TWO-DIMENSIONAL VERTICAL COMPOSITE LAMINATE INCLUDING GRAPHENE AND HEXAGONAL BORON NITRIDE AND METHOD OF FABRICATING SAME | Matter42 Literature
Patent
Atlas literature
Patent
US 12,571,129 B2
TWO-DIMENSIONAL VERTICAL COMPOSITE LAMINATE INCLUDING GRAPHENE AND HEXAGONAL BORON NITRIDE AND METHOD OF FABRICATING SAME
Cheol-Joo Kim, Seong-Jun Yang, Ju Hyun Jung
POSTECH RESEARCH AND BUSINESS DEVELOPMENT FOUNDATION, Pohang-si (KR)·Mar. 10, 2026·US
Drawings
Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1
FIG. 1 is a flowchart illustrating a method of fabricating a heterogeneous composite laminate according to one embodiment of the present disclosure;
FIG. 2
FIG. 2 is a diagram illustrating the sequence of processes for fabricating a heterogeneous composite laminate accord- ing to one embodiment of the present …
FIG. 3
FIG. 3 is a schematic diagram illustrating an assembly of graphene layers each having a predetermined twist angle θ from another, according to one embodiment …
FIG. 4
FIG. 4 is a diagram illustrating a germanium single crystal substrate with a vicinal plane, according to one embodiment of the present disclosure;
FIG. 5
FIG. 5B is a diagram illustrating LEED patterns of hexagonal boron nitride layers synthesized on vicinal plane germanium substrates cut in <100> and <111> …
FIG. 6
FIG. 6A is a diagram illustrating SEM images of hexago- nal boron nitride layers synthesized on vicinal plane germa- nium substrates cut in <100> and <111> …
FIG. 7
FIG. 7D show AFM images for the bottom surface of each 15 of the composite laminates one of which is prepared by a dry stacking process according to Example …
FIG. 8
FIG. 8A is a diagram illustrating absorption spectra of multilayer structures of graphene according to the number of stacked graphene layers according to …
FIG. 9
FIG. 9A is a schematic diagram of a graphene/hBN heterogeneous composite laminate according to Example 4-1, 9B is a laterally viewed STEM image of the …
FIG. 10
performance graph
FIG. 10C illustrates a two-down diffraction pattern of the laminate where NL=6 and θ1=10°. Experimental Example 6: J-V Curve (Current Density-Voltage …
FIG. 11
process chamber schematic
FIGS. 11E and 11F are diagrams illustrating the stacked structure of a chiral or achiral composite laminate with a plurality of twisting graphene layers. …
FIG. 12
FIG. 12A, the composite laminate may be used for the fabrication of photodetectors, polarizing films, transistors, and tunnel devices. The heterogeneous …
FIG. 13
FIG. 13A is a diagram illustrating an LEED pattern for the case where graphene layers are aligned in one direction (0°) B₂ and an LEED pattern for the case …
FIG. 14
FIG. 14D is a diagram illustrating an LEED pattern for the case where hexagonal boron nitride layers are aligned in two directions. DESCRIPTION OF THE …
Claims
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A composite laminate comprising: a first layer comprising a boron nitride layer comprising an atomic monolayer of hexagonal boron nitride (hBN); a second layer positioned on the first layer and comprising an atomic monolayer of graphene; and a metal layer, wherein the metal layer is disposed on the first layer so as to be opposite to the second layer.
The composite laminate according to claim 1, wherein the first layer and the second layer are stacked in a direction perpendicular to an in-layer direction.
The composite laminate according to claim 1, wherein the composite laminate is used to fabricate a photodetector, polarizing film, transistor, or tunnel device.
A vicinal plane germanium laminate comprising: a germanium (Ge) substrate having a vicinal plane (110) single crystalline surface; a graphene layer or hexagonal boron nitride layer formed on the vicinal plane (110) single crystalline surface of the Ge substrate; and a metal layer, B₂ wherein the metal layer is disposed on the graphene layer or hexagonal boron nitride layer so as to be opposite to the Ge substrate.
The vicinal plane germanium laminate according to claim 4, wherein the vicinal plane (110) single crystalline surface of the Ge substrate is formed by cutting a Ge substrate in <100> or <111> direction and then recrystal-lizing the resulting Ge substrate.
The vicinal plane germanium laminate according to claim 4, wherein single crystals of the graphene layer or hexagonal boron nitride layer have same orientation.
A method of fabricating a composite laminate, the method comprising: (a) forming a first layer comprising a first boron nitride layer comprising hexagonal boron nitride (hBN) or a first graphene layer comprising graphene on a first germanium (Ge) substrate; (b) forming a second layer comprising a second boron nitride layer comprising hexagonal boron nitride or a second graphene layer comprising graphene on a sec-ond germanium (Ge) substrate; (c) bringing a metal thin film of a release film coated with the metal thin film into contact with the first layer of the first Ge substrate, mechanically exfoliating the first layer from the first Ge layer, and transferring the exfoliated first layer onto the metal thin film of the release film; and (d) bringing the first layer transferred onto the metal thin film of the release film into contact with the second layer formed on the second Ge substrate, mechanically exfoliating the second layer from the second Ge substrate, and transferring the exfoliated second layer onto the first layer, thereby forming the composite laminate in which the second layer is disposed on the first layer.
