Patent
US 10,604,844GRAPHENE PRODUCTION USING PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION
Zhihong Chen
US
Copyright © 2026 Matter42. All rights reserved.
Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic of a plasma-enhanced chemical vapor deposition (P EC VD) chamber according to the present disclosure. [0011]
FIG. 2 is a perspective view of a dielectric substrate. according to the present disclosure. [0012]
FIG. 3 is a perspective view of a substrate/cobalt layer, according to the present disclosure. [0013]
FIG. 4 is a perspective view of a substrate/cobalt/carbon atoms, according to the present disclosure. [0014]
FIG. 5 is a perspective view of a combination according to the present disclosure including grown graphene on a substrate. [0015]
FIG. 6 is a perspective view of a substrate/graphene after etching of the top graphene and cobalt layer, according to the present disclosure. [0016]
FIG. 7 is a graph of intensity vs. Raman shift to show evidence of graphene growth on SiO 2 at a first exemplary temperature (abo u t 460 ° C). [0017]
FIG. 8 is a graph of intensity vs. Raman shift to show evidence of graphene growth on SiO 2 at a second exemplary temperature (about 400 ° C). [0018]
FIG. 9 is a graph of intensity vs. Raman shift to show evidence of graphene growth on low- k dielectric at an exemplary temperature of about 460 0 C. [0019]
FIG. 10 is a graph of graphene growth rate (thickness in nm vs. time in minutes) for graphene growth on 8 nm cobalt deposited by E-beam evaporation vs. 12 nm …
FIG. 11 is a graph of intensity vs. Raman shift to show evidence of graphene growth using A l 2 3/Co as a sacrificial layer at a first exemplary temperature …
FIG. 12 is a graph of intensity vs. Raman shift to show evidence of graphene growth using A 1203/Co as a sacrificial layer at a second exemplary temperature …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of low-temperature growing graphene on a substrate, comprising: placing a substrate with a layer of cobalt deposited thereon in a plasma enhanced chemical vapor deposition (P EC VD) chamber; providing a carbon precursor gas to the PECVD chamber; generating plasma at between 315 ° C and 385 ° C to decompose the carbon precursor gas to thereby deposit carbon atoms on the cobalt layer, enabling a plurality of carbon atoms to diffuse through the cobalt layer thereby growing graphene on top of the cobalt layer and in between the substrate and the cobalt layer; removing carbon atoms from top of the cobalt layer; removing the cobalt layer; and wherein the layer of cobalt is annealed after deposition prior to placement in the PECVD chamber. Currently amended
The method of claim 1, wherein the substrate is dielectric. Original
The method of claim 1, wherein the cobalt layer is deposited on the substrate using one or more of dicobalt carbonyl [C o 2(CO) s], cobalt acetylacetonate [Co(CH 3 COC HCOCH 3) 2], b is cyclopentadienyl cobalt [(C₅H 5) 2 Co], cobalt tricarbonyl nitrosyl [Co(CO) 3 N O], cyclopentadienyl cobalt dicarbonyl [C 5 H 5 CO(CO) 2], and tetracobalt dodecacarbonyl [C o 4(CO) 1 2]. Previously presented
The method of claim 1, wherein the annealing process includes rapid thermal annealing. Previously presented
The method of claim 1, wherein the carbon precursor gas includes one or more of methane (CH 4) or acetylene (C 2 H 2), and ethylene (C 2 H 4). Original
The method of claim 1, wherein the removing of carbon atoms from top of the cobalt layer includes etching at room temperature. Original
The method of claim 1, wherein the removing of the cobalt layer includes etching. Original
The method of claim 1, wherein the layer of cobalt deposited on the substrate is substituted with a layer of Ni. Original
The method of claim [[4]] 1, wherein the deposition process of the cobalt layer on the substrate includes physical vapor deposition. Currently amended
The method of claim 5, wherein the process is sputtering. Original
The method of claim [[5]] 1, wherein the deposition process of the cobalt layer on the substrate includes e-beam evaporation. Currently amended
The method of claim 8, wherein thickness of the cobalt layer ranges from about 5 nm to about 20 nm and the grain boundaries are substantially zero. Original
Canceled
Materials described outside the worked examples.
