Patent
US 8,456,902Diamond-shaped graphene nano-patch switching device
Nicholas G. Kioussis
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 8,456,902Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1, comprising FIGs. 1 A, 1 B, and 1 C, provides graphical representations of density of states (DOS) for A) the three magnetic states antiparallel, …
FIG. 2 is a graphical representation of molecular origins of magnetism in a diamond-5 graphene nanoflake; the left panel shows the DOS for the AP, NP, and P …
FIG. 3, comprising FIGs. 3A, 3 B, and 3C, shows spin polarized electron transport through graphene diamond-shape nano-junctions of different size and …
FIG. 4, comprising FIGs. 4A and 4 B, is a representation of the variation of the atomic spin-magnetization in a diamond-5 embodiment as a function of the …
FIG. 5 is a graph of schematic variation of the total energy of the diamond-shaped graphene nanoflake versus external electric field for the antiparallel, …
FIG. 6, comprising FIGs. 6A, 6 B, 6 C and 6D show magnetization in triangular and diamond-shaped nano-patches where A) shows three possible magnetic states for …
FIG. 7A and 7 B, is a graphical representation of the variation of spin- up and spin-down energy levels with electric field for the AP, P and NP magnetic states …
FIG. 8 shows the electric field dependence of the various energy levels for the AP-state of the diamond-5; the left panel shows a zoom-in region of the low-field …
FIG. 9 shows the smooth transition from the AP to the NP state for the diamond-5 embodiment, where the right panel displays the variation of the energy bands …
FIG. 10 shows the molecular orbital hybridization for the P-state diamond-5 in the low- field region (< 0.08 eV/A) and the evolution of the energy bands in this …
FIG. 11 shows the abrupt transition from the P to the NP state for the diamond-5 embodiment and the behavior of the energy bands around that transition point. …
FIG. 12, comprising FIGs. 12A, 12 B, 12C, 12D, 12E and 12F, is a representation of the control of magnetism in generalized diamond-shaped graphene structures …
FIG. 13, comprising FIGs. 13A and 13 B, shows excess (+, upward- pointing triangle) and loss (-, downward-pointing triangle) of net Mulliken charge per atom …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(original) The nano-electronic switching device recited in claim 1 wherein said triangular shapes are geometrically identical.
The nano-electronic switching device recited i n claim 1 further comprising a pair of device-interconnecting leads formed from graphene nano-ribbons integrally connected to said graphene patch.
The nano-electronic switching device-recited in claim 1 wherein the conductance through said graphene patch is dependent upon the magnetization of said graphene triangular shapes.
The nano-electronic switching device recited in claim 4 wherein said magnetization is controlled by a potential difference applied to the pair of opposed triangular shapes.
AMENDMENT Continued Serial No. 12/799,619 6. The nano-electronic switching device recited in claim 4 wherein the magnetization of said graphene triangular shapes is controlled by the application of two independent potential differences of different polarities respectively to said graphene triangular shapes.
The nano-elect r onic switching device recited in claim 1 wherein said graphene diamond-shaped patch has at least two stable magnetic states dependent upon the relative magnetization of the respective triangular shapes.
The nano-electronic switching device recited in claim 7 wherein an antiparallel magnetic state produces the least conductance.
(original) An electronic switch for selectively b l ocking and passing current, the switch comprising a diamond-shaped graphene nanoflake formed by a pair of opposed graphene triangles having a shared base and unreconstructed edges.
(original) The switch recited in claim 9 wherein said triangles are geometrically identical.
11. The switch recited in claim 9 further comprising a pair of device- interconnecting leads formed from graphene nano-ribbons integrally connected to said graphene nanoflake.
The switch recited in claim 9 wherein the conductance through said graphene nanoflake is dependent upon the magnetization of said graphene triangles.
(original) The switch recited in claim 9 wherein said diamond-shaped graphene nanoflake has at least two stable magnetic states dependent upon the relative magnetization of the respect i ve graphene triangles.
