Patent
US 9,105,853N-DOPANT FOR CARBON NANOTUBES AND GRAPHENE
Ali Afzali-Ardakani
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,105,853Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1. The resist pattern formed on the carbon nanotube may have one or multiple separations from about 10 nm to about 500 nm when e-beam li thography is …
FIG. 2, a metal 160, having a thickness ranging from about 15 nm to about 50 nm, is deposited on the resist pattern and over portions of the carbon nanotube 5 …
FIG. 3, the metal portions 162 and 164 remaining on the carbon nanotube 140 form the FET source and drain. In this embodiment, the source and drains are formed …
FIG. 4 illustrates the doping molecules bonding to the carbon nanotube 140. The doped portion of the carbon nanotube 140 (between the metal source and drain) …
FIG. 5 illustrates another embodiment of forming a carbon nanotube F ET, or 25 more generally, a F ET with a channel compris in g a nano-component such as …
FIG. 6. As an example, a dilute hydrofluoric (HF) acid such as 100:1 HF can be used as an etchant for LTO. Additionally, the device is immersed in a dopant …
FIGS. 7-9 illustrate steps in another embodiment of forming a carbon nanotube F ET, or more generally, a F ET with a channel comprising a nano- component such …
FIG. 8 illustrates a step in another embodiment of forming a CN F ET, according to an embodiment of the present invention;
FIG. 9 illustrates a step in another embodiment of forming a CN F ET, according to 25 an embodiment of the present invention;
FIG. 10 is a di agram 1002 illustrating the chemical structure dihydrotetraazapentacene, according to an embodiment of the present invention. As 25 detailed …
FIG. 11 is a flow diagram illustrating techniques for forming a field effect transistor with a stable n-doped nano-component, according to an embodiment of the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method comprising: exposing a portion of a nano-component of a field effect transistor to dihydrotetraazapentacene, wherein dihydrotetraazapentacene is represented by the formula: H., H wherein each of R I, R2, R3, and R₄ comprises one of hydrogen, an alkyl group of C 1 to C₁₆ carbons, an alkoxy group, an alkylthio group, a trialkylsilane group, a hydroxymethyl group, a carboxylic acid group and a carboxylic ester group.
The method of claim 1, wherein said exposing comprises treating the portion of the nanocomponent with a solution of dihydrotetraazapentacene in an organic solvent.
The method of claim 1, wherein at least one of R I, R2, R3, and R₄ is hydrogen. 2 Attorney Docket No. Y O R₉₂₀₁₁₀₄₉₂US₂ Confirmation No. 1803
The method of claim 1, wherein at least one of R 1, R2, R3, and R₄ is an alkyl group of C 1 to C₁₆ carbons.
A method comprising: forming a gate dielectric on a gate; forming a channel comprising a nano-component on the gate dielectric; forming a source over a first region of the nanocomponent; forming a drain over a second region of the nano-component to form a field effect transistor; and exposing a portion of a nano-component of a field effect transistor to dihydrotetraazapentacene, wherein dihydrotetraazapentacene is represented by the formula: H SVG 14051869.02-23-2015.I₆I₅PQ₁SPXXIFW3.CLM10706849.14.309.1481.1676.1568.svg 0.29 4.557 Chemistry Black and white SVG 14051869.02-23-2015.I₆I₅PQ₁SPXXIFW3.CLM10706849.15.344.1671.1677.1803.svg 0.44 4.443 Chemistry Black and white wherein each of R 1, R2, R3, and R₄ comprises one of hydrogen, an alkyl group of C 1 to C₁₆ carbons, an alkoxy group, an alkylthio group, a trialkylsilane group, a hydroxymethyl group, a carboxylic acid group and a carboxylic ester group.
The method of claim 7, further comprising: providing a dielectric layer on the nano-component; providing a gate material layer on the dielectric layer; patterning the gate material layer to form a top gate; and patterning the dielectric layer by using the top gate as a mask.
The method of claim 7, wherein the nano-component is a carbon nanotube. 3 Attorney Docket No. Y O R₉₂₀₁₁₀₄₉₂US₂ Confirmation No. 1803
The method of claim 7, wherein the nano-component is a semiconductor nanotube.
