Patent
US 8,980,217Graphene substrate and Method of Manufacturing the Same
Hidefumi Hiura
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 8,980,217Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is sectional views each illustrating an overview of a method of manufacturing a graphene substrate according to a first embodiment. 5
FIG. 2. First, as illustrated in
FIG. 3(a), a layer number control method involving adjusting the amount of carbon through use of a carbon solubility curve is described. Herein, the case of …
FIG. 4. The Raman spectra of the obtained graphene 9 were measured, and the quality and the number of layers of graphene were evaluated. A specific procedure …
FIG. 5(e), as illustrated in an enlarged view 21e, 5 only an apex portion (convex portion) of each mountain in a wave-shaped (uneven) structure of the growth …
FIG. 6. Both the transistors were subjected to electrical measurement to evaluate device characteristics. A specific procedure therefor is as follows. 25 First, …
FIG. 7 is a graph showing a relationship between the quality of graphene and a heating condition at the time of manufacturing a graphene substrate according to …
FIG. 8 shows Raman spectra of the graphene 9 on the growth substrates 1 (sapphire substrates) produced through use of the amounts of carbon co rr esponding to …
FIG. 9 shows Raman spectra of the graphene 9 on the graphene substrates 10 produced thr ough use of (a) natural graphite, (b) a single-walled carbon nanotube, …
FIG. 10 shows Raman spectra of the graphene 9 produced on the diamond substrate (a), the 4H- SiC substrate (b), the 6H-SiC substrate (c), the h-BN thin film …
FIG. 11 is a graph showing Raman spectra of graphene in the case of changing the kind of a metal layer at the time of manufacturing a graphene substrate …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
: A method of manufacturing a graphene substrate, comprising the steps of: (a) bringing a metal layer into contact with a carbon-containing layer and heating the metal layer to dissolve carbon in the carbon-containing layer into the metal layer; and (b) cooling the metal layer to precipitate the carbon in the metal layer as graphene on a surface of a heat-resistant material brought into contact with the metal layer to allow the metal layer to become liquid and to dissolve carbon in the carbon-containing layer into the metal layer, wherein the metal layer comprises a metal having a carbon solubility at a ppm level and a relatively low melting point to be liquid in a heating temperature range ofaround4 G between 600 ° C and 1200 * C, and wherein (b) further comprises keeping the metal la ye r at a constant temperature between 400 ° C and 600 °C.
: The method according to claim 1, further comprising step (c) ef- removing the metal layer after t h e-step-(b).
: The method according to claim 1, wherein the metal layer includes at least one selected from the group consisting of gallium (Ga), indium (In), thallium (T l), tin (Sn), aluminum (Al), lead (Pb), bismuth (Bi), zin c (Zn), cadmium (Cd), and mercury (Hg).
: The method according to claim 1, wherein the heat- resistant material comprises at least one element or compound selected from the group consisting of an oxide, a nitride, a carbide, a fluoride, mica, and diamond.
: The method according to claim 1, wherein the heat- resistant material has an uneven shape.
: The method according to claim 1, wherein the carbon-containing layer includes at least one kind selected from the group consisting of a carbon allotrope, a low -molecular organic compound, an artificial high-molecular organic compound, a natural high-molecular organic compound, and an inorganic compound containing carbon.
: The method according to claim 1, wherein: -step-(a) comprises heating at a temperature of 600 * C or more; and the-step- (b) comprises cooling to 400 ° C at a temperature drop per unit time of 1 00°C/min or less to keep the metal layer at the constant temperature between 400 4 C and 600 °C.
: The method according to claim 1, wherein the carbon-containing layer includes one selected from the group consisting of a carbon allotrope, a low -molecular organic compound, an artificial high-molecular organic compound, a natural high-molecular organic compound, and an inorganic compound containing carbon, and wherein the carbon allotrope includes one selected from the group consisting of glassy carbon, crystalline graphite, single-walled and multi-walled carbon nanotubes, fullerene typified by C ho and C 7o, diamond, and nanodiamond, the low-molecular organic compound includes one selected from the group consisting of a metallocene, naphthalene, anthracene, and pentacene, the artificial high-molecular organic compound includes one selected from the group consisting of Teflon (registered trademark), polymethyl methacrylate (PMMA), and polyethylene, the natural high-molecular organic compound includes one selected from the group consisting of a protein, a nucleic acid, a lipid, and a polysaccharide, and 8 AMENDMENT UNDER 37 C.F.R. § 1.114(c) Application No.: 13/995,809 Attorney Docket No.: Q₂₀₄₉₄₉ the inorganic compound containing carbon includes one selected from the group consisting of silicon carbide (SiC), boron carbide (B₄C), aluminum carbide (A₁₄C₃), titanium carbide (TiC), zirconium carbide (ZrC), hafnium carbide (HfC), vanadium carbide (VC), niobium carbide (NbC), tantalum carbide (TaC), c h romium carbide (CrC), molybdenum carbide (MoC), tungsten carbide (WC), carbon nitride (C₃N₄), and boron carbon nitride (BCN).
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: A method of manufacturing a graphene substrate, SVG 13995809.09-24-2014.I₀H₈YU₆₄PXXIFW3.CLM.1.svg 0.16 1.57 Black and white (a) bringing a metal layer into contact with a carbon-containing layer and heating the metal layer to dissolve carbon in the carbon-containing layer into the metal layer; and (b) cooling the metal layer to precipitate the carbon in the metal layer as graphene on a surface of a heat-resistant material brought into contact with the metal layer, wherein t h e-s tep-(a) comprises dissolving the carbon in the carbon-containing layer into the metal layer by arranging the carbon-containing layer in a holder, arranging a spacer on the carbon-containing layer, arranging the metal layer in the spacer, arranging a layer of the heat- resistant material on the metal layer, and heating the metal layer.
