Patent
US 9,963,346SEAMLESS HEXAGONAL BORON NITRIDE ATOMIC MONOLAYER THIN FILM AND METHOD OF FABRICATING THE SAME
Hwansoo SUH
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,963,346Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates a flow chart of a method of fabricating a seamless hexagonal boron nitride atomic monolayer according to an exemplary embodiment; 6 [0041]
FIGS. 2A through 2D are microscope images of h-BN seeds formed on a metal thin film depending on the supply amount of hydrogen gas according to an exemplary …
FIG. 3 illustrates a graph showing the density of h-BN seeds depending on the supply amount of hydrogen gas according to an exemplary embodiment; [0043]
FIG. 4 illustrates a graph showing the aligning degree of h-BN seeds depending on the supply amount of hydrogen gas according to an exemplary embodiment; [0044]
FIG. 5 illustrates a microscope image of a h-BN thin film grown after 5 hours of thermal treatment according to an exemplary embodiment; [0045]
FIG. 6 illustrates a microscope image of a hydrogen etched h-BN thin film according to an exemplary embodiment; [0046]
FIG. 7 illustrates a transmission electron microscope (TEM) image of seamlessly merged h-BN grains respectively grown on copper thin film grains having a(001) …
FIG. 8 illustrates a TEM image showing a crystal direction of h-BN grains formed at a boundary of copper thin film grains, according to an exemplary embodiment.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
: A seamless hexagonal boron nitride (h-BN) atomic monolayer thin film having a pseudo-single crystal structure comprising a plurality of h-BN grains that are seamlessly merged, each of the plurality of h-BN grains having a dimension in a range from about 10 p m to about 1,000 pm. Withdrawn
: The seamless h-BN atomic monolayer thin film of claim 1, wherein the plurality of h-BN grains are grown from a plurality of h-BN seeds having gaps amongst one another, the gaps between the plurality of h-BN seeds ranging between about 10 p m and about 1,000 pm. Withdrawn
: The seamless h-BN atomic monolayer thin film of claim 1, wherein the h-BN atomic monolayer thin film made from the seamlessly merged plurality of h- BN grains has a dimension in a range from about 1 cm to 30 cm. Withdrawn
: The seamless h-BN atomic monolayer thin film of claim 1, wherein the h-BN atomic monolayer thin film is line defect-free at a grain boundary. Withdrawn
: The seamless h-BN atomic monolayer thin film of claim 1, further comprising a metal thin film provided on the h-BN atomic monolayer thin film, wherein the metal thin film comprises a plurality of metal thin film grains, each of the plurality of metal thin film grains having one of a plurality of crystal direction planes, the h-BN grains on respective one of the plurality of metal thin film grains have same crystalline direction and each of the plurality of h-BN grains on a grain boundary of the metal thin film has the same crystalline direction as a crystalline direction of the h-BN grains on one of the metal thin film grains contacting the grain boundary of the metal thin film. Withdrawn
: A method of fabricating a seamless hexagonal boron nitride (h-BN) atomic monolayer thin film, the method comprising: pre-annealing a metal thin film at a first temperature in a chamber while supplying hydrogen gas to the chamber; supplying nitrogen source gas and boron source gas to the chamber; and forming the seamless h-BN atomic monolayer thin film having a pseudosingle crystal atomic monolayer structure having a grain dimension in a range from about 10 p m to about 1,000 p m by annealing the pre-annealed metal thin film at a second temperature, wherein the forming the seamless h-BN atomic monolayer thin film further comprises: forming a plurality of h-BN seeds fo rm ed in gaps in a range from about 10 p m to about 1,000 p m amongst one another from the supplying nitrogen source gas and boron source gas to the chamber; growing a plurality of h-BN grains from the plurality of h-BN seeds; and AMENDMENT UNDER 37 C.F.R. § 1.111 Attorney Docket No.: Q₂₂₀₃₅₇ forming the seamless h-BN atomic monolayer thin film having the pseudo-single crystal structure by merging the plurality of h-BN grains, and supplying the hydrogen gas in an amount from 100 times to 200 times greater than amounts of the nitrogen source gas and the boron source gas. Currently amended
