Patent
US 10,837,102METHOD AND SYSTEM FOR GRAPHENE FORMATION
David A. BOYD, Nai-Chang Yeh
CALIFORNIA I NSTITUTE OF TECHNOLOGY·US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 10,837,102Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 and can include fewer or a greater number of sources. In the illustrated embodiment, the gas sources are H2, (130) and N 2 (132), which are used as a …
FIG. 2 is a simplified flowchart illustrating a method of producing graphene according to an embodiment of the present invention. The method includes placing a …
FIG. 3, the spectrum includes negative absorption peaks that indicate an increase in a component and positive peaks that indicate a decrease. It should be …
FIG. 4D. Moreover, unlike the fragile monolayer films produced by thermal CVD at 1000 ° C, each ~ 1 cm 2 LT-grown graphene sheet remained fully intact upon …
FIG. 5 L). As illustrated in these figures, all LT-grown graphene exhibited much better ordered honeycombstructures and smoother surface morphology. In …
FIGS. 6G and 6H are height histograms for 1000 ° C-grown graphene on a polycrystalline foil measured over an area of 10 x 10 nm 2 and an area of 3 x 3 nm 2, …
FIG. 7A.
FIGS. 8J, 8L, 8N, and 8P were obtained from Raman spectroscopic studies of different areas of multiple samples fabricated under the same condition for the …
FIGS. 9A-9E. As illustrated in these figures, LT- grown graphene on Cu single crystals exhibited Moir d patterns, as manifested by the second set of smaller …
FIG. 10 B. In this alternative design, built-in strain in graphene nano-bubbles 1020 is achieved by transferring LT-graphene 1030 to a nano-engineered …
FIG. 11B, the px x-vs.- V g data (V g being the gate voltage, which is directly proportional to the two-dimensional carrier density n2D in the graphene sheet …
FIG. 12, for a graphene sheet 1210 suspended above a triangular hole ~ 200 nm on a side 1212, a gate voltage V g of 80 V could produce a cyclotron radius of ~ …
FIG. 13C is a table listing electron mobility data for nine different back-gated FET devices. DETAILED DESCRIPTION OF SPECIFIC EMBODIMENTS [0037] An approach …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of forming graphene, the method comprising: placing a growth substrate in a processing chamber; introducing a cleaning gas including hydrogen and nitrogen into the processing chamber; introducing a carbon source into the processing chamber; initiating a microwave plasma in the processing chamber; forming c y ano radicals from the carbon source and the nitrogen in the processing chamber in the presence of the microwave plasma; cleaning the growth substrate with the cyano radicals formed in the processing chamber; and subjecting the growth substrate to the microwave plasma and a fl ow of the cleaning gas and the carbon source for a predetermined period of time to form the graphene characterized by grains ranging in size between 100 p m and 300 p m; with the microwave plasma, while forming the graphene having a maximum temperature at the center of the microwave plasma, wherein the maximum temperature is 425 0 C and a temperature of the growth substrate is less than the maximum temperature. Currently amended
The method of claim 1 wherein the graphene consists of a single monolayer. Previously presented
The method of claim 1 wherein the graphene is characterized by a measurement area in a unit of length squared and a height variation measured in the unit of length, wherein the measurement area is between 4 nm 2 and 100 nm 2, and a ratio of the height variation to the measurement area is less than 10% per unit of length. Previously presented
The method of claim 1 wherein introducing the cleaning gas and introducing the carbon source are performed concurrently. Previously presented
The method of claim 1 wherein the carbon source comprises methane. Previously presented
The method of claim 1 wherein the growth substrate comprises a copper substrate. Currently amended
The method of claim 1 further comprising removing native oxide present on the growth substrate after initiating the microwave plasma. Previously presented
The method of claim 1 wherein the growth substrate is a polycrystalline copper foil and the graphene is characterized by a first Raman peak associated with a 2 D -band mode and a second Raman peak associated with a G-band mode, wherein a ratio of the first Raman peak to the second Raman peak is about three. Currently amended
The method of claim 1 wherein the growth substrate is a polycrystalline copper foil and the graphene is characterized by a Raman spectra having a G-band peak less than a G-band peak of 1000 0 C grown graphene. Currently amended
The method of claim 1 wherein the growth substrate is a pol ycry stalline copper foil and the graphene is characterized by a Raman spectra having a 2 D -band peak measured in wavenumbers less than a 2 D -band peak o f 1000 0 C grown graphene. Currently amended
. Canceled
. Canceled
Materials described outside the worked examples.