: A graphene substrate, comprising a substrate and graphene formed on the substrate, said graphene having a D/G ratio of less than 1, wherein said D/G ratio is a ratio between an intensity of D-band and that of G-band obtained by Raman spectroscopy, wherein said substrate comprises a heat resistant material which includes at least one element or compound selected from the group consistin g of an oxide, a nitride, a fluoride, mica, and diamond without any carbide.
1 9.: A semiconductor device, which is manufactured through use of the graphene substrate according to claim 18.
: The graphene substrate according to claim 18, wherein, in the heat resistant material, the oxide includes one selected from the group consisting of quartz (Si O 2), alumina or sapphire (A 1 203), titanium oxide (Ti O 2), zin c oxide (Zn O), magnesium oxide (Mg O), nikkel oxide (Ni O), zirconia (Zr O 2), lithium niobate (LiNb O₃), and lithium tantalate (LiTa O 3), the nitride includes one select from the group consisting of boron nitride (BN), aluminum nitride (A l N), gallium nitride (GaN), carbon nitride (C₃N₄), and b o ron carbon nitride (BCN), and the fluoride includes one selected from the group consisting of barium fluoride (BaF₂), calcium fluoride (CaF₂), and magnesium fluoride (MgF₂).
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. canceled
: A graphene substrate comprising a substrate and graphene formed on a substrate, the graphene having a D/G ratio of less than 1, wherein the D I G ratio is a ratio between an intensity of D-band and that of G-band obtained by Raman spectroscopy, the substrate comprising a heat resistant material which includes a carbide, wherein the carbide is selected from the group consisting of boron carbide (B₄C), aluminum carbide (A₁₄C₃), titanium carbide (TiC), zirconium carbide (ZrC), hafnium carbide (HfC), vanadium carbide (VC), niobium carbide (NbC), tantalum carbide (TaC), chromium carbide (CrC), molybdenum carbide (MoC), and tungsten carbide (WC).
: A graphene substrate comprising a substrate and graphene formed on a substrate, the graphene having a D/G ratio of less than 1, wherein the D/G ratio is a ratio between an intensity of D-band and that of G-band obtained by Raman spectroscopy, the substrate comprising a heat resistant material which includes one of 4H- silicon carbide (SiC), 6H-silicon carbide (SiC), and wherein each of the 4H silicon carbide and the 6H-silicon carbide acts as a carbon supply source and a graphene growth substrate.
: A semiconductor device, which-i- manufactured SVG 13995809.09-24-2014.I₀H₈YU₆₄PXXIFW3.CLM.2.svg 0.16 7.43 Black and white
: A semiconductor device, which i- manufactured SVG 13995809.09-24-2014.I₀H₈YU₆₄PXXIFW3.CLM.3.svg 0.16 4.98 Black and white
Layer stacks claimed or described, ordered top of device to substrate.
graphene substrate
semiconductor device
graphene substrate with carbide support
Materials described outside the worked examples.
metal layer
carbon-containing layer
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3(a), a layer number control method involving adjusting the amount of carbon through use of a carbon solubility curve is described. Herein, the case of …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
D/G ratio (Raman) of claimed graphene | — | C |
Temperature | 400–600 °C |
Related documents with shared materials, methods, properties, or citations.
SEPARATOR INCLUDING LASER-INDUCED CARBONIZED GRAPHENE LAYER AND LITHIUM-SULFUR BATTERY INCLUDING THE SAME
METHOD FOR PRODUCING GRAPHENE, GRAPHENE PRODUCED ON SUBSTRATE, AND GRAPHENE ON SUBSTRATE
Patent
Atlas literature
Patent
US 8,980,217Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is sectional views each illustrating an overview of a method of manufacturing a graphene substrate according to a first embodiment. 5
FIG. 2. First, as illustrated in
FIG. 3(a), a layer number control method involving adjusting the amount of carbon through use of a carbon solubility curve is described. Herein, the case of …
FIG. 4. The Raman spectra of the obtained graphene 9 were measured, and the quality and the number of layers of graphene were evaluated. A specific procedure …
FIG. 5(e), as illustrated in an enlarged view 21e, 5 only an apex portion (convex portion) of each mountain in a wave-shaped (uneven) structure of the growth …
FIG. 6. Both the transistors were subjected to electrical measurement to evaluate device characteristics. A specific procedure therefor is as follows. 25 First, …
FIG. 7 is a graph showing a relationship between the quality of graphene and a heating condition at the time of manufacturing a graphene substrate according to …
FIG. 8 shows Raman spectra of the graphene 9 on the growth substrates 1 (sapphire substrates) produced through use of the amounts of carbon co rr esponding to …
FIG. 9 shows Raman spectra of the graphene 9 on the graphene substrates 10 produced thr ough use of (a) natural graphite, (b) a single-walled carbon nanotube, …
FIG. 10 shows Raman spectra of the graphene 9 produced on the diamond substrate (a), the 4H- SiC substrate (b), the 6H-SiC substrate (c), the h-BN thin film …
FIG. 11 is a graph showing Raman spectra of graphene in the case of changing the kind of a metal layer at the time of manufacturing a graphene substrate …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
: A method of manufacturing a graphene substrate, comprising the steps of: (a) bringing a metal layer into contact with a carbon-containing layer and heating the metal layer to dissolve carbon in the carbon-containing layer into the metal layer; and (b) cooling the metal layer to precipitate the carbon in the metal layer as graphene on a surface of a heat-resistant material brought into contact with the metal layer to allow the metal layer to become liquid and to dissolve carbon in the carbon-containing layer into the metal layer, wherein the metal layer comprises a metal having a carbon solubility at a ppm level and a relatively low melting point to be liquid in a heating temperature range ofaround4 G between 600 ° C and 1200 * C, and wherein (b) further comprises keeping the metal la ye r at a constant temperature between 400 ° C and 600 °C.
: The method according to claim 1, further comprising step (c) ef- removing the metal layer after t h e-step-(b).
: The method according to claim 1, wherein the metal layer includes at least one selected from the group consisting of gallium (Ga), indium (In), thallium (T l), tin (Sn), aluminum (Al), lead (Pb), bismuth (Bi), zin c (Zn), cadmium (Cd), and mercury (Hg).
