Patent
US 8,877,572GRAPHENE DEVICE MANUFACTURING APPARATUS AND GRAPHENE DEVICE MANUFACTURING METHOD USING THE APPARATUS
Joo-ho LEE
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 8,877,572Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates a schematic structure of a graphene device manufacturing apparatus according to example embodiments; [30]
FIG. 2 illustrates a schematic structure a graphene device manufacturing apparatus according to other example embodiments; [31]
FIGS. 3A to 3H illustrate a graphene device manufacturing method according to example embodiments; [32]
FIG. 4 is a graph illustrating Raman Shift after transferring a graphene layer on a target substrate; [33]
FIG. 5 illustrates a structure of a graphene device manufactured by a graphene device manufacturing method according to example embodiments; and [34]
FIG. 6 illustrates another structure of a graphene device manufactured by a graphene device manufacturing method according to other example embodiments.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene device manufacturing apparatus, comprising: an electrode; a graphene structure including a metal catalyst layer on a substrate, a protection layer, and a graphene layer between the metal catalyst layer and protection layer; a power unit configured to apply a voltage between the electrode and the metal catalyst layer; and an electrolyte in which the graphene structure is at least partially submerged.
The graphene device manufacturing apparatus of claim 1, further comprising: an insulation layer between the substrate and the metal catalyst layer.
The graphene device manufacturing apparatus of claim 1, wherein the electrolyte includes an aqueous solution of one selected from K₂S₂₀ 8 and FeC I3.
The graphene device manufacturing apparatus of claim 1, wherein the metal catalyst layer includes at least one selected from Cu, Ni, Fe, Co, Pt, and Ru.
The graphene device manufacturing apparatus of claim 1, further comprising: 13 a tank containing the electrolyte and the graphene structure.
A graphene device manufacturing method, comprising: forming a graphene structure including a metal catalyst layer on a substrate, a protection layer, and a graphene layer between the metal catalyst layer and protection layer; separating the metal catalyst layer from the substrate by generating bubbles due to chemical reactions occurring in an area between the substrate and the metal catalyst layer; removing the metal catalyst layer separated from the substrate from the graphene structure; forming a target insulation layer to be contacted with the graphene layer on a target substrate; contacting the graphene layer on the target insulation layer on the target substrate; and removing the protection layer from the graphene structure, after contacting the graphene layer on the target insulation layer.
The graphene device manufacturing method of claim 9, wherein the separating of the metal catalyst layer from the substrate includes, placing the graphene structure in a tank containing an electrolyte and an electrode, and applying a voltage between the metal catalyst layer and the electrode.
The graphene device manufacturing method of claim 9, wherein removing of the metal catalyst layer separated from the substrate includes using a wet etching method.
The graphene device manufacturing method of claim 9, wherein the contacting of the graphene layer on the target insulation includes surface treating the target insulation layer to form hydroxyl (-OH) groups on a surface of the target insulation layer.
The graphene device manufacturing method of claim 9, wherein the contacting of the graphene layer on the target insulation layer includes using a vacuum pressing method to contact the target insulation and the graphene layer.
The graphene device manufacturing method of claim 9, wherein the forming of the graphene structure includes forming an insulation layer between the substrate and the metal catalyst layer.
The graphene device manufacturing method of claim 9, wherein the protection layer is formed of polymethyl methacrylate (PMMA).
The graphene device manufacturing method of claim 9, wherein the protection layer is formed of one selected from adhesive tape, glue, epoxy resin, thermal release tape, water-soluble tape, UV tape, patternable dry film and a photoresist material.
The graphene device manufacturing method of claim 9, wherein the protection layer includes a first layer formed of PMMA and a second layer formed of one selected from adhesive tape, glue, epoxy resin, thermal release tape, water- soluble tape, UV tape, patternable dry film, and a photoresist material.
The graphene device manufacturing method of claim 9, further comprising: forming a first electrode and a second electrode on the graphene layer, after removing the protection layer.
The graphene device manufacturing method electrode and a drain electrode on the graphene of claim 9, wherein the contacting of the forming a gate electrode between the target of claim 26, further comprising: forming a source layer, after the removing of the protection layer.
The graphene device manufacturing method graphene layer on the target insulation layer includes substrate and the target insulation layer.
