Patent
US 10,035,708METHOD FOR MANUFACTURING GRAPHENE USING COVER MEMBER AND METHOD FOR MANUFACTURING ELECTRONIC ELEMENT INCLUDING SAME
KILWON CHO
US
Copyright © 2026 Matter42. All rights reserved.
Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a flowchart sequentially illustrating the process of manufacturing a graphene sheet according to an aspect of the 10 present invention;
FIG. 2 schematically illustrates chemical vapor deposition using a substrate having a metal catalytic layer for growing graphene with the use of a cover member …
FIG. 3 illustrates optical microscope images of the graphene layers synthesized in Examples 1 to 6 and Comparative Examples 1 to 6
FIG. 4, and the 20 results of Raman analysis of the graphene layers of Comparative 15 Examples 1 to 6 are shown in
FIG. 5 illustrates the results of Raman analysis of the graphene layers formed in Comparative Examples 1 to 6
FIGS. 6 and 7, when the graphene layer was formed using the cover member according to the present 5 invention, light transmittance was high and sheet …
FIG. 7 illustrates the results of measurement of sheet resistance of the graphene layers manufactured in Examples 1 to 6 and Comparative Examples 1 to 6 5
FIGS. 8 to 11, in Example 1, in which graphene was formed using the cover member, the grain size was large and thus the size of the grain boundary was reduced. …
FIG. 9 is a graph illustrating the results of analysis of grain size of the nickel catalysts using EBSD (Electron Back 10 Scattering Diffraction);
FIG. 10 is a graph illustrating the results of analysis of the nickel catalytic layers based on XRD (X- ray Diffraction); and
FIG. 11 illustrates the crystal orientation of the surfaces 15 of the nickel catalytic layers using EBSD. Mode for Invention Hereinafter, a detailed …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of manufacturing graphene, comprising: (a) forming a metal catalytic layer on a substrate; (b)_ providing a cover member on the metal catalytic layer to form a covered area on a surface of the metal catalytic la y er, wherein the covered area constitutes an area remainin g covered by the cover member; and (c) growing a graphene la y er in the covered area of the metal catalytic layer by performing chemical vapor deposition. Currently amended
The method of claim 1, wherein the cover member is a substrate including at least one selected from the group consisting of an inorganic material, a metal, and a n metal oxide. Currently amended
The method of claim 1, wherein the substrate includes at least one selected from the group consisting of an inorganic material, a metal, and a n metal oxide. Currently amended
The method of claim 1, wherein the metal catalytic layer includes at least one selected from the group consisting of nickel, iron, copper, platinum, palladium, ruthenium, and cobalt. Original
The method of claim 1, wherein the chemical vapor deposition is performed using a mixture comprising hydrogen, argon, methane and ethane. Original
The method of claim 1, further comprising a step: (d) removing the cover member from the substrate and forming a polymer support layer on the graphene la y er, after ste p (c). Currently amended
The method of claim 1, further comprising a step: (d) removing the substrate, the metal catalytic layer and the cover member from the graphene lay e, after ste p (c}. Currently amended
The method of claim 1, wherein the forming the metal catalytic layer is performed using any one process selected from the group consisting of sputtering, thermal evaporation, and e-beam evaporation. Original
The method of claim 1, wherein the metal catalytic layer is formed to a thickness of 10 to 1,000 nm on the substrate. Original
The method of claim 1, wherein the chemical vapor deposition is performed at a temperature of 400 to 1,300 *C. Original
The method of claim 1, wherein the chemical vapor deposition is performed using any one process selected from the group consisting of low-pressure chemical vapor deposition, atmospheric pressure chemical vapor deposition, plasma-enhanced chemical vapor deposition, Joule-heating chemical vapor deposition, and microwave chemical vapor deposition. Original
A method of manufacturing an electronic device, comprising: forming a metal catalytic layer on a substrate (Step 1); providing a cover member on the metal catalytic layer of Step 1 (Step 2); growing graphene on the metal catalytic layer of Step 2 by performing chemical vapor deposition (Step 3); removing the substrate, the metal catalytic layer and the cover member from a product of Step 3, thus obtaining graphene (Step 4); and manufacturing an electronic device including the graphene of Step 4 (Step 5). Withdrawn
The method of claim 15, wherein the electronic device includes any one selected from the group consisting of an electrode, a touch panel, an electroluminescent display, a backlight unit, a radio frequency identification (RFID) tag, a solar cell module, an electronic paper, a thin film transistor (TFT) for a flat panel display, and a TFT array. Withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
electronic device including graphene
Materials described outside the worked examples.
