Patent
US 8,790,775HEXAGONAL BORON NITRIDE SHEET, METHOD OF PREPARING THE HEXAGONAL BORON NITRIDE SHEET, AND ELECTRONIC DEVICE INCLUDING THE HEXAGONAL BORON NITRIDE SHEET
Sang-Woo KIM
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 8,790,775Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic view of an embodiment of a field effect transistor (FET); [0038]
FIG. 2 is a schematic view of another embodiment of a FET; [0039]
FIG. 3 is a schematic diagram illustrating an embodiment of a chemical vapor deposition (CVD) process; [0040]
FIG. 4 is an optical surface image of a copper foil before a first thermal treatment in
FIG. 5 is an optical surface image of the copper foil after the first thermal treatment in Example 1; [0042]
FIG. 6. Numerically, the surface roughness was reduced from about 25.8 nm to about 7.4 nm. [00160] The copper foil of
FIG. 7 is an AFM image of the copper foil after the first thermal treatment in Example 1; [0044]
FIG. 8 is an AFM image of the copper foil after the first thermal treatment and chemical polishing in Example 1; [0045]
FIGS. 9, 10 and 11 are optical surface images of h-BN sheets of Comparative Example 1, and Examples 1 and 2, respectively. [00163] Referring to
FIG. 10 is an optical surface image of an h-BN sheet obtained in Comparative Example 2; [0047]
FIG. 11 is an optical surface image of an h-BN sheet obtained in Example 1; [0048]
FIG. 12 is graph of intensity (arbitrary units, a.u.) versus wave number (inverse centimeters, cm-) and is a Raman spectrum of the h-BN sheet obtained in …
FIG. 13 is graph of intensity (arbitrary units, a.u.) versus wave number (inverse centimeters, cm-) and is a Raman spectrum of the h-BN sheet obtained in …
FIG. 14 indicates a percentage of the other components excluding h-BN. This indicates that the h-BN sheet of Example 1 had a purity of about 70.0%. [00170] As …
FIG. 15, the h-BN sheet of Example 1 was found to include 6 layers with an interlayer distance of about 3.46 Angstroms (A). Example 3 [00173] A graphene-based …
FIG. 16. [00174] The PMMA-coated h-BN sheet 12 of Example 1 was transferred onto silicon (n-Si)/silica (Si O 2) substrates 13 and 14 having a thickness of …
FIG. 17, the FET structure of Example 3 manufactured using the h-BN sheet was found to have an on-off ratio which was two or more times greater than an on-off …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A hexagonal boron nitride sheet having: a two-dimensional planar structure with a sp 2 B-N covalent bond; and a Van der Waals bond between boron-nitrogen layers, a root mn sqaesrae r:outghess of aboutt 2 nianomfeters o r: less; an d length of abut I millimete r or create w herein the hexagonal boron nitride sheet comprises hexagonal boron nitride with a purity of about 70 % or greater, when determined by Raman spectroscopy.
The hexagonal boron nitride sheet of claim 1, wherein the hexagonal boron nitride sheet comprises from 1 to about 100 boron-nitrogen layers.
The hexagonal boron nitride sheet of claim 1, wherein the hexagonal boron nitride sheet co es hexagonal boron nitride with a p ur ity of abot 70% or g re ate r, when deter d by Raman specosopyhas a root mean square surface roughness of about 2 nanometers or less, and a length of about 1 millimeter or greater.
The hexagonal boron nitride sheet of claim 1, wherein the hexagonal boron nitride sheet has a peak at 1,367 inverse centimeters with a f u ll width at half maximum of about 17.0 inverse centimeters or less in a Raman spectrum.
A stacked structure comprising: the hexagonal boron nitride sheet of claim 1; and graphene.
A method of preparing a hexagonal boron nitride sheet, the method comprising: preparing a metal catalyst in sheet form; first thermally treating the metal catalyst to increase a grain size of the metal catalyst; polishing a surface of the metal catalyst in sheet form af t er the first thermal treatment; and 2 RE₂ 0 111 0 5181US O SI -40549-US YPL 1 186US Application No. 13/705,700 Response dated: second thermally treating and contacting the first thermally treated metal catalyst with a nitrogen source and a boron source to form the hexagonal boron nitride sheet.
The method of claim 5, wherein a mean grain area of the metal catalyst in sheet form af t er the first thermal treatment has a mean increase of about at least 100% or greater than a mean grain area of the metal catalyst before the first thermal treatment.
The method of claim 5, wherein the metal catalyst in sheet form af t er the first thermal treatment has a mean grain area of about 1 square micrometer or greater.
The method of claim 5, wherein the metal catalyst in sheet form af t er the first thermal treatment has a root mean square surface roughness of about 7 nanometers or less.
The method of claim 5, wherein the first thermal treatment is performed at a temperature of about a lower temperature to about an upper temperature, wherein the lower temperature is according to Equation 1, Equation 1 lower temperature = (melting point of the metal catalyst X 0.60), and the upper temperature is according to Equation 2, Equation 2 upper temperature = (melting point of the metal catalyst X 0.97) °C.
The method of claim 5, wherein the hexagonal boron nitride sheet has a length of about 1 millimeter or greater.
The method of claim 5, wherein the nitrogen source and the boron source are each a vapor.
The method of claim 5, wherein the nitrogen source comprises at least one selected from NH₃ and N 2.
The method of claim 5, wherein the boron source comprises at least one selected from BH3, BF3, BC l 3, B₂H 6, (CH₃CH₂)3B, (CH₃)3B, and diborane.
