Patent
US 10,079,209GRAPHENE FILM MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
Daiyu Kondo
US
Copyright © 2026 Matter42. All rights reserved.
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US 10,079,209Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a view of the semiconductor device according to a first embodiment; [0012] FIG s. 2A, 2B, and 2 C are sectional views of the semiconductor device …
FIG. 2A). The silicon substrate 10 with the oxide film is, e.g., an about 380 m -thickness silicon substrate 10 a with an about 90 nm-thickness silicon oxide …
FIG. 3A). At this time, when the intercalated iron chloride is unnecessary, the sample is held in vacuum at about 500 C, whereby the intercalated iron chloride …
FIG. 4A). The insulation film 18 is, e.g., an about 5 nm-thickness alumina (A l 203). [0084] Next, on the entire surface, an Au/Ti film (not illustrated) is …
FIG. 5A). As the catalyst metal film 22, an about 500 nm-thickness iron film, for example, is deposited on the silicon substrate 10 with the oxide film by …
FIG. 6B). [0103] Next, on the entire surface, an Au/Ti film (not-14-Substitute Specification (Clean Version) illustrated) is formed by, e.g., electron beam vapor …
FIG. 7A). The insulation film 18 is, e.g., alumina (A₁₂₀ 3) of an about 5 nm- thickness. [0106] Next, on the entire surface, an Au/Ti film (not illustrated) is …
FIG. 8A). As the catalyst metal film 22, an iron film of, e.g., an about 500 nm-thickness is deposited on the silicon substrate 10 with the oxide film by …
FIG. 9A). [0118] Next, the sample is loaded in an oxidation atmosphere of an oxidizer, e.g., an iron chloride content oxidation atmosphere using anhydrous iron …
FIG. 10A). [0124] Next, an Au/Ti film (not illustrated) is formed on the entire surface by, e.g., electron beam vapor deposition. [0125] Next, the Au/Ti film is …
FIG. 11 is a view of the semiconductor device according to a second embodiment; [0022] FIG s. 12A, 12B, and 12 C are sectional views of the semiconductor …
FIG. 12A). As the catalyst metal film 22, an about 1000 nm-thickness copper film, for example, is deposited on the transparent substrate 30 30 by sputtering, …
FIG. 13B). [0161] For the n-TFT, nitrogen or others, which is an n-dopant, is doped to form the n-source region 32s and the n-drain region 32d. For the o-TFT, …
FIG. 14B) [0167] As described above, the transparent thin film transistor using a monolayer graphene film in the channel is manufactured. [0168] (Method of …
FIG. 15A). The foil 44 is copper foil of, e.g., an about 25 m- thickness and an about 99.99 purity. [0172] Next, monolayer graphene films 32a, 32b are …
FIG. 16A). [0177] At this time, the iron chloride is often intercalated, and if necessary, the sample is held in a vacuum at about 500 C to be removed the …
FIG. 17A). The insulation film 38 is, e.g., an about 5 nm-thickness silica (silicon dioxide). [0184] Next, on the entire surface, an ITO (Indium Tin Oxide) film …
FIG. 18A). The metal foil 44 is, e.g., copper foil of an about 25 m--24-Substitute Specification (Clean Version) thickness and an bout 99.99 purity. [0191] …
FIG. 19B). [0198] For the n-TFT, nitrogen or others, which is an n-dopant, is doped to form the n-source region 32a and the n-drain region 32d. For the p-TFT, …
FIG. 20A). The insulation film 38 is, e.g., an about 5 nm-thickness silica (silicon dioxide). [0202] Then, on the entire surface an ITO Indium Tin Oxide) film …
FIG. 21A). The silicon substrate 46 with oxide film has, e.g., an about 90 nm-thickness silicon oxide film 46b formed on an about 300 m -thickness silicon …
FIG. 22 C). AT this time, when the intercalated iron chloride and copper chloride are unnecessary, the sample is held in a vacuum at about 500 C, whereby the …
FIG. 23 C) [0225] As described above, the transparent thin film transistor using the multi-layer graphene film in the channel is manufactured. [0226] The …
FIG. 24 is a view of the semiconductor device according to a third embodiment; [0035] FIG s. 25A, 25B, and 25 C are sectional views of the semiconductor device …
FIG. 25A). The metal foil 62 is, e.g., an about 1 m -thickness nickel fil of an about a purity of 99%. [0243] Next, on both surfaces of the metal foil 62, …
FIG. 26A). [0248] Next, the multi-layer graphene films 64a, 64b are patterned to form the source electrode 54, the drain electrode 56 and the gate electrode 60. …
FIG. 27 is a view of the semiconductor device according to a fourth embodiment; [0038] FIG s. 28A, 28B, and 28 C are sectional views of the semiconductor …
FIG. 28A, the metal foil 62 with the graphene film 64a, 64b formed on illustrated in
FIG. 29 C). The gate insulation film 74 is formed of an about 5 nm-thickness alumina (A 120 3) film. [0276] Then, on the channel region 12c, the gate electrode …
FIG. 30 is a view of the semiconductor device according to a fifth embodiment; [0041] FIG s. 31A, 31B, and 31 C are sectional views of the semiconductor device …
FIG. 31 is sectional views of the semiconductor device according to the fifth embodiment in the steps of the method of manufacturing the semiconductor device, …
FIG. 33 is a view of the semiconductor device according to a sixth embodiment; [0044] FIG s. 34A, 34B, and 34 C are sectional views of the semiconductor device …
FIG. 34A). The metal foil 96 is, e.g., an about 1 m -thickness nickel foil of an about 99 purity. [0322] Then, on both surfaces of the metal foil 96, …
FIG. 35A). [0327] Then, the graphene film 98 formed of the multi- layer graphene films 98a, 98b is patterned to form the gate electrode 90, the source electrode …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of manufacturing a graphene film, comprising: forming a catalyst metal film on a substrate; after forming of the catalyst metal, synthesizing a graphene film on the catalyst metal film; and after synthesizing of the grapheme film, removing the catalyst metal film in an iron chloride content oxidation atmosphere of an anhydrous iron chloride and then transferring the graphene film to the substrate on which the catalyst metal film was formed, wherein, the catalyst metal film is removed in the iron chloride content oxidation atmosphere of an anhydrous iron chloride at a temperature of 310 C after 12-24 hours. Currently amended
A method of manufacturing a graphene film according to claim 1, wherein in the transferring the graphene film to the substrate, the graphene film is intercalated. Original
A method of manufacturing a graphene film according to claim 1, further comprising: intercalating the graphene film. Original
A method of manufacturing a graphene film according to claim 1, wherein the transferring the graphene film to the substrate is made in an atmosphere degassed to a prescribed pressure or below. Original
A method of manufacturing a graphene film according to claim 1, wherein the graphene f ilm is monolayer graphene or few layer graphene. Original
A method of manufacturing a graphene film according to claim 1, wherein the graphene film is multi-layer graphene. Original
A method of manufacturing a graphene film according to claim 1, wherein the catalyst metal film contains any one of cobalt, iron, copper nickel, platinum and gold, or any one of alloy, carbide, oxide and nitride containing at least one of said metals. Original
A method of manufacturing a graphene film according to claim 1, wherein the oxidizer contains any one of iron chloride, niobium chloride, copper chloride, ytterbium chloride, cobalt chloride, alkaline metal, alkaline earth metal, rare earth and halogen. Original