: The method of claim 6, wherein the pre-annealing and the forming of the h-BN atomic monolayer thin film are consecutively performed in the chamber. Original
: The method of claim 6, wherein the first temperature and the second temperature are substantially the same. Original
: The method of claim 6, further comprising polishing a first surface of the metal thin film before the pre-annealing the metal thin film. Original
: The method of claim 6, wherein the nitrogen source gas comprises at least one of NH 3 and N 2. Original
: The method of claim 6, wherein the boron source gas is at least one selected from the group consisting of BH 3, BF 3, BC l 3, B 2 H 6, (CH 3 CH 2) 3 B, and (CH 3) 3 B. Original
: The method of claim 6, wherein the nitrogen source gas and the boron source gas are supplied by at least one of ammonia borane and borazine. Original
: The method of claim 6, wherein the metal thin film comprises at least one of Ni, Co, Fe, Pt, Pd, A u, Al, Cr, Cu, Mg, Mn, Mo, Rh, Ta, Ti, W, U, V, or Zr. Original
9-11. Canceled
: The method of claim 9, wherein the seamless h-BN atomic monolayer thin film has a dimension in a range from about 1 cm to about 30 cm. Original
: The method of claim 9, wherein the h-BN atomic monolayer thin film is line defect-free at a grain boundary between the plurality of h-BN grains. Original
: The method of claim 9, wherein the metal thin film comprises a plurality of metal thin film grains, each of the plurality of metal thin film grains having one of a plurality of crystalline direction planes, the h-BN grains on respective one of the plurality of metal thin film grains have same crystalline direction and each of the plurality of h-BN grains on a grain AMENDMENT UNDER 37 C.F.R. § 1.111 Attorney Docket No.: Q₂₂₀₃₅₇ boundary of the metal thin film has the same crystalline direction as a crystalline direction of the h-BN grains on one of the metal thin film grains contacting the grain boundary of the metal thin film. Original
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
seamless h-BN atomic monolayer thin film on metal substrate
Materials described outside the worked examples.
hexagonal boron nitride atomic monolayer thin film
h-BN
metal thin film
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3 illustrates a graph showing the density of h-BN seeds depending on the supply amount of hydrogen gas according to an exemplary embodiment; [0043]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
h-BN band gap (background) | 5.9 eV | h-BN |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,963,346Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates a flow chart of a method of fabricating a seamless hexagonal boron nitride atomic monolayer according to an exemplary embodiment; 6 [0041]
FIGS. 2A through 2D are microscope images of h-BN seeds formed on a metal thin film depending on the supply amount of hydrogen gas according to an exemplary …
FIG. 3 illustrates a graph showing the density of h-BN seeds depending on the supply amount of hydrogen gas according to an exemplary embodiment; [0043]
FIG. 4 illustrates a graph showing the aligning degree of h-BN seeds depending on the supply amount of hydrogen gas according to an exemplary embodiment; [0044]
FIG. 5 illustrates a microscope image of a h-BN thin film grown after 5 hours of thermal treatment according to an exemplary embodiment; [0045]
FIG. 6 illustrates a microscope image of a hydrogen etched h-BN thin film according to an exemplary embodiment; [0046]
FIG. 7 illustrates a transmission electron microscope (TEM) image of seamlessly merged h-BN grains respectively grown on copper thin film grains having a(001) …
FIG. 8 illustrates a TEM image showing a crystal direction of h-BN grains formed at a boundary of copper thin film grains, according to an exemplary embodiment.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
: A seamless hexagonal boron nitride (h-BN) atomic monolayer thin film having a pseudo-single crystal structure comprising a plurality of h-BN grains that are seamlessly merged, each of the plurality of h-BN grains having a dimension in a range from about 10 p m to about 1,000 pm. Withdrawn
: The seamless h-BN atomic monolayer thin film of claim 1, wherein the plurality of h-BN grains are grown from a plurality of h-BN seeds having gaps amongst one another, the gaps between the plurality of h-BN seeds ranging between about 10 p m and about 1,000 pm. Withdrawn