graphene
C
cleaning gas (hydrogen and nitrogen)
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 and can include fewer or a greater number of sources. In the illustrated embodiment, the gas sources are H2, (130) and N 2 (132), which are used as a …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
electrical mobility up to 60,000 cm2/V-s on BN at 300 K | 60000 | graphene on BN |
graphene grain size 100-300 um (typically >100 um, ~250-300 um in length) | 100–300 |
Related documents with shared materials, methods, properties, or citations.
METHOD AND SYSTEM FOR GROWTH OF GRAPHENE NANOSTRIPES BY PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION
Electron-beam-induced Contactless Manipulation of Interlayer Twist in van der Waals Heterostructures
Patent
Atlas literature
Patent
US 10,837,102Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 and can include fewer or a greater number of sources. In the illustrated embodiment, the gas sources are H2, (130) and N 2 (132), which are used as a …
FIG. 2 is a simplified flowchart illustrating a method of producing graphene according to an embodiment of the present invention. The method includes placing a …
FIG. 3, the spectrum includes negative absorption peaks that indicate an increase in a component and positive peaks that indicate a decrease. It should be …
FIG. 4D. Moreover, unlike the fragile monolayer films produced by thermal CVD at 1000 ° C, each ~ 1 cm 2 LT-grown graphene sheet remained fully intact upon …
FIG. 5 L). As illustrated in these figures, all LT-grown graphene exhibited much better ordered honeycombstructures and smoother surface morphology. In …
FIGS. 6G and 6H are height histograms for 1000 ° C-grown graphene on a polycrystalline foil measured over an area of 10 x 10 nm 2 and an area of 3 x 3 nm 2, …
FIG. 7A.
FIGS. 8J, 8L, 8N, and 8P were obtained from Raman spectroscopic studies of different areas of multiple samples fabricated under the same condition for the …
FIGS. 9A-9E. As illustrated in these figures, LT- grown graphene on Cu single crystals exhibited Moir d patterns, as manifested by the second set of smaller …
FIG. 10 B. In this alternative design, built-in strain in graphene nano-bubbles 1020 is achieved by transferring LT-graphene 1030 to a nano-engineered …
FIG. 11B, the px x-vs.- V g data (V g being the gate voltage, which is directly proportional to the two-dimensional carrier density n2D in the graphene sheet …
FIG. 12, for a graphene sheet 1210 suspended above a triangular hole ~ 200 nm on a side 1212, a gate voltage V g of 80 V could produce a cyclotron radius of ~ …
FIG. 13C is a table listing electron mobility data for nine different back-gated FET devices. DETAILED DESCRIPTION OF SPECIFIC EMBODIMENTS [0037] An approach …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of forming graphene, the method comprising: placing a growth substrate in a processing chamber; introducing a cleaning gas including hydrogen and nitrogen into the processing chamber; introducing a carbon source into the processing chamber; initiating a microwave plasma in the processing chamber; forming c y ano radicals from the carbon source and the nitrogen in the processing chamber in the presence of the microwave plasma; cleaning the growth substrate with the cyano radicals formed in the processing chamber; and subjecting the growth substrate to the microwave plasma and a fl ow of the cleaning gas and the carbon source for a predetermined period of time to form the graphene characterized by grains ranging in size between 100 p m and 300 p m; with the microwave plasma, while forming the graphene having a maximum temperature at the center of the microwave plasma, wherein the maximum temperature is 425 0 C and a temperature of the growth substrate is less than the maximum temperature. Currently amended
The method of claim 1 wherein the graphene consists of a single monolayer. Previously presented
The method of claim 1 wherein the graphene is characterized by a measurement area in a unit of length squared and a height variation measured in the unit of length, wherein the measurement area is between 4 nm 2 and 100 nm 2, and a ratio of the height variation to the measurement area is less than 10% per unit of length. Previously presented
The method of claim 1 wherein introducing the cleaning gas and introducing the carbon source are performed concurrently. Previously presented
The method of claim 1 wherein the carbon source comprises methane. Previously presented
The method of claim 1 wherein the growth substrate comprises a copper substrate. Currently amended
The method of claim 1 further comprising removing native oxide present on the growth substrate after initiating the microwave plasma. Previously presented
The method of claim 1 wherein the growth substrate is a polycrystalline copper foil and the graphene is characterized by a first Raman peak associated with a 2 D -band mode and a second Raman peak associated with a G-band mode, wherein a ratio of the first Raman peak to the second Raman peak is about three. Currently amended
The method of claim 1 wherein the growth substrate is a polycrystalline copper foil and the graphene is characterized by a Raman spectra having a G-band peak less than a G-band peak of 1000 0 C grown graphene. Currently amended
The method of claim 1 wherein the growth substrate is a pol ycry stalline copper foil and the graphene is characterized by a Raman spectra having a 2 D -band peak measured in wavenumbers less than a 2 D -band peak o f 1000 0 C grown graphene. Currently amended
. Canceled
. Canceled
Materials described outside the worked examples.