graphene
C
cobalt
Co
carbon precursor gas
dielectric substrate
silicon
Si
silicon dioxide
SiO₂
quartz
magnesium fluoride
MgF₂
calcium fluoride
CaF₂
aluminum fluoride
AlF₃
tantalum pentoxide
Ta₂O₅
hafnium oxide
HfO₂
zirconium oxide
ZrO₂
yttrium oxide
Y₂O₃
scandium oxide
Sc₂O₃
boron nitride
BN
molybdenum disulfide
MoS₂
tungsten diselenide
WSe₂
tungsten disulfide
WS₂
mica
glass
dicobalt carbonyl
Co₂(CO)8
cobalt acetylacetonate
Co(CH₃COCHCOCH₃)2
bis(cyclopentadienyl) cobalt
(C₅H₅)2Co
cobalt tricarbonyl nitrosyl
Co(CO)3NO
cyclopentadienyl cobalt dicarbonyl
C₅H₅Co(CO)2
tetracobalt dodecacarbonyl
Co₄(CO)12
methane
CH₄
acetylene
C₂H₂
ethylene
C₂H₄
iron(III) chloride
FeCl₃
iron(III) sulfate
Fe₂(SO₄)3
iron(III) sulfamate
Fe(SO₃NH₂)3
iron mesylate
Fe(SO₃CH₃)3
copper(II) chloride
CuCl₂
potassium permanganate
KMnO₄
copper sulfate
CuSO₄
nickel
Ni
hydrogen
H₂
argon
Ar
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 7 is a graph of intensity vs. Raman shift to show evidence of graphene growth on SiO 2 at a first exemplary temperature (abo u t 460 ° C). [0017]
FIG. 7 is a graph of intensity vs. Raman shift to show evidence of graphene growth on SiO 2 at a first exemplary temperature (abo u t 460 ° C). [0017]
FIG. 8 is a graph of intensity vs. Raman shift to show evidence of graphene growth on SiO 2 at a second exemplary temperature (about 400 ° C). [0018]
FIG. 8 is a graph of intensity vs. Raman shift to show evidence of graphene growth on SiO 2 at a second exemplary temperature (about 400 ° C). [0018]
FIG. 9 is a graph of intensity vs. Raman shift to show evidence of graphene growth on low- k dielectric at an exemplary temperature of about 460 0 C. [0019]
FIG. 9 is a graph of intensity vs. Raman shift to show evidence of graphene growth on low- k dielectric at an exemplary temperature of about 460 0 C. [0019]
FIG. 10 is a graph of graphene growth rate (thickness in nm vs. time in minutes) for graphene growth on 8 nm cobalt deposited by E-beam evaporation vs. 12 nm …
FIG. 10 is a graph of graphene growth rate (thickness in nm vs. time in minutes) for graphene growth on 8 nm cobalt deposited by E-beam evaporation vs. 12 nm …
FIG. 11 is a graph of intensity vs. Raman shift to show evidence of graphene growth using A l 2 3/Co as a sacrificial layer at a first exemplary temperature …
FIG. 11 is a graph of intensity vs. Raman shift to show evidence of graphene growth using A l 2 3/Co as a sacrificial layer at a first exemplary temperature …
FIG. 12 is a graph of intensity vs. Raman shift to show evidence of graphene growth using A 1203/Co as a sacrificial layer at a second exemplary temperature …
FIG. 12 is a graph of intensity vs. Raman shift to show evidence of graphene growth using A 1203/Co as a sacrificial layer at a second exemplary temperature …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
cobalt layer thickness (e-beam evaporation) | 5–20 nm | Co |
cobalt layer thickness (e-beam evaporation, narrower range) | 6–18 nm | Co |
cobalt layer thickness (sputtering) | 5–500 nm | Co |
cobalt grain size (sputtering) | 1–100 nm | Co |
Temperature | 350–800 °C | — |
Pressure | 5–100 mtorr | — |
Pressure | 5–600 mtorr | — |
Duration | 5–15 minutes | — |
Thickness | 1–5 nm | — |
Duration | 1–5 hours | — |
Thickness | ≤ 30 nm | — |
Temperature | 315–385 °C | — |
Related documents with shared materials, methods, properties, or citations.
