Patent
US 11,117,804METHOD OF SYNTHESIZING THICKNESS-CONTROLLED GRAPHENE THROUGH CHEMICAL VAPOR DEPOSITION USING CU-NI THIN FILM LAMINATE
Kilwon CHO
US
Copyright © 2026 Matter42. All rights reserved.
Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 C and 1D respectively show the Raman I 2D/I G rati o map and the 2D FWH M map of graphene synthesized in Example 32, FIG. iE is an image showing the …
FIG. 2B is a graph showing the transmittance of graphene synthesized in Examples 3, 6 to 9, 12, 15 to 18, 22, 25 to 28, 32, and 35 to 38;
FIG. 3C is an image showing graphene of Example 32 transferred onto a silicon dioxide substrate, and
FIG. 4 is a graph showing the sheet resistance versus the transmittance of graphene synthesized in Examples 29 to 33 and graphene synthesized through a …
FIG. 5 D shows the SAED (Selective-Area Electron Diffraction) pattern and the intensity profile of synthesized graphene;
FIG. 6C is a graph showing the number of layers of synthesized graphene depending on the thickness of the nickel thin film over synthesis time, and
FIG. 7 shows the mechanism of growth of graphene using the Cu- Ni thin film laminate.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of synthesizing graphene, comprising: (a) placing a Cu-Ni thin film laminate including a copper thin film comprising a top surface and a bottom surface and a nickel thin film comprising a top surface and a bottom surface formed on the bottom surface of the copper thin film in a chemical vapor depositor; and (b) bringing a graphene precursor into contact with the Cu-Ni thin film laminate such that the top surface of the copper thin film and the bottom surface of the nickel thin film are exposed to the graphene precursor, and performing chemical vapor deposition (CVD), thus synthesizing Bern al-stacked multilayer graphene on the top surface of the copper thin film, wherein during the synthesizing step of graphene, a nickel concentration gradient in the copper thin film is generated and a nickel concentration at the bottom surface of the copper thin film is higher than a nickel concentration at the top surface of the copper thin film as a part of nickel of the nickel thin film of the laminate is diffused to interior of the copper thin film, carbon atoms generated by a decomposition of the graphene precursor are subjected to surface-mediated reaction to form top-layer graphene of the Bernal-stacked multilayer graphene in the top surface of the copper thin film, the carbon atoms are absorbed to the bottom surface of the nickel thin film and a carbon concentration gradient is formed in the thickness direction of the Cu-Ni thin film laminate, the carbon atoms absorbed to the bottom surface of the nickel thin film are diffused by the carbon concentration gradient to the copper thin film along the thickness direction of the copper thin film such that the diffused carbon atoms reach the top surface of the copper thin film and form adlayer graphene enthrough surface-mediated reaction between the top-layer graphene and the top surface of the copper thin film, the chemical vapor deposition is performed at a temperature of 600 to 1,300 0 C, and a thickness or a number of layers of the graphene synthesized on the top surface of the copper thin film is controlled by adjusting a thickness of the nickel thin film of the laminate. Currently amended
The method of claim 1, wherein the nickel thin film has a thickness ranging from 5 to 1,000 nm. Original
The method of claim 1, wherein a number of layers of the graphene is any one ranging from -1 2 to 10. Currently amended
The method of claim 1, wherein a thickness of the nickel thin film is adjusted to a range of 1000 nm or less but exceeding 70 nm in step (a), whereby multilayer graphene is synthesized in step (b). Original
The method of claim 1, wherein the graphene precursor is a hydrocarbon compound. Original
The method of claim 1, wherein the chemical vapor deposition is performed by supplying the graphene precursor at a rate of 0.1 to 500 s c cm. Original
The method of claim 1, wherein the chemical vapor deposition is performed for 10 to 500 m in. Original
The method of claim 1, wherein the chemical vapor deposition is performed using any one process selected from the group consisting of low-pressure chemical vapor deposition, atmospheric-pressure chemical vapor deposition, plasma-enhanced chemical vapor deposition, Joule-heating chemical vapor deposition, and microwave chemical vapor deposition. Original
The method of claim 1, wherein the nickel thin film in step (a) is a nickel thin film having a pattern. Original
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A patterned graphene, comprising: a first graphene part including m graphene layers; a second graphene part, connected side by side to the first graphene part through covalent bonding, patterned, and configured to include m+n graphene layers, wherein m is any one integer of 1 to 5, and n is any one integer of 1 to 5. Withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
Cu-Ni thin film laminate for CVD graphene growth
patterned graphene
Materials described outside the worked examples.