graphene
C
cleaning gas (hydrogen and nitrogen)
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 and can include fewer or a greater number of sources. In the illustrated embodiment, the gas sources are H2, (130) and N 2 (132), which are used as a …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
electrical mobility up to 60,000 cm2/V-s on BN at 300 K | 60000 | graphene on BN |
graphene grain size 100-300 um (typically >100 um, ~250-300 um in length) | 100–300 |
Related documents with shared materials, methods, properties, or citations.
METHOD AND SYSTEM FOR GROWTH OF GRAPHENE NANOSTRIPES BY PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION
Electron-beam-induced Contactless Manipulation of Interlayer Twist in van der Waals Heterostructures
Patent
Atlas literature
Patent
US 10,837,102Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 and can include fewer or a greater number of sources. In the illustrated embodiment, the gas sources are H2, (130) and N 2 (132), which are used as a …
FIG. 2 is a simplified flowchart illustrating a method of producing graphene according to an embodiment of the present invention. The method includes placing a …
FIG. 3, the spectrum includes negative absorption peaks that indicate an increase in a component and positive peaks that indicate a decrease. It should be …
FIG. 4D. Moreover, unlike the fragile monolayer films produced by thermal CVD at 1000 ° C, each ~ 1 cm 2 LT-grown graphene sheet remained fully intact upon …
FIG. 5 L). As illustrated in these figures, all LT-grown graphene exhibited much better ordered honeycombstructures and smoother surface morphology. In …
FIGS. 6G and 6H are height histograms for 1000 ° C-grown graphene on a polycrystalline foil measured over an area of 10 x 10 nm 2 and an area of 3 x 3 nm 2, …
FIG. 7A.
FIGS. 8J, 8L, 8N, and 8P were obtained from Raman spectroscopic studies of different areas of multiple samples fabricated under the same condition for the …
FIGS. 9A-9E. As illustrated in these figures, LT- grown graphene on Cu single crystals exhibited Moir d patterns, as manifested by the second set of smaller …
FIG. 10 B. In this alternative design, built-in strain in graphene nano-bubbles 1020 is achieved by transferring LT-graphene 1030 to a nano-engineered …
FIG. 11B, the px x-vs.- V g data (V g being the gate voltage, which is directly proportional to the two-dimensional carrier density n2D in the graphene sheet …
FIG. 12, for a graphene sheet 1210 suspended above a triangular hole ~ 200 nm on a side 1212, a gate voltage V g of 80 V could produce a cyclotron radius of ~ …
FIG. 13C is a table listing electron mobility data for nine different back-gated FET devices. DETAILED DESCRIPTION OF SPECIFIC EMBODIMENTS [0037] An approach …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of forming graphene, the method comprising: placing a growth substrate in a processing chamber; introducing a cleaning gas including hydrogen and nitrogen into the processing chamber; introducing a carbon source into the processing chamber; initiating a microwave plasma in the processing chamber; forming c y ano radicals from the carbon source and the nitrogen in the processing chamber in the presence of the microwave plasma; cleaning the growth substrate with the cyano radicals formed in the processing chamber; and subjecting the growth substrate to the microwave plasma and a fl ow of the cleaning gas and the carbon source for a predetermined period of time to form the graphene characterized by grains ranging in size between 100 p m and 300 p m; with the microwave plasma, while forming the graphene having a maximum temperature at the center of the microwave plasma, wherein the maximum temperature is 425 0 C and a temperature of the growth substrate is less than the maximum temperature. Currently amended
