Patent
US 9,679,851GRAPHENE WIRING STRUCTURE AND MANUFACTURING METHOD THEREOF
Tadashi SAKAI
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,679,851Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic perspective view of a graphene wiring structure of an embodiment; [0005]
FIG. 2 is a schematic cross-section of the graphene 5 wiring structure of the embodiment; [0006]
FIG. 3 is a graph showing Raman shift of the graphene wiring structure of the embodiment; [0007]
FIG. 4 is a graph showing Raman shift of the graphene wiring structure of the embodiment; 10 [0008]
FIG. 5 is a graph showing Raman shift of the graphene wiring structure of the embodiment; and
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1. A graphene wiring structure comprising: multilayer graphene; a f irst interlayer compound existing in an interlayer space of the multilayer graphene; and a second interlayer compound existing in the interlayer space o f the multilayer graphene, wherein the second interlayer compo und containi ng comprises at least one of an oxide, a nitride and a carbide, d, the second interlayer compound exists on a side surface of the multilayer graphene.
(O riginal) The structure according to claim 1, wherein the multilayer graphene is a lamination of flat graphene sheets, and the second interlayer compound exists in the interlayer space of the multilayer graphe ne such that the sec on d interlayer c ompo und blocks at least a part of a grain b o unda ry and a f law of the f lat graphene sheet.
(Currently A m end e d) T he structure according to claim 1, wherein the first interlayer compound is one or more types selected from among metal chloride, metal fluoride, and interhalogen compound, the second interlayer compound is one or more types selected from arong metal oxide, metal nitride, and metal carbide, the metal chloride is a chloride of o ne o r m o re types of metals selected fr o m am ong FeC SVG 15055894.01-25-2017.IYDBP₉₄RRXEAPX2.CLM.2.22.406.2333.441.2374.svg 0.137 0.117 Chemistry Black and white CuC l 2, AICl 3 and MoCI, the metal fluoride is a fluoride of o ne or m o re types of metals selected fr o m am ong BF 3 and AsFs, the int e rhal o gen co mpound is a compound of o ne o r m o re types selected fr o m am ong IBr and ICl, 3 Application No. 15/055,894 Reply to Office Action of No vember 21, 2 016 the m etal oxide is an oxide of one or m o re types of metals selected f rom among Fe 2 O 3, CuO, A₁ 2 0 3 and MoO 2, th e metal nitride is a nitride of one or m o re types of metals selected f rom among Fe 3 N, Cu 3 N 2, AIN and MoN,, and th e metal carbide is a carbide of one or mo re types of metals selected from a mong Fe 3 C, Cu₂C, A₁ 4 C 3 and Mo 2 C.
(Or igin al) The structure according to claim 1, wherein the multilayer graphene is p o lycrystalli ne graphene.
8. T h e structure acc o rding to claim 1, wherein a wiring width of the multilayer graphene i s 2 0 nrm o r less.
The structure acc o rding to claim 1, wherein the first interlayer compound and the s econ d interlayer compound contain a common metal. 1 0. (Currently A m end e d) T he structure according to claim l [[3]], wherein the second interlayer compound exists o n entirety of the side surface of t he multilayer graphene.
1 1. The structure acc o rding to claim 1 [[3]], wherein t h e second interlayer compound exists o n entirety of side surfaces of the multilayer g r aphene.
(Cur rently Amended) T he structure according to claim 1 [[3]], wherein the second interlayer co mpo und is i n physical contact with an edge of the multilayer graphene.
Claims 3-4. canceled
canceled
5. The structure according to claim I, wherein the first interlayer compound is one or more types selected from among metal chloride, metal fluoride, alkali metal, alkaline-earth metal, halogen, and interhalogen compaund the second interlayer compound is one or more types selected from among metal oxide, metal nitride, and metal carbide, the metal chloride is a chloride of one o r m o re types of metals selected from a mong F e, Cu, Al and Mo, 2 Application No. 15/055,894 Reply to Office Action of the metal fluoride is a fluoride of one or m o re types of metals selected from among B and As, the alkali metal is o ne or m o re types selected from among Li, Na and K, the alkaline-earth metal is o ne or m ore ty p es selected fr om am o ng Mg and Ca, the halogen is o ne or m o re types selected fr o m a m ong F 2, C₁ 2, Br 2 and I2, the interhalog e n c ompo und is a compound of I and o ne or mo re types selected from amo ng F, Cl and Br, the metal oxide is an oxide of o ne or mo re types of metals selected fr om amo ng Fe, Cu, Al and M o, the metal nitride is a nitride of o ne o r more types of metals selected fr om amo ng F e, Cu, A l and M o, and the metal carbide is a carbide of one o r m o re types of metals s e lecte d fro m am o ng Fe, Cu, A l and M o.
