Patent
US 10,535,802LIGHT EMITTING DEVICE LIGHT-AMPLIFIED WITH GRAPHENE AND METHOD FOR MANUFACTURING SAME
Suk Ho Choi
US
Copyright © 2026 Matter42. All rights reserved.
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Atlas literature
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US 10,535,802Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic view illustrating a process for fabricating a light emitting device according to an exemplary embodiment of the present invention; [0034]
FIG. 2 is a schematic view illustrating a process for fabricating a light emitting device according to another exemplary embodiment of the present invention; …
FIG. 3 is a view illustrating a process of doping graphene with a p-type or n-type impurity according to an exemplary embodiment of the present invention; …
FIG. 4 shows Raman spectrum data of zinc oxide electrode films depending on whether or not graphene is present, according to an exemplary embodiment of the …
FIG. 5 is a graph showing photoluminescence (PL) intensities of the zin c oxide electrode films depending on whether or not graphene is present, according to an …
FIG. 6 is a graph showing PL intensities of a zin c oxide electrode film on which graphene is not transferred, and a zin c oxide electrode film on which n-type …
FIG. 7 is a graph showing PL intensities of a zin c oxide electrode film on which graphene is not transferred, and a zin c oxide electrode film on which p-type …
FIG. 8 is a graph showing PL enhancements of zin c oxide electrode films on which graphene is transferred depending on a concentration of an impurity doped into …
FIG. 9 is a graph showing a transmittance of light with respect to the amount of an impurity doped into n-type graphene, according to an exemplary embodiment …
FIG. 10 is a graph showing a transmittance of light with respect to the amount of an impurity doped into p-type graphene, according to an exemplary embodiment …
FIG. 11 shows Raman spectrum data of a p-type graphene/Ga-doped zin c oxide structure according to an exemplary embodiment of the present invention; [0044]
FIG. 12 shows Raman spectrum data of Ga-doped zin c oxide without graphene according to an exemplary embodiment of the present invention; [0045]
FIG. 13 is a current-voltage curve of a GaN light emitting diode (LED) using a p-type graphene/Ga-doped zin c oxide electrode, according to an exemplary …
FIG. 14 is a current-voltage curve of a GaN light emitting diode (LED) using a Ga- doped zin c oxide electrode without graphene, according to an exemplary …
FIG. 15 is an electroluminescence (EL) spectrum of a GaN light emitting diode (LED) using a p-type graphene/Ga-doped zin c oxide electrode, according to an …
FIG. 16 is an EL spectrum of a GaN light emitting diode (LED) using a Ga-doped zin c oxide electrode without graphene, according to an exemplary embodiment of …
FIG. 17 is a diagram illustrating results obtained by averaging EL intensities and EL enhancement ratios of thirty GaN light emitting diodes depending on …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for fabricating a light emitting device of a graphene/zin e oxide electrode, the method comprising: forming a first electrode thin film composed of Zin c Oxide doped with Ga on an upper surface of a p-type semiconductor layer of a light emitting diode in which an active layer is interposed between the p-type semiconductor and an n-type semiconductor layer; transferring an n -type graphene having a concentration of a n-type impurity contained in the n-type graphene from 1mM to 5mM on the first electrode thin film; exposing a portion of the n-type semiconductor layer by etching the n-type graphene, the first electrode thin film, and a part of the light emitting diode, thereby forming an etched area and a non-etched area; spin-coating a photoresist on the etched area and the non-etched area; removing the photoresist from the etched area and the nonetched area, and forming a circularly-shaped first electrode thin film from the n-type graphene on the non- etched area; and forming a second electrode on the etched area by depositing a metal on the n-type semiconductor layer, wherein the n-type, wherein the n-type graphene increases a light emission efficiency of the light emitting device by plasmon effects of the n-type graphene. Currently amended
The method of claim 1, further comprising: exposing a portion of the first electrode thin film by removing a portion of the n-type graphene through a photolithography process, prior to the depositing of the metal on the n-type semiconductor layer. Currently amended
The method of claim 1, wherein the first electrode is a graphene/zin e oxide electrode thin film, and the metal on the n-type semiconductor layer is gold. Currently amended
The method of claim 1, wherein the n-type graphene contains at least one element selected from a group consisting of nitrogen (N), fluorine (F), and manganese (Mn), or contains ammonia, benzyl viologen (BV) or mixtures thereof. Previously presented
The method of claim 1, wherein the doping of the graphene is performed through annealing under a nitrogen atmosphere. Original
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene/zinc oxide electrode light emitting device
Materials described outside the worked examples.