: The method according to claim 1, wherein the heat- resistant material comprises at least one element or compound selected from the group consisting of an oxide, a nitride, a carbide, a fluoride, mica, and diamond.
: The method according to claim 1, wherein the heat- resistant material has an uneven shape.
: The method according to claim 1, wherein the carbon-containing layer includes at least one kind selected from the group consisting of a carbon allotrope, a low -molecular organic compound, an artificial high-molecular organic compound, a natural high-molecular organic compound, and an inorganic compound containing carbon.
: The method according to claim 1, wherein: -step-(a) comprises heating at a temperature of 600 * C or more; and the-step- (b) comprises cooling to 400 ° C at a temperature drop per unit time of 1 00°C/min or less to keep the metal layer at the constant temperature between 400 4 C and 600 °C.
: The method according to claim 1, wherein the carbon-containing layer includes one selected from the group consisting of a carbon allotrope, a low -molecular organic compound, an artificial high-molecular organic compound, a natural high-molecular organic compound, and an inorganic compound containing carbon, and wherein the carbon allotrope includes one selected from the group consisting of glassy carbon, crystalline graphite, single-walled and multi-walled carbon nanotubes, fullerene typified by C ho and C 7o, diamond, and nanodiamond, the low-molecular organic compound includes one selected from the group consisting of a metallocene, naphthalene, anthracene, and pentacene, the artificial high-molecular organic compound includes one selected from the group consisting of Teflon (registered trademark), polymethyl methacrylate (PMMA), and polyethylene, the natural high-molecular organic compound includes one selected from the group consisting of a protein, a nucleic acid, a lipid, and a polysaccharide, and 8 AMENDMENT UNDER 37 C.F.R. § 1.114(c) Application No.: 13/995,809 Attorney Docket No.: Q₂₀₄₉₄₉ the inorganic compound containing carbon includes one selected from the group consisting of silicon carbide (SiC), boron carbide (B₄C), aluminum carbide (A₁₄C₃), titanium carbide (TiC), zirconium carbide (ZrC), hafnium carbide (HfC), vanadium carbide (VC), niobium carbide (NbC), tantalum carbide (TaC), c h romium carbide (CrC), molybdenum carbide (MoC), tungsten carbide (WC), carbon nitride (C₃N₄), and boron carbon nitride (BCN).
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: A method of manufacturing a graphene substrate, SVG 13995809.09-24-2014.I₀H₈YU₆₄PXXIFW3.CLM.1.svg 0.16 1.57 Black and white (a) bringing a metal layer into contact with a carbon-containing layer and heating the metal layer to dissolve carbon in the carbon-containing layer into the metal layer; and (b) cooling the metal layer to precipitate the carbon in the metal layer as graphene on a surface of a heat-resistant material brought into contact with the metal layer, wherein t h e-s tep-(a) comprises dissolving the carbon in the carbon-containing layer into the metal layer by arranging the carbon-containing layer in a holder, arranging a spacer on the carbon-containing layer, arranging the metal layer in the spacer, arranging a layer of the heat- resistant material on the metal layer, and heating the metal layer.
: A graphene substrate, comprising a substrate and graphene formed on the substrate, said graphene having a D/G ratio of less than 1, wherein said D/G ratio is a ratio between an intensity of D-band and that of G-band obtained by Raman spectroscopy, wherein said substrate comprises a heat resistant material which includes at least one element or compound selected from the group consistin g of an oxide, a nitride, a fluoride, mica, and diamond without any carbide.
1 9.: A semiconductor device, which is manufactured through use of the graphene substrate according to claim 18.
: The graphene substrate according to claim 18, wherein, in the heat resistant material, the oxide includes one selected from the group consisting of quartz (Si O 2), alumina or sapphire (A 1 203), titanium oxide (Ti O 2), zin c oxide (Zn O), magnesium oxide (Mg O), nikkel oxide (Ni O), zirconia (Zr O 2), lithium niobate (LiNb O₃), and lithium tantalate (LiTa O 3), the nitride includes one select from the group consisting of boron nitride (BN), aluminum nitride (A l N), gallium nitride (GaN), carbon nitride (C₃N₄), and b o ron carbon nitride (BCN), and the fluoride includes one selected from the group consisting of barium fluoride (BaF₂), calcium fluoride (CaF₂), and magnesium fluoride (MgF₂).
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: A graphene substrate comprising a substrate and graphene formed on a substrate, the graphene having a D/G ratio of less than 1, wherein the D I G ratio is a ratio between an intensity of D-band and that of G-band obtained by Raman spectroscopy, the substrate comprising a heat resistant material which includes a carbide, wherein the carbide is selected from the group consisting of boron carbide (B₄C), aluminum carbide (A₁₄C₃), titanium carbide (TiC), zirconium carbide (ZrC), hafnium carbide (HfC), vanadium carbide (VC), niobium carbide (NbC), tantalum carbide (TaC), chromium carbide (CrC), molybdenum carbide (MoC), and tungsten carbide (WC).
: A graphene substrate comprising a substrate and graphene formed on a substrate, the graphene having a D/G ratio of less than 1, wherein the D/G ratio is a ratio between an intensity of D-band and that of G-band obtained by Raman spectroscopy, the substrate comprising a heat resistant material which includes one of 4H- silicon carbide (SiC), 6H-silicon carbide (SiC), and wherein each of the 4H silicon carbide and the 6H-silicon carbide acts as a carbon supply source and a graphene growth substrate.
: A semiconductor device, which-i- manufactured SVG 13995809.09-24-2014.I₀H₈YU₆₄PXXIFW3.CLM.2.svg 0.16 7.43 Black and white
: A semiconductor device, which i- manufactured SVG 13995809.09-24-2014.I₀H₈YU₆₄PXXIFW3.CLM.3.svg 0.16 4.98 Black and white
Layer stacks claimed or described, ordered top of device to substrate.
graphene substrate
semiconductor device
graphene substrate with carbide support
Materials described outside the worked examples.
metal layer
carbon-containing layer
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3(a), a layer number control method involving adjusting the amount of carbon through use of a carbon solubility curve is described. Herein, the case of …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
D/G ratio (Raman) of claimed graphene | — | C |
Temperature | 400–600 °C |
Related documents with shared materials, methods, properties, or citations.
