Original
The method of claim 1, wherein the growing occurs from multiple growth centers, wherein the growth centers comprise multilayer graphene seeds, wherein the growth centers grow laterally and epitaxially, and wherein the growth centers merge seamlessly to form Bernal-stacked graphene layers. Original
The method of claim 1, wherein the Bernal-stacked graphene layers have from 2 to 10 Bernal-stacked graphene layers. Original
The method of claim 1, wherein the Bernal-stacked graphene layers have more than 10 Bern al-stacked graphene layers. Original
The method of claim 1, wherein the Bernal-stacked graphene layers are in polycrystalline form. Original
The method of claim 1, wherein the Bernal-stacked graphene layers have domain sizes ranging from about 1 p m to about 5 pm. Original
The method of claim 1, wherein the growth parameters further comprise one or more growth parameters selected from the group consisting of a reductive gas flow rate in the reaction chamber, growth temperature, growth time, a cooling rate of the surface of the catalyst after the growing step, and combinations thereof. Previously presented
The method of claim 1, wherein the controlling of the total pressure comprises adjusting the pressure of the carbon source in the reaction chamber, wherein an increase in the pressure of the carbon source increases the number of Bernal- stacked graphene layers, and wherein a decrease in the pressure of the carbon source decreases the number of Bernal- stacked graphene layers. Currently amended
The method of claim 1, wherein the controlling of the total pressure comprises adjusting the pressure of a reductive gas in the reaction chamber, wherein an increase in the pressure of the reductive gas increases the number of Bernal- stacked graphene layers, and wherein a decrease in the pressure of the reductive gas decreases the number of Bernal- stacked graphene layers. Currently amended
The method of claim 1, wherein the total pressure of the reaction chamber is controlled at a range from about 5 Torr to about 800 Torr. Previously presented
The method of claim 1, wherein the ratio of the reductive gas pressure to the carbon source pressure is maintained at about 28. Currently amended
Canceled
Canceled
Canceled
Canceled
A Bernal-stacked graphene film comprising a plurality of Bernal-stacked graphene layers, wherein the Bernal-stacked graphene layers are uniform in structure, and wherein the Bernal-stacked graphene layers are in polycrystalline form. Withdrawn
The Bernal-stacked graphene film of claim 38, wherein the Bernal-stacked graphene layers have domain sizes ranging from about 1 p m to about 5 pm. Withdrawn
The Bernal-stacked graphene film of claim 38, wherein the Bernal-stacked graphene film has from 2 to 10 Bernal-stacked graphene layers. Withdrawn
The Bernal-stacked graphene film of claim 38, wherein the Bernal-stacked graphene film has from 2 to 4 Bernal-stacked graphene layers. Withdrawn
The Bernal-stacked graphene film of claim 38, wherein the Bernal-stacked graphene film has 2 Bernal-stacked graphene layers. Withdrawn
The Bernal-stacked graphene film of claim 38, wherein the Bernal-stacked graphene film has more than 10 Bern al-stacked graphene layers. Withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
Bernal-stacked graphene film
Materials described outside the worked examples.
Bernal-stacked graphene
carbon source
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 5 A shows SEM i mage of graphene grown under monolayer conditions (15 m in) followed by bilayers growth conditions (15 m in). The scale bar is 1 mm. …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Pressure | 0.001–1500 Torr | — |
Pressure |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,053,366Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 5 A shows SEM i mage of graphene grown under monolayer conditions (15 m in) followed by bilayers growth conditions (15 m in). The scale bar is 1 mm. …
FIG. 2B. [0014] FIGURE 3 sh ows optical photographs of graphene films transfe rr ed onto quartz substrates (-0.67 in2). The arrow begins at the monolayer …
FIG. 3. The graphene films became successively darker, suggesting that thicker films were grown with increasing P C H4. The thickness of the films was …
FIG. 4, both the I 2D and IG increas e as the thickness increases, while the relative ratio between the two peaks does not change, suggesting a relatively weak …
FIG. 5. The 2D peak of bilayer graphene can be fitted with 4 Lorentzian curves while the 2D peak in t n layer graphene can be fitted with 6 Lorentzian curves. 24 …
FIGS. 6G-I show high resolution TEM (HRTEM) of randomly chosen representative edges of bi-, t n -, and tetralayer graphene that shows two, three, or four …
FIGS. 7A-B) and HRTEM (
FIG. 8C.
