Patent
US 9,722,110PLASMONIC GRAPHENE AND METHOD OF MAKING THE SAME
JUDY WU, GUOWEI XU, JIANWEI LIU
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,722,110Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 are scanning electron micrographs ("SEMs") of graphene transferred on a Si coating with 300 nm Si O 2 substrate and decorated with Ag NPs formed through …
FIG. 2(d) shows the simulated Q-values of Ag disk with 10 n m thickness and 40 nm diameter without graphene (curve with circles.) with 0.7 nm graphene layer …
FIG. 3 shows the simulated field distributions measured with monitors placed at different locations and directions. Pane (b) shows the simulation configuration, …
FIG. 4 shows the normal Raman and SERS spectra of the original (black) and plasmonic graphene measured using 633 nm laser excitation. The SERS spectra for the …
FIG. 5 shows the improved conductivity of 1-layer graphene decorated with NPs formed from 8 nm thick Ag as compared to the original CVD graphene. The inset …
FIG. 6 (panel a) shows the schematics of ionic liquid gated (top gate) graphene with plasmonic nanostructures on Si substrate capped with 90 nm SiO₂ (back …
FIG. 7 (panel a) shows the ID-VG curve of CVD graphene before and after Ag nanoparticle deposition; and (b) ID-V BG curves of reference sample of back-gated …
FIG. 8 (panel d) ionic-liquid top-gated graphene with Ag NPs. The insets show the device geometries. [0024] FIG 9 (panel a) shows the resonance Q-value as the …
FIG. 9(b) transmittance curves of graphene, plasmonic graphene with and without ionic liquid covered (left column), and I D change dependence on wavelength of …
FIG. 10 (panel a) shows the ID-t curves of ionic liquid gated plasmonic graphene measured at zero gate voltage and several different temperatures with light on …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for forming plasmonic graphene: providing a graphene sheet on a support substrate; forming a film of a plasmonic material on said graphene sheet; heating at 500 ° C or less for a time ranging from 5 to 200 minutes said graphene sheet with said film of plasmonic material to form plasmonic graphene comprising graphene with plasmonic nanostructures thereon.
The method of Claim 1 wherein said support substrate comprises a silicon dioxide or glass substrate.
The method of Claim 1 wherein said providing step comprises the steps of growing a graphene sheet on a copper substrate using chemical vapor deposition; spin-coating a polymethylmethacrylate layer onto said graphene sheet; removing said copper substrate by contacting said copper substrate with an iron chloride solution; transferring said graphene to a silicon dioxide substrate; and removing said polymethylmethacrylate layer.
The method of Claim 1 wherein said graphene sheet comprises 1 to 3 layers of graphene.
The method of Claim 1 wherein said plasmonic material is selected from the group consisting of silver, gold, copper, or mixtures thereof.
The method of Claim 1 wherein said film of plasmonic material has a thickness of about 4 to 10 nm.
The method of Claim 1 further comprising the step of cleaning said graphene sheet prior to said plasmonic film forming step. 2 DB04/0506274.0106/12970754.3 IS08 Serial No.: 13/657,161 Docket No.: 0506274-0106
The method of Claim 1 wherein said heating occurs at about 300 ° C or less for about 5 to 60 minutes.
The method of Claim 1 wherein said plasmonic material comprises silver and said plasmonic graphene comprises silver nanostructures on graphene. 10. The method of Claim 9 wherein said nanostructures have an average dimension of about 50 to 150 nm.
The method of Claim 1 wherein said plasmonic graphene has an electrical conductivity that is higher than a graphene sheet without said plasmonic material. 13. The method of Claim 1 wherein said plasmonic graphene exhibits a higher G peak and 2D peak compared to a graphene sheet without said plasmonic material. 14. The method of Claim 1 wherein said plasmonic graphene exhibits a red-shifted plasmonic resonance frequency compared to said plasmonic material on bare glass. 15. The method of Claim 1 wherein said plasmonic nanostructures are disk-like in shape.
The method of Claim 1 wherein said plasmonic material is an electrically conductive material.
