Patent
US 9,643,850METHOD AND APPARATUS FOR RESTORING PROPERTIES OF GRAPHENE
Jae-young CHOI
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,643,850Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a view illustrating an apparatus for restoring properties of graphene according to example embodiments; [0018]
FIG. 2 is a view illustrating an operation of the apparatus shown in
FIGS. 3A through 3 C are views illustrating a process of restoring properties of graphene by treating contaminated graphene; [0020]
FIG. 4 is a graphical view illustrating an example of a density of plasma ions and a temperature of electrons in the apparatus for restoring properties of …
FIGS. 5[A]-5 [E] are views of an AFM image showing a change of a graphene surface state due to plasma treatment; [0022]
FIGS. 6 and 7 are graphical views illustrating changes of a graphene surface state corresponding to A, B, C, D, and E in
FIG. 7 is a graphical view illustrating changes of RMS roughness and thickness of graphene surfaces corresponding to A, B, C, D, and E in
FIG. 8A is a graphical view of Raman spectrum graph of graphene according to setting of plasma treatment; [0024]
FIG. 9 is a view illustrating G-FET which is an example of a graphene device; [0026]
FIGS. 10 through 13 are graphical views illustrating current-voltage characteristics of G- FET after treatment of G-FET of
FIG. 11, it can be seen that a curve of Id-Vg changes after ICP treatment when the power supplied to the IC P electrode 130 is about 5 W. Vdirac, which is the …
FIG. 12, when the IC P treatment continues from about 162 seconds to about 486 seconds point, Vdirac is shifted from about 8 V to-about 37 V. Temporary …
FIG. 13, when the electric measurement is repeated when the IC P treatment has been performed for 486s, the graphene 39 is restored to a neutral state. That …
FIG. 14 shows an apparatus 200 for restoring properties of graphene according to example embodiments.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of restoring properties of graphene, the method comprising: grounding the graphene; and exposing the graphene to plasma having a density in a range from about 0.3* 108 cm- 3 to about 30* 108 cm- 3.
The method of claim 1, wherein the density is an ion density, and exposing the graphene includes exposing the graphene to the plasma having the ion density in a range from about 1.0* 108 cm- 3 to about 10* 108 cm- 3.
The method of claim 1, wherein the plasma is an inductively coupled plasma (ICP), and the exposing the graphene further comprises: adjusting power input to an ICP electrode in order to control the density of the IC P; and exposing the graphene to the ICP.
The method of claim 1, wherein the plasma is a pulse plasma, and the exposing the graphene further comprises: adjusting a pulse frequency and a duty cycle of power input to a counter electrode in order to control the density of the pulse plasma; and exposing the graphene to the pulse plasma.
The method of claim 1, wherein the exposing the graphene includes generating the plasma using an inert gas.
The method of claim 1, wherein the exposing the graphene includes exposing the graphene having properties including at least one of a charge neutrality point, a doping state, carriers, and conductivity.
7-12.. *** END CLAIM LISTING *** Page 2 canceled
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canceled
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Layer stacks claimed or described, ordered top of device to substrate.
apparatus for restoring properties of graphene
Materials described outside the worked examples.
graphene
inert gas (argon, xenon, or neon)
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 5[A]-5 [E] are views of an AFM image showing a change of a graphene surface state due to plasma treatment; [0022]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
— | 1–5 eV | — |
Voltage |
Table 1
10 Atty. Dkt. No. 2557 S₁ -001898/US SVG
Table 1 shows the carrier mobility.
p. 8
Related documents with shared materials, methods, properties, or citations.