: The seamless h-BN atomic monolayer thin film of claim 1, wherein the h-BN atomic monolayer thin film made from the seamlessly merged plurality of h- BN grains has a dimension in a range from about 1 cm to 30 cm. Withdrawn
: The seamless h-BN atomic monolayer thin film of claim 1, wherein the h-BN atomic monolayer thin film is line defect-free at a grain boundary. Withdrawn
: The seamless h-BN atomic monolayer thin film of claim 1, further comprising a metal thin film provided on the h-BN atomic monolayer thin film, wherein the metal thin film comprises a plurality of metal thin film grains, each of the plurality of metal thin film grains having one of a plurality of crystal direction planes, the h-BN grains on respective one of the plurality of metal thin film grains have same crystalline direction and each of the plurality of h-BN grains on a grain boundary of the metal thin film has the same crystalline direction as a crystalline direction of the h-BN grains on one of the metal thin film grains contacting the grain boundary of the metal thin film. Withdrawn
: A method of fabricating a seamless hexagonal boron nitride (h-BN) atomic monolayer thin film, the method comprising: pre-annealing a metal thin film at a first temperature in a chamber while supplying hydrogen gas to the chamber; supplying nitrogen source gas and boron source gas to the chamber; and forming the seamless h-BN atomic monolayer thin film having a pseudosingle crystal atomic monolayer structure having a grain dimension in a range from about 10 p m to about 1,000 p m by annealing the pre-annealed metal thin film at a second temperature, wherein the forming the seamless h-BN atomic monolayer thin film further comprises: forming a plurality of h-BN seeds fo rm ed in gaps in a range from about 10 p m to about 1,000 p m amongst one another from the supplying nitrogen source gas and boron source gas to the chamber; growing a plurality of h-BN grains from the plurality of h-BN seeds; and AMENDMENT UNDER 37 C.F.R. § 1.111 Attorney Docket No.: Q₂₂₀₃₅₇ forming the seamless h-BN atomic monolayer thin film having the pseudo-single crystal structure by merging the plurality of h-BN grains, and supplying the hydrogen gas in an amount from 100 times to 200 times greater than amounts of the nitrogen source gas and the boron source gas. Currently amended
: The method of claim 6, wherein the pre-annealing and the forming of the h-BN atomic monolayer thin film are consecutively performed in the chamber. Original
: The method of claim 6, wherein the first temperature and the second temperature are substantially the same. Original
: The method of claim 6, further comprising polishing a first surface of the metal thin film before the pre-annealing the metal thin film. Original
: The method of claim 6, wherein the nitrogen source gas comprises at least one of NH 3 and N 2. Original
: The method of claim 6, wherein the boron source gas is at least one selected from the group consisting of BH 3, BF 3, BC l 3, B 2 H 6, (CH 3 CH 2) 3 B, and (CH 3) 3 B. Original
: The method of claim 6, wherein the nitrogen source gas and the boron source gas are supplied by at least one of ammonia borane and borazine. Original
: The method of claim 6, wherein the metal thin film comprises at least one of Ni, Co, Fe, Pt, Pd, A u, Al, Cr, Cu, Mg, Mn, Mo, Rh, Ta, Ti, W, U, V, or Zr. Original
9-11. Canceled
: The method of claim 9, wherein the seamless h-BN atomic monolayer thin film has a dimension in a range from about 1 cm to about 30 cm. Original
: The method of claim 9, wherein the h-BN atomic monolayer thin film is line defect-free at a grain boundary between the plurality of h-BN grains. Original
: The method of claim 9, wherein the metal thin film comprises a plurality of metal thin film grains, each of the plurality of metal thin film grains having one of a plurality of crystalline direction planes, the h-BN grains on respective one of the plurality of metal thin film grains have same crystalline direction and each of the plurality of h-BN grains on a grain AMENDMENT UNDER 37 C.F.R. § 1.111 Attorney Docket No.: Q₂₂₀₃₅₇ boundary of the metal thin film has the same crystalline direction as a crystalline direction of the h-BN grains on one of the metal thin film grains contacting the grain boundary of the metal thin film. Original
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
seamless h-BN atomic monolayer thin film on metal substrate
Materials described outside the worked examples.