The method of claim 5, wherein the nitrogen source and the boron source comprise at least one selected from H₃NBH₃ and (BH)3(NH)3.
The method of claim 5, wherein the metal catalyst is at least one metal selected from nickel, cobalt, iron, platinum, palladium, gold, aluminum, chromium, copper, magnesium, manganese, molybdenum, rhodium, silicon, tantalum, titanium, tungsten, uranium, vanadium, and zirconium, and an alloy thereof.
The method of claim 5, wherein the second thermal treatment is performed in the presence of at least one selected from an inert gas and hydrogen gas.
A hexagonal boron nitride sheet prepared according to the method of claim 5.
canceled
The method of elaim-- 2claim 5, wherein the polishing comprises at least one selected from chemical polishing, physical polishing, chemical mechanical polishing, and electrolytic polishing.
The method of Q4aim-1 2claim 5, wherein the metal catalyst in sheet form af t er the polishing has a root mean square surface roughness of about 5 nanometers or less.
The method of Q4aim-1 2claim 5, wherein the metal catalyst in sheet form af t er the chemical polishing has a root mean square surface roughness of about 1.5 nanometers or less.
Layer stacks claimed or described, ordered top of device to substrate.
stacked structure of hexagonal boron nitride sheet and graphene
Materials described outside the worked examples.
hexagonal boron nitride sheet
BN
metal catalyst in sheet form
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 is a schematic view of an embodiment of a field effect transistor (FET); [0038]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
root mean square surface roughness of h-BN sheet | ≤ 2 nm | BN |
Raman E2g peak position of h-BN sheet | 1367 cm⁻¹ |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,790,775Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic view of an embodiment of a field effect transistor (FET); [0038]
FIG. 2 is a schematic view of another embodiment of a FET; [0039]
FIG. 3 is a schematic diagram illustrating an embodiment of a chemical vapor deposition (CVD) process; [0040]
FIG. 4 is an optical surface image of a copper foil before a first thermal treatment in
FIG. 5 is an optical surface image of the copper foil after the first thermal treatment in Example 1; [0042]
FIG. 6. Numerically, the surface roughness was reduced from about 25.8 nm to about 7.4 nm. [00160] The copper foil of
FIG. 7 is an AFM image of the copper foil after the first thermal treatment in Example 1; [0044]
FIG. 8 is an AFM image of the copper foil after the first thermal treatment and chemical polishing in Example 1; [0045]
FIGS. 9, 10 and 11 are optical surface images of h-BN sheets of Comparative Example 1, and Examples 1 and 2, respectively. [00163] Referring to
FIG. 10 is an optical surface image of an h-BN sheet obtained in Comparative Example 2; [0047]
FIG. 11 is an optical surface image of an h-BN sheet obtained in Example 1; [0048]
FIG. 12 is graph of intensity (arbitrary units, a.u.) versus wave number (inverse centimeters, cm-) and is a Raman spectrum of the h-BN sheet obtained in …
FIG. 13 is graph of intensity (arbitrary units, a.u.) versus wave number (inverse centimeters, cm-) and is a Raman spectrum of the h-BN sheet obtained in …
FIG. 14 indicates a percentage of the other components excluding h-BN. This indicates that the h-BN sheet of Example 1 had a purity of about 70.0%. [00170] As …
FIG. 15, the h-BN sheet of Example 1 was found to include 6 layers with an interlayer distance of about 3.46 Angstroms (A). Example 3 [00173] A graphene-based …
FIG. 16. [00174] The PMMA-coated h-BN sheet 12 of Example 1 was transferred onto silicon (n-Si)/silica (Si O 2) substrates 13 and 14 having a thickness of …
FIG. 17, the FET structure of Example 3 manufactured using the h-BN sheet was found to have an on-off ratio which was two or more times greater than an on-off …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A hexagonal boron nitride sheet having: a two-dimensional planar structure with a sp 2 B-N covalent bond; and a Van der Waals bond between boron-nitrogen layers, a root mn sqaesrae r:outghess of aboutt 2 nianomfeters o r: less; an d length of abut I millimete r or create w herein the hexagonal boron nitride sheet comprises hexagonal boron nitride with a purity of about 70 % or greater, when determined by Raman spectroscopy.
The hexagonal boron nitride sheet of claim 1, wherein the hexagonal boron nitride sheet comprises from 1 to about 100 boron-nitrogen layers.
The hexagonal boron nitride sheet of claim 1, wherein the hexagonal boron nitride sheet co es hexagonal boron nitride with a p ur ity of abot 70% or g re ate r, when deter d by Raman specosopyhas a root mean square surface roughness of about 2 nanometers or less, and a length of about 1 millimeter or greater.
The hexagonal boron nitride sheet of claim 1, wherein the hexagonal boron nitride sheet has a peak at 1,367 inverse centimeters with a f u ll width at half maximum of about 17.0 inverse centimeters or less in a Raman spectrum.
A stacked structure comprising: the hexagonal boron nitride sheet of claim 1; and graphene.
A method of preparing a hexagonal boron nitride sheet, the method comprising: preparing a metal catalyst in sheet form; first thermally treating the metal catalyst to increase a grain size of the metal catalyst; polishing a surface of the metal catalyst in sheet form af t er the first thermal treatment; and 2 RE₂ 0 111 0 5181US O SI -40549-US YPL 1 186US Application No. 13/705,700 Response dated: second thermally treating and contacting the first thermally treated metal catalyst with a nitrogen source and a boron source to form the hexagonal boron nitride sheet.