Claims 13 -2 0. canceled
canceled
canceled
canceled
canceled
canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene wiring structure
Materials described outside the worked examples.
multilayer graphene
first interlayer compound
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3 is a graph showing Raman shift of the graphene wiring structure of the embodiment; [0007]
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,679,851Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic perspective view of a graphene wiring structure of an embodiment; [0005]
FIG. 2 is a schematic cross-section of the graphene 5 wiring structure of the embodiment; [0006]
FIG. 3 is a graph showing Raman shift of the graphene wiring structure of the embodiment; [0007]
FIG. 4 is a graph showing Raman shift of the graphene wiring structure of the embodiment; 10 [0008]
FIG. 5 is a graph showing Raman shift of the graphene wiring structure of the embodiment; and
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1. A graphene wiring structure comprising: multilayer graphene; a f irst interlayer compound existing in an interlayer space of the multilayer graphene; and a second interlayer compound existing in the interlayer space o f the multilayer graphene, wherein the second interlayer compo und containi ng comprises at least one of an oxide, a nitride and a carbide, d, the second interlayer compound exists on a side surface of the multilayer graphene.
(O riginal) The structure according to claim 1, wherein the multilayer graphene is a lamination of flat graphene sheets, and the second interlayer compound exists in the interlayer space of the multilayer graphe ne such that the sec on d interlayer c ompo und blocks at least a part of a grain b o unda ry and a f law of the f lat graphene sheet.
(Currently A m end e d) T he structure according to claim 1, wherein the first interlayer compound is one or more types selected from among metal chloride, metal fluoride, and interhalogen compound, the second interlayer compound is one or more types selected from arong metal oxide, metal nitride, and metal carbide, the metal chloride is a chloride of o ne o r m o re types of metals selected fr o m am ong FeC SVG 15055894.01-25-2017.IYDBP₉₄RRXEAPX2.CLM.2.22.406.2333.441.2374.svg 0.137 0.117 Chemistry Black and white CuC l 2, AICl 3 and MoCI, the metal fluoride is a fluoride of o ne or m o re types of metals selected fr o m am ong BF 3 and AsFs, the int e rhal o gen co mpound is a compound of o ne o r m o re types selected fr o m am ong IBr and ICl, 3 Application No. 15/055,894 Reply to Office Action of No vember 21, 2 016 the m etal oxide is an oxide of one or m o re types of metals selected f rom among Fe 2 O 3, CuO, A₁ 2 0 3 and MoO 2, th e metal nitride is a nitride of one or m o re types of metals selected f rom among Fe 3 N, Cu 3 N 2, AIN and MoN,, and th e metal carbide is a carbide of one or mo re types of metals selected from a mong Fe 3 C, Cu₂C, A₁ 4 C 3 and Mo 2 C.
(Or igin al) The structure according to claim 1, wherein the multilayer graphene is p o lycrystalli ne graphene.
8. T h e structure acc o rding to claim 1, wherein a wiring width of the multilayer graphene i s 2 0 nrm o r less.
The structure acc o rding to claim 1, wherein the first interlayer compound and the s econ d interlayer compound contain a common metal. 1 0. (Currently A m end e d) T he structure according to claim l [[3]], wherein the second interlayer compound exists o n entirety of the side surface of t he multilayer graphene.
1 1. The structure acc o rding to claim 1 [[3]], wherein t h e second interlayer compound exists o n entirety of side surfaces of the multilayer g r aphene.