The method of claim 1 wherein the graphene consists of a single monolayer. Previously presented
The method of claim 1 wherein the graphene is characterized by a measurement area in a unit of length squared and a height variation measured in the unit of length, wherein the measurement area is between 4 nm 2 and 100 nm 2, and a ratio of the height variation to the measurement area is less than 10% per unit of length. Previously presented
The method of claim 1 wherein introducing the cleaning gas and introducing the carbon source are performed concurrently. Previously presented
The method of claim 1 wherein the carbon source comprises methane. Previously presented
The method of claim 1 wherein the growth substrate comprises a copper substrate. Currently amended
The method of claim 1 further comprising removing native oxide present on the growth substrate after initiating the microwave plasma. Previously presented
The method of claim 1 wherein the growth substrate is a polycrystalline copper foil and the graphene is characterized by a first Raman peak associated with a 2 D -band mode and a second Raman peak associated with a G-band mode, wherein a ratio of the first Raman peak to the second Raman peak is about three. Currently amended
The method of claim 1 wherein the growth substrate is a polycrystalline copper foil and the graphene is characterized by a Raman spectra having a G-band peak less than a G-band peak of 1000 0 C grown graphene. Currently amended
The method of claim 1 wherein the growth substrate is a pol ycry stalline copper foil and the graphene is characterized by a Raman spectra having a 2 D -band peak measured in wavenumbers less than a 2 D -band peak o f 1000 0 C grown graphene. Currently amended
. Canceled
. Canceled
Materials described outside the worked examples.
graphene
C
cleaning gas (hydrogen and nitrogen)
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 and can include fewer or a greater number of sources. In the illustrated embodiment, the gas sources are H2, (130) and N 2 (132), which are used as a …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
electrical mobility up to 60,000 cm2/V-s on BN at 300 K | 60000 | graphene on BN |
graphene grain size 100-300 um (typically >100 um, ~250-300 um in length) | 100–300 |
Related documents with shared materials, methods, properties, or citations.
METHOD AND SYSTEM FOR GROWTH OF GRAPHENE NANOSTRIPES BY PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION
Electron-beam-induced Contactless Manipulation of Interlayer Twist in van der Waals Heterostructures
Patent
Atlas literature
Patent
US 10,837,102Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 and can include fewer or a greater number of sources. In the illustrated embodiment, the gas sources are H2, (130) and N 2 (132), which are used as a …
FIG. 2 is a simplified flowchart illustrating a method of producing graphene according to an embodiment of the present invention. The method includes placing a …
FIG. 3, the spectrum includes negative absorption peaks that indicate an increase in a component and positive peaks that indicate a decrease. It should be …
FIG. 4D. Moreover, unlike the fragile monolayer films produced by thermal CVD at 1000 ° C, each ~ 1 cm 2 LT-grown graphene sheet remained fully intact upon …
FIG. 5 L). As illustrated in these figures, all LT-grown graphene exhibited much better ordered honeycombstructures and smoother surface morphology. In …
FIGS. 6G and 6H are height histograms for 1000 ° C-grown graphene on a polycrystalline foil measured over an area of 10 x 10 nm 2 and an area of 3 x 3 nm 2, …
FIG. 7A.