The method of claim 7, wherein the nano-component is one of a semiconductor nanocrystal and a semiconductor nanowire.
The method of claim 7, wherein the nano-component comprises elements of Groups III, IV, V and VI.
The method of claim 7, wherein said exposing comprises applying a suspension of the nanocomponent in a solution containing dihydrotetraazapentacene to the portion of the nanocomponent.
The method of claim 7, wherein the steps of forming a source over a first 4 Attorney Docket No. Y O R₉₂₀₁₁₀₄₉₂US₂ Confirmation No. 1803 region of the nano-component and forming a drain over a second region of the nano-component comprise the steps of: applying a resist layer over the nano-component; patterning the resist layer; depositing a metal layer over the patterned resist layer; and exposing the patterned resist layer to a resist liftoff component to remove the patterned resist layer and a portion of the metal layer, thereby leaving other portions of the metal layer to form the drain and the source.
The method of claim 7, wherein the portion of the nano-component exposed to dihydrotetraazapentacene is between the first region and the second region of the nanocomponent.
The method of claim 7, wherein the portion of the nano-component exposed to dihydrotetraazapentacene comprises the first region and the second region of the nanocomponent.
Layer stacks claimed or described, ordered top of device to substrate.
n-doped nano-component field-effect transistor (FET)
Materials described outside the worked examples.
dihydrotetraazapentacene
carbon nanotube
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1. The resist pattern formed on the carbon nanotube may have one or multiple separations from about 10 nm to about 500 nm when e-beam li thography is …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 10–500 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,105,853Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1. The resist pattern formed on the carbon nanotube may have one or multiple separations from about 10 nm to about 500 nm when e-beam li thography is …
FIG. 2, a metal 160, having a thickness ranging from about 15 nm to about 50 nm, is deposited on the resist pattern and over portions of the carbon nanotube 5 …
FIG. 3, the metal portions 162 and 164 remaining on the carbon nanotube 140 form the FET source and drain. In this embodiment, the source and drains are formed …
FIG. 4 illustrates the doping molecules bonding to the carbon nanotube 140. The doped portion of the carbon nanotube 140 (between the metal source and drain) …
FIG. 5 illustrates another embodiment of forming a carbon nanotube F ET, or 25 more generally, a F ET with a channel compris in g a nano-component such as …
FIG. 6. As an example, a dilute hydrofluoric (HF) acid such as 100:1 HF can be used as an etchant for LTO. Additionally, the device is immersed in a dopant …
FIGS. 7-9 illustrate steps in another embodiment of forming a carbon nanotube F ET, or more generally, a F ET with a channel comprising a nano- component such …
FIG. 8 illustrates a step in another embodiment of forming a CN F ET, according to an embodiment of the present invention;
FIG. 9 illustrates a step in another embodiment of forming a CN F ET, according to 25 an embodiment of the present invention;
FIG. 10 is a di agram 1002 illustrating the chemical structure dihydrotetraazapentacene, according to an embodiment of the present invention. As 25 detailed …
FIG. 11 is a flow diagram illustrating techniques for forming a field effect transistor with a stable n-doped nano-component, according to an embodiment of the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method comprising: exposing a portion of a nano-component of a field effect transistor to dihydrotetraazapentacene, wherein dihydrotetraazapentacene is represented by the formula: H., H wherein each of R I, R2, R3, and R₄ comprises one of hydrogen, an alkyl group of C 1 to C₁₆ carbons, an alkoxy group, an alkylthio group, a trialkylsilane group, a hydroxymethyl group, a carboxylic acid group and a carboxylic ester group.
The method of claim 1, wherein said exposing comprises treating the portion of the nanocomponent with a solution of dihydrotetraazapentacene in an organic solvent.
The method of claim 1, wherein at least one of R I, R2, R3, and R₄ is hydrogen. 2 Attorney Docket No. Y O R₉₂₀₁₁₀₄₉₂US₂ Confirmation No. 1803
The method of claim 1, wherein at least one of R 1, R2, R3, and R₄ is an alkyl group of C 1 to C₁₆ carbons.