A plasmonic graphene comprising a graphene sheet having a plurality of nanostructures thereon formed according to the method of Claim 1. 18. The plasmonic graphene of Claim 17 wherein said plasmonic material is selected from the group consisting of silver, gold, copper, or mixtures thereof. 3 DB04/0506274.0106/12970754.3 IS08 Serial No.: 13/657,161 Docket No.: 0506274-0106 19. A photovoltaic device having an infrared transparent electrode comprised of the plasmonic graphene of Claim 17. 20. A photodetector comprising the plasmon plasmonic graphene of Claim 17 and a gate electrode. 21. The photodetector of Claim 20 further comprising an electrolyte and/or ionic on said plasmonic graphene. 22. The method of Claim 1, wherein said heating occurs for 5 to 60 minutes.
The method of Claim 1 wherein said heating occurs at 400 ° C or less for 5 to 200 minutes.
Embodiments described in the patent, grouped by the materials and process steps they use.
3 materials2 process steps
Plasmonic graphene was fabricated by depositing silver films (thickness ~1–20 nm) onto CVD-grown graphene using electron-beam evaporation, followed by thermal treatment in H₂/Ar reducing gas to form silver nanostructures via thermally assisted self-assembly. Characterization was performed using Raman spectroscopy and visible optical spectroscopy with integrating sphere; FDTD simulation was used to understand graphene thickness effects on plasmonic behavior.
Layer stacks claimed or described, ordered top of device to substrate.
plasmonic graphene transparent conductor
photovoltaic device with infrared transparent electrode
photodetector with plasmonic graphene
Materials described outside the worked examples.
plasmonic graphene
silicon dioxide
SiO₂
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 are scanning electron micrographs ("SEMs") of graphene transferred on a Si coating with 300 nm Si O 2 substrate and decorated with Ag NPs formed through …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 14–16 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,722,110Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 are scanning electron micrographs ("SEMs") of graphene transferred on a Si coating with 300 nm Si O 2 substrate and decorated with Ag NPs formed through …
FIG. 2(d) shows the simulated Q-values of Ag disk with 10 n m thickness and 40 nm diameter without graphene (curve with circles.) with 0.7 nm graphene layer …
FIG. 3 shows the simulated field distributions measured with monitors placed at different locations and directions. Pane (b) shows the simulation configuration, …
FIG. 4 shows the normal Raman and SERS spectra of the original (black) and plasmonic graphene measured using 633 nm laser excitation. The SERS spectra for the …
FIG. 5 shows the improved conductivity of 1-layer graphene decorated with NPs formed from 8 nm thick Ag as compared to the original CVD graphene. The inset …
FIG. 6 (panel a) shows the schematics of ionic liquid gated (top gate) graphene with plasmonic nanostructures on Si substrate capped with 90 nm SiO₂ (back …
FIG. 7 (panel a) shows the ID-VG curve of CVD graphene before and after Ag nanoparticle deposition; and (b) ID-V BG curves of reference sample of back-gated …
FIG. 8 (panel d) ionic-liquid top-gated graphene with Ag NPs. The insets show the device geometries. [0024] FIG 9 (panel a) shows the resonance Q-value as the …
FIG. 9(b) transmittance curves of graphene, plasmonic graphene with and without ionic liquid covered (left column), and I D change dependence on wavelength of …
FIG. 10 (panel a) shows the ID-t curves of ionic liquid gated plasmonic graphene measured at zero gate voltage and several different temperatures with light on …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for forming plasmonic graphene: providing a graphene sheet on a support substrate; forming a film of a plasmonic material on said graphene sheet; heating at 500 ° C or less for a time ranging from 5 to 200 minutes said graphene sheet with said film of plasmonic material to form plasmonic graphene comprising graphene with plasmonic nanostructures thereon.
The method of Claim 1 wherein said support substrate comprises a silicon dioxide or glass substrate.
The method of Claim 1 wherein said providing step comprises the steps of growing a graphene sheet on a copper substrate using chemical vapor deposition; spin-coating a polymethylmethacrylate layer onto said graphene sheet; removing said copper substrate by contacting said copper substrate with an iron chloride solution; transferring said graphene to a silicon dioxide substrate; and removing said polymethylmethacrylate layer.
The method of Claim 1 wherein said graphene sheet comprises 1 to 3 layers of graphene.
The method of Claim 1 wherein said plasmonic material is selected from the group consisting of silver, gold, copper, or mixtures thereof.
The method of Claim 1 wherein said film of plasmonic material has a thickness of about 4 to 10 nm.
The method of Claim 1 further comprising the step of cleaning said graphene sheet prior to said plasmonic film forming step. 2 DB04/0506274.0106/12970754.3 IS08 Serial No.: 13/657,161 Docket No.: 0506274-0106
The method of Claim 1 wherein said heating occurs at about 300 ° C or less for about 5 to 60 minutes.