A method of manufacturing a semiconductor device comprising: forming the graphene film on the substrate, on which the catalyst metal film was formed, by the method of manufacturing a graphene film according to claim 1; patterning the graphene film and forming a channel of the graphene film; forming, on the substrate, a source electrode and a drain electrode contacted to the channel; forming a gate insulation film on the channel; and forming a gate electrode on the gate insulation film. Previously presented
A method of manufacturing a semiconductor device comprising: forming the graphene film on the substrate, on which the catalyst metal film was formed, by the method of forming a graphene film according to claim 1; patterning the graphene film and forming interconnects of the graphene film; and forming electrodes contacted to the interconnects. Previously presented
A method of manufacturing a graphene film comprising: synthesizing a graphene film on a catalyst metal film of foil; mounting the catalyst metal film of foil formed on the graphene film on a substrate; and removing the catalyst metal film in an oxidation atmosphere and transferring the graphene film to the substrate. Withdrawn
A method of manufacturing a graphene film according to claim 2, further comprising: removing the graphene film formed on one surface of the catalyst metal film of foil. Withdrawn
A method of manufacturing a graphene film according to claim 2, wherein in the transferring the graphene film to the substrate, the graphene film is intercalated. Withdrawn
A method of manufacturing a graphene film according to claim 2, further comprising: intercalating the graphene film. Withdrawn
A method of manufacturing a graphene film according to claim 2, wherein the transferring the graphene film to the substrate is made in an atmosphere degassed to a prescribed pressure or below. Withdrawn
A method of manufacturing a graphene film, comprising: forming a catalyst metal film on a substrate; after forming a catalyst metal, synthesizing a graphene film on the catalyst metal film; after synthesizing of the graphene film, removing the catalyst metal film in an iron chloride content oxidation atmosphere of an anhydrous iron chloride and then transferring the graphene film to the substrate on which the catalyst metal film was formed; after transferring of the graphene film, mounting another substrate on the substrate with the graphene film transferred to; and after mounting of said another substrate, removing the substrate in an oxidation atmosphere of an oxidizer and transferring the graphene film to said another substrate, wherein, the catalyst metal film is removed in the iron chloride content oxidation atmosphere of an anhydrous iron chloride at a temperature of 310 0 C after 12-24 hours. Currently amended
A method of manufacturing a graphene film according to claim 4, wherein in the transferring the graphene film to the substrate, the graphene film is intercalated. Original
A method of manufacturing a graphene film according to claim 4. further comprising: intercalating the graphene film. Original
A method of manufacturing a graphene film according to claim 4, wherein the transferring the graphene film to the substrate is made in an atmosphere degassed to a prescribed pressure or below. Original
Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene thin-film transistor (TFT)
Materials described outside the worked examples.
graphene film
catalyst metal film
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2A). The silicon substrate 10 with the oxide film is, e.g., an about 380 m -thickness silicon substrate 10 a with an about 90 nm-thickness silicon oxide …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 0.3–5 nm | — |
Pressure | 0.01 pa |
Related documents with shared materials, methods, properties, or citations.
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Atlas literature
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US 10,079,209Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a view of the semiconductor device according to a first embodiment; [0012] FIG s. 2A, 2B, and 2 C are sectional views of the semiconductor device …
FIG. 2A). The silicon substrate 10 with the oxide film is, e.g., an about 380 m -thickness silicon substrate 10 a with an about 90 nm-thickness silicon oxide …
FIG. 3A). At this time, when the intercalated iron chloride is unnecessary, the sample is held in vacuum at about 500 C, whereby the intercalated iron chloride …
FIG. 4A). The insulation film 18 is, e.g., an about 5 nm-thickness alumina (A l 203). [0084] Next, on the entire surface, an Au/Ti film (not illustrated) is …
FIG. 5A). As the catalyst metal film 22, an about 500 nm-thickness iron film, for example, is deposited on the silicon substrate 10 with the oxide film by …
FIG. 6B). [0103] Next, on the entire surface, an Au/Ti film (not-14-Substitute Specification (Clean Version) illustrated) is formed by, e.g., electron beam vapor …
FIG. 7A). The insulation film 18 is, e.g., alumina (A₁₂₀ 3) of an about 5 nm- thickness. [0106] Next, on the entire surface, an Au/Ti film (not illustrated) is …
FIG. 8A). As the catalyst metal film 22, an iron film of, e.g., an about 500 nm-thickness is deposited on the silicon substrate 10 with the oxide film by …
FIG. 9A). [0118] Next, the sample is loaded in an oxidation atmosphere of an oxidizer, e.g., an iron chloride content oxidation atmosphere using anhydrous iron …
FIG. 10A). [0124] Next, an Au/Ti film (not illustrated) is formed on the entire surface by, e.g., electron beam vapor deposition. [0125] Next, the Au/Ti film is …
FIG. 11 is a view of the semiconductor device according to a second embodiment; [0022] FIG s. 12A, 12B, and 12 C are sectional views of the semiconductor …
FIG. 12A). As the catalyst metal film 22, an about 1000 nm-thickness copper film, for example, is deposited on the transparent substrate 30 30 by sputtering, …
FIG. 13B). [0161] For the n-TFT, nitrogen or others, which is an n-dopant, is doped to form the n-source region 32s and the n-drain region 32d. For the o-TFT, …
FIG. 14B) [0167] As described above, the transparent thin film transistor using a monolayer graphene film in the channel is manufactured. [0168] (Method of …
FIG. 15A). The foil 44 is copper foil of, e.g., an about 25 m- thickness and an about 99.99 purity. [0172] Next, monolayer graphene films 32a, 32b are …
FIG. 16A). [0177] At this time, the iron chloride is often intercalated, and if necessary, the sample is held in a vacuum at about 500 C to be removed the …
FIG. 17A). The insulation film 38 is, e.g., an about 5 nm-thickness silica (silicon dioxide). [0184] Next, on the entire surface, an ITO (Indium Tin Oxide) film …
FIG. 18A). The metal foil 44 is, e.g., copper foil of an about 25 m--24-Substitute Specification (Clean Version) thickness and an bout 99.99 purity. [0191] …
FIG. 19B). [0198] For the n-TFT, nitrogen or others, which is an n-dopant, is doped to form the n-source region 32a and the n-drain region 32d. For the p-TFT, …
FIG. 20A). The insulation film 38 is, e.g., an about 5 nm-thickness silica (silicon dioxide). [0202] Then, on the entire surface an ITO Indium Tin Oxide) film …
FIG. 21A). The silicon substrate 46 with oxide film has, e.g., an about 90 nm-thickness silicon oxide film 46b formed on an about 300 m -thickness silicon …
