Patent
US 9,991,081ELECTRON EMITTING DEVICE USING GRAPHENE AND METHOD FOR MANUFACTURING SAME
Shanghyeun PARK
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
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US 9,991,081Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1. The electron emitting devices may be independently driven to emit electrons. [52] Specifically, the electron emitting device array 800 includes a 11 …
FIG. 2 is a cross-sectional view of the electron emitting device 100 illustrated in
FIG. 3, a slot 1 10 a having a predetermined shape penetrates through the metal holder 110. Herein, the slot 1 10 a may be provided to penetrate between a first …
FIGS. 4A and 4B illustrate an example in which the graphene emitter 122 is attached onto a rear surface of the emitter supporting member 121. However, the …
FIG. 5. In this case, the graphene emitter 322 may be provided on a surface of the emitter supporting member 321 to cover the edge of the emitter supporting …
FIG. 6 is a bottom perspective view of a gate electrode of the electron emitting 20 device, according to an example embodiment. [11]
FIG. 7. In this case, the graphene gate 342 may be attached onto a surface of the gate supporting member 341. Then, the prepared gate electrode 340 is attached …
FIG. 8, the metal holder 210 includes a plurality of slots 210 a, and the emitter plates 220 are inserted into the slots 210a. Herein, the emitter plates 220 …
FIG. 9) of the metal holder 310. The slot 310a may be provided perpendicularly to the first surface (or the second surface) of the metal holder 310. The metal …
FIG. 10, first and second supporters 421 and 422 are sequentially provided on a base 410, and then the metal holder 310 is provided on the second supporter 422. …
FIG. 11) of the metal holder 310 to penetrate through the second through hole 422a and contact a top surface of the first supporter 421. Therefore, the 7 height …
FIG. 12.
FIG. 13) of the metal holder 310. Herein, the insulation layer 330 may have a thickness greater than the height of the emitter plate 320 protruding from the …
FIG. 14, a gate electrode 340 is prepared. The gate electrode 340 20 includes a gate supporting member 341 and a graphene gate 342 attached onto the gate …
FIG. 15, initially, a growth substrate 500 is prepared. The growth substrate 500 is used to grow graphene thereon. The growth substrate 500 may include, for 5 …
FIG. 16, the growth substrate 500 is removed using a predetermined etchant and thus only the 15 graphene layer 522' is left in the etchant. [40] Referring to
FIG. 17, a metal film 521' is prepared. Herein, the metal film 521' may have a thickness capable of maintaining the shape thereof by itself. Referring to
FIG. 18, through hole 521'a is formed in the metal film 521'. The through hole 521'a may be formed based on, for example, punching or photo etching. The through …
FIG. 19, the graphene layer 522' is transferred onto the metal film 521'. Herein, the graphene layer 522' may be attached onto a surface of the metal film 521' …
FIG. 20. As described above, the emitter plate 520 may be easily produced. Although the graphene 30 layer 522' is transferred onto the metal film 521' having …
FIG. 21) of the metal film 641. Herein, the metal film 641 is used to grow graphene thereon. The graphene layer 642 may be formed by 5 growing graphene on the …
FIG. 22) of the metal film 641. The polymer layer 660 may include, for example, an oxidation- resistant polymer layer. Subsequently, a through hole 660a is …
FIG. 23, the metal film 641 exposed by the through hole 660a is selectively etched and removed. As such, a gate hole 641a may be formed in the 15 metal film 641 …
FIG. 24, the polymer layer 660 is removed using a predetermined etchant and thus the gate electrode 640 including the metal film 641 having the gate hole 641 a, …
FIG. 25 8 illustrates an example in which three emitter plates 220 are inserted into the metal holder 210, various numbers of emitter plates may be inserted …
FIG. 26, the growth substrate 600 is removed using a predetermined etchant and thus only the graphene layer 642 is left in the etchant. [47] Referring to
FIG. 27, a metal film 641 is prepared. Herein, the metal film 641 may have a thickness capable of maintaining the shape thereof by itself. Referring to
FIG. 28, a 10 gate hole 641a is formed in the metal film 641. The gate hole 641a may be formed based on, for example, punching or photo etching. The gate hole …
FIG. 29, the graphene layer 642 is transferred onto the metal film 641. Herein, the graphene layer 642 may be attached onto a surface of the metal film 641 to …
FIG. 30A. The emitter plate 720' includes an emitter supporting member 721' and a plurality of graphene emitters 722' attached onto a surface of the emitter …
FIG. 31 is an exploded perspective view of an electron emitting device array according to another example embodiment. BEST MODE [20] Hereinafter, the present …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An electron emitting device comprising: a metal holder having at least one slot; 5 at least one emitter plate inserted into the slot to protrude from a first surface of the metal holder, and comprising an emitter supporting member and a graphene emitter attached onto the emitter supporting member; an insulation layer provided on the first surface of the metal holder; and a gate electrode provided on the insulation layer and comprising a gate supporting 10 member and a graphene gate attached onto the gate supporting member.