The method of Claim 1 wherein said plasmonic material comprises silver and said plasmonic graphene comprises silver nanostructures on graphene. 10. The method of Claim 9 wherein said nanostructures have an average dimension of about 50 to 150 nm.
The method of Claim 1 wherein said plasmonic graphene has an electrical conductivity that is higher than a graphene sheet without said plasmonic material. 13. The method of Claim 1 wherein said plasmonic graphene exhibits a higher G peak and 2D peak compared to a graphene sheet without said plasmonic material. 14. The method of Claim 1 wherein said plasmonic graphene exhibits a red-shifted plasmonic resonance frequency compared to said plasmonic material on bare glass. 15. The method of Claim 1 wherein said plasmonic nanostructures are disk-like in shape.
The method of Claim 1 wherein said plasmonic material is an electrically conductive material.
A plasmonic graphene comprising a graphene sheet having a plurality of nanostructures thereon formed according to the method of Claim 1. 18. The plasmonic graphene of Claim 17 wherein said plasmonic material is selected from the group consisting of silver, gold, copper, or mixtures thereof. 3 DB04/0506274.0106/12970754.3 IS08 Serial No.: 13/657,161 Docket No.: 0506274-0106 19. A photovoltaic device having an infrared transparent electrode comprised of the plasmonic graphene of Claim 17. 20. A photodetector comprising the plasmon plasmonic graphene of Claim 17 and a gate electrode. 21. The photodetector of Claim 20 further comprising an electrolyte and/or ionic on said plasmonic graphene. 22. The method of Claim 1, wherein said heating occurs for 5 to 60 minutes.
The method of Claim 1 wherein said heating occurs at 400 ° C or less for 5 to 200 minutes.
Embodiments described in the patent, grouped by the materials and process steps they use.
3 materials2 process steps
Plasmonic graphene was fabricated by depositing silver films (thickness ~1–20 nm) onto CVD-grown graphene using electron-beam evaporation, followed by thermal treatment in H₂/Ar reducing gas to form silver nanostructures via thermally assisted self-assembly. Characterization was performed using Raman spectroscopy and visible optical spectroscopy with integrating sphere; FDTD simulation was used to understand graphene thickness effects on plasmonic behavior.
Layer stacks claimed or described, ordered top of device to substrate.
plasmonic graphene transparent conductor
photovoltaic device with infrared transparent electrode
photodetector with plasmonic graphene
Materials described outside the worked examples.
plasmonic graphene
silicon dioxide
SiO₂
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 are scanning electron micrographs ("SEMs") of graphene transferred on a Si coating with 300 nm Si O 2 substrate and decorated with Ag NPs formed through …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 14–16 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,722,110Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 are scanning electron micrographs ("SEMs") of graphene transferred on a Si coating with 300 nm Si O 2 substrate and decorated with Ag NPs formed through …
FIG. 2(d) shows the simulated Q-values of Ag disk with 10 n m thickness and 40 nm diameter without graphene (curve with circles.) with 0.7 nm graphene layer …
FIG. 3 shows the simulated field distributions measured with monitors placed at different locations and directions. Pane (b) shows the simulation configuration, …
FIG. 4 shows the normal Raman and SERS spectra of the original (black) and plasmonic graphene measured using 633 nm laser excitation. The SERS spectra for the …
FIG. 5 shows the improved conductivity of 1-layer graphene decorated with NPs formed from 8 nm thick Ag as compared to the original CVD graphene. The inset …
FIG. 6 (panel a) shows the schematics of ionic liquid gated (top gate) graphene with plasmonic nanostructures on Si substrate capped with 90 nm SiO₂ (back …
FIG. 7 (panel a) shows the ID-VG curve of CVD graphene before and after Ag nanoparticle deposition; and (b) ID-V BG curves of reference sample of back-gated …
FIG. 8 (panel d) ionic-liquid top-gated graphene with Ag NPs. The insets show the device geometries. [0024] FIG 9 (panel a) shows the resonance Q-value as the …
FIG. 9(b) transmittance curves of graphene, plasmonic graphene with and without ionic liquid covered (left column), and I D change dependence on wavelength of …
FIG. 10 (panel a) shows the ID-t curves of ionic liquid gated plasmonic graphene measured at zero gate voltage and several different temperatures with light on …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for forming plasmonic graphene: providing a graphene sheet on a support substrate; forming a film of a plasmonic material on said graphene sheet; heating at 500 ° C or less for a time ranging from 5 to 200 minutes said graphene sheet with said film of plasmonic material to form plasmonic graphene comprising graphene with plasmonic nanostructures thereon.