SINGLE CRYSTALLINE GRAPHENE SHEET AND PROCESS OF PREPARING THE SAME
GRAPHENE WIRING STRUCTURE AND MANUFACTURING METHOD THEREOF
Method for Growing High-Quality Graphene Layer
GRAPHENE PRODUCTION PROCESS
ELECTRONIC DEVICE HAVING GRAPHENE-SEMICONDUCTOR MULTI-JUNCTION AND METHOD OF MANUFACTURING THE ELECTRONIC DEVICE
METHOD OF SYNTHESIZING THICKNESS-CONTROLLED GRAPHENE THROUGH CHEMICAL VAPOR DEPOSITION USING CU-NI THIN FILM LAMINATE
ELECTROWETTING ON DIELECTRIC USING GRAPHENE
METHOD OF FABRICATING HEXAGONAL BORON NITRIDE
GRAPHENE BASED FIELD EFFECT TRANSISTOR
METHOD OF MANUFACTURING GRAPHENE SUBSTRATE, AND GRAPHENE SUBSTRATE
Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic of a plasma-enhanced chemical vapor deposition (P EC VD) chamber according to the present disclosure. [0011]
FIG. 2 is a perspective view of a dielectric substrate. according to the present disclosure. [0012]
FIG. 3 is a perspective view of a substrate/cobalt layer, according to the present disclosure. [0013]
FIG. 4 is a perspective view of a substrate/cobalt/carbon atoms, according to the present disclosure. [0014]
FIG. 5 is a perspective view of a combination according to the present disclosure including grown graphene on a substrate. [0015]
FIG. 6 is a perspective view of a substrate/graphene after etching of the top graphene and cobalt layer, according to the present disclosure. [0016]
FIG. 7 is a graph of intensity vs. Raman shift to show evidence of graphene growth on SiO 2 at a first exemplary temperature (abo u t 460 ° C). [0017]
FIG. 8 is a graph of intensity vs. Raman shift to show evidence of graphene growth on SiO 2 at a second exemplary temperature (about 400 ° C). [0018]
FIG. 9 is a graph of intensity vs. Raman shift to show evidence of graphene growth on low- k dielectric at an exemplary temperature of about 460 0 C. [0019]
FIG. 10 is a graph of graphene growth rate (thickness in nm vs. time in minutes) for graphene growth on 8 nm cobalt deposited by E-beam evaporation vs. 12 nm …
FIG. 11 is a graph of intensity vs. Raman shift to show evidence of graphene growth using A l 2 3/Co as a sacrificial layer at a first exemplary temperature …
FIG. 12 is a graph of intensity vs. Raman shift to show evidence of graphene growth using A 1203/Co as a sacrificial layer at a second exemplary temperature …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of low-temperature growing graphene on a substrate, comprising: placing a substrate with a layer of cobalt deposited thereon in a plasma enhanced chemical vapor deposition (P EC VD) chamber; providing a carbon precursor gas to the PECVD chamber; generating plasma at between 315 ° C and 385 ° C to decompose the carbon precursor gas to thereby deposit carbon atoms on the cobalt layer, enabling a plurality of carbon atoms to diffuse through the cobalt layer thereby growing graphene on top of the cobalt layer and in between the substrate and the cobalt layer; removing carbon atoms from top of the cobalt layer; removing the cobalt layer; and wherein the layer of cobalt is annealed after deposition prior to placement in the PECVD chamber. Currently amended
The method of claim 1, wherein the substrate is dielectric. Original
The method of claim 1, wherein the cobalt layer is deposited on the substrate using one or more of dicobalt carbonyl [C o 2(CO) s], cobalt acetylacetonate [Co(CH 3 COC HCOCH 3) 2], b is cyclopentadienyl cobalt [(C₅H 5) 2 Co], cobalt tricarbonyl nitrosyl [Co(CO) 3 N O], cyclopentadienyl cobalt dicarbonyl [C 5 H 5 CO(CO) 2], and tetracobalt dodecacarbonyl [C o 4(CO) 1 2]. Previously presented
The method of claim 1, wherein the annealing process includes rapid thermal annealing. Previously presented
The method of claim 1, wherein the carbon precursor gas includes one or more of methane (CH 4) or acetylene (C 2 H 2), and ethylene (C 2 H 4). Original
The method of claim 1, wherein the removing of carbon atoms from top of the cobalt layer includes etching at room temperature. Original
The method of claim 1, wherein the removing of the cobalt layer includes etching. Original
The method of claim 1, wherein the layer of cobalt deposited on the substrate is substituted with a layer of Ni. Original
The method of claim [[4]] 1, wherein the deposition process of the cobalt layer on the substrate includes physical vapor deposition. Currently amended
The method of claim 5, wherein the process is sputtering. Original
The method of claim [[5]] 1, wherein the deposition process of the cobalt layer on the substrate includes e-beam evaporation. Currently amended
The method of claim 8, wherein thickness of the cobalt layer ranges from about 5 nm to about 20 nm and the grain boundaries are substantially zero. Original
Canceled
Materials described outside the worked examples.
