Patent
US 10,566,537A CARBON NANOTUBE-GRAPHENE HYBRID TRANSPARENT CONDUCTOR AND FIELD EFFECT TRANSISTOR
Ageeth A. Bol
US
Copyright © 2026 Matter42. All rights reserved.
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US 10,566,537Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a diagram illustrating an example schematic of the carbon nanotube- graphene composite, according to an embodiment of the present invention. By way …
FIG. 2 depicts a rectangular 2D lattice of resistors 202 with a corresponding sheet resistance depiction 204, and a perturbed 2D lattice 206 with a …
FIG. 3 depicts a comparison of CNT-graphene hybrid with CNT films and graphene with respect to transmittance and sheet resistance data. It is shown through this …
FIG. 4 includes graphs illustrating transmittance and sheet resistance data, according to an embodiment of the present invention. By way of illustration, graph …
FIG. 5 is an example scanning electron microscope image of a carbon nanotube (CNT)-hybrid film, according to an embodiment of the present invention; YO …
FIG. 6 is a flow diagram illustrating techniques for forming a cleaned nanotube- graphene hybrid film, according to an embodiment of the present invention. Step …
FIGS. 7 -10. Metal portions 162 and 164, each having a thickness from about 15 nm to about 300 nm, form the FET source and drain. Metals such as Pd, Ti, W, Au, …
FIG. 8, a metal 160, having a thickness ranging from about 15 nm to about 50 nm, is deposited on the resist pattern and over portions of the carbon nanotube- …
FIG. 9, the metal portions 162 and 164 remaining on the carbon nanotube-graphene hybrid 140 form the FET source and drain. In this embodiment, the source and …
FIG. 10 illustrates the doping molecules bonding to the carbon nanotube-graphene hybrid 140. The doped portion of the carbon nanotube-graphene hybrid 140 …
FIG. 11 illustrates another embodiment of forming a carbon nanotube-graphene hybrid FET, or more generally, a FET with a channel comprising a nano-component …
FIG. 12. As an example, a dilute hydrofluoric acid (HF) such as 100:1 HF can be used as an etchant for LTO. YO R₉₂₀₁₁₀₄₉₀US₂ 13 Additionally, the device is …
FIGS. 13 -15 illustrate steps in another embodiment of forming 10 a carbon nanotube-graphene hybrid FET, or more generally, a FET with a channel comprising a …
FIG. 14 illustrates a step in another embodiment of forming a CNFET, according to an embodiment of the present invention;
FIG. 15, metal portions 162, 164 YO R₉₂₀₁₁₀₄₉₀U S 2 14 remaining after resist liftoff form the source and drain of the FET. The process of
FIG. 16 is a flow diagram illustrating techniques for forming a nanotube-graphene hybrid film substrate, according to an embodiment of the present invention. …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(Current ly Amended) A nanotu be-g rap hc ne h y bri d fil m, co mprising: a q uartz substrate; a d oped nanotube film deposited over the quartz substrate to produce a uni f orm la y er of nanotu be fi lm devoid of impurities on a surface of the uniform layer of nanotube film no t contacting the quartz substrate, wherein t he un iform layer of nanotube film comprises e pen ta cene molecules, and wherein the doped nanotu be fi lm comprises a nanotube film doped with a butanol solution; a self-assembled mono l ayer of ami n e t ermirate d groups positioned between the q uartz substrate and the doped nanotube film, thereby increasing nanotube adhesion on the quartz substrate, wherein the self-assembled mono lay er of a min e terminated groups comprise monolayers of 3-Aminopropyl triethoxy silane; and graphene deposited over the surface of the urni form lay e r of nanotube film that is devoid of impurities to produce a nanotube-graphene hybrid film, wherein the graphene comprises solution- suspended gr a phene oxide flakes doped with sul fu ric acid. Currently amended
(Origin al) The hybrid film of claim 1, wher ein the nanotube-graphene hybrid film is used as a coating for a transparent co nduct or. Original
The hybrid fil m of claim 1, wherein the layer of nanotub e fil m further comprises a layer of carbon nanotube film. Previously presented
The hybrid fil m of claim 1, wherein the nanotube-graphene hybrid film comprises a desired transparency. Original
(Origin al) The hybrid film of claim 1, wherein the nanotube-graphene hybrid film comprises a nanotube-graphene hybrid film removed of impurities from a surface thereof. Original
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
nanotube-graphene hybrid film
transparent conductor
Materials described outside the worked examples.