FIGS. 8J, 8L, 8N, and 8P were obtained from Raman spectroscopic studies of different areas of multiple samples fabricated under the same condition for the …
FIGS. 9A-9E. As illustrated in these figures, LT- grown graphene on Cu single crystals exhibited Moir d patterns, as manifested by the second set of smaller …
FIG. 10 B. In this alternative design, built-in strain in graphene nano-bubbles 1020 is achieved by transferring LT-graphene 1030 to a nano-engineered …
FIG. 11B, the px x-vs.- V g data (V g being the gate voltage, which is directly proportional to the two-dimensional carrier density n2D in the graphene sheet …
FIG. 12, for a graphene sheet 1210 suspended above a triangular hole ~ 200 nm on a side 1212, a gate voltage V g of 80 V could produce a cyclotron radius of ~ …
FIG. 13C is a table listing electron mobility data for nine different back-gated FET devices. DETAILED DESCRIPTION OF SPECIFIC EMBODIMENTS [0037] An approach …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of forming graphene, the method comprising: placing a growth substrate in a processing chamber; introducing a cleaning gas including hydrogen and nitrogen into the processing chamber; introducing a carbon source into the processing chamber; initiating a microwave plasma in the processing chamber; forming c y ano radicals from the carbon source and the nitrogen in the processing chamber in the presence of the microwave plasma; cleaning the growth substrate with the cyano radicals formed in the processing chamber; and subjecting the growth substrate to the microwave plasma and a fl ow of the cleaning gas and the carbon source for a predetermined period of time to form the graphene characterized by grains ranging in size between 100 p m and 300 p m; with the microwave plasma, while forming the graphene having a maximum temperature at the center of the microwave plasma, wherein the maximum temperature is 425 0 C and a temperature of the growth substrate is less than the maximum temperature. Currently amended
The method of claim 1 wherein the graphene consists of a single monolayer. Previously presented
The method of claim 1 wherein the graphene is characterized by a measurement area in a unit of length squared and a height variation measured in the unit of length, wherein the measurement area is between 4 nm 2 and 100 nm 2, and a ratio of the height variation to the measurement area is less than 10% per unit of length. Previously presented
The method of claim 1 wherein introducing the cleaning gas and introducing the carbon source are performed concurrently. Previously presented
The method of claim 1 wherein the carbon source comprises methane. Previously presented
The method of claim 1 wherein the growth substrate comprises a copper substrate. Currently amended
The method of claim 1 further comprising removing native oxide present on the growth substrate after initiating the microwave plasma. Previously presented
The method of claim 1 wherein the growth substrate is a polycrystalline copper foil and the graphene is characterized by a first Raman peak associated with a 2 D -band mode and a second Raman peak associated with a G-band mode, wherein a ratio of the first Raman peak to the second Raman peak is about three. Currently amended
The method of claim 1 wherein the growth substrate is a polycrystalline copper foil and the graphene is characterized by a Raman spectra having a G-band peak less than a G-band peak of 1000 0 C grown graphene. Currently amended
The method of claim 1 wherein the growth substrate is a pol ycry stalline copper foil and the graphene is characterized by a Raman spectra having a 2 D -band peak measured in wavenumbers less than a 2 D -band peak o f 1000 0 C grown graphene. Currently amended
. Canceled
. Canceled
Materials described outside the worked examples.
graphene
C
cleaning gas (hydrogen and nitrogen)
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 and can include fewer or a greater number of sources. In the illustrated embodiment, the gas sources are H2, (130) and N 2 (132), which are used as a …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
electrical mobility up to 60,000 cm2/V-s on BN at 300 K | 60000 | graphene on BN |
graphene grain size 100-300 um (typically >100 um, ~250-300 um in length) | 100–300 |
Related documents with shared materials, methods, properties, or citations.