The electron emitting device of claim 1, wherein the graphene emitter is provided perpendicularly to the first surface of the metal holder.
The electron emitting device of claim 1, wherein the gate supporting member comprises a metal film having a gate hole, and wherein the graphene gate is attached onto the metal film to cover the gate hole.
The electron emitting device of claim 1, wherein the gate supporting member comprises a metal mesh, and wherein the graphene gate is attached onto the metal mesh.
The electron emitting device of claim 1, wherein an anode electrode is provided above the gate electrode to be spaced apart from the gate electrode.
The electron emitting device of claim 1, wherein the emitter supporting 5 member is inserted into the slot and electrically connected to the metal holder.
The electron emitting device of claim 1, wherein each of the graphene emitter and the graphene gate comprises a graphene sheet having a monolayer or multilayer structure.
10 11. A method for manufacturing an electron emitting device, the method comprising: preparing a metal holder having a slot; preparing an emitter plate comprising an emitter supporting member and a graphene emitter attached onto the emitter supporting member; locating the metal holder on a supporter and then inserting the emitter plate into the slot of the metal holder; allow i ng the emitter plate to protrude from a first surface of the metal holder by a predetermined height; forming an insulation layer on the first surface of the metal holder; preparing a gate electrode comprising a gate supporting member and a graphene gate attached onto the gate supporting member; and providing the gate electrode on the insulation layer.
The method of claim 11, wherein the supporter comprises: 25 a first supporter comprising a first through hole having a width smaller than the width of the slot; and a second supporter stacked on the first supporter and comprising a second through hole having a width larger than the width of the slot.
The method of claim 11, wherein the graphene emitter is provided perpendicularly to the first surface of the metal holder.
The method of claim 11, wherein the preparing of the emitter plate comprises: 5 preparing a growth substrate and then forming a graphene layer on the growth substrate; removing the growth substrate; preparing a metal film and then forming a through hole in the metal film; transferring the graphene layer onto the metal film to cover the through hole; and 10 cu tt ing the metal film along a cu tt ing line passing through the through hole.
The method of claim 11, wherein the preparing of the emi tt er plate comprises: preparing a growth substrate and then forming a graphene layer on the growth 20 substrate; removing the growth substrate; preparing a metal mesh and then transferring the graphene layer onto the metal mesh; and cutt ing the metal mesh.
The method of claim 11, wherein the preparing of the gate electrode comprises: forming a graphene layer on a first surface of a metal film; forming a polymer layer on a second surface of the metal film and then pa tt erning the 30 polymer layer; forming a gate hole in the metal film by etching the second surface of the metal film exposed by the patterned polymer layer; and removing the pa tt erned polymer layer.
The method of claim 11, wherein the preparing of the gate electrode comprises: preparing a growth substrate and then forming a graphene layer on the growth substrate; 5 removing the growth substrate; preparing a metal film and then forming a gate hole in the metal film; and transferring the graphene layer onto the metal film to cover the gate hole.
The method of claim 11, wherein the preparing of the gate electrode 10 comprises: preparing a growth substrate and then forming a graphene layer on the growth substrate; removing the growth substrate; and preparing a metal mesh and then transferring the graphene layer onto the metal mesh.
An electron emitting device array comprising a plurality of electron emitting devices arranged in two dimensions, each of the electron emitting devices comprising: a metal holder having at least one slot; at least one emitter plate inserted into the slot to protrude from a first surface of the 20 metal holder, and comprising an emitter onto the emitter supporting member; an insulation holder; and a gate electrode provided on the member and a graphene gate attached onto the
The electron emitting device array of claim 22 perpendicularly to the first surface of the metal supporting member. 19 supporting member and a graphene emitter attached layer provided on the first surface of the metal insulation layer and comprising a gate supporting gate supporting member., wherein the graphene emitter is provided holder and provided at an edge of the emitter
Layer stacks claimed or described, ordered top of device to substrate.
electron emitting device
electron emitting device array
Materials described outside the worked examples.