SEPARATOR INCLUDING LASER-INDUCED CARBONIZED GRAPHENE LAYER AND LITHIUM-SULFUR BATTERY INCLUDING THE SAME
METHOD FOR PRODUCING GRAPHENE, GRAPHENE PRODUCED ON SUBSTRATE, AND GRAPHENE ON SUBSTRATE
Patent
Atlas literature
Patent
US 8,980,217Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is sectional views each illustrating an overview of a method of manufacturing a graphene substrate according to a first embodiment. 5
FIG. 2. First, as illustrated in
FIG. 3(a), a layer number control method involving adjusting the amount of carbon through use of a carbon solubility curve is described. Herein, the case of …
FIG. 4. The Raman spectra of the obtained graphene 9 were measured, and the quality and the number of layers of graphene were evaluated. A specific procedure …
FIG. 5(e), as illustrated in an enlarged view 21e, 5 only an apex portion (convex portion) of each mountain in a wave-shaped (uneven) structure of the growth …
FIG. 6. Both the transistors were subjected to electrical measurement to evaluate device characteristics. A specific procedure therefor is as follows. 25 First, …
FIG. 7 is a graph showing a relationship between the quality of graphene and a heating condition at the time of manufacturing a graphene substrate according to …
FIG. 8 shows Raman spectra of the graphene 9 on the growth substrates 1 (sapphire substrates) produced through use of the amounts of carbon co rr esponding to …
FIG. 9 shows Raman spectra of the graphene 9 on the graphene substrates 10 produced thr ough use of (a) natural graphite, (b) a single-walled carbon nanotube, …
FIG. 10 shows Raman spectra of the graphene 9 produced on the diamond substrate (a), the 4H- SiC substrate (b), the 6H-SiC substrate (c), the h-BN thin film …
FIG. 11 is a graph showing Raman spectra of graphene in the case of changing the kind of a metal layer at the time of manufacturing a graphene substrate …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
: A method of manufacturing a graphene substrate, comprising the steps of: (a) bringing a metal layer into contact with a carbon-containing layer and heating the metal layer to dissolve carbon in the carbon-containing layer into the metal layer; and (b) cooling the metal layer to precipitate the carbon in the metal layer as graphene on a surface of a heat-resistant material brought into contact with the metal layer to allow the metal layer to become liquid and to dissolve carbon in the carbon-containing layer into the metal layer, wherein the metal layer comprises a metal having a carbon solubility at a ppm level and a relatively low melting point to be liquid in a heating temperature range ofaround4 G between 600 ° C and 1200 * C, and wherein (b) further comprises keeping the metal la ye r at a constant temperature between 400 ° C and 600 °C.
: The method according to claim 1, further comprising step (c) ef- removing the metal layer after t h e-step-(b).
: The method according to claim 1, wherein the metal layer includes at least one selected from the group consisting of gallium (Ga), indium (In), thallium (T l), tin (Sn), aluminum (Al), lead (Pb), bismuth (Bi), zin c (Zn), cadmium (Cd), and mercury (Hg).
: The method according to claim 1, wherein the heat- resistant material comprises at least one element or compound selected from the group consisting of an oxide, a nitride, a carbide, a fluoride, mica, and diamond.
: The method according to claim 1, wherein the heat- resistant material has an uneven shape.
: The method according to claim 1, wherein the carbon-containing layer includes at least one kind selected from the group consisting of a carbon allotrope, a low -molecular organic compound, an artificial high-molecular organic compound, a natural high-molecular organic compound, and an inorganic compound containing carbon.
: The method according to claim 1, wherein: -step-(a) comprises heating at a temperature of 600 * C or more; and the-step- (b) comprises cooling to 400 ° C at a temperature drop per unit time of 1 00°C/min or less to keep the metal layer at the constant temperature between 400 4 C and 600 °C.
: The method according to claim 1, wherein the carbon-containing layer includes one selected from the group consisting of a carbon allotrope, a low -molecular organic compound, an artificial high-molecular organic compound, a natural high-molecular organic compound, and an inorganic compound containing carbon, and wherein the carbon allotrope includes one selected from the group consisting of glassy carbon, crystalline graphite, single-walled and multi-walled carbon nanotubes, fullerene typified by C ho and C 7o, diamond, and nanodiamond, the low-molecular organic compound includes one selected from the group consisting of a metallocene, naphthalene, anthracene, and pentacene, the artificial high-molecular organic compound includes one selected from the group consisting of Teflon (registered trademark), polymethyl methacrylate (PMMA), and polyethylene, the natural high-molecular organic compound includes one selected from the group consisting of a protein, a nucleic acid, a lipid, and a polysaccharide, and 8 AMENDMENT UNDER 37 C.F.R. § 1.114(c) Application No.: 13/995,809 Attorney Docket No.: Q₂₀₄₉₄₉ the inorganic compound containing carbon includes one selected from the group consisting of silicon carbide (SiC), boron carbide (B₄C), aluminum carbide (A₁₄C₃), titanium carbide (TiC), zirconium carbide (ZrC), hafnium carbide (HfC), vanadium carbide (VC), niobium carbide (NbC), tantalum carbide (TaC), c h romium carbide (CrC), molybdenum carbide (MoC), tungsten carbide (WC), carbon nitride (C₃N₄), and boron carbon nitride (BCN).