A method comprising: forming a gate dielectric on a gate; forming a channel comprising a nano-component on the gate dielectric; forming a source over a first region of the nanocomponent; forming a drain over a second region of the nano-component to form a field effect transistor; and exposing a portion of a nano-component of a field effect transistor to dihydrotetraazapentacene, wherein dihydrotetraazapentacene is represented by the formula: H SVG 14051869.02-23-2015.I₆I₅PQ₁SPXXIFW3.CLM10706849.14.309.1481.1676.1568.svg 0.29 4.557 Chemistry Black and white SVG 14051869.02-23-2015.I₆I₅PQ₁SPXXIFW3.CLM10706849.15.344.1671.1677.1803.svg 0.44 4.443 Chemistry Black and white wherein each of R 1, R2, R3, and R₄ comprises one of hydrogen, an alkyl group of C 1 to C₁₆ carbons, an alkoxy group, an alkylthio group, a trialkylsilane group, a hydroxymethyl group, a carboxylic acid group and a carboxylic ester group.
The method of claim 7, further comprising: providing a dielectric layer on the nano-component; providing a gate material layer on the dielectric layer; patterning the gate material layer to form a top gate; and patterning the dielectric layer by using the top gate as a mask.
The method of claim 7, wherein the nano-component is a carbon nanotube. 3 Attorney Docket No. Y O R₉₂₀₁₁₀₄₉₂US₂ Confirmation No. 1803
The method of claim 7, wherein the nano-component is a semiconductor nanotube.
The method of claim 7, wherein the nano-component is one of a semiconductor nanocrystal and a semiconductor nanowire.
The method of claim 7, wherein the nano-component comprises elements of Groups III, IV, V and VI.
The method of claim 7, wherein said exposing comprises applying a suspension of the nanocomponent in a solution containing dihydrotetraazapentacene to the portion of the nanocomponent.
The method of claim 7, wherein the steps of forming a source over a first 4 Attorney Docket No. Y O R₉₂₀₁₁₀₄₉₂US₂ Confirmation No. 1803 region of the nano-component and forming a drain over a second region of the nano-component comprise the steps of: applying a resist layer over the nano-component; patterning the resist layer; depositing a metal layer over the patterned resist layer; and exposing the patterned resist layer to a resist liftoff component to remove the patterned resist layer and a portion of the metal layer, thereby leaving other portions of the metal layer to form the drain and the source.
The method of claim 7, wherein the portion of the nano-component exposed to dihydrotetraazapentacene is between the first region and the second region of the nanocomponent.
The method of claim 7, wherein the portion of the nano-component exposed to dihydrotetraazapentacene comprises the first region and the second region of the nanocomponent.
Layer stacks claimed or described, ordered top of device to substrate.
n-doped nano-component field-effect transistor (FET)
Materials described outside the worked examples.
dihydrotetraazapentacene
carbon nanotube
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1. The resist pattern formed on the carbon nanotube may have one or multiple separations from about 10 nm to about 500 nm when e-beam li thography is …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 10–500 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,105,853Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1. The resist pattern formed on the carbon nanotube may have one or multiple separations from about 10 nm to about 500 nm when e-beam li thography is …
FIG. 2, a metal 160, having a thickness ranging from about 15 nm to about 50 nm, is deposited on the resist pattern and over portions of the carbon nanotube 5 …
FIG. 3, the metal portions 162 and 164 remaining on the carbon nanotube 140 form the FET source and drain. In this embodiment, the source and drains are formed …
FIG. 4 illustrates the doping molecules bonding to the carbon nanotube 140. The doped portion of the carbon nanotube 140 (between the metal source and drain) …
FIG. 5 illustrates another embodiment of forming a carbon nanotube F ET, or 25 more generally, a F ET with a channel compris in g a nano-component such as …
FIG. 6. As an example, a dilute hydrofluoric (HF) acid such as 100:1 HF can be used as an etchant for LTO. Additionally, the device is immersed in a dopant …
FIGS. 7-9 illustrate steps in another embodiment of forming a carbon nanotube F ET, or more generally, a F ET with a channel comprising a nano- component such …
FIG. 8 illustrates a step in another embodiment of forming a CN F ET, according to an embodiment of the present invention;
FIG. 9 illustrates a step in another embodiment of forming a CN F ET, according to 25 an embodiment of the present invention;
FIG. 10 is a di agram 1002 illustrating the chemical structure dihydrotetraazapentacene, according to an embodiment of the present invention. As 25 detailed …
FIG. 11 is a flow diagram illustrating techniques for forming a field effect transistor with a stable n-doped nano-component, according to an embodiment of the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method comprising: exposing a portion of a nano-component of a field effect transistor to dihydrotetraazapentacene, wherein dihydrotetraazapentacene is represented by the formula: H., H wherein each of R I, R2, R3, and R₄ comprises one of hydrogen, an alkyl group of C 1 to C₁₆ carbons, an alkoxy group, an alkylthio group, a trialkylsilane group, a hydroxymethyl group, a carboxylic acid group and a carboxylic ester group.