The method of claim 5, wherein a mean grain area of the metal catalyst in sheet form af t er the first thermal treatment has a mean increase of about at least 100% or greater than a mean grain area of the metal catalyst before the first thermal treatment.
The method of claim 5, wherein the metal catalyst in sheet form af t er the first thermal treatment has a mean grain area of about 1 square micrometer or greater.
The method of claim 5, wherein the metal catalyst in sheet form af t er the first thermal treatment has a root mean square surface roughness of about 7 nanometers or less.
The method of claim 5, wherein the first thermal treatment is performed at a temperature of about a lower temperature to about an upper temperature, wherein the lower temperature is according to Equation 1, Equation 1 lower temperature = (melting point of the metal catalyst X 0.60), and the upper temperature is according to Equation 2, Equation 2 upper temperature = (melting point of the metal catalyst X 0.97) °C.
The method of claim 5, wherein the hexagonal boron nitride sheet has a length of about 1 millimeter or greater.
The method of claim 5, wherein the nitrogen source and the boron source are each a vapor.
The method of claim 5, wherein the nitrogen source comprises at least one selected from NH₃ and N 2.
The method of claim 5, wherein the boron source comprises at least one selected from BH3, BF3, BC l 3, B₂H 6, (CH₃CH₂)3B, (CH₃)3B, and diborane.
The method of claim 5, wherein the nitrogen source and the boron source comprise at least one selected from H₃NBH₃ and (BH)3(NH)3.
The method of claim 5, wherein the metal catalyst is at least one metal selected from nickel, cobalt, iron, platinum, palladium, gold, aluminum, chromium, copper, magnesium, manganese, molybdenum, rhodium, silicon, tantalum, titanium, tungsten, uranium, vanadium, and zirconium, and an alloy thereof.
The method of claim 5, wherein the second thermal treatment is performed in the presence of at least one selected from an inert gas and hydrogen gas.
A hexagonal boron nitride sheet prepared according to the method of claim 5.
canceled
The method of elaim-- 2claim 5, wherein the polishing comprises at least one selected from chemical polishing, physical polishing, chemical mechanical polishing, and electrolytic polishing.
The method of Q4aim-1 2claim 5, wherein the metal catalyst in sheet form af t er the polishing has a root mean square surface roughness of about 5 nanometers or less.
The method of Q4aim-1 2claim 5, wherein the metal catalyst in sheet form af t er the chemical polishing has a root mean square surface roughness of about 1.5 nanometers or less.
Layer stacks claimed or described, ordered top of device to substrate.
stacked structure of hexagonal boron nitride sheet and graphene
Materials described outside the worked examples.
hexagonal boron nitride sheet
BN
metal catalyst in sheet form
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 is a schematic view of an embodiment of a field effect transistor (FET); [0038]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
root mean square surface roughness of h-BN sheet | ≤ 2 nm | BN |
Raman E2g peak position of h-BN sheet | 1367 cm⁻¹ |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,790,775Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic view of an embodiment of a field effect transistor (FET); [0038]
FIG. 2 is a schematic view of another embodiment of a FET; [0039]
FIG. 3 is a schematic diagram illustrating an embodiment of a chemical vapor deposition (CVD) process; [0040]
FIG. 4 is an optical surface image of a copper foil before a first thermal treatment in
FIG. 5 is an optical surface image of the copper foil after the first thermal treatment in Example 1; [0042]
FIG. 6. Numerically, the surface roughness was reduced from about 25.8 nm to about 7.4 nm. [00160] The copper foil of
FIG. 7 is an AFM image of the copper foil after the first thermal treatment in Example 1; [0044]
FIG. 8 is an AFM image of the copper foil after the first thermal treatment and chemical polishing in Example 1; [0045]
FIGS. 9, 10 and 11 are optical surface images of h-BN sheets of Comparative Example 1, and Examples 1 and 2, respectively. [00163] Referring to
FIG. 10 is an optical surface image of an h-BN sheet obtained in Comparative Example 2; [0047]
FIG. 11 is an optical surface image of an h-BN sheet obtained in Example 1; [0048]
FIG. 12 is graph of intensity (arbitrary units, a.u.) versus wave number (inverse centimeters, cm-) and is a Raman spectrum of the h-BN sheet obtained in …
FIG. 13 is graph of intensity (arbitrary units, a.u.) versus wave number (inverse centimeters, cm-) and is a Raman spectrum of the h-BN sheet obtained in …
FIG. 14 indicates a percentage of the other components excluding h-BN. This indicates that the h-BN sheet of Example 1 had a purity of about 70.0%. [00170] As …
FIG. 15, the h-BN sheet of Example 1 was found to include 6 layers with an interlayer distance of about 3.46 Angstroms (A). Example 3 [00173] A graphene-based …
FIG. 16. [00174] The PMMA-coated h-BN sheet 12 of Example 1 was transferred onto silicon (n-Si)/silica (Si O 2) substrates 13 and 14 having a thickness of …
FIG. 17, the FET structure of Example 3 manufactured using the h-BN sheet was found to have an on-off ratio which was two or more times greater than an on-off …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A hexagonal boron nitride sheet having: a two-dimensional planar structure with a sp 2 B-N covalent bond; and a Van der Waals bond between boron-nitrogen layers, a root mn sqaesrae r:outghess of aboutt 2 nianomfeters o r: less; an d length of abut I millimete r or create w herein the hexagonal boron nitride sheet comprises hexagonal boron nitride with a purity of about 70 % or greater, when determined by Raman spectroscopy.