FIG. 9). In
FIG. 10B) of a bilayer graphene film. [0022] FIGURE 11 shows electrical measurements of Be rn al-stacked bilayer graphene.
FIG. 11B shows a cross-sectional view of the bilayer graphene device. FIG. i C shows graphene elect n cal conductance as a function of top gate voltage V, at …
FIG. 12), which is considerably higher than the mob ili ty for solution-exfo li ated Be rn al bilayer graphene. [00104] Additional control expe n ments were …
FIG. 13A shows SEM i mage of bilayer graphene grown for 15 m in. The scale bar is 1 mm. The 6 Utili ty App li cation Atto rn ey Docket No. 11321-P₂₇₄US Rice …
FIG. 14C) of bilayer graphene grown for 30 m m are also shown. There was no change in thickness noted with the increased growth time. [0026] FIGURE 15 shows …
FIG. 15C) of graphene grown under monolayer conditions for 15 m m and then bilayer conditions for another 15 m in. There was no thickness change observed after …
FIG. 16. In this way, some of the seeds grow into graphene i slands, forming and extending synchronously rather than layer-by-layer. The i slands maintain …
FIG. 17C is a representative Raman spectrum of these bilayer graphene seeds and i slands, which shows the 7 Utili ty App li cation Atto rn ey Docket No. …
FIG. 18). 27 Utili ty App li cation Atto rn ey Docket No. 11321-P₂₇₄US Rice Tech ID No. 2013-037-02 [00107] Example 1.1. CVD Growth [00108] In a 4 8-inch-long …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of controllably forming Bernal-stacked graphene layers, wherein the method comprises: cleaning a surface of a catalyst; annealing the surface of the catalyst; applying a carbon source onto the cleaned and annealed surface of the catalyst in a reaction chamber; and growing the Bernal-stacked graphene layers on the surface of the catalyst in the reaction chamber, wherein the method further comprises controlling the number of formed Bernal-stacked graphene layers by controlling at least the following growth parameters: (a) a total pressure of the reaction chamber 1 wherein the controlling of the total pressure comprises ad j ustin g the total pressure; and (b) a ratio of reductive gas pressure to carbon source pressure in the reaction chamber, wherein the controlling of the ratio comprises maintaining the ratio at a fixed number, wherein an increase in the total pressure of the reaction chamber at the maintained ratio of reductive gas pressure to carbon source pressure in the reaction chamber increases the number of Bernal-stacked g raphene la y ers, and wherein a decrease in the total pressure of the reaction chamber at the maintained ratio of reductive gas pressure to carbon source pressure in the reaction chamber decreases the number of Bernal-stacked g raphene la y ers. Currently amended
The method of claim 1, further comprising a step of placing the reaction chamber under a stream of a reductive gas. Original
The method of claim 1, wherein the catalyst is selected from the group consisting of Ni, Co, Fe, Pt, Au, Al, Cr, Cu, Mg, Mn, Mo, Rh, Si, Ta, Ti, W, U, V, Zr, and combinations thereof. Previously presented
The method of claim 1, wherein the catalyst is a copper foil. Original
The method of claim 1, wherein the catalyst has a surface area ranging from about 1 cm 2 to about 10 m 2. Original
The method of claim 1, wherein cleaning the surface of the catalyst comprises electrochemical-polishing the surface of the catalyst. Original
The method of claim 1, wherein annealing the surface of the catalyst comprises thermal annealing. Original
The method of claim 1, wherein the applying of the carbon source occurs by chemical vapor deposition. Original
The method of claim 1, wherein the carbon source is selected from the group consisting of hydrocarbons, polymers, non-polymeric carbon sources, small molecules, organic compounds, fullerenes, fluorenes, carbon nanotubes, phenylene, ethylenes, sucrose, sugars, polysaccharides, carbohydrates, proteins, and combinations thereof. Original
The method of claim 1, wherein the carbon source is a hydrocarbon. Original