The method of Claim 1 wherein said support substrate comprises a silicon dioxide or glass substrate.
The method of Claim 1 wherein said providing step comprises the steps of growing a graphene sheet on a copper substrate using chemical vapor deposition; spin-coating a polymethylmethacrylate layer onto said graphene sheet; removing said copper substrate by contacting said copper substrate with an iron chloride solution; transferring said graphene to a silicon dioxide substrate; and removing said polymethylmethacrylate layer.
The method of Claim 1 wherein said graphene sheet comprises 1 to 3 layers of graphene.
The method of Claim 1 wherein said plasmonic material is selected from the group consisting of silver, gold, copper, or mixtures thereof.
The method of Claim 1 wherein said film of plasmonic material has a thickness of about 4 to 10 nm.
The method of Claim 1 further comprising the step of cleaning said graphene sheet prior to said plasmonic film forming step. 2 DB04/0506274.0106/12970754.3 IS08 Serial No.: 13/657,161 Docket No.: 0506274-0106
The method of Claim 1 wherein said heating occurs at about 300 ° C or less for about 5 to 60 minutes.
The method of Claim 1 wherein said plasmonic material comprises silver and said plasmonic graphene comprises silver nanostructures on graphene. 10. The method of Claim 9 wherein said nanostructures have an average dimension of about 50 to 150 nm.
The method of Claim 1 wherein said plasmonic graphene has an electrical conductivity that is higher than a graphene sheet without said plasmonic material. 13. The method of Claim 1 wherein said plasmonic graphene exhibits a higher G peak and 2D peak compared to a graphene sheet without said plasmonic material. 14. The method of Claim 1 wherein said plasmonic graphene exhibits a red-shifted plasmonic resonance frequency compared to said plasmonic material on bare glass. 15. The method of Claim 1 wherein said plasmonic nanostructures are disk-like in shape.
The method of Claim 1 wherein said plasmonic material is an electrically conductive material.
A plasmonic graphene comprising a graphene sheet having a plurality of nanostructures thereon formed according to the method of Claim 1. 18. The plasmonic graphene of Claim 17 wherein said plasmonic material is selected from the group consisting of silver, gold, copper, or mixtures thereof. 3 DB04/0506274.0106/12970754.3 IS08 Serial No.: 13/657,161 Docket No.: 0506274-0106 19. A photovoltaic device having an infrared transparent electrode comprised of the plasmonic graphene of Claim 17. 20. A photodetector comprising the plasmon plasmonic graphene of Claim 17 and a gate electrode. 21. The photodetector of Claim 20 further comprising an electrolyte and/or ionic on said plasmonic graphene. 22. The method of Claim 1, wherein said heating occurs for 5 to 60 minutes.
The method of Claim 1 wherein said heating occurs at 400 ° C or less for 5 to 200 minutes.
Embodiments described in the patent, grouped by the materials and process steps they use.
3 materials2 process steps
Plasmonic graphene was fabricated by depositing silver films (thickness ~1–20 nm) onto CVD-grown graphene using electron-beam evaporation, followed by thermal treatment in H₂/Ar reducing gas to form silver nanostructures via thermally assisted self-assembly. Characterization was performed using Raman spectroscopy and visible optical spectroscopy with integrating sphere; FDTD simulation was used to understand graphene thickness effects on plasmonic behavior.
Layer stacks claimed or described, ordered top of device to substrate.
plasmonic graphene transparent conductor
photovoltaic device with infrared transparent electrode
photodetector with plasmonic graphene
Materials described outside the worked examples.