8
Dependent← claim 7
The method according to claim 7, wherein the mechani-cally exfoliating is performed by utilizing a difference in the Van der Waals attraction.
10
Dependent← claim 7Ge
The method according to claim 7, wherein the Ge substrate has a Ge (110) single crystalline surface or a Ge (110) single crystalline surface with a vicinal plane.
12
Dependent← claim 7hBNgraphene
The method according to claim 7, wherein the first layer in step (a) or the second layer in step (b) are formed by chemical vapor deposition (CVD). ∗ ∗ ∗ ∗ ∗
Device structures
Layer stacks claimed or described, ordered top of device to substrate.
Additional fabrication and treatment steps described in the patent.
1
Cvd Growth
Step 1
Process details
note:CVD growth of hBN or graphene layer on Ge substrate
substrate:Ge (110) single crystalline surface or vicinal plane (110)
Materials:
Characterization
Measurements and analyses referenced in the patent, with their drawing references.
sem
SEM
FIG. 6A is a diagram illustrating SEM images of hexago- nal boron nitride layers synthesized on vicinal plane germa- nium substrates cut in <100> and <111> …
Performance values and ranges asserted in the specification or claims.
Property
Value
Material
Temperature
700–938 °C
—
Temperature
Cited prior art
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 3
US 2019/0055129 A12019/0055129 A1 2/2019 Dimitrakopoulos et al.
CN 103579407 ACN 103579407 A * 2/2014examiner
CN 104562195 ACN 104562195 A * 4/2015examiner
Cited non-patent literature · 3
Wafer-Scale Programmed Assembly of One-Atom-Thick Crystals. Seong-Jun Yang et al., “Wafer-Scale Programmed Assembly of One-Atom-Thick Crystals”, Nano Lett. 2022, 22, 1518-1524, Feb. 4, 2022.
Why these are connected
Related documents with shared materials, methods, properties, or citations.
TWO-DIMENSIONAL VERTICAL COMPOSITE LAMINATE INCLUDING GRAPHENE AND HEXAGONAL BORON NITRIDE AND METHOD OF FABRICATING SAME
Cheol-Joo Kim, Seong-Jun Yang, Ju Hyun Jung
POSTECH RESEARCH AND BUSINESS DEVELOPMENT FOUNDATION, Pohang-si (KR)·Mar. 10, 2026·US
Drawings
Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1
FIG. 1 is a flowchart illustrating a method of fabricating a heterogeneous composite laminate according to one embodiment of the present disclosure;
FIG. 2
FIG. 2 is a diagram illustrating the sequence of processes for fabricating a heterogeneous composite laminate accord- ing to one embodiment of the present …
FIG. 3
FIG. 3 is a schematic diagram illustrating an assembly of graphene layers each having a predetermined twist angle θ from another, according to one embodiment …
FIG. 4
FIG. 4 is a diagram illustrating a germanium single crystal substrate with a vicinal plane, according to one embodiment of the present disclosure;
FIG. 5
FIG. 5B is a diagram illustrating LEED patterns of hexagonal boron nitride layers synthesized on vicinal plane germanium substrates cut in <100> and <111> …
FIG. 6
FIG. 6A is a diagram illustrating SEM images of hexago- nal boron nitride layers synthesized on vicinal plane germa- nium substrates cut in <100> and <111> …
FIG. 7
FIG. 7D show AFM images for the bottom surface of each 15 of the composite laminates one of which is prepared by a dry stacking process according to Example …
FIG. 8
FIG. 8A is a diagram illustrating absorption spectra of multilayer structures of graphene according to the number of stacked graphene layers according to …
FIG. 9
FIG. 9A is a schematic diagram of a graphene/hBN heterogeneous composite laminate according to Example 4-1, 9B is a laterally viewed STEM image of the …
FIG. 10
performance graph
FIG. 10C illustrates a two-down diffraction pattern of the laminate where NL=6 and θ1=10°. Experimental Example 6: J-V Curve (Current Density-Voltage …
FIG. 11
process chamber schematic
FIGS. 11E and 11F are diagrams illustrating the stacked structure of a chiral or achiral composite laminate with a plurality of twisting graphene layers. …
FIG. 12
FIG. 12A, the composite laminate may be used for the fabrication of photodetectors, polarizing films, transistors, and tunnel devices. The heterogeneous …
FIG. 13
FIG. 13A is a diagram illustrating an LEED pattern for the case where graphene layers are aligned in one direction (0°) B₂ and an LEED pattern for the case …
FIG. 14
FIG. 14D is a diagram illustrating an LEED pattern for the case where hexagonal boron nitride layers are aligned in two directions. DESCRIPTION OF THE …
Claims
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A composite laminate comprising: a first layer comprising a boron nitride layer comprising an atomic monolayer of hexagonal boron nitride (hBN); a second layer positioned on the first layer and comprising an atomic monolayer of graphene; and a metal layer, wherein the metal layer is disposed on the first layer so as to be opposite to the second layer.