The method of claim 1, wherein the carbon source has a pressure ranging from about 0.2 Torr to about 30 Torr. Original
The method of claim 1, wherein the growing occurs at temperatures of at least about 1,000 °C. Original
The method of claim 1, wherein the growing occurs while the reaction chamber has a total pressure ranging from about 5 Torr to about 800 Torr. Original
The method of claim 1, wherein the growing occurs for less than about 15 minutes. Original
The method of claim 1, further comprising a step of terminating the growing step by cooling the surface of the catalyst. Previously presented
The method of claim 1, further comprising a step of transferring the formed Bernal-stacked graphene layers from the surface of the catalyst onto a substrate. Original
The method of claim 1, wherein the growing occurs from multiple growth centers, wherein the growth centers comprise multilayer graphene seeds, wherein the growth centers grow laterally and epitaxially, and wherein the growth centers merge seamlessly to form Bernal-stacked graphene layers. Original
The method of claim 1, wherein the Bernal-stacked graphene layers have from 2 to 10 Bernal-stacked graphene layers. Original
The method of claim 1, wherein the Bernal-stacked graphene layers have more than 10 Bern al-stacked graphene layers. Original
The method of claim 1, wherein the Bernal-stacked graphene layers are in polycrystalline form. Original
The method of claim 1, wherein the Bernal-stacked graphene layers have domain sizes ranging from about 1 p m to about 5 pm. Original
The method of claim 1, wherein the growth parameters further comprise one or more growth parameters selected from the group consisting of a reductive gas flow rate in the reaction chamber, growth temperature, growth time, a cooling rate of the surface of the catalyst after the growing step, and combinations thereof. Previously presented
The method of claim 1, wherein the controlling of the total pressure comprises adjusting the pressure of the carbon source in the reaction chamber, wherein an increase in the pressure of the carbon source increases the number of Bernal- stacked graphene layers, and wherein a decrease in the pressure of the carbon source decreases the number of Bernal- stacked graphene layers. Currently amended
The method of claim 1, wherein the controlling of the total pressure comprises adjusting the pressure of a reductive gas in the reaction chamber, wherein an increase in the pressure of the reductive gas increases the number of Bernal- stacked graphene layers, and wherein a decrease in the pressure of the reductive gas decreases the number of Bernal- stacked graphene layers. Currently amended
The method of claim 1, wherein the total pressure of the reaction chamber is controlled at a range from about 5 Torr to about 800 Torr. Previously presented
The method of claim 1, wherein the ratio of the reductive gas pressure to the carbon source pressure is maintained at about 28. Currently amended
Canceled
Canceled
Canceled
Canceled
A Bernal-stacked graphene film comprising a plurality of Bernal-stacked graphene layers, wherein the Bernal-stacked graphene layers are uniform in structure, and wherein the Bernal-stacked graphene layers are in polycrystalline form. Withdrawn
The Bernal-stacked graphene film of claim 38, wherein the Bernal-stacked graphene layers have domain sizes ranging from about 1 p m to about 5 pm. Withdrawn
The Bernal-stacked graphene film of claim 38, wherein the Bernal-stacked graphene film has from 2 to 10 Bernal-stacked graphene layers. Withdrawn
The Bernal-stacked graphene film of claim 38, wherein the Bernal-stacked graphene film has from 2 to 4 Bernal-stacked graphene layers. Withdrawn
The Bernal-stacked graphene film of claim 38, wherein the Bernal-stacked graphene film has 2 Bernal-stacked graphene layers. Withdrawn
The Bernal-stacked graphene film of claim 38, wherein the Bernal-stacked graphene film has more than 10 Bern al-stacked graphene layers. Withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
Bernal-stacked graphene film
Materials described outside the worked examples.