plasmonic graphene
silicon dioxide
SiO₂
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 are scanning electron micrographs ("SEMs") of graphene transferred on a Si coating with 300 nm Si O 2 substrate and decorated with Ag NPs formed through …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 14–16 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,722,110Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 are scanning electron micrographs ("SEMs") of graphene transferred on a Si coating with 300 nm Si O 2 substrate and decorated with Ag NPs formed through …
FIG. 2(d) shows the simulated Q-values of Ag disk with 10 n m thickness and 40 nm diameter without graphene (curve with circles.) with 0.7 nm graphene layer …
FIG. 3 shows the simulated field distributions measured with monitors placed at different locations and directions. Pane (b) shows the simulation configuration, …
FIG. 4 shows the normal Raman and SERS spectra of the original (black) and plasmonic graphene measured using 633 nm laser excitation. The SERS spectra for the …
FIG. 5 shows the improved conductivity of 1-layer graphene decorated with NPs formed from 8 nm thick Ag as compared to the original CVD graphene. The inset …
FIG. 6 (panel a) shows the schematics of ionic liquid gated (top gate) graphene with plasmonic nanostructures on Si substrate capped with 90 nm SiO₂ (back …
FIG. 7 (panel a) shows the ID-VG curve of CVD graphene before and after Ag nanoparticle deposition; and (b) ID-V BG curves of reference sample of back-gated …
FIG. 8 (panel d) ionic-liquid top-gated graphene with Ag NPs. The insets show the device geometries. [0024] FIG 9 (panel a) shows the resonance Q-value as the …
FIG. 9(b) transmittance curves of graphene, plasmonic graphene with and without ionic liquid covered (left column), and I D change dependence on wavelength of …
FIG. 10 (panel a) shows the ID-t curves of ionic liquid gated plasmonic graphene measured at zero gate voltage and several different temperatures with light on …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for forming plasmonic graphene: providing a graphene sheet on a support substrate; forming a film of a plasmonic material on said graphene sheet; heating at 500 ° C or less for a time ranging from 5 to 200 minutes said graphene sheet with said film of plasmonic material to form plasmonic graphene comprising graphene with plasmonic nanostructures thereon.
The method of Claim 1 wherein said support substrate comprises a silicon dioxide or glass substrate.
The method of Claim 1 wherein said providing step comprises the steps of growing a graphene sheet on a copper substrate using chemical vapor deposition; spin-coating a polymethylmethacrylate layer onto said graphene sheet; removing said copper substrate by contacting said copper substrate with an iron chloride solution; transferring said graphene to a silicon dioxide substrate; and removing said polymethylmethacrylate layer.
The method of Claim 1 wherein said graphene sheet comprises 1 to 3 layers of graphene.
The method of Claim 1 wherein said plasmonic material is selected from the group consisting of silver, gold, copper, or mixtures thereof.
The method of Claim 1 wherein said film of plasmonic material has a thickness of about 4 to 10 nm.
The method of Claim 1 further comprising the step of cleaning said graphene sheet prior to said plasmonic film forming step. 2 DB04/0506274.0106/12970754.3 IS08 Serial No.: 13/657,161 Docket No.: 0506274-0106
The method of Claim 1 wherein said heating occurs at about 300 ° C or less for about 5 to 60 minutes.
The method of Claim 1 wherein said plasmonic material comprises silver and said plasmonic graphene comprises silver nanostructures on graphene. 10. The method of Claim 9 wherein said nanostructures have an average dimension of about 50 to 150 nm.
The method of Claim 1 wherein said plasmonic graphene has an electrical conductivity that is higher than a graphene sheet without said plasmonic material. 13. The method of Claim 1 wherein said plasmonic graphene exhibits a higher G peak and 2D peak compared to a graphene sheet without said plasmonic material. 14. The method of Claim 1 wherein said plasmonic graphene exhibits a red-shifted plasmonic resonance frequency compared to said plasmonic material on bare glass. 15. The method of Claim 1 wherein said plasmonic nanostructures are disk-like in shape.
The method of Claim 1 wherein said plasmonic material is an electrically conductive material.
A plasmonic graphene comprising a graphene sheet having a plurality of nanostructures thereon formed according to the method of Claim 1. 18. The plasmonic graphene of Claim 17 wherein said plasmonic material is selected from the group consisting of silver, gold, copper, or mixtures thereof. 3 DB04/0506274.0106/12970754.3 IS08 Serial No.: 13/657,161 Docket No.: 0506274-0106 19. A photovoltaic device having an infrared transparent electrode comprised of the plasmonic graphene of Claim 17. 20. A photodetector comprising the plasmon plasmonic graphene of Claim 17 and a gate electrode. 21. The photodetector of Claim 20 further comprising an electrolyte and/or ionic on said plasmonic graphene. 22. The method of Claim 1, wherein said heating occurs for 5 to 60 minutes.