The composite laminate according to claim 1, wherein the first layer and the second layer are stacked in a direction perpendicular to an in-layer direction.
The composite laminate according to claim 1, wherein the composite laminate is used to fabricate a photodetector, polarizing film, transistor, or tunnel device.
A vicinal plane germanium laminate comprising: a germanium (Ge) substrate having a vicinal plane (110) single crystalline surface; a graphene layer or hexagonal boron nitride layer formed on the vicinal plane (110) single crystalline surface of the Ge substrate; and a metal layer, B₂ wherein the metal layer is disposed on the graphene layer or hexagonal boron nitride layer so as to be opposite to the Ge substrate.
The vicinal plane germanium laminate according to claim 4, wherein the vicinal plane (110) single crystalline surface of the Ge substrate is formed by cutting a Ge substrate in <100> or <111> direction and then recrystal-lizing the resulting Ge substrate.
The vicinal plane germanium laminate according to claim 4, wherein single crystals of the graphene layer or hexagonal boron nitride layer have same orientation.
A method of fabricating a composite laminate, the method comprising: (a) forming a first layer comprising a first boron nitride layer comprising hexagonal boron nitride (hBN) or a first graphene layer comprising graphene on a first germanium (Ge) substrate; (b) forming a second layer comprising a second boron nitride layer comprising hexagonal boron nitride or a second graphene layer comprising graphene on a sec-ond germanium (Ge) substrate; (c) bringing a metal thin film of a release film coated with the metal thin film into contact with the first layer of the first Ge substrate, mechanically exfoliating the first layer from the first Ge layer, and transferring the exfoliated first layer onto the metal thin film of the release film; and (d) bringing the first layer transferred onto the metal thin film of the release film into contact with the second layer formed on the second Ge substrate, mechanically exfoliating the second layer from the second Ge substrate, and transferring the exfoliated second layer onto the first layer, thereby forming the composite laminate in which the second layer is disposed on the first layer.
8
Dependent← claim 7
The method according to claim 7, wherein the mechani-cally exfoliating is performed by utilizing a difference in the Van der Waals attraction.
10
Dependent← claim 7Ge
The method according to claim 7, wherein the Ge substrate has a Ge (110) single crystalline surface or a Ge (110) single crystalline surface with a vicinal plane.
12
Dependent← claim 7hBNgraphene
The method according to claim 7, wherein the first layer in step (a) or the second layer in step (b) are formed by chemical vapor deposition (CVD). ∗ ∗ ∗ ∗ ∗
Device structures
Layer stacks claimed or described, ordered top of device to substrate.
Additional fabrication and treatment steps described in the patent.
1
Cvd Growth
Step 1
Process details
note:CVD growth of hBN or graphene layer on Ge substrate
substrate:Ge (110) single crystalline surface or vicinal plane (110)
Materials:
Characterization
Measurements and analyses referenced in the patent, with their drawing references.
sem
SEM
FIG. 6A is a diagram illustrating SEM images of hexago- nal boron nitride layers synthesized on vicinal plane germa- nium substrates cut in <100> and <111> …
Performance values and ranges asserted in the specification or claims.
Property
Value
Material
Temperature
700–938 °C
—
Temperature
Cited prior art
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 3
US 2019/0055129 A12019/0055129 A1 2/2019 Dimitrakopoulos et al.
CN 103579407 ACN 103579407 A * 2/2014examiner
CN 104562195 ACN 104562195 A * 4/2015examiner
Cited non-patent literature · 3
Wafer-Scale Programmed Assembly of One-Atom-Thick Crystals. Seong-Jun Yang et al., “Wafer-Scale Programmed Assembly of One-Atom-Thick Crystals”, Nano Lett. 2022, 22, 1518-1524, Feb. 4, 2022.
Why these are connected
Related documents with shared materials, methods, properties, or citations.
