Patent
US 11,289,577DIRECT FORMATION OF HEXAGONAL BORON NITRIDE ON SILICON BASED DIELECTRICS
Vikas Berry
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 11,289,577Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 D, according to the method of the present invention, after direct deposition of layer 300 comprising hexagonal boron nitride on the front surface of the …
FIG. 2A. The homogeneous color contrast in both the OM image and Raman mapping clearly shows a continuous, and uniform h- BN fi lm formation on Si 3 N 4/Si …
FIG. 3A. Nominally, the CVD growth of h-BN is processed via the following five elementary steps: (1) The solid ammonia borane (AB) undergoes sublimation at …
FIG. 4B is a Raman 2D-band spectrum for graphene/h- BN and graphene/Si 3 N 4 heterostructure with the spatial mapping. [0015]
FIG. 5C. See Couto, N. J. G. et al. Random Strain Fluctuations as Dominant Disorder Source for High- Quality On-Substrate Graphene Devices. Physical Review X …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A multilayer structure comprising: a single crystal semiconductor wafer comprising two major, generally parallel surfaces, one of which is a front surface of the single crystal semiconductor wafer and the other of which is a back surface of the single crystal semiconductor wafer, a circumferential edge joining the front and back surfaces of the single crystal semiconductor wafer, a central plane between the front surface and the back surface of the single crystal semiconductor wafer, and a bulk region between the front and back surfaces of the single crystal semiconductor wafer; a layer comprising N-terminated (100) silicon nitride in interfacial contact with the front surface of the single crystal semiconductor wafer; a layer comprising hexagonal boron nitride in interfacial contact with the layer comprising silicon nitride; and a layer comprising graphene in interfacial contact with the layer comprising hexagonal boron nitride, the layer comprising graphene characterized by a ratio I 2D/I G o f at lea s t ab o ut 3, wherein I G is a full-width at half maxima of G-band, I 2D is a full-width at half maxima of 2 D- band position, and the ratio of the intensities of the 2D and G bands (I 2D/I G) is determined via confocal Raman spectroscopy. Currently amended
The multilayer structure of claim 1 wherein the single crystal semiconductor wafer comprises a material selected from the group consisting of silicon, silicon carbide, silicon germanium, gallium arsenide, gallium nitride, indium phosphide, indium gallium arsenide, germanium, and combinations thereof. Original
The multilayer structure of claim 1 wherein the single crystal semiconductor wafer comprises silicon. Original
The multilayer structure of claim 1 wherein the layer comprising N- terminated (100) silicon nitride is neutrally charged. Original
The multilayer structure of claim 1 wherein the hexagonal boron nitride has a molar ratio of B:N is between about 1.3:1 and 1:1.3. Original
The multilayer structure of claim 1 wherein the hexagonal boron nitride has an atomic concentration ratio of nitrogen and boron is 1:1.11 ± 0.09. Original
The multilayer structure of claim 1 wherein the layer comprising graphene has a field effect mobility from about 500 cm 2 V -is- 1 to about 1300 cm 2 V -is- 1. Original
The multilayer structure of claim 1 wherein the layer comprising graphene has an intrinsic charge carrier mobility of at least about 1200 cm 2/Vs. Original
The multilayer structure of claim 1 further comprising a metal film in interfacial contact with the layer comprising graphene. Original
The multilayer structure of claim 1, wherein the layer comprising hexagonal boron nitride is prepared by a process comprising: contacting a front surface of the layer comprising silicon nitride with (i) a boron- containing gas or a boron-containing vapor and (ii) a nitrogen-containing gas or nitrogen- containing vapor at a temperature sufficient to directly deposit the layer comprising hexagonal boron nitride in interfacial contact with the front surface of the layer comprising silicon nitride. New
Canceled
Embodiments described in the patent, grouped by the materials and process steps they use.
3 materials1 process step
Synthesis of hexagonal boron nitride (h-BN) on Si-based nitride (Si₃N₄/Si) substrates via low-pressure CVD (LPCVD) using ammonia-borane (AB) as precursor. Si₃N₄/Si substrates were cleaned with piranha solution, placed in the center of a quartz tube heating zone and heated to 1100°C in H₂ atmosphere. AB was sublimed at ~100°C and transported via H₂ carrier gas. h-BN synthesis was carried out at 5-10 Torr pressure with reaction times of 15-60 min, followed by fast cooling (~100°C/min). Synthesized films were characterized by confocal Raman-AFM and XPS.