FIG. 22 C). AT this time, when the intercalated iron chloride and copper chloride are unnecessary, the sample is held in a vacuum at about 500 C, whereby the …
FIG. 23 C) [0225] As described above, the transparent thin film transistor using the multi-layer graphene film in the channel is manufactured. [0226] The …
FIG. 24 is a view of the semiconductor device according to a third embodiment; [0035] FIG s. 25A, 25B, and 25 C are sectional views of the semiconductor device …
FIG. 25A). The metal foil 62 is, e.g., an about 1 m -thickness nickel fil of an about a purity of 99%. [0243] Next, on both surfaces of the metal foil 62, …
FIG. 26A). [0248] Next, the multi-layer graphene films 64a, 64b are patterned to form the source electrode 54, the drain electrode 56 and the gate electrode 60. …
FIG. 27 is a view of the semiconductor device according to a fourth embodiment; [0038] FIG s. 28A, 28B, and 28 C are sectional views of the semiconductor …
FIG. 28A, the metal foil 62 with the graphene film 64a, 64b formed on illustrated in
FIG. 29 C). The gate insulation film 74 is formed of an about 5 nm-thickness alumina (A 120 3) film. [0276] Then, on the channel region 12c, the gate electrode …
FIG. 30 is a view of the semiconductor device according to a fifth embodiment; [0041] FIG s. 31A, 31B, and 31 C are sectional views of the semiconductor device …
FIG. 31 is sectional views of the semiconductor device according to the fifth embodiment in the steps of the method of manufacturing the semiconductor device, …
FIG. 33 is a view of the semiconductor device according to a sixth embodiment; [0044] FIG s. 34A, 34B, and 34 C are sectional views of the semiconductor device …
FIG. 34A). The metal foil 96 is, e.g., an about 1 m -thickness nickel foil of an about 99 purity. [0322] Then, on both surfaces of the metal foil 96, …
FIG. 35A). [0327] Then, the graphene film 98 formed of the multi- layer graphene films 98a, 98b is patterned to form the gate electrode 90, the source electrode …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of manufacturing a graphene film, comprising: forming a catalyst metal film on a substrate; after forming of the catalyst metal, synthesizing a graphene film on the catalyst metal film; and after synthesizing of the grapheme film, removing the catalyst metal film in an iron chloride content oxidation atmosphere of an anhydrous iron chloride and then transferring the graphene film to the substrate on which the catalyst metal film was formed, wherein, the catalyst metal film is removed in the iron chloride content oxidation atmosphere of an anhydrous iron chloride at a temperature of 310 C after 12-24 hours. Currently amended
A method of manufacturing a graphene film according to claim 1, wherein in the transferring the graphene film to the substrate, the graphene film is intercalated. Original
A method of manufacturing a graphene film according to claim 1, further comprising: intercalating the graphene film. Original
A method of manufacturing a graphene film according to claim 1, wherein the transferring the graphene film to the substrate is made in an atmosphere degassed to a prescribed pressure or below. Original
A method of manufacturing a graphene film according to claim 1, wherein the graphene f ilm is monolayer graphene or few layer graphene. Original
A method of manufacturing a graphene film according to claim 1, wherein the graphene film is multi-layer graphene. Original
A method of manufacturing a graphene film according to claim 1, wherein the catalyst metal film contains any one of cobalt, iron, copper nickel, platinum and gold, or any one of alloy, carbide, oxide and nitride containing at least one of said metals. Original
A method of manufacturing a graphene film according to claim 1, wherein the oxidizer contains any one of iron chloride, niobium chloride, copper chloride, ytterbium chloride, cobalt chloride, alkaline metal, alkaline earth metal, rare earth and halogen. Original
A method of manufacturing a semiconductor device comprising: forming the graphene film on the substrate, on which the catalyst metal film was formed, by the method of manufacturing a graphene film according to claim 1; patterning the graphene film and forming a channel of the graphene film; forming, on the substrate, a source electrode and a drain electrode contacted to the channel; forming a gate insulation film on the channel; and forming a gate electrode on the gate insulation film. Previously presented
A method of manufacturing a semiconductor device comprising: forming the graphene film on the substrate, on which the catalyst metal film was formed, by the method of forming a graphene film according to claim 1; patterning the graphene film and forming interconnects of the graphene film; and forming electrodes contacted to the interconnects. Previously presented
A method of manufacturing a graphene film comprising: synthesizing a graphene film on a catalyst metal film of foil; mounting the catalyst metal film of foil formed on the graphene film on a substrate; and removing the catalyst metal film in an oxidation atmosphere and transferring the graphene film to the substrate. Withdrawn
A method of manufacturing a graphene film according to claim 2, further comprising: removing the graphene film formed on one surface of the catalyst metal film of foil. Withdrawn
A method of manufacturing a graphene film according to claim 2, wherein in the transferring the graphene film to the substrate, the graphene film is intercalated. Withdrawn
A method of manufacturing a graphene film according to claim 2, further comprising: intercalating the graphene film. Withdrawn
A method of manufacturing a graphene film according to claim 2, wherein the transferring the graphene film to the substrate is made in an atmosphere degassed to a prescribed pressure or below. Withdrawn
A method of manufacturing a graphene film, comprising: forming a catalyst metal film on a substrate; after forming a catalyst metal, synthesizing a graphene film on the catalyst metal film; after synthesizing of the graphene film, removing the catalyst metal film in an iron chloride content oxidation atmosphere of an anhydrous iron chloride and then transferring the graphene film to the substrate on which the catalyst metal film was formed; after transferring of the graphene film, mounting another substrate on the substrate with the graphene film transferred to; and after mounting of said another substrate, removing the substrate in an oxidation atmosphere of an oxidizer and transferring the graphene film to said another substrate, wherein, the catalyst metal film is removed in the iron chloride content oxidation atmosphere of an anhydrous iron chloride at a temperature of 310 0 C after 12-24 hours. Currently amended
A method of manufacturing a graphene film according to claim 4, wherein in the transferring the graphene film to the substrate, the graphene film is intercalated. Original
A method of manufacturing a graphene film according to claim 4. further comprising: intercalating the graphene film. Original
A method of manufacturing a graphene film according to claim 4, wherein the transferring the graphene film to the substrate is made in an atmosphere degassed to a prescribed pressure or below. Original
Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene thin-film transistor (TFT)
Materials described outside the worked examples.