. canceled
: A method of manufacturing a graphene substrate, SVG 13995809.09-24-2014.I₀H₈YU₆₄PXXIFW3.CLM.1.svg 0.16 1.57 Black and white (a) bringing a metal layer into contact with a carbon-containing layer and heating the metal layer to dissolve carbon in the carbon-containing layer into the metal layer; and (b) cooling the metal layer to precipitate the carbon in the metal layer as graphene on a surface of a heat-resistant material brought into contact with the metal layer, wherein t h e-s tep-(a) comprises dissolving the carbon in the carbon-containing layer into the metal layer by arranging the carbon-containing layer in a holder, arranging a spacer on the carbon-containing layer, arranging the metal layer in the spacer, arranging a layer of the heat- resistant material on the metal layer, and heating the metal layer.
: A graphene substrate, comprising a substrate and graphene formed on the substrate, said graphene having a D/G ratio of less than 1, wherein said D/G ratio is a ratio between an intensity of D-band and that of G-band obtained by Raman spectroscopy, wherein said substrate comprises a heat resistant material which includes at least one element or compound selected from the group consistin g of an oxide, a nitride, a fluoride, mica, and diamond without any carbide.
1 9.: A semiconductor device, which is manufactured through use of the graphene substrate according to claim 18.
: The graphene substrate according to claim 18, wherein, in the heat resistant material, the oxide includes one selected from the group consisting of quartz (Si O 2), alumina or sapphire (A 1 203), titanium oxide (Ti O 2), zin c oxide (Zn O), magnesium oxide (Mg O), nikkel oxide (Ni O), zirconia (Zr O 2), lithium niobate (LiNb O₃), and lithium tantalate (LiTa O 3), the nitride includes one select from the group consisting of boron nitride (BN), aluminum nitride (A l N), gallium nitride (GaN), carbon nitride (C₃N₄), and b o ron carbon nitride (BCN), and the fluoride includes one selected from the group consisting of barium fluoride (BaF₂), calcium fluoride (CaF₂), and magnesium fluoride (MgF₂).
. canceled
. canceled
: A graphene substrate comprising a substrate and graphene formed on a substrate, the graphene having a D/G ratio of less than 1, wherein the D I G ratio is a ratio between an intensity of D-band and that of G-band obtained by Raman spectroscopy, the substrate comprising a heat resistant material which includes a carbide, wherein the carbide is selected from the group consisting of boron carbide (B₄C), aluminum carbide (A₁₄C₃), titanium carbide (TiC), zirconium carbide (ZrC), hafnium carbide (HfC), vanadium carbide (VC), niobium carbide (NbC), tantalum carbide (TaC), chromium carbide (CrC), molybdenum carbide (MoC), and tungsten carbide (WC).
: A graphene substrate comprising a substrate and graphene formed on a substrate, the graphene having a D/G ratio of less than 1, wherein the D/G ratio is a ratio between an intensity of D-band and that of G-band obtained by Raman spectroscopy, the substrate comprising a heat resistant material which includes one of 4H- silicon carbide (SiC), 6H-silicon carbide (SiC), and wherein each of the 4H silicon carbide and the 6H-silicon carbide acts as a carbon supply source and a graphene growth substrate.
: A semiconductor device, which-i- manufactured SVG 13995809.09-24-2014.I₀H₈YU₆₄PXXIFW3.CLM.2.svg 0.16 7.43 Black and white
: A semiconductor device, which i- manufactured SVG 13995809.09-24-2014.I₀H₈YU₆₄PXXIFW3.CLM.3.svg 0.16 4.98 Black and white
Layer stacks claimed or described, ordered top of device to substrate.
graphene substrate
semiconductor device
graphene substrate with carbide support
Materials described outside the worked examples.
metal layer
carbon-containing layer
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3(a), a layer number control method involving adjusting the amount of carbon through use of a carbon solubility curve is described. Herein, the case of …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
D/G ratio (Raman) of claimed graphene | — | C |
Temperature | 400–600 °C |
Related documents with shared materials, methods, properties, or citations.
SEPARATOR INCLUDING LASER-INDUCED CARBONIZED GRAPHENE LAYER AND LITHIUM-SULFUR BATTERY INCLUDING THE SAME
METHOD FOR PRODUCING GRAPHENE, GRAPHENE PRODUCED ON SUBSTRATE, AND GRAPHENE ON SUBSTRATE
Patent
Atlas literature
Patent
US 8,980,217Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is sectional views each illustrating an overview of a method of manufacturing a graphene substrate according to a first embodiment. 5
FIG. 2. First, as illustrated in
FIG. 3(a), a layer number control method involving adjusting the amount of carbon through use of a carbon solubility curve is described. Herein, the case of …
FIG. 4. The Raman spectra of the obtained graphene 9 were measured, and the quality and the number of layers of graphene were evaluated. A specific procedure …
FIG. 5(e), as illustrated in an enlarged view 21e, 5 only an apex portion (convex portion) of each mountain in a wave-shaped (uneven) structure of the growth …
FIG. 6. Both the transistors were subjected to electrical measurement to evaluate device characteristics. A specific procedure therefor is as follows. 25 First, …
FIG. 7 is a graph showing a relationship between the quality of graphene and a heating condition at the time of manufacturing a graphene substrate according to …
FIG. 8 shows Raman spectra of the graphene 9 on the growth substrates 1 (sapphire substrates) produced through use of the amounts of carbon co rr esponding to …
FIG. 9 shows Raman spectra of the graphene 9 on the graphene substrates 10 produced thr ough use of (a) natural graphite, (b) a single-walled carbon nanotube, …
FIG. 10 shows Raman spectra of the graphene 9 produced on the diamond substrate (a), the 4H- SiC substrate (b), the 6H-SiC substrate (c), the h-BN thin film …
FIG. 11 is a graph showing Raman spectra of graphene in the case of changing the kind of a metal layer at the time of manufacturing a graphene substrate …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
: A method of manufacturing a graphene substrate, comprising the steps of: (a) bringing a metal layer into contact with a carbon-containing layer and heating the metal layer to dissolve carbon in the carbon-containing layer into the metal layer; and (b) cooling the metal layer to precipitate the carbon in the metal layer as graphene on a surface of a heat-resistant material brought into contact with the metal layer to allow the metal layer to become liquid and to dissolve carbon in the carbon-containing layer into the metal layer, wherein the metal layer comprises a metal having a carbon solubility at a ppm level and a relatively low melting point to be liquid in a heating temperature range ofaround4 G between 600 ° C and 1200 * C, and wherein (b) further comprises keeping the metal la ye r at a constant temperature between 400 ° C and 600 °C.