The hexagonal boron nitride sheet of claim 1, wherein the hexagonal boron nitride sheet comprises from 1 to about 100 boron-nitrogen layers.
The hexagonal boron nitride sheet of claim 1, wherein the hexagonal boron nitride sheet co es hexagonal boron nitride with a p ur ity of abot 70% or g re ate r, when deter d by Raman specosopyhas a root mean square surface roughness of about 2 nanometers or less, and a length of about 1 millimeter or greater.
The hexagonal boron nitride sheet of claim 1, wherein the hexagonal boron nitride sheet has a peak at 1,367 inverse centimeters with a f u ll width at half maximum of about 17.0 inverse centimeters or less in a Raman spectrum.
A stacked structure comprising: the hexagonal boron nitride sheet of claim 1; and graphene.
A method of preparing a hexagonal boron nitride sheet, the method comprising: preparing a metal catalyst in sheet form; first thermally treating the metal catalyst to increase a grain size of the metal catalyst; polishing a surface of the metal catalyst in sheet form af t er the first thermal treatment; and 2 RE₂ 0 111 0 5181US O SI -40549-US YPL 1 186US Application No. 13/705,700 Response dated: second thermally treating and contacting the first thermally treated metal catalyst with a nitrogen source and a boron source to form the hexagonal boron nitride sheet.
The method of claim 5, wherein a mean grain area of the metal catalyst in sheet form af t er the first thermal treatment has a mean increase of about at least 100% or greater than a mean grain area of the metal catalyst before the first thermal treatment.
The method of claim 5, wherein the metal catalyst in sheet form af t er the first thermal treatment has a mean grain area of about 1 square micrometer or greater.
The method of claim 5, wherein the metal catalyst in sheet form af t er the first thermal treatment has a root mean square surface roughness of about 7 nanometers or less.
The method of claim 5, wherein the first thermal treatment is performed at a temperature of about a lower temperature to about an upper temperature, wherein the lower temperature is according to Equation 1, Equation 1 lower temperature = (melting point of the metal catalyst X 0.60), and the upper temperature is according to Equation 2, Equation 2 upper temperature = (melting point of the metal catalyst X 0.97) °C.
The method of claim 5, wherein the hexagonal boron nitride sheet has a length of about 1 millimeter or greater.
The method of claim 5, wherein the nitrogen source and the boron source are each a vapor.
The method of claim 5, wherein the nitrogen source comprises at least one selected from NH₃ and N 2.
The method of claim 5, wherein the boron source comprises at least one selected from BH3, BF3, BC l 3, B₂H 6, (CH₃CH₂)3B, (CH₃)3B, and diborane.
The method of claim 5, wherein the nitrogen source and the boron source comprise at least one selected from H₃NBH₃ and (BH)3(NH)3.
The method of claim 5, wherein the metal catalyst is at least one metal selected from nickel, cobalt, iron, platinum, palladium, gold, aluminum, chromium, copper, magnesium, manganese, molybdenum, rhodium, silicon, tantalum, titanium, tungsten, uranium, vanadium, and zirconium, and an alloy thereof.
The method of claim 5, wherein the second thermal treatment is performed in the presence of at least one selected from an inert gas and hydrogen gas.
A hexagonal boron nitride sheet prepared according to the method of claim 5.
canceled
The method of elaim-- 2claim 5, wherein the polishing comprises at least one selected from chemical polishing, physical polishing, chemical mechanical polishing, and electrolytic polishing.
The method of Q4aim-1 2claim 5, wherein the metal catalyst in sheet form af t er the polishing has a root mean square surface roughness of about 5 nanometers or less.
The method of Q4aim-1 2claim 5, wherein the metal catalyst in sheet form af t er the chemical polishing has a root mean square surface roughness of about 1.5 nanometers or less.
Layer stacks claimed or described, ordered top of device to substrate.
stacked structure of hexagonal boron nitride sheet and graphene
Materials described outside the worked examples.