1 7. A source of electric-field embedded in a nano-scale circuit; the source comprising: a nanopatch graphene-based system having a plurality of interior carbon atoms arranged in a two-dimensional honeycomb lattice; and a plurality of passivated carbon atoms along an exterior perimeter of said lattice and forming a plurality of electrically polarized bonds; said bonds exhibiting electric-dipole-moment vectors aligned along an axis of each said bond, thus forming a net electric dipole moment based upon the number of and orientation of said passivated carbon atoms.
AMENDMENT Continued Serial No. 12 1 799,619 18.(withdrawn) A graphene magnetic-based non-volatile memory device comprising: a plurality of triangular-shaped graphene nanopatches forming respective geometric diam o nds and controlled in combination to form a memory device; the memory state of each said memory device being controlled by independent potentials applied to respective triangular nano-patches of each said diamond to provide a selected magnetic ordering of each said diamond and thus its memory state. withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
nano-electronic switching device with diamond-shaped graphene patch
electronic switch based on diamond-shaped graphene nanoflake
nanopatch graphene-based electric-field source
graphene magnetic-based non-volatile memory device
Materials described outside the worked examples.
graphene
C
reconstructed graphene nano-ribbons
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1, comprising FIGs. 1 A, 1 B, and 1 C, provides graphical representations of density of states (DOS) for A) the three magnetic states antiparallel, …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
bandgap_AP_diamond5 | 0.769 eV | C |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,456,902Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1, comprising FIGs. 1 A, 1 B, and 1 C, provides graphical representations of density of states (DOS) for A) the three magnetic states antiparallel, …
FIG. 2 is a graphical representation of molecular origins of magnetism in a diamond-5 graphene nanoflake; the left panel shows the DOS for the AP, NP, and P …
FIG. 3, comprising FIGs. 3A, 3 B, and 3C, shows spin polarized electron transport through graphene diamond-shape nano-junctions of different size and …
FIG. 4, comprising FIGs. 4A and 4 B, is a representation of the variation of the atomic spin-magnetization in a diamond-5 embodiment as a function of the …
FIG. 5 is a graph of schematic variation of the total energy of the diamond-shaped graphene nanoflake versus external electric field for the antiparallel, …
FIG. 6, comprising FIGs. 6A, 6 B, 6 C and 6D show magnetization in triangular and diamond-shaped nano-patches where A) shows three possible magnetic states for …
FIG. 7A and 7 B, is a graphical representation of the variation of spin- up and spin-down energy levels with electric field for the AP, P and NP magnetic states …
FIG. 8 shows the electric field dependence of the various energy levels for the AP-state of the diamond-5; the left panel shows a zoom-in region of the low-field …
FIG. 9 shows the smooth transition from the AP to the NP state for the diamond-5 embodiment, where the right panel displays the variation of the energy bands …
FIG. 10 shows the molecular orbital hybridization for the P-state diamond-5 in the low- field region (< 0.08 eV/A) and the evolution of the energy bands in this …
FIG. 11 shows the abrupt transition from the P to the NP state for the diamond-5 embodiment and the behavior of the energy bands around that transition point. …
FIG. 12, comprising FIGs. 12A, 12 B, 12C, 12D, 12E and 12F, is a representation of the control of magnetism in generalized diamond-shaped graphene structures …
FIG. 13, comprising FIGs. 13A and 13 B, shows excess (+, upward- pointing triangle) and loss (-, downward-pointing triangle) of net Mulliken charge per atom …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(original) The nano-electronic switching device recited in claim 1 wherein said triangular shapes are geometrically identical.
The nano-electronic switching device recited i n claim 1 further comprising a pair of device-interconnecting leads formed from graphene nano-ribbons integrally connected to said graphene patch.
The nano-electronic switching device-recited in claim 1 wherein the conductance through said graphene patch is dependent upon the magnetization of said graphene triangular shapes.
The nano-electronic switching device recited in claim 4 wherein said magnetization is controlled by a potential difference applied to the pair of opposed triangular shapes.