Bernal-stacked multilayer graphene
nickel thin film
Ni
copper thin film
Cu
Cu-Ni thin film laminate
hydrocarbon compound (graphene precursor)
methane
CH₄
ethane
C₂H₆
propane
C₃H₈
butane
C₄H₁₀
ethylene
C₂H₄
propylene
C₃H₆
butylene
C₄H₈
benzene
C₆H₆
ethanol
C₂H₅OH
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 1 C and 1D respectively show the Raman I 2D/I G rati o map and the 2D FWH M map of graphene synthesized in Example 32, FIG. iE is an image showing the …
FIG. 2B is a graph showing the transmittance of graphene synthesized in Examples 3, 6 to 9, 12, 15 to 18, 22, 25 to 28, 32, and 35 to 38;
FIG. 3C is an image showing graphene of Example 32 transferred onto a silicon dioxide substrate, and
FIG. 3C is an image showing graphene of Example 32 transferred onto a silicon dioxide substrate, and
FIG. 4 is a graph showing the sheet resistance versus the transmittance of graphene synthesized in Examples 29 to 33 and graphene synthesized through a …
FIG. 4 is a graph showing the sheet resistance versus the transmittance of graphene synthesized in Examples 29 to 33 and graphene synthesized through a …
FIG. 5 D shows the SAED (Selective-Area Electron Diffraction) pattern and the intensity profile of synthesized graphene;
FIG. 5 D shows the SAED (Selective-Area Electron Diffraction) pattern and the intensity profile of synthesized graphene;
FIG. 6C is a graph showing the number of layers of synthesized graphene depending on the thickness of the nickel thin film over synthesis time, and
FIG. 6C is a graph showing the number of layers of synthesized graphene depending on the thickness of the nickel thin film over synthesis time, and
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 5–1000 nm | — |
Thickness | 50–300 nm | — |
Thickness | 10–70 nm | — |
Temperature | 600–1300 °C | — |
Temperature | 700–1300 °C | — |
Temperature | 850–1050 °C | — |
Flow Rate | 0.1–500 sccm | — |
Flow Rate | 10–500 sccm | — |
Duration | 10–500 min | — |
Thickness | ≥ 70 nm | — |
Table 1
1, with the exception that the conditions of Example 39 were used in lieu of the conditions of Example 1 of Table 1 below and that a nickel thin film having the pattern shown in FIG.
p. 9
Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 C and 1D respectively show the Raman I 2D/I G rati o map and the 2D FWH M map of graphene synthesized in Example 32, FIG. iE is an image showing the …
FIG. 2B is a graph showing the transmittance of graphene synthesized in Examples 3, 6 to 9, 12, 15 to 18, 22, 25 to 28, 32, and 35 to 38;
FIG. 3C is an image showing graphene of Example 32 transferred onto a silicon dioxide substrate, and
FIG. 4 is a graph showing the sheet resistance versus the transmittance of graphene synthesized in Examples 29 to 33 and graphene synthesized through a …
FIG. 5 D shows the SAED (Selective-Area Electron Diffraction) pattern and the intensity profile of synthesized graphene;
FIG. 6C is a graph showing the number of layers of synthesized graphene depending on the thickness of the nickel thin film over synthesis time, and
FIG. 7 shows the mechanism of growth of graphene using the Cu- Ni thin film laminate.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of synthesizing graphene, comprising: (a) placing a Cu-Ni thin film laminate including a copper thin film comprising a top surface and a bottom surface and a nickel thin film comprising a top surface and a bottom surface formed on the bottom surface of the copper thin film in a chemical vapor depositor; and (b) bringing a graphene precursor into contact with the Cu-Ni thin film laminate such that the top surface of the copper thin film and the bottom surface of the nickel thin film are exposed to the graphene precursor, and performing chemical vapor deposition (CVD), thus synthesizing Bern al-stacked multilayer graphene on the top surface of the copper thin film, wherein during the synthesizing step of graphene, a nickel concentration gradient in the copper thin film is generated and a nickel concentration at the bottom surface of the copper thin film is higher than a nickel concentration at the top surface of the copper thin film as a part of nickel of the nickel thin film of the laminate is diffused to interior of the copper thin film, carbon atoms generated by a decomposition of the graphene precursor are subjected to surface-mediated reaction to form top-layer graphene of the Bernal-stacked multilayer graphene in the top surface of the copper thin film, the carbon atoms are absorbed to the bottom surface of the nickel thin film and a carbon concentration gradient is formed in the thickness direction of the Cu-Ni thin film laminate, the carbon atoms absorbed to the bottom surface of the nickel thin film are diffused by the carbon concentration gradient to the copper thin film along the thickness direction of the copper thin film such that the diffused carbon atoms reach the top surface of the copper thin film and form adlayer graphene enthrough surface-mediated reaction between the top-layer graphene and the top surface of the copper thin film, the chemical vapor deposition is performed at a temperature of 600 to 1,300 0 C, and a thickness or a number of layers of the graphene synthesized on the top surface of the copper thin film is controlled by adjusting a thickness of the nickel thin film of the laminate. Currently amended