hexagonal boron nitride sheet
BN
metal catalyst in sheet form
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 is a schematic view of an embodiment of a field effect transistor (FET); [0038]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
root mean square surface roughness of h-BN sheet | ≤ 2 nm | BN |
Raman E2g peak position of h-BN sheet | 1367 cm⁻¹ |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,790,775Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic view of an embodiment of a field effect transistor (FET); [0038]
FIG. 2 is a schematic view of another embodiment of a FET; [0039]
FIG. 3 is a schematic diagram illustrating an embodiment of a chemical vapor deposition (CVD) process; [0040]
FIG. 4 is an optical surface image of a copper foil before a first thermal treatment in
FIG. 5 is an optical surface image of the copper foil after the first thermal treatment in Example 1; [0042]
FIG. 6. Numerically, the surface roughness was reduced from about 25.8 nm to about 7.4 nm. [00160] The copper foil of
FIG. 7 is an AFM image of the copper foil after the first thermal treatment in Example 1; [0044]
FIG. 8 is an AFM image of the copper foil after the first thermal treatment and chemical polishing in Example 1; [0045]
FIGS. 9, 10 and 11 are optical surface images of h-BN sheets of Comparative Example 1, and Examples 1 and 2, respectively. [00163] Referring to
FIG. 10 is an optical surface image of an h-BN sheet obtained in Comparative Example 2; [0047]
FIG. 11 is an optical surface image of an h-BN sheet obtained in Example 1; [0048]
FIG. 12 is graph of intensity (arbitrary units, a.u.) versus wave number (inverse centimeters, cm-) and is a Raman spectrum of the h-BN sheet obtained in …
FIG. 13 is graph of intensity (arbitrary units, a.u.) versus wave number (inverse centimeters, cm-) and is a Raman spectrum of the h-BN sheet obtained in …
FIG. 14 indicates a percentage of the other components excluding h-BN. This indicates that the h-BN sheet of Example 1 had a purity of about 70.0%. [00170] As …
FIG. 15, the h-BN sheet of Example 1 was found to include 6 layers with an interlayer distance of about 3.46 Angstroms (A). Example 3 [00173] A graphene-based …
FIG. 16. [00174] The PMMA-coated h-BN sheet 12 of Example 1 was transferred onto silicon (n-Si)/silica (Si O 2) substrates 13 and 14 having a thickness of …
FIG. 17, the FET structure of Example 3 manufactured using the h-BN sheet was found to have an on-off ratio which was two or more times greater than an on-off …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A hexagonal boron nitride sheet having: a two-dimensional planar structure with a sp 2 B-N covalent bond; and a Van der Waals bond between boron-nitrogen layers, a root mn sqaesrae r:outghess of aboutt 2 nianomfeters o r: less; an d length of abut I millimete r or create w herein the hexagonal boron nitride sheet comprises hexagonal boron nitride with a purity of about 70 % or greater, when determined by Raman spectroscopy.
The hexagonal boron nitride sheet of claim 1, wherein the hexagonal boron nitride sheet comprises from 1 to about 100 boron-nitrogen layers.
The hexagonal boron nitride sheet of claim 1, wherein the hexagonal boron nitride sheet co es hexagonal boron nitride with a p ur ity of abot 70% or g re ate r, when deter d by Raman specosopyhas a root mean square surface roughness of about 2 nanometers or less, and a length of about 1 millimeter or greater.
The hexagonal boron nitride sheet of claim 1, wherein the hexagonal boron nitride sheet has a peak at 1,367 inverse centimeters with a f u ll width at half maximum of about 17.0 inverse centimeters or less in a Raman spectrum.
A stacked structure comprising: the hexagonal boron nitride sheet of claim 1; and graphene.
A method of preparing a hexagonal boron nitride sheet, the method comprising: preparing a metal catalyst in sheet form; first thermally treating the metal catalyst to increase a grain size of the metal catalyst; polishing a surface of the metal catalyst in sheet form af t er the first thermal treatment; and 2 RE₂ 0 111 0 5181US O SI -40549-US YPL 1 186US Application No. 13/705,700 Response dated: second thermally treating and contacting the first thermally treated metal catalyst with a nitrogen source and a boron source to form the hexagonal boron nitride sheet.
The method of claim 5, wherein a mean grain area of the metal catalyst in sheet form af t er the first thermal treatment has a mean increase of about at least 100% or greater than a mean grain area of the metal catalyst before the first thermal treatment.
The method of claim 5, wherein the metal catalyst in sheet form af t er the first thermal treatment has a mean grain area of about 1 square micrometer or greater.
The method of claim 5, wherein the metal catalyst in sheet form af t er the first thermal treatment has a root mean square surface roughness of about 7 nanometers or less.
The method of claim 5, wherein the first thermal treatment is performed at a temperature of about a lower temperature to about an upper temperature, wherein the lower temperature is according to Equation 1, Equation 1 lower temperature = (melting point of the metal catalyst X 0.60), and the upper temperature is according to Equation 2, Equation 2 upper temperature = (melting point of the metal catalyst X 0.97) °C.
The method of claim 5, wherein the hexagonal boron nitride sheet has a length of about 1 millimeter or greater.
The method of claim 5, wherein the nitrogen source and the boron source are each a vapor.
The method of claim 5, wherein the nitrogen source comprises at least one selected from NH₃ and N 2.
The method of claim 5, wherein the boron source comprises at least one selected from BH3, BF3, BC l 3, B₂H 6, (CH₃CH₂)3B, (CH₃)3B, and diborane.
The method of claim 5, wherein the nitrogen source and the boron source comprise at least one selected from H₃NBH₃ and (BH)3(NH)3.
The method of claim 5, wherein the metal catalyst is at least one metal selected from nickel, cobalt, iron, platinum, palladium, gold, aluminum, chromium, copper, magnesium, manganese, molybdenum, rhodium, silicon, tantalum, titanium, tungsten, uranium, vanadium, and zirconium, and an alloy thereof.
The method of claim 5, wherein the second thermal treatment is performed in the presence of at least one selected from an inert gas and hydrogen gas.
A hexagonal boron nitride sheet prepared according to the method of claim 5.
canceled
The method of elaim-- 2claim 5, wherein the polishing comprises at least one selected from chemical polishing, physical polishing, chemical mechanical polishing, and electrolytic polishing.
The method of Q4aim-1 2claim 5, wherein the metal catalyst in sheet form af t er the polishing has a root mean square surface roughness of about 5 nanometers or less.
The method of Q4aim-1 2claim 5, wherein the metal catalyst in sheet form af t er the chemical polishing has a root mean square surface roughness of about 1.5 nanometers or less.