The method of claim 1, wherein said exposing comprises treating the portion of the nanocomponent with a solution of dihydrotetraazapentacene in an organic solvent.
The method of claim 1, wherein at least one of R I, R2, R3, and R₄ is hydrogen. 2 Attorney Docket No. Y O R₉₂₀₁₁₀₄₉₂US₂ Confirmation No. 1803
The method of claim 1, wherein at least one of R 1, R2, R3, and R₄ is an alkyl group of C 1 to C₁₆ carbons.
A method comprising: forming a gate dielectric on a gate; forming a channel comprising a nano-component on the gate dielectric; forming a source over a first region of the nanocomponent; forming a drain over a second region of the nano-component to form a field effect transistor; and exposing a portion of a nano-component of a field effect transistor to dihydrotetraazapentacene, wherein dihydrotetraazapentacene is represented by the formula: H SVG 14051869.02-23-2015.I₆I₅PQ₁SPXXIFW3.CLM10706849.14.309.1481.1676.1568.svg 0.29 4.557 Chemistry Black and white SVG 14051869.02-23-2015.I₆I₅PQ₁SPXXIFW3.CLM10706849.15.344.1671.1677.1803.svg 0.44 4.443 Chemistry Black and white wherein each of R 1, R2, R3, and R₄ comprises one of hydrogen, an alkyl group of C 1 to C₁₆ carbons, an alkoxy group, an alkylthio group, a trialkylsilane group, a hydroxymethyl group, a carboxylic acid group and a carboxylic ester group.
The method of claim 7, further comprising: providing a dielectric layer on the nano-component; providing a gate material layer on the dielectric layer; patterning the gate material layer to form a top gate; and patterning the dielectric layer by using the top gate as a mask.
The method of claim 7, wherein the nano-component is a carbon nanotube. 3 Attorney Docket No. Y O R₉₂₀₁₁₀₄₉₂US₂ Confirmation No. 1803
The method of claim 7, wherein the nano-component is a semiconductor nanotube.
The method of claim 7, wherein the nano-component is one of a semiconductor nanocrystal and a semiconductor nanowire.
The method of claim 7, wherein the nano-component comprises elements of Groups III, IV, V and VI.
The method of claim 7, wherein said exposing comprises applying a suspension of the nanocomponent in a solution containing dihydrotetraazapentacene to the portion of the nanocomponent.
The method of claim 7, wherein the steps of forming a source over a first 4 Attorney Docket No. Y O R₉₂₀₁₁₀₄₉₂US₂ Confirmation No. 1803 region of the nano-component and forming a drain over a second region of the nano-component comprise the steps of: applying a resist layer over the nano-component; patterning the resist layer; depositing a metal layer over the patterned resist layer; and exposing the patterned resist layer to a resist liftoff component to remove the patterned resist layer and a portion of the metal layer, thereby leaving other portions of the metal layer to form the drain and the source.
The method of claim 7, wherein the portion of the nano-component exposed to dihydrotetraazapentacene is between the first region and the second region of the nanocomponent.
The method of claim 7, wherein the portion of the nano-component exposed to dihydrotetraazapentacene comprises the first region and the second region of the nanocomponent.