quartz substrate
doped nanotube film
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 depicts a rectangular 2D lattice of resistors 202 with a corresponding sheet resistance depiction 204, and a perturbed 2D lattice 206 with a …
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
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US 10,566,537Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a diagram illustrating an example schematic of the carbon nanotube- graphene composite, according to an embodiment of the present invention. By way …
FIG. 2 depicts a rectangular 2D lattice of resistors 202 with a corresponding sheet resistance depiction 204, and a perturbed 2D lattice 206 with a …
FIG. 3 depicts a comparison of CNT-graphene hybrid with CNT films and graphene with respect to transmittance and sheet resistance data. It is shown through this …
FIG. 4 includes graphs illustrating transmittance and sheet resistance data, according to an embodiment of the present invention. By way of illustration, graph …
FIG. 5 is an example scanning electron microscope image of a carbon nanotube (CNT)-hybrid film, according to an embodiment of the present invention; YO …
FIG. 6 is a flow diagram illustrating techniques for forming a cleaned nanotube- graphene hybrid film, according to an embodiment of the present invention. Step …
FIGS. 7 -10. Metal portions 162 and 164, each having a thickness from about 15 nm to about 300 nm, form the FET source and drain. Metals such as Pd, Ti, W, Au, …
FIG. 8, a metal 160, having a thickness ranging from about 15 nm to about 50 nm, is deposited on the resist pattern and over portions of the carbon nanotube- …
FIG. 9, the metal portions 162 and 164 remaining on the carbon nanotube-graphene hybrid 140 form the FET source and drain. In this embodiment, the source and …
FIG. 10 illustrates the doping molecules bonding to the carbon nanotube-graphene hybrid 140. The doped portion of the carbon nanotube-graphene hybrid 140 …
FIG. 11 illustrates another embodiment of forming a carbon nanotube-graphene hybrid FET, or more generally, a FET with a channel comprising a nano-component …
FIG. 12. As an example, a dilute hydrofluoric acid (HF) such as 100:1 HF can be used as an etchant for LTO. YO R₉₂₀₁₁₀₄₉₀US₂ 13 Additionally, the device is …
FIGS. 13 -15 illustrate steps in another embodiment of forming 10 a carbon nanotube-graphene hybrid FET, or more generally, a FET with a channel comprising a …
FIG. 14 illustrates a step in another embodiment of forming a CNFET, according to an embodiment of the present invention;
FIG. 15, metal portions 162, 164 YO R₉₂₀₁₁₀₄₉₀U S 2 14 remaining after resist liftoff form the source and drain of the FET. The process of
FIG. 16 is a flow diagram illustrating techniques for forming a nanotube-graphene hybrid film substrate, according to an embodiment of the present invention. …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(Current ly Amended) A nanotu be-g rap hc ne h y bri d fil m, co mprising: a q uartz substrate; a d oped nanotube film deposited over the quartz substrate to produce a uni f orm la y er of nanotu be fi lm devoid of impurities on a surface of the uniform layer of nanotube film no t contacting the quartz substrate, wherein t he un iform layer of nanotube film comprises e pen ta cene molecules, and wherein the doped nanotu be fi lm comprises a nanotube film doped with a butanol solution; a self-assembled mono l ayer of ami n e t ermirate d groups positioned between the q uartz substrate and the doped nanotube film, thereby increasing nanotube adhesion on the quartz substrate, wherein the self-assembled mono lay er of a min e terminated groups comprise monolayers of 3-Aminopropyl triethoxy silane; and graphene deposited over the surface of the urni form lay e r of nanotube film that is devoid of impurities to produce a nanotube-graphene hybrid film, wherein the graphene comprises solution- suspended gr a phene oxide flakes doped with sul fu ric acid. Currently amended
(Origin al) The hybrid film of claim 1, wher ein the nanotube-graphene hybrid film is used as a coating for a transparent co nduct or. Original
The hybrid fil m of claim 1, wherein the layer of nanotub e fil m further comprises a layer of carbon nanotube film. Previously presented
The hybrid fil m of claim 1, wherein the nanotube-graphene hybrid film comprises a desired transparency. Original
(Origin al) The hybrid film of claim 1, wherein the nanotube-graphene hybrid film comprises a nanotube-graphene hybrid film removed of impurities from a surface thereof. Original
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
nanotube-graphene hybrid film
transparent conductor
Materials described outside the worked examples.