graphene
C
cobalt
Co
carbon precursor gas
dielectric substrate
silicon
Si
silicon dioxide
SiO₂
quartz
magnesium fluoride
MgF₂
calcium fluoride
CaF₂
aluminum fluoride
AlF₃
tantalum pentoxide
Ta₂O₅
hafnium oxide
HfO₂
zirconium oxide
ZrO₂
yttrium oxide
Y₂O₃
scandium oxide
Sc₂O₃
boron nitride
BN
molybdenum disulfide
MoS₂
tungsten diselenide
WSe₂
tungsten disulfide
WS₂
mica
glass
dicobalt carbonyl
Co₂(CO)8
cobalt acetylacetonate
Co(CH₃COCHCOCH₃)2
bis(cyclopentadienyl) cobalt
(C₅H₅)2Co
cobalt tricarbonyl nitrosyl
Co(CO)3NO
cyclopentadienyl cobalt dicarbonyl
C₅H₅Co(CO)2
tetracobalt dodecacarbonyl
Co₄(CO)12
methane
CH₄
acetylene
C₂H₂
ethylene
C₂H₄
iron(III) chloride
FeCl₃
iron(III) sulfate
Fe₂(SO₄)3
iron(III) sulfamate
Fe(SO₃NH₂)3
iron mesylate
Fe(SO₃CH₃)3
copper(II) chloride
CuCl₂
potassium permanganate
KMnO₄
copper sulfate
CuSO₄
nickel
Ni
hydrogen
H₂
argon
Ar
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 7 is a graph of intensity vs. Raman shift to show evidence of graphene growth on SiO 2 at a first exemplary temperature (abo u t 460 ° C). [0017]
FIG. 7 is a graph of intensity vs. Raman shift to show evidence of graphene growth on SiO 2 at a first exemplary temperature (abo u t 460 ° C). [0017]
FIG. 8 is a graph of intensity vs. Raman shift to show evidence of graphene growth on SiO 2 at a second exemplary temperature (about 400 ° C). [0018]
FIG. 8 is a graph of intensity vs. Raman shift to show evidence of graphene growth on SiO 2 at a second exemplary temperature (about 400 ° C). [0018]
FIG. 9 is a graph of intensity vs. Raman shift to show evidence of graphene growth on low- k dielectric at an exemplary temperature of about 460 0 C. [0019]
FIG. 9 is a graph of intensity vs. Raman shift to show evidence of graphene growth on low- k dielectric at an exemplary temperature of about 460 0 C. [0019]
FIG. 10 is a graph of graphene growth rate (thickness in nm vs. time in minutes) for graphene growth on 8 nm cobalt deposited by E-beam evaporation vs. 12 nm …
FIG. 10 is a graph of graphene growth rate (thickness in nm vs. time in minutes) for graphene growth on 8 nm cobalt deposited by E-beam evaporation vs. 12 nm …
FIG. 11 is a graph of intensity vs. Raman shift to show evidence of graphene growth using A l 2 3/Co as a sacrificial layer at a first exemplary temperature …
FIG. 11 is a graph of intensity vs. Raman shift to show evidence of graphene growth using A l 2 3/Co as a sacrificial layer at a first exemplary temperature …
FIG. 12 is a graph of intensity vs. Raman shift to show evidence of graphene growth using A 1203/Co as a sacrificial layer at a second exemplary temperature …
FIG. 12 is a graph of intensity vs. Raman shift to show evidence of graphene growth using A 1203/Co as a sacrificial layer at a second exemplary temperature …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
cobalt layer thickness (e-beam evaporation) | 5–20 nm | Co |
cobalt layer thickness (e-beam evaporation, narrower range) | 6–18 nm | Co |
cobalt layer thickness (sputtering) | 5–500 nm | Co |
cobalt grain size (sputtering) | 1–100 nm | Co |
Temperature | 350–800 °C | — |
Pressure | 5–100 mtorr | — |
Pressure | 5–600 mtorr | — |
Duration | 5–15 minutes | — |
Thickness | 1–5 nm | — |
Duration | 1–5 hours | — |
Thickness | ≤ 30 nm | — |
Temperature | 315–385 °C | — |
Related documents with shared materials, methods, properties, or citations.