graphene emitter
graphene gate
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1. The electron emitting devices may be independently driven to emit electrons. [52] Specifically, the electron emitting device array 800 includes a 11 …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Duration | 1800–7200 s | — |
Temperature |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,991,081Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1. The electron emitting devices may be independently driven to emit electrons. [52] Specifically, the electron emitting device array 800 includes a 11 …
FIG. 2 is a cross-sectional view of the electron emitting device 100 illustrated in
FIG. 3, a slot 1 10 a having a predetermined shape penetrates through the metal holder 110. Herein, the slot 1 10 a may be provided to penetrate between a first …
FIGS. 4A and 4B illustrate an example in which the graphene emitter 122 is attached onto a rear surface of the emitter supporting member 121. However, the …
FIG. 5. In this case, the graphene emitter 322 may be provided on a surface of the emitter supporting member 321 to cover the edge of the emitter supporting …
FIG. 6 is a bottom perspective view of a gate electrode of the electron emitting 20 device, according to an example embodiment. [11]
FIG. 7. In this case, the graphene gate 342 may be attached onto a surface of the gate supporting member 341. Then, the prepared gate electrode 340 is attached …
FIG. 8, the metal holder 210 includes a plurality of slots 210 a, and the emitter plates 220 are inserted into the slots 210a. Herein, the emitter plates 220 …
FIG. 9) of the metal holder 310. The slot 310a may be provided perpendicularly to the first surface (or the second surface) of the metal holder 310. The metal …
FIG. 10, first and second supporters 421 and 422 are sequentially provided on a base 410, and then the metal holder 310 is provided on the second supporter 422. …
FIG. 11) of the metal holder 310 to penetrate through the second through hole 422a and contact a top surface of the first supporter 421. Therefore, the 7 height …
FIG. 12.
FIG. 13) of the metal holder 310. Herein, the insulation layer 330 may have a thickness greater than the height of the emitter plate 320 protruding from the …
FIG. 14, a gate electrode 340 is prepared. The gate electrode 340 20 includes a gate supporting member 341 and a graphene gate 342 attached onto the gate …
FIG. 15, initially, a growth substrate 500 is prepared. The growth substrate 500 is used to grow graphene thereon. The growth substrate 500 may include, for 5 …
FIG. 16, the growth substrate 500 is removed using a predetermined etchant and thus only the 15 graphene layer 522' is left in the etchant. [40] Referring to
FIG. 17, a metal film 521' is prepared. Herein, the metal film 521' may have a thickness capable of maintaining the shape thereof by itself. Referring to
FIG. 18, through hole 521'a is formed in the metal film 521'. The through hole 521'a may be formed based on, for example, punching or photo etching. The through …
FIG. 19, the graphene layer 522' is transferred onto the metal film 521'. Herein, the graphene layer 522' may be attached onto a surface of the metal film 521' …
FIG. 20. As described above, the emitter plate 520 may be easily produced. Although the graphene 30 layer 522' is transferred onto the metal film 521' having …
FIG. 21) of the metal film 641. Herein, the metal film 641 is used to grow graphene thereon. The graphene layer 642 may be formed by 5 growing graphene on the …
FIG. 22) of the metal film 641. The polymer layer 660 may include, for example, an oxidation- resistant polymer layer. Subsequently, a through hole 660a is …
FIG. 23, the metal film 641 exposed by the through hole 660a is selectively etched and removed. As such, a gate hole 641a may be formed in the 15 metal film 641 …
FIG. 24, the polymer layer 660 is removed using a predetermined etchant and thus the gate electrode 640 including the metal film 641 having the gate hole 641 a, …
FIG. 25 8 illustrates an example in which three emitter plates 220 are inserted into the metal holder 210, various numbers of emitter plates may be inserted …
FIG. 26, the growth substrate 600 is removed using a predetermined etchant and thus only the graphene layer 642 is left in the etchant. [47] Referring to
FIG. 27, a metal film 641 is prepared. Herein, the metal film 641 may have a thickness capable of maintaining the shape thereof by itself. Referring to
FIG. 28, a 10 gate hole 641a is formed in the metal film 641. The gate hole 641a may be formed based on, for example, punching or photo etching. The gate hole …
FIG. 29, the graphene layer 642 is transferred onto the metal film 641. Herein, the graphene layer 642 may be attached onto a surface of the metal film 641 to …
FIG. 30A. The emitter plate 720' includes an emitter supporting member 721' and a plurality of graphene emitters 722' attached onto a surface of the emitter …
FIG. 31 is an exploded perspective view of an electron emitting device array according to another example embodiment. BEST MODE [20] Hereinafter, the present …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An electron emitting device comprising: a metal holder having at least one slot; 5 at least one emitter plate inserted into the slot to protrude from a first surface of the metal holder, and comprising an emitter supporting member and a graphene emitter attached onto the emitter supporting member; an insulation layer provided on the first surface of the metal holder; and a gate electrode provided on the insulation layer and comprising a gate supporting 10 member and a graphene gate attached onto the gate supporting member.
The electron emitting device of claim 1, wherein the graphene emitter is provided perpendicularly to the first surface of the metal holder.
The electron emitting device of claim 1, wherein the gate supporting member comprises a metal film having a gate hole, and wherein the graphene gate is attached onto the metal film to cover the gate hole.
The electron emitting device of claim 1, wherein the gate supporting member comprises a metal mesh, and wherein the graphene gate is attached onto the metal mesh.
The electron emitting device of claim 1, wherein an anode electrode is provided above the gate electrode to be spaced apart from the gate electrode.