quartz substrate
doped nanotube film
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 depicts a rectangular 2D lattice of resistors 202 with a corresponding sheet resistance depiction 204, and a perturbed 2D lattice 206 with a …
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,566,537Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a diagram illustrating an example schematic of the carbon nanotube- graphene composite, according to an embodiment of the present invention. By way …
FIG. 2 depicts a rectangular 2D lattice of resistors 202 with a corresponding sheet resistance depiction 204, and a perturbed 2D lattice 206 with a …
FIG. 3 depicts a comparison of CNT-graphene hybrid with CNT films and graphene with respect to transmittance and sheet resistance data. It is shown through this …
FIG. 4 includes graphs illustrating transmittance and sheet resistance data, according to an embodiment of the present invention. By way of illustration, graph …
FIG. 5 is an example scanning electron microscope image of a carbon nanotube (CNT)-hybrid film, according to an embodiment of the present invention; YO …
FIG. 6 is a flow diagram illustrating techniques for forming a cleaned nanotube- graphene hybrid film, according to an embodiment of the present invention. Step …
FIGS. 7 -10. Metal portions 162 and 164, each having a thickness from about 15 nm to about 300 nm, form the FET source and drain. Metals such as Pd, Ti, W, Au, …
FIG. 8, a metal 160, having a thickness ranging from about 15 nm to about 50 nm, is deposited on the resist pattern and over portions of the carbon nanotube- …
FIG. 9, the metal portions 162 and 164 remaining on the carbon nanotube-graphene hybrid 140 form the FET source and drain. In this embodiment, the source and …
FIG. 10 illustrates the doping molecules bonding to the carbon nanotube-graphene hybrid 140. The doped portion of the carbon nanotube-graphene hybrid 140 …
FIG. 11 illustrates another embodiment of forming a carbon nanotube-graphene hybrid FET, or more generally, a FET with a channel comprising a nano-component …
FIG. 12. As an example, a dilute hydrofluoric acid (HF) such as 100:1 HF can be used as an etchant for LTO. YO R₉₂₀₁₁₀₄₉₀US₂ 13 Additionally, the device is …
FIGS. 13 -15 illustrate steps in another embodiment of forming 10 a carbon nanotube-graphene hybrid FET, or more generally, a FET with a channel comprising a …
FIG. 14 illustrates a step in another embodiment of forming a CNFET, according to an embodiment of the present invention;
FIG. 15, metal portions 162, 164 YO R₉₂₀₁₁₀₄₉₀U S 2 14 remaining after resist liftoff form the source and drain of the FET. The process of
FIG. 16 is a flow diagram illustrating techniques for forming a nanotube-graphene hybrid film substrate, according to an embodiment of the present invention. …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(Current ly Amended) A nanotu be-g rap hc ne h y bri d fil m, co mprising: a q uartz substrate; a d oped nanotube film deposited over the quartz substrate to produce a uni f orm la y er of nanotu be fi lm devoid of impurities on a surface of the uniform layer of nanotube film no t contacting the quartz substrate, wherein t he un iform layer of nanotube film comprises e pen ta cene molecules, and wherein the doped nanotu be fi lm comprises a nanotube film doped with a butanol solution; a self-assembled mono l ayer of ami n e t ermirate d groups positioned between the q uartz substrate and the doped nanotube film, thereby increasing nanotube adhesion on the quartz substrate, wherein the self-assembled mono lay er of a min e terminated groups comprise monolayers of 3-Aminopropyl triethoxy silane; and graphene deposited over the surface of the urni form lay e r of nanotube film that is devoid of impurities to produce a nanotube-graphene hybrid film, wherein the graphene comprises solution- suspended gr a phene oxide flakes doped with sul fu ric acid. Currently amended
(Origin al) The hybrid film of claim 1, wher ein the nanotube-graphene hybrid film is used as a coating for a transparent co nduct or. Original
The hybrid fil m of claim 1, wherein the layer of nanotub e fil m further comprises a layer of carbon nanotube film. Previously presented
The hybrid fil m of claim 1, wherein the nanotube-graphene hybrid film comprises a desired transparency. Original
(Origin al) The hybrid film of claim 1, wherein the nanotube-graphene hybrid film comprises a nanotube-graphene hybrid film removed of impurities from a surface thereof. Original
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
nanotube-graphene hybrid film
transparent conductor
Materials described outside the worked examples.