2 materials1 process step
Graphene synthesis by chemical vapor deposition on Cu foil. High quality monolayer graphene was grown via CVD on a 1"x2" copper foil (25 μm, 99.98% purity) using CH₄ (99.95% purity) as carbon feedstock and H₂ (99.9999%) as reduction gas.
Layer stacks claimed or described, ordered top of device to substrate.
graphene/h-BN/Si₃N₄/Si multilayer heterostructure
Materials described outside the worked examples.
single crystal semiconductor wafer material
silicon
Si
metal film
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2A. The homogeneous color contrast in both the OM image and Raman mapping clearly shows a continuous, and uniform h- BN fi lm formation on Si 3 N 4/Si …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
field effect mobility of graphene layer (claimed range) | 500–1300 cm2/Vs | graphene |
intrinsic charge carrier mobility of graphene layer (claimed minimum) | ≥ 1200 cm2/Vs |
Related documents with shared materials, methods, properties, or citations.
LARGE-SCALE GRAPHENE SHEET: ARTICLES, COMPOSITIONS, METHODS AND DEVICES INCORPORATING SAME
HEXAGONAL BORON NITRIDE SHEET, METHOD OF PREPARING THE HEXAGONAL BORON NITRIDE SHEET, AND ELECTRONIC DEVICE INCLUDING THE HEXAGONAL BORON NITRIDE SHEET
Patent
Atlas literature
Patent
US 11,289,577Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 D, according to the method of the present invention, after direct deposition of layer 300 comprising hexagonal boron nitride on the front surface of the …
FIG. 2A. The homogeneous color contrast in both the OM image and Raman mapping clearly shows a continuous, and uniform h- BN fi lm formation on Si 3 N 4/Si …
FIG. 3A. Nominally, the CVD growth of h-BN is processed via the following five elementary steps: (1) The solid ammonia borane (AB) undergoes sublimation at …
FIG. 4B is a Raman 2D-band spectrum for graphene/h- BN and graphene/Si 3 N 4 heterostructure with the spatial mapping. [0015]
FIG. 5C. See Couto, N. J. G. et al. Random Strain Fluctuations as Dominant Disorder Source for High- Quality On-Substrate Graphene Devices. Physical Review X …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A multilayer structure comprising: a single crystal semiconductor wafer comprising two major, generally parallel surfaces, one of which is a front surface of the single crystal semiconductor wafer and the other of which is a back surface of the single crystal semiconductor wafer, a circumferential edge joining the front and back surfaces of the single crystal semiconductor wafer, a central plane between the front surface and the back surface of the single crystal semiconductor wafer, and a bulk region between the front and back surfaces of the single crystal semiconductor wafer; a layer comprising N-terminated (100) silicon nitride in interfacial contact with the front surface of the single crystal semiconductor wafer; a layer comprising hexagonal boron nitride in interfacial contact with the layer comprising silicon nitride; and a layer comprising graphene in interfacial contact with the layer comprising hexagonal boron nitride, the layer comprising graphene characterized by a ratio I 2D/I G o f at lea s t ab o ut 3, wherein I G is a full-width at half maxima of G-band, I 2D is a full-width at half maxima of 2 D- band position, and the ratio of the intensities of the 2D and G bands (I 2D/I G) is determined via confocal Raman spectroscopy. Currently amended
The multilayer structure of claim 1 wherein the single crystal semiconductor wafer comprises a material selected from the group consisting of silicon, silicon carbide, silicon germanium, gallium arsenide, gallium nitride, indium phosphide, indium gallium arsenide, germanium, and combinations thereof. Original
The multilayer structure of claim 1 wherein the single crystal semiconductor wafer comprises silicon. Original
The multilayer structure of claim 1 wherein the layer comprising N- terminated (100) silicon nitride is neutrally charged. Original
The multilayer structure of claim 1 wherein the hexagonal boron nitride has a molar ratio of B:N is between about 1.3:1 and 1:1.3. Original
The multilayer structure of claim 1 wherein the hexagonal boron nitride has an atomic concentration ratio of nitrogen and boron is 1:1.11 ± 0.09. Original
The multilayer structure of claim 1 wherein the layer comprising graphene has a field effect mobility from about 500 cm 2 V -is- 1 to about 1300 cm 2 V -is- 1. Original
The multilayer structure of claim 1 wherein the layer comprising graphene has an intrinsic charge carrier mobility of at least about 1200 cm 2/Vs. Original
The multilayer structure of claim 1 further comprising a metal film in interfacial contact with the layer comprising graphene. Original
The multilayer structure of claim 1, wherein the layer comprising hexagonal boron nitride is prepared by a process comprising: contacting a front surface of the layer comprising silicon nitride with (i) a boron- containing gas or a boron-containing vapor and (ii) a nitrogen-containing gas or nitrogen- containing vapor at a temperature sufficient to directly deposit the layer comprising hexagonal boron nitride in interfacial contact with the front surface of the layer comprising silicon nitride. New
Canceled
Embodiments described in the patent, grouped by the materials and process steps they use.
