Patent

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Patent

Graphene based Field Effect Transistor

Drawings

Patent drawings and their descriptions. Click a drawing to enlarge it.

FIG. 1

FIG. 1 schematically represents a graphene oxide layer (3) and more precisely an epoxidized graphene layer (3) 30 according to two diﬀerent perspective views. …

FIG. 2

performance graph

FIG. 2 (bottom) is a graph of the resistance (R) versus the number of O 2 pulses (0 2#) for both a device according to the prior art (B) and a device according …

FIG. 3

performance graph

FIG. 3 is a graph of the normalized intensity versus the Raman shift (Raman 2D mode) for A (a device according to the present disclosure) and B (a device …

FIG. 4

FIG. 4 is a schematic representation of a device according to an embodiment of the present disclosure. 30

FIG. 5

performance graph

FIG. 5 is a graph of the resistance versus the top-gate voltage for a device according to an embodiment of the present disclosure.

FIG. 6

FIG. 6 is a schematic representation of a method for manufacturing a semiconductor device according to an embodiment of the present disclosure.

FIG. 7

performance graph

FIG. 7 is a graph of the band gap of graphene oxide [eV] as a function of the oxygen coverage (C02, %). 5 Description of illustrative embodiments The present …

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

6 independent · 18 dependent

1
IndependentCgraphene oxidehigh-k dielectricgraphene-based field effect transistor
A semiconductor ﬁeld eﬀect transistor device comprising: a semiconductor substrate; a source; a drain; a graphene layer channel, wherein the source and the drain deﬁne the graphene layer channel therebetween; a graphene oxide layer overlaying the graphene layer channel, wherein the graphene oxide layer has an oxygen coverage of from 4-- 25 to 50 %, wherein the oxygen coverage is a number of oxygen atoms of the graphene oxide layer divided by a number of carbon atoms of the graphene oxide layer, multiplied by 100 %, wherein the graphene oxide layer has a resistivity higher than 10 10 Q/square, wherein the graphene oxide layer has an optical band gap of from 1 to 3 eV, and wherein the graphene oxide is an insulator; and a high-k dielectric layer overlaying the graphene oxide layer; and a top electrode situated atop the high-k dielectric layer.
1. 2
  Dependent← claim 1high-k dielectricgraphene-based field effect transistor
  The semiconductor device of Claim 1, wherein the high-k dielectric layer is obtainable by a method comprising at least one atomic layer deposition step.
2. 3
  Dependent← claim 1high-k dielectricgraphene-based field effect transistor
  The device of Claim 1, wherein the high-k dielectric layer has a thickness of from 2 nm to 45 nm.
3. 4
  Dependent← claim 1high-k dielectricgraphene-based field effect transistor
  The device of Claim 1, wherein the high-k dielectric layer has a thickness of from 2 nm to 5 nm.
4. 10
  Dependent← claim 1graphene oxidegraphene-based field effect transistor
  The device of Claim 1, wherein the graphene oxide layer comprises oxygen atoms and carbon atoms and wherein a majority of the oxygen atoms are linked to two carbons of the graphene oxide layer, thereby forming an epoxy bond.
5. 11
  Dependent← claim 1Cgraphene oxidehigh-k dielectricgraphene-based field effect transistor
  A method for manufacturing a semiconductor device, comprising: a) providing a graphene oxide layer on top of a graphene layer; and b) exposing the graphene oxide layer to alternating metal precursor for high-k metal oxide atomic layer deposition pulses and oxygen precursor atomic layer deposition pulses so as to form a high-k metal oxide layer, whereby a semiconductor device of Claim 1 is obtained. withdrawn
6. 21
  Dependent← claim 1graphene-based field effect transistor
  The device of Claim 1, wherein the ﬁeld eﬀect transistor is a dual-gate ﬁeld eﬀect transistor.
7. 22
  Dependent← claim 1graphene-based field effect transistor
  The device of Claim 1, wherein the high
8. 23
  Dependent← claim 1graphene oxidegraphene-based field effect transistor
  The device of Claim 1, wherein the graphene to 2.5 eV.
9. 24
  Dependent← claim 1Al₂O₃graphene oxideCgraphene-based field effect transistor
  The device of Claim 1, wherein the graphene k-dielectric layer is an A 1 2 0 3 layer. oxide layer has an optical band gap of from 1.5 layer gate is a graphene monolayer. -4-
5
Independent
canceled
6
Independent
canceled
7
Independent
canceled
8
Independent
canceled
9
Independent
canceled

Device structures

Layer stacks claimed or described, ordered top of device to substrate.

graphene-based field effect transistor

top_gate_electrodetop gate electrode

high-k dielectricgate dielectric

graphene oxidegate seed insulator

Cchannel

substratesubstrate

Materials

Materials described outside the worked examples.

graphene

Channel Material

graphene oxide

Gate Dielectric Seed Layer Insulator

Process steps

Additional fabrication and treatment steps described in the patent.

Ald Growth

Step 1

Process details

notes:alternating metal precursor ALD pulses and oxygen precursor ALD pulses

method:alternating ALD pulses

precursors:metal precursor for high-k metal oxide, oxygen precursor

Materials:

Characterization

Measurements and analyses referenced in the patent, with their drawing references.

bandgap

Bandgap

FIG. 1 schematically represents a graphene oxide layer (3) and more precisely an epoxidized graphene layer (3) 30 according to two diﬀerent perspective views. …

Figure references

FIG. 1

grapheneGraphene

Reported properties

Performance values and ranges asserted in the specification or claims.

Property	Value	Material
graphene oxide layer resistivity (claimed range)	≥ 10000000000	graphene oxide
graphene oxide layer optical band gap (claimed range)	1–3

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Graphene based Field Effect Transistor | Matter42 Literature