Bernal-stacked graphene
carbon source
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 5 A shows SEM i mage of graphene grown under monolayer conditions (15 m in) followed by bilayers growth conditions (15 m in). The scale bar is 1 mm. …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Pressure | 0.001–1500 Torr | — |
Pressure |
Related documents with shared materials, methods, properties, or citations.
H₂
metal catalyst (Ni, Co, Fe, Pt, Au, Al, Cr, Cu, Mg, Mn, Mo, Rh, Si, Ta, Ti, W, U, V, Zr)
copper foil
Cu
methane
CH₄
FIG. 1 5 A shows SEM i mage of graphene grown under monolayer conditions (15 m in) followed by bilayers growth conditions (15 m in). The scale bar is 1 mm. …
FIG. 2B. [0014] FIGURE 3 sh ows optical photographs of graphene films transfe rr ed onto quartz substrates (-0.67 in2). The arrow begins at the monolayer …
FIG. 3. The graphene films became successively darker, suggesting that thicker films were grown with increasing P C H4. The thickness of the films was …
FIG. 3. The graphene films became successively darker, suggesting that thicker films were grown with increasing P C H4. The thickness of the films was …
FIG. 4, both the I 2D and IG increas e as the thickness increases, while the relative ratio between the two peaks does not change, suggesting a relatively weak …
FIGS. 6G-I show high resolution TEM (HRTEM) of randomly chosen representative edges of bi-, t n -, and tetralayer graphene that shows two, three, or four …
FIG. 10B) of a bilayer graphene film. [0022] FIGURE 11 shows electrical measurements of Be rn al-stacked bilayer graphene.
FIG. 11B shows a cross-sectional view of the bilayer graphene device. FIG. i C shows graphene elect n cal conductance as a function of top gate voltage V, at …
FIG. 11B shows a cross-sectional view of the bilayer graphene device. FIG. i C shows graphene elect n cal conductance as a function of top gate voltage V, at …
FIG. 13A shows SEM i mage of bilayer graphene grown for 15 m in. The scale bar is 1 mm. The 6 Utili ty App li cation Atto rn ey Docket No. 11321-P₂₇₄US Rice …
FIG. 13A shows SEM i mage of bilayer graphene grown for 15 m in. The scale bar is 1 mm. The 6 Utili ty App li cation Atto rn ey Docket No. 11321-P₂₇₄US Rice …
FIG. 14C) of bilayer graphene grown for 30 m m are also shown. There was no change in thickness noted with the increased growth time. [0026] FIGURE 15 shows …
FIG. 14C) of bilayer graphene grown for 30 m m are also shown. There was no change in thickness noted with the increased growth time. [0026] FIGURE 15 shows …
FIG. 14C) of bilayer graphene grown for 30 m m are also shown. There was no change in thickness noted with the increased growth time. [0026] FIGURE 15 shows …
FIG. 15C) of graphene grown under monolayer conditions for 15 m m and then bilayer conditions for another 15 m in. There was no thickness change observed after …
FIG. 15C) of graphene grown under monolayer conditions for 15 m m and then bilayer conditions for another 15 m in. There was no thickness change observed after …
FIG. 16. In this way, some of the seeds grow into graphene i slands, forming and extending synchronously rather than layer-by-layer. The i slands maintain …
FIG. 17C is a representative Raman spectrum of these bilayer graphene seeds and i slands, which shows the 7 Utili ty App li cation Atto rn ey Docket No. …
FIG. 17C is a representative Raman spectrum of these bilayer graphene seeds and i slands, which shows the 7 Utili ty App li cation Atto rn ey Docket No. …