Layer stacks claimed or described, ordered top of device to substrate.
graphene device manufacturing apparatus/graphene structure
graphene field-effect transistor
Materials described outside the worked examples.
graphene
metal catalyst layer
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 4 is a graph illustrating Raman Shift after transferring a graphene layer on a target substrate; [33]
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,877,572Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates a schematic structure of a graphene device manufacturing apparatus according to example embodiments; [30]
FIG. 2 illustrates a schematic structure a graphene device manufacturing apparatus according to other example embodiments; [31]
FIGS. 3A to 3H illustrate a graphene device manufacturing method according to example embodiments; [32]
FIG. 4 is a graph illustrating Raman Shift after transferring a graphene layer on a target substrate; [33]
FIG. 5 illustrates a structure of a graphene device manufactured by a graphene device manufacturing method according to example embodiments; and [34]
FIG. 6 illustrates another structure of a graphene device manufactured by a graphene device manufacturing method according to other example embodiments.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene device manufacturing apparatus, comprising: an electrode; a graphene structure including a metal catalyst layer on a substrate, a protection layer, and a graphene layer between the metal catalyst layer and protection layer; a power unit configured to apply a voltage between the electrode and the metal catalyst layer; and an electrolyte in which the graphene structure is at least partially submerged.
The graphene device manufacturing apparatus of claim 1, further comprising: an insulation layer between the substrate and the metal catalyst layer.
The graphene device manufacturing apparatus of claim 1, wherein the electrolyte includes an aqueous solution of one selected from K₂S₂₀ 8 and FeC I3.
The graphene device manufacturing apparatus of claim 1, wherein the metal catalyst layer includes at least one selected from Cu, Ni, Fe, Co, Pt, and Ru.
The graphene device manufacturing apparatus of claim 1, further comprising: 13 a tank containing the electrolyte and the graphene structure.
A graphene device manufacturing method, comprising: forming a graphene structure including a metal catalyst layer on a substrate, a protection layer, and a graphene layer between the metal catalyst layer and protection layer; separating the metal catalyst layer from the substrate by generating bubbles due to chemical reactions occurring in an area between the substrate and the metal catalyst layer; removing the metal catalyst layer separated from the substrate from the graphene structure; forming a target insulation layer to be contacted with the graphene layer on a target substrate; contacting the graphene layer on the target insulation layer on the target substrate; and removing the protection layer from the graphene structure, after contacting the graphene layer on the target insulation layer.
The graphene device manufacturing method of claim 9, wherein the separating of the metal catalyst layer from the substrate includes, placing the graphene structure in a tank containing an electrolyte and an electrode, and applying a voltage between the metal catalyst layer and the electrode.
The graphene device manufacturing method of claim 9, wherein removing of the metal catalyst layer separated from the substrate includes using a wet etching method.
The graphene device manufacturing method of claim 9, wherein the contacting of the graphene layer on the target insulation includes surface treating the target insulation layer to form hydroxyl (-OH) groups on a surface of the target insulation layer.
The graphene device manufacturing method of claim 9, wherein the contacting of the graphene layer on the target insulation layer includes using a vacuum pressing method to contact the target insulation and the graphene layer.
The graphene device manufacturing method of claim 9, wherein the forming of the graphene structure includes forming an insulation layer between the substrate and the metal catalyst layer.
The graphene device manufacturing method of claim 9, wherein the protection layer is formed of polymethyl methacrylate (PMMA).
The graphene device manufacturing method of claim 9, wherein the protection layer is formed of one selected from adhesive tape, glue, epoxy resin, thermal release tape, water-soluble tape, UV tape, patternable dry film and a photoresist material.
The graphene device manufacturing method of claim 9, wherein the protection layer includes a first layer formed of PMMA and a second layer formed of one selected from adhesive tape, glue, epoxy resin, thermal release tape, water- soluble tape, UV tape, patternable dry film, and a photoresist material.
The graphene device manufacturing method of claim 9, further comprising: forming a first electrode and a second electrode on the graphene layer, after removing the protection layer.
The graphene device manufacturing method electrode and a drain electrode on the graphene of claim 9, wherein the contacting of the forming a gate electrode between the target of claim 26, further comprising: forming a source layer, after the removing of the protection layer.
The graphene device manufacturing method graphene layer on the target insulation layer includes substrate and the target insulation layer.
Layer stacks claimed or described, ordered top of device to substrate.
graphene device manufacturing apparatus/graphene structure
graphene field-effect transistor
Materials described outside the worked examples.
graphene
metal catalyst layer
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 4 is a graph illustrating Raman Shift after transferring a graphene layer on a target substrate; [33]
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,877,572Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates a schematic structure of a graphene device manufacturing apparatus according to example embodiments; [30]
FIG. 2 illustrates a schematic structure a graphene device manufacturing apparatus according to other example embodiments; [31]
FIGS. 3A to 3H illustrate a graphene device manufacturing method according to example embodiments; [32]
FIG. 4 is a graph illustrating Raman Shift after transferring a graphene layer on a target substrate; [33]
FIG. 5 illustrates a structure of a graphene device manufactured by a graphene device manufacturing method according to example embodiments; and [34]
FIG. 6 illustrates another structure of a graphene device manufactured by a graphene device manufacturing method according to other example embodiments.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene device manufacturing apparatus, comprising: an electrode; a graphene structure including a metal catalyst layer on a substrate, a protection layer, and a graphene layer between the metal catalyst layer and protection layer; a power unit configured to apply a voltage between the electrode and the metal catalyst layer; and an electrolyte in which the graphene structure is at least partially submerged.