quartz substrate
doped nanotube film
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 depicts a rectangular 2D lattice of resistors 202 with a corresponding sheet resistance depiction 204, and a perturbed 2D lattice 206 with a …
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,566,537Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a diagram illustrating an example schematic of the carbon nanotube- graphene composite, according to an embodiment of the present invention. By way …
FIG. 2 depicts a rectangular 2D lattice of resistors 202 with a corresponding sheet resistance depiction 204, and a perturbed 2D lattice 206 with a …
FIG. 3 depicts a comparison of CNT-graphene hybrid with CNT films and graphene with respect to transmittance and sheet resistance data. It is shown through this …
FIG. 4 includes graphs illustrating transmittance and sheet resistance data, according to an embodiment of the present invention. By way of illustration, graph …
FIG. 5 is an example scanning electron microscope image of a carbon nanotube (CNT)-hybrid film, according to an embodiment of the present invention; YO …
FIG. 6 is a flow diagram illustrating techniques for forming a cleaned nanotube- graphene hybrid film, according to an embodiment of the present invention. Step …
FIGS. 7 -10. Metal portions 162 and 164, each having a thickness from about 15 nm to about 300 nm, form the FET source and drain. Metals such as Pd, Ti, W, Au, …
FIG. 8, a metal 160, having a thickness ranging from about 15 nm to about 50 nm, is deposited on the resist pattern and over portions of the carbon nanotube- …
FIG. 9, the metal portions 162 and 164 remaining on the carbon nanotube-graphene hybrid 140 form the FET source and drain. In this embodiment, the source and …
FIG. 10 illustrates the doping molecules bonding to the carbon nanotube-graphene hybrid 140. The doped portion of the carbon nanotube-graphene hybrid 140 …
FIG. 11 illustrates another embodiment of forming a carbon nanotube-graphene hybrid FET, or more generally, a FET with a channel comprising a nano-component …
FIG. 12. As an example, a dilute hydrofluoric acid (HF) such as 100:1 HF can be used as an etchant for LTO. YO R₉₂₀₁₁₀₄₉₀US₂ 13 Additionally, the device is …
FIGS. 13 -15 illustrate steps in another embodiment of forming 10 a carbon nanotube-graphene hybrid FET, or more generally, a FET with a channel comprising a …
FIG. 14 illustrates a step in another embodiment of forming a CNFET, according to an embodiment of the present invention;
FIG. 15, metal portions 162, 164 YO R₉₂₀₁₁₀₄₉₀U S 2 14 remaining after resist liftoff form the source and drain of the FET. The process of
FIG. 16 is a flow diagram illustrating techniques for forming a nanotube-graphene hybrid film substrate, according to an embodiment of the present invention. …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(Current ly Amended) A nanotu be-g rap hc ne h y bri d fil m, co mprising: a q uartz substrate; a d oped nanotube film deposited over the quartz substrate to produce a uni f orm la y er of nanotu be fi lm devoid of impurities on a surface of the uniform layer of nanotube film no t contacting the quartz substrate, wherein t he un iform layer of nanotube film comprises e pen ta cene molecules, and wherein the doped nanotu be fi lm comprises a nanotube film doped with a butanol solution; a self-assembled mono l ayer of ami n e t ermirate d groups positioned between the q uartz substrate and the doped nanotube film, thereby increasing nanotube adhesion on the quartz substrate, wherein the self-assembled mono lay er of a min e terminated groups comprise monolayers of 3-Aminopropyl triethoxy silane; and graphene deposited over the surface of the urni form lay e r of nanotube film that is devoid of impurities to produce a nanotube-graphene hybrid film, wherein the graphene comprises solution- suspended gr a phene oxide flakes doped with sul fu ric acid. Currently amended
(Origin al) The hybrid film of claim 1, wher ein the nanotube-graphene hybrid film is used as a coating for a transparent co nduct or. Original
The hybrid fil m of claim 1, wherein the layer of nanotub e fil m further comprises a layer of carbon nanotube film. Previously presented
The hybrid fil m of claim 1, wherein the nanotube-graphene hybrid film comprises a desired transparency. Original
(Origin al) The hybrid film of claim 1, wherein the nanotube-graphene hybrid film comprises a nanotube-graphene hybrid film removed of impurities from a surface thereof. Original
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
nanotube-graphene hybrid film
transparent conductor
Materials described outside the worked examples.
