LAYER ARRANGEMENT AND METHOD FOR FABRICATING THEREOF

Guozhen Liang

Patent

Atlas literature

Patent

US 9,819,145

LAYER ARRANGEMENT AND METHOD FOR FABRICATING THEREOF

Guozhen Liang

Drawings

Patent drawings and their descriptions. Click a drawing to enlarge it.

FIG. 1

FIG. 1 B shows a conceptual diagram of a layer arrangement according to various embodiments. 2 [0010]

FIG. 2

process chamber schematic

FIG. 2B shows cross-sectional schematic views of a ﬁrst layer arrangement and a second layer arrangement, according to various embodiments. [0012]

FIG. 3

FIG. 3 shows a three-dimensional (3D) schematic illustration of a layer arrangement according to various embodiments. [0013]

FIG. 4

FIG. 4A shows an optical microscope image showing a central part of the layer arrangement of

FIG. 5

performance graph

FIG. 5 shows a graph showing light-current-voltage (L IV) characteristics of a CCG QCL according to various embodiments. [0016]

FIG. 6

performance graph

FIG. 6 shows a graph showing laser spectra at three diﬀerent currents at a heat sink temperature of 20 K. [0017]

FIG. 7

FIG. 7 shows a schematic structure of a standalone graphene modulator used to characterize a graphene layer according to various embodiments. [0018]

FIG. 8

performance graph

FIG. 8 shows a graph showing the DC conductivity, carrier density and Fermi level of the standalone graphene modulator of

FIG. 9

performance graph

FIG. 9 shows a graph showing the gate voltage dependence of the modulation of the THz wave at temperature of 78K, for the standalone graphene modulator of

FIG. 10

performance graph

FIG. 10 A shows a graph showing a cross- sectional view of a calculated electric ﬁeld distribution of a CCG QCL. [0021] FIG. lO B shows a graph showing an …

FIG. 11

performance graph

FIG. 11 shows a graph showing enhanced modulation of the THz wave by an integrated graphene modulator according to various embodiments. The intensity of the …

FIG. 12

performance graph

FIG. 12 shows a graph showing the dependence of an output power of the CCG QCL on VG for an integrated graphene modulator according to various embodiments. …

FIG. 13

performance graph

FIG. 13 shows a graph showing light- current characteristics of the QCL with various VG level s, for an integrated graphene modulator according to various …

FIG. 14

performance graph

FIG. 14B shows a graph showing the predicted power output of the integrated graphene modulator plotted against time when the integrated graphene modulator is …

FIG. 15

performance graph

FIG. 15 shows a graph showing an average peak power output as a function of modulation frequency. [0029]

FIG. 16

performance graph

FIG. 16 shows a graph showing a frequency response of an integrated graphene modulator according to various embodiments. [0030]

FIG. 17

performance graph

FIG. 17 shows a graph showing a measured two-dimensional far-ﬁeld emission pattern of a surface-emitting CCG QCL according to various embodiments. [0031]

FIG. 18

performance graph

FIG. 18 shows a graph showing a top view of the calculated optical mode in the surfacing-emitting CCG QCL corresponding to the far-ﬁeld emission pattern in

FIG. 19

performance graph

FIG. 19 shows a graph showing the cross-sectional view of the optical mode in the CCG QCL. [0033]

FIG. 20

performance graph

FIG. 20 shows a graph showing the Raman spectrum of the standalone graphene modulator used for the individual characterization of the graphene layer according …

FIG. 21

performance graph

FIG. 21 shows a graph showing the Raman spectrum of the graphene layer of the integrated graphene modulator according to various embodiments. [0035]

FIG. 22

performance graph

FIG. 22 shows a graph showing the square resistance of the CVD graphene transistor as a function of the gate voltage. [0036]

FIG. 23

performance graph

FIG. 23 shows a graph showing the calculated transmittance normalized to the value at the Dirac point and the electrical transport measurements of the graphene …

FIG. 24

performance graph

FIG. 24 shows a graph showing the modulation depth in response to gate voltage, for two diﬀerent temperatures. [0038]

FIG. 25

FIG. 25 shows a schematic diagram of the modulation scheme of an integrated graphene modulator according to various embodiments. 4 [0039]

FIG. 26

performance graph

FIG. 26 shows principal components that aﬀect the high speed performance of the integrated graphene modulator of

FIG. 27

FIG. 27 shows a sequential diagram showing the derivation of an equivalent circuit model for a single slit of an integrated graphene modulator according to …

FIG. 28

FIG. 28 shows an equivalent circuit which models an entire integrated graphene modulator according to various embodiments. [0042]

FIG. 29

FIG. 29 shows a circuit model which is the simpliﬁed equivalent of the equivalent circuit of

FIG. 30

performance graph

FIG. 30 shows a graph showing the dynamic response of the integrated graphene modulator and the electrical modulation applied to the graphene layer according …