graphene
metal catalytic layer
substrate
inorganic material
metal oxide
silicon
Si
ceramic
quartz
aluminum
Al
tin
Sn
copper
Cu
iron
Fe
nickel
Ni
cobalt
Co
stainless steel
CVD gas mixture (hydrogen, argon, methane, ethane)
polymer support layer
platinum
Pt
palladium
Pd
ruthenium
Ru
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3 illustrates optical microscope images of the graphene layers synthesized in Examples 1 to 6 and Comparative Examples 1 to 6
FIG. 4, and the 20 results of Raman analysis of the graphene layers of Comparative 15 Examples 1 to 6 are shown in
FIG. 5 illustrates the results of Raman analysis of the graphene layers formed in Comparative Examples 1 to 6
FIGS. 6 and 7, when the graphene layer was formed using the cover member according to the present 5 invention, light transmittance was high and sheet …
FIG. 7 illustrates the results of measurement of sheet resistance of the graphene layers manufactured in Examples 1 to 6 and Comparative Examples 1 to 6 5
FIGS. 8 to 11, in Example 1, in which graphene was formed using the cover member, the grain size was large and thus the size of the grain boundary was reduced. …
FIGS. 8 to 11, in Example 1, in which graphene was formed using the cover member, the grain size was large and thus the size of the grain boundary was reduced. …
FIG. 9 is a graph illustrating the results of analysis of grain size of the nickel catalysts using EBSD (Electron Back 10 Scattering Diffraction);
FIG. 10 is a graph illustrating the results of analysis of the nickel catalytic layers based on XRD (X- ray Diffraction); and
FIG. 10 is a graph illustrating the results of analysis of the nickel catalytic layers based on XRD (X- ray Diffraction); and
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 10–1000 nm | — |
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METHOD OF SYNTHESIZING THICKNESS-CONTROLLED GRAPHENE THROUGH CHEMICAL VAPOR DEPOSITION USING CU-NI THIN FILM LAMINATE
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Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a flowchart sequentially illustrating the process of manufacturing a graphene sheet according to an aspect of the 10 present invention;
FIG. 2 schematically illustrates chemical vapor deposition using a substrate having a metal catalytic layer for growing graphene with the use of a cover member …
FIG. 3 illustrates optical microscope images of the graphene layers synthesized in Examples 1 to 6 and Comparative Examples 1 to 6
FIG. 4, and the 20 results of Raman analysis of the graphene layers of Comparative 15 Examples 1 to 6 are shown in
FIG. 5 illustrates the results of Raman analysis of the graphene layers formed in Comparative Examples 1 to 6
FIGS. 6 and 7, when the graphene layer was formed using the cover member according to the present 5 invention, light transmittance was high and sheet …
FIG. 7 illustrates the results of measurement of sheet resistance of the graphene layers manufactured in Examples 1 to 6 and Comparative Examples 1 to 6 5
FIGS. 8 to 11, in Example 1, in which graphene was formed using the cover member, the grain size was large and thus the size of the grain boundary was reduced. …
FIG. 9 is a graph illustrating the results of analysis of grain size of the nickel catalysts using EBSD (Electron Back 10 Scattering Diffraction);
FIG. 10 is a graph illustrating the results of analysis of the nickel catalytic layers based on XRD (X- ray Diffraction); and
FIG. 11 illustrates the crystal orientation of the surfaces 15 of the nickel catalytic layers using EBSD. Mode for Invention Hereinafter, a detailed …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of manufacturing graphene, comprising: (a) forming a metal catalytic layer on a substrate; (b)_ providing a cover member on the metal catalytic layer to form a covered area on a surface of the metal catalytic la y er, wherein the covered area constitutes an area remainin g covered by the cover member; and (c) growing a graphene la y er in the covered area of the metal catalytic layer by performing chemical vapor deposition. Currently amended
The method of claim 1, wherein the cover member is a substrate including at least one selected from the group consisting of an inorganic material, a metal, and a n metal oxide. Currently amended
The method of claim 1, wherein the substrate includes at least one selected from the group consisting of an inorganic material, a metal, and a n metal oxide. Currently amended