hexagonal boron nitride atomic monolayer thin film
h-BN
metal thin film
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3 illustrates a graph showing the density of h-BN seeds depending on the supply amount of hydrogen gas according to an exemplary embodiment; [0043]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
h-BN band gap (background) | 5.9 eV | h-BN |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,963,346Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates a flow chart of a method of fabricating a seamless hexagonal boron nitride atomic monolayer according to an exemplary embodiment; 6 [0041]
FIGS. 2A through 2D are microscope images of h-BN seeds formed on a metal thin film depending on the supply amount of hydrogen gas according to an exemplary …
FIG. 3 illustrates a graph showing the density of h-BN seeds depending on the supply amount of hydrogen gas according to an exemplary embodiment; [0043]
FIG. 4 illustrates a graph showing the aligning degree of h-BN seeds depending on the supply amount of hydrogen gas according to an exemplary embodiment; [0044]
FIG. 5 illustrates a microscope image of a h-BN thin film grown after 5 hours of thermal treatment according to an exemplary embodiment; [0045]
FIG. 6 illustrates a microscope image of a hydrogen etched h-BN thin film according to an exemplary embodiment; [0046]
FIG. 7 illustrates a transmission electron microscope (TEM) image of seamlessly merged h-BN grains respectively grown on copper thin film grains having a(001) …
FIG. 8 illustrates a TEM image showing a crystal direction of h-BN grains formed at a boundary of copper thin film grains, according to an exemplary embodiment.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
: A seamless hexagonal boron nitride (h-BN) atomic monolayer thin film having a pseudo-single crystal structure comprising a plurality of h-BN grains that are seamlessly merged, each of the plurality of h-BN grains having a dimension in a range from about 10 p m to about 1,000 pm. Withdrawn
: The seamless h-BN atomic monolayer thin film of claim 1, wherein the plurality of h-BN grains are grown from a plurality of h-BN seeds having gaps amongst one another, the gaps between the plurality of h-BN seeds ranging between about 10 p m and about 1,000 pm. Withdrawn
: The seamless h-BN atomic monolayer thin film of claim 1, wherein the h-BN atomic monolayer thin film made from the seamlessly merged plurality of h- BN grains has a dimension in a range from about 1 cm to 30 cm. Withdrawn
: The seamless h-BN atomic monolayer thin film of claim 1, wherein the h-BN atomic monolayer thin film is line defect-free at a grain boundary. Withdrawn
: The seamless h-BN atomic monolayer thin film of claim 1, further comprising a metal thin film provided on the h-BN atomic monolayer thin film, wherein the metal thin film comprises a plurality of metal thin film grains, each of the plurality of metal thin film grains having one of a plurality of crystal direction planes, the h-BN grains on respective one of the plurality of metal thin film grains have same crystalline direction and each of the plurality of h-BN grains on a grain boundary of the metal thin film has the same crystalline direction as a crystalline direction of the h-BN grains on one of the metal thin film grains contacting the grain boundary of the metal thin film. Withdrawn
: A method of fabricating a seamless hexagonal boron nitride (h-BN) atomic monolayer thin film, the method comprising: pre-annealing a metal thin film at a first temperature in a chamber while supplying hydrogen gas to the chamber; supplying nitrogen source gas and boron source gas to the chamber; and forming the seamless h-BN atomic monolayer thin film having a pseudosingle crystal atomic monolayer structure having a grain dimension in a range from about 10 p m to about 1,000 p m by annealing the pre-annealed metal thin film at a second temperature, wherein the forming the seamless h-BN atomic monolayer thin film further comprises: forming a plurality of h-BN seeds fo rm ed in gaps in a range from about 10 p m to about 1,000 p m amongst one another from the supplying nitrogen source gas and boron source gas to the chamber; growing a plurality of h-BN grains from the plurality of h-BN seeds; and AMENDMENT UNDER 37 C.F.R. § 1.111 Attorney Docket No.: Q₂₂₀₃₅₇ forming the seamless h-BN atomic monolayer thin film having the pseudo-single crystal structure by merging the plurality of h-BN grains, and supplying the hydrogen gas in an amount from 100 times to 200 times greater than amounts of the nitrogen source gas and the boron source gas. Currently amended