The electron emitting device of claim 1, wherein the emitter supporting 5 member is inserted into the slot and electrically connected to the metal holder.
The electron emitting device of claim 1, wherein each of the graphene emitter and the graphene gate comprises a graphene sheet having a monolayer or multilayer structure.
10 11. A method for manufacturing an electron emitting device, the method comprising: preparing a metal holder having a slot; preparing an emitter plate comprising an emitter supporting member and a graphene emitter attached onto the emitter supporting member; locating the metal holder on a supporter and then inserting the emitter plate into the slot of the metal holder; allow i ng the emitter plate to protrude from a first surface of the metal holder by a predetermined height; forming an insulation layer on the first surface of the metal holder; preparing a gate electrode comprising a gate supporting member and a graphene gate attached onto the gate supporting member; and providing the gate electrode on the insulation layer.
The method of claim 11, wherein the supporter comprises: 25 a first supporter comprising a first through hole having a width smaller than the width of the slot; and a second supporter stacked on the first supporter and comprising a second through hole having a width larger than the width of the slot.
The method of claim 11, wherein the graphene emitter is provided perpendicularly to the first surface of the metal holder.
The method of claim 11, wherein the preparing of the emitter plate comprises: 5 preparing a growth substrate and then forming a graphene layer on the growth substrate; removing the growth substrate; preparing a metal film and then forming a through hole in the metal film; transferring the graphene layer onto the metal film to cover the through hole; and 10 cu tt ing the metal film along a cu tt ing line passing through the through hole.
The method of claim 11, wherein the preparing of the emi tt er plate comprises: preparing a growth substrate and then forming a graphene layer on the growth 20 substrate; removing the growth substrate; preparing a metal mesh and then transferring the graphene layer onto the metal mesh; and cutt ing the metal mesh.
The method of claim 11, wherein the preparing of the gate electrode comprises: forming a graphene layer on a first surface of a metal film; forming a polymer layer on a second surface of the metal film and then pa tt erning the 30 polymer layer; forming a gate hole in the metal film by etching the second surface of the metal film exposed by the patterned polymer layer; and removing the pa tt erned polymer layer.
The method of claim 11, wherein the preparing of the gate electrode comprises: preparing a growth substrate and then forming a graphene layer on the growth substrate; 5 removing the growth substrate; preparing a metal film and then forming a gate hole in the metal film; and transferring the graphene layer onto the metal film to cover the gate hole.
The method of claim 11, wherein the preparing of the gate electrode 10 comprises: preparing a growth substrate and then forming a graphene layer on the growth substrate; removing the growth substrate; and preparing a metal mesh and then transferring the graphene layer onto the metal mesh.
An electron emitting device array comprising a plurality of electron emitting devices arranged in two dimensions, each of the electron emitting devices comprising: a metal holder having at least one slot; at least one emitter plate inserted into the slot to protrude from a first surface of the 20 metal holder, and comprising an emitter onto the emitter supporting member; an insulation holder; and a gate electrode provided on the member and a graphene gate attached onto the
The electron emitting device array of claim 22 perpendicularly to the first surface of the metal supporting member. 19 supporting member and a graphene emitter attached layer provided on the first surface of the metal insulation layer and comprising a gate supporting gate supporting member., wherein the graphene emitter is provided holder and provided at an edge of the emitter
Layer stacks claimed or described, ordered top of device to substrate.
electron emitting device
electron emitting device array
Materials described outside the worked examples.
graphene emitter
graphene gate
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1. The electron emitting devices may be independently driven to emit electrons. [52] Specifically, the electron emitting device array 800 includes a 11 …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Duration | 1800–7200 s | — |
Temperature |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,991,081Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1. The electron emitting devices may be independently driven to emit electrons. [52] Specifically, the electron emitting device array 800 includes a 11 …
FIG. 2 is a cross-sectional view of the electron emitting device 100 illustrated in
FIG. 3, a slot 1 10 a having a predetermined shape penetrates through the metal holder 110. Herein, the slot 1 10 a may be provided to penetrate between a first …
FIGS. 4A and 4B illustrate an example in which the graphene emitter 122 is attached onto a rear surface of the emitter supporting member 121. However, the …
FIG. 5. In this case, the graphene emitter 322 may be provided on a surface of the emitter supporting member 321 to cover the edge of the emitter supporting …
FIG. 6 is a bottom perspective view of a gate electrode of the electron emitting 20 device, according to an example embodiment. [11]
FIG. 7. In this case, the graphene gate 342 may be attached onto a surface of the gate supporting member 341. Then, the prepared gate electrode 340 is attached …
FIG. 8, the metal holder 210 includes a plurality of slots 210 a, and the emitter plates 220 are inserted into the slots 210a. Herein, the emitter plates 220 …
FIG. 9) of the metal holder 310. The slot 310a may be provided perpendicularly to the first surface (or the second surface) of the metal holder 310. The metal …
FIG. 10, first and second supporters 421 and 422 are sequentially provided on a base 410, and then the metal holder 310 is provided on the second supporter 422. …
FIG. 11) of the metal holder 310 to penetrate through the second through hole 422a and contact a top surface of the first supporter 421. Therefore, the 7 height …
FIG. 12.