The graphene device manufacturing apparatus of claim 1, further comprising: an insulation layer between the substrate and the metal catalyst layer.
The graphene device manufacturing apparatus of claim 1, wherein the electrolyte includes an aqueous solution of one selected from K₂S₂₀ 8 and FeC I3.
The graphene device manufacturing apparatus of claim 1, wherein the metal catalyst layer includes at least one selected from Cu, Ni, Fe, Co, Pt, and Ru.
The graphene device manufacturing apparatus of claim 1, further comprising: 13 a tank containing the electrolyte and the graphene structure.
A graphene device manufacturing method, comprising: forming a graphene structure including a metal catalyst layer on a substrate, a protection layer, and a graphene layer between the metal catalyst layer and protection layer; separating the metal catalyst layer from the substrate by generating bubbles due to chemical reactions occurring in an area between the substrate and the metal catalyst layer; removing the metal catalyst layer separated from the substrate from the graphene structure; forming a target insulation layer to be contacted with the graphene layer on a target substrate; contacting the graphene layer on the target insulation layer on the target substrate; and removing the protection layer from the graphene structure, after contacting the graphene layer on the target insulation layer.
The graphene device manufacturing method of claim 9, wherein the separating of the metal catalyst layer from the substrate includes, placing the graphene structure in a tank containing an electrolyte and an electrode, and applying a voltage between the metal catalyst layer and the electrode.
The graphene device manufacturing method of claim 9, wherein removing of the metal catalyst layer separated from the substrate includes using a wet etching method.
The graphene device manufacturing method of claim 9, wherein the contacting of the graphene layer on the target insulation includes surface treating the target insulation layer to form hydroxyl (-OH) groups on a surface of the target insulation layer.
The graphene device manufacturing method of claim 9, wherein the contacting of the graphene layer on the target insulation layer includes using a vacuum pressing method to contact the target insulation and the graphene layer.
The graphene device manufacturing method of claim 9, wherein the forming of the graphene structure includes forming an insulation layer between the substrate and the metal catalyst layer.
The graphene device manufacturing method of claim 9, wherein the protection layer is formed of polymethyl methacrylate (PMMA).
The graphene device manufacturing method of claim 9, wherein the protection layer is formed of one selected from adhesive tape, glue, epoxy resin, thermal release tape, water-soluble tape, UV tape, patternable dry film and a photoresist material.
The graphene device manufacturing method of claim 9, wherein the protection layer includes a first layer formed of PMMA and a second layer formed of one selected from adhesive tape, glue, epoxy resin, thermal release tape, water- soluble tape, UV tape, patternable dry film, and a photoresist material.
The graphene device manufacturing method of claim 9, further comprising: forming a first electrode and a second electrode on the graphene layer, after removing the protection layer.
The graphene device manufacturing method electrode and a drain electrode on the graphene of claim 9, wherein the contacting of the forming a gate electrode between the target of claim 26, further comprising: forming a source layer, after the removing of the protection layer.
The graphene device manufacturing method graphene layer on the target insulation layer includes substrate and the target insulation layer.
Layer stacks claimed or described, ordered top of device to substrate.
graphene device manufacturing apparatus/graphene structure
graphene field-effect transistor
Materials described outside the worked examples.
graphene
metal catalyst layer
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 4 is a graph illustrating Raman Shift after transferring a graphene layer on a target substrate; [33]
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,877,572Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates a schematic structure of a graphene device manufacturing apparatus according to example embodiments; [30]
FIG. 2 illustrates a schematic structure a graphene device manufacturing apparatus according to other example embodiments; [31]
FIGS. 3A to 3H illustrate a graphene device manufacturing method according to example embodiments; [32]
FIG. 4 is a graph illustrating Raman Shift after transferring a graphene layer on a target substrate; [33]
FIG. 5 illustrates a structure of a graphene device manufactured by a graphene device manufacturing method according to example embodiments; and [34]
FIG. 6 illustrates another structure of a graphene device manufactured by a graphene device manufacturing method according to other example embodiments.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene device manufacturing apparatus, comprising: an electrode; a graphene structure including a metal catalyst layer on a substrate, a protection layer, and a graphene layer between the metal catalyst layer and protection layer; a power unit configured to apply a voltage between the electrode and the metal catalyst layer; and an electrolyte in which the graphene structure is at least partially submerged.