Layer stacks claimed or described, ordered top of device to substrate.
stacked structure of hexagonal boron nitride sheet and graphene
Materials described outside the worked examples.
hexagonal boron nitride sheet
BN
metal catalyst in sheet form
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 is a schematic view of an embodiment of a field effect transistor (FET); [0038]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
root mean square surface roughness of h-BN sheet | ≤ 2 nm | BN |
Raman E2g peak position of h-BN sheet | 1367 cm⁻¹ |
Related documents with shared materials, methods, properties, or citations.
nitrogen source and boron source (vapor)
ammonia
NH₃
nitrogen gas
N₂
boron source
ammonia borane
H₃NBH₃
borazine
(BH)3(NH)3
graphene
FIG. 2 is a schematic view of another embodiment of a FET; [0039]
FIG. 6. Numerically, the surface roughness was reduced from about 25.8 nm to about 7.4 nm. [00160] The copper foil of
FIG. 7 is an AFM image of the copper foil after the first thermal treatment in Example 1; [0044]
FIG. 8 is an AFM image of the copper foil after the first thermal treatment and chemical polishing in Example 1; [0045]
FIG. 12 is graph of intensity (arbitrary units, a.u.) versus wave number (inverse centimeters, cm-) and is a Raman spectrum of the h-BN sheet obtained in …
FIG. 12 is graph of intensity (arbitrary units, a.u.) versus wave number (inverse centimeters, cm-) and is a Raman spectrum of the h-BN sheet obtained in …
FIG. 13 is graph of intensity (arbitrary units, a.u.) versus wave number (inverse centimeters, cm-) and is a Raman spectrum of the h-BN sheet obtained in …
FIG. 13 is graph of intensity (arbitrary units, a.u.) versus wave number (inverse centimeters, cm-) and is a Raman spectrum of the h-BN sheet obtained in …
FIG. 14 indicates a percentage of the other components excluding h-BN. This indicates that the h-BN sheet of Example 1 had a purity of about 70.0%. [00170] As …
FIG. 14 indicates a percentage of the other components excluding h-BN. This indicates that the h-BN sheet of Example 1 had a purity of about 70.0%. [00170] As …
FIG. 15, the h-BN sheet of Example 1 was found to include 6 layers with an interlayer distance of about 3.46 Angstroms (A). Example 3 [00173] A graphene-based …
FIG. 15, the h-BN sheet of Example 1 was found to include 6 layers with an interlayer distance of about 3.46 Angstroms (A). Example 3 [00173] A graphene-based …
FIG. 16. [00174] The PMMA-coated h-BN sheet 12 of Example 1 was transferred onto silicon (n-Si)/silica (Si O 2) substrates 13 and 14 having a thickness of …
FIG. 16. [00174] The PMMA-coated h-BN sheet 12 of Example 1 was transferred onto silicon (n-Si)/silica (Si O 2) substrates 13 and 14 having a thickness of …
FIG. 17, the FET structure of Example 3 manufactured using the h-BN sheet was found to have an on-off ratio which was two or more times greater than an on-off …
FIG. 17, the FET structure of Example 3 manufactured using the h-BN sheet was found to have an on-off ratio which was two or more times greater than an on-off …
Raman peak FWHM of h-BN sheet at 1367 cm^-1 | ≤ 17 cm⁻¹ | BN |
root mean square surface roughness of metal catalyst after first thermal treatment | ≤ 7 nm | metal catalyst in sheet form |
root mean square surface roughness of metal catalyst after polishing | ≤ 5 nm | metal catalyst in sheet form |
root mean square surface roughness of metal catalyst after chemical polishing | ≤ 1.5 nm | metal catalyst in sheet form |
Thickness | 0.5–1 nm | — |
Duration | 600–86400 s | — |
Duration | 1200–72000 s | — |
Thickness | 0.01–7 nm | — |
Thickness | 0.5–5 nm | — |
Flow Rate | 20–5000 sccm | — |
Flow Rate | 40–3000 sccm | — |
Flow Rate | 1–100 sccm | — |
Flow Rate | 2–10 sccm | — |
Duration | 60–7200 s | — |
Thickness | 10–1000 mm | — |
Thickness | 7.4–25.8 nm | — |
Thickness | 4.24–7.4 nm | — |
Thickness | 0.01–2 nm | — |
Thickness | 1322–1350 cm | — |
Thickness | 1–2 cm | — |
Thickness | 2–10 mm | — |
Thickness | 0.01–5 nm | — |
Thickness | 0.02–4 nm | — |
Temperature | 110–130 °C | — |
nitrogen source and boron source (vapor)
ammonia
NH₃
nitrogen gas
N₂
boron source
ammonia borane
H₃NBH₃
borazine
(BH)3(NH)3
graphene
FIG. 2 is a schematic view of another embodiment of a FET; [0039]
FIG. 6. Numerically, the surface roughness was reduced from about 25.8 nm to about 7.4 nm. [00160] The copper foil of
FIG. 7 is an AFM image of the copper foil after the first thermal treatment in Example 1; [0044]
FIG. 8 is an AFM image of the copper foil after the first thermal treatment and chemical polishing in Example 1; [0045]
FIG. 12 is graph of intensity (arbitrary units, a.u.) versus wave number (inverse centimeters, cm-) and is a Raman spectrum of the h-BN sheet obtained in …