FIG. 13) of the metal holder 310. Herein, the insulation layer 330 may have a thickness greater than the height of the emitter plate 320 protruding from the …
FIG. 14, a gate electrode 340 is prepared. The gate electrode 340 20 includes a gate supporting member 341 and a graphene gate 342 attached onto the gate …
FIG. 15, initially, a growth substrate 500 is prepared. The growth substrate 500 is used to grow graphene thereon. The growth substrate 500 may include, for 5 …
FIG. 16, the growth substrate 500 is removed using a predetermined etchant and thus only the 15 graphene layer 522' is left in the etchant. [40] Referring to
FIG. 17, a metal film 521' is prepared. Herein, the metal film 521' may have a thickness capable of maintaining the shape thereof by itself. Referring to
FIG. 18, through hole 521'a is formed in the metal film 521'. The through hole 521'a may be formed based on, for example, punching or photo etching. The through …
FIG. 19, the graphene layer 522' is transferred onto the metal film 521'. Herein, the graphene layer 522' may be attached onto a surface of the metal film 521' …
FIG. 20. As described above, the emitter plate 520 may be easily produced. Although the graphene 30 layer 522' is transferred onto the metal film 521' having …
FIG. 21) of the metal film 641. Herein, the metal film 641 is used to grow graphene thereon. The graphene layer 642 may be formed by 5 growing graphene on the …
FIG. 22) of the metal film 641. The polymer layer 660 may include, for example, an oxidation- resistant polymer layer. Subsequently, a through hole 660a is …
FIG. 23, the metal film 641 exposed by the through hole 660a is selectively etched and removed. As such, a gate hole 641a may be formed in the 15 metal film 641 …
FIG. 24, the polymer layer 660 is removed using a predetermined etchant and thus the gate electrode 640 including the metal film 641 having the gate hole 641 a, …
FIG. 25 8 illustrates an example in which three emitter plates 220 are inserted into the metal holder 210, various numbers of emitter plates may be inserted …
FIG. 26, the growth substrate 600 is removed using a predetermined etchant and thus only the graphene layer 642 is left in the etchant. [47] Referring to
FIG. 27, a metal film 641 is prepared. Herein, the metal film 641 may have a thickness capable of maintaining the shape thereof by itself. Referring to
FIG. 28, a 10 gate hole 641a is formed in the metal film 641. The gate hole 641a may be formed based on, for example, punching or photo etching. The gate hole …
FIG. 29, the graphene layer 642 is transferred onto the metal film 641. Herein, the graphene layer 642 may be attached onto a surface of the metal film 641 to …
FIG. 30A. The emitter plate 720' includes an emitter supporting member 721' and a plurality of graphene emitters 722' attached onto a surface of the emitter …
FIG. 31 is an exploded perspective view of an electron emitting device array according to another example embodiment. BEST MODE [20] Hereinafter, the present …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An electron emitting device comprising: a metal holder having at least one slot; 5 at least one emitter plate inserted into the slot to protrude from a first surface of the metal holder, and comprising an emitter supporting member and a graphene emitter attached onto the emitter supporting member; an insulation layer provided on the first surface of the metal holder; and a gate electrode provided on the insulation layer and comprising a gate supporting 10 member and a graphene gate attached onto the gate supporting member.
The electron emitting device of claim 1, wherein the graphene emitter is provided perpendicularly to the first surface of the metal holder.
The electron emitting device of claim 1, wherein the gate supporting member comprises a metal film having a gate hole, and wherein the graphene gate is attached onto the metal film to cover the gate hole.
The electron emitting device of claim 1, wherein the gate supporting member comprises a metal mesh, and wherein the graphene gate is attached onto the metal mesh.
The electron emitting device of claim 1, wherein an anode electrode is provided above the gate electrode to be spaced apart from the gate electrode.
The electron emitting device of claim 1, wherein the emitter supporting 5 member is inserted into the slot and electrically connected to the metal holder.
The electron emitting device of claim 1, wherein each of the graphene emitter and the graphene gate comprises a graphene sheet having a monolayer or multilayer structure.
10 11. A method for manufacturing an electron emitting device, the method comprising: preparing a metal holder having a slot; preparing an emitter plate comprising an emitter supporting member and a graphene emitter attached onto the emitter supporting member; locating the metal holder on a supporter and then inserting the emitter plate into the slot of the metal holder; allow i ng the emitter plate to protrude from a first surface of the metal holder by a predetermined height; forming an insulation layer on the first surface of the metal holder; preparing a gate electrode comprising a gate supporting member and a graphene gate attached onto the gate supporting member; and providing the gate electrode on the insulation layer.