: The method according to claim 1, further comprising step (c) ef- removing the metal layer after t h e-step-(b).
: The method according to claim 1, wherein the metal layer includes at least one selected from the group consisting of gallium (Ga), indium (In), thallium (T l), tin (Sn), aluminum (Al), lead (Pb), bismuth (Bi), zin c (Zn), cadmium (Cd), and mercury (Hg).
: The method according to claim 1, wherein the heat- resistant material comprises at least one element or compound selected from the group consisting of an oxide, a nitride, a carbide, a fluoride, mica, and diamond.
: The method according to claim 1, wherein the heat- resistant material has an uneven shape.
: The method according to claim 1, wherein the carbon-containing layer includes at least one kind selected from the group consisting of a carbon allotrope, a low -molecular organic compound, an artificial high-molecular organic compound, a natural high-molecular organic compound, and an inorganic compound containing carbon.
: The method according to claim 1, wherein: -step-(a) comprises heating at a temperature of 600 * C or more; and the-step- (b) comprises cooling to 400 ° C at a temperature drop per unit time of 1 00°C/min or less to keep the metal layer at the constant temperature between 400 4 C and 600 °C.
: The method according to claim 1, wherein the carbon-containing layer includes one selected from the group consisting of a carbon allotrope, a low -molecular organic compound, an artificial high-molecular organic compound, a natural high-molecular organic compound, and an inorganic compound containing carbon, and wherein the carbon allotrope includes one selected from the group consisting of glassy carbon, crystalline graphite, single-walled and multi-walled carbon nanotubes, fullerene typified by C ho and C 7o, diamond, and nanodiamond, the low-molecular organic compound includes one selected from the group consisting of a metallocene, naphthalene, anthracene, and pentacene, the artificial high-molecular organic compound includes one selected from the group consisting of Teflon (registered trademark), polymethyl methacrylate (PMMA), and polyethylene, the natural high-molecular organic compound includes one selected from the group consisting of a protein, a nucleic acid, a lipid, and a polysaccharide, and 8 AMENDMENT UNDER 37 C.F.R. § 1.114(c) Application No.: 13/995,809 Attorney Docket No.: Q₂₀₄₉₄₉ the inorganic compound containing carbon includes one selected from the group consisting of silicon carbide (SiC), boron carbide (B₄C), aluminum carbide (A₁₄C₃), titanium carbide (TiC), zirconium carbide (ZrC), hafnium carbide (HfC), vanadium carbide (VC), niobium carbide (NbC), tantalum carbide (TaC), c h romium carbide (CrC), molybdenum carbide (MoC), tungsten carbide (WC), carbon nitride (C₃N₄), and boron carbon nitride (BCN).
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: A method of manufacturing a graphene substrate, SVG 13995809.09-24-2014.I₀H₈YU₆₄PXXIFW3.CLM.1.svg 0.16 1.57 Black and white (a) bringing a metal layer into contact with a carbon-containing layer and heating the metal layer to dissolve carbon in the carbon-containing layer into the metal layer; and (b) cooling the metal layer to precipitate the carbon in the metal layer as graphene on a surface of a heat-resistant material brought into contact with the metal layer, wherein t h e-s tep-(a) comprises dissolving the carbon in the carbon-containing layer into the metal layer by arranging the carbon-containing layer in a holder, arranging a spacer on the carbon-containing layer, arranging the metal layer in the spacer, arranging a layer of the heat- resistant material on the metal layer, and heating the metal layer.
: A graphene substrate, comprising a substrate and graphene formed on the substrate, said graphene having a D/G ratio of less than 1, wherein said D/G ratio is a ratio between an intensity of D-band and that of G-band obtained by Raman spectroscopy, wherein said substrate comprises a heat resistant material which includes at least one element or compound selected from the group consistin g of an oxide, a nitride, a fluoride, mica, and diamond without any carbide.
1 9.: A semiconductor device, which is manufactured through use of the graphene substrate according to claim 18.
: The graphene substrate according to claim 18, wherein, in the heat resistant material, the oxide includes one selected from the group consisting of quartz (Si O 2), alumina or sapphire (A 1 203), titanium oxide (Ti O 2), zin c oxide (Zn O), magnesium oxide (Mg O), nikkel oxide (Ni O), zirconia (Zr O 2), lithium niobate (LiNb O₃), and lithium tantalate (LiTa O 3), the nitride includes one select from the group consisting of boron nitride (BN), aluminum nitride (A l N), gallium nitride (GaN), carbon nitride (C₃N₄), and b o ron carbon nitride (BCN), and the fluoride includes one selected from the group consisting of barium fluoride (BaF₂), calcium fluoride (CaF₂), and magnesium fluoride (MgF₂).
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: A graphene substrate comprising a substrate and graphene formed on a substrate, the graphene having a D/G ratio of less than 1, wherein the D I G ratio is a ratio between an intensity of D-band and that of G-band obtained by Raman spectroscopy, the substrate comprising a heat resistant material which includes a carbide, wherein the carbide is selected from the group consisting of boron carbide (B₄C), aluminum carbide (A₁₄C₃), titanium carbide (TiC), zirconium carbide (ZrC), hafnium carbide (HfC), vanadium carbide (VC), niobium carbide (NbC), tantalum carbide (TaC), chromium carbide (CrC), molybdenum carbide (MoC), and tungsten carbide (WC).
: A graphene substrate comprising a substrate and graphene formed on a substrate, the graphene having a D/G ratio of less than 1, wherein the D/G ratio is a ratio between an intensity of D-band and that of G-band obtained by Raman spectroscopy, the substrate comprising a heat resistant material which includes one of 4H- silicon carbide (SiC), 6H-silicon carbide (SiC), and wherein each of the 4H silicon carbide and the 6H-silicon carbide acts as a carbon supply source and a graphene growth substrate.