: The method of claim 6, wherein the pre-annealing and the forming of the h-BN atomic monolayer thin film are consecutively performed in the chamber. Original
: The method of claim 6, wherein the first temperature and the second temperature are substantially the same. Original
: The method of claim 6, further comprising polishing a first surface of the metal thin film before the pre-annealing the metal thin film. Original
: The method of claim 6, wherein the nitrogen source gas comprises at least one of NH 3 and N 2. Original
: The method of claim 6, wherein the boron source gas is at least one selected from the group consisting of BH 3, BF 3, BC l 3, B 2 H 6, (CH 3 CH 2) 3 B, and (CH 3) 3 B. Original
: The method of claim 6, wherein the nitrogen source gas and the boron source gas are supplied by at least one of ammonia borane and borazine. Original
: The method of claim 6, wherein the metal thin film comprises at least one of Ni, Co, Fe, Pt, Pd, A u, Al, Cr, Cu, Mg, Mn, Mo, Rh, Ta, Ti, W, U, V, or Zr. Original
9-11. Canceled
: The method of claim 9, wherein the seamless h-BN atomic monolayer thin film has a dimension in a range from about 1 cm to about 30 cm. Original
: The method of claim 9, wherein the h-BN atomic monolayer thin film is line defect-free at a grain boundary between the plurality of h-BN grains. Original
: The method of claim 9, wherein the metal thin film comprises a plurality of metal thin film grains, each of the plurality of metal thin film grains having one of a plurality of crystalline direction planes, the h-BN grains on respective one of the plurality of metal thin film grains have same crystalline direction and each of the plurality of h-BN grains on a grain AMENDMENT UNDER 37 C.F.R. § 1.111 Attorney Docket No.: Q₂₂₀₃₅₇ boundary of the metal thin film has the same crystalline direction as a crystalline direction of the h-BN grains on one of the metal thin film grains contacting the grain boundary of the metal thin film. Original
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
seamless h-BN atomic monolayer thin film on metal substrate
Materials described outside the worked examples.
hexagonal boron nitride atomic monolayer thin film
h-BN
metal thin film
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3 illustrates a graph showing the density of h-BN seeds depending on the supply amount of hydrogen gas according to an exemplary embodiment; [0043]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
h-BN band gap (background) | 5.9 eV | h-BN |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,963,346Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates a flow chart of a method of fabricating a seamless hexagonal boron nitride atomic monolayer according to an exemplary embodiment; 6 [0041]
FIGS. 2A through 2D are microscope images of h-BN seeds formed on a metal thin film depending on the supply amount of hydrogen gas according to an exemplary …
FIG. 3 illustrates a graph showing the density of h-BN seeds depending on the supply amount of hydrogen gas according to an exemplary embodiment; [0043]
FIG. 4 illustrates a graph showing the aligning degree of h-BN seeds depending on the supply amount of hydrogen gas according to an exemplary embodiment; [0044]
FIG. 5 illustrates a microscope image of a h-BN thin film grown after 5 hours of thermal treatment according to an exemplary embodiment; [0045]
FIG. 6 illustrates a microscope image of a hydrogen etched h-BN thin film according to an exemplary embodiment; [0046]
FIG. 7 illustrates a transmission electron microscope (TEM) image of seamlessly merged h-BN grains respectively grown on copper thin film grains having a(001) …
FIG. 8 illustrates a TEM image showing a crystal direction of h-BN grains formed at a boundary of copper thin film grains, according to an exemplary embodiment.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
: A seamless hexagonal boron nitride (h-BN) atomic monolayer thin film having a pseudo-single crystal structure comprising a plurality of h-BN grains that are seamlessly merged, each of the plurality of h-BN grains having a dimension in a range from about 10 p m to about 1,000 pm. Withdrawn
: The seamless h-BN atomic monolayer thin film of claim 1, wherein the plurality of h-BN grains are grown from a plurality of h-BN seeds having gaps amongst one another, the gaps between the plurality of h-BN seeds ranging between about 10 p m and about 1,000 pm. Withdrawn