(Cur rently Amended) T he structure according to claim 1 [[3]], wherein the second interlayer co mpo und is i n physical contact with an edge of the multilayer graphene.
Claims 3-4. canceled
canceled
5. The structure according to claim I, wherein the first interlayer compound is one or more types selected from among metal chloride, metal fluoride, alkali metal, alkaline-earth metal, halogen, and interhalogen compaund the second interlayer compound is one or more types selected from among metal oxide, metal nitride, and metal carbide, the metal chloride is a chloride of one o r m o re types of metals selected from a mong F e, Cu, Al and Mo, 2 Application No. 15/055,894 Reply to Office Action of the metal fluoride is a fluoride of one or m o re types of metals selected from among B and As, the alkali metal is o ne or m o re types selected from among Li, Na and K, the alkaline-earth metal is o ne or m ore ty p es selected fr om am o ng Mg and Ca, the halogen is o ne or m o re types selected fr o m a m ong F 2, C₁ 2, Br 2 and I2, the interhalog e n c ompo und is a compound of I and o ne or mo re types selected from amo ng F, Cl and Br, the metal oxide is an oxide of o ne or mo re types of metals selected fr om amo ng Fe, Cu, Al and M o, the metal nitride is a nitride of o ne o r more types of metals selected fr om amo ng F e, Cu, A l and M o, and the metal carbide is a carbide of one o r m o re types of metals s e lecte d fro m am o ng Fe, Cu, A l and M o.
Claims 13 -2 0. canceled
canceled
canceled
canceled
canceled
canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene wiring structure
Materials described outside the worked examples.
multilayer graphene
first interlayer compound
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3 is a graph showing Raman shift of the graphene wiring structure of the embodiment; [0007]
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,679,851Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic perspective view of a graphene wiring structure of an embodiment; [0005]
FIG. 2 is a schematic cross-section of the graphene 5 wiring structure of the embodiment; [0006]
FIG. 3 is a graph showing Raman shift of the graphene wiring structure of the embodiment; [0007]
FIG. 4 is a graph showing Raman shift of the graphene wiring structure of the embodiment; 10 [0008]
FIG. 5 is a graph showing Raman shift of the graphene wiring structure of the embodiment; and
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1. A graphene wiring structure comprising: multilayer graphene; a f irst interlayer compound existing in an interlayer space of the multilayer graphene; and a second interlayer compound existing in the interlayer space o f the multilayer graphene, wherein the second interlayer compo und containi ng comprises at least one of an oxide, a nitride and a carbide, d, the second interlayer compound exists on a side surface of the multilayer graphene.
(O riginal) The structure according to claim 1, wherein the multilayer graphene is a lamination of flat graphene sheets, and the second interlayer compound exists in the interlayer space of the multilayer graphe ne such that the sec on d interlayer c ompo und blocks at least a part of a grain b o unda ry and a f law of the f lat graphene sheet.
(Currently A m end e d) T he structure according to claim 1, wherein the first interlayer compound is one or more types selected from among metal chloride, metal fluoride, and interhalogen compound, the second interlayer compound is one or more types selected from arong metal oxide, metal nitride, and metal carbide, the metal chloride is a chloride of o ne o r m o re types of metals selected fr o m am ong FeC SVG 15055894.01-25-2017.IYDBP₉₄RRXEAPX2.CLM.2.22.406.2333.441.2374.svg 0.137 0.117 Chemistry Black and white CuC l 2, AICl 3 and MoCI, the metal fluoride is a fluoride of o ne or m o re types of metals selected fr o m am ong BF 3 and AsFs, the int e rhal o gen co mpound is a compound of o ne o r m o re types selected fr o m am ong IBr and ICl, 3 Application No. 15/055,894 Reply to Office Action of No vember 21, 2 016 the m etal oxide is an oxide of one or m o re types of metals selected f rom among Fe 2 O 3, CuO, A₁ 2 0 3 and MoO 2, th e metal nitride is a nitride of one or m o re types of metals selected f rom among Fe 3 N, Cu 3 N 2, AIN and MoN,, and th e metal carbide is a carbide of one or mo re types of metals selected from a mong Fe 3 C, Cu₂C, A₁ 4 C 3 and Mo 2 C.