AMENDMENT Continued Serial No. 12/799,619 6. The nano-electronic switching device recited in claim 4 wherein the magnetization of said graphene triangular shapes is controlled by the application of two independent potential differences of different polarities respectively to said graphene triangular shapes.
The nano-elect r onic switching device recited in claim 1 wherein said graphene diamond-shaped patch has at least two stable magnetic states dependent upon the relative magnetization of the respective triangular shapes.
The nano-electronic switching device recited in claim 7 wherein an antiparallel magnetic state produces the least conductance.
(original) An electronic switch for selectively b l ocking and passing current, the switch comprising a diamond-shaped graphene nanoflake formed by a pair of opposed graphene triangles having a shared base and unreconstructed edges.
(original) The switch recited in claim 9 wherein said triangles are geometrically identical.
11. The switch recited in claim 9 further comprising a pair of device- interconnecting leads formed from graphene nano-ribbons integrally connected to said graphene nanoflake.
The switch recited in claim 9 wherein the conductance through said graphene nanoflake is dependent upon the magnetization of said graphene triangles.
(original) The switch recited in claim 9 wherein said diamond-shaped graphene nanoflake has at least two stable magnetic states dependent upon the relative magnetization of the respect i ve graphene triangles.
1 7. A source of electric-field embedded in a nano-scale circuit; the source comprising: a nanopatch graphene-based system having a plurality of interior carbon atoms arranged in a two-dimensional honeycomb lattice; and a plurality of passivated carbon atoms along an exterior perimeter of said lattice and forming a plurality of electrically polarized bonds; said bonds exhibiting electric-dipole-moment vectors aligned along an axis of each said bond, thus forming a net electric dipole moment based upon the number of and orientation of said passivated carbon atoms.
AMENDMENT Continued Serial No. 12 1 799,619 18.(withdrawn) A graphene magnetic-based non-volatile memory device comprising: a plurality of triangular-shaped graphene nanopatches forming respective geometric diam o nds and controlled in combination to form a memory device; the memory state of each said memory device being controlled by independent potentials applied to respective triangular nano-patches of each said diamond to provide a selected magnetic ordering of each said diamond and thus its memory state. withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
nano-electronic switching device with diamond-shaped graphene patch
electronic switch based on diamond-shaped graphene nanoflake
nanopatch graphene-based electric-field source
graphene magnetic-based non-volatile memory device
Materials described outside the worked examples.
graphene
C
reconstructed graphene nano-ribbons
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1, comprising FIGs. 1 A, 1 B, and 1 C, provides graphical representations of density of states (DOS) for A) the three magnetic states antiparallel, …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
bandgap_AP_diamond5 | 0.769 eV | C |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,456,902Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1, comprising FIGs. 1 A, 1 B, and 1 C, provides graphical representations of density of states (DOS) for A) the three magnetic states antiparallel, …
FIG. 2 is a graphical representation of molecular origins of magnetism in a diamond-5 graphene nanoflake; the left panel shows the DOS for the AP, NP, and P …
FIG. 3, comprising FIGs. 3A, 3 B, and 3C, shows spin polarized electron transport through graphene diamond-shape nano-junctions of different size and …
FIG. 4, comprising FIGs. 4A and 4 B, is a representation of the variation of the atomic spin-magnetization in a diamond-5 embodiment as a function of the …
FIG. 5 is a graph of schematic variation of the total energy of the diamond-shaped graphene nanoflake versus external electric field for the antiparallel, …
FIG. 6, comprising FIGs. 6A, 6 B, 6 C and 6D show magnetization in triangular and diamond-shaped nano-patches where A) shows three possible magnetic states for …
FIG. 7A and 7 B, is a graphical representation of the variation of spin- up and spin-down energy levels with electric field for the AP, P and NP magnetic states …
FIG. 8 shows the electric field dependence of the various energy levels for the AP-state of the diamond-5; the left panel shows a zoom-in region of the low-field …
FIG. 9 shows the smooth transition from the AP to the NP state for the diamond-5 embodiment, where the right panel displays the variation of the energy bands …
FIG. 10 shows the molecular orbital hybridization for the P-state diamond-5 in the low- field region (< 0.08 eV/A) and the evolution of the energy bands in this …
FIG. 11 shows the abrupt transition from the P to the NP state for the diamond-5 embodiment and the behavior of the energy bands around that transition point. …
FIG. 12, comprising FIGs. 12A, 12 B, 12C, 12D, 12E and 12F, is a representation of the control of magnetism in generalized diamond-shaped graphene structures …
FIG. 13, comprising FIGs. 13A and 13 B, shows excess (+, upward- pointing triangle) and loss (-, downward-pointing triangle) of net Mulliken charge per atom …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(original) The nano-electronic switching device recited in claim 1 wherein said triangular shapes are geometrically identical.