SINGLE CRYSTALLINE GRAPHENE SHEET AND PROCESS OF PREPARING THE SAME
GRAPHENE WIRING STRUCTURE AND MANUFACTURING METHOD THEREOF
Method for Growing High-Quality Graphene Layer
GRAPHENE PRODUCTION PROCESS
ELECTRONIC DEVICE HAVING GRAPHENE-SEMICONDUCTOR MULTI-JUNCTION AND METHOD OF MANUFACTURING THE ELECTRONIC DEVICE
METHOD OF SYNTHESIZING THICKNESS-CONTROLLED GRAPHENE THROUGH CHEMICAL VAPOR DEPOSITION USING CU-NI THIN FILM LAMINATE
ELECTROWETTING ON DIELECTRIC USING GRAPHENE
METHOD OF FABRICATING HEXAGONAL BORON NITRIDE
GRAPHENE BASED FIELD EFFECT TRANSISTOR
METHOD OF MANUFACTURING GRAPHENE SUBSTRATE, AND GRAPHENE SUBSTRATE
Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic of a plasma-enhanced chemical vapor deposition (P EC VD) chamber according to the present disclosure. [0011]
FIG. 2 is a perspective view of a dielectric substrate. according to the present disclosure. [0012]
FIG. 3 is a perspective view of a substrate/cobalt layer, according to the present disclosure. [0013]
FIG. 4 is a perspective view of a substrate/cobalt/carbon atoms, according to the present disclosure. [0014]
FIG. 5 is a perspective view of a combination according to the present disclosure including grown graphene on a substrate. [0015]
FIG. 6 is a perspective view of a substrate/graphene after etching of the top graphene and cobalt layer, according to the present disclosure. [0016]
FIG. 7 is a graph of intensity vs. Raman shift to show evidence of graphene growth on SiO 2 at a first exemplary temperature (abo u t 460 ° C). [0017]
FIG. 8 is a graph of intensity vs. Raman shift to show evidence of graphene growth on SiO 2 at a second exemplary temperature (about 400 ° C). [0018]
FIG. 9 is a graph of intensity vs. Raman shift to show evidence of graphene growth on low- k dielectric at an exemplary temperature of about 460 0 C. [0019]
FIG. 10 is a graph of graphene growth rate (thickness in nm vs. time in minutes) for graphene growth on 8 nm cobalt deposited by E-beam evaporation vs. 12 nm …
FIG. 11 is a graph of intensity vs. Raman shift to show evidence of graphene growth using A l 2 3/Co as a sacrificial layer at a first exemplary temperature …
FIG. 12 is a graph of intensity vs. Raman shift to show evidence of graphene growth using A 1203/Co as a sacrificial layer at a second exemplary temperature …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of low-temperature growing graphene on a substrate, comprising: placing a substrate with a layer of cobalt deposited thereon in a plasma enhanced chemical vapor deposition (P EC VD) chamber; providing a carbon precursor gas to the PECVD chamber; generating plasma at between 315 ° C and 385 ° C to decompose the carbon precursor gas to thereby deposit carbon atoms on the cobalt layer, enabling a plurality of carbon atoms to diffuse through the cobalt layer thereby growing graphene on top of the cobalt layer and in between the substrate and the cobalt layer; removing carbon atoms from top of the cobalt layer; removing the cobalt layer; and wherein the layer of cobalt is annealed after deposition prior to placement in the PECVD chamber. Currently amended
The method of claim 1, wherein the substrate is dielectric. Original
The method of claim 1, wherein the cobalt layer is deposited on the substrate using one or more of dicobalt carbonyl [C o 2(CO) s], cobalt acetylacetonate [Co(CH 3 COC HCOCH 3) 2], b is cyclopentadienyl cobalt [(C₅H 5) 2 Co], cobalt tricarbonyl nitrosyl [Co(CO) 3 N O], cyclopentadienyl cobalt dicarbonyl [C 5 H 5 CO(CO) 2], and tetracobalt dodecacarbonyl [C o 4(CO) 1 2]. Previously presented
The method of claim 1, wherein the annealing process includes rapid thermal annealing. Previously presented
The method of claim 1, wherein the carbon precursor gas includes one or more of methane (CH 4) or acetylene (C 2 H 2), and ethylene (C 2 H 4). Original
The method of claim 1, wherein the removing of carbon atoms from top of the cobalt layer includes etching at room temperature. Original
The method of claim 1, wherein the removing of the cobalt layer includes etching. Original
The method of claim 1, wherein the layer of cobalt deposited on the substrate is substituted with a layer of Ni. Original
The method of claim [[4]] 1, wherein the deposition process of the cobalt layer on the substrate includes physical vapor deposition. Currently amended
The method of claim 5, wherein the process is sputtering. Original
The method of claim [[5]] 1, wherein the deposition process of the cobalt layer on the substrate includes e-beam evaporation. Currently amended
The method of claim 8, wherein thickness of the cobalt layer ranges from about 5 nm to about 20 nm and the grain boundaries are substantially zero. Original
Canceled
Materials described outside the worked examples.