Zinc Oxide doped with Ga
Ga:ZnO
n-type graphene
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 4 shows Raman spectrum data of zinc oxide electrode films depending on whether or not graphene is present, according to an exemplary embodiment of the …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Duration | 1–10 minutes | — |
Duration |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,535,802Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic view illustrating a process for fabricating a light emitting device according to an exemplary embodiment of the present invention; [0034]
FIG. 2 is a schematic view illustrating a process for fabricating a light emitting device according to another exemplary embodiment of the present invention; …
FIG. 3 is a view illustrating a process of doping graphene with a p-type or n-type impurity according to an exemplary embodiment of the present invention; …
FIG. 4 shows Raman spectrum data of zinc oxide electrode films depending on whether or not graphene is present, according to an exemplary embodiment of the …
FIG. 5 is a graph showing photoluminescence (PL) intensities of the zin c oxide electrode films depending on whether or not graphene is present, according to an …
FIG. 6 is a graph showing PL intensities of a zin c oxide electrode film on which graphene is not transferred, and a zin c oxide electrode film on which n-type …
FIG. 7 is a graph showing PL intensities of a zin c oxide electrode film on which graphene is not transferred, and a zin c oxide electrode film on which p-type …
FIG. 8 is a graph showing PL enhancements of zin c oxide electrode films on which graphene is transferred depending on a concentration of an impurity doped into …
FIG. 9 is a graph showing a transmittance of light with respect to the amount of an impurity doped into n-type graphene, according to an exemplary embodiment …
FIG. 10 is a graph showing a transmittance of light with respect to the amount of an impurity doped into p-type graphene, according to an exemplary embodiment …
FIG. 11 shows Raman spectrum data of a p-type graphene/Ga-doped zin c oxide structure according to an exemplary embodiment of the present invention; [0044]
FIG. 12 shows Raman spectrum data of Ga-doped zin c oxide without graphene according to an exemplary embodiment of the present invention; [0045]
FIG. 13 is a current-voltage curve of a GaN light emitting diode (LED) using a p-type graphene/Ga-doped zin c oxide electrode, according to an exemplary …
FIG. 14 is a current-voltage curve of a GaN light emitting diode (LED) using a Ga- doped zin c oxide electrode without graphene, according to an exemplary …
FIG. 15 is an electroluminescence (EL) spectrum of a GaN light emitting diode (LED) using a p-type graphene/Ga-doped zin c oxide electrode, according to an …
FIG. 16 is an EL spectrum of a GaN light emitting diode (LED) using a Ga-doped zin c oxide electrode without graphene, according to an exemplary embodiment of …
FIG. 17 is a diagram illustrating results obtained by averaging EL intensities and EL enhancement ratios of thirty GaN light emitting diodes depending on …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for fabricating a light emitting device of a graphene/zin e oxide electrode, the method comprising: forming a first electrode thin film composed of Zin c Oxide doped with Ga on an upper surface of a p-type semiconductor layer of a light emitting diode in which an active layer is interposed between the p-type semiconductor and an n-type semiconductor layer; transferring an n -type graphene having a concentration of a n-type impurity contained in the n-type graphene from 1mM to 5mM on the first electrode thin film; exposing a portion of the n-type semiconductor layer by etching the n-type graphene, the first electrode thin film, and a part of the light emitting diode, thereby forming an etched area and a non-etched area; spin-coating a photoresist on the etched area and the non-etched area; removing the photoresist from the etched area and the nonetched area, and forming a circularly-shaped first electrode thin film from the n-type graphene on the non- etched area; and forming a second electrode on the etched area by depositing a metal on the n-type semiconductor layer, wherein the n-type, wherein the n-type graphene increases a light emission efficiency of the light emitting device by plasmon effects of the n-type graphene. Currently amended