| — |
Duration | 60–36000 s | — |
Pressure | 0.2–30 Torr | — |
Duration | 2–15 minutes | — |
Pressure | 5–750 Torr | — |
Duration | ≤ 15 minutes | — |
Pressure | ≥ 1 mTorr | — |
Duration | ≥ 1 minute | — |
Pressure | ≥ 5 Torr | — |
Duration | ≥ 7 hours | — |
Temperature | ≥ 1 °C | — |
H₂
metal catalyst (Ni, Co, Fe, Pt, Au, Al, Cr, Cu, Mg, Mn, Mo, Rh, Si, Ta, Ti, W, U, V, Zr)
copper foil
Cu
methane
CH₄
FIG. 1 5 A shows SEM i mage of graphene grown under monolayer conditions (15 m in) followed by bilayers growth conditions (15 m in). The scale bar is 1 mm. …
FIG. 2B. [0014] FIGURE 3 sh ows optical photographs of graphene films transfe rr ed onto quartz substrates (-0.67 in2). The arrow begins at the monolayer …
FIG. 3. The graphene films became successively darker, suggesting that thicker films were grown with increasing P C H4. The thickness of the films was …
FIG. 3. The graphene films became successively darker, suggesting that thicker films were grown with increasing P C H4. The thickness of the films was …
FIG. 4, both the I 2D and IG increas e as the thickness increases, while the relative ratio between the two peaks does not change, suggesting a relatively weak …
FIGS. 6G-I show high resolution TEM (HRTEM) of randomly chosen representative edges of bi-, t n -, and tetralayer graphene that shows two, three, or four …
FIG. 10B) of a bilayer graphene film. [0022] FIGURE 11 shows electrical measurements of Be rn al-stacked bilayer graphene.
FIG. 11B shows a cross-sectional view of the bilayer graphene device. FIG. i C shows graphene elect n cal conductance as a function of top gate voltage V, at …
FIG. 11B shows a cross-sectional view of the bilayer graphene device. FIG. i C shows graphene elect n cal conductance as a function of top gate voltage V, at …
FIG. 13A shows SEM i mage of bilayer graphene grown for 15 m in. The scale bar is 1 mm. The 6 Utili ty App li cation Atto rn ey Docket No. 11321-P₂₇₄US Rice …
FIG. 13A shows SEM i mage of bilayer graphene grown for 15 m in. The scale bar is 1 mm. The 6 Utili ty App li cation Atto rn ey Docket No. 11321-P₂₇₄US Rice …
FIG. 14C) of bilayer graphene grown for 30 m m are also shown. There was no change in thickness noted with the increased growth time. [0026] FIGURE 15 shows …
FIG. 14C) of bilayer graphene grown for 30 m m are also shown. There was no change in thickness noted with the increased growth time. [0026] FIGURE 15 shows …
FIG. 14C) of bilayer graphene grown for 30 m m are also shown. There was no change in thickness noted with the increased growth time. [0026] FIGURE 15 shows …
FIG. 15C) of graphene grown under monolayer conditions for 15 m m and then bilayer conditions for another 15 m in. There was no thickness change observed after …
FIG. 15C) of graphene grown under monolayer conditions for 15 m m and then bilayer conditions for another 15 m in. There was no thickness change observed after …
FIG. 16. In this way, some of the seeds grow into graphene i slands, forming and extending synchronously rather than layer-by-layer. The i slands maintain …
FIG. 17C is a representative Raman spectrum of these bilayer graphene seeds and i slands, which shows the 7 Utili ty App li cation Atto rn ey Docket No. …
FIG. 17C is a representative Raman spectrum of these bilayer graphene seeds and i slands, which shows the 7 Utili ty App li cation Atto rn ey Docket No. …
| — |
Duration | 60–36000 s | — |
Pressure | 0.2–30 Torr | — |