: A semiconductor device, which-i- manufactured SVG 13995809.09-24-2014.I₀H₈YU₆₄PXXIFW3.CLM.2.svg 0.16 7.43 Black and white
: A semiconductor device, which i- manufactured SVG 13995809.09-24-2014.I₀H₈YU₆₄PXXIFW3.CLM.3.svg 0.16 4.98 Black and white
Layer stacks claimed or described, ordered top of device to substrate.
graphene substrate
semiconductor device
graphene substrate with carbide support
Materials described outside the worked examples.
metal layer
carbon-containing layer
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3(a), a layer number control method involving adjusting the amount of carbon through use of a carbon solubility curve is described. Herein, the case of …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
D/G ratio (Raman) of claimed graphene | — | C |
Temperature | 400–600 °C |
Related documents with shared materials, methods, properties, or citations.
SEPARATOR INCLUDING LASER-INDUCED CARBONIZED GRAPHENE LAYER AND LITHIUM-SULFUR BATTERY INCLUDING THE SAME
METHOD FOR PRODUCING GRAPHENE, GRAPHENE PRODUCED ON SUBSTRATE, AND GRAPHENE ON SUBSTRATE
graphene substrate on SiC
heat-resistant material (substrate)
acceptor element
donor element
low-melting-point metal
graphene
C
carbide substrate
silicon carbide
SiC
FIG. 4. The Raman spectra of the obtained graphene 9 were measured, and the quality and the number of layers of graphene were evaluated. A specific procedure …
FIG. 4. The Raman spectra of the obtained graphene 9 were measured, and the quality and the number of layers of graphene were evaluated. A specific procedure …
FIG. 4. The Raman spectra of the obtained graphene 9 were measured, and the quality and the number of layers of graphene were evaluated. A specific procedure …
FIG. 6. Both the transistors were subjected to electrical measurement to evaluate device characteristics. A specific procedure therefor is as follows. 25 First, …
FIG. 6. Both the transistors were subjected to electrical measurement to evaluate device characteristics. A specific procedure therefor is as follows. 25 First, …
FIG. 7 is a graph showing a relationship between the quality of graphene and a heating condition at the time of manufacturing a graphene substrate according to …
FIG. 8 shows Raman spectra of the graphene 9 on the growth substrates 1 (sapphire substrates) produced through use of the amounts of carbon co rr esponding to …
FIG. 8 shows Raman spectra of the graphene 9 on the growth substrates 1 (sapphire substrates) produced through use of the amounts of carbon co rr esponding to …
FIG. 8 shows Raman spectra of the graphene 9 on the growth substrates 1 (sapphire substrates) produced through use of the amounts of carbon co rr esponding to …
FIG. 9 shows Raman spectra of the graphene 9 on the graphene substrates 10 produced thr ough use of (a) natural graphite, (b) a single-walled carbon nanotube, …
FIG. 9 shows Raman spectra of the graphene 9 on the graphene substrates 10 produced thr ough use of (a) natural graphite, (b) a single-walled carbon nanotube, …
FIG. 10 shows Raman spectra of the graphene 9 produced on the diamond substrate (a), the 4H- SiC substrate (b), the 6H-SiC substrate (c), the h-BN thin film …
FIG. 10 shows Raman spectra of the graphene 9 produced on the diamond substrate (a), the 4H- SiC substrate (b), the 6H-SiC substrate (c), the h-BN thin film …
FIG. 11 is a graph showing Raman spectra of graphene in the case of changing the kind of a metal layer at the time of manufacturing a graphene substrate …
FIG. 11 is a graph showing Raman spectra of graphene in the case of changing the kind of a metal layer at the time of manufacturing a graphene substrate …
FIG. 11 is a graph showing Raman spectra of graphene in the case of changing the kind of a metal layer at the time of manufacturing a graphene substrate …
| — |
Temperature | 0.5–100 °C | — |
graphene substrate on SiC
heat-resistant material (substrate)
acceptor element
donor element
low-melting-point metal
graphene
C
carbide substrate
silicon carbide
SiC
FIG. 4. The Raman spectra of the obtained graphene 9 were measured, and the quality and the number of layers of graphene were evaluated. A specific procedure …
FIG. 4. The Raman spectra of the obtained graphene 9 were measured, and the quality and the number of layers of graphene were evaluated. A specific procedure …
FIG. 4. The Raman spectra of the obtained graphene 9 were measured, and the quality and the number of layers of graphene were evaluated. A specific procedure …
FIG. 6. Both the transistors were subjected to electrical measurement to evaluate device characteristics. A specific procedure therefor is as follows. 25 First, …
FIG. 6. Both the transistors were subjected to electrical measurement to evaluate device characteristics. A specific procedure therefor is as follows. 25 First, …
FIG. 7 is a graph showing a relationship between the quality of graphene and a heating condition at the time of manufacturing a graphene substrate according to …
FIG. 8 shows Raman spectra of the graphene 9 on the growth substrates 1 (sapphire substrates) produced through use of the amounts of carbon co rr esponding to …
FIG. 8 shows Raman spectra of the graphene 9 on the growth substrates 1 (sapphire substrates) produced through use of the amounts of carbon co rr esponding to …
FIG. 8 shows Raman spectra of the graphene 9 on the growth substrates 1 (sapphire substrates) produced through use of the amounts of carbon co rr esponding to …
FIG. 9 shows Raman spectra of the graphene 9 on the graphene substrates 10 produced thr ough use of (a) natural graphite, (b) a single-walled carbon nanotube, …
FIG. 9 shows Raman spectra of the graphene 9 on the graphene substrates 10 produced thr ough use of (a) natural graphite, (b) a single-walled carbon nanotube, …
FIG. 10 shows Raman spectra of the graphene 9 produced on the diamond substrate (a), the 4H- SiC substrate (b), the 6H-SiC substrate (c), the h-BN thin film …
FIG. 10 shows Raman spectra of the graphene 9 produced on the diamond substrate (a), the 4H- SiC substrate (b), the 6H-SiC substrate (c), the h-BN thin film …