: The seamless h-BN atomic monolayer thin film of claim 1, wherein the h-BN atomic monolayer thin film made from the seamlessly merged plurality of h- BN grains has a dimension in a range from about 1 cm to 30 cm. Withdrawn
: The seamless h-BN atomic monolayer thin film of claim 1, wherein the h-BN atomic monolayer thin film is line defect-free at a grain boundary. Withdrawn
: The seamless h-BN atomic monolayer thin film of claim 1, further comprising a metal thin film provided on the h-BN atomic monolayer thin film, wherein the metal thin film comprises a plurality of metal thin film grains, each of the plurality of metal thin film grains having one of a plurality of crystal direction planes, the h-BN grains on respective one of the plurality of metal thin film grains have same crystalline direction and each of the plurality of h-BN grains on a grain boundary of the metal thin film has the same crystalline direction as a crystalline direction of the h-BN grains on one of the metal thin film grains contacting the grain boundary of the metal thin film. Withdrawn
: A method of fabricating a seamless hexagonal boron nitride (h-BN) atomic monolayer thin film, the method comprising: pre-annealing a metal thin film at a first temperature in a chamber while supplying hydrogen gas to the chamber; supplying nitrogen source gas and boron source gas to the chamber; and forming the seamless h-BN atomic monolayer thin film having a pseudosingle crystal atomic monolayer structure having a grain dimension in a range from about 10 p m to about 1,000 p m by annealing the pre-annealed metal thin film at a second temperature, wherein the forming the seamless h-BN atomic monolayer thin film further comprises: forming a plurality of h-BN seeds fo rm ed in gaps in a range from about 10 p m to about 1,000 p m amongst one another from the supplying nitrogen source gas and boron source gas to the chamber; growing a plurality of h-BN grains from the plurality of h-BN seeds; and AMENDMENT UNDER 37 C.F.R. § 1.111 Attorney Docket No.: Q₂₂₀₃₅₇ forming the seamless h-BN atomic monolayer thin film having the pseudo-single crystal structure by merging the plurality of h-BN grains, and supplying the hydrogen gas in an amount from 100 times to 200 times greater than amounts of the nitrogen source gas and the boron source gas. Currently amended
: The method of claim 6, wherein the pre-annealing and the forming of the h-BN atomic monolayer thin film are consecutively performed in the chamber. Original
: The method of claim 6, wherein the first temperature and the second temperature are substantially the same. Original
: The method of claim 6, further comprising polishing a first surface of the metal thin film before the pre-annealing the metal thin film. Original
: The method of claim 6, wherein the nitrogen source gas comprises at least one of NH 3 and N 2. Original
: The method of claim 6, wherein the boron source gas is at least one selected from the group consisting of BH 3, BF 3, BC l 3, B 2 H 6, (CH 3 CH 2) 3 B, and (CH 3) 3 B. Original
: The method of claim 6, wherein the nitrogen source gas and the boron source gas are supplied by at least one of ammonia borane and borazine. Original
: The method of claim 6, wherein the metal thin film comprises at least one of Ni, Co, Fe, Pt, Pd, A u, Al, Cr, Cu, Mg, Mn, Mo, Rh, Ta, Ti, W, U, V, or Zr. Original
9-11. Canceled
: The method of claim 9, wherein the seamless h-BN atomic monolayer thin film has a dimension in a range from about 1 cm to about 30 cm. Original
: The method of claim 9, wherein the h-BN atomic monolayer thin film is line defect-free at a grain boundary between the plurality of h-BN grains. Original
: The method of claim 9, wherein the metal thin film comprises a plurality of metal thin film grains, each of the plurality of metal thin film grains having one of a plurality of crystalline direction planes, the h-BN grains on respective one of the plurality of metal thin film grains have same crystalline direction and each of the plurality of h-BN grains on a grain AMENDMENT UNDER 37 C.F.R. § 1.111 Attorney Docket No.: Q₂₂₀₃₅₇ boundary of the metal thin film has the same crystalline direction as a crystalline direction of the h-BN grains on one of the metal thin film grains contacting the grain boundary of the metal thin film. Original
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
seamless h-BN atomic monolayer thin film on metal substrate
Materials described outside the worked examples.