The method of claim 11, wherein the supporter comprises: 25 a first supporter comprising a first through hole having a width smaller than the width of the slot; and a second supporter stacked on the first supporter and comprising a second through hole having a width larger than the width of the slot.
The method of claim 11, wherein the graphene emitter is provided perpendicularly to the first surface of the metal holder.
The method of claim 11, wherein the preparing of the emitter plate comprises: 5 preparing a growth substrate and then forming a graphene layer on the growth substrate; removing the growth substrate; preparing a metal film and then forming a through hole in the metal film; transferring the graphene layer onto the metal film to cover the through hole; and 10 cu tt ing the metal film along a cu tt ing line passing through the through hole.
The method of claim 11, wherein the preparing of the emi tt er plate comprises: preparing a growth substrate and then forming a graphene layer on the growth 20 substrate; removing the growth substrate; preparing a metal mesh and then transferring the graphene layer onto the metal mesh; and cutt ing the metal mesh.
The method of claim 11, wherein the preparing of the gate electrode comprises: forming a graphene layer on a first surface of a metal film; forming a polymer layer on a second surface of the metal film and then pa tt erning the 30 polymer layer; forming a gate hole in the metal film by etching the second surface of the metal film exposed by the patterned polymer layer; and removing the pa tt erned polymer layer.
The method of claim 11, wherein the preparing of the gate electrode comprises: preparing a growth substrate and then forming a graphene layer on the growth substrate; 5 removing the growth substrate; preparing a metal film and then forming a gate hole in the metal film; and transferring the graphene layer onto the metal film to cover the gate hole.
The method of claim 11, wherein the preparing of the gate electrode 10 comprises: preparing a growth substrate and then forming a graphene layer on the growth substrate; removing the growth substrate; and preparing a metal mesh and then transferring the graphene layer onto the metal mesh.
An electron emitting device array comprising a plurality of electron emitting devices arranged in two dimensions, each of the electron emitting devices comprising: a metal holder having at least one slot; at least one emitter plate inserted into the slot to protrude from a first surface of the 20 metal holder, and comprising an emitter onto the emitter supporting member; an insulation holder; and a gate electrode provided on the member and a graphene gate attached onto the
The electron emitting device array of claim 22 perpendicularly to the first surface of the metal supporting member. 19 supporting member and a graphene emitter attached layer provided on the first surface of the metal insulation layer and comprising a gate supporting gate supporting member., wherein the graphene emitter is provided holder and provided at an edge of the emitter
Layer stacks claimed or described, ordered top of device to substrate.
electron emitting device
electron emitting device array
Materials described outside the worked examples.
graphene emitter
graphene gate
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1. The electron emitting devices may be independently driven to emit electrons. [52] Specifically, the electron emitting device array 800 includes a 11 …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Duration | 1800–7200 s | — |
Temperature |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,991,081Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1. The electron emitting devices may be independently driven to emit electrons. [52] Specifically, the electron emitting device array 800 includes a 11 …
FIG. 2 is a cross-sectional view of the electron emitting device 100 illustrated in
FIG. 3, a slot 1 10 a having a predetermined shape penetrates through the metal holder 110. Herein, the slot 1 10 a may be provided to penetrate between a first …
FIGS. 4A and 4B illustrate an example in which the graphene emitter 122 is attached onto a rear surface of the emitter supporting member 121. However, the …
FIG. 5. In this case, the graphene emitter 322 may be provided on a surface of the emitter supporting member 321 to cover the edge of the emitter supporting …
FIG. 6 is a bottom perspective view of a gate electrode of the electron emitting 20 device, according to an example embodiment. [11]
FIG. 7. In this case, the graphene gate 342 may be attached onto a surface of the gate supporting member 341. Then, the prepared gate electrode 340 is attached …
FIG. 8, the metal holder 210 includes a plurality of slots 210 a, and the emitter plates 220 are inserted into the slots 210a. Herein, the emitter plates 220 …
FIG. 9) of the metal holder 310. The slot 310a may be provided perpendicularly to the first surface (or the second surface) of the metal holder 310. The metal …
FIG. 10, first and second supporters 421 and 422 are sequentially provided on a base 410, and then the metal holder 310 is provided on the second supporter 422. …
FIG. 11) of the metal holder 310 to penetrate through the second through hole 422a and contact a top surface of the first supporter 421. Therefore, the 7 height …
FIG. 12.