The method of Claim 1 wherein said heating occurs at 400 ° C or less for 5 to 200 minutes.
Embodiments described in the patent, grouped by the materials and process steps they use.
3 materials2 process steps
Plasmonic graphene was fabricated by depositing silver films (thickness ~1–20 nm) onto CVD-grown graphene using electron-beam evaporation, followed by thermal treatment in H₂/Ar reducing gas to form silver nanostructures via thermally assisted self-assembly. Characterization was performed using Raman spectroscopy and visible optical spectroscopy with integrating sphere; FDTD simulation was used to understand graphene thickness effects on plasmonic behavior.
Layer stacks claimed or described, ordered top of device to substrate.
plasmonic graphene transparent conductor
photovoltaic device with infrared transparent electrode
photodetector with plasmonic graphene
Materials described outside the worked examples.
plasmonic graphene
silicon dioxide
SiO₂
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 are scanning electron micrographs ("SEMs") of graphene transferred on a Si coating with 300 nm Si O 2 substrate and decorated with Ag NPs formed through …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 14–16 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
glass
polymethylmethacrylate
copper substrate
Cu
gold
Au
FIG. 1 are scanning electron micrographs ("SEMs") of graphene transferred on a Si coating with 300 nm Si O 2 substrate and decorated with Ag NPs formed through …
FIG. 2(d) shows the simulated Q-values of Ag disk with 10 n m thickness and 40 nm diameter without graphene (curve with circles.) with 0.7 nm graphene layer …
FIG. 4 shows the normal Raman and SERS spectra of the original (black) and plasmonic graphene measured using 633 nm laser excitation. The SERS spectra for the …
FIG. 7 (panel a) shows the ID-VG curve of CVD graphene before and after Ag nanoparticle deposition; and (b) ID-V BG curves of reference sample of back-gated …
FIG. 8 (panel d) ionic-liquid top-gated graphene with Ag NPs. The insets show the device geometries. [0024] FIG 9 (panel a) shows the resonance Q-value as the …
FIG. 8 (panel d) ionic-liquid top-gated graphene with Ag NPs. The insets show the device geometries. [0024] FIG 9 (panel a) shows the resonance Q-value as the …
FIG. 10 (panel a) shows the ID-t curves of ionic liquid gated plasmonic graphene measured at zero gate voltage and several different temperatures with light on …
| 1–200 nm |
| — |
Thickness | 1–300 nm | — |
Thickness | 50–150 nm | — |
Thickness | 4–14 nm | — |
Voltage | 20–20 V | — |
Thickness | 50–100 nm | — |
Thickness | 1–15 nm | — |
Thickness | 4–10 nm | — |
Thickness | 6–10 nm | — |
Thickness | 7–8 nm | — |
Duration | 5–200 minutes | — |
Temperature | 160–230 °C | — |
Duration | 20–40 minutes | — |
Thickness | 1–100 nm | — |
Thickness | ≤ 10 nm | — |
Duration | 5–60 minutes | — |
glass
polymethylmethacrylate
copper substrate
Cu
gold
Au
FIG. 1 are scanning electron micrographs ("SEMs") of graphene transferred on a Si coating with 300 nm Si O 2 substrate and decorated with Ag NPs formed through …
FIG. 2(d) shows the simulated Q-values of Ag disk with 10 n m thickness and 40 nm diameter without graphene (curve with circles.) with 0.7 nm graphene layer …
FIG. 4 shows the normal Raman and SERS spectra of the original (black) and plasmonic graphene measured using 633 nm laser excitation. The SERS spectra for the …
FIG. 7 (panel a) shows the ID-VG curve of CVD graphene before and after Ag nanoparticle deposition; and (b) ID-V BG curves of reference sample of back-gated …
FIG. 8 (panel d) ionic-liquid top-gated graphene with Ag NPs. The insets show the device geometries. [0024] FIG 9 (panel a) shows the resonance Q-value as the …
FIG. 8 (panel d) ionic-liquid top-gated graphene with Ag NPs. The insets show the device geometries. [0024] FIG 9 (panel a) shows the resonance Q-value as the …