The method of claim 1, further comprising: exposing a portion of the first electrode thin film by removing a portion of the n-type graphene through a photolithography process, prior to the depositing of the metal on the n-type semiconductor layer. Currently amended
The method of claim 1, wherein the first electrode is a graphene/zin e oxide electrode thin film, and the metal on the n-type semiconductor layer is gold. Currently amended
The method of claim 1, wherein the n-type graphene contains at least one element selected from a group consisting of nitrogen (N), fluorine (F), and manganese (Mn), or contains ammonia, benzyl viologen (BV) or mixtures thereof. Previously presented
The method of claim 1, wherein the doping of the graphene is performed through annealing under a nitrogen atmosphere. Original
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene/zinc oxide electrode light emitting device
Materials described outside the worked examples.
Zinc Oxide doped with Ga
Ga:ZnO
n-type graphene
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 4 shows Raman spectrum data of zinc oxide electrode films depending on whether or not graphene is present, according to an exemplary embodiment of the …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Duration | 1–10 minutes | — |
Duration |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,535,802Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic view illustrating a process for fabricating a light emitting device according to an exemplary embodiment of the present invention; [0034]
FIG. 2 is a schematic view illustrating a process for fabricating a light emitting device according to another exemplary embodiment of the present invention; …
FIG. 3 is a view illustrating a process of doping graphene with a p-type or n-type impurity according to an exemplary embodiment of the present invention; …
FIG. 4 shows Raman spectrum data of zinc oxide electrode films depending on whether or not graphene is present, according to an exemplary embodiment of the …
FIG. 5 is a graph showing photoluminescence (PL) intensities of the zin c oxide electrode films depending on whether or not graphene is present, according to an …
FIG. 6 is a graph showing PL intensities of a zin c oxide electrode film on which graphene is not transferred, and a zin c oxide electrode film on which n-type …
FIG. 7 is a graph showing PL intensities of a zin c oxide electrode film on which graphene is not transferred, and a zin c oxide electrode film on which p-type …
FIG. 8 is a graph showing PL enhancements of zin c oxide electrode films on which graphene is transferred depending on a concentration of an impurity doped into …
FIG. 9 is a graph showing a transmittance of light with respect to the amount of an impurity doped into n-type graphene, according to an exemplary embodiment …
FIG. 10 is a graph showing a transmittance of light with respect to the amount of an impurity doped into p-type graphene, according to an exemplary embodiment …
FIG. 11 shows Raman spectrum data of a p-type graphene/Ga-doped zin c oxide structure according to an exemplary embodiment of the present invention; [0044]
FIG. 12 shows Raman spectrum data of Ga-doped zin c oxide without graphene according to an exemplary embodiment of the present invention; [0045]
FIG. 13 is a current-voltage curve of a GaN light emitting diode (LED) using a p-type graphene/Ga-doped zin c oxide electrode, according to an exemplary …
FIG. 14 is a current-voltage curve of a GaN light emitting diode (LED) using a Ga- doped zin c oxide electrode without graphene, according to an exemplary …
FIG. 15 is an electroluminescence (EL) spectrum of a GaN light emitting diode (LED) using a p-type graphene/Ga-doped zin c oxide electrode, according to an …
FIG. 16 is an EL spectrum of a GaN light emitting diode (LED) using a Ga-doped zin c oxide electrode without graphene, according to an exemplary embodiment of …