FIG. 11 is a graph showing Raman spectra of graphene in the case of changing the kind of a metal layer at the time of manufacturing a graphene substrate …
FIG. 11 is a graph showing Raman spectra of graphene in the case of changing the kind of a metal layer at the time of manufacturing a graphene substrate …
FIG. 11 is a graph showing Raman spectra of graphene in the case of changing the kind of a metal layer at the time of manufacturing a graphene substrate …
| — |
Temperature | 0.5–100 °C | — |
graphene substrate on SiC
heat-resistant material (substrate)
acceptor element
donor element
low-melting-point metal
graphene
C
carbide substrate
silicon carbide
SiC
FIG. 4. The Raman spectra of the obtained graphene 9 were measured, and the quality and the number of layers of graphene were evaluated. A specific procedure …
FIG. 4. The Raman spectra of the obtained graphene 9 were measured, and the quality and the number of layers of graphene were evaluated. A specific procedure …
FIG. 4. The Raman spectra of the obtained graphene 9 were measured, and the quality and the number of layers of graphene were evaluated. A specific procedure …
FIG. 6. Both the transistors were subjected to electrical measurement to evaluate device characteristics. A specific procedure therefor is as follows. 25 First, …
FIG. 6. Both the transistors were subjected to electrical measurement to evaluate device characteristics. A specific procedure therefor is as follows. 25 First, …
FIG. 7 is a graph showing a relationship between the quality of graphene and a heating condition at the time of manufacturing a graphene substrate according to …
FIG. 8 shows Raman spectra of the graphene 9 on the growth substrates 1 (sapphire substrates) produced through use of the amounts of carbon co rr esponding to …
FIG. 8 shows Raman spectra of the graphene 9 on the growth substrates 1 (sapphire substrates) produced through use of the amounts of carbon co rr esponding to …
FIG. 8 shows Raman spectra of the graphene 9 on the growth substrates 1 (sapphire substrates) produced through use of the amounts of carbon co rr esponding to …
FIG. 9 shows Raman spectra of the graphene 9 on the graphene substrates 10 produced thr ough use of (a) natural graphite, (b) a single-walled carbon nanotube, …
FIG. 9 shows Raman spectra of the graphene 9 on the graphene substrates 10 produced thr ough use of (a) natural graphite, (b) a single-walled carbon nanotube, …
FIG. 10 shows Raman spectra of the graphene 9 produced on the diamond substrate (a), the 4H- SiC substrate (b), the 6H-SiC substrate (c), the h-BN thin film …
FIG. 10 shows Raman spectra of the graphene 9 produced on the diamond substrate (a), the 4H- SiC substrate (b), the 6H-SiC substrate (c), the h-BN thin film …
FIG. 11 is a graph showing Raman spectra of graphene in the case of changing the kind of a metal layer at the time of manufacturing a graphene substrate …
FIG. 11 is a graph showing Raman spectra of graphene in the case of changing the kind of a metal layer at the time of manufacturing a graphene substrate …
FIG. 11 is a graph showing Raman spectra of graphene in the case of changing the kind of a metal layer at the time of manufacturing a graphene substrate …
| — |
Temperature | 0.5–100 °C | — |
graphene substrate on SiC
heat-resistant material (substrate)
acceptor element
donor element
low-melting-point metal
graphene
C
carbide substrate
silicon carbide
SiC
FIG. 4. The Raman spectra of the obtained graphene 9 were measured, and the quality and the number of layers of graphene were evaluated. A specific procedure …
FIG. 4. The Raman spectra of the obtained graphene 9 were measured, and the quality and the number of layers of graphene were evaluated. A specific procedure …
FIG. 4. The Raman spectra of the obtained graphene 9 were measured, and the quality and the number of layers of graphene were evaluated. A specific procedure …
FIG. 6. Both the transistors were subjected to electrical measurement to evaluate device characteristics. A specific procedure therefor is as follows. 25 First, …
FIG. 6. Both the transistors were subjected to electrical measurement to evaluate device characteristics. A specific procedure therefor is as follows. 25 First, …
FIG. 7 is a graph showing a relationship between the quality of graphene and a heating condition at the time of manufacturing a graphene substrate according to …
FIG. 8 shows Raman spectra of the graphene 9 on the growth substrates 1 (sapphire substrates) produced through use of the amounts of carbon co rr esponding to …
FIG. 8 shows Raman spectra of the graphene 9 on the growth substrates 1 (sapphire substrates) produced through use of the amounts of carbon co rr esponding to …
FIG. 8 shows Raman spectra of the graphene 9 on the growth substrates 1 (sapphire substrates) produced through use of the amounts of carbon co rr esponding to …
FIG. 9 shows Raman spectra of the graphene 9 on the graphene substrates 10 produced thr ough use of (a) natural graphite, (b) a single-walled carbon nanotube, …
FIG. 9 shows Raman spectra of the graphene 9 on the graphene substrates 10 produced thr ough use of (a) natural graphite, (b) a single-walled carbon nanotube, …
FIG. 10 shows Raman spectra of the graphene 9 produced on the diamond substrate (a), the 4H- SiC substrate (b), the 6H-SiC substrate (c), the h-BN thin film …
FIG. 10 shows Raman spectra of the graphene 9 produced on the diamond substrate (a), the 4H- SiC substrate (b), the 6H-SiC substrate (c), the h-BN thin film …
FIG. 11 is a graph showing Raman spectra of graphene in the case of changing the kind of a metal layer at the time of manufacturing a graphene substrate …
FIG. 11 is a graph showing Raman spectra of graphene in the case of changing the kind of a metal layer at the time of manufacturing a graphene substrate …
FIG. 11 is a graph showing Raman spectra of graphene in the case of changing the kind of a metal layer at the time of manufacturing a graphene substrate …
| — |
Temperature | 0.5–100 °C | — |