FIG. 12 is graph of intensity (arbitrary units, a.u.) versus wave number (inverse centimeters, cm-) and is a Raman spectrum of the h-BN sheet obtained in …
FIG. 13 is graph of intensity (arbitrary units, a.u.) versus wave number (inverse centimeters, cm-) and is a Raman spectrum of the h-BN sheet obtained in …
FIG. 13 is graph of intensity (arbitrary units, a.u.) versus wave number (inverse centimeters, cm-) and is a Raman spectrum of the h-BN sheet obtained in …
FIG. 14 indicates a percentage of the other components excluding h-BN. This indicates that the h-BN sheet of Example 1 had a purity of about 70.0%. [00170] As …
FIG. 14 indicates a percentage of the other components excluding h-BN. This indicates that the h-BN sheet of Example 1 had a purity of about 70.0%. [00170] As …
FIG. 15, the h-BN sheet of Example 1 was found to include 6 layers with an interlayer distance of about 3.46 Angstroms (A). Example 3 [00173] A graphene-based …
FIG. 15, the h-BN sheet of Example 1 was found to include 6 layers with an interlayer distance of about 3.46 Angstroms (A). Example 3 [00173] A graphene-based …
FIG. 16. [00174] The PMMA-coated h-BN sheet 12 of Example 1 was transferred onto silicon (n-Si)/silica (Si O 2) substrates 13 and 14 having a thickness of …
FIG. 16. [00174] The PMMA-coated h-BN sheet 12 of Example 1 was transferred onto silicon (n-Si)/silica (Si O 2) substrates 13 and 14 having a thickness of …
FIG. 17, the FET structure of Example 3 manufactured using the h-BN sheet was found to have an on-off ratio which was two or more times greater than an on-off …
FIG. 17, the FET structure of Example 3 manufactured using the h-BN sheet was found to have an on-off ratio which was two or more times greater than an on-off …
Raman peak FWHM of h-BN sheet at 1367 cm^-1 | ≤ 17 cm⁻¹ | BN |
root mean square surface roughness of metal catalyst after first thermal treatment | ≤ 7 nm | metal catalyst in sheet form |
root mean square surface roughness of metal catalyst after polishing | ≤ 5 nm | metal catalyst in sheet form |
root mean square surface roughness of metal catalyst after chemical polishing | ≤ 1.5 nm | metal catalyst in sheet form |
Thickness | 0.5–1 nm | — |
Duration | 600–86400 s | — |
Duration | 1200–72000 s | — |
Thickness | 0.01–7 nm | — |
Thickness | 0.5–5 nm | — |
Flow Rate | 20–5000 sccm | — |
Flow Rate | 40–3000 sccm | — |
Flow Rate | 1–100 sccm | — |
Flow Rate | 2–10 sccm | — |
Duration | 60–7200 s | — |
Thickness | 10–1000 mm | — |
Thickness | 7.4–25.8 nm | — |
Thickness | 4.24–7.4 nm | — |
Thickness | 0.01–2 nm | — |
Thickness | 1322–1350 cm | — |
Thickness | 1–2 cm | — |
Thickness | 2–10 mm | — |
Thickness | 0.01–5 nm | — |
Thickness | 0.02–4 nm | — |
Temperature | 110–130 °C | — |
nitrogen source and boron source (vapor)
ammonia
NH₃
nitrogen gas
N₂
boron source
ammonia borane
H₃NBH₃
borazine
(BH)3(NH)3
graphene
FIG. 2 is a schematic view of another embodiment of a FET; [0039]
FIG. 6. Numerically, the surface roughness was reduced from about 25.8 nm to about 7.4 nm. [00160] The copper foil of
FIG. 7 is an AFM image of the copper foil after the first thermal treatment in Example 1; [0044]
FIG. 8 is an AFM image of the copper foil after the first thermal treatment and chemical polishing in Example 1; [0045]
FIG. 12 is graph of intensity (arbitrary units, a.u.) versus wave number (inverse centimeters, cm-) and is a Raman spectrum of the h-BN sheet obtained in …
FIG. 12 is graph of intensity (arbitrary units, a.u.) versus wave number (inverse centimeters, cm-) and is a Raman spectrum of the h-BN sheet obtained in …
FIG. 13 is graph of intensity (arbitrary units, a.u.) versus wave number (inverse centimeters, cm-) and is a Raman spectrum of the h-BN sheet obtained in …
FIG. 13 is graph of intensity (arbitrary units, a.u.) versus wave number (inverse centimeters, cm-) and is a Raman spectrum of the h-BN sheet obtained in …
FIG. 14 indicates a percentage of the other components excluding h-BN. This indicates that the h-BN sheet of Example 1 had a purity of about 70.0%. [00170] As …
FIG. 14 indicates a percentage of the other components excluding h-BN. This indicates that the h-BN sheet of Example 1 had a purity of about 70.0%. [00170] As …
FIG. 15, the h-BN sheet of Example 1 was found to include 6 layers with an interlayer distance of about 3.46 Angstroms (A). Example 3 [00173] A graphene-based …
FIG. 15, the h-BN sheet of Example 1 was found to include 6 layers with an interlayer distance of about 3.46 Angstroms (A). Example 3 [00173] A graphene-based …
FIG. 16. [00174] The PMMA-coated h-BN sheet 12 of Example 1 was transferred onto silicon (n-Si)/silica (Si O 2) substrates 13 and 14 having a thickness of …
FIG. 16. [00174] The PMMA-coated h-BN sheet 12 of Example 1 was transferred onto silicon (n-Si)/silica (Si O 2) substrates 13 and 14 having a thickness of …