TWO-DIMENSIONAL VERTICAL COMPOSITE LAMINATE INCLUDING GRAPHENE AND HEXAGONAL BORON NITRIDE AND METHOD OF FABRICATING SAME
Cheol-Joo Kim, Seong-Jun Yang, Ju Hyun Jung
POSTECH RESEARCH AND BUSINESS DEVELOPMENT FOUNDATION, Pohang-si (KR)·Mar. 10, 2026·US
Drawings
Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1
FIG. 1 is a flowchart illustrating a method of fabricating a heterogeneous composite laminate according to one embodiment of the present disclosure;
FIG. 2
FIG. 2 is a diagram illustrating the sequence of processes for fabricating a heterogeneous composite laminate accord- ing to one embodiment of the present …
FIG. 3
FIG. 3 is a schematic diagram illustrating an assembly of graphene layers each having a predetermined twist angle θ from another, according to one embodiment …
FIG. 4
FIG. 4 is a diagram illustrating a germanium single crystal substrate with a vicinal plane, according to one embodiment of the present disclosure;
FIG. 5
FIG. 5B is a diagram illustrating LEED patterns of hexagonal boron nitride layers synthesized on vicinal plane germanium substrates cut in <100> and <111> …
FIG. 6
FIG. 6A is a diagram illustrating SEM images of hexago- nal boron nitride layers synthesized on vicinal plane germa- nium substrates cut in <100> and <111> …
FIG. 7
FIG. 7D show AFM images for the bottom surface of each 15 of the composite laminates one of which is prepared by a dry stacking process according to Example …
FIG. 8
FIG. 8A is a diagram illustrating absorption spectra of multilayer structures of graphene according to the number of stacked graphene layers according to …
FIG. 9
FIG. 9A is a schematic diagram of a graphene/hBN heterogeneous composite laminate according to Example 4-1, 9B is a laterally viewed STEM image of the …
FIG. 10
performance graph
FIG. 10C illustrates a two-down diffraction pattern of the laminate where NL=6 and θ1=10°. Experimental Example 6: J-V Curve (Current Density-Voltage …
FIG. 11
process chamber schematic
FIGS. 11E and 11F are diagrams illustrating the stacked structure of a chiral or achiral composite laminate with a plurality of twisting graphene layers. …
FIG. 12
FIG. 12A, the composite laminate may be used for the fabrication of photodetectors, polarizing films, transistors, and tunnel devices. The heterogeneous …
FIG. 13
FIG. 13A is a diagram illustrating an LEED pattern for the case where graphene layers are aligned in one direction (0°) B₂ and an LEED pattern for the case …
FIG. 14
FIG. 14D is a diagram illustrating an LEED pattern for the case where hexagonal boron nitride layers are aligned in two directions. DESCRIPTION OF THE …
Claims
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A composite laminate comprising: a first layer comprising a boron nitride layer comprising an atomic monolayer of hexagonal boron nitride (hBN); a second layer positioned on the first layer and comprising an atomic monolayer of graphene; and a metal layer, wherein the metal layer is disposed on the first layer so as to be opposite to the second layer.
The composite laminate according to claim 1, wherein the first layer and the second layer are stacked in a direction perpendicular to an in-layer direction.
The composite laminate according to claim 1, wherein the composite laminate is used to fabricate a photodetector, polarizing film, transistor, or tunnel device.
A vicinal plane germanium laminate comprising: a germanium (Ge) substrate having a vicinal plane (110) single crystalline surface; a graphene layer or hexagonal boron nitride layer formed on the vicinal plane (110) single crystalline surface of the Ge substrate; and a metal layer, B₂ wherein the metal layer is disposed on the graphene layer or hexagonal boron nitride layer so as to be opposite to the Ge substrate.
The vicinal plane germanium laminate according to claim 4, wherein the vicinal plane (110) single crystalline surface of the Ge substrate is formed by cutting a Ge substrate in <100> or <111> direction and then recrystal-lizing the resulting Ge substrate.
The vicinal plane germanium laminate according to claim 4, wherein single crystals of the graphene layer or hexagonal boron nitride layer have same orientation.
A method of fabricating a composite laminate, the method comprising: (a) forming a first layer comprising a first boron nitride layer comprising hexagonal boron nitride (hBN) or a first graphene layer comprising graphene on a first germanium (Ge) substrate; (b) forming a second layer comprising a second boron nitride layer comprising hexagonal boron nitride or a second graphene layer comprising graphene on a sec-ond germanium (Ge) substrate; (c) bringing a metal thin film of a release film coated with the metal thin film into contact with the first layer of the first Ge substrate, mechanically exfoliating the first layer from the first Ge layer, and transferring the exfoliated first layer onto the metal thin film of the release film; and (d) bringing the first layer transferred onto the metal thin film of the release film into contact with the second layer formed on the second Ge substrate, mechanically exfoliating the second layer from the second Ge substrate, and transferring the exfoliated second layer onto the first layer, thereby forming the composite laminate in which the second layer is disposed on the first layer.
8
Dependent← claim 7
The method according to claim 7, wherein the mechani-cally exfoliating is performed by utilizing a difference in the Van der Waals attraction.
10
Dependent← claim 7Ge
The method according to claim 7, wherein the Ge substrate has a Ge (110) single crystalline surface or a Ge (110) single crystalline surface with a vicinal plane.
12
Dependent← claim 7hBNgraphene
The method according to claim 7, wherein the first layer in step (a) or the second layer in step (b) are formed by chemical vapor deposition (CVD). ∗ ∗ ∗ ∗ ∗
Device structures
Layer stacks claimed or described, ordered top of device to substrate.
Additional fabrication and treatment steps described in the patent.