graphene
C
cobalt
Co
carbon precursor gas
dielectric substrate
silicon
Si
silicon dioxide
SiO₂
quartz
magnesium fluoride
MgF₂
calcium fluoride
CaF₂
aluminum fluoride
AlF₃
tantalum pentoxide
Ta₂O₅
hafnium oxide
HfO₂
zirconium oxide
ZrO₂
yttrium oxide
Y₂O₃
scandium oxide
Sc₂O₃
boron nitride
BN
molybdenum disulfide
MoS₂
tungsten diselenide
WSe₂
tungsten disulfide
WS₂
mica
glass
dicobalt carbonyl
Co₂(CO)8
cobalt acetylacetonate
Co(CH₃COCHCOCH₃)2
bis(cyclopentadienyl) cobalt
(C₅H₅)2Co
cobalt tricarbonyl nitrosyl
Co(CO)3NO
cyclopentadienyl cobalt dicarbonyl
C₅H₅Co(CO)2
tetracobalt dodecacarbonyl
Co₄(CO)12
methane
CH₄
acetylene
C₂H₂
ethylene
C₂H₄
iron(III) chloride
FeCl₃
iron(III) sulfate
Fe₂(SO₄)3
iron(III) sulfamate
Fe(SO₃NH₂)3
iron mesylate
Fe(SO₃CH₃)3
copper(II) chloride
CuCl₂
potassium permanganate
KMnO₄
copper sulfate
CuSO₄
nickel
Ni
hydrogen
H₂
argon
Ar
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 7 is a graph of intensity vs. Raman shift to show evidence of graphene growth on SiO 2 at a first exemplary temperature (abo u t 460 ° C). [0017]
FIG. 7 is a graph of intensity vs. Raman shift to show evidence of graphene growth on SiO 2 at a first exemplary temperature (abo u t 460 ° C). [0017]
FIG. 8 is a graph of intensity vs. Raman shift to show evidence of graphene growth on SiO 2 at a second exemplary temperature (about 400 ° C). [0018]
FIG. 8 is a graph of intensity vs. Raman shift to show evidence of graphene growth on SiO 2 at a second exemplary temperature (about 400 ° C). [0018]
FIG. 9 is a graph of intensity vs. Raman shift to show evidence of graphene growth on low- k dielectric at an exemplary temperature of about 460 0 C. [0019]
FIG. 9 is a graph of intensity vs. Raman shift to show evidence of graphene growth on low- k dielectric at an exemplary temperature of about 460 0 C. [0019]
FIG. 10 is a graph of graphene growth rate (thickness in nm vs. time in minutes) for graphene growth on 8 nm cobalt deposited by E-beam evaporation vs. 12 nm …
FIG. 10 is a graph of graphene growth rate (thickness in nm vs. time in minutes) for graphene growth on 8 nm cobalt deposited by E-beam evaporation vs. 12 nm …
FIG. 11 is a graph of intensity vs. Raman shift to show evidence of graphene growth using A l 2 3/Co as a sacrificial layer at a first exemplary temperature …
FIG. 11 is a graph of intensity vs. Raman shift to show evidence of graphene growth using A l 2 3/Co as a sacrificial layer at a first exemplary temperature …
FIG. 12 is a graph of intensity vs. Raman shift to show evidence of graphene growth using A 1203/Co as a sacrificial layer at a second exemplary temperature …
FIG. 12 is a graph of intensity vs. Raman shift to show evidence of graphene growth using A 1203/Co as a sacrificial layer at a second exemplary temperature …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
cobalt layer thickness (e-beam evaporation) | 5–20 nm | Co |
cobalt layer thickness (e-beam evaporation, narrower range) | 6–18 nm | Co |
cobalt layer thickness (sputtering) | 5–500 nm | Co |
cobalt grain size (sputtering) | 1–100 nm | Co |
Temperature | 350–800 °C | — |
Pressure | 5–100 mtorr | — |
Pressure | 5–600 mtorr | — |
Duration | 5–15 minutes | — |
Thickness | 1–5 nm | — |
Duration | 1–5 hours | — |
Thickness | ≤ 30 nm | — |
Temperature | 315–385 °C | — |
Related documents with shared materials, methods, properties, or citations.