Layer stacks claimed or described, ordered top of device to substrate.
n-doped nano-component field-effect transistor (FET)
Materials described outside the worked examples.
dihydrotetraazapentacene
carbon nanotube
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1. The resist pattern formed on the carbon nanotube may have one or multiple separations from about 10 nm to about 500 nm when e-beam li thography is …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 10–500 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,105,853Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1. The resist pattern formed on the carbon nanotube may have one or multiple separations from about 10 nm to about 500 nm when e-beam li thography is …
FIG. 2, a metal 160, having a thickness ranging from about 15 nm to about 50 nm, is deposited on the resist pattern and over portions of the carbon nanotube 5 …
FIG. 3, the metal portions 162 and 164 remaining on the carbon nanotube 140 form the FET source and drain. In this embodiment, the source and drains are formed …
FIG. 4 illustrates the doping molecules bonding to the carbon nanotube 140. The doped portion of the carbon nanotube 140 (between the metal source and drain) …
FIG. 5 illustrates another embodiment of forming a carbon nanotube F ET, or 25 more generally, a F ET with a channel compris in g a nano-component such as …
FIG. 6. As an example, a dilute hydrofluoric (HF) acid such as 100:1 HF can be used as an etchant for LTO. Additionally, the device is immersed in a dopant …
FIGS. 7-9 illustrate steps in another embodiment of forming a carbon nanotube F ET, or more generally, a F ET with a channel comprising a nano- component such …
FIG. 8 illustrates a step in another embodiment of forming a CN F ET, according to an embodiment of the present invention;
FIG. 9 illustrates a step in another embodiment of forming a CN F ET, according to 25 an embodiment of the present invention;
FIG. 10 is a di agram 1002 illustrating the chemical structure dihydrotetraazapentacene, according to an embodiment of the present invention. As 25 detailed …
FIG. 11 is a flow diagram illustrating techniques for forming a field effect transistor with a stable n-doped nano-component, according to an embodiment of the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method comprising: exposing a portion of a nano-component of a field effect transistor to dihydrotetraazapentacene, wherein dihydrotetraazapentacene is represented by the formula: H., H wherein each of R I, R2, R3, and R₄ comprises one of hydrogen, an alkyl group of C 1 to C₁₆ carbons, an alkoxy group, an alkylthio group, a trialkylsilane group, a hydroxymethyl group, a carboxylic acid group and a carboxylic ester group.
The method of claim 1, wherein said exposing comprises treating the portion of the nanocomponent with a solution of dihydrotetraazapentacene in an organic solvent.
The method of claim 1, wherein at least one of R I, R2, R3, and R₄ is hydrogen. 2 Attorney Docket No. Y O R₉₂₀₁₁₀₄₉₂US₂ Confirmation No. 1803
The method of claim 1, wherein at least one of R 1, R2, R3, and R₄ is an alkyl group of C 1 to C₁₆ carbons.
A method comprising: forming a gate dielectric on a gate; forming a channel comprising a nano-component on the gate dielectric; forming a source over a first region of the nanocomponent; forming a drain over a second region of the nano-component to form a field effect transistor; and exposing a portion of a nano-component of a field effect transistor to dihydrotetraazapentacene, wherein dihydrotetraazapentacene is represented by the formula: H SVG 14051869.02-23-2015.I₆I₅PQ₁SPXXIFW3.CLM10706849.14.309.1481.1676.1568.svg 0.29 4.557 Chemistry Black and white SVG 14051869.02-23-2015.I₆I₅PQ₁SPXXIFW3.CLM10706849.15.344.1671.1677.1803.svg 0.44 4.443 Chemistry Black and white wherein each of R 1, R2, R3, and R₄ comprises one of hydrogen, an alkyl group of C 1 to C₁₆ carbons, an alkoxy group, an alkylthio group, a trialkylsilane group, a hydroxymethyl group, a carboxylic acid group and a carboxylic ester group.
The method of claim 7, further comprising: providing a dielectric layer on the nano-component; providing a gate material layer on the dielectric layer; patterning the gate material layer to form a top gate; and patterning the dielectric layer by using the top gate as a mask.
The method of claim 7, wherein the nano-component is a carbon nanotube. 3 Attorney Docket No. Y O R₉₂₀₁₁₀₄₉₂US₂ Confirmation No. 1803
The method of claim 7, wherein the nano-component is a semiconductor nanotube.