(Or igin al) The structure according to claim 1, wherein the multilayer graphene is p o lycrystalli ne graphene.
8. T h e structure acc o rding to claim 1, wherein a wiring width of the multilayer graphene i s 2 0 nrm o r less.
The structure acc o rding to claim 1, wherein the first interlayer compound and the s econ d interlayer compound contain a common metal. 1 0. (Currently A m end e d) T he structure according to claim l [[3]], wherein the second interlayer compound exists o n entirety of the side surface of t he multilayer graphene.
1 1. The structure acc o rding to claim 1 [[3]], wherein t h e second interlayer compound exists o n entirety of side surfaces of the multilayer g r aphene.
(Cur rently Amended) T he structure according to claim 1 [[3]], wherein the second interlayer co mpo und is i n physical contact with an edge of the multilayer graphene.
Claims 3-4. canceled
canceled
5. The structure according to claim I, wherein the first interlayer compound is one or more types selected from among metal chloride, metal fluoride, alkali metal, alkaline-earth metal, halogen, and interhalogen compaund the second interlayer compound is one or more types selected from among metal oxide, metal nitride, and metal carbide, the metal chloride is a chloride of one o r m o re types of metals selected from a mong F e, Cu, Al and Mo, 2 Application No. 15/055,894 Reply to Office Action of the metal fluoride is a fluoride of one or m o re types of metals selected from among B and As, the alkali metal is o ne or m o re types selected from among Li, Na and K, the alkaline-earth metal is o ne or m ore ty p es selected fr om am o ng Mg and Ca, the halogen is o ne or m o re types selected fr o m a m ong F 2, C₁ 2, Br 2 and I2, the interhalog e n c ompo und is a compound of I and o ne or mo re types selected from amo ng F, Cl and Br, the metal oxide is an oxide of o ne or mo re types of metals selected fr om amo ng Fe, Cu, Al and M o, the metal nitride is a nitride of o ne o r more types of metals selected fr om amo ng F e, Cu, A l and M o, and the metal carbide is a carbide of one o r m o re types of metals s e lecte d fro m am o ng Fe, Cu, A l and M o.
Claims 13 -2 0. canceled
canceled
canceled
canceled
canceled
canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene wiring structure
Materials described outside the worked examples.
multilayer graphene
first interlayer compound
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3 is a graph showing Raman shift of the graphene wiring structure of the embodiment; [0007]
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,679,851Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic perspective view of a graphene wiring structure of an embodiment; [0005]
FIG. 2 is a schematic cross-section of the graphene 5 wiring structure of the embodiment; [0006]
FIG. 3 is a graph showing Raman shift of the graphene wiring structure of the embodiment; [0007]
FIG. 4 is a graph showing Raman shift of the graphene wiring structure of the embodiment; 10 [0008]
FIG. 5 is a graph showing Raman shift of the graphene wiring structure of the embodiment; and
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1. A graphene wiring structure comprising: multilayer graphene; a f irst interlayer compound existing in an interlayer space of the multilayer graphene; and a second interlayer compound existing in the interlayer space o f the multilayer graphene, wherein the second interlayer compo und containi ng comprises at least one of an oxide, a nitride and a carbide, d, the second interlayer compound exists on a side surface of the multilayer graphene.
(O riginal) The structure according to claim 1, wherein the multilayer graphene is a lamination of flat graphene sheets, and the second interlayer compound exists in the interlayer space of the multilayer graphe ne such that the sec on d interlayer c ompo und blocks at least a part of a grain b o unda ry and a f law of the f lat graphene sheet.