3 materials1 process step
Synthesis of hexagonal boron nitride (h-BN) on Si-based nitride (Si₃N₄/Si) substrates via low-pressure CVD (LPCVD) using ammonia-borane (AB) as precursor. Si₃N₄/Si substrates were cleaned with piranha solution, placed in the center of a quartz tube heating zone and heated to 1100°C in H₂ atmosphere. AB was sublimed at ~100°C and transported via H₂ carrier gas. h-BN synthesis was carried out at 5-10 Torr pressure with reaction times of 15-60 min, followed by fast cooling (~100°C/min). Synthesized films were characterized by confocal Raman-AFM and XPS.
2 materials1 process step
Graphene synthesis by chemical vapor deposition on Cu foil. High quality monolayer graphene was grown via CVD on a 1"x2" copper foil (25 μm, 99.98% purity) using CH₄ (99.95% purity) as carbon feedstock and H₂ (99.9999%) as reduction gas.
Layer stacks claimed or described, ordered top of device to substrate.
graphene/h-BN/Si₃N₄/Si multilayer heterostructure
Materials described outside the worked examples.
single crystal semiconductor wafer material
silicon
Si
metal film
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2A. The homogeneous color contrast in both the OM image and Raman mapping clearly shows a continuous, and uniform h- BN fi lm formation on Si 3 N 4/Si …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
field effect mobility of graphene layer (claimed range) | 500–1300 cm2/Vs | graphene |
intrinsic charge carrier mobility of graphene layer (claimed minimum) | ≥ 1200 cm2/Vs |
Related documents with shared materials, methods, properties, or citations.
LARGE-SCALE GRAPHENE SHEET: ARTICLES, COMPOSITIONS, METHODS AND DEVICES INCORPORATING SAME
HEXAGONAL BORON NITRIDE SHEET, METHOD OF PREPARING THE HEXAGONAL BORON NITRIDE SHEET, AND ELECTRONIC DEVICE INCLUDING THE HEXAGONAL BORON NITRIDE SHEET
Patent
Atlas literature
Patent
US 11,289,577Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 D, according to the method of the present invention, after direct deposition of layer 300 comprising hexagonal boron nitride on the front surface of the …
FIG. 2A. The homogeneous color contrast in both the OM image and Raman mapping clearly shows a continuous, and uniform h- BN fi lm formation on Si 3 N 4/Si …
FIG. 3A. Nominally, the CVD growth of h-BN is processed via the following five elementary steps: (1) The solid ammonia borane (AB) undergoes sublimation at …
FIG. 4B is a Raman 2D-band spectrum for graphene/h- BN and graphene/Si 3 N 4 heterostructure with the spatial mapping. [0015]
FIG. 5C. See Couto, N. J. G. et al. Random Strain Fluctuations as Dominant Disorder Source for High- Quality On-Substrate Graphene Devices. Physical Review X …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A multilayer structure comprising: a single crystal semiconductor wafer comprising two major, generally parallel surfaces, one of which is a front surface of the single crystal semiconductor wafer and the other of which is a back surface of the single crystal semiconductor wafer, a circumferential edge joining the front and back surfaces of the single crystal semiconductor wafer, a central plane between the front surface and the back surface of the single crystal semiconductor wafer, and a bulk region between the front and back surfaces of the single crystal semiconductor wafer; a layer comprising N-terminated (100) silicon nitride in interfacial contact with the front surface of the single crystal semiconductor wafer; a layer comprising hexagonal boron nitride in interfacial contact with the layer comprising silicon nitride; and a layer comprising graphene in interfacial contact with the layer comprising hexagonal boron nitride, the layer comprising graphene characterized by a ratio I 2D/I G o f at lea s t ab o ut 3, wherein I G is a full-width at half maxima of G-band, I 2D is a full-width at half maxima of 2 D- band position, and the ratio of the intensities of the 2D and G bands (I 2D/I G) is determined via confocal Raman spectroscopy. Currently amended