The method of claim 7, wherein the nano-component is one of a semiconductor nanocrystal and a semiconductor nanowire.
The method of claim 7, wherein the nano-component comprises elements of Groups III, IV, V and VI.
The method of claim 7, wherein said exposing comprises applying a suspension of the nanocomponent in a solution containing dihydrotetraazapentacene to the portion of the nanocomponent.
The method of claim 7, wherein the steps of forming a source over a first 4 Attorney Docket No. Y O R₉₂₀₁₁₀₄₉₂US₂ Confirmation No. 1803 region of the nano-component and forming a drain over a second region of the nano-component comprise the steps of: applying a resist layer over the nano-component; patterning the resist layer; depositing a metal layer over the patterned resist layer; and exposing the patterned resist layer to a resist liftoff component to remove the patterned resist layer and a portion of the metal layer, thereby leaving other portions of the metal layer to form the drain and the source.
The method of claim 7, wherein the portion of the nano-component exposed to dihydrotetraazapentacene is between the first region and the second region of the nanocomponent.
The method of claim 7, wherein the portion of the nano-component exposed to dihydrotetraazapentacene comprises the first region and the second region of the nanocomponent.
Layer stacks claimed or described, ordered top of device to substrate.
n-doped nano-component field-effect transistor (FET)
Materials described outside the worked examples.
dihydrotetraazapentacene
carbon nanotube
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1. The resist pattern formed on the carbon nanotube may have one or multiple separations from about 10 nm to about 500 nm when e-beam li thography is …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 10–500 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
dimethyl sulfoxide
DMSO
dimethylformamide
DMF
N-methylpyrolidine
semiconductor nano-component materials
silicon dioxide/oxynitride/high-K dielectric
graphene
FIG. 1. The resist pattern formed on the carbon nanotube may have one or multiple separations from about 10 nm to about 500 nm when e-beam li thography is …
FIG. 2, a metal 160, having a thickness ranging from about 15 nm to about 50 nm, is deposited on the resist pattern and over portions of the carbon nanotube 5 …
FIG. 2, a metal 160, having a thickness ranging from about 15 nm to about 50 nm, is deposited on the resist pattern and over portions of the carbon nanotube 5 …
FIG. 3, the metal portions 162 and 164 remaining on the carbon nanotube 140 form the FET source and drain. In this embodiment, the source and drains are formed …
FIG. 4 illustrates the doping molecules bonding to the carbon nanotube 140. The doped portion of the carbon nanotube 140 (between the metal source and drain) …
FIG. 5 illustrates another embodiment of forming a carbon nanotube F ET, or 25 more generally, a F ET with a channel compris in g a nano-component such as …
FIG. 6. As an example, a dilute hydrofluoric (HF) acid such as 100:1 HF can be used as an etchant for LTO. Additionally, the device is immersed in a dopant …
FIGS. 7-9 illustrate steps in another embodiment of forming a carbon nanotube F ET, or more generally, a F ET with a channel comprising a nano- component such …
FIG. 11 is a flow diagram illustrating techniques for forming a field effect transistor with a stable n-doped nano-component, according to an embodiment of the …
| — |
Thickness | 15–300 nm | — |
Thickness | 1–100 nm | — |
dimethyl sulfoxide
DMSO
dimethylformamide
DMF
N-methylpyrolidine
semiconductor nano-component materials
silicon dioxide/oxynitride/high-K dielectric
graphene
FIG. 1. The resist pattern formed on the carbon nanotube may have one or multiple separations from about 10 nm to about 500 nm when e-beam li thography is …
FIG. 2, a metal 160, having a thickness ranging from about 15 nm to about 50 nm, is deposited on the resist pattern and over portions of the carbon nanotube 5 …
FIG. 2, a metal 160, having a thickness ranging from about 15 nm to about 50 nm, is deposited on the resist pattern and over portions of the carbon nanotube 5 …
FIG. 3, the metal portions 162 and 164 remaining on the carbon nanotube 140 form the FET source and drain. In this embodiment, the source and drains are formed …