FIG. 10 (panel a) shows the ID-t curves of ionic liquid gated plasmonic graphene measured at zero gate voltage and several different temperatures with light on …
| 1–200 nm |
| — |
Thickness | 1–300 nm | — |
Thickness | 50–150 nm | — |
Thickness | 4–14 nm | — |
Voltage | 20–20 V | — |
Thickness | 50–100 nm | — |
Thickness | 1–15 nm | — |
Thickness | 4–10 nm | — |
Thickness | 6–10 nm | — |
Thickness | 7–8 nm | — |
Duration | 5–200 minutes | — |
Temperature | 160–230 °C | — |
Duration | 20–40 minutes | — |
Thickness | 1–100 nm | — |
Thickness | ≤ 10 nm | — |
Duration | 5–60 minutes | — |
glass
polymethylmethacrylate
copper substrate
Cu
gold
Au
FIG. 1 are scanning electron micrographs ("SEMs") of graphene transferred on a Si coating with 300 nm Si O 2 substrate and decorated with Ag NPs formed through …
FIG. 2(d) shows the simulated Q-values of Ag disk with 10 n m thickness and 40 nm diameter without graphene (curve with circles.) with 0.7 nm graphene layer …
FIG. 4 shows the normal Raman and SERS spectra of the original (black) and plasmonic graphene measured using 633 nm laser excitation. The SERS spectra for the …
FIG. 7 (panel a) shows the ID-VG curve of CVD graphene before and after Ag nanoparticle deposition; and (b) ID-V BG curves of reference sample of back-gated …
FIG. 8 (panel d) ionic-liquid top-gated graphene with Ag NPs. The insets show the device geometries. [0024] FIG 9 (panel a) shows the resonance Q-value as the …
FIG. 8 (panel d) ionic-liquid top-gated graphene with Ag NPs. The insets show the device geometries. [0024] FIG 9 (panel a) shows the resonance Q-value as the …
FIG. 10 (panel a) shows the ID-t curves of ionic liquid gated plasmonic graphene measured at zero gate voltage and several different temperatures with light on …
| 1–200 nm |
| — |
Thickness | 1–300 nm | — |
Thickness | 50–150 nm | — |
Thickness | 4–14 nm | — |
Voltage | 20–20 V | — |
Thickness | 50–100 nm | — |
Thickness | 1–15 nm | — |
Thickness | 4–10 nm | — |
Thickness | 6–10 nm | — |
Thickness | 7–8 nm | — |
Duration | 5–200 minutes | — |
Temperature | 160–230 °C | — |
Duration | 20–40 minutes | — |
Thickness | 1–100 nm | — |
Thickness | ≤ 10 nm | — |
Duration | 5–60 minutes | — |
glass
polymethylmethacrylate
copper substrate
Cu
gold
Au
FIG. 1 are scanning electron micrographs ("SEMs") of graphene transferred on a Si coating with 300 nm Si O 2 substrate and decorated with Ag NPs formed through …
FIG. 2(d) shows the simulated Q-values of Ag disk with 10 n m thickness and 40 nm diameter without graphene (curve with circles.) with 0.7 nm graphene layer …
FIG. 4 shows the normal Raman and SERS spectra of the original (black) and plasmonic graphene measured using 633 nm laser excitation. The SERS spectra for the …
FIG. 7 (panel a) shows the ID-VG curve of CVD graphene before and after Ag nanoparticle deposition; and (b) ID-V BG curves of reference sample of back-gated …
FIG. 8 (panel d) ionic-liquid top-gated graphene with Ag NPs. The insets show the device geometries. [0024] FIG 9 (panel a) shows the resonance Q-value as the …
FIG. 8 (panel d) ionic-liquid top-gated graphene with Ag NPs. The insets show the device geometries. [0024] FIG 9 (panel a) shows the resonance Q-value as the …
FIG. 10 (panel a) shows the ID-t curves of ionic liquid gated plasmonic graphene measured at zero gate voltage and several different temperatures with light on …
| 1–200 nm |
| — |
Thickness | 1–300 nm | — |
Thickness | 50–150 nm | — |
Thickness | 4–14 nm | — |
Voltage | 20–20 V | — |
Thickness | 50–100 nm | — |
Thickness | 1–15 nm | — |
Thickness | 4–10 nm | — |
Thickness | 6–10 nm | — |
Thickness | 7–8 nm | — |
Duration | 5–200 minutes | — |
Temperature | 160–230 °C | — |
Duration | 20–40 minutes | — |
Thickness | 1–100 nm | — |
Thickness | ≤ 10 nm | — |
Duration | 5–60 minutes | — |