1
Cvd Growth
Step 1
Process details
note:CVD growth of hBN or graphene layer on Ge substrate
substrate:Ge (110) single crystalline surface or vicinal plane (110)
Materials:
Characterization
Measurements and analyses referenced in the patent, with their drawing references.
sem
SEM
FIG. 6A is a diagram illustrating SEM images of hexago- nal boron nitride layers synthesized on vicinal plane germa- nium substrates cut in <100> and <111> …
Performance values and ranges asserted in the specification or claims.
Property
Value
Material
Temperature
700–938 °C
—
Temperature
Cited prior art
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 3
US 2019/0055129 A12019/0055129 A1 2/2019 Dimitrakopoulos et al.
CN 103579407 ACN 103579407 A * 2/2014examiner
CN 104562195 ACN 104562195 A * 4/2015examiner
Cited non-patent literature · 3
Wafer-Scale Programmed Assembly of One-Atom-Thick Crystals. Seong-Jun Yang et al., “Wafer-Scale Programmed Assembly of One-Atom-Thick Crystals”, Nano Lett. 2022, 22, 1518-1524, Feb. 4, 2022.
Why these are connected
Related documents with shared materials, methods, properties, or citations.
TWO-DIMENSIONAL VERTICAL COMPOSITE LAMINATE INCLUDING GRAPHENE AND HEXAGONAL BORON NITRIDE AND METHOD OF FABRICATING SAME
Cheol-Joo Kim, Seong-Jun Yang, Ju Hyun Jung
POSTECH RESEARCH AND BUSINESS DEVELOPMENT FOUNDATION, Pohang-si (KR)·Mar. 10, 2026·US
Drawings
Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1
FIG. 1 is a flowchart illustrating a method of fabricating a heterogeneous composite laminate according to one embodiment of the present disclosure;
FIG. 2
FIG. 2 is a diagram illustrating the sequence of processes for fabricating a heterogeneous composite laminate accord- ing to one embodiment of the present …
FIG. 3
FIG. 3 is a schematic diagram illustrating an assembly of graphene layers each having a predetermined twist angle θ from another, according to one embodiment …
FIG. 4
FIG. 4 is a diagram illustrating a germanium single crystal substrate with a vicinal plane, according to one embodiment of the present disclosure;
FIG. 5
FIG. 5B is a diagram illustrating LEED patterns of hexagonal boron nitride layers synthesized on vicinal plane germanium substrates cut in <100> and <111> …
FIG. 6
FIG. 6A is a diagram illustrating SEM images of hexago- nal boron nitride layers synthesized on vicinal plane germa- nium substrates cut in <100> and <111> …
FIG. 7
FIG. 7D show AFM images for the bottom surface of each 15 of the composite laminates one of which is prepared by a dry stacking process according to Example …
FIG. 8
FIG. 8A is a diagram illustrating absorption spectra of multilayer structures of graphene according to the number of stacked graphene layers according to …
FIG. 9
FIG. 9A is a schematic diagram of a graphene/hBN heterogeneous composite laminate according to Example 4-1, 9B is a laterally viewed STEM image of the …
FIG. 10
performance graph
FIG. 10C illustrates a two-down diffraction pattern of the laminate where NL=6 and θ1=10°. Experimental Example 6: J-V Curve (Current Density-Voltage …
FIG. 11
process chamber schematic
FIGS. 11E and 11F are diagrams illustrating the stacked structure of a chiral or achiral composite laminate with a plurality of twisting graphene layers. …
FIG. 12
FIG. 12A, the composite laminate may be used for the fabrication of photodetectors, polarizing films, transistors, and tunnel devices. The heterogeneous …
FIG. 13
FIG. 13A is a diagram illustrating an LEED pattern for the case where graphene layers are aligned in one direction (0°) B₂ and an LEED pattern for the case …
FIG. 14
FIG. 14D is a diagram illustrating an LEED pattern for the case where hexagonal boron nitride layers are aligned in two directions. DESCRIPTION OF THE …
Claims
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A composite laminate comprising: a first layer comprising a boron nitride layer comprising an atomic monolayer of hexagonal boron nitride (hBN); a second layer positioned on the first layer and comprising an atomic monolayer of graphene; and a metal layer, wherein the metal layer is disposed on the first layer so as to be opposite to the second layer.
The composite laminate according to claim 1, wherein the first layer and the second layer are stacked in a direction perpendicular to an in-layer direction.
The composite laminate according to claim 1, wherein the composite laminate is used to fabricate a photodetector, polarizing film, transistor, or tunnel device.
A vicinal plane germanium laminate comprising: a germanium (Ge) substrate having a vicinal plane (110) single crystalline surface; a graphene layer or hexagonal boron nitride layer formed on the vicinal plane (110) single crystalline surface of the Ge substrate; and a metal layer, B₂ wherein the metal layer is disposed on the graphene layer or hexagonal boron nitride layer so as to be opposite to the Ge substrate.
The vicinal plane germanium laminate according to claim 4, wherein the vicinal plane (110) single crystalline surface of the Ge substrate is formed by cutting a Ge substrate in <100> or <111> direction and then recrystal-lizing the resulting Ge substrate.