The multilayer structure of claim 1 wherein the single crystal semiconductor wafer comprises a material selected from the group consisting of silicon, silicon carbide, silicon germanium, gallium arsenide, gallium nitride, indium phosphide, indium gallium arsenide, germanium, and combinations thereof. Original
The multilayer structure of claim 1 wherein the single crystal semiconductor wafer comprises silicon. Original
The multilayer structure of claim 1 wherein the layer comprising N- terminated (100) silicon nitride is neutrally charged. Original
The multilayer structure of claim 1 wherein the hexagonal boron nitride has a molar ratio of B:N is between about 1.3:1 and 1:1.3. Original
The multilayer structure of claim 1 wherein the hexagonal boron nitride has an atomic concentration ratio of nitrogen and boron is 1:1.11 ± 0.09. Original
The multilayer structure of claim 1 wherein the layer comprising graphene has a field effect mobility from about 500 cm 2 V -is- 1 to about 1300 cm 2 V -is- 1. Original
The multilayer structure of claim 1 wherein the layer comprising graphene has an intrinsic charge carrier mobility of at least about 1200 cm 2/Vs. Original
The multilayer structure of claim 1 further comprising a metal film in interfacial contact with the layer comprising graphene. Original
The multilayer structure of claim 1, wherein the layer comprising hexagonal boron nitride is prepared by a process comprising: contacting a front surface of the layer comprising silicon nitride with (i) a boron- containing gas or a boron-containing vapor and (ii) a nitrogen-containing gas or nitrogen- containing vapor at a temperature sufficient to directly deposit the layer comprising hexagonal boron nitride in interfacial contact with the front surface of the layer comprising silicon nitride. New
Canceled
Embodiments described in the patent, grouped by the materials and process steps they use.
3 materials1 process step
Synthesis of hexagonal boron nitride (h-BN) on Si-based nitride (Si₃N₄/Si) substrates via low-pressure CVD (LPCVD) using ammonia-borane (AB) as precursor. Si₃N₄/Si substrates were cleaned with piranha solution, placed in the center of a quartz tube heating zone and heated to 1100°C in H₂ atmosphere. AB was sublimed at ~100°C and transported via H₂ carrier gas. h-BN synthesis was carried out at 5-10 Torr pressure with reaction times of 15-60 min, followed by fast cooling (~100°C/min). Synthesized films were characterized by confocal Raman-AFM and XPS.
2 materials1 process step
Graphene synthesis by chemical vapor deposition on Cu foil. High quality monolayer graphene was grown via CVD on a 1"x2" copper foil (25 μm, 99.98% purity) using CH₄ (99.95% purity) as carbon feedstock and H₂ (99.9999%) as reduction gas.
Layer stacks claimed or described, ordered top of device to substrate.
graphene/h-BN/Si₃N₄/Si multilayer heterostructure
Materials described outside the worked examples.
single crystal semiconductor wafer material
silicon
Si
metal film
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2A. The homogeneous color contrast in both the OM image and Raman mapping clearly shows a continuous, and uniform h- BN fi lm formation on Si 3 N 4/Si …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
field effect mobility of graphene layer (claimed range) | 500–1300 cm2/Vs | graphene |
intrinsic charge carrier mobility of graphene layer (claimed minimum) | ≥ 1200 cm2/Vs |
Related documents with shared materials, methods, properties, or citations.