The method of claim 1, wherein the nickel thin film has a thickness ranging from 5 to 1,000 nm. Original
The method of claim 1, wherein a number of layers of the graphene is any one ranging from -1 2 to 10. Currently amended
The method of claim 1, wherein a thickness of the nickel thin film is adjusted to a range of 1000 nm or less but exceeding 70 nm in step (a), whereby multilayer graphene is synthesized in step (b). Original
The method of claim 1, wherein the graphene precursor is a hydrocarbon compound. Original
The method of claim 1, wherein the chemical vapor deposition is performed by supplying the graphene precursor at a rate of 0.1 to 500 s c cm. Original
The method of claim 1, wherein the chemical vapor deposition is performed for 10 to 500 m in. Original
The method of claim 1, wherein the chemical vapor deposition is performed using any one process selected from the group consisting of low-pressure chemical vapor deposition, atmospheric-pressure chemical vapor deposition, plasma-enhanced chemical vapor deposition, Joule-heating chemical vapor deposition, and microwave chemical vapor deposition. Original
The method of claim 1, wherein the nickel thin film in step (a) is a nickel thin film having a pattern. Original
Canceled
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Canceled
Canceled
Canceled
A patterned graphene, comprising: a first graphene part including m graphene layers; a second graphene part, connected side by side to the first graphene part through covalent bonding, patterned, and configured to include m+n graphene layers, wherein m is any one integer of 1 to 5, and n is any one integer of 1 to 5. Withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
Cu-Ni thin film laminate for CVD graphene growth
patterned graphene
Materials described outside the worked examples.
Bernal-stacked multilayer graphene
nickel thin film
Ni
copper thin film
Cu
Cu-Ni thin film laminate
hydrocarbon compound (graphene precursor)
methane
CH₄
ethane
C₂H₆
propane
C₃H₈
butane
C₄H₁₀
ethylene
C₂H₄
propylene
C₃H₆
butylene
C₄H₈
benzene
C₆H₆
ethanol
C₂H₅OH
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 1 C and 1D respectively show the Raman I 2D/I G rati o map and the 2D FWH M map of graphene synthesized in Example 32, FIG. iE is an image showing the …
FIG. 2B is a graph showing the transmittance of graphene synthesized in Examples 3, 6 to 9, 12, 15 to 18, 22, 25 to 28, 32, and 35 to 38;
FIG. 3C is an image showing graphene of Example 32 transferred onto a silicon dioxide substrate, and
FIG. 3C is an image showing graphene of Example 32 transferred onto a silicon dioxide substrate, and
FIG. 4 is a graph showing the sheet resistance versus the transmittance of graphene synthesized in Examples 29 to 33 and graphene synthesized through a …
FIG. 4 is a graph showing the sheet resistance versus the transmittance of graphene synthesized in Examples 29 to 33 and graphene synthesized through a …
FIG. 5 D shows the SAED (Selective-Area Electron Diffraction) pattern and the intensity profile of synthesized graphene;
FIG. 5 D shows the SAED (Selective-Area Electron Diffraction) pattern and the intensity profile of synthesized graphene;
FIG. 6C is a graph showing the number of layers of synthesized graphene depending on the thickness of the nickel thin film over synthesis time, and
FIG. 6C is a graph showing the number of layers of synthesized graphene depending on the thickness of the nickel thin film over synthesis time, and
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 5–1000 nm | — |
Thickness | 50–300 nm | — |
Thickness | 10–70 nm | — |
Temperature | 600–1300 °C | — |
Temperature | 700–1300 °C | — |
Temperature | 850–1050 °C | — |
Flow Rate | 0.1–500 sccm | — |
Flow Rate | 10–500 sccm | — |
Duration | 10–500 min | — |
Thickness | ≥ 70 nm | — |
Table 1
1, with the exception that the conditions of Example 39 were used in lieu of the conditions of Example 1 of Table 1 below and that a nickel thin film having the pattern shown in FIG.