The vicinal plane germanium laminate according to claim 4, wherein single crystals of the graphene layer or hexagonal boron nitride layer have same orientation.
A method of fabricating a composite laminate, the method comprising: (a) forming a first layer comprising a first boron nitride layer comprising hexagonal boron nitride (hBN) or a first graphene layer comprising graphene on a first germanium (Ge) substrate; (b) forming a second layer comprising a second boron nitride layer comprising hexagonal boron nitride or a second graphene layer comprising graphene on a sec-ond germanium (Ge) substrate; (c) bringing a metal thin film of a release film coated with the metal thin film into contact with the first layer of the first Ge substrate, mechanically exfoliating the first layer from the first Ge layer, and transferring the exfoliated first layer onto the metal thin film of the release film; and (d) bringing the first layer transferred onto the metal thin film of the release film into contact with the second layer formed on the second Ge substrate, mechanically exfoliating the second layer from the second Ge substrate, and transferring the exfoliated second layer onto the first layer, thereby forming the composite laminate in which the second layer is disposed on the first layer.
8
Dependent← claim 7
The method according to claim 7, wherein the mechani-cally exfoliating is performed by utilizing a difference in the Van der Waals attraction.
10
Dependent← claim 7Ge
The method according to claim 7, wherein the Ge substrate has a Ge (110) single crystalline surface or a Ge (110) single crystalline surface with a vicinal plane.
12
Dependent← claim 7hBNgraphene
The method according to claim 7, wherein the first layer in step (a) or the second layer in step (b) are formed by chemical vapor deposition (CVD). ∗ ∗ ∗ ∗ ∗
Device structures
Layer stacks claimed or described, ordered top of device to substrate.
Additional fabrication and treatment steps described in the patent.
1
Cvd Growth
Step 1
Process details
note:CVD growth of hBN or graphene layer on Ge substrate
substrate:Ge (110) single crystalline surface or vicinal plane (110)
Materials:
Characterization
Measurements and analyses referenced in the patent, with their drawing references.
sem
SEM
FIG. 6A is a diagram illustrating SEM images of hexago- nal boron nitride layers synthesized on vicinal plane germa- nium substrates cut in <100> and <111> …
Performance values and ranges asserted in the specification or claims.
Property
Value
Material
Temperature
700–938 °C
—
Temperature
Cited prior art
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 3
US 2019/0055129 A12019/0055129 A1 2/2019 Dimitrakopoulos et al.
CN 103579407 ACN 103579407 A * 2/2014examiner
CN 104562195 ACN 104562195 A * 4/2015examiner
Cited non-patent literature · 3
Wafer-Scale Programmed Assembly of One-Atom-Thick Crystals. Seong-Jun Yang et al., “Wafer-Scale Programmed Assembly of One-Atom-Thick Crystals”, Nano Lett. 2022, 22, 1518-1524, Feb. 4, 2022.
Why these are connected
Related documents with shared materials, methods, properties, or citations.
steps:Metal thin film of release film contacts first layer on Ge substrate; first layer mechanically exfoliated from Ge substrate and transferred onto metal thin film; then brought into contact with second layer on second Ge substrate; second layer exfoliated and transferred onto first layer to form composite laminate
mechanism:Van der Waals attraction difference
Materials:hBNgraphenemetal layerGe
3
Substrate Preparation
Step 3
Process details
method:Cutting Ge substrate in <100> or <111> direction then recrystallizing to form vicinal plane (110) single crystalline surface
Materials:Ge
raman spectroscopy
Raman Spectroscopy
FIG. 7D show AFM images for the bottom surface of each 15 of the composite laminates one of which is prepared by a dry stacking process according to Example …
FIG. 7D show AFM images for the bottom surface of each 15 of the composite laminates one of which is prepared by a dry stacking process according to Example …
FIG. 7D show AFM images for the bottom surface of each 15 of the composite laminates one of which is prepared by a dry stacking process according to Example …
FIG. 8A is a diagram illustrating absorption spectra of multilayer structures of graphene according to the number of stacked graphene layers according to …
FIG. 9A is a schematic diagram of a graphene/hBN heterogeneous composite laminate according to Example 4-1, 9B is a laterally viewed STEM image of the …
FIG. 9A is a schematic diagram of a graphene/hBN heterogeneous composite laminate according to Example 4-1, 9B is a laterally viewed STEM image of the …
FIG. 10C illustrates a two-down diffraction pattern of the laminate where NL=6 and θ1=10°. Experimental Example 6: J-V Curve (Current Density-Voltage …
FIG. 10C illustrates a two-down diffraction pattern of the laminate where NL=6 and θ1=10°. Experimental Example 6: J-V Curve (Current Density-Voltage …
FIGS. 11E and 11F are diagrams illustrating the stacked structure of a chiral or achiral composite laminate with a plurality of twisting graphene layers. …
FIG. 12A, the composite laminate may be used for the fabrication of photodetectors, polarizing films, transistors, and tunnel devices. The heterogeneous …
Wafer-scale layer-by-layer assembly of one-atom-thick crystals. Technology, Gordon Research Conference, Jun. 12-17, 2022, South- ern New Hampshire University. Seong-Jun Yang et al., “Wafer-scale layer-by-layer assembly of one-atom-thick crystals”, The 9th Korean Symposium on Graphene and 2D Materials, Jul. 11-12, 2022, Hanhwa Resort Haeundae. Cheol-Joo Kim, “Grain boundary engineering in two-dimensional materials”, Department of Chemical Engineering, Pohang Univer- sity of Science and Technology, Dec. 27, 2022.