(Currently A m end e d) T he structure according to claim 1, wherein the first interlayer compound is one or more types selected from among metal chloride, metal fluoride, and interhalogen compound, the second interlayer compound is one or more types selected from arong metal oxide, metal nitride, and metal carbide, the metal chloride is a chloride of o ne o r m o re types of metals selected fr o m am ong FeC SVG 15055894.01-25-2017.IYDBP₉₄RRXEAPX2.CLM.2.22.406.2333.441.2374.svg 0.137 0.117 Chemistry Black and white CuC l 2, AICl 3 and MoCI, the metal fluoride is a fluoride of o ne or m o re types of metals selected fr o m am ong BF 3 and AsFs, the int e rhal o gen co mpound is a compound of o ne o r m o re types selected fr o m am ong IBr and ICl, 3 Application No. 15/055,894 Reply to Office Action of No vember 21, 2 016 the m etal oxide is an oxide of one or m o re types of metals selected f rom among Fe 2 O 3, CuO, A₁ 2 0 3 and MoO 2, th e metal nitride is a nitride of one or m o re types of metals selected f rom among Fe 3 N, Cu 3 N 2, AIN and MoN,, and th e metal carbide is a carbide of one or mo re types of metals selected from a mong Fe 3 C, Cu₂C, A₁ 4 C 3 and Mo 2 C.
(Or igin al) The structure according to claim 1, wherein the multilayer graphene is p o lycrystalli ne graphene.
8. T h e structure acc o rding to claim 1, wherein a wiring width of the multilayer graphene i s 2 0 nrm o r less.
The structure acc o rding to claim 1, wherein the first interlayer compound and the s econ d interlayer compound contain a common metal. 1 0. (Currently A m end e d) T he structure according to claim l [[3]], wherein the second interlayer compound exists o n entirety of the side surface of t he multilayer graphene.
1 1. The structure acc o rding to claim 1 [[3]], wherein t h e second interlayer compound exists o n entirety of side surfaces of the multilayer g r aphene.
(Cur rently Amended) T he structure according to claim 1 [[3]], wherein the second interlayer co mpo und is i n physical contact with an edge of the multilayer graphene.
Claims 3-4. canceled
canceled
5. The structure according to claim I, wherein the first interlayer compound is one or more types selected from among metal chloride, metal fluoride, alkali metal, alkaline-earth metal, halogen, and interhalogen compaund the second interlayer compound is one or more types selected from among metal oxide, metal nitride, and metal carbide, the metal chloride is a chloride of one o r m o re types of metals selected from a mong F e, Cu, Al and Mo, 2 Application No. 15/055,894 Reply to Office Action of the metal fluoride is a fluoride of one or m o re types of metals selected from among B and As, the alkali metal is o ne or m o re types selected from among Li, Na and K, the alkaline-earth metal is o ne or m ore ty p es selected fr om am o ng Mg and Ca, the halogen is o ne or m o re types selected fr o m a m ong F 2, C₁ 2, Br 2 and I2, the interhalog e n c ompo und is a compound of I and o ne or mo re types selected from amo ng F, Cl and Br, the metal oxide is an oxide of o ne or mo re types of metals selected fr om amo ng Fe, Cu, Al and M o, the metal nitride is a nitride of o ne o r more types of metals selected fr om amo ng F e, Cu, A l and M o, and the metal carbide is a carbide of one o r m o re types of metals s e lecte d fro m am o ng Fe, Cu, A l and M o.
Claims 13 -2 0. canceled
canceled
canceled
canceled
canceled
canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene wiring structure
Materials described outside the worked examples.
multilayer graphene
first interlayer compound
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3 is a graph showing Raman shift of the graphene wiring structure of the embodiment; [0007]
Related documents with shared materials, methods, properties, or citations.