The nano-electronic switching device recited i n claim 1 further comprising a pair of device-interconnecting leads formed from graphene nano-ribbons integrally connected to said graphene patch.
The nano-electronic switching device-recited in claim 1 wherein the conductance through said graphene patch is dependent upon the magnetization of said graphene triangular shapes.
The nano-electronic switching device recited in claim 4 wherein said magnetization is controlled by a potential difference applied to the pair of opposed triangular shapes.
AMENDMENT Continued Serial No. 12/799,619 6. The nano-electronic switching device recited in claim 4 wherein the magnetization of said graphene triangular shapes is controlled by the application of two independent potential differences of different polarities respectively to said graphene triangular shapes.
The nano-elect r onic switching device recited in claim 1 wherein said graphene diamond-shaped patch has at least two stable magnetic states dependent upon the relative magnetization of the respective triangular shapes.
The nano-electronic switching device recited in claim 7 wherein an antiparallel magnetic state produces the least conductance.
(original) An electronic switch for selectively b l ocking and passing current, the switch comprising a diamond-shaped graphene nanoflake formed by a pair of opposed graphene triangles having a shared base and unreconstructed edges.
(original) The switch recited in claim 9 wherein said triangles are geometrically identical.
11. The switch recited in claim 9 further comprising a pair of device- interconnecting leads formed from graphene nano-ribbons integrally connected to said graphene nanoflake.
The switch recited in claim 9 wherein the conductance through said graphene nanoflake is dependent upon the magnetization of said graphene triangles.
(original) The switch recited in claim 9 wherein said diamond-shaped graphene nanoflake has at least two stable magnetic states dependent upon the relative magnetization of the respect i ve graphene triangles.
1 7. A source of electric-field embedded in a nano-scale circuit; the source comprising: a nanopatch graphene-based system having a plurality of interior carbon atoms arranged in a two-dimensional honeycomb lattice; and a plurality of passivated carbon atoms along an exterior perimeter of said lattice and forming a plurality of electrically polarized bonds; said bonds exhibiting electric-dipole-moment vectors aligned along an axis of each said bond, thus forming a net electric dipole moment based upon the number of and orientation of said passivated carbon atoms.
AMENDMENT Continued Serial No. 12 1 799,619 18.(withdrawn) A graphene magnetic-based non-volatile memory device comprising: a plurality of triangular-shaped graphene nanopatches forming respective geometric diam o nds and controlled in combination to form a memory device; the memory state of each said memory device being controlled by independent potentials applied to respective triangular nano-patches of each said diamond to provide a selected magnetic ordering of each said diamond and thus its memory state. withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
nano-electronic switching device with diamond-shaped graphene patch
electronic switch based on diamond-shaped graphene nanoflake
nanopatch graphene-based electric-field source
graphene magnetic-based non-volatile memory device
Materials described outside the worked examples.