Duration | 2–15 minutes | — |
Pressure | 5–750 Torr | — |
Duration | ≤ 15 minutes | — |
Pressure | ≥ 1 mTorr | — |
Duration | ≥ 1 minute | — |
Pressure | ≥ 5 Torr | — |
Duration | ≥ 7 hours | — |
Temperature | ≥ 1 °C | — |
H₂
metal catalyst (Ni, Co, Fe, Pt, Au, Al, Cr, Cu, Mg, Mn, Mo, Rh, Si, Ta, Ti, W, U, V, Zr)
copper foil
Cu
methane
CH₄
FIG. 1 5 A shows SEM i mage of graphene grown under monolayer conditions (15 m in) followed by bilayers growth conditions (15 m in). The scale bar is 1 mm. …
FIG. 2B. [0014] FIGURE 3 sh ows optical photographs of graphene films transfe rr ed onto quartz substrates (-0.67 in2). The arrow begins at the monolayer …
FIG. 3. The graphene films became successively darker, suggesting that thicker films were grown with increasing P C H4. The thickness of the films was …
FIG. 3. The graphene films became successively darker, suggesting that thicker films were grown with increasing P C H4. The thickness of the films was …
FIG. 4, both the I 2D and IG increas e as the thickness increases, while the relative ratio between the two peaks does not change, suggesting a relatively weak …
FIGS. 6G-I show high resolution TEM (HRTEM) of randomly chosen representative edges of bi-, t n -, and tetralayer graphene that shows two, three, or four …
FIG. 10B) of a bilayer graphene film. [0022] FIGURE 11 shows electrical measurements of Be rn al-stacked bilayer graphene.
FIG. 11B shows a cross-sectional view of the bilayer graphene device. FIG. i C shows graphene elect n cal conductance as a function of top gate voltage V, at …
FIG. 11B shows a cross-sectional view of the bilayer graphene device. FIG. i C shows graphene elect n cal conductance as a function of top gate voltage V, at …
FIG. 13A shows SEM i mage of bilayer graphene grown for 15 m in. The scale bar is 1 mm. The 6 Utili ty App li cation Atto rn ey Docket No. 11321-P₂₇₄US Rice …
FIG. 13A shows SEM i mage of bilayer graphene grown for 15 m in. The scale bar is 1 mm. The 6 Utili ty App li cation Atto rn ey Docket No. 11321-P₂₇₄US Rice …
FIG. 14C) of bilayer graphene grown for 30 m m are also shown. There was no change in thickness noted with the increased growth time. [0026] FIGURE 15 shows …
FIG. 14C) of bilayer graphene grown for 30 m m are also shown. There was no change in thickness noted with the increased growth time. [0026] FIGURE 15 shows …
FIG. 14C) of bilayer graphene grown for 30 m m are also shown. There was no change in thickness noted with the increased growth time. [0026] FIGURE 15 shows …
FIG. 15C) of graphene grown under monolayer conditions for 15 m m and then bilayer conditions for another 15 m in. There was no thickness change observed after …
FIG. 15C) of graphene grown under monolayer conditions for 15 m m and then bilayer conditions for another 15 m in. There was no thickness change observed after …
FIG. 16. In this way, some of the seeds grow into graphene i slands, forming and extending synchronously rather than layer-by-layer. The i slands maintain …
FIG. 17C is a representative Raman spectrum of these bilayer graphene seeds and i slands, which shows the 7 Utili ty App li cation Atto rn ey Docket No. …
FIG. 17C is a representative Raman spectrum of these bilayer graphene seeds and i slands, which shows the 7 Utili ty App li cation Atto rn ey Docket No. …
| — |
Duration | 60–36000 s | — |
Pressure | 0.2–30 Torr | — |
Duration | 2–15 minutes | — |
Pressure | 5–750 Torr | — |
Duration | ≤ 15 minutes | — |
Pressure | ≥ 1 mTorr | — |