SINGLE CRYSTALLINE GRAPHENE SHEET AND PROCESS OF PREPARING THE SAME
GRAPHENE WIRING STRUCTURE AND MANUFACTURING METHOD THEREOF
Method for Growing High-Quality Graphene Layer
GRAPHENE PRODUCTION PROCESS
ELECTRONIC DEVICE HAVING GRAPHENE-SEMICONDUCTOR MULTI-JUNCTION AND METHOD OF MANUFACTURING THE ELECTRONIC DEVICE
METHOD OF SYNTHESIZING THICKNESS-CONTROLLED GRAPHENE THROUGH CHEMICAL VAPOR DEPOSITION USING CU-NI THIN FILM LAMINATE
ELECTROWETTING ON DIELECTRIC USING GRAPHENE
METHOD OF FABRICATING HEXAGONAL BORON NITRIDE
GRAPHENE BASED FIELD EFFECT TRANSISTOR
METHOD OF MANUFACTURING GRAPHENE SUBSTRATE, AND GRAPHENE SUBSTRATE
Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic of a plasma-enhanced chemical vapor deposition (P EC VD) chamber according to the present disclosure. [0011]
FIG. 2 is a perspective view of a dielectric substrate. according to the present disclosure. [0012]
FIG. 3 is a perspective view of a substrate/cobalt layer, according to the present disclosure. [0013]
FIG. 4 is a perspective view of a substrate/cobalt/carbon atoms, according to the present disclosure. [0014]
FIG. 5 is a perspective view of a combination according to the present disclosure including grown graphene on a substrate. [0015]
FIG. 6 is a perspective view of a substrate/graphene after etching of the top graphene and cobalt layer, according to the present disclosure. [0016]
FIG. 7 is a graph of intensity vs. Raman shift to show evidence of graphene growth on SiO 2 at a first exemplary temperature (abo u t 460 ° C). [0017]
FIG. 8 is a graph of intensity vs. Raman shift to show evidence of graphene growth on SiO 2 at a second exemplary temperature (about 400 ° C). [0018]
FIG. 9 is a graph of intensity vs. Raman shift to show evidence of graphene growth on low- k dielectric at an exemplary temperature of about 460 0 C. [0019]
FIG. 10 is a graph of graphene growth rate (thickness in nm vs. time in minutes) for graphene growth on 8 nm cobalt deposited by E-beam evaporation vs. 12 nm …
FIG. 11 is a graph of intensity vs. Raman shift to show evidence of graphene growth using A l 2 3/Co as a sacrificial layer at a first exemplary temperature …
FIG. 12 is a graph of intensity vs. Raman shift to show evidence of graphene growth using A 1203/Co as a sacrificial layer at a second exemplary temperature …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of low-temperature growing graphene on a substrate, comprising: placing a substrate with a layer of cobalt deposited thereon in a plasma enhanced chemical vapor deposition (P EC VD) chamber; providing a carbon precursor gas to the PECVD chamber; generating plasma at between 315 ° C and 385 ° C to decompose the carbon precursor gas to thereby deposit carbon atoms on the cobalt layer, enabling a plurality of carbon atoms to diffuse through the cobalt layer thereby growing graphene on top of the cobalt layer and in between the substrate and the cobalt layer; removing carbon atoms from top of the cobalt layer; removing the cobalt layer; and wherein the layer of cobalt is annealed after deposition prior to placement in the PECVD chamber. Currently amended
The method of claim 1, wherein the substrate is dielectric. Original
The method of claim 1, wherein the cobalt layer is deposited on the substrate using one or more of dicobalt carbonyl [C o 2(CO) s], cobalt acetylacetonate [Co(CH 3 COC HCOCH 3) 2], b is cyclopentadienyl cobalt [(C₅H 5) 2 Co], cobalt tricarbonyl nitrosyl [Co(CO) 3 N O], cyclopentadienyl cobalt dicarbonyl [C 5 H 5 CO(CO) 2], and tetracobalt dodecacarbonyl [C o 4(CO) 1 2]. Previously presented
The method of claim 1, wherein the annealing process includes rapid thermal annealing. Previously presented
The method of claim 1, wherein the carbon precursor gas includes one or more of methane (CH 4) or acetylene (C 2 H 2), and ethylene (C 2 H 4). Original
The method of claim 1, wherein the removing of carbon atoms from top of the cobalt layer includes etching at room temperature. Original
The method of claim 1, wherein the removing of the cobalt layer includes etching. Original
The method of claim 1, wherein the layer of cobalt deposited on the substrate is substituted with a layer of Ni. Original
The method of claim [[4]] 1, wherein the deposition process of the cobalt layer on the substrate includes physical vapor deposition. Currently amended
The method of claim 5, wherein the process is sputtering. Original
The method of claim [[5]] 1, wherein the deposition process of the cobalt layer on the substrate includes e-beam evaporation. Currently amended
The method of claim 8, wherein thickness of the cobalt layer ranges from about 5 nm to about 20 nm and the grain boundaries are substantially zero. Original
Canceled
Materials described outside the worked examples.