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

2 independent · 20 dependent

1
Independentgrapheneintegrated graphene THz modulator layer arrangement
A layer arrangement comprising: a graphene layer; a gating electrode layer conﬁgured to provide a tuning voltage to the graphene layer; a laser layer conﬁgured to provide an electromagnetic wave, the laser layer comprising an active region, the active region being un-etched; and a concentric-circular grating layer conﬁgured to couple the electromagnetic wave to the graphene layer, the concentric-circular grating layer comprising a plurality of concentric rings, wherein innermost rings of the plurality of concentric rings are electrically connected together, and outer rings of the plurality of concentric rings are electrically unconnected to the innermost rings, wherein the innermost rings are conﬁgured to electrically pump the active region. Previously presented
1. 2
  Dependent← claim 1grapheneintegrated graphene THz modulator layer arrangement
  The layer arrangement of claim 1, wherein the graphene layer is provided above the gating electrode layer. Original
2. 6
  Dependent← claim 1integrated graphene THz modulator layer arrangement
  The layer arrangement of claim 1, wherein the concentric- circular grating layer is provided above the laser layer. Original
3. 7
  Dependent← claim 1integrated graphene THz modulator layer arrangement
  The layer arrangement of claim 1, wherein the laser layer comprises a quantum cascade laser. Previously presented
4. 8
  Dependent← claim 1integrated graphene THz modulator layer arrangement
  The layer arrangement of claim 1, wherein the active region is at least substantially ﬂat. Previously presented
5. 9
  Dependent← claim 1integrated graphene THz modulator layer arrangement
  The layer arrangement of claim 1, wherein the concentric-circular grating layer comprises at least one spoke bridge. Previously presented
6. 13
  Dependent← claim 1integrated graphene THz modulator layer arrangement
  14. The layer arrangement of claim 1, wherein the concentric- circular grating layer provides a laser cavity. Original
7. 15
  Dependent← claim 1grapheneintegrated graphene THz modulator layer arrangement
  The layer arrangement of claim 1, wherein the graphene layer is conﬁgured to modulate the electromagnetic wave based on the tuning voltage. Original
8. 16
  Dependent← claim 1integrated graphene THz modulator layer arrangement
  The layer arrangement of claim 1, wherein a frequency of the electromagnetic wave is at least substantially in a range of terahertz. Original
9. 21
  Dependent← claim 1integrated graphene THz modulator layer arrangement
  The layer arrangement of claim 1, further comprising: a bias electrode within the concentric-circular grating layer, wherein the tuning voltage is applied between the bias electrode and the gating electrode layer. Previously presented
10. 23
  Dependent← claim 1integrated graphene THz modulator layer arrangement
  The layer arrangement of claim 1, wherein an electric ﬁeld of the electromagnetic wave is conﬁned to an area electrically pumped by the innermost rings. Currently amended
17
Independentgrapheneintegrated graphene THz modulator layer arrangement
A method for fabricating a layer arrangement, the method comprising: providing a graphene layer; providing a gating electrode layer conﬁgured to provide a tuning voltage to the graphene layer; providing a laser layer conﬁgured to provide an electromagnetic wave, the laser layer comprising an active region, the active region being un-etched; and providing a concentric-circular grating layer conﬁgured to couple the electromagnetic wave to the graphene layer, the concentric-circular grating layer comprising a plurality of concentric rings, wherein innermost rings of the plurality of concentric rings are electrically connected together, outer rings of the plurality of concentric rings are electrically unconnected to the innermost rings, and the innermost rings are conﬁgured to electrically pump the active region. Previously presented
1. 18
  Dependent← claim 17graphene
  The method of claim 17, wherein providing the graphene layer comprises spin-coating a graphene sheet with a ﬁlm. Original
2. 19
  Dependent← claim 17
  The method of claim 17, wherein providing the laser layer comprises removal of an absorptive contact layer of the active region. Previously presented
3. 20
  Dependent← claim 17
  The method of claim 17, wherein providing the concentric- circular grating layer comprises etching of a plurality of metal gratings. Original

Device structures

Layer stacks claimed or described, ordered top of device to substrate.

integrated graphene THz modulator layer arrangement

graphenegraphene modulator

gating electrode / back gategating electrode / back gate

insulator (optional)insulator (optional)

concentric-circular grating (CCG) / electromagnetic coupler and laser cavityconcentric-circular grating (CCG) / electromagnetic coupler and laser cavity

laser / electromagnetic wave sourcelaser / electromagnetic wave source

Materials

Materials described outside the worked examples.

graphene

Electromagnetic Wave Modulator/Tunable Absorber Layer

Process steps

Additional fabrication and treatment steps described in the patent.

Spin Coating

Step 1

Process details

description:spin-coating a graphene sheet with a film

Materials:graphene

Characterization

Measurements and analyses referenced in the patent, with their drawing references.

fet electrical

Fet Electrical

FIG. 5 shows a graph showing light-current-voltage (L IV) characteristics of a CCG QCL according to various embodiments. [0016]

Figure references

FIG. 5

device performance measurement

Reported properties

Performance values and ranges asserted in the specification or claims.

Property	Value	Material
Voltage	40–60 V	—
Thickness

Why these are connected

Related documents with shared materials, methods, properties, or citations.

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