FIG. 13) of the metal holder 310. Herein, the insulation layer 330 may have a thickness greater than the height of the emitter plate 320 protruding from the …
FIG. 14, a gate electrode 340 is prepared. The gate electrode 340 20 includes a gate supporting member 341 and a graphene gate 342 attached onto the gate …
FIG. 15, initially, a growth substrate 500 is prepared. The growth substrate 500 is used to grow graphene thereon. The growth substrate 500 may include, for 5 …
FIG. 16, the growth substrate 500 is removed using a predetermined etchant and thus only the 15 graphene layer 522' is left in the etchant. [40] Referring to
FIG. 17, a metal film 521' is prepared. Herein, the metal film 521' may have a thickness capable of maintaining the shape thereof by itself. Referring to
FIG. 18, through hole 521'a is formed in the metal film 521'. The through hole 521'a may be formed based on, for example, punching or photo etching. The through …
FIG. 19, the graphene layer 522' is transferred onto the metal film 521'. Herein, the graphene layer 522' may be attached onto a surface of the metal film 521' …
FIG. 20. As described above, the emitter plate 520 may be easily produced. Although the graphene 30 layer 522' is transferred onto the metal film 521' having …
FIG. 21) of the metal film 641. Herein, the metal film 641 is used to grow graphene thereon. The graphene layer 642 may be formed by 5 growing graphene on the …
FIG. 22) of the metal film 641. The polymer layer 660 may include, for example, an oxidation- resistant polymer layer. Subsequently, a through hole 660a is …
FIG. 23, the metal film 641 exposed by the through hole 660a is selectively etched and removed. As such, a gate hole 641a may be formed in the 15 metal film 641 …
FIG. 24, the polymer layer 660 is removed using a predetermined etchant and thus the gate electrode 640 including the metal film 641 having the gate hole 641 a, …
FIG. 25 8 illustrates an example in which three emitter plates 220 are inserted into the metal holder 210, various numbers of emitter plates may be inserted …
FIG. 26, the growth substrate 600 is removed using a predetermined etchant and thus only the graphene layer 642 is left in the etchant. [47] Referring to
FIG. 27, a metal film 641 is prepared. Herein, the metal film 641 may have a thickness capable of maintaining the shape thereof by itself. Referring to
FIG. 28, a 10 gate hole 641a is formed in the metal film 641. The gate hole 641a may be formed based on, for example, punching or photo etching. The gate hole …
FIG. 29, the graphene layer 642 is transferred onto the metal film 641. Herein, the graphene layer 642 may be attached onto a surface of the metal film 641 to …
FIG. 30A. The emitter plate 720' includes an emitter supporting member 721' and a plurality of graphene emitters 722' attached onto a surface of the emitter …
FIG. 31 is an exploded perspective view of an electron emitting device array according to another example embodiment. BEST MODE [20] Hereinafter, the present …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An electron emitting device comprising: a metal holder having at least one slot; 5 at least one emitter plate inserted into the slot to protrude from a first surface of the metal holder, and comprising an emitter supporting member and a graphene emitter attached onto the emitter supporting member; an insulation layer provided on the first surface of the metal holder; and a gate electrode provided on the insulation layer and comprising a gate supporting 10 member and a graphene gate attached onto the gate supporting member.
The electron emitting device of claim 1, wherein the graphene emitter is provided perpendicularly to the first surface of the metal holder.
The electron emitting device of claim 1, wherein the gate supporting member comprises a metal film having a gate hole, and wherein the graphene gate is attached onto the metal film to cover the gate hole.
The electron emitting device of claim 1, wherein the gate supporting member comprises a metal mesh, and wherein the graphene gate is attached onto the metal mesh.
The electron emitting device of claim 1, wherein an anode electrode is provided above the gate electrode to be spaced apart from the gate electrode.
The electron emitting device of claim 1, wherein the emitter supporting 5 member is inserted into the slot and electrically connected to the metal holder.
The electron emitting device of claim 1, wherein each of the graphene emitter and the graphene gate comprises a graphene sheet having a monolayer or multilayer structure.
10 11. A method for manufacturing an electron emitting device, the method comprising: preparing a metal holder having a slot; preparing an emitter plate comprising an emitter supporting member and a graphene emitter attached onto the emitter supporting member; locating the metal holder on a supporter and then inserting the emitter plate into the slot of the metal holder; allow i ng the emitter plate to protrude from a first surface of the metal holder by a predetermined height; forming an insulation layer on the first surface of the metal holder; preparing a gate electrode comprising a gate supporting member and a graphene gate attached onto the gate supporting member; and providing the gate electrode on the insulation layer.
The method of claim 11, wherein the supporter comprises: 25 a first supporter comprising a first through hole having a width smaller than the width of the slot; and a second supporter stacked on the first supporter and comprising a second through hole having a width larger than the width of the slot.
The method of claim 11, wherein the graphene emitter is provided perpendicularly to the first surface of the metal holder.
The method of claim 11, wherein the preparing of the emitter plate comprises: 5 preparing a growth substrate and then forming a graphene layer on the growth substrate; removing the growth substrate; preparing a metal film and then forming a through hole in the metal film; transferring the graphene layer onto the metal film to cover the through hole; and 10 cu tt ing the metal film along a cu tt ing line passing through the through hole.