The graphene device manufacturing apparatus of claim 1, further comprising: an insulation layer between the substrate and the metal catalyst layer.
The graphene device manufacturing apparatus of claim 1, wherein the electrolyte includes an aqueous solution of one selected from K₂S₂₀ 8 and FeC I3.
The graphene device manufacturing apparatus of claim 1, wherein the metal catalyst layer includes at least one selected from Cu, Ni, Fe, Co, Pt, and Ru.
The graphene device manufacturing apparatus of claim 1, further comprising: 13 a tank containing the electrolyte and the graphene structure.
A graphene device manufacturing method, comprising: forming a graphene structure including a metal catalyst layer on a substrate, a protection layer, and a graphene layer between the metal catalyst layer and protection layer; separating the metal catalyst layer from the substrate by generating bubbles due to chemical reactions occurring in an area between the substrate and the metal catalyst layer; removing the metal catalyst layer separated from the substrate from the graphene structure; forming a target insulation layer to be contacted with the graphene layer on a target substrate; contacting the graphene layer on the target insulation layer on the target substrate; and removing the protection layer from the graphene structure, after contacting the graphene layer on the target insulation layer.
The graphene device manufacturing method of claim 9, wherein the separating of the metal catalyst layer from the substrate includes, placing the graphene structure in a tank containing an electrolyte and an electrode, and applying a voltage between the metal catalyst layer and the electrode.
The graphene device manufacturing method of claim 9, wherein removing of the metal catalyst layer separated from the substrate includes using a wet etching method.
The graphene device manufacturing method of claim 9, wherein the contacting of the graphene layer on the target insulation includes surface treating the target insulation layer to form hydroxyl (-OH) groups on a surface of the target insulation layer.
The graphene device manufacturing method of claim 9, wherein the contacting of the graphene layer on the target insulation layer includes using a vacuum pressing method to contact the target insulation and the graphene layer.
The graphene device manufacturing method of claim 9, wherein the forming of the graphene structure includes forming an insulation layer between the substrate and the metal catalyst layer.
The graphene device manufacturing method of claim 9, wherein the protection layer is formed of polymethyl methacrylate (PMMA).
The graphene device manufacturing method of claim 9, wherein the protection layer is formed of one selected from adhesive tape, glue, epoxy resin, thermal release tape, water-soluble tape, UV tape, patternable dry film and a photoresist material.
The graphene device manufacturing method of claim 9, wherein the protection layer includes a first layer formed of PMMA and a second layer formed of one selected from adhesive tape, glue, epoxy resin, thermal release tape, water- soluble tape, UV tape, patternable dry film, and a photoresist material.
The graphene device manufacturing method of claim 9, further comprising: forming a first electrode and a second electrode on the graphene layer, after removing the protection layer.
The graphene device manufacturing method electrode and a drain electrode on the graphene of claim 9, wherein the contacting of the forming a gate electrode between the target of claim 26, further comprising: forming a source layer, after the removing of the protection layer.
The graphene device manufacturing method graphene layer on the target insulation layer includes substrate and the target insulation layer.
Layer stacks claimed or described, ordered top of device to substrate.
graphene device manufacturing apparatus/graphene structure
graphene field-effect transistor
Materials described outside the worked examples.
graphene
metal catalyst layer
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 4 is a graph illustrating Raman Shift after transferring a graphene layer on a target substrate; [33]
Related documents with shared materials, methods, properties, or citations.
protection layer
electrolyte
insulation layer (oxide)
potassium persulfate
K₂S₂O₈
iron(III) chloride
FeCl₃
polymethyl methacrylate
polycarbonate
SU-8
FIG. 4 is a graph illustrating Raman Shift after transferring a graphene layer on a target substrate; [33]
protection layer
electrolyte
insulation layer (oxide)
potassium persulfate
K₂S₂O₈
iron(III) chloride
FeCl₃
polymethyl methacrylate
polycarbonate
SU-8
FIG. 4 is a graph illustrating Raman Shift after transferring a graphene layer on a target substrate; [33]
protection layer
electrolyte
insulation layer (oxide)
potassium persulfate
K₂S₂O₈
iron(III) chloride
FeCl₃
polymethyl methacrylate
polycarbonate
SU-8
FIG. 4 is a graph illustrating Raman Shift after transferring a graphene layer on a target substrate; [33]
protection layer
electrolyte
insulation layer (oxide)
potassium persulfate
K₂S₂O₈
iron(III) chloride
FeCl₃
polymethyl methacrylate
polycarbonate
SU-8
FIG. 4 is a graph illustrating Raman Shift after transferring a graphene layer on a target substrate; [33]