second interlayer compound (oxide, nitride, or carbide)
metal chloride
metal fluoride
alkali metal
alkaline-earth metal
interhalogen compound
metal oxide
metal nitride
metal carbide
halogen
polycrystalline graphene
FeCl₃
CuCl₂
AlCl₃
MoCl₅
BF₃
AsF₅
IBr
ICl
Fe₂O₃
CuO
Al₂O₃
MoO₂
Fe₃N
Cu₃N₂
AlN
MoN
Fe₃C
Cu₂C
Al₄C₃
Mo₂C
FIG. 3 is a graph showing Raman shift of the graphene wiring structure of the embodiment; [0007]
FIG. 4 is a graph showing Raman shift of the graphene wiring structure of the embodiment; 10 [0008]
FIG. 4 is a graph showing Raman shift of the graphene wiring structure of the embodiment; 10 [0008]
FIG. 5 is a graph showing Raman shift of the graphene wiring structure of the embodiment; and
FIG. 5 is a graph showing Raman shift of the graphene wiring structure of the embodiment; and
ELECTRONIC DEVICE HAVING GRAPHENE-SEMICONDUCTOR MULTI-JUNCTION AND METHOD OF MANUFACTURING THE ELECTRONIC DEVICE
second interlayer compound (oxide, nitride, or carbide)
metal chloride
metal fluoride
alkali metal
alkaline-earth metal
interhalogen compound
metal oxide
metal nitride
metal carbide
halogen
polycrystalline graphene
FeCl₃
CuCl₂
AlCl₃
MoCl₅
BF₃
AsF₅
IBr
ICl
Fe₂O₃
CuO
Al₂O₃
MoO₂
Fe₃N
Cu₃N₂
AlN
MoN
Fe₃C
Cu₂C
Al₄C₃
Mo₂C
FIG. 3 is a graph showing Raman shift of the graphene wiring structure of the embodiment; [0007]
FIG. 4 is a graph showing Raman shift of the graphene wiring structure of the embodiment; 10 [0008]
FIG. 4 is a graph showing Raman shift of the graphene wiring structure of the embodiment; 10 [0008]
FIG. 5 is a graph showing Raman shift of the graphene wiring structure of the embodiment; and
FIG. 5 is a graph showing Raman shift of the graphene wiring structure of the embodiment; and
ELECTRONIC DEVICE HAVING GRAPHENE-SEMICONDUCTOR MULTI-JUNCTION AND METHOD OF MANUFACTURING THE ELECTRONIC DEVICE
second interlayer compound (oxide, nitride, or carbide)
metal chloride
metal fluoride
alkali metal
alkaline-earth metal
interhalogen compound
metal oxide
metal nitride
metal carbide
halogen
polycrystalline graphene
FeCl₃
CuCl₂
AlCl₃
MoCl₅
BF₃
AsF₅
IBr
ICl
Fe₂O₃
CuO
Al₂O₃
MoO₂
Fe₃N
Cu₃N₂
AlN
MoN
Fe₃C
Cu₂C
Al₄C₃
Mo₂C
FIG. 3 is a graph showing Raman shift of the graphene wiring structure of the embodiment; [0007]
FIG. 4 is a graph showing Raman shift of the graphene wiring structure of the embodiment; 10 [0008]
FIG. 4 is a graph showing Raman shift of the graphene wiring structure of the embodiment; 10 [0008]
FIG. 5 is a graph showing Raman shift of the graphene wiring structure of the embodiment; and
FIG. 5 is a graph showing Raman shift of the graphene wiring structure of the embodiment; and
ELECTRONIC DEVICE HAVING GRAPHENE-SEMICONDUCTOR MULTI-JUNCTION AND METHOD OF MANUFACTURING THE ELECTRONIC DEVICE
second interlayer compound (oxide, nitride, or carbide)
metal chloride
metal fluoride
alkali metal
alkaline-earth metal
interhalogen compound
metal oxide
metal nitride
metal carbide
halogen
polycrystalline graphene
FeCl₃
CuCl₂
AlCl₃
MoCl₅
BF₃
AsF₅
IBr
ICl
Fe₂O₃
CuO
Al₂O₃
MoO₂
Fe₃N
Cu₃N₂
AlN
MoN
Fe₃C
Cu₂C
Al₄C₃
Mo₂C
FIG. 3 is a graph showing Raman shift of the graphene wiring structure of the embodiment; [0007]
FIG. 4 is a graph showing Raman shift of the graphene wiring structure of the embodiment; 10 [0008]
FIG. 4 is a graph showing Raman shift of the graphene wiring structure of the embodiment; 10 [0008]
FIG. 5 is a graph showing Raman shift of the graphene wiring structure of the embodiment; and
FIG. 5 is a graph showing Raman shift of the graphene wiring structure of the embodiment; and
ELECTRONIC DEVICE HAVING GRAPHENE-SEMICONDUCTOR MULTI-JUNCTION AND METHOD OF MANUFACTURING THE ELECTRONIC DEVICE