The method of claim 1, wherein the metal catalytic layer includes at least one selected from the group consisting of nickel, iron, copper, platinum, palladium, ruthenium, and cobalt. Original
The method of claim 1, wherein the chemical vapor deposition is performed using a mixture comprising hydrogen, argon, methane and ethane. Original
The method of claim 1, further comprising a step: (d) removing the cover member from the substrate and forming a polymer support layer on the graphene la y er, after ste p (c). Currently amended
The method of claim 1, further comprising a step: (d) removing the substrate, the metal catalytic layer and the cover member from the graphene lay e, after ste p (c}. Currently amended
The method of claim 1, wherein the forming the metal catalytic layer is performed using any one process selected from the group consisting of sputtering, thermal evaporation, and e-beam evaporation. Original
The method of claim 1, wherein the metal catalytic layer is formed to a thickness of 10 to 1,000 nm on the substrate. Original
The method of claim 1, wherein the chemical vapor deposition is performed at a temperature of 400 to 1,300 *C. Original
The method of claim 1, wherein the chemical vapor deposition is performed using any one process selected from the group consisting of low-pressure chemical vapor deposition, atmospheric pressure chemical vapor deposition, plasma-enhanced chemical vapor deposition, Joule-heating chemical vapor deposition, and microwave chemical vapor deposition. Original
A method of manufacturing an electronic device, comprising: forming a metal catalytic layer on a substrate (Step 1); providing a cover member on the metal catalytic layer of Step 1 (Step 2); growing graphene on the metal catalytic layer of Step 2 by performing chemical vapor deposition (Step 3); removing the substrate, the metal catalytic layer and the cover member from a product of Step 3, thus obtaining graphene (Step 4); and manufacturing an electronic device including the graphene of Step 4 (Step 5). Withdrawn
The method of claim 15, wherein the electronic device includes any one selected from the group consisting of an electrode, a touch panel, an electroluminescent display, a backlight unit, a radio frequency identification (RFID) tag, a solar cell module, an electronic paper, a thin film transistor (TFT) for a flat panel display, and a TFT array. Withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
electronic device including graphene
Materials described outside the worked examples.
graphene
metal catalytic layer
substrate
inorganic material
metal oxide
silicon
Si
ceramic
quartz
aluminum
Al
tin
Sn
copper
Cu
iron
Fe
nickel
Ni
cobalt
Co
stainless steel
CVD gas mixture (hydrogen, argon, methane, ethane)
polymer support layer
platinum
Pt
palladium
Pd
ruthenium
Ru
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3 illustrates optical microscope images of the graphene layers synthesized in Examples 1 to 6 and Comparative Examples 1 to 6
FIG. 4, and the 20 results of Raman analysis of the graphene layers of Comparative 15 Examples 1 to 6 are shown in
FIG. 5 illustrates the results of Raman analysis of the graphene layers formed in Comparative Examples 1 to 6
FIGS. 6 and 7, when the graphene layer was formed using the cover member according to the present 5 invention, light transmittance was high and sheet …
FIG. 7 illustrates the results of measurement of sheet resistance of the graphene layers manufactured in Examples 1 to 6 and Comparative Examples 1 to 6 5
FIGS. 8 to 11, in Example 1, in which graphene was formed using the cover member, the grain size was large and thus the size of the grain boundary was reduced. …
FIGS. 8 to 11, in Example 1, in which graphene was formed using the cover member, the grain size was large and thus the size of the grain boundary was reduced. …
FIG. 9 is a graph illustrating the results of analysis of grain size of the nickel catalysts using EBSD (Electron Back 10 Scattering Diffraction);
FIG. 10 is a graph illustrating the results of analysis of the nickel catalytic layers based on XRD (X- ray Diffraction); and
FIG. 10 is a graph illustrating the results of analysis of the nickel catalytic layers based on XRD (X- ray Diffraction); and
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 10–1000 nm | — |
Related documents with shared materials, methods, properties, or citations.