FIG. 4 illustrates the doping molecules bonding to the carbon nanotube 140. The doped portion of the carbon nanotube 140 (between the metal source and drain) …
FIG. 5 illustrates another embodiment of forming a carbon nanotube F ET, or 25 more generally, a F ET with a channel compris in g a nano-component such as …
FIG. 6. As an example, a dilute hydrofluoric (HF) acid such as 100:1 HF can be used as an etchant for LTO. Additionally, the device is immersed in a dopant …
FIGS. 7-9 illustrate steps in another embodiment of forming a carbon nanotube F ET, or more generally, a F ET with a channel comprising a nano- component such …
FIG. 11 is a flow diagram illustrating techniques for forming a field effect transistor with a stable n-doped nano-component, according to an embodiment of the …
| — |
Thickness | 15–300 nm | — |
Thickness | 1–100 nm | — |
dimethyl sulfoxide
DMSO
dimethylformamide
DMF
N-methylpyrolidine
semiconductor nano-component materials
silicon dioxide/oxynitride/high-K dielectric
graphene
FIG. 1. The resist pattern formed on the carbon nanotube may have one or multiple separations from about 10 nm to about 500 nm when e-beam li thography is …
FIG. 2, a metal 160, having a thickness ranging from about 15 nm to about 50 nm, is deposited on the resist pattern and over portions of the carbon nanotube 5 …
FIG. 2, a metal 160, having a thickness ranging from about 15 nm to about 50 nm, is deposited on the resist pattern and over portions of the carbon nanotube 5 …
FIG. 3, the metal portions 162 and 164 remaining on the carbon nanotube 140 form the FET source and drain. In this embodiment, the source and drains are formed …
FIG. 4 illustrates the doping molecules bonding to the carbon nanotube 140. The doped portion of the carbon nanotube 140 (between the metal source and drain) …
FIG. 5 illustrates another embodiment of forming a carbon nanotube F ET, or 25 more generally, a F ET with a channel compris in g a nano-component such as …
FIG. 6. As an example, a dilute hydrofluoric (HF) acid such as 100:1 HF can be used as an etchant for LTO. Additionally, the device is immersed in a dopant …
FIGS. 7-9 illustrate steps in another embodiment of forming a carbon nanotube F ET, or more generally, a F ET with a channel comprising a nano- component such …
FIG. 11 is a flow diagram illustrating techniques for forming a field effect transistor with a stable n-doped nano-component, according to an embodiment of the …
| — |
Thickness | 15–300 nm | — |
Thickness | 1–100 nm | — |
dimethyl sulfoxide
DMSO
dimethylformamide
DMF
N-methylpyrolidine
semiconductor nano-component materials
silicon dioxide/oxynitride/high-K dielectric
graphene
FIG. 1. The resist pattern formed on the carbon nanotube may have one or multiple separations from about 10 nm to about 500 nm when e-beam li thography is …
FIG. 2, a metal 160, having a thickness ranging from about 15 nm to about 50 nm, is deposited on the resist pattern and over portions of the carbon nanotube 5 …
FIG. 2, a metal 160, having a thickness ranging from about 15 nm to about 50 nm, is deposited on the resist pattern and over portions of the carbon nanotube 5 …
FIG. 3, the metal portions 162 and 164 remaining on the carbon nanotube 140 form the FET source and drain. In this embodiment, the source and drains are formed …
FIG. 4 illustrates the doping molecules bonding to the carbon nanotube 140. The doped portion of the carbon nanotube 140 (between the metal source and drain) …
FIG. 5 illustrates another embodiment of forming a carbon nanotube F ET, or 25 more generally, a F ET with a channel compris in g a nano-component such as …
FIG. 6. As an example, a dilute hydrofluoric (HF) acid such as 100:1 HF can be used as an etchant for LTO. Additionally, the device is immersed in a dopant …
FIGS. 7-9 illustrate steps in another embodiment of forming a carbon nanotube F ET, or more generally, a F ET with a channel comprising a nano- component such …
FIG. 11 is a flow diagram illustrating techniques for forming a field effect transistor with a stable n-doped nano-component, according to an embodiment of the …
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Thickness | 15–300 nm | — |
Thickness | 1–100 nm | — |