graphene film
catalyst metal film
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2A). The silicon substrate 10 with the oxide film is, e.g., an about 380 m -thickness silicon substrate 10 a with an about 90 nm-thickness silicon oxide …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 0.3–5 nm | — |
Pressure | 0.01 pa |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,079,209Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a view of the semiconductor device according to a first embodiment; [0012] FIG s. 2A, 2B, and 2 C are sectional views of the semiconductor device …
FIG. 2A). The silicon substrate 10 with the oxide film is, e.g., an about 380 m -thickness silicon substrate 10 a with an about 90 nm-thickness silicon oxide …
FIG. 3A). At this time, when the intercalated iron chloride is unnecessary, the sample is held in vacuum at about 500 C, whereby the intercalated iron chloride …
FIG. 4A). The insulation film 18 is, e.g., an about 5 nm-thickness alumina (A l 203). [0084] Next, on the entire surface, an Au/Ti film (not illustrated) is …
FIG. 5A). As the catalyst metal film 22, an about 500 nm-thickness iron film, for example, is deposited on the silicon substrate 10 with the oxide film by …
FIG. 6B). [0103] Next, on the entire surface, an Au/Ti film (not-14-Substitute Specification (Clean Version) illustrated) is formed by, e.g., electron beam vapor …
FIG. 7A). The insulation film 18 is, e.g., alumina (A₁₂₀ 3) of an about 5 nm- thickness. [0106] Next, on the entire surface, an Au/Ti film (not illustrated) is …
FIG. 8A). As the catalyst metal film 22, an iron film of, e.g., an about 500 nm-thickness is deposited on the silicon substrate 10 with the oxide film by …
FIG. 9A). [0118] Next, the sample is loaded in an oxidation atmosphere of an oxidizer, e.g., an iron chloride content oxidation atmosphere using anhydrous iron …
FIG. 10A). [0124] Next, an Au/Ti film (not illustrated) is formed on the entire surface by, e.g., electron beam vapor deposition. [0125] Next, the Au/Ti film is …
FIG. 11 is a view of the semiconductor device according to a second embodiment; [0022] FIG s. 12A, 12B, and 12 C are sectional views of the semiconductor …
FIG. 12A). As the catalyst metal film 22, an about 1000 nm-thickness copper film, for example, is deposited on the transparent substrate 30 30 by sputtering, …
FIG. 13B). [0161] For the n-TFT, nitrogen or others, which is an n-dopant, is doped to form the n-source region 32s and the n-drain region 32d. For the o-TFT, …
FIG. 14B) [0167] As described above, the transparent thin film transistor using a monolayer graphene film in the channel is manufactured. [0168] (Method of …
FIG. 15A). The foil 44 is copper foil of, e.g., an about 25 m- thickness and an about 99.99 purity. [0172] Next, monolayer graphene films 32a, 32b are …
FIG. 16A). [0177] At this time, the iron chloride is often intercalated, and if necessary, the sample is held in a vacuum at about 500 C to be removed the …
FIG. 17A). The insulation film 38 is, e.g., an about 5 nm-thickness silica (silicon dioxide). [0184] Next, on the entire surface, an ITO (Indium Tin Oxide) film …
FIG. 18A). The metal foil 44 is, e.g., copper foil of an about 25 m--24-Substitute Specification (Clean Version) thickness and an bout 99.99 purity. [0191] …
FIG. 19B). [0198] For the n-TFT, nitrogen or others, which is an n-dopant, is doped to form the n-source region 32a and the n-drain region 32d. For the p-TFT, …
FIG. 20A). The insulation film 38 is, e.g., an about 5 nm-thickness silica (silicon dioxide). [0202] Then, on the entire surface an ITO Indium Tin Oxide) film …
FIG. 21A). The silicon substrate 46 with oxide film has, e.g., an about 90 nm-thickness silicon oxide film 46b formed on an about 300 m -thickness silicon …
FIG. 22 C). AT this time, when the intercalated iron chloride and copper chloride are unnecessary, the sample is held in a vacuum at about 500 C, whereby the …
FIG. 23 C) [0225] As described above, the transparent thin film transistor using the multi-layer graphene film in the channel is manufactured. [0226] The …
FIG. 24 is a view of the semiconductor device according to a third embodiment; [0035] FIG s. 25A, 25B, and 25 C are sectional views of the semiconductor device …
FIG. 25A). The metal foil 62 is, e.g., an about 1 m -thickness nickel fil of an about a purity of 99%. [0243] Next, on both surfaces of the metal foil 62, …
FIG. 26A). [0248] Next, the multi-layer graphene films 64a, 64b are patterned to form the source electrode 54, the drain electrode 56 and the gate electrode 60. …
FIG. 27 is a view of the semiconductor device according to a fourth embodiment; [0038] FIG s. 28A, 28B, and 28 C are sectional views of the semiconductor …
FIG. 28A, the metal foil 62 with the graphene film 64a, 64b formed on illustrated in
FIG. 29 C). The gate insulation film 74 is formed of an about 5 nm-thickness alumina (A 120 3) film. [0276] Then, on the channel region 12c, the gate electrode …
FIG. 30 is a view of the semiconductor device according to a fifth embodiment; [0041] FIG s. 31A, 31B, and 31 C are sectional views of the semiconductor device …
FIG. 31 is sectional views of the semiconductor device according to the fifth embodiment in the steps of the method of manufacturing the semiconductor device, …
FIG. 33 is a view of the semiconductor device according to a sixth embodiment; [0044] FIG s. 34A, 34B, and 34 C are sectional views of the semiconductor device …
FIG. 34A). The metal foil 96 is, e.g., an about 1 m -thickness nickel foil of an about 99 purity. [0322] Then, on both surfaces of the metal foil 96, …
FIG. 35A). [0327] Then, the graphene film 98 formed of the multi- layer graphene films 98a, 98b is patterned to form the gate electrode 90, the source electrode …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of manufacturing a graphene film, comprising: forming a catalyst metal film on a substrate; after forming of the catalyst metal, synthesizing a graphene film on the catalyst metal film; and after synthesizing of the grapheme film, removing the catalyst metal film in an iron chloride content oxidation atmosphere of an anhydrous iron chloride and then transferring the graphene film to the substrate on which the catalyst metal film was formed, wherein, the catalyst metal film is removed in the iron chloride content oxidation atmosphere of an anhydrous iron chloride at a temperature of 310 C after 12-24 hours. Currently amended
A method of manufacturing a graphene film according to claim 1, wherein in the transferring the graphene film to the substrate, the graphene film is intercalated. Original
A method of manufacturing a graphene film according to claim 1, further comprising: intercalating the graphene film. Original
A method of manufacturing a graphene film according to claim 1, wherein the transferring the graphene film to the substrate is made in an atmosphere degassed to a prescribed pressure or below. Original
A method of manufacturing a graphene film according to claim 1, wherein the graphene f ilm is monolayer graphene or few layer graphene. Original
A method of manufacturing a graphene film according to claim 1, wherein the graphene film is multi-layer graphene. Original
A method of manufacturing a graphene film according to claim 1, wherein the catalyst metal film contains any one of cobalt, iron, copper nickel, platinum and gold, or any one of alloy, carbide, oxide and nitride containing at least one of said metals. Original
A method of manufacturing a graphene film according to claim 1, wherein the oxidizer contains any one of iron chloride, niobium chloride, copper chloride, ytterbium chloride, cobalt chloride, alkaline metal, alkaline earth metal, rare earth and halogen. Original
A method of manufacturing a semiconductor device comprising: forming the graphene film on the substrate, on which the catalyst metal film was formed, by the method of manufacturing a graphene film according to claim 1; patterning the graphene film and forming a channel of the graphene film; forming, on the substrate, a source electrode and a drain electrode contacted to the channel; forming a gate insulation film on the channel; and forming a gate electrode on the gate insulation film. Previously presented
A method of manufacturing a semiconductor device comprising: forming the graphene film on the substrate, on which the catalyst metal film was formed, by the method of forming a graphene film according to claim 1; patterning the graphene film and forming interconnects of the graphene film; and forming electrodes contacted to the interconnects. Previously presented
A method of manufacturing a graphene film comprising: synthesizing a graphene film on a catalyst metal film of foil; mounting the catalyst metal film of foil formed on the graphene film on a substrate; and removing the catalyst metal film in an oxidation atmosphere and transferring the graphene film to the substrate. Withdrawn
A method of manufacturing a graphene film according to claim 2, further comprising: removing the graphene film formed on one surface of the catalyst metal film of foil. Withdrawn
A method of manufacturing a graphene film according to claim 2, wherein in the transferring the graphene film to the substrate, the graphene film is intercalated. Withdrawn
A method of manufacturing a graphene film according to claim 2, further comprising: intercalating the graphene film. Withdrawn
A method of manufacturing a graphene film according to claim 2, wherein the transferring the graphene film to the substrate is made in an atmosphere degassed to a prescribed pressure or below. Withdrawn
A method of manufacturing a graphene film, comprising: forming a catalyst metal film on a substrate; after forming a catalyst metal, synthesizing a graphene film on the catalyst metal film; after synthesizing of the graphene film, removing the catalyst metal film in an iron chloride content oxidation atmosphere of an anhydrous iron chloride and then transferring the graphene film to the substrate on which the catalyst metal film was formed; after transferring of the graphene film, mounting another substrate on the substrate with the graphene film transferred to; and after mounting of said another substrate, removing the substrate in an oxidation atmosphere of an oxidizer and transferring the graphene film to said another substrate, wherein, the catalyst metal film is removed in the iron chloride content oxidation atmosphere of an anhydrous iron chloride at a temperature of 310 0 C after 12-24 hours. Currently amended
A method of manufacturing a graphene film according to claim 4, wherein in the transferring the graphene film to the substrate, the graphene film is intercalated. Original
A method of manufacturing a graphene film according to claim 4. further comprising: intercalating the graphene film. Original
A method of manufacturing a graphene film according to claim 4, wherein the transferring the graphene film to the substrate is made in an atmosphere degassed to a prescribed pressure or below. Original
Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene thin-film transistor (TFT)
Materials described outside the worked examples.