Duration | ≥ 1 minute | — |
Pressure | ≥ 5 Torr | — |
Duration | ≥ 7 hours | — |
Temperature | ≥ 1 °C | — |
H₂
metal catalyst (Ni, Co, Fe, Pt, Au, Al, Cr, Cu, Mg, Mn, Mo, Rh, Si, Ta, Ti, W, U, V, Zr)
copper foil
Cu
methane
CH₄
FIG. 1 5 A shows SEM i mage of graphene grown under monolayer conditions (15 m in) followed by bilayers growth conditions (15 m in). The scale bar is 1 mm. …
FIG. 2B. [0014] FIGURE 3 sh ows optical photographs of graphene films transfe rr ed onto quartz substrates (-0.67 in2). The arrow begins at the monolayer …
FIG. 3. The graphene films became successively darker, suggesting that thicker films were grown with increasing P C H4. The thickness of the films was …
FIG. 3. The graphene films became successively darker, suggesting that thicker films were grown with increasing P C H4. The thickness of the films was …
FIG. 4, both the I 2D and IG increas e as the thickness increases, while the relative ratio between the two peaks does not change, suggesting a relatively weak …
FIGS. 6G-I show high resolution TEM (HRTEM) of randomly chosen representative edges of bi-, t n -, and tetralayer graphene that shows two, three, or four …
FIG. 10B) of a bilayer graphene film. [0022] FIGURE 11 shows electrical measurements of Be rn al-stacked bilayer graphene.
FIG. 11B shows a cross-sectional view of the bilayer graphene device. FIG. i C shows graphene elect n cal conductance as a function of top gate voltage V, at …
FIG. 11B shows a cross-sectional view of the bilayer graphene device. FIG. i C shows graphene elect n cal conductance as a function of top gate voltage V, at …
FIG. 13A shows SEM i mage of bilayer graphene grown for 15 m in. The scale bar is 1 mm. The 6 Utili ty App li cation Atto rn ey Docket No. 11321-P₂₇₄US Rice …
FIG. 13A shows SEM i mage of bilayer graphene grown for 15 m in. The scale bar is 1 mm. The 6 Utili ty App li cation Atto rn ey Docket No. 11321-P₂₇₄US Rice …
FIG. 14C) of bilayer graphene grown for 30 m m are also shown. There was no change in thickness noted with the increased growth time. [0026] FIGURE 15 shows …
FIG. 14C) of bilayer graphene grown for 30 m m are also shown. There was no change in thickness noted with the increased growth time. [0026] FIGURE 15 shows …
FIG. 14C) of bilayer graphene grown for 30 m m are also shown. There was no change in thickness noted with the increased growth time. [0026] FIGURE 15 shows …
FIG. 15C) of graphene grown under monolayer conditions for 15 m m and then bilayer conditions for another 15 m in. There was no thickness change observed after …
FIG. 15C) of graphene grown under monolayer conditions for 15 m m and then bilayer conditions for another 15 m in. There was no thickness change observed after …
FIG. 16. In this way, some of the seeds grow into graphene i slands, forming and extending synchronously rather than layer-by-layer. The i slands maintain …
FIG. 17C is a representative Raman spectrum of these bilayer graphene seeds and i slands, which shows the 7 Utili ty App li cation Atto rn ey Docket No. …
FIG. 17C is a representative Raman spectrum of these bilayer graphene seeds and i slands, which shows the 7 Utili ty App li cation Atto rn ey Docket No. …
| — |
Duration | 60–36000 s | — |
Pressure | 0.2–30 Torr | — |
Duration | 2–15 minutes | — |
Pressure | 5–750 Torr | — |
Duration | ≤ 15 minutes | — |
Pressure | ≥ 1 mTorr | — |
Duration | ≥ 1 minute | — |
Pressure | ≥ 5 Torr | — |
Duration | ≥ 7 hours | — |
Temperature | ≥ 1 °C | — |