graphene
C
reconstructed graphene nano-ribbons
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1, comprising FIGs. 1 A, 1 B, and 1 C, provides graphical representations of density of states (DOS) for A) the three magnetic states antiparallel, …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
bandgap_AP_diamond5 | 0.769 eV | C |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,456,902Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1, comprising FIGs. 1 A, 1 B, and 1 C, provides graphical representations of density of states (DOS) for A) the three magnetic states antiparallel, …
FIG. 2 is a graphical representation of molecular origins of magnetism in a diamond-5 graphene nanoflake; the left panel shows the DOS for the AP, NP, and P …
FIG. 3, comprising FIGs. 3A, 3 B, and 3C, shows spin polarized electron transport through graphene diamond-shape nano-junctions of different size and …
FIG. 4, comprising FIGs. 4A and 4 B, is a representation of the variation of the atomic spin-magnetization in a diamond-5 embodiment as a function of the …
FIG. 5 is a graph of schematic variation of the total energy of the diamond-shaped graphene nanoflake versus external electric field for the antiparallel, …
FIG. 6, comprising FIGs. 6A, 6 B, 6 C and 6D show magnetization in triangular and diamond-shaped nano-patches where A) shows three possible magnetic states for …
FIG. 7A and 7 B, is a graphical representation of the variation of spin- up and spin-down energy levels with electric field for the AP, P and NP magnetic states …
FIG. 8 shows the electric field dependence of the various energy levels for the AP-state of the diamond-5; the left panel shows a zoom-in region of the low-field …
FIG. 9 shows the smooth transition from the AP to the NP state for the diamond-5 embodiment, where the right panel displays the variation of the energy bands …
FIG. 10 shows the molecular orbital hybridization for the P-state diamond-5 in the low- field region (< 0.08 eV/A) and the evolution of the energy bands in this …
FIG. 11 shows the abrupt transition from the P to the NP state for the diamond-5 embodiment and the behavior of the energy bands around that transition point. …
FIG. 12, comprising FIGs. 12A, 12 B, 12C, 12D, 12E and 12F, is a representation of the control of magnetism in generalized diamond-shaped graphene structures …
FIG. 13, comprising FIGs. 13A and 13 B, shows excess (+, upward- pointing triangle) and loss (-, downward-pointing triangle) of net Mulliken charge per atom …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(original) The nano-electronic switching device recited in claim 1 wherein said triangular shapes are geometrically identical.
The nano-electronic switching device recited i n claim 1 further comprising a pair of device-interconnecting leads formed from graphene nano-ribbons integrally connected to said graphene patch.
The nano-electronic switching device-recited in claim 1 wherein the conductance through said graphene patch is dependent upon the magnetization of said graphene triangular shapes.
The nano-electronic switching device recited in claim 4 wherein said magnetization is controlled by a potential difference applied to the pair of opposed triangular shapes.
AMENDMENT Continued Serial No. 12/799,619 6. The nano-electronic switching device recited in claim 4 wherein the magnetization of said graphene triangular shapes is controlled by the application of two independent potential differences of different polarities respectively to said graphene triangular shapes.
The nano-elect r onic switching device recited in claim 1 wherein said graphene diamond-shaped patch has at least two stable magnetic states dependent upon the relative magnetization of the respective triangular shapes.
The nano-electronic switching device recited in claim 7 wherein an antiparallel magnetic state produces the least conductance.
(original) An electronic switch for selectively b l ocking and passing current, the switch comprising a diamond-shaped graphene nanoflake formed by a pair of opposed graphene triangles having a shared base and unreconstructed edges.
(original) The switch recited in claim 9 wherein said triangles are geometrically identical.
11. The switch recited in claim 9 further comprising a pair of device- interconnecting leads formed from graphene nano-ribbons integrally connected to said graphene nanoflake.
The switch recited in claim 9 wherein the conductance through said graphene nanoflake is dependent upon the magnetization of said graphene triangles.
(original) The switch recited in claim 9 wherein said diamond-shaped graphene nanoflake has at least two stable magnetic states dependent upon the relative magnetization of the respect i ve graphene triangles.