graphene film
catalyst metal film
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2A). The silicon substrate 10 with the oxide film is, e.g., an about 380 m -thickness silicon substrate 10 a with an about 90 nm-thickness silicon oxide …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 0.3–5 nm | — |
Pressure | 0.01 pa |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,079,209Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a view of the semiconductor device according to a first embodiment; [0012] FIG s. 2A, 2B, and 2 C are sectional views of the semiconductor device …
FIG. 2A). The silicon substrate 10 with the oxide film is, e.g., an about 380 m -thickness silicon substrate 10 a with an about 90 nm-thickness silicon oxide …
FIG. 3A). At this time, when the intercalated iron chloride is unnecessary, the sample is held in vacuum at about 500 C, whereby the intercalated iron chloride …
FIG. 4A). The insulation film 18 is, e.g., an about 5 nm-thickness alumina (A l 203). [0084] Next, on the entire surface, an Au/Ti film (not illustrated) is …
FIG. 5A). As the catalyst metal film 22, an about 500 nm-thickness iron film, for example, is deposited on the silicon substrate 10 with the oxide film by …
FIG. 6B). [0103] Next, on the entire surface, an Au/Ti film (not-14-Substitute Specification (Clean Version) illustrated) is formed by, e.g., electron beam vapor …
FIG. 7A). The insulation film 18 is, e.g., alumina (A₁₂₀ 3) of an about 5 nm- thickness. [0106] Next, on the entire surface, an Au/Ti film (not illustrated) is …
FIG. 8A). As the catalyst metal film 22, an iron film of, e.g., an about 500 nm-thickness is deposited on the silicon substrate 10 with the oxide film by …
FIG. 9A). [0118] Next, the sample is loaded in an oxidation atmosphere of an oxidizer, e.g., an iron chloride content oxidation atmosphere using anhydrous iron …
FIG. 10A). [0124] Next, an Au/Ti film (not illustrated) is formed on the entire surface by, e.g., electron beam vapor deposition. [0125] Next, the Au/Ti film is …
FIG. 11 is a view of the semiconductor device according to a second embodiment; [0022] FIG s. 12A, 12B, and 12 C are sectional views of the semiconductor …
FIG. 12A). As the catalyst metal film 22, an about 1000 nm-thickness copper film, for example, is deposited on the transparent substrate 30 30 by sputtering, …
FIG. 13B). [0161] For the n-TFT, nitrogen or others, which is an n-dopant, is doped to form the n-source region 32s and the n-drain region 32d. For the o-TFT, …
FIG. 14B) [0167] As described above, the transparent thin film transistor using a monolayer graphene film in the channel is manufactured. [0168] (Method of …
FIG. 15A). The foil 44 is copper foil of, e.g., an about 25 m- thickness and an about 99.99 purity. [0172] Next, monolayer graphene films 32a, 32b are …
FIG. 16A). [0177] At this time, the iron chloride is often intercalated, and if necessary, the sample is held in a vacuum at about 500 C to be removed the …
FIG. 17A). The insulation film 38 is, e.g., an about 5 nm-thickness silica (silicon dioxide). [0184] Next, on the entire surface, an ITO (Indium Tin Oxide) film …
FIG. 18A). The metal foil 44 is, e.g., copper foil of an about 25 m--24-Substitute Specification (Clean Version) thickness and an bout 99.99 purity. [0191] …
FIG. 19B). [0198] For the n-TFT, nitrogen or others, which is an n-dopant, is doped to form the n-source region 32a and the n-drain region 32d. For the p-TFT, …
FIG. 20A). The insulation film 38 is, e.g., an about 5 nm-thickness silica (silicon dioxide). [0202] Then, on the entire surface an ITO Indium Tin Oxide) film …
FIG. 21A). The silicon substrate 46 with oxide film has, e.g., an about 90 nm-thickness silicon oxide film 46b formed on an about 300 m -thickness silicon …
FIG. 22 C). AT this time, when the intercalated iron chloride and copper chloride are unnecessary, the sample is held in a vacuum at about 500 C, whereby the …
FIG. 23 C) [0225] As described above, the transparent thin film transistor using the multi-layer graphene film in the channel is manufactured. [0226] The …
FIG. 24 is a view of the semiconductor device according to a third embodiment; [0035] FIG s. 25A, 25B, and 25 C are sectional views of the semiconductor device …
FIG. 25A). The metal foil 62 is, e.g., an about 1 m -thickness nickel fil of an about a purity of 99%. [0243] Next, on both surfaces of the metal foil 62, …
FIG. 26A). [0248] Next, the multi-layer graphene films 64a, 64b are patterned to form the source electrode 54, the drain electrode 56 and the gate electrode 60. …
FIG. 27 is a view of the semiconductor device according to a fourth embodiment; [0038] FIG s. 28A, 28B, and 28 C are sectional views of the semiconductor …
FIG. 28A, the metal foil 62 with the graphene film 64a, 64b formed on illustrated in
FIG. 29 C). The gate insulation film 74 is formed of an about 5 nm-thickness alumina (A 120 3) film. [0276] Then, on the channel region 12c, the gate electrode …
FIG. 30 is a view of the semiconductor device according to a fifth embodiment; [0041] FIG s. 31A, 31B, and 31 C are sectional views of the semiconductor device …
FIG. 31 is sectional views of the semiconductor device according to the fifth embodiment in the steps of the method of manufacturing the semiconductor device, …
FIG. 33 is a view of the semiconductor device according to a sixth embodiment; [0044] FIG s. 34A, 34B, and 34 C are sectional views of the semiconductor device …
FIG. 34A). The metal foil 96 is, e.g., an about 1 m -thickness nickel foil of an about 99 purity. [0322] Then, on both surfaces of the metal foil 96, …
FIG. 35A). [0327] Then, the graphene film 98 formed of the multi- layer graphene films 98a, 98b is patterned to form the gate electrode 90, the source electrode …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of manufacturing a graphene film, comprising: forming a catalyst metal film on a substrate; after forming of the catalyst metal, synthesizing a graphene film on the catalyst metal film; and after synthesizing of the grapheme film, removing the catalyst metal film in an iron chloride content oxidation atmosphere of an anhydrous iron chloride and then transferring the graphene film to the substrate on which the catalyst metal film was formed, wherein, the catalyst metal film is removed in the iron chloride content oxidation atmosphere of an anhydrous iron chloride at a temperature of 310 C after 12-24 hours. Currently amended
A method of manufacturing a graphene film according to claim 1, wherein in the transferring the graphene film to the substrate, the graphene film is intercalated. Original
A method of manufacturing a graphene film according to claim 1, further comprising: intercalating the graphene film. Original
A method of manufacturing a graphene film according to claim 1, wherein the transferring the graphene film to the substrate is made in an atmosphere degassed to a prescribed pressure or below. Original
A method of manufacturing a graphene film according to claim 1, wherein the graphene f ilm is monolayer graphene or few layer graphene. Original
A method of manufacturing a graphene film according to claim 1, wherein the graphene film is multi-layer graphene. Original