METHOD OF SYNTHESIZING THICKNESS-CONTROLLED GRAPHENE THROUGH CHEMICAL VAPOR DEPOSITION USING CU-NI THIN FILM LAMINATE
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Method for Growing High-Quality Graphene Layer
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Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a flowchart sequentially illustrating the process of manufacturing a graphene sheet according to an aspect of the 10 present invention;
FIG. 2 schematically illustrates chemical vapor deposition using a substrate having a metal catalytic layer for growing graphene with the use of a cover member …
FIG. 3 illustrates optical microscope images of the graphene layers synthesized in Examples 1 to 6 and Comparative Examples 1 to 6
FIG. 4, and the 20 results of Raman analysis of the graphene layers of Comparative 15 Examples 1 to 6 are shown in
FIG. 5 illustrates the results of Raman analysis of the graphene layers formed in Comparative Examples 1 to 6
FIGS. 6 and 7, when the graphene layer was formed using the cover member according to the present 5 invention, light transmittance was high and sheet …
FIG. 7 illustrates the results of measurement of sheet resistance of the graphene layers manufactured in Examples 1 to 6 and Comparative Examples 1 to 6 5
FIGS. 8 to 11, in Example 1, in which graphene was formed using the cover member, the grain size was large and thus the size of the grain boundary was reduced. …
FIG. 9 is a graph illustrating the results of analysis of grain size of the nickel catalysts using EBSD (Electron Back 10 Scattering Diffraction);
FIG. 10 is a graph illustrating the results of analysis of the nickel catalytic layers based on XRD (X- ray Diffraction); and
FIG. 11 illustrates the crystal orientation of the surfaces 15 of the nickel catalytic layers using EBSD. Mode for Invention Hereinafter, a detailed …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of manufacturing graphene, comprising: (a) forming a metal catalytic layer on a substrate; (b)_ providing a cover member on the metal catalytic layer to form a covered area on a surface of the metal catalytic la y er, wherein the covered area constitutes an area remainin g covered by the cover member; and (c) growing a graphene la y er in the covered area of the metal catalytic layer by performing chemical vapor deposition. Currently amended
The method of claim 1, wherein the cover member is a substrate including at least one selected from the group consisting of an inorganic material, a metal, and a n metal oxide. Currently amended
The method of claim 1, wherein the substrate includes at least one selected from the group consisting of an inorganic material, a metal, and a n metal oxide. Currently amended
The method of claim 1, wherein the metal catalytic layer includes at least one selected from the group consisting of nickel, iron, copper, platinum, palladium, ruthenium, and cobalt. Original
The method of claim 1, wherein the chemical vapor deposition is performed using a mixture comprising hydrogen, argon, methane and ethane. Original
The method of claim 1, further comprising a step: (d) removing the cover member from the substrate and forming a polymer support layer on the graphene la y er, after ste p (c). Currently amended
The method of claim 1, further comprising a step: (d) removing the substrate, the metal catalytic layer and the cover member from the graphene lay e, after ste p (c}. Currently amended
The method of claim 1, wherein the forming the metal catalytic layer is performed using any one process selected from the group consisting of sputtering, thermal evaporation, and e-beam evaporation. Original
The method of claim 1, wherein the metal catalytic layer is formed to a thickness of 10 to 1,000 nm on the substrate. Original
The method of claim 1, wherein the chemical vapor deposition is performed at a temperature of 400 to 1,300 *C. Original
The method of claim 1, wherein the chemical vapor deposition is performed using any one process selected from the group consisting of low-pressure chemical vapor deposition, atmospheric pressure chemical vapor deposition, plasma-enhanced chemical vapor deposition, Joule-heating chemical vapor deposition, and microwave chemical vapor deposition. Original
A method of manufacturing an electronic device, comprising: forming a metal catalytic layer on a substrate (Step 1); providing a cover member on the metal catalytic layer of Step 1 (Step 2); growing graphene on the metal catalytic layer of Step 2 by performing chemical vapor deposition (Step 3); removing the substrate, the metal catalytic layer and the cover member from a product of Step 3, thus obtaining graphene (Step 4); and manufacturing an electronic device including the graphene of Step 4 (Step 5). Withdrawn
The method of claim 15, wherein the electronic device includes any one selected from the group consisting of an electrode, a touch panel, an electroluminescent display, a backlight unit, a radio frequency identification (RFID) tag, a solar cell module, an electronic paper, a thin film transistor (TFT) for a flat panel display, and a TFT array. Withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
electronic device including graphene
Materials described outside the worked examples.