PASSIVE LAYER FOR ATTENUATION OF NEAR-FIELD ELECTROMAGNETIC WAVES AND HEATDISSIPATION INCLUDING GRAPHENE, AND ELECTROMAGNETIC DEVICE INCLUDING THE SAME
SEMICONDUCTOR DEVICE CONTAINING GRAPHENE P-N JUNCTIONS AND METHOD FOR PRODUCING SAME
Patent
Atlas literature
Patent
US 9,643,850Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a view illustrating an apparatus for restoring properties of graphene according to example embodiments; [0018]
FIG. 2 is a view illustrating an operation of the apparatus shown in
FIGS. 3A through 3 C are views illustrating a process of restoring properties of graphene by treating contaminated graphene; [0020]
FIG. 4 is a graphical view illustrating an example of a density of plasma ions and a temperature of electrons in the apparatus for restoring properties of …
FIGS. 5[A]-5 [E] are views of an AFM image showing a change of a graphene surface state due to plasma treatment; [0022]
FIGS. 6 and 7 are graphical views illustrating changes of a graphene surface state corresponding to A, B, C, D, and E in
FIG. 7 is a graphical view illustrating changes of RMS roughness and thickness of graphene surfaces corresponding to A, B, C, D, and E in
FIG. 8A is a graphical view of Raman spectrum graph of graphene according to setting of plasma treatment; [0024]
FIG. 9 is a view illustrating G-FET which is an example of a graphene device; [0026]
FIGS. 10 through 13 are graphical views illustrating current-voltage characteristics of G- FET after treatment of G-FET of
FIG. 11, it can be seen that a curve of Id-Vg changes after ICP treatment when the power supplied to the IC P electrode 130 is about 5 W. Vdirac, which is the …
FIG. 12, when the IC P treatment continues from about 162 seconds to about 486 seconds point, Vdirac is shifted from about 8 V to-about 37 V. Temporary …
FIG. 13, when the electric measurement is repeated when the IC P treatment has been performed for 486s, the graphene 39 is restored to a neutral state. That …
FIG. 14 shows an apparatus 200 for restoring properties of graphene according to example embodiments.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of restoring properties of graphene, the method comprising: grounding the graphene; and exposing the graphene to plasma having a density in a range from about 0.3* 108 cm- 3 to about 30* 108 cm- 3.
The method of claim 1, wherein the density is an ion density, and exposing the graphene includes exposing the graphene to the plasma having the ion density in a range from about 1.0* 108 cm- 3 to about 10* 108 cm- 3.
The method of claim 1, wherein the plasma is an inductively coupled plasma (ICP), and the exposing the graphene further comprises: adjusting power input to an ICP electrode in order to control the density of the IC P; and exposing the graphene to the ICP.
The method of claim 1, wherein the plasma is a pulse plasma, and the exposing the graphene further comprises: adjusting a pulse frequency and a duty cycle of power input to a counter electrode in order to control the density of the pulse plasma; and exposing the graphene to the pulse plasma.
The method of claim 1, wherein the exposing the graphene includes generating the plasma using an inert gas.
The method of claim 1, wherein the exposing the graphene includes exposing the graphene having properties including at least one of a charge neutrality point, a doping state, carriers, and conductivity.
7-12.. *** END CLAIM LISTING *** Page 2 canceled
canceled
canceled
canceled
canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
apparatus for restoring properties of graphene
Materials described outside the worked examples.
graphene
inert gas (argon, xenon, or neon)
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 5[A]-5 [E] are views of an AFM image showing a change of a graphene surface state due to plasma treatment; [0022]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
— | 1–5 eV | — |
Voltage |
Table 1
10 Atty. Dkt. No. 2557 S₁ -001898/US SVG
Table 1 shows the carrier mobility.
p. 8
Related documents with shared materials, methods, properties, or citations.
PASSIVE LAYER FOR ATTENUATION OF NEAR-FIELD ELECTROMAGNETIC WAVES AND HEATDISSIPATION INCLUDING GRAPHENE, AND ELECTROMAGNETIC DEVICE INCLUDING THE SAME
SEMICONDUCTOR DEVICE CONTAINING GRAPHENE P-N JUNCTIONS AND METHOD FOR PRODUCING SAME
Patent
Atlas literature
Patent
US 9,643,850Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a view illustrating an apparatus for restoring properties of graphene according to example embodiments; [0018]
FIG. 2 is a view illustrating an operation of the apparatus shown in
FIGS. 3A through 3 C are views illustrating a process of restoring properties of graphene by treating contaminated graphene; [0020]
FIG. 4 is a graphical view illustrating an example of a density of plasma ions and a temperature of electrons in the apparatus for restoring properties of …
FIGS. 5[A]-5 [E] are views of an AFM image showing a change of a graphene surface state due to plasma treatment; [0022]
FIGS. 6 and 7 are graphical views illustrating changes of a graphene surface state corresponding to A, B, C, D, and E in
FIG. 7 is a graphical view illustrating changes of RMS roughness and thickness of graphene surfaces corresponding to A, B, C, D, and E in
FIG. 8A is a graphical view of Raman spectrum graph of graphene according to setting of plasma treatment; [0024]
FIG. 9 is a view illustrating G-FET which is an example of a graphene device; [0026]
FIGS. 10 through 13 are graphical views illustrating current-voltage characteristics of G- FET after treatment of G-FET of
FIG. 11, it can be seen that a curve of Id-Vg changes after ICP treatment when the power supplied to the IC P electrode 130 is about 5 W. Vdirac, which is the …
FIG. 12, when the IC P treatment continues from about 162 seconds to about 486 seconds point, Vdirac is shifted from about 8 V to-about 37 V. Temporary …
FIG. 13, when the electric measurement is repeated when the IC P treatment has been performed for 486s, the graphene 39 is restored to a neutral state. That …
FIG. 14 shows an apparatus 200 for restoring properties of graphene according to example embodiments.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of restoring properties of graphene, the method comprising: grounding the graphene; and exposing the graphene to plasma having a density in a range from about 0.3* 108 cm- 3 to about 30* 108 cm- 3.