LARGE-SCALE GRAPHENE SHEET: ARTICLES, COMPOSITIONS, METHODS AND DEVICES INCORPORATING SAME
HEXAGONAL BORON NITRIDE SHEET, METHOD OF PREPARING THE HEXAGONAL BORON NITRIDE SHEET, AND ELECTRONIC DEVICE INCLUDING THE HEXAGONAL BORON NITRIDE SHEET
Patent
Atlas literature
Patent
US 11,289,577Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 D, according to the method of the present invention, after direct deposition of layer 300 comprising hexagonal boron nitride on the front surface of the …
FIG. 2A. The homogeneous color contrast in both the OM image and Raman mapping clearly shows a continuous, and uniform h- BN fi lm formation on Si 3 N 4/Si …
FIG. 3A. Nominally, the CVD growth of h-BN is processed via the following five elementary steps: (1) The solid ammonia borane (AB) undergoes sublimation at …
FIG. 4B is a Raman 2D-band spectrum for graphene/h- BN and graphene/Si 3 N 4 heterostructure with the spatial mapping. [0015]
FIG. 5C. See Couto, N. J. G. et al. Random Strain Fluctuations as Dominant Disorder Source for High- Quality On-Substrate Graphene Devices. Physical Review X …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A multilayer structure comprising: a single crystal semiconductor wafer comprising two major, generally parallel surfaces, one of which is a front surface of the single crystal semiconductor wafer and the other of which is a back surface of the single crystal semiconductor wafer, a circumferential edge joining the front and back surfaces of the single crystal semiconductor wafer, a central plane between the front surface and the back surface of the single crystal semiconductor wafer, and a bulk region between the front and back surfaces of the single crystal semiconductor wafer; a layer comprising N-terminated (100) silicon nitride in interfacial contact with the front surface of the single crystal semiconductor wafer; a layer comprising hexagonal boron nitride in interfacial contact with the layer comprising silicon nitride; and a layer comprising graphene in interfacial contact with the layer comprising hexagonal boron nitride, the layer comprising graphene characterized by a ratio I 2D/I G o f at lea s t ab o ut 3, wherein I G is a full-width at half maxima of G-band, I 2D is a full-width at half maxima of 2 D- band position, and the ratio of the intensities of the 2D and G bands (I 2D/I G) is determined via confocal Raman spectroscopy. Currently amended
The multilayer structure of claim 1 wherein the single crystal semiconductor wafer comprises a material selected from the group consisting of silicon, silicon carbide, silicon germanium, gallium arsenide, gallium nitride, indium phosphide, indium gallium arsenide, germanium, and combinations thereof. Original
The multilayer structure of claim 1 wherein the single crystal semiconductor wafer comprises silicon. Original
The multilayer structure of claim 1 wherein the layer comprising N- terminated (100) silicon nitride is neutrally charged. Original
The multilayer structure of claim 1 wherein the hexagonal boron nitride has a molar ratio of B:N is between about 1.3:1 and 1:1.3. Original
The multilayer structure of claim 1 wherein the hexagonal boron nitride has an atomic concentration ratio of nitrogen and boron is 1:1.11 ± 0.09. Original
The multilayer structure of claim 1 wherein the layer comprising graphene has a field effect mobility from about 500 cm 2 V -is- 1 to about 1300 cm 2 V -is- 1. Original
The multilayer structure of claim 1 wherein the layer comprising graphene has an intrinsic charge carrier mobility of at least about 1200 cm 2/Vs. Original
The multilayer structure of claim 1 further comprising a metal film in interfacial contact with the layer comprising graphene. Original
The multilayer structure of claim 1, wherein the layer comprising hexagonal boron nitride is prepared by a process comprising: contacting a front surface of the layer comprising silicon nitride with (i) a boron- containing gas or a boron-containing vapor and (ii) a nitrogen-containing gas or nitrogen- containing vapor at a temperature sufficient to directly deposit the layer comprising hexagonal boron nitride in interfacial contact with the front surface of the layer comprising silicon nitride. New
Canceled
Embodiments described in the patent, grouped by the materials and process steps they use.