p. 9
Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 C and 1D respectively show the Raman I 2D/I G rati o map and the 2D FWH M map of graphene synthesized in Example 32, FIG. iE is an image showing the …
FIG. 2B is a graph showing the transmittance of graphene synthesized in Examples 3, 6 to 9, 12, 15 to 18, 22, 25 to 28, 32, and 35 to 38;
FIG. 3C is an image showing graphene of Example 32 transferred onto a silicon dioxide substrate, and
FIG. 4 is a graph showing the sheet resistance versus the transmittance of graphene synthesized in Examples 29 to 33 and graphene synthesized through a …
FIG. 5 D shows the SAED (Selective-Area Electron Diffraction) pattern and the intensity profile of synthesized graphene;
FIG. 6C is a graph showing the number of layers of synthesized graphene depending on the thickness of the nickel thin film over synthesis time, and
FIG. 7 shows the mechanism of growth of graphene using the Cu- Ni thin film laminate.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of synthesizing graphene, comprising: (a) placing a Cu-Ni thin film laminate including a copper thin film comprising a top surface and a bottom surface and a nickel thin film comprising a top surface and a bottom surface formed on the bottom surface of the copper thin film in a chemical vapor depositor; and (b) bringing a graphene precursor into contact with the Cu-Ni thin film laminate such that the top surface of the copper thin film and the bottom surface of the nickel thin film are exposed to the graphene precursor, and performing chemical vapor deposition (CVD), thus synthesizing Bern al-stacked multilayer graphene on the top surface of the copper thin film, wherein during the synthesizing step of graphene, a nickel concentration gradient in the copper thin film is generated and a nickel concentration at the bottom surface of the copper thin film is higher than a nickel concentration at the top surface of the copper thin film as a part of nickel of the nickel thin film of the laminate is diffused to interior of the copper thin film, carbon atoms generated by a decomposition of the graphene precursor are subjected to surface-mediated reaction to form top-layer graphene of the Bernal-stacked multilayer graphene in the top surface of the copper thin film, the carbon atoms are absorbed to the bottom surface of the nickel thin film and a carbon concentration gradient is formed in the thickness direction of the Cu-Ni thin film laminate, the carbon atoms absorbed to the bottom surface of the nickel thin film are diffused by the carbon concentration gradient to the copper thin film along the thickness direction of the copper thin film such that the diffused carbon atoms reach the top surface of the copper thin film and form adlayer graphene enthrough surface-mediated reaction between the top-layer graphene and the top surface of the copper thin film, the chemical vapor deposition is performed at a temperature of 600 to 1,300 0 C, and a thickness or a number of layers of the graphene synthesized on the top surface of the copper thin film is controlled by adjusting a thickness of the nickel thin film of the laminate. Currently amended
The method of claim 1, wherein the nickel thin film has a thickness ranging from 5 to 1,000 nm. Original
The method of claim 1, wherein a number of layers of the graphene is any one ranging from -1 2 to 10. Currently amended
The method of claim 1, wherein a thickness of the nickel thin film is adjusted to a range of 1000 nm or less but exceeding 70 nm in step (a), whereby multilayer graphene is synthesized in step (b). Original
The method of claim 1, wherein the graphene precursor is a hydrocarbon compound. Original
The method of claim 1, wherein the chemical vapor deposition is performed by supplying the graphene precursor at a rate of 0.1 to 500 s c cm. Original
The method of claim 1, wherein the chemical vapor deposition is performed for 10 to 500 m in. Original
The method of claim 1, wherein the chemical vapor deposition is performed using any one process selected from the group consisting of low-pressure chemical vapor deposition, atmospheric-pressure chemical vapor deposition, plasma-enhanced chemical vapor deposition, Joule-heating chemical vapor deposition, and microwave chemical vapor deposition. Original
The method of claim 1, wherein the nickel thin film in step (a) is a nickel thin film having a pattern. Original
Canceled
Canceled
Canceled
Canceled
Canceled
A patterned graphene, comprising: a first graphene part including m graphene layers; a second graphene part, connected side by side to the first graphene part through covalent bonding, patterned, and configured to include m+n graphene layers, wherein m is any one integer of 1 to 5, and n is any one integer of 1 to 5. Withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
Cu-Ni thin film laminate for CVD graphene growth
patterned graphene
Materials described outside the worked examples.