Substrate Engineering for CVD Growth of Single Crystal Graphene. KIPO, Office Action of KR 10-2023-0128214 dated Sep. 29, 2025, total 15 pages. Ming Huang et al., “Substrate Engineering for CVD Growth of Single Crystal Graphene”, Small Methods, vol. 5, Issue 5, 2001213, May 12, 2021, total 29 pages.
steps:Metal thin film of release film contacts first layer on Ge substrate; first layer mechanically exfoliated from Ge substrate and transferred onto metal thin film; then brought into contact with second layer on second Ge substrate; second layer exfoliated and transferred onto first layer to form composite laminate
mechanism:Van der Waals attraction difference
Materials:hBNgraphenemetal layerGe
3
Substrate Preparation
Step 3
Process details
method:Cutting Ge substrate in <100> or <111> direction then recrystallizing to form vicinal plane (110) single crystalline surface
Materials:Ge
raman spectroscopy
Raman Spectroscopy
FIG. 7D show AFM images for the bottom surface of each 15 of the composite laminates one of which is prepared by a dry stacking process according to Example …
FIG. 7D show AFM images for the bottom surface of each 15 of the composite laminates one of which is prepared by a dry stacking process according to Example …
FIG. 7D show AFM images for the bottom surface of each 15 of the composite laminates one of which is prepared by a dry stacking process according to Example …
FIG. 8A is a diagram illustrating absorption spectra of multilayer structures of graphene according to the number of stacked graphene layers according to …
FIG. 9A is a schematic diagram of a graphene/hBN heterogeneous composite laminate according to Example 4-1, 9B is a laterally viewed STEM image of the …
FIG. 9A is a schematic diagram of a graphene/hBN heterogeneous composite laminate according to Example 4-1, 9B is a laterally viewed STEM image of the …
FIG. 10C illustrates a two-down diffraction pattern of the laminate where NL=6 and θ1=10°. Experimental Example 6: J-V Curve (Current Density-Voltage …
FIG. 10C illustrates a two-down diffraction pattern of the laminate where NL=6 and θ1=10°. Experimental Example 6: J-V Curve (Current Density-Voltage …
FIGS. 11E and 11F are diagrams illustrating the stacked structure of a chiral or achiral composite laminate with a plurality of twisting graphene layers. …
FIG. 12A, the composite laminate may be used for the fabrication of photodetectors, polarizing films, transistors, and tunnel devices. The heterogeneous …
Wafer-scale layer-by-layer assembly of one-atom-thick crystals. Technology, Gordon Research Conference, Jun. 12-17, 2022, South- ern New Hampshire University. Seong-Jun Yang et al., “Wafer-scale layer-by-layer assembly of one-atom-thick crystals”, The 9th Korean Symposium on Graphene and 2D Materials, Jul. 11-12, 2022, Hanhwa Resort Haeundae. Cheol-Joo Kim, “Grain boundary engineering in two-dimensional materials”, Department of Chemical Engineering, Pohang Univer- sity of Science and Technology, Dec. 27, 2022.
Substrate Engineering for CVD Growth of Single Crystal Graphene. KIPO, Office Action of KR 10-2023-0128214 dated Sep. 29, 2025, total 15 pages. Ming Huang et al., “Substrate Engineering for CVD Growth of Single Crystal Graphene”, Small Methods, vol. 5, Issue 5, 2001213, May 12, 2021, total 29 pages.