quartz substrate
doped nanotube film
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 depicts a rectangular 2D lattice of resistors 202 with a corresponding sheet resistance depiction 204, and a perturbed 2D lattice 206 with a …
Related documents with shared materials, methods, properties, or citations.
pentacene
C₂₂H₁₄
butanol solution
self-assembled monolayer of 3-Aminopropyltriethoxysilane
solution-suspended graphene oxide flakes doped with sulfuric acid
carbon nanotube film
FIG. 3 depicts a comparison of CNT-graphene hybrid with CNT films and graphene with respect to transmittance and sheet resistance data. It is shown through this …
FIG. 4 includes graphs illustrating transmittance and sheet resistance data, according to an embodiment of the present invention. By way of illustration, graph …
FIG. 5 is an example scanning electron microscope image of a carbon nanotube (CNT)-hybrid film, according to an embodiment of the present invention; YO …
FIG. 6 is a flow diagram illustrating techniques for forming a cleaned nanotube- graphene hybrid film, according to an embodiment of the present invention. Step …
FIG. 6 is a flow diagram illustrating techniques for forming a cleaned nanotube- graphene hybrid film, according to an embodiment of the present invention. Step …
FIGS. 7 -10. Metal portions 162 and 164, each having a thickness from about 15 nm to about 300 nm, form the FET source and drain. Metals such as Pd, Ti, W, Au, …
FIGS. 7 -10. Metal portions 162 and 164, each having a thickness from about 15 nm to about 300 nm, form the FET source and drain. Metals such as Pd, Ti, W, Au, …
FIG. 8, a metal 160, having a thickness ranging from about 15 nm to about 50 nm, is deposited on the resist pattern and over portions of the carbon nanotube- …
FIG. 8, a metal 160, having a thickness ranging from about 15 nm to about 50 nm, is deposited on the resist pattern and over portions of the carbon nanotube- …
FIG. 9, the metal portions 162 and 164 remaining on the carbon nanotube-graphene hybrid 140 form the FET source and drain. In this embodiment, the source and …
FIG. 10 illustrates the doping molecules bonding to the carbon nanotube-graphene hybrid 140. The doped portion of the carbon nanotube-graphene hybrid 140 …
FIG. 11 illustrates another embodiment of forming a carbon nanotube-graphene hybrid FET, or more generally, a FET with a channel comprising a nano-component …
FIG. 12. As an example, a dilute hydrofluoric acid (HF) such as 100:1 HF can be used as an etchant for LTO. YO R₉₂₀₁₁₀₄₉₀US₂ 13 Additionally, the device is …
FIGS. 13 -15 illustrate steps in another embodiment of forming 10 a carbon nanotube-graphene hybrid FET, or more generally, a FET with a channel comprising a …
FIG. 15, metal portions 162, 164 YO R₉₂₀₁₁₀₄₉₀U S 2 14 remaining after resist liftoff form the source and drain of the FET. The process of
FIG. 16 is a flow diagram illustrating techniques for forming a nanotube-graphene hybrid film substrate, according to an embodiment of the present invention. …
pentacene
C₂₂H₁₄
butanol solution
self-assembled monolayer of 3-Aminopropyltriethoxysilane
solution-suspended graphene oxide flakes doped with sulfuric acid
carbon nanotube film
FIG. 3 depicts a comparison of CNT-graphene hybrid with CNT films and graphene with respect to transmittance and sheet resistance data. It is shown through this …
FIG. 4 includes graphs illustrating transmittance and sheet resistance data, according to an embodiment of the present invention. By way of illustration, graph …
FIG. 5 is an example scanning electron microscope image of a carbon nanotube (CNT)-hybrid film, according to an embodiment of the present invention; YO …