graphene
metal catalytic layer
substrate
inorganic material
metal oxide
silicon
Si
ceramic
quartz
aluminum
Al
tin
Sn
copper
Cu
iron
Fe
nickel
Ni
cobalt
Co
stainless steel
CVD gas mixture (hydrogen, argon, methane, ethane)
polymer support layer
platinum
Pt
palladium
Pd
ruthenium
Ru
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3 illustrates optical microscope images of the graphene layers synthesized in Examples 1 to 6 and Comparative Examples 1 to 6
FIG. 4, and the 20 results of Raman analysis of the graphene layers of Comparative 15 Examples 1 to 6 are shown in
FIG. 5 illustrates the results of Raman analysis of the graphene layers formed in Comparative Examples 1 to 6
FIGS. 6 and 7, when the graphene layer was formed using the cover member according to the present 5 invention, light transmittance was high and sheet …
FIG. 7 illustrates the results of measurement of sheet resistance of the graphene layers manufactured in Examples 1 to 6 and Comparative Examples 1 to 6 5
FIGS. 8 to 11, in Example 1, in which graphene was formed using the cover member, the grain size was large and thus the size of the grain boundary was reduced. …
FIGS. 8 to 11, in Example 1, in which graphene was formed using the cover member, the grain size was large and thus the size of the grain boundary was reduced. …
FIG. 9 is a graph illustrating the results of analysis of grain size of the nickel catalysts using EBSD (Electron Back 10 Scattering Diffraction);
FIG. 10 is a graph illustrating the results of analysis of the nickel catalytic layers based on XRD (X- ray Diffraction); and
FIG. 10 is a graph illustrating the results of analysis of the nickel catalytic layers based on XRD (X- ray Diffraction); and
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 10–1000 nm | — |
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Method for Growing High-Quality Graphene Layer
GRAPHENE-NANO PARTICLE COMPOSITE HAVING NANOPARTICLES CRYSTALLIZED THEREIN AT A HIGH DENSITY
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Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a flowchart sequentially illustrating the process of manufacturing a graphene sheet according to an aspect of the 10 present invention;
FIG. 2 schematically illustrates chemical vapor deposition using a substrate having a metal catalytic layer for growing graphene with the use of a cover member …
FIG. 3 illustrates optical microscope images of the graphene layers synthesized in Examples 1 to 6 and Comparative Examples 1 to 6
FIG. 4, and the 20 results of Raman analysis of the graphene layers of Comparative 15 Examples 1 to 6 are shown in
FIG. 5 illustrates the results of Raman analysis of the graphene layers formed in Comparative Examples 1 to 6
FIGS. 6 and 7, when the graphene layer was formed using the cover member according to the present 5 invention, light transmittance was high and sheet …
FIG. 7 illustrates the results of measurement of sheet resistance of the graphene layers manufactured in Examples 1 to 6 and Comparative Examples 1 to 6 5
FIGS. 8 to 11, in Example 1, in which graphene was formed using the cover member, the grain size was large and thus the size of the grain boundary was reduced. …
FIG. 9 is a graph illustrating the results of analysis of grain size of the nickel catalysts using EBSD (Electron Back 10 Scattering Diffraction);
FIG. 10 is a graph illustrating the results of analysis of the nickel catalytic layers based on XRD (X- ray Diffraction); and
FIG. 11 illustrates the crystal orientation of the surfaces 15 of the nickel catalytic layers using EBSD. Mode for Invention Hereinafter, a detailed …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of manufacturing graphene, comprising: (a) forming a metal catalytic layer on a substrate; (b)_ providing a cover member on the metal catalytic layer to form a covered area on a surface of the metal catalytic la y er, wherein the covered area constitutes an area remainin g covered by the cover member; and (c) growing a graphene la y er in the covered area of the metal catalytic layer by performing chemical vapor deposition. Currently amended
The method of claim 1, wherein the cover member is a substrate including at least one selected from the group consisting of an inorganic material, a metal, and a n metal oxide. Currently amended
The method of claim 1, wherein the substrate includes at least one selected from the group consisting of an inorganic material, a metal, and a n metal oxide. Currently amended
The method of claim 1, wherein the metal catalytic layer includes at least one selected from the group consisting of nickel, iron, copper, platinum, palladium, ruthenium, and cobalt. Original
The method of claim 1, wherein the chemical vapor deposition is performed using a mixture comprising hydrogen, argon, methane and ethane. Original
The method of claim 1, further comprising a step: (d) removing the cover member from the substrate and forming a polymer support layer on the graphene la y er, after ste p (c). Currently amended
The method of claim 1, further comprising a step: (d) removing the substrate, the metal catalytic layer and the cover member from the graphene lay e, after ste p (c}. Currently amended
The method of claim 1, wherein the forming the metal catalytic layer is performed using any one process selected from the group consisting of sputtering, thermal evaporation, and e-beam evaporation. Original
The method of claim 1, wherein the metal catalytic layer is formed to a thickness of 10 to 1,000 nm on the substrate. Original
The method of claim 1, wherein the chemical vapor deposition is performed at a temperature of 400 to 1,300 *C. Original
The method of claim 1, wherein the chemical vapor deposition is performed using any one process selected from the group consisting of low-pressure chemical vapor deposition, atmospheric pressure chemical vapor deposition, plasma-enhanced chemical vapor deposition, Joule-heating chemical vapor deposition, and microwave chemical vapor deposition. Original
A method of manufacturing an electronic device, comprising: forming a metal catalytic layer on a substrate (Step 1); providing a cover member on the metal catalytic layer of Step 1 (Step 2); growing graphene on the metal catalytic layer of Step 2 by performing chemical vapor deposition (Step 3); removing the substrate, the metal catalytic layer and the cover member from a product of Step 3, thus obtaining graphene (Step 4); and manufacturing an electronic device including the graphene of Step 4 (Step 5). Withdrawn
The method of claim 15, wherein the electronic device includes any one selected from the group consisting of an electrode, a touch panel, an electroluminescent display, a backlight unit, a radio frequency identification (RFID) tag, a solar cell module, an electronic paper, a thin film transistor (TFT) for a flat panel display, and a TFT array. Withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
electronic device including graphene
Materials described outside the worked examples.