METHOD AND SYSTEM FOR GROWTH OF GRAPHENE NANOSTRIPES BY PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION
Electron-beam-induced Contactless Manipulation of Interlayer Twist in van der Waals Heterostructures
carbon source
cyano radicals
CN
methane
CH₄
copper substrate
Cu
graphene on BN
boron nitride (BN)
BN
FIG. 2 is a simplified flowchart illustrating a method of producing graphene according to an embodiment of the present invention. The method includes placing a …
FIG. 3, the spectrum includes negative absorption peaks that indicate an increase in a component and positive peaks that indicate a decrease. It should be …
FIG. 4D. Moreover, unlike the fragile monolayer films produced by thermal CVD at 1000 ° C, each ~ 1 cm 2 LT-grown graphene sheet remained fully intact upon …
FIG. 4D. Moreover, unlike the fragile monolayer films produced by thermal CVD at 1000 ° C, each ~ 1 cm 2 LT-grown graphene sheet remained fully intact upon …
FIG. 4D. Moreover, unlike the fragile monolayer films produced by thermal CVD at 1000 ° C, each ~ 1 cm 2 LT-grown graphene sheet remained fully intact upon …
FIGS. 8J, 8L, 8N, and 8P were obtained from Raman spectroscopic studies of different areas of multiple samples fabricated under the same condition for the …
FIG. 10 B. In this alternative design, built-in strain in graphene nano-bubbles 1020 is achieved by transferring LT-graphene 1030 to a nano-engineered …
FIG. 11B, the px x-vs.- V g data (V g being the gate voltage, which is directly proportional to the two-dimensional carrier density n2D in the graphene sheet …
FIG. 12, for a graphene sheet 1210 suspended above a triangular hole ~ 200 nm on a side 1212, a gate voltage V g of 80 V could produce a cyclotron radius of ~ …
FIG. 13C is a table listing electron mobility data for nine different back-gated FET devices. DETAILED DESCRIPTION OF SPECIFIC EMBODIMENTS [0037] An approach …
— | 10–40 W | — |
Temperature | 2500–8000 K | — |
Thickness | 10–100 nm | — |
Thickness | 0–200 nm | — |
Thickness | 0–1000 nm | — |
Thickness | 0–10 nm | — |
Thickness | 0–2.2 nm | — |
Thickness | 0–2 nm | — |
Thickness | 0–3 nm | — |
Thickness | 0.01 nm | — |
Pressure | ≤ 50 mTorr | — |
Thickness | ≤ 0.01 nm | — |
Temperature | ≤ 20 K | — |
Thickness | ≥ 1 nm | — |
Duration | ≤ 5 minutes | — |
Thickness | ≥ 60000 cm | — |
carbon source
cyano radicals
CN
methane
CH₄
copper substrate
Cu
graphene on BN
boron nitride (BN)
BN
FIG. 2 is a simplified flowchart illustrating a method of producing graphene according to an embodiment of the present invention. The method includes placing a …
FIG. 3, the spectrum includes negative absorption peaks that indicate an increase in a component and positive peaks that indicate a decrease. It should be …
FIG. 4D. Moreover, unlike the fragile monolayer films produced by thermal CVD at 1000 ° C, each ~ 1 cm 2 LT-grown graphene sheet remained fully intact upon …
FIG. 4D. Moreover, unlike the fragile monolayer films produced by thermal CVD at 1000 ° C, each ~ 1 cm 2 LT-grown graphene sheet remained fully intact upon …
FIG. 4D. Moreover, unlike the fragile monolayer films produced by thermal CVD at 1000 ° C, each ~ 1 cm 2 LT-grown graphene sheet remained fully intact upon …
FIGS. 8J, 8L, 8N, and 8P were obtained from Raman spectroscopic studies of different areas of multiple samples fabricated under the same condition for the …
FIG. 10 B. In this alternative design, built-in strain in graphene nano-bubbles 1020 is achieved by transferring LT-graphene 1030 to a nano-engineered …
FIG. 11B, the px x-vs.- V g data (V g being the gate voltage, which is directly proportional to the two-dimensional carrier density n2D in the graphene sheet …
FIG. 12, for a graphene sheet 1210 suspended above a triangular hole ~ 200 nm on a side 1212, a gate voltage V g of 80 V could produce a cyclotron radius of ~ …
FIG. 13C is a table listing electron mobility data for nine different back-gated FET devices. DETAILED DESCRIPTION OF SPECIFIC EMBODIMENTS [0037] An approach …
— | 10–40 W | — |
Temperature | 2500–8000 K | — |
Thickness | 10–100 nm | — |
Thickness | 0–200 nm | — |
Thickness | 0–1000 nm | — |
Thickness | 0–10 nm | — |
Thickness | 0–2.2 nm | — |
Thickness | 0–2 nm | — |
Thickness | 0–3 nm | — |
Thickness | 0.01 nm | — |
Pressure | ≤ 50 mTorr | — |