The method of claim 11, wherein the preparing of the emi tt er plate comprises: preparing a growth substrate and then forming a graphene layer on the growth 20 substrate; removing the growth substrate; preparing a metal mesh and then transferring the graphene layer onto the metal mesh; and cutt ing the metal mesh.
The method of claim 11, wherein the preparing of the gate electrode comprises: forming a graphene layer on a first surface of a metal film; forming a polymer layer on a second surface of the metal film and then pa tt erning the 30 polymer layer; forming a gate hole in the metal film by etching the second surface of the metal film exposed by the patterned polymer layer; and removing the pa tt erned polymer layer.
The method of claim 11, wherein the preparing of the gate electrode comprises: preparing a growth substrate and then forming a graphene layer on the growth substrate; 5 removing the growth substrate; preparing a metal film and then forming a gate hole in the metal film; and transferring the graphene layer onto the metal film to cover the gate hole.
The method of claim 11, wherein the preparing of the gate electrode 10 comprises: preparing a growth substrate and then forming a graphene layer on the growth substrate; removing the growth substrate; and preparing a metal mesh and then transferring the graphene layer onto the metal mesh.
An electron emitting device array comprising a plurality of electron emitting devices arranged in two dimensions, each of the electron emitting devices comprising: a metal holder having at least one slot; at least one emitter plate inserted into the slot to protrude from a first surface of the 20 metal holder, and comprising an emitter onto the emitter supporting member; an insulation holder; and a gate electrode provided on the member and a graphene gate attached onto the
The electron emitting device array of claim 22 perpendicularly to the first surface of the metal supporting member. 19 supporting member and a graphene emitter attached layer provided on the first surface of the metal insulation layer and comprising a gate supporting gate supporting member., wherein the graphene emitter is provided holder and provided at an edge of the emitter
Layer stacks claimed or described, ordered top of device to substrate.
electron emitting device
electron emitting device array
Materials described outside the worked examples.
graphene emitter
graphene gate
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1. The electron emitting devices may be independently driven to emit electrons. [52] Specifically, the electron emitting device array 800 includes a 11 …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Duration | 1800–7200 s | — |
Temperature |
Related documents with shared materials, methods, properties, or citations.
graphene layer (emitter fabrication)
growth substrate
FIG. 9) of the metal holder 310. The slot 310a may be provided perpendicularly to the first surface (or the second surface) of the metal holder 310. The metal …
FIG. 13) of the metal holder 310. Herein, the insulation layer 330 may have a thickness greater than the height of the emitter plate 320 protruding from the …
FIG. 17, a metal film 521' is prepared. Herein, the metal film 521' may have a thickness capable of maintaining the shape thereof by itself. Referring to
FIG. 27, a metal film 641 is prepared. Herein, the metal film 641 may have a thickness capable of maintaining the shape thereof by itself. Referring to
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graphene layer (emitter fabrication)
growth substrate
FIG. 9) of the metal holder 310. The slot 310a may be provided perpendicularly to the first surface (or the second surface) of the metal holder 310. The metal …
FIG. 13) of the metal holder 310. Herein, the insulation layer 330 may have a thickness greater than the height of the emitter plate 320 protruding from the …
FIG. 17, a metal film 521' is prepared. Herein, the metal film 521' may have a thickness capable of maintaining the shape thereof by itself. Referring to
FIG. 27, a metal film 641 is prepared. Herein, the metal film 641 may have a thickness capable of maintaining the shape thereof by itself. Referring to
| — |
graphene layer (emitter fabrication)
growth substrate
FIG. 9) of the metal holder 310. The slot 310a may be provided perpendicularly to the first surface (or the second surface) of the metal holder 310. The metal …
FIG. 13) of the metal holder 310. Herein, the insulation layer 330 may have a thickness greater than the height of the emitter plate 320 protruding from the …
FIG. 17, a metal film 521' is prepared. Herein, the metal film 521' may have a thickness capable of maintaining the shape thereof by itself. Referring to
FIG. 27, a metal film 641 is prepared. Herein, the metal film 641 may have a thickness capable of maintaining the shape thereof by itself. Referring to
| — |
graphene layer (emitter fabrication)
growth substrate
FIG. 9) of the metal holder 310. The slot 310a may be provided perpendicularly to the first surface (or the second surface) of the metal holder 310. The metal …
FIG. 13) of the metal holder 310. Herein, the insulation layer 330 may have a thickness greater than the height of the emitter plate 320 protruding from the …
FIG. 17, a metal film 521' is prepared. Herein, the metal film 521' may have a thickness capable of maintaining the shape thereof by itself. Referring to
FIG. 27, a metal film 641 is prepared. Herein, the metal film 641 may have a thickness capable of maintaining the shape thereof by itself. Referring to
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