Bernal-stacked multilayer graphene
nickel thin film
Ni
copper thin film
Cu
Cu-Ni thin film laminate
hydrocarbon compound (graphene precursor)
methane
CH₄
ethane
C₂H₆
propane
C₃H₈
butane
C₄H₁₀
ethylene
C₂H₄
propylene
C₃H₆
butylene
C₄H₈
benzene
C₆H₆
ethanol
C₂H₅OH
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 1 C and 1D respectively show the Raman I 2D/I G rati o map and the 2D FWH M map of graphene synthesized in Example 32, FIG. iE is an image showing the …
FIG. 2B is a graph showing the transmittance of graphene synthesized in Examples 3, 6 to 9, 12, 15 to 18, 22, 25 to 28, 32, and 35 to 38;
FIG. 3C is an image showing graphene of Example 32 transferred onto a silicon dioxide substrate, and
FIG. 3C is an image showing graphene of Example 32 transferred onto a silicon dioxide substrate, and
FIG. 4 is a graph showing the sheet resistance versus the transmittance of graphene synthesized in Examples 29 to 33 and graphene synthesized through a …
FIG. 4 is a graph showing the sheet resistance versus the transmittance of graphene synthesized in Examples 29 to 33 and graphene synthesized through a …
FIG. 5 D shows the SAED (Selective-Area Electron Diffraction) pattern and the intensity profile of synthesized graphene;
FIG. 5 D shows the SAED (Selective-Area Electron Diffraction) pattern and the intensity profile of synthesized graphene;
FIG. 6C is a graph showing the number of layers of synthesized graphene depending on the thickness of the nickel thin film over synthesis time, and
FIG. 6C is a graph showing the number of layers of synthesized graphene depending on the thickness of the nickel thin film over synthesis time, and
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 5–1000 nm | — |
Thickness | 50–300 nm | — |
Thickness | 10–70 nm | — |
Temperature | 600–1300 °C | — |
Temperature | 700–1300 °C | — |
Temperature | 850–1050 °C | — |
Flow Rate | 0.1–500 sccm | — |
Flow Rate | 10–500 sccm | — |
Duration | 10–500 min | — |
Thickness | ≥ 70 nm | — |
Table 1
1, with the exception that the conditions of Example 39 were used in lieu of the conditions of Example 1 of Table 1 below and that a nickel thin film having the pattern shown in FIG.
p. 9
Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 C and 1D respectively show the Raman I 2D/I G rati o map and the 2D FWH M map of graphene synthesized in Example 32, FIG. iE is an image showing the …
FIG. 2B is a graph showing the transmittance of graphene synthesized in Examples 3, 6 to 9, 12, 15 to 18, 22, 25 to 28, 32, and 35 to 38;
FIG. 3C is an image showing graphene of Example 32 transferred onto a silicon dioxide substrate, and
FIG. 4 is a graph showing the sheet resistance versus the transmittance of graphene synthesized in Examples 29 to 33 and graphene synthesized through a …
FIG. 5 D shows the SAED (Selective-Area Electron Diffraction) pattern and the intensity profile of synthesized graphene;
FIG. 6C is a graph showing the number of layers of synthesized graphene depending on the thickness of the nickel thin film over synthesis time, and
FIG. 7 shows the mechanism of growth of graphene using the Cu- Ni thin film laminate.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of synthesizing graphene, comprising: (a) placing a Cu-Ni thin film laminate including a copper thin film comprising a top surface and a bottom surface and a nickel thin film comprising a top surface and a bottom surface formed on the bottom surface of the copper thin film in a chemical vapor depositor; and (b) bringing a graphene precursor into contact with the Cu-Ni thin film laminate such that the top surface of the copper thin film and the bottom surface of the nickel thin film are exposed to the graphene precursor, and performing chemical vapor deposition (CVD), thus synthesizing Bern al-stacked multilayer graphene on the top surface of the copper thin film, wherein during the synthesizing step of graphene, a nickel concentration gradient in the copper thin film is generated and a nickel concentration at the bottom surface of the copper thin film is higher than a nickel concentration at the top surface of the copper thin film as a part of nickel of the nickel thin film of the laminate is diffused to interior of the copper thin film, carbon atoms generated by a decomposition of the graphene precursor are subjected to surface-mediated reaction to form top-layer graphene of the Bernal-stacked multilayer graphene in the top surface of the copper thin film, the carbon atoms are absorbed to the bottom surface of the nickel thin film and a carbon concentration gradient is formed in the thickness direction of the Cu-Ni thin film laminate, the carbon atoms absorbed to the bottom surface of the nickel thin film are diffused by the carbon concentration gradient to the copper thin film along the thickness direction of the copper thin film such that the diffused carbon atoms reach the top surface of the copper thin film and form adlayer graphene enthrough surface-mediated reaction between the top-layer graphene and the top surface of the copper thin film, the chemical vapor deposition is performed at a temperature of 600 to 1,300 0 C, and a thickness or a number of layers of the graphene synthesized on the top surface of the copper thin film is controlled by adjusting a thickness of the nickel thin film of the laminate. Currently amended