3 materials1 process step
Synthesis of hexagonal boron nitride (h-BN) on Si-based nitride (Si₃N₄/Si) substrates via low-pressure CVD (LPCVD) using ammonia-borane (AB) as precursor. Si₃N₄/Si substrates were cleaned with piranha solution, placed in the center of a quartz tube heating zone and heated to 1100°C in H₂ atmosphere. AB was sublimed at ~100°C and transported via H₂ carrier gas. h-BN synthesis was carried out at 5-10 Torr pressure with reaction times of 15-60 min, followed by fast cooling (~100°C/min). Synthesized films were characterized by confocal Raman-AFM and XPS.
2 materials1 process step
Graphene synthesis by chemical vapor deposition on Cu foil. High quality monolayer graphene was grown via CVD on a 1"x2" copper foil (25 μm, 99.98% purity) using CH₄ (99.95% purity) as carbon feedstock and H₂ (99.9999%) as reduction gas.
Layer stacks claimed or described, ordered top of device to substrate.
graphene/h-BN/Si₃N₄/Si multilayer heterostructure
Materials described outside the worked examples.
single crystal semiconductor wafer material
silicon
Si
metal film
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2A. The homogeneous color contrast in both the OM image and Raman mapping clearly shows a continuous, and uniform h- BN fi lm formation on Si 3 N 4/Si …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
field effect mobility of graphene layer (claimed range) | 500–1300 cm2/Vs | graphene |
intrinsic charge carrier mobility of graphene layer (claimed minimum) | ≥ 1200 cm2/Vs |
Related documents with shared materials, methods, properties, or citations.
LARGE-SCALE GRAPHENE SHEET: ARTICLES, COMPOSITIONS, METHODS AND DEVICES INCORPORATING SAME
HEXAGONAL BORON NITRIDE SHEET, METHOD OF PREPARING THE HEXAGONAL BORON NITRIDE SHEET, AND ELECTRONIC DEVICE INCLUDING THE HEXAGONAL BORON NITRIDE SHEET
FIG. 2A. The homogeneous color contrast in both the OM image and Raman mapping clearly shows a continuous, and uniform h- BN fi lm formation on Si 3 N 4/Si …
FIG. 2A. The homogeneous color contrast in both the OM image and Raman mapping clearly shows a continuous, and uniform h- BN fi lm formation on Si 3 N 4/Si …
FIG. 3A. Nominally, the CVD growth of h-BN is processed via the following five elementary steps: (1) The solid ammonia borane (AB) undergoes sublimation at …
FIG. 3A. Nominally, the CVD growth of h-BN is processed via the following five elementary steps: (1) The solid ammonia borane (AB) undergoes sublimation at …
FIG. 4B is a Raman 2D-band spectrum for graphene/h- BN and graphene/Si 3 N 4 heterostructure with the spatial mapping. [0015]
FIG. 5C. See Couto, N. J. G. et al. Random Strain Fluctuations as Dominant Disorder Source for High- Quality On-Substrate Graphene Devices. Physical Review X …
FIG. 5C. See Couto, N. J. G. et al. Random Strain Fluctuations as Dominant Disorder Source for High- Quality On-Substrate Graphene Devices. Physical Review X …
intrinsic charge carrier mobility enhancement for graphene on h-BN/Si3N4/Si (3-fold vs. Si3N4/Si alone) | — | graphene |
Pressure | 5–10 Torr | — |
Voltage | 535–550 V | — |
Thickness | 1–1300 cm | — |
Thickness | ≥ 1200 cm | — |
FIG. 2A. The homogeneous color contrast in both the OM image and Raman mapping clearly shows a continuous, and uniform h- BN fi lm formation on Si 3 N 4/Si …
FIG. 2A. The homogeneous color contrast in both the OM image and Raman mapping clearly shows a continuous, and uniform h- BN fi lm formation on Si 3 N 4/Si …