A method of manufacturing a graphene film according to claim 1, wherein the catalyst metal film contains any one of cobalt, iron, copper nickel, platinum and gold, or any one of alloy, carbide, oxide and nitride containing at least one of said metals. Original
A method of manufacturing a graphene film according to claim 1, wherein the oxidizer contains any one of iron chloride, niobium chloride, copper chloride, ytterbium chloride, cobalt chloride, alkaline metal, alkaline earth metal, rare earth and halogen. Original
A method of manufacturing a semiconductor device comprising: forming the graphene film on the substrate, on which the catalyst metal film was formed, by the method of manufacturing a graphene film according to claim 1; patterning the graphene film and forming a channel of the graphene film; forming, on the substrate, a source electrode and a drain electrode contacted to the channel; forming a gate insulation film on the channel; and forming a gate electrode on the gate insulation film. Previously presented
A method of manufacturing a semiconductor device comprising: forming the graphene film on the substrate, on which the catalyst metal film was formed, by the method of forming a graphene film according to claim 1; patterning the graphene film and forming interconnects of the graphene film; and forming electrodes contacted to the interconnects. Previously presented
A method of manufacturing a graphene film comprising: synthesizing a graphene film on a catalyst metal film of foil; mounting the catalyst metal film of foil formed on the graphene film on a substrate; and removing the catalyst metal film in an oxidation atmosphere and transferring the graphene film to the substrate. Withdrawn
A method of manufacturing a graphene film according to claim 2, further comprising: removing the graphene film formed on one surface of the catalyst metal film of foil. Withdrawn
A method of manufacturing a graphene film according to claim 2, wherein in the transferring the graphene film to the substrate, the graphene film is intercalated. Withdrawn
A method of manufacturing a graphene film according to claim 2, further comprising: intercalating the graphene film. Withdrawn
A method of manufacturing a graphene film according to claim 2, wherein the transferring the graphene film to the substrate is made in an atmosphere degassed to a prescribed pressure or below. Withdrawn
A method of manufacturing a graphene film, comprising: forming a catalyst metal film on a substrate; after forming a catalyst metal, synthesizing a graphene film on the catalyst metal film; after synthesizing of the graphene film, removing the catalyst metal film in an iron chloride content oxidation atmosphere of an anhydrous iron chloride and then transferring the graphene film to the substrate on which the catalyst metal film was formed; after transferring of the graphene film, mounting another substrate on the substrate with the graphene film transferred to; and after mounting of said another substrate, removing the substrate in an oxidation atmosphere of an oxidizer and transferring the graphene film to said another substrate, wherein, the catalyst metal film is removed in the iron chloride content oxidation atmosphere of an anhydrous iron chloride at a temperature of 310 0 C after 12-24 hours. Currently amended
A method of manufacturing a graphene film according to claim 4, wherein in the transferring the graphene film to the substrate, the graphene film is intercalated. Original
A method of manufacturing a graphene film according to claim 4. further comprising: intercalating the graphene film. Original
A method of manufacturing a graphene film according to claim 4, wherein the transferring the graphene film to the substrate is made in an atmosphere degassed to a prescribed pressure or below. Original
Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene thin-film transistor (TFT)
Materials described outside the worked examples.
graphene film
catalyst metal film
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2A). The silicon substrate 10 with the oxide film is, e.g., an about 380 m -thickness silicon substrate 10 a with an about 90 nm-thickness silicon oxide …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 0.3–5 nm | — |
Pressure | 0.01 pa |
Related documents with shared materials, methods, properties, or citations.
anhydrous iron chloride
FeCl₃
monolayer graphene
few layer graphene
multi-layer graphene
cobalt film
Co
silicon substrate with silicon oxide film
alumina gate insulation film
Al₂O₃
Au/Ti electrode film
methane gas
CH₄
FIG. 2A). The silicon substrate 10 with the oxide film is, e.g., an about 380 m -thickness silicon substrate 10 a with an about 90 nm-thickness silicon oxide …
FIG. 4A). The insulation film 18 is, e.g., an about 5 nm-thickness alumina (A l 203). [0084] Next, on the entire surface, an Au/Ti film (not illustrated) is …
FIG. 4A). The insulation film 18 is, e.g., an about 5 nm-thickness alumina (A l 203). [0084] Next, on the entire surface, an Au/Ti film (not illustrated) is …
FIG. 5A). As the catalyst metal film 22, an about 500 nm-thickness iron film, for example, is deposited on the silicon substrate 10 with the oxide film by …
FIG. 7A). The insulation film 18 is, e.g., alumina (A₁₂₀ 3) of an about 5 nm- thickness. [0106] Next, on the entire surface, an Au/Ti film (not illustrated) is …
FIG. 7A). The insulation film 18 is, e.g., alumina (A₁₂₀ 3) of an about 5 nm- thickness. [0106] Next, on the entire surface, an Au/Ti film (not illustrated) is …
FIG. 8A). As the catalyst metal film 22, an iron film of, e.g., an about 500 nm-thickness is deposited on the silicon substrate 10 with the oxide film by …
FIG. 10A). [0124] Next, an Au/Ti film (not illustrated) is formed on the entire surface by, e.g., electron beam vapor deposition. [0125] Next, the Au/Ti film is …
FIG. 10A). [0124] Next, an Au/Ti film (not illustrated) is formed on the entire surface by, e.g., electron beam vapor deposition. [0125] Next, the Au/Ti film is …
FIG. 12A). As the catalyst metal film 22, an about 1000 nm-thickness copper film, for example, is deposited on the transparent substrate 30 30 by sputtering, …
FIG. 14B) [0167] As described above, the transparent thin film transistor using a monolayer graphene film in the channel is manufactured. [0168] (Method of …
FIG. 14B) [0167] As described above, the transparent thin film transistor using a monolayer graphene film in the channel is manufactured. [0168] (Method of …
FIG. 15A). The foil 44 is copper foil of, e.g., an about 25 m- thickness and an about 99.99 purity. [0172] Next, monolayer graphene films 32a, 32b are …
FIG. 17A). The insulation film 38 is, e.g., an about 5 nm-thickness silica (silicon dioxide). [0184] Next, on the entire surface, an ITO (Indium Tin Oxide) film …
FIG. 17A). The insulation film 38 is, e.g., an about 5 nm-thickness silica (silicon dioxide). [0184] Next, on the entire surface, an ITO (Indium Tin Oxide) film …
FIG. 18A). The metal foil 44 is, e.g., copper foil of an about 25 m--24-Substitute Specification (Clean Version) thickness and an bout 99.99 purity. [0191] …