hexagonal boron nitride atomic monolayer thin film
h-BN
metal thin film
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3 illustrates a graph showing the density of h-BN seeds depending on the supply amount of hydrogen gas according to an exemplary embodiment; [0043]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
h-BN band gap (background) | 5.9 eV | h-BN |
Related documents with shared materials, methods, properties, or citations.
nitrogen source gas
boron source gas
ammonia borane or borazine
copper thin film
Cu
hydrogen gas
H₂
FIG. 4 illustrates a graph showing the aligning degree of h-BN seeds depending on the supply amount of hydrogen gas according to an exemplary embodiment; [0044]
FIG. 7 illustrates a transmission electron microscope (TEM) image of seamlessly merged h-BN grains respectively grown on copper thin film grains having a(001) …
FIG. 8 illustrates a TEM image showing a crystal direction of h-BN grains formed at a boundary of copper thin film grains, according to an exemplary embodiment.
| 1–30 cm |
| — |
Flow Rate | 5–40 sccm | — |
Thickness | ≥ 1 cm | — |
nitrogen source gas
boron source gas
ammonia borane or borazine
copper thin film
Cu
hydrogen gas
H₂
FIG. 4 illustrates a graph showing the aligning degree of h-BN seeds depending on the supply amount of hydrogen gas according to an exemplary embodiment; [0044]
FIG. 7 illustrates a transmission electron microscope (TEM) image of seamlessly merged h-BN grains respectively grown on copper thin film grains having a(001) …
FIG. 8 illustrates a TEM image showing a crystal direction of h-BN grains formed at a boundary of copper thin film grains, according to an exemplary embodiment.
| 1–30 cm |
| — |
Flow Rate | 5–40 sccm | — |
Thickness | ≥ 1 cm | — |
nitrogen source gas
boron source gas
ammonia borane or borazine
copper thin film
Cu
hydrogen gas
H₂
FIG. 4 illustrates a graph showing the aligning degree of h-BN seeds depending on the supply amount of hydrogen gas according to an exemplary embodiment; [0044]
FIG. 7 illustrates a transmission electron microscope (TEM) image of seamlessly merged h-BN grains respectively grown on copper thin film grains having a(001) …
FIG. 8 illustrates a TEM image showing a crystal direction of h-BN grains formed at a boundary of copper thin film grains, according to an exemplary embodiment.
| 1–30 cm |
| — |
Flow Rate | 5–40 sccm | — |
Thickness | ≥ 1 cm | — |
nitrogen source gas
boron source gas
ammonia borane or borazine
copper thin film
Cu
hydrogen gas
H₂
FIG. 4 illustrates a graph showing the aligning degree of h-BN seeds depending on the supply amount of hydrogen gas according to an exemplary embodiment; [0044]
FIG. 7 illustrates a transmission electron microscope (TEM) image of seamlessly merged h-BN grains respectively grown on copper thin film grains having a(001) …
FIG. 8 illustrates a TEM image showing a crystal direction of h-BN grains formed at a boundary of copper thin film grains, according to an exemplary embodiment.
| 1–30 cm |
| — |
Flow Rate | 5–40 sccm | — |
Thickness | ≥ 1 cm | — |