FIG. 3A. Nominally, the CVD growth of h-BN is processed via the following five elementary steps: (1) The solid ammonia borane (AB) undergoes sublimation at …
FIG. 3A. Nominally, the CVD growth of h-BN is processed via the following five elementary steps: (1) The solid ammonia borane (AB) undergoes sublimation at …
FIG. 4B is a Raman 2D-band spectrum for graphene/h- BN and graphene/Si 3 N 4 heterostructure with the spatial mapping. [0015]
FIG. 5C. See Couto, N. J. G. et al. Random Strain Fluctuations as Dominant Disorder Source for High- Quality On-Substrate Graphene Devices. Physical Review X …
FIG. 5C. See Couto, N. J. G. et al. Random Strain Fluctuations as Dominant Disorder Source for High- Quality On-Substrate Graphene Devices. Physical Review X …
intrinsic charge carrier mobility enhancement for graphene on h-BN/Si3N4/Si (3-fold vs. Si3N4/Si alone) | — | graphene |
Pressure | 5–10 Torr | — |
Voltage | 535–550 V | — |
Thickness | 1–1300 cm | — |
Thickness | ≥ 1200 cm | — |
FIG. 2A. The homogeneous color contrast in both the OM image and Raman mapping clearly shows a continuous, and uniform h- BN fi lm formation on Si 3 N 4/Si …
FIG. 2A. The homogeneous color contrast in both the OM image and Raman mapping clearly shows a continuous, and uniform h- BN fi lm formation on Si 3 N 4/Si …
FIG. 3A. Nominally, the CVD growth of h-BN is processed via the following five elementary steps: (1) The solid ammonia borane (AB) undergoes sublimation at …
FIG. 3A. Nominally, the CVD growth of h-BN is processed via the following five elementary steps: (1) The solid ammonia borane (AB) undergoes sublimation at …
FIG. 4B is a Raman 2D-band spectrum for graphene/h- BN and graphene/Si 3 N 4 heterostructure with the spatial mapping. [0015]
FIG. 5C. See Couto, N. J. G. et al. Random Strain Fluctuations as Dominant Disorder Source for High- Quality On-Substrate Graphene Devices. Physical Review X …
FIG. 5C. See Couto, N. J. G. et al. Random Strain Fluctuations as Dominant Disorder Source for High- Quality On-Substrate Graphene Devices. Physical Review X …
intrinsic charge carrier mobility enhancement for graphene on h-BN/Si3N4/Si (3-fold vs. Si3N4/Si alone) | — | graphene |
Pressure | 5–10 Torr | — |
Voltage | 535–550 V | — |
Thickness | 1–1300 cm | — |
Thickness | ≥ 1200 cm | — |
FIG. 2A. The homogeneous color contrast in both the OM image and Raman mapping clearly shows a continuous, and uniform h- BN fi lm formation on Si 3 N 4/Si …
FIG. 2A. The homogeneous color contrast in both the OM image and Raman mapping clearly shows a continuous, and uniform h- BN fi lm formation on Si 3 N 4/Si …
FIG. 3A. Nominally, the CVD growth of h-BN is processed via the following five elementary steps: (1) The solid ammonia borane (AB) undergoes sublimation at …
FIG. 3A. Nominally, the CVD growth of h-BN is processed via the following five elementary steps: (1) The solid ammonia borane (AB) undergoes sublimation at …
FIG. 4B is a Raman 2D-band spectrum for graphene/h- BN and graphene/Si 3 N 4 heterostructure with the spatial mapping. [0015]
FIG. 5C. See Couto, N. J. G. et al. Random Strain Fluctuations as Dominant Disorder Source for High- Quality On-Substrate Graphene Devices. Physical Review X …
FIG. 5C. See Couto, N. J. G. et al. Random Strain Fluctuations as Dominant Disorder Source for High- Quality On-Substrate Graphene Devices. Physical Review X …
intrinsic charge carrier mobility enhancement for graphene on h-BN/Si3N4/Si (3-fold vs. Si3N4/Si alone) | — | graphene |
Pressure | 5–10 Torr | — |
Voltage | 535–550 V | — |
Thickness | 1–1300 cm | — |
Thickness | ≥ 1200 cm | — |