1 7. A source of electric-field embedded in a nano-scale circuit; the source comprising: a nanopatch graphene-based system having a plurality of interior carbon atoms arranged in a two-dimensional honeycomb lattice; and a plurality of passivated carbon atoms along an exterior perimeter of said lattice and forming a plurality of electrically polarized bonds; said bonds exhibiting electric-dipole-moment vectors aligned along an axis of each said bond, thus forming a net electric dipole moment based upon the number of and orientation of said passivated carbon atoms.
AMENDMENT Continued Serial No. 12 1 799,619 18.(withdrawn) A graphene magnetic-based non-volatile memory device comprising: a plurality of triangular-shaped graphene nanopatches forming respective geometric diam o nds and controlled in combination to form a memory device; the memory state of each said memory device being controlled by independent potentials applied to respective triangular nano-patches of each said diamond to provide a selected magnetic ordering of each said diamond and thus its memory state. withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
nano-electronic switching device with diamond-shaped graphene patch
electronic switch based on diamond-shaped graphene nanoflake
nanopatch graphene-based electric-field source
graphene magnetic-based non-volatile memory device
Materials described outside the worked examples.
graphene
C
reconstructed graphene nano-ribbons
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1, comprising FIGs. 1 A, 1 B, and 1 C, provides graphical representations of density of states (DOS) for A) the three magnetic states antiparallel, …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
bandgap_AP_diamond5 | 0.769 eV | C |
Related documents with shared materials, methods, properties, or citations.
FIG. 2 is a graphical representation of molecular origins of magnetism in a diamond-5 graphene nanoflake; the left panel shows the DOS for the AP, NP, and P …
FIG. 5 is a graph of schematic variation of the total energy of the diamond-shaped graphene nanoflake versus external electric field for the antiparallel, …
FIG. 6, comprising FIGs. 6A, 6 B, 6 C and 6D show magnetization in triangular and diamond-shaped nano-patches where A) shows three possible magnetic states for …
FIG. 12, comprising FIGs. 12A, 12 B, 12C, 12D, 12E and 12F, is a representation of the control of magnetism in generalized diamond-shaped graphene structures …
FIG. 12, comprising FIGs. 12A, 12 B, 12C, 12D, 12E and 12F, is a representation of the control of magnetism in generalized diamond-shaped graphene structures …
| 0.392 eV |
C |
bandgap_NP_diamond5 | 0.229 eV | C |
bandgap_AP_diamond6 | 0.762 eV | C |
bandgap_P_diamond6 | 0.257 eV | C |
bandgap_NP_diamond6 | 0.099 eV | C |
bandgap_AP_diamond7 | 0.703 eV | C |
bandgap_P_diamond7 | 0.285 eV | C |
bandgap_NP_diamond7 | 0.041 eV | C |
bandgap_AP_diamond8 | 0.657 eV | C |
bandgap_P_diamond8 | 0.266 eV | C |
bandgap_NP_diamond8 | 0.014 eV | C |
Voltage | ≤ 0.1 V | — |
Voltage | ≥ 3 V | — |
Voltage | ≥ 0.1 V | — |
FIG. 2 is a graphical representation of molecular origins of magnetism in a diamond-5 graphene nanoflake; the left panel shows the DOS for the AP, NP, and P …
FIG. 5 is a graph of schematic variation of the total energy of the diamond-shaped graphene nanoflake versus external electric field for the antiparallel, …