FIG. 20A). The insulation film 38 is, e.g., an about 5 nm-thickness silica (silicon dioxide). [0202] Then, on the entire surface an ITO Indium Tin Oxide) film …
FIG. 21A). The silicon substrate 46 with oxide film has, e.g., an about 90 nm-thickness silicon oxide film 46b formed on an about 300 m -thickness silicon …
FIG. 23 C) [0225] As described above, the transparent thin film transistor using the multi-layer graphene film in the channel is manufactured. [0226] The …
FIG. 23 C) [0225] As described above, the transparent thin film transistor using the multi-layer graphene film in the channel is manufactured. [0226] The …
FIG. 25A). The metal foil 62 is, e.g., an about 1 m -thickness nickel fil of an about a purity of 99%. [0243] Next, on both surfaces of the metal foil 62, …
FIG. 29 C). The gate insulation film 74 is formed of an about 5 nm-thickness alumina (A 120 3) film. [0276] Then, on the channel region 12c, the gate electrode …
FIG. 31 is sectional views of the semiconductor device according to the fifth embodiment in the steps of the method of manufacturing the semiconductor device, …
FIG. 34A). The metal foil 96 is, e.g., an about 1 m -thickness nickel foil of an about 99 purity. [0322] Then, on both surfaces of the metal foil 96, …
| — |
Thickness | 0.5–1000 nm | — |
Thickness | 1–20 nm | — |
Duration | 1–60 minutes | — |
Duration | 12–24 hours | — |
Thickness | 0.5–3000 nm | — |
Thickness | 3–20 nm | — |
Duration | 6–24 hours | — |
Thickness | 0.9–50 nm | — |
Pressure | 0.000001 Torr | — |
Pressure | ≤ 0.01 pa | — |
anhydrous iron chloride
FeCl₃
monolayer graphene
few layer graphene
multi-layer graphene
cobalt film
Co
silicon substrate with silicon oxide film
alumina gate insulation film
Al₂O₃
Au/Ti electrode film
methane gas
CH₄
FIG. 2A). The silicon substrate 10 with the oxide film is, e.g., an about 380 m -thickness silicon substrate 10 a with an about 90 nm-thickness silicon oxide …
FIG. 4A). The insulation film 18 is, e.g., an about 5 nm-thickness alumina (A l 203). [0084] Next, on the entire surface, an Au/Ti film (not illustrated) is …
FIG. 4A). The insulation film 18 is, e.g., an about 5 nm-thickness alumina (A l 203). [0084] Next, on the entire surface, an Au/Ti film (not illustrated) is …
FIG. 5A). As the catalyst metal film 22, an about 500 nm-thickness iron film, for example, is deposited on the silicon substrate 10 with the oxide film by …
FIG. 7A). The insulation film 18 is, e.g., alumina (A₁₂₀ 3) of an about 5 nm- thickness. [0106] Next, on the entire surface, an Au/Ti film (not illustrated) is …
FIG. 7A). The insulation film 18 is, e.g., alumina (A₁₂₀ 3) of an about 5 nm- thickness. [0106] Next, on the entire surface, an Au/Ti film (not illustrated) is …
FIG. 8A). As the catalyst metal film 22, an iron film of, e.g., an about 500 nm-thickness is deposited on the silicon substrate 10 with the oxide film by …
FIG. 10A). [0124] Next, an Au/Ti film (not illustrated) is formed on the entire surface by, e.g., electron beam vapor deposition. [0125] Next, the Au/Ti film is …
FIG. 10A). [0124] Next, an Au/Ti film (not illustrated) is formed on the entire surface by, e.g., electron beam vapor deposition. [0125] Next, the Au/Ti film is …
FIG. 12A). As the catalyst metal film 22, an about 1000 nm-thickness copper film, for example, is deposited on the transparent substrate 30 30 by sputtering, …
FIG. 14B) [0167] As described above, the transparent thin film transistor using a monolayer graphene film in the channel is manufactured. [0168] (Method of …
FIG. 14B) [0167] As described above, the transparent thin film transistor using a monolayer graphene film in the channel is manufactured. [0168] (Method of …
FIG. 15A). The foil 44 is copper foil of, e.g., an about 25 m- thickness and an about 99.99 purity. [0172] Next, monolayer graphene films 32a, 32b are …
FIG. 17A). The insulation film 38 is, e.g., an about 5 nm-thickness silica (silicon dioxide). [0184] Next, on the entire surface, an ITO (Indium Tin Oxide) film …
FIG. 17A). The insulation film 38 is, e.g., an about 5 nm-thickness silica (silicon dioxide). [0184] Next, on the entire surface, an ITO (Indium Tin Oxide) film …
FIG. 18A). The metal foil 44 is, e.g., copper foil of an about 25 m--24-Substitute Specification (Clean Version) thickness and an bout 99.99 purity. [0191] …
FIG. 20A). The insulation film 38 is, e.g., an about 5 nm-thickness silica (silicon dioxide). [0202] Then, on the entire surface an ITO Indium Tin Oxide) film …
FIG. 21A). The silicon substrate 46 with oxide film has, e.g., an about 90 nm-thickness silicon oxide film 46b formed on an about 300 m -thickness silicon …
FIG. 23 C) [0225] As described above, the transparent thin film transistor using the multi-layer graphene film in the channel is manufactured. [0226] The …
FIG. 23 C) [0225] As described above, the transparent thin film transistor using the multi-layer graphene film in the channel is manufactured. [0226] The …
FIG. 25A). The metal foil 62 is, e.g., an about 1 m -thickness nickel fil of an about a purity of 99%. [0243] Next, on both surfaces of the metal foil 62, …
FIG. 29 C). The gate insulation film 74 is formed of an about 5 nm-thickness alumina (A 120 3) film. [0276] Then, on the channel region 12c, the gate electrode …
FIG. 31 is sectional views of the semiconductor device according to the fifth embodiment in the steps of the method of manufacturing the semiconductor device, …
FIG. 34A). The metal foil 96 is, e.g., an about 1 m -thickness nickel foil of an about 99 purity. [0322] Then, on both surfaces of the metal foil 96, …
| — |
Thickness | 0.5–1000 nm | — |
Thickness | 1–20 nm | — |
Duration | 1–60 minutes | — |
Duration | 12–24 hours | — |
Thickness | 0.5–3000 nm | — |
Thickness | 3–20 nm | — |
Duration | 6–24 hours | — |
Thickness | 0.9–50 nm | — |
Pressure | 0.000001 Torr | — |
Pressure | ≤ 0.01 pa | — |
anhydrous iron chloride
FeCl₃
monolayer graphene
few layer graphene
multi-layer graphene
cobalt film
Co
silicon substrate with silicon oxide film
alumina gate insulation film
Al₂O₃
Au/Ti electrode film
methane gas
CH₄
FIG. 2A). The silicon substrate 10 with the oxide film is, e.g., an about 380 m -thickness silicon substrate 10 a with an about 90 nm-thickness silicon oxide …
FIG. 4A). The insulation film 18 is, e.g., an about 5 nm-thickness alumina (A l 203). [0084] Next, on the entire surface, an Au/Ti film (not illustrated) is …
FIG. 4A). The insulation film 18 is, e.g., an about 5 nm-thickness alumina (A l 203). [0084] Next, on the entire surface, an Au/Ti film (not illustrated) is …
FIG. 5A). As the catalyst metal film 22, an about 500 nm-thickness iron film, for example, is deposited on the silicon substrate 10 with the oxide film by …
FIG. 7A). The insulation film 18 is, e.g., alumina (A₁₂₀ 3) of an about 5 nm- thickness. [0106] Next, on the entire surface, an Au/Ti film (not illustrated) is …
FIG. 7A). The insulation film 18 is, e.g., alumina (A₁₂₀ 3) of an about 5 nm- thickness. [0106] Next, on the entire surface, an Au/Ti film (not illustrated) is …
FIG. 8A). As the catalyst metal film 22, an iron film of, e.g., an about 500 nm-thickness is deposited on the silicon substrate 10 with the oxide film by …
FIG. 10A). [0124] Next, an Au/Ti film (not illustrated) is formed on the entire surface by, e.g., electron beam vapor deposition. [0125] Next, the Au/Ti film is …