graphene
C
cobalt
Co
carbon precursor gas
dielectric substrate
silicon
Si
silicon dioxide
SiO₂
quartz
magnesium fluoride
MgF₂
calcium fluoride
CaF₂
aluminum fluoride
AlF₃
tantalum pentoxide
Ta₂O₅
hafnium oxide
HfO₂
zirconium oxide
ZrO₂
yttrium oxide
Y₂O₃
scandium oxide
Sc₂O₃
boron nitride
BN
molybdenum disulfide
MoS₂
tungsten diselenide
WSe₂
tungsten disulfide
WS₂
mica
glass
dicobalt carbonyl
Co₂(CO)8
cobalt acetylacetonate
Co(CH₃COCHCOCH₃)2
bis(cyclopentadienyl) cobalt
(C₅H₅)2Co
cobalt tricarbonyl nitrosyl
Co(CO)3NO
cyclopentadienyl cobalt dicarbonyl
C₅H₅Co(CO)2
tetracobalt dodecacarbonyl
Co₄(CO)12
methane
CH₄
acetylene
C₂H₂
ethylene
C₂H₄
iron(III) chloride
FeCl₃
iron(III) sulfate
Fe₂(SO₄)3
iron(III) sulfamate
Fe(SO₃NH₂)3
iron mesylate
Fe(SO₃CH₃)3
copper(II) chloride
CuCl₂
potassium permanganate
KMnO₄
copper sulfate
CuSO₄
nickel
Ni
hydrogen
H₂
argon
Ar
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 7 is a graph of intensity vs. Raman shift to show evidence of graphene growth on SiO 2 at a first exemplary temperature (abo u t 460 ° C). [0017]
FIG. 7 is a graph of intensity vs. Raman shift to show evidence of graphene growth on SiO 2 at a first exemplary temperature (abo u t 460 ° C). [0017]
FIG. 8 is a graph of intensity vs. Raman shift to show evidence of graphene growth on SiO 2 at a second exemplary temperature (about 400 ° C). [0018]
FIG. 8 is a graph of intensity vs. Raman shift to show evidence of graphene growth on SiO 2 at a second exemplary temperature (about 400 ° C). [0018]
FIG. 9 is a graph of intensity vs. Raman shift to show evidence of graphene growth on low- k dielectric at an exemplary temperature of about 460 0 C. [0019]
FIG. 9 is a graph of intensity vs. Raman shift to show evidence of graphene growth on low- k dielectric at an exemplary temperature of about 460 0 C. [0019]
FIG. 10 is a graph of graphene growth rate (thickness in nm vs. time in minutes) for graphene growth on 8 nm cobalt deposited by E-beam evaporation vs. 12 nm …
FIG. 10 is a graph of graphene growth rate (thickness in nm vs. time in minutes) for graphene growth on 8 nm cobalt deposited by E-beam evaporation vs. 12 nm …
FIG. 11 is a graph of intensity vs. Raman shift to show evidence of graphene growth using A l 2 3/Co as a sacrificial layer at a first exemplary temperature …
FIG. 11 is a graph of intensity vs. Raman shift to show evidence of graphene growth using A l 2 3/Co as a sacrificial layer at a first exemplary temperature …
FIG. 12 is a graph of intensity vs. Raman shift to show evidence of graphene growth using A 1203/Co as a sacrificial layer at a second exemplary temperature …
FIG. 12 is a graph of intensity vs. Raman shift to show evidence of graphene growth using A 1203/Co as a sacrificial layer at a second exemplary temperature …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
cobalt layer thickness (e-beam evaporation) | 5–20 nm | Co |
cobalt layer thickness (e-beam evaporation, narrower range) | 6–18 nm | Co |
cobalt layer thickness (sputtering) | 5–500 nm | Co |
cobalt grain size (sputtering) | 1–100 nm | Co |
Temperature | 350–800 °C | — |
Pressure | 5–100 mtorr | — |
Pressure | 5–600 mtorr | — |
Duration | 5–15 minutes | — |
Thickness | 1–5 nm | — |
Duration | 1–5 hours | — |
Thickness | ≤ 30 nm | — |
Temperature | 315–385 °C | — |
Related documents with shared materials, methods, properties, or citations.
SINGLE CRYSTALLINE GRAPHENE SHEET AND PROCESS OF PREPARING THE SAME
GRAPHENE WIRING STRUCTURE AND MANUFACTURING METHOD THEREOF
Method for Growing High-Quality Graphene Layer
GRAPHENE PRODUCTION PROCESS
ELECTRONIC DEVICE HAVING GRAPHENE-SEMICONDUCTOR MULTI-JUNCTION AND METHOD OF MANUFACTURING THE ELECTRONIC DEVICE
METHOD OF SYNTHESIZING THICKNESS-CONTROLLED GRAPHENE THROUGH CHEMICAL VAPOR DEPOSITION USING CU-NI THIN FILM LAMINATE
ELECTROWETTING ON DIELECTRIC USING GRAPHENE
METHOD OF FABRICATING HEXAGONAL BORON NITRIDE
GRAPHENE BASED FIELD EFFECT TRANSISTOR
METHOD OF MANUFACTURING GRAPHENE SUBSTRATE, AND GRAPHENE SUBSTRATE