Patent
US 10,763,110METHOD AND SYSTEM FOR FORMING DOPED REGIONS BY DIFFUSION IN GALLIUM NITRIDE MATERIALS
Ozgur Aktas, Vladimir Odnoblyudov, Cem Basceri
QROMIS, Inc.·US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 10,763,110Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a simplified schematic cross-sectional diagram illustrating a diffused region in GaN materials according to an embodiment of the present invention. As …
FIG. 2C. Such lateral extension under the mask 250 usually does not occur in an ion implantation process. Although p-type doping of an undoped region is …
FIG. 3B. The dept h of the diffusion and the ability to control the diffusion depth and concentration as a function of depth is illustrated by this data. [0043]
FIG. 4B represents SIMS data for magnesium and aluminum concentration collected after diffusion of magnesium into an epitaxial AlGaN layer that was about 20 nm …
FIGS. 5 A-5 C are simplified schematic cross-sectional diagrams illustrating intermediate steps in a method of forming doped regions in GaN materials by …
FIG. 6A is a simplified flowchart illustrating a method 600 of forming doped regions by diffusion in