FIG. 17 is a diagram illustrating results obtained by averaging EL intensities and EL enhancement ratios of thirty GaN light emitting diodes depending on …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for fabricating a light emitting device of a graphene/zin e oxide electrode, the method comprising: forming a first electrode thin film composed of Zin c Oxide doped with Ga on an upper surface of a p-type semiconductor layer of a light emitting diode in which an active layer is interposed between the p-type semiconductor and an n-type semiconductor layer; transferring an n -type graphene having a concentration of a n-type impurity contained in the n-type graphene from 1mM to 5mM on the first electrode thin film; exposing a portion of the n-type semiconductor layer by etching the n-type graphene, the first electrode thin film, and a part of the light emitting diode, thereby forming an etched area and a non-etched area; spin-coating a photoresist on the etched area and the non-etched area; removing the photoresist from the etched area and the nonetched area, and forming a circularly-shaped first electrode thin film from the n-type graphene on the non- etched area; and forming a second electrode on the etched area by depositing a metal on the n-type semiconductor layer, wherein the n-type, wherein the n-type graphene increases a light emission efficiency of the light emitting device by plasmon effects of the n-type graphene. Currently amended
The method of claim 1, further comprising: exposing a portion of the first electrode thin film by removing a portion of the n-type graphene through a photolithography process, prior to the depositing of the metal on the n-type semiconductor layer. Currently amended
The method of claim 1, wherein the first electrode is a graphene/zin e oxide electrode thin film, and the metal on the n-type semiconductor layer is gold. Currently amended
The method of claim 1, wherein the n-type graphene contains at least one element selected from a group consisting of nitrogen (N), fluorine (F), and manganese (Mn), or contains ammonia, benzyl viologen (BV) or mixtures thereof. Previously presented
The method of claim 1, wherein the doping of the graphene is performed through annealing under a nitrogen atmosphere. Original
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene/zinc oxide electrode light emitting device
Materials described outside the worked examples.
Zinc Oxide doped with Ga
Ga:ZnO
n-type graphene
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 4 shows Raman spectrum data of zinc oxide electrode films depending on whether or not graphene is present, according to an exemplary embodiment of the …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Duration | 1–10 minutes | — |
Duration |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,535,802Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic view illustrating a process for fabricating a light emitting device according to an exemplary embodiment of the present invention; [0034]
FIG. 2 is a schematic view illustrating a process for fabricating a light emitting device according to another exemplary embodiment of the present invention; …
FIG. 3 is a view illustrating a process of doping graphene with a p-type or n-type impurity according to an exemplary embodiment of the present invention; …
FIG. 4 shows Raman spectrum data of zinc oxide electrode films depending on whether or not graphene is present, according to an exemplary embodiment of the …
FIG. 5 is a graph showing photoluminescence (PL) intensities of the zin c oxide electrode films depending on whether or not graphene is present, according to an …
FIG. 6 is a graph showing PL intensities of a zin c oxide electrode film on which graphene is not transferred, and a zin c oxide electrode film on which n-type …
FIG. 7 is a graph showing PL intensities of a zin c oxide electrode film on which graphene is not transferred, and a zin c oxide electrode film on which p-type …
FIG. 8 is a graph showing PL enhancements of zin c oxide electrode films on which graphene is transferred depending on a concentration of an impurity doped into …