graphene
metal catalytic layer
substrate
inorganic material
metal oxide
silicon
Si
ceramic
quartz
aluminum
Al
tin
Sn
copper
Cu
iron
Fe
nickel
Ni
cobalt
Co
stainless steel
CVD gas mixture (hydrogen, argon, methane, ethane)
polymer support layer
platinum
Pt
palladium
Pd
ruthenium
Ru
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3 illustrates optical microscope images of the graphene layers synthesized in Examples 1 to 6 and Comparative Examples 1 to 6
FIG. 4, and the 20 results of Raman analysis of the graphene layers of Comparative 15 Examples 1 to 6 are shown in
FIG. 5 illustrates the results of Raman analysis of the graphene layers formed in Comparative Examples 1 to 6
FIGS. 6 and 7, when the graphene layer was formed using the cover member according to the present 5 invention, light transmittance was high and sheet …
FIG. 7 illustrates the results of measurement of sheet resistance of the graphene layers manufactured in Examples 1 to 6 and Comparative Examples 1 to 6 5
FIGS. 8 to 11, in Example 1, in which graphene was formed using the cover member, the grain size was large and thus the size of the grain boundary was reduced. …
FIGS. 8 to 11, in Example 1, in which graphene was formed using the cover member, the grain size was large and thus the size of the grain boundary was reduced. …
FIG. 9 is a graph illustrating the results of analysis of grain size of the nickel catalysts using EBSD (Electron Back 10 Scattering Diffraction);
FIG. 10 is a graph illustrating the results of analysis of the nickel catalytic layers based on XRD (X- ray Diffraction); and
FIG. 10 is a graph illustrating the results of analysis of the nickel catalytic layers based on XRD (X- ray Diffraction); and
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 10–1000 nm | — |
Related documents with shared materials, methods, properties, or citations.
METHOD OF SYNTHESIZING THICKNESS-CONTROLLED GRAPHENE THROUGH CHEMICAL VAPOR DEPOSITION USING CU-NI THIN FILM LAMINATE
METHOD OF MANUFACTURING GRAPHENE USING METAL CATALYST
Method for Growing High-Quality Graphene Layer
GRAPHENE-NANO PARTICLE COMPOSITE HAVING NANOPARTICLES CRYSTALLIZED THEREIN AT A HIGH DENSITY
Methods of fabricating graphene using alloy catalyst
GRAPHENE-BASED LAMINATE AND METHOD OF PREPARING THE SAME
3D REDUCED GRAPHENE OXIDE FOAMS EMBEDDED WITH NANOCATALYSTS, SYNTHESIZING METHODS AND APPLICATIONS OF SAME
METHOD OF FABRICATING HEXAGONAL BORON NITRIDE
HEXAGONAL BORON NITRIDE SHEET, METHOD OF PREPARING THE HEXAGONAL BORON NITRIDE SHEET, AND ELECTRONIC DEVICE INCLUDING THE HEXAGONAL BORON NITRIDE SHEET
CHEMICAL VAPOR DEPOSITION GROWTH OF HEXAGONAL BORON NITRIDE FILMS AND NANOSTRUCTURES