FIG. 6, comprising FIGs. 6A, 6 B, 6 C and 6D show magnetization in triangular and diamond-shaped nano-patches where A) shows three possible magnetic states for …
FIG. 12, comprising FIGs. 12A, 12 B, 12C, 12D, 12E and 12F, is a representation of the control of magnetism in generalized diamond-shaped graphene structures …
FIG. 12, comprising FIGs. 12A, 12 B, 12C, 12D, 12E and 12F, is a representation of the control of magnetism in generalized diamond-shaped graphene structures …
| 0.392 eV |
C |
bandgap_NP_diamond5 | 0.229 eV | C |
bandgap_AP_diamond6 | 0.762 eV | C |
bandgap_P_diamond6 | 0.257 eV | C |
bandgap_NP_diamond6 | 0.099 eV | C |
bandgap_AP_diamond7 | 0.703 eV | C |
bandgap_P_diamond7 | 0.285 eV | C |
bandgap_NP_diamond7 | 0.041 eV | C |
bandgap_AP_diamond8 | 0.657 eV | C |
bandgap_P_diamond8 | 0.266 eV | C |
bandgap_NP_diamond8 | 0.014 eV | C |
Voltage | ≤ 0.1 V | — |
Voltage | ≥ 3 V | — |
Voltage | ≥ 0.1 V | — |
FIG. 2 is a graphical representation of molecular origins of magnetism in a diamond-5 graphene nanoflake; the left panel shows the DOS for the AP, NP, and P …
FIG. 5 is a graph of schematic variation of the total energy of the diamond-shaped graphene nanoflake versus external electric field for the antiparallel, …
FIG. 6, comprising FIGs. 6A, 6 B, 6 C and 6D show magnetization in triangular and diamond-shaped nano-patches where A) shows three possible magnetic states for …
FIG. 12, comprising FIGs. 12A, 12 B, 12C, 12D, 12E and 12F, is a representation of the control of magnetism in generalized diamond-shaped graphene structures …
FIG. 12, comprising FIGs. 12A, 12 B, 12C, 12D, 12E and 12F, is a representation of the control of magnetism in generalized diamond-shaped graphene structures …
| 0.392 eV |
C |
bandgap_NP_diamond5 | 0.229 eV | C |
bandgap_AP_diamond6 | 0.762 eV | C |
bandgap_P_diamond6 | 0.257 eV | C |
bandgap_NP_diamond6 | 0.099 eV | C |
bandgap_AP_diamond7 | 0.703 eV | C |
bandgap_P_diamond7 | 0.285 eV | C |
bandgap_NP_diamond7 | 0.041 eV | C |
bandgap_AP_diamond8 | 0.657 eV | C |
bandgap_P_diamond8 | 0.266 eV | C |
bandgap_NP_diamond8 | 0.014 eV | C |
Voltage | ≤ 0.1 V | — |
Voltage | ≥ 3 V | — |
Voltage | ≥ 0.1 V | — |
FIG. 2 is a graphical representation of molecular origins of magnetism in a diamond-5 graphene nanoflake; the left panel shows the DOS for the AP, NP, and P …
FIG. 5 is a graph of schematic variation of the total energy of the diamond-shaped graphene nanoflake versus external electric field for the antiparallel, …
FIG. 6, comprising FIGs. 6A, 6 B, 6 C and 6D show magnetization in triangular and diamond-shaped nano-patches where A) shows three possible magnetic states for …
FIG. 12, comprising FIGs. 12A, 12 B, 12C, 12D, 12E and 12F, is a representation of the control of magnetism in generalized diamond-shaped graphene structures …
FIG. 12, comprising FIGs. 12A, 12 B, 12C, 12D, 12E and 12F, is a representation of the control of magnetism in generalized diamond-shaped graphene structures …
| 0.392 eV |
C |
bandgap_NP_diamond5 | 0.229 eV | C |
bandgap_AP_diamond6 | 0.762 eV | C |
bandgap_P_diamond6 | 0.257 eV | C |
bandgap_NP_diamond6 | 0.099 eV | C |
bandgap_AP_diamond7 | 0.703 eV | C |
bandgap_P_diamond7 | 0.285 eV | C |
bandgap_NP_diamond7 | 0.041 eV | C |
bandgap_AP_diamond8 | 0.657 eV | C |
bandgap_P_diamond8 | 0.266 eV | C |
bandgap_NP_diamond8 | 0.014 eV | C |
Voltage | ≤ 0.1 V | — |
Voltage | ≥ 3 V | — |
Voltage | ≥ 0.1 V | — |