FIG. 9 is a graph showing a transmittance of light with respect to the amount of an impurity doped into n-type graphene, according to an exemplary embodiment …
FIG. 10 is a graph showing a transmittance of light with respect to the amount of an impurity doped into p-type graphene, according to an exemplary embodiment …
FIG. 11 shows Raman spectrum data of a p-type graphene/Ga-doped zin c oxide structure according to an exemplary embodiment of the present invention; [0044]
FIG. 12 shows Raman spectrum data of Ga-doped zin c oxide without graphene according to an exemplary embodiment of the present invention; [0045]
FIG. 13 is a current-voltage curve of a GaN light emitting diode (LED) using a p-type graphene/Ga-doped zin c oxide electrode, according to an exemplary …
FIG. 14 is a current-voltage curve of a GaN light emitting diode (LED) using a Ga- doped zin c oxide electrode without graphene, according to an exemplary …
FIG. 15 is an electroluminescence (EL) spectrum of a GaN light emitting diode (LED) using a p-type graphene/Ga-doped zin c oxide electrode, according to an …
FIG. 16 is an EL spectrum of a GaN light emitting diode (LED) using a Ga-doped zin c oxide electrode without graphene, according to an exemplary embodiment of …
FIG. 17 is a diagram illustrating results obtained by averaging EL intensities and EL enhancement ratios of thirty GaN light emitting diodes depending on …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for fabricating a light emitting device of a graphene/zin e oxide electrode, the method comprising: forming a first electrode thin film composed of Zin c Oxide doped with Ga on an upper surface of a p-type semiconductor layer of a light emitting diode in which an active layer is interposed between the p-type semiconductor and an n-type semiconductor layer; transferring an n -type graphene having a concentration of a n-type impurity contained in the n-type graphene from 1mM to 5mM on the first electrode thin film; exposing a portion of the n-type semiconductor layer by etching the n-type graphene, the first electrode thin film, and a part of the light emitting diode, thereby forming an etched area and a non-etched area; spin-coating a photoresist on the etched area and the non-etched area; removing the photoresist from the etched area and the nonetched area, and forming a circularly-shaped first electrode thin film from the n-type graphene on the non- etched area; and forming a second electrode on the etched area by depositing a metal on the n-type semiconductor layer, wherein the n-type, wherein the n-type graphene increases a light emission efficiency of the light emitting device by plasmon effects of the n-type graphene. Currently amended
The method of claim 1, further comprising: exposing a portion of the first electrode thin film by removing a portion of the n-type graphene through a photolithography process, prior to the depositing of the metal on the n-type semiconductor layer. Currently amended
The method of claim 1, wherein the first electrode is a graphene/zin e oxide electrode thin film, and the metal on the n-type semiconductor layer is gold. Currently amended
The method of claim 1, wherein the n-type graphene contains at least one element selected from a group consisting of nitrogen (N), fluorine (F), and manganese (Mn), or contains ammonia, benzyl viologen (BV) or mixtures thereof. Previously presented
The method of claim 1, wherein the doping of the graphene is performed through annealing under a nitrogen atmosphere. Original
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene/zinc oxide electrode light emitting device
Materials described outside the worked examples.
Zinc Oxide doped with Ga
Ga:ZnO
n-type graphene
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 4 shows Raman spectrum data of zinc oxide electrode films depending on whether or not graphene is present, according to an exemplary embodiment of the …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Duration | 1–10 minutes | — |
Duration |
Related documents with shared materials, methods, properties, or citations.