The method of claim 1, wherein the density is an ion density, and exposing the graphene includes exposing the graphene to the plasma having the ion density in a range from about 1.0* 108 cm- 3 to about 10* 108 cm- 3.
The method of claim 1, wherein the plasma is an inductively coupled plasma (ICP), and the exposing the graphene further comprises: adjusting power input to an ICP electrode in order to control the density of the IC P; and exposing the graphene to the ICP.
The method of claim 1, wherein the plasma is a pulse plasma, and the exposing the graphene further comprises: adjusting a pulse frequency and a duty cycle of power input to a counter electrode in order to control the density of the pulse plasma; and exposing the graphene to the pulse plasma.
The method of claim 1, wherein the exposing the graphene includes generating the plasma using an inert gas.
The method of claim 1, wherein the exposing the graphene includes exposing the graphene having properties including at least one of a charge neutrality point, a doping state, carriers, and conductivity.
7-12.. *** END CLAIM LISTING *** Page 2 canceled
canceled
canceled
canceled
canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
apparatus for restoring properties of graphene
Materials described outside the worked examples.
graphene
inert gas (argon, xenon, or neon)
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 5[A]-5 [E] are views of an AFM image showing a change of a graphene surface state due to plasma treatment; [0022]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
— | 1–5 eV | — |
Voltage |
Table 1
10 Atty. Dkt. No. 2557 S₁ -001898/US SVG
Table 1 shows the carrier mobility.
p. 8
Related documents with shared materials, methods, properties, or citations.
PASSIVE LAYER FOR ATTENUATION OF NEAR-FIELD ELECTROMAGNETIC WAVES AND HEATDISSIPATION INCLUDING GRAPHENE, AND ELECTROMAGNETIC DEVICE INCLUDING THE SAME
SEMICONDUCTOR DEVICE CONTAINING GRAPHENE P-N JUNCTIONS AND METHOD FOR PRODUCING SAME
Patent
Atlas literature
Patent
US 9,643,850Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a view illustrating an apparatus for restoring properties of graphene according to example embodiments; [0018]
FIG. 2 is a view illustrating an operation of the apparatus shown in
FIGS. 3A through 3 C are views illustrating a process of restoring properties of graphene by treating contaminated graphene; [0020]
FIG. 4 is a graphical view illustrating an example of a density of plasma ions and a temperature of electrons in the apparatus for restoring properties of …
FIGS. 5[A]-5 [E] are views of an AFM image showing a change of a graphene surface state due to plasma treatment; [0022]
FIGS. 6 and 7 are graphical views illustrating changes of a graphene surface state corresponding to A, B, C, D, and E in
FIG. 7 is a graphical view illustrating changes of RMS roughness and thickness of graphene surfaces corresponding to A, B, C, D, and E in
FIG. 8A is a graphical view of Raman spectrum graph of graphene according to setting of plasma treatment; [0024]
FIG. 9 is a view illustrating G-FET which is an example of a graphene device; [0026]
FIGS. 10 through 13 are graphical views illustrating current-voltage characteristics of G- FET after treatment of G-FET of
FIG. 11, it can be seen that a curve of Id-Vg changes after ICP treatment when the power supplied to the IC P electrode 130 is about 5 W. Vdirac, which is the …
FIG. 12, when the IC P treatment continues from about 162 seconds to about 486 seconds point, Vdirac is shifted from about 8 V to-about 37 V. Temporary …
FIG. 13, when the electric measurement is repeated when the IC P treatment has been performed for 486s, the graphene 39 is restored to a neutral state. That …
FIG. 14 shows an apparatus 200 for restoring properties of graphene according to example embodiments.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of restoring properties of graphene, the method comprising: grounding the graphene; and exposing the graphene to plasma having a density in a range from about 0.3* 108 cm- 3 to about 30* 108 cm- 3.
The method of claim 1, wherein the density is an ion density, and exposing the graphene includes exposing the graphene to the plasma having the ion density in a range from about 1.0* 108 cm- 3 to about 10* 108 cm- 3.
The method of claim 1, wherein the plasma is an inductively coupled plasma (ICP), and the exposing the graphene further comprises: adjusting power input to an ICP electrode in order to control the density of the IC P; and exposing the graphene to the ICP.