FIG. 6 is a flow diagram illustrating techniques for forming a cleaned nanotube- graphene hybrid film, according to an embodiment of the present invention. Step …
FIG. 6 is a flow diagram illustrating techniques for forming a cleaned nanotube- graphene hybrid film, according to an embodiment of the present invention. Step …
FIGS. 7 -10. Metal portions 162 and 164, each having a thickness from about 15 nm to about 300 nm, form the FET source and drain. Metals such as Pd, Ti, W, Au, …
FIGS. 7 -10. Metal portions 162 and 164, each having a thickness from about 15 nm to about 300 nm, form the FET source and drain. Metals such as Pd, Ti, W, Au, …
FIG. 8, a metal 160, having a thickness ranging from about 15 nm to about 50 nm, is deposited on the resist pattern and over portions of the carbon nanotube- …
FIG. 8, a metal 160, having a thickness ranging from about 15 nm to about 50 nm, is deposited on the resist pattern and over portions of the carbon nanotube- …
FIG. 9, the metal portions 162 and 164 remaining on the carbon nanotube-graphene hybrid 140 form the FET source and drain. In this embodiment, the source and …
FIG. 10 illustrates the doping molecules bonding to the carbon nanotube-graphene hybrid 140. The doped portion of the carbon nanotube-graphene hybrid 140 …
FIG. 11 illustrates another embodiment of forming a carbon nanotube-graphene hybrid FET, or more generally, a FET with a channel comprising a nano-component …
FIG. 12. As an example, a dilute hydrofluoric acid (HF) such as 100:1 HF can be used as an etchant for LTO. YO R₉₂₀₁₁₀₄₉₀US₂ 13 Additionally, the device is …
FIGS. 13 -15 illustrate steps in another embodiment of forming 10 a carbon nanotube-graphene hybrid FET, or more generally, a FET with a channel comprising a …
FIG. 15, metal portions 162, 164 YO R₉₂₀₁₁₀₄₉₀U S 2 14 remaining after resist liftoff form the source and drain of the FET. The process of
FIG. 16 is a flow diagram illustrating techniques for forming a nanotube-graphene hybrid film substrate, according to an embodiment of the present invention. …
pentacene
C₂₂H₁₄
butanol solution
self-assembled monolayer of 3-Aminopropyltriethoxysilane
solution-suspended graphene oxide flakes doped with sulfuric acid
carbon nanotube film
FIG. 3 depicts a comparison of CNT-graphene hybrid with CNT films and graphene with respect to transmittance and sheet resistance data. It is shown through this …
FIG. 4 includes graphs illustrating transmittance and sheet resistance data, according to an embodiment of the present invention. By way of illustration, graph …
FIG. 5 is an example scanning electron microscope image of a carbon nanotube (CNT)-hybrid film, according to an embodiment of the present invention; YO …
FIG. 6 is a flow diagram illustrating techniques for forming a cleaned nanotube- graphene hybrid film, according to an embodiment of the present invention. Step …
FIG. 6 is a flow diagram illustrating techniques for forming a cleaned nanotube- graphene hybrid film, according to an embodiment of the present invention. Step …
FIGS. 7 -10. Metal portions 162 and 164, each having a thickness from about 15 nm to about 300 nm, form the FET source and drain. Metals such as Pd, Ti, W, Au, …
FIGS. 7 -10. Metal portions 162 and 164, each having a thickness from about 15 nm to about 300 nm, form the FET source and drain. Metals such as Pd, Ti, W, Au, …
FIG. 8, a metal 160, having a thickness ranging from about 15 nm to about 50 nm, is deposited on the resist pattern and over portions of the carbon nanotube- …
FIG. 8, a metal 160, having a thickness ranging from about 15 nm to about 50 nm, is deposited on the resist pattern and over portions of the carbon nanotube- …
FIG. 9, the metal portions 162 and 164 remaining on the carbon nanotube-graphene hybrid 140 form the FET source and drain. In this embodiment, the source and …