gold
Au
n-type graphene dopants: N, F, Mn, ammonia, benzyl viologen
p-type graphene
n-GaN
p-GaN
multi-quantum well layer
FIG. 5 is a graph showing photoluminescence (PL) intensities of the zin c oxide electrode films depending on whether or not graphene is present, according to an …
FIG. 5 is a graph showing photoluminescence (PL) intensities of the zin c oxide electrode films depending on whether or not graphene is present, according to an …
FIG. 6 is a graph showing PL intensities of a zin c oxide electrode film on which graphene is not transferred, and a zin c oxide electrode film on which n-type …
FIG. 6 is a graph showing PL intensities of a zin c oxide electrode film on which graphene is not transferred, and a zin c oxide electrode film on which n-type …
FIG. 7 is a graph showing PL intensities of a zin c oxide electrode film on which graphene is not transferred, and a zin c oxide electrode film on which p-type …
FIG. 7 is a graph showing PL intensities of a zin c oxide electrode film on which graphene is not transferred, and a zin c oxide electrode film on which p-type …
FIG. 8 is a graph showing PL enhancements of zin c oxide electrode films on which graphene is transferred depending on a concentration of an impurity doped into …
FIG. 8 is a graph showing PL enhancements of zin c oxide electrode films on which graphene is transferred depending on a concentration of an impurity doped into …
FIG. 9 is a graph showing a transmittance of light with respect to the amount of an impurity doped into n-type graphene, according to an exemplary embodiment …
FIG. 10 is a graph showing a transmittance of light with respect to the amount of an impurity doped into p-type graphene, according to an exemplary embodiment …
FIG. 11 shows Raman spectrum data of a p-type graphene/Ga-doped zin c oxide structure according to an exemplary embodiment of the present invention; [0044]
FIG. 12 shows Raman spectrum data of Ga-doped zin c oxide without graphene according to an exemplary embodiment of the present invention; [0045]
| — |
Thickness | 1–50 mM | — |
Thickness | 3–15 mM | — |
Thickness | ≤ 10 mM | — |
Thickness | 1–5 mM | — |
Temperature | 700–1200 °C | — |
Duration | 3–10 minutes | — |
gold
Au
n-type graphene dopants: N, F, Mn, ammonia, benzyl viologen
p-type graphene
n-GaN
p-GaN
multi-quantum well layer
FIG. 5 is a graph showing photoluminescence (PL) intensities of the zin c oxide electrode films depending on whether or not graphene is present, according to an …
FIG. 5 is a graph showing photoluminescence (PL) intensities of the zin c oxide electrode films depending on whether or not graphene is present, according to an …
FIG. 6 is a graph showing PL intensities of a zin c oxide electrode film on which graphene is not transferred, and a zin c oxide electrode film on which n-type …
FIG. 6 is a graph showing PL intensities of a zin c oxide electrode film on which graphene is not transferred, and a zin c oxide electrode film on which n-type …
FIG. 7 is a graph showing PL intensities of a zin c oxide electrode film on which graphene is not transferred, and a zin c oxide electrode film on which p-type …
FIG. 7 is a graph showing PL intensities of a zin c oxide electrode film on which graphene is not transferred, and a zin c oxide electrode film on which p-type …
FIG. 8 is a graph showing PL enhancements of zin c oxide electrode films on which graphene is transferred depending on a concentration of an impurity doped into …
FIG. 8 is a graph showing PL enhancements of zin c oxide electrode films on which graphene is transferred depending on a concentration of an impurity doped into …
FIG. 9 is a graph showing a transmittance of light with respect to the amount of an impurity doped into n-type graphene, according to an exemplary embodiment …
FIG. 10 is a graph showing a transmittance of light with respect to the amount of an impurity doped into p-type graphene, according to an exemplary embodiment …
FIG. 11 shows Raman spectrum data of a p-type graphene/Ga-doped zin c oxide structure according to an exemplary embodiment of the present invention; [0044]
FIG. 12 shows Raman spectrum data of Ga-doped zin c oxide without graphene according to an exemplary embodiment of the present invention; [0045]
| — |
Thickness | 1–50 mM | — |
Thickness | 3–15 mM | — |
Thickness | ≤ 10 mM | — |
Thickness | 1–5 mM | — |
Temperature | 700–1200 °C | — |
Duration | 3–10 minutes | — |