steps:Metal thin film of release film contacts first layer on Ge substrate; first layer mechanically exfoliated from Ge substrate and transferred onto metal thin film; then brought into contact with second layer on second Ge substrate; second layer exfoliated and transferred onto first layer to form composite laminate
mechanism:Van der Waals attraction difference
Materials:hBNgraphenemetal layerGe
3
Substrate Preparation
Step 3
Process details
method:Cutting Ge substrate in <100> or <111> direction then recrystallizing to form vicinal plane (110) single crystalline surface
Materials:Ge
raman spectroscopy
Raman Spectroscopy
FIG. 7D show AFM images for the bottom surface of each 15 of the composite laminates one of which is prepared by a dry stacking process according to Example …
FIG. 7D show AFM images for the bottom surface of each 15 of the composite laminates one of which is prepared by a dry stacking process according to Example …
FIG. 7D show AFM images for the bottom surface of each 15 of the composite laminates one of which is prepared by a dry stacking process according to Example …
FIG. 8A is a diagram illustrating absorption spectra of multilayer structures of graphene according to the number of stacked graphene layers according to …
FIG. 9A is a schematic diagram of a graphene/hBN heterogeneous composite laminate according to Example 4-1, 9B is a laterally viewed STEM image of the …
FIG. 9A is a schematic diagram of a graphene/hBN heterogeneous composite laminate according to Example 4-1, 9B is a laterally viewed STEM image of the …
FIG. 10C illustrates a two-down diffraction pattern of the laminate where NL=6 and θ1=10°. Experimental Example 6: J-V Curve (Current Density-Voltage …
FIG. 10C illustrates a two-down diffraction pattern of the laminate where NL=6 and θ1=10°. Experimental Example 6: J-V Curve (Current Density-Voltage …
FIGS. 11E and 11F are diagrams illustrating the stacked structure of a chiral or achiral composite laminate with a plurality of twisting graphene layers. …
FIG. 12A, the composite laminate may be used for the fabrication of photodetectors, polarizing films, transistors, and tunnel devices. The heterogeneous …
Wafer-scale layer-by-layer assembly of one-atom-thick crystals. Technology, Gordon Research Conference, Jun. 12-17, 2022, South- ern New Hampshire University. Seong-Jun Yang et al., “Wafer-scale layer-by-layer assembly of one-atom-thick crystals”, The 9th Korean Symposium on Graphene and 2D Materials, Jul. 11-12, 2022, Hanhwa Resort Haeundae. Cheol-Joo Kim, “Grain boundary engineering in two-dimensional materials”, Department of Chemical Engineering, Pohang Univer- sity of Science and Technology, Dec. 27, 2022.
Substrate Engineering for CVD Growth of Single Crystal Graphene. KIPO, Office Action of KR 10-2023-0128214 dated Sep. 29, 2025, total 15 pages. Ming Huang et al., “Substrate Engineering for CVD Growth of Single Crystal Graphene”, Small Methods, vol. 5, Issue 5, 2001213, May 12, 2021, total 29 pages.
steps:Metal thin film of release film contacts first layer on Ge substrate; first layer mechanically exfoliated from Ge substrate and transferred onto metal thin film; then brought into contact with second layer on second Ge substrate; second layer exfoliated and transferred onto first layer to form composite laminate
mechanism:Van der Waals attraction difference
Materials:hBNgraphenemetal layerGe
3
Substrate Preparation
Step 3
Process details
method:Cutting Ge substrate in <100> or <111> direction then recrystallizing to form vicinal plane (110) single crystalline surface
Materials:Ge
raman spectroscopy
Raman Spectroscopy
FIG. 7D show AFM images for the bottom surface of each 15 of the composite laminates one of which is prepared by a dry stacking process according to Example …
FIG. 7D show AFM images for the bottom surface of each 15 of the composite laminates one of which is prepared by a dry stacking process according to Example …
FIG. 7D show AFM images for the bottom surface of each 15 of the composite laminates one of which is prepared by a dry stacking process according to Example …
FIG. 8A is a diagram illustrating absorption spectra of multilayer structures of graphene according to the number of stacked graphene layers according to …
FIG. 9A is a schematic diagram of a graphene/hBN heterogeneous composite laminate according to Example 4-1, 9B is a laterally viewed STEM image of the …
FIG. 9A is a schematic diagram of a graphene/hBN heterogeneous composite laminate according to Example 4-1, 9B is a laterally viewed STEM image of the …
FIG. 10C illustrates a two-down diffraction pattern of the laminate where NL=6 and θ1=10°. Experimental Example 6: J-V Curve (Current Density-Voltage …
FIG. 10C illustrates a two-down diffraction pattern of the laminate where NL=6 and θ1=10°. Experimental Example 6: J-V Curve (Current Density-Voltage …
FIGS. 11E and 11F are diagrams illustrating the stacked structure of a chiral or achiral composite laminate with a plurality of twisting graphene layers. …
FIG. 12A, the composite laminate may be used for the fabrication of photodetectors, polarizing films, transistors, and tunnel devices. The heterogeneous …
Wafer-scale layer-by-layer assembly of one-atom-thick crystals. Technology, Gordon Research Conference, Jun. 12-17, 2022, South- ern New Hampshire University. Seong-Jun Yang et al., “Wafer-scale layer-by-layer assembly of one-atom-thick crystals”, The 9th Korean Symposium on Graphene and 2D Materials, Jul. 11-12, 2022, Hanhwa Resort Haeundae. Cheol-Joo Kim, “Grain boundary engineering in two-dimensional materials”, Department of Chemical Engineering, Pohang Univer- sity of Science and Technology, Dec. 27, 2022.
Substrate Engineering for CVD Growth of Single Crystal Graphene. KIPO, Office Action of KR 10-2023-0128214 dated Sep. 29, 2025, total 15 pages. Ming Huang et al., “Substrate Engineering for CVD Growth of Single Crystal Graphene”, Small Methods, vol. 5, Issue 5, 2001213, May 12, 2021, total 29 pages.