Thickness | ≤ 0.01 nm | — |
Temperature | ≤ 20 K | — |
Thickness | ≥ 1 nm | — |
Duration | ≤ 5 minutes | — |
Thickness | ≥ 60000 cm | — |
carbon source
cyano radicals
CN
methane
CH₄
copper substrate
Cu
graphene on BN
boron nitride (BN)
BN
FIG. 2 is a simplified flowchart illustrating a method of producing graphene according to an embodiment of the present invention. The method includes placing a …
FIG. 3, the spectrum includes negative absorption peaks that indicate an increase in a component and positive peaks that indicate a decrease. It should be …
FIG. 4D. Moreover, unlike the fragile monolayer films produced by thermal CVD at 1000 ° C, each ~ 1 cm 2 LT-grown graphene sheet remained fully intact upon …
FIG. 4D. Moreover, unlike the fragile monolayer films produced by thermal CVD at 1000 ° C, each ~ 1 cm 2 LT-grown graphene sheet remained fully intact upon …
FIG. 4D. Moreover, unlike the fragile monolayer films produced by thermal CVD at 1000 ° C, each ~ 1 cm 2 LT-grown graphene sheet remained fully intact upon …
FIGS. 8J, 8L, 8N, and 8P were obtained from Raman spectroscopic studies of different areas of multiple samples fabricated under the same condition for the …
FIG. 10 B. In this alternative design, built-in strain in graphene nano-bubbles 1020 is achieved by transferring LT-graphene 1030 to a nano-engineered …
FIG. 11B, the px x-vs.- V g data (V g being the gate voltage, which is directly proportional to the two-dimensional carrier density n2D in the graphene sheet …
FIG. 12, for a graphene sheet 1210 suspended above a triangular hole ~ 200 nm on a side 1212, a gate voltage V g of 80 V could produce a cyclotron radius of ~ …
FIG. 13C is a table listing electron mobility data for nine different back-gated FET devices. DETAILED DESCRIPTION OF SPECIFIC EMBODIMENTS [0037] An approach …
— | 10–40 W | — |
Temperature | 2500–8000 K | — |
Thickness | 10–100 nm | — |
Thickness | 0–200 nm | — |
Thickness | 0–1000 nm | — |
Thickness | 0–10 nm | — |
Thickness | 0–2.2 nm | — |
Thickness | 0–2 nm | — |
Thickness | 0–3 nm | — |
Thickness | 0.01 nm | — |
Pressure | ≤ 50 mTorr | — |
Thickness | ≤ 0.01 nm | — |
Temperature | ≤ 20 K | — |
Thickness | ≥ 1 nm | — |
Duration | ≤ 5 minutes | — |
Thickness | ≥ 60000 cm | — |
carbon source
cyano radicals
CN
methane
CH₄
copper substrate
Cu
graphene on BN
boron nitride (BN)
BN
FIG. 2 is a simplified flowchart illustrating a method of producing graphene according to an embodiment of the present invention. The method includes placing a …
FIG. 3, the spectrum includes negative absorption peaks that indicate an increase in a component and positive peaks that indicate a decrease. It should be …
FIG. 4D. Moreover, unlike the fragile monolayer films produced by thermal CVD at 1000 ° C, each ~ 1 cm 2 LT-grown graphene sheet remained fully intact upon …
FIG. 4D. Moreover, unlike the fragile monolayer films produced by thermal CVD at 1000 ° C, each ~ 1 cm 2 LT-grown graphene sheet remained fully intact upon …
FIG. 4D. Moreover, unlike the fragile monolayer films produced by thermal CVD at 1000 ° C, each ~ 1 cm 2 LT-grown graphene sheet remained fully intact upon …
FIGS. 8J, 8L, 8N, and 8P were obtained from Raman spectroscopic studies of different areas of multiple samples fabricated under the same condition for the …
FIG. 10 B. In this alternative design, built-in strain in graphene nano-bubbles 1020 is achieved by transferring LT-graphene 1030 to a nano-engineered …
FIG. 11B, the px x-vs.- V g data (V g being the gate voltage, which is directly proportional to the two-dimensional carrier density n2D in the graphene sheet …
FIG. 12, for a graphene sheet 1210 suspended above a triangular hole ~ 200 nm on a side 1212, a gate voltage V g of 80 V could produce a cyclotron radius of ~ …
FIG. 13C is a table listing electron mobility data for nine different back-gated FET devices. DETAILED DESCRIPTION OF SPECIFIC EMBODIMENTS [0037] An approach …
— | 10–40 W | — |
Temperature | 2500–8000 K | — |
Thickness | 10–100 nm | — |
Thickness | 0–200 nm | — |
Thickness | 0–1000 nm | — |
Thickness | 0–10 nm | — |
Thickness | 0–2.2 nm | — |
Thickness | 0–2 nm | — |
Thickness | 0–3 nm | — |
Thickness | 0.01 nm | — |
Pressure | ≤ 50 mTorr | — |
Thickness | ≤ 0.01 nm | — |
Temperature | ≤ 20 K | — |
Thickness | ≥ 1 nm | — |
Duration | ≤ 5 minutes | — |
Thickness | ≥ 60000 cm | — |