The method of claim 1, wherein the nickel thin film has a thickness ranging from 5 to 1,000 nm. Original
The method of claim 1, wherein a number of layers of the graphene is any one ranging from -1 2 to 10. Currently amended
The method of claim 1, wherein a thickness of the nickel thin film is adjusted to a range of 1000 nm or less but exceeding 70 nm in step (a), whereby multilayer graphene is synthesized in step (b). Original
The method of claim 1, wherein the graphene precursor is a hydrocarbon compound. Original
The method of claim 1, wherein the chemical vapor deposition is performed by supplying the graphene precursor at a rate of 0.1 to 500 s c cm. Original
The method of claim 1, wherein the chemical vapor deposition is performed for 10 to 500 m in. Original
The method of claim 1, wherein the chemical vapor deposition is performed using any one process selected from the group consisting of low-pressure chemical vapor deposition, atmospheric-pressure chemical vapor deposition, plasma-enhanced chemical vapor deposition, Joule-heating chemical vapor deposition, and microwave chemical vapor deposition. Original
The method of claim 1, wherein the nickel thin film in step (a) is a nickel thin film having a pattern. Original
Canceled
Canceled
Canceled
Canceled
Canceled
A patterned graphene, comprising: a first graphene part including m graphene layers; a second graphene part, connected side by side to the first graphene part through covalent bonding, patterned, and configured to include m+n graphene layers, wherein m is any one integer of 1 to 5, and n is any one integer of 1 to 5. Withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
Cu-Ni thin film laminate for CVD graphene growth
patterned graphene
Materials described outside the worked examples.
Bernal-stacked multilayer graphene
nickel thin film
Ni
copper thin film
Cu
Cu-Ni thin film laminate
hydrocarbon compound (graphene precursor)
methane
CH₄
ethane
C₂H₆
propane
C₃H₈
butane
C₄H₁₀
ethylene
C₂H₄
propylene
C₃H₆
butylene
C₄H₈
benzene
C₆H₆
ethanol
C₂H₅OH
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 1 C and 1D respectively show the Raman I 2D/I G rati o map and the 2D FWH M map of graphene synthesized in Example 32, FIG. iE is an image showing the …
FIG. 2B is a graph showing the transmittance of graphene synthesized in Examples 3, 6 to 9, 12, 15 to 18, 22, 25 to 28, 32, and 35 to 38;
FIG. 3C is an image showing graphene of Example 32 transferred onto a silicon dioxide substrate, and
FIG. 3C is an image showing graphene of Example 32 transferred onto a silicon dioxide substrate, and
FIG. 4 is a graph showing the sheet resistance versus the transmittance of graphene synthesized in Examples 29 to 33 and graphene synthesized through a …
FIG. 4 is a graph showing the sheet resistance versus the transmittance of graphene synthesized in Examples 29 to 33 and graphene synthesized through a …
FIG. 5 D shows the SAED (Selective-Area Electron Diffraction) pattern and the intensity profile of synthesized graphene;
FIG. 5 D shows the SAED (Selective-Area Electron Diffraction) pattern and the intensity profile of synthesized graphene;
FIG. 6C is a graph showing the number of layers of synthesized graphene depending on the thickness of the nickel thin film over synthesis time, and
FIG. 6C is a graph showing the number of layers of synthesized graphene depending on the thickness of the nickel thin film over synthesis time, and
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 5–1000 nm | — |
Thickness | 50–300 nm | — |
Thickness | 10–70 nm | — |
Temperature | 600–1300 °C | — |
Temperature | 700–1300 °C | — |
Temperature | 850–1050 °C | — |
Flow Rate | 0.1–500 sccm | — |
Flow Rate | 10–500 sccm | — |
Duration | 10–500 min | — |
Thickness | ≥ 70 nm | — |
Table 1
1, with the exception that the conditions of Example 39 were used in lieu of the conditions of Example 1 of Table 1 below and that a nickel thin film having the pattern shown in FIG.
p. 9