FIG. 17, the FET structure of Example 3 manufactured using the h-BN sheet was found to have an on-off ratio which was two or more times greater than an on-off …
FIG. 17, the FET structure of Example 3 manufactured using the h-BN sheet was found to have an on-off ratio which was two or more times greater than an on-off …
Raman peak FWHM of h-BN sheet at 1367 cm^-1 | ≤ 17 cm⁻¹ | BN |
root mean square surface roughness of metal catalyst after first thermal treatment | ≤ 7 nm | metal catalyst in sheet form |
root mean square surface roughness of metal catalyst after polishing | ≤ 5 nm | metal catalyst in sheet form |
root mean square surface roughness of metal catalyst after chemical polishing | ≤ 1.5 nm | metal catalyst in sheet form |
Thickness | 0.5–1 nm | — |
Duration | 600–86400 s | — |
Duration | 1200–72000 s | — |
Thickness | 0.01–7 nm | — |
Thickness | 0.5–5 nm | — |
Flow Rate | 20–5000 sccm | — |
Flow Rate | 40–3000 sccm | — |
Flow Rate | 1–100 sccm | — |
Flow Rate | 2–10 sccm | — |
Duration | 60–7200 s | — |
Thickness | 10–1000 mm | — |
Thickness | 7.4–25.8 nm | — |
Thickness | 4.24–7.4 nm | — |
Thickness | 0.01–2 nm | — |
Thickness | 1322–1350 cm | — |
Thickness | 1–2 cm | — |
Thickness | 2–10 mm | — |
Thickness | 0.01–5 nm | — |
Thickness | 0.02–4 nm | — |
Temperature | 110–130 °C | — |
nitrogen source and boron source (vapor)
ammonia
NH₃
nitrogen gas
N₂
boron source
ammonia borane
H₃NBH₃
borazine
(BH)3(NH)3
graphene
FIG. 2 is a schematic view of another embodiment of a FET; [0039]
FIG. 6. Numerically, the surface roughness was reduced from about 25.8 nm to about 7.4 nm. [00160] The copper foil of
FIG. 7 is an AFM image of the copper foil after the first thermal treatment in Example 1; [0044]
FIG. 8 is an AFM image of the copper foil after the first thermal treatment and chemical polishing in Example 1; [0045]
FIG. 12 is graph of intensity (arbitrary units, a.u.) versus wave number (inverse centimeters, cm-) and is a Raman spectrum of the h-BN sheet obtained in …
FIG. 12 is graph of intensity (arbitrary units, a.u.) versus wave number (inverse centimeters, cm-) and is a Raman spectrum of the h-BN sheet obtained in …
FIG. 13 is graph of intensity (arbitrary units, a.u.) versus wave number (inverse centimeters, cm-) and is a Raman spectrum of the h-BN sheet obtained in …
FIG. 13 is graph of intensity (arbitrary units, a.u.) versus wave number (inverse centimeters, cm-) and is a Raman spectrum of the h-BN sheet obtained in …
FIG. 14 indicates a percentage of the other components excluding h-BN. This indicates that the h-BN sheet of Example 1 had a purity of about 70.0%. [00170] As …
FIG. 14 indicates a percentage of the other components excluding h-BN. This indicates that the h-BN sheet of Example 1 had a purity of about 70.0%. [00170] As …
FIG. 15, the h-BN sheet of Example 1 was found to include 6 layers with an interlayer distance of about 3.46 Angstroms (A). Example 3 [00173] A graphene-based …
FIG. 15, the h-BN sheet of Example 1 was found to include 6 layers with an interlayer distance of about 3.46 Angstroms (A). Example 3 [00173] A graphene-based …
FIG. 16. [00174] The PMMA-coated h-BN sheet 12 of Example 1 was transferred onto silicon (n-Si)/silica (Si O 2) substrates 13 and 14 having a thickness of …
FIG. 16. [00174] The PMMA-coated h-BN sheet 12 of Example 1 was transferred onto silicon (n-Si)/silica (Si O 2) substrates 13 and 14 having a thickness of …
FIG. 17, the FET structure of Example 3 manufactured using the h-BN sheet was found to have an on-off ratio which was two or more times greater than an on-off …
FIG. 17, the FET structure of Example 3 manufactured using the h-BN sheet was found to have an on-off ratio which was two or more times greater than an on-off …
Raman peak FWHM of h-BN sheet at 1367 cm^-1 | ≤ 17 cm⁻¹ | BN |
root mean square surface roughness of metal catalyst after first thermal treatment | ≤ 7 nm | metal catalyst in sheet form |
root mean square surface roughness of metal catalyst after polishing | ≤ 5 nm | metal catalyst in sheet form |
root mean square surface roughness of metal catalyst after chemical polishing | ≤ 1.5 nm | metal catalyst in sheet form |
Thickness | 0.5–1 nm | — |
Duration | 600–86400 s | — |
Duration | 1200–72000 s | — |
Thickness | 0.01–7 nm | — |
Thickness | 0.5–5 nm | — |
Flow Rate | 20–5000 sccm | — |
Flow Rate | 40–3000 sccm | — |
Flow Rate | 1–100 sccm | — |
Flow Rate | 2–10 sccm | — |
Duration | 60–7200 s | — |
Thickness | 10–1000 mm | — |
Thickness | 7.4–25.8 nm | — |
Thickness | 4.24–7.4 nm | — |
Thickness | 0.01–2 nm | — |
Thickness | 1322–1350 cm | — |
Thickness | 1–2 cm | — |
Thickness | 2–10 mm | — |
Thickness | 0.01–5 nm | — |
Thickness | 0.02–4 nm | — |
Temperature | 110–130 °C | — |