FIG. 10A). [0124] Next, an Au/Ti film (not illustrated) is formed on the entire surface by, e.g., electron beam vapor deposition. [0125] Next, the Au/Ti film is …
FIG. 12A). As the catalyst metal film 22, an about 1000 nm-thickness copper film, for example, is deposited on the transparent substrate 30 30 by sputtering, …
FIG. 14B) [0167] As described above, the transparent thin film transistor using a monolayer graphene film in the channel is manufactured. [0168] (Method of …
FIG. 14B) [0167] As described above, the transparent thin film transistor using a monolayer graphene film in the channel is manufactured. [0168] (Method of …
FIG. 15A). The foil 44 is copper foil of, e.g., an about 25 m- thickness and an about 99.99 purity. [0172] Next, monolayer graphene films 32a, 32b are …
FIG. 17A). The insulation film 38 is, e.g., an about 5 nm-thickness silica (silicon dioxide). [0184] Next, on the entire surface, an ITO (Indium Tin Oxide) film …
FIG. 17A). The insulation film 38 is, e.g., an about 5 nm-thickness silica (silicon dioxide). [0184] Next, on the entire surface, an ITO (Indium Tin Oxide) film …
FIG. 18A). The metal foil 44 is, e.g., copper foil of an about 25 m--24-Substitute Specification (Clean Version) thickness and an bout 99.99 purity. [0191] …
FIG. 20A). The insulation film 38 is, e.g., an about 5 nm-thickness silica (silicon dioxide). [0202] Then, on the entire surface an ITO Indium Tin Oxide) film …
FIG. 21A). The silicon substrate 46 with oxide film has, e.g., an about 90 nm-thickness silicon oxide film 46b formed on an about 300 m -thickness silicon …
FIG. 23 C) [0225] As described above, the transparent thin film transistor using the multi-layer graphene film in the channel is manufactured. [0226] The …
FIG. 23 C) [0225] As described above, the transparent thin film transistor using the multi-layer graphene film in the channel is manufactured. [0226] The …
FIG. 25A). The metal foil 62 is, e.g., an about 1 m -thickness nickel fil of an about a purity of 99%. [0243] Next, on both surfaces of the metal foil 62, …
FIG. 29 C). The gate insulation film 74 is formed of an about 5 nm-thickness alumina (A 120 3) film. [0276] Then, on the channel region 12c, the gate electrode …
FIG. 31 is sectional views of the semiconductor device according to the fifth embodiment in the steps of the method of manufacturing the semiconductor device, …
FIG. 34A). The metal foil 96 is, e.g., an about 1 m -thickness nickel foil of an about 99 purity. [0322] Then, on both surfaces of the metal foil 96, …
| — |
Thickness | 0.5–1000 nm | — |
Thickness | 1–20 nm | — |
Duration | 1–60 minutes | — |
Duration | 12–24 hours | — |
Thickness | 0.5–3000 nm | — |
Thickness | 3–20 nm | — |
Duration | 6–24 hours | — |
Thickness | 0.9–50 nm | — |
Pressure | 0.000001 Torr | — |
Pressure | ≤ 0.01 pa | — |
anhydrous iron chloride
FeCl₃
monolayer graphene
few layer graphene
multi-layer graphene
cobalt film
Co
silicon substrate with silicon oxide film
alumina gate insulation film
Al₂O₃
Au/Ti electrode film
methane gas
CH₄
FIG. 2A). The silicon substrate 10 with the oxide film is, e.g., an about 380 m -thickness silicon substrate 10 a with an about 90 nm-thickness silicon oxide …
FIG. 4A). The insulation film 18 is, e.g., an about 5 nm-thickness alumina (A l 203). [0084] Next, on the entire surface, an Au/Ti film (not illustrated) is …
FIG. 4A). The insulation film 18 is, e.g., an about 5 nm-thickness alumina (A l 203). [0084] Next, on the entire surface, an Au/Ti film (not illustrated) is …
FIG. 5A). As the catalyst metal film 22, an about 500 nm-thickness iron film, for example, is deposited on the silicon substrate 10 with the oxide film by …
FIG. 7A). The insulation film 18 is, e.g., alumina (A₁₂₀ 3) of an about 5 nm- thickness. [0106] Next, on the entire surface, an Au/Ti film (not illustrated) is …
FIG. 7A). The insulation film 18 is, e.g., alumina (A₁₂₀ 3) of an about 5 nm- thickness. [0106] Next, on the entire surface, an Au/Ti film (not illustrated) is …
FIG. 8A). As the catalyst metal film 22, an iron film of, e.g., an about 500 nm-thickness is deposited on the silicon substrate 10 with the oxide film by …
FIG. 10A). [0124] Next, an Au/Ti film (not illustrated) is formed on the entire surface by, e.g., electron beam vapor deposition. [0125] Next, the Au/Ti film is …
FIG. 10A). [0124] Next, an Au/Ti film (not illustrated) is formed on the entire surface by, e.g., electron beam vapor deposition. [0125] Next, the Au/Ti film is …
FIG. 12A). As the catalyst metal film 22, an about 1000 nm-thickness copper film, for example, is deposited on the transparent substrate 30 30 by sputtering, …
FIG. 14B) [0167] As described above, the transparent thin film transistor using a monolayer graphene film in the channel is manufactured. [0168] (Method of …
FIG. 14B) [0167] As described above, the transparent thin film transistor using a monolayer graphene film in the channel is manufactured. [0168] (Method of …
FIG. 15A). The foil 44 is copper foil of, e.g., an about 25 m- thickness and an about 99.99 purity. [0172] Next, monolayer graphene films 32a, 32b are …
FIG. 17A). The insulation film 38 is, e.g., an about 5 nm-thickness silica (silicon dioxide). [0184] Next, on the entire surface, an ITO (Indium Tin Oxide) film …
FIG. 17A). The insulation film 38 is, e.g., an about 5 nm-thickness silica (silicon dioxide). [0184] Next, on the entire surface, an ITO (Indium Tin Oxide) film …
FIG. 18A). The metal foil 44 is, e.g., copper foil of an about 25 m--24-Substitute Specification (Clean Version) thickness and an bout 99.99 purity. [0191] …
FIG. 20A). The insulation film 38 is, e.g., an about 5 nm-thickness silica (silicon dioxide). [0202] Then, on the entire surface an ITO Indium Tin Oxide) film …
FIG. 21A). The silicon substrate 46 with oxide film has, e.g., an about 90 nm-thickness silicon oxide film 46b formed on an about 300 m -thickness silicon …
FIG. 23 C) [0225] As described above, the transparent thin film transistor using the multi-layer graphene film in the channel is manufactured. [0226] The …
FIG. 23 C) [0225] As described above, the transparent thin film transistor using the multi-layer graphene film in the channel is manufactured. [0226] The …
FIG. 25A). The metal foil 62 is, e.g., an about 1 m -thickness nickel fil of an about a purity of 99%. [0243] Next, on both surfaces of the metal foil 62, …
FIG. 29 C). The gate insulation film 74 is formed of an about 5 nm-thickness alumina (A 120 3) film. [0276] Then, on the channel region 12c, the gate electrode …
FIG. 31 is sectional views of the semiconductor device according to the fifth embodiment in the steps of the method of manufacturing the semiconductor device, …
FIG. 34A). The metal foil 96 is, e.g., an about 1 m -thickness nickel foil of an about 99 purity. [0322] Then, on both surfaces of the metal foil 96, …
| — |
Thickness | 0.5–1000 nm | — |
Thickness | 1–20 nm | — |
Duration | 1–60 minutes | — |
Duration | 12–24 hours | — |
Thickness | 0.5–3000 nm | — |
Thickness | 3–20 nm | — |
Duration | 6–24 hours | — |
Thickness | 0.9–50 nm | — |
Pressure | 0.000001 Torr | — |
Pressure | ≤ 0.01 pa | — |