FIG. 10 illustrates the doping molecules bonding to the carbon nanotube-graphene hybrid 140. The doped portion of the carbon nanotube-graphene hybrid 140 …
FIG. 11 illustrates another embodiment of forming a carbon nanotube-graphene hybrid FET, or more generally, a FET with a channel comprising a nano-component …
FIG. 12. As an example, a dilute hydrofluoric acid (HF) such as 100:1 HF can be used as an etchant for LTO. YO R₉₂₀₁₁₀₄₉₀US₂ 13 Additionally, the device is …
FIGS. 13 -15 illustrate steps in another embodiment of forming 10 a carbon nanotube-graphene hybrid FET, or more generally, a FET with a channel comprising a …
FIG. 15, metal portions 162, 164 YO R₉₂₀₁₁₀₄₉₀U S 2 14 remaining after resist liftoff form the source and drain of the FET. The process of
FIG. 16 is a flow diagram illustrating techniques for forming a nanotube-graphene hybrid film substrate, according to an embodiment of the present invention. …
pentacene
C₂₂H₁₄
butanol solution
self-assembled monolayer of 3-Aminopropyltriethoxysilane
solution-suspended graphene oxide flakes doped with sulfuric acid
carbon nanotube film
FIG. 3 depicts a comparison of CNT-graphene hybrid with CNT films and graphene with respect to transmittance and sheet resistance data. It is shown through this …
FIG. 4 includes graphs illustrating transmittance and sheet resistance data, according to an embodiment of the present invention. By way of illustration, graph …
FIG. 5 is an example scanning electron microscope image of a carbon nanotube (CNT)-hybrid film, according to an embodiment of the present invention; YO …
FIG. 6 is a flow diagram illustrating techniques for forming a cleaned nanotube- graphene hybrid film, according to an embodiment of the present invention. Step …
FIG. 6 is a flow diagram illustrating techniques for forming a cleaned nanotube- graphene hybrid film, according to an embodiment of the present invention. Step …
FIGS. 7 -10. Metal portions 162 and 164, each having a thickness from about 15 nm to about 300 nm, form the FET source and drain. Metals such as Pd, Ti, W, Au, …
FIGS. 7 -10. Metal portions 162 and 164, each having a thickness from about 15 nm to about 300 nm, form the FET source and drain. Metals such as Pd, Ti, W, Au, …
FIG. 8, a metal 160, having a thickness ranging from about 15 nm to about 50 nm, is deposited on the resist pattern and over portions of the carbon nanotube- …
FIG. 8, a metal 160, having a thickness ranging from about 15 nm to about 50 nm, is deposited on the resist pattern and over portions of the carbon nanotube- …
FIG. 9, the metal portions 162 and 164 remaining on the carbon nanotube-graphene hybrid 140 form the FET source and drain. In this embodiment, the source and …
FIG. 10 illustrates the doping molecules bonding to the carbon nanotube-graphene hybrid 140. The doped portion of the carbon nanotube-graphene hybrid 140 …
FIG. 11 illustrates another embodiment of forming a carbon nanotube-graphene hybrid FET, or more generally, a FET with a channel comprising a nano-component …
FIG. 12. As an example, a dilute hydrofluoric acid (HF) such as 100:1 HF can be used as an etchant for LTO. YO R₉₂₀₁₁₀₄₉₀US₂ 13 Additionally, the device is …
FIGS. 13 -15 illustrate steps in another embodiment of forming 10 a carbon nanotube-graphene hybrid FET, or more generally, a FET with a channel comprising a …
FIG. 15, metal portions 162, 164 YO R₉₂₀₁₁₀₄₉₀U S 2 14 remaining after resist liftoff form the source and drain of the FET. The process of
FIG. 16 is a flow diagram illustrating techniques for forming a nanotube-graphene hybrid film substrate, according to an embodiment of the present invention. …