The method of claim 1, wherein the plasma is a pulse plasma, and the exposing the graphene further comprises: adjusting a pulse frequency and a duty cycle of power input to a counter electrode in order to control the density of the pulse plasma; and exposing the graphene to the pulse plasma.
The method of claim 1, wherein the exposing the graphene includes generating the plasma using an inert gas.
The method of claim 1, wherein the exposing the graphene includes exposing the graphene having properties including at least one of a charge neutrality point, a doping state, carriers, and conductivity.
7-12.. *** END CLAIM LISTING *** Page 2 canceled
canceled
canceled
canceled
canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
apparatus for restoring properties of graphene
Materials described outside the worked examples.
graphene
inert gas (argon, xenon, or neon)
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 5[A]-5 [E] are views of an AFM image showing a change of a graphene surface state due to plasma treatment; [0022]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
— | 1–5 eV | — |
Voltage |
Table 1
10 Atty. Dkt. No. 2557 S₁ -001898/US SVG
Table 1 shows the carrier mobility.
p. 8
Related documents with shared materials, methods, properties, or citations.
PASSIVE LAYER FOR ATTENUATION OF NEAR-FIELD ELECTROMAGNETIC WAVES AND HEATDISSIPATION INCLUDING GRAPHENE, AND ELECTROMAGNETIC DEVICE INCLUDING THE SAME
SEMICONDUCTOR DEVICE CONTAINING GRAPHENE P-N JUNCTIONS AND METHOD FOR PRODUCING SAME
FIG. 7 is a graphical view illustrating changes of RMS roughness and thickness of graphene surfaces corresponding to A, B, C, D, and E in
FIG. 8A is a graphical view of Raman spectrum graph of graphene according to setting of plasma treatment; [0024]
FIG. 8A is a graphical view of Raman spectrum graph of graphene according to setting of plasma treatment; [0024]
FIG. 9 is a view illustrating G-FET which is an example of a graphene device; [0026]
FIGS. 10 through 13 are graphical views illustrating current-voltage characteristics of G- FET after treatment of G-FET of
FIG. 12, when the IC P treatment continues from about 162 seconds to about 486 seconds point, Vdirac is shifted from about 8 V to-about 37 V. Temporary …
| — |
Duration | 0–162 seconds | — |
Duration | 162–486 seconds | — |
FIG. 7 is a graphical view illustrating changes of RMS roughness and thickness of graphene surfaces corresponding to A, B, C, D, and E in
FIG. 8A is a graphical view of Raman spectrum graph of graphene according to setting of plasma treatment; [0024]
FIG. 8A is a graphical view of Raman spectrum graph of graphene according to setting of plasma treatment; [0024]
FIG. 9 is a view illustrating G-FET which is an example of a graphene device; [0026]
FIGS. 10 through 13 are graphical views illustrating current-voltage characteristics of G- FET after treatment of G-FET of
FIG. 12, when the IC P treatment continues from about 162 seconds to about 486 seconds point, Vdirac is shifted from about 8 V to-about 37 V. Temporary …
| — |
Duration | 0–162 seconds | — |
Duration | 162–486 seconds | — |
FIG. 7 is a graphical view illustrating changes of RMS roughness and thickness of graphene surfaces corresponding to A, B, C, D, and E in
FIG. 8A is a graphical view of Raman spectrum graph of graphene according to setting of plasma treatment; [0024]
FIG. 8A is a graphical view of Raman spectrum graph of graphene according to setting of plasma treatment; [0024]
FIG. 9 is a view illustrating G-FET which is an example of a graphene device; [0026]
FIGS. 10 through 13 are graphical views illustrating current-voltage characteristics of G- FET after treatment of G-FET of
FIG. 12, when the IC P treatment continues from about 162 seconds to about 486 seconds point, Vdirac is shifted from about 8 V to-about 37 V. Temporary …
| — |
Duration | 0–162 seconds | — |
Duration | 162–486 seconds | — |
FIG. 7 is a graphical view illustrating changes of RMS roughness and thickness of graphene surfaces corresponding to A, B, C, D, and E in
FIG. 8A is a graphical view of Raman spectrum graph of graphene according to setting of plasma treatment; [0024]
FIG. 8A is a graphical view of Raman spectrum graph of graphene according to setting of plasma treatment; [0024]
FIG. 9 is a view illustrating G-FET which is an example of a graphene device; [0026]
FIGS. 10 through 13 are graphical views illustrating current-voltage characteristics of G- FET after treatment of G-FET of
FIG. 12, when the IC P treatment continues from about 162 seconds to about 486 seconds point, Vdirac is shifted from about 8 V to-about 37 V. Temporary …
| — |
Duration | 0–162 seconds | — |
Duration | 162–486 seconds | — |