gold
Au
n-type graphene dopants: N, F, Mn, ammonia, benzyl viologen
p-type graphene
n-GaN
p-GaN
multi-quantum well layer
FIG. 5 is a graph showing photoluminescence (PL) intensities of the zin c oxide electrode films depending on whether or not graphene is present, according to an …
FIG. 5 is a graph showing photoluminescence (PL) intensities of the zin c oxide electrode films depending on whether or not graphene is present, according to an …
FIG. 6 is a graph showing PL intensities of a zin c oxide electrode film on which graphene is not transferred, and a zin c oxide electrode film on which n-type …
FIG. 6 is a graph showing PL intensities of a zin c oxide electrode film on which graphene is not transferred, and a zin c oxide electrode film on which n-type …
FIG. 7 is a graph showing PL intensities of a zin c oxide electrode film on which graphene is not transferred, and a zin c oxide electrode film on which p-type …
FIG. 7 is a graph showing PL intensities of a zin c oxide electrode film on which graphene is not transferred, and a zin c oxide electrode film on which p-type …
FIG. 8 is a graph showing PL enhancements of zin c oxide electrode films on which graphene is transferred depending on a concentration of an impurity doped into …
FIG. 8 is a graph showing PL enhancements of zin c oxide electrode films on which graphene is transferred depending on a concentration of an impurity doped into …
FIG. 9 is a graph showing a transmittance of light with respect to the amount of an impurity doped into n-type graphene, according to an exemplary embodiment …
FIG. 10 is a graph showing a transmittance of light with respect to the amount of an impurity doped into p-type graphene, according to an exemplary embodiment …
FIG. 11 shows Raman spectrum data of a p-type graphene/Ga-doped zin c oxide structure according to an exemplary embodiment of the present invention; [0044]
FIG. 12 shows Raman spectrum data of Ga-doped zin c oxide without graphene according to an exemplary embodiment of the present invention; [0045]
| — |
Thickness | 1–50 mM | — |
Thickness | 3–15 mM | — |
Thickness | ≤ 10 mM | — |
Thickness | 1–5 mM | — |
Temperature | 700–1200 °C | — |
Duration | 3–10 minutes | — |
gold
Au
n-type graphene dopants: N, F, Mn, ammonia, benzyl viologen
p-type graphene
n-GaN
p-GaN
multi-quantum well layer
FIG. 5 is a graph showing photoluminescence (PL) intensities of the zin c oxide electrode films depending on whether or not graphene is present, according to an …
FIG. 5 is a graph showing photoluminescence (PL) intensities of the zin c oxide electrode films depending on whether or not graphene is present, according to an …
FIG. 6 is a graph showing PL intensities of a zin c oxide electrode film on which graphene is not transferred, and a zin c oxide electrode film on which n-type …
FIG. 6 is a graph showing PL intensities of a zin c oxide electrode film on which graphene is not transferred, and a zin c oxide electrode film on which n-type …
FIG. 7 is a graph showing PL intensities of a zin c oxide electrode film on which graphene is not transferred, and a zin c oxide electrode film on which p-type …
FIG. 7 is a graph showing PL intensities of a zin c oxide electrode film on which graphene is not transferred, and a zin c oxide electrode film on which p-type …
FIG. 8 is a graph showing PL enhancements of zin c oxide electrode films on which graphene is transferred depending on a concentration of an impurity doped into …
FIG. 8 is a graph showing PL enhancements of zin c oxide electrode films on which graphene is transferred depending on a concentration of an impurity doped into …
FIG. 9 is a graph showing a transmittance of light with respect to the amount of an impurity doped into n-type graphene, according to an exemplary embodiment …
FIG. 10 is a graph showing a transmittance of light with respect to the amount of an impurity doped into p-type graphene, according to an exemplary embodiment …
FIG. 11 shows Raman spectrum data of a p-type graphene/Ga-doped zin c oxide structure according to an exemplary embodiment of the present invention; [0044]
FIG. 12 shows Raman spectrum data of Ga-doped zin c oxide without graphene according to an exemplary embodiment of the present invention; [0045]
| — |
Thickness | 1–50 mM | — |
Thickness | 3–15 mM | — |
Thickness | ≤ 10 mM | — |
Thickness | 1–5 mM | — |
Temperature | 700–1200 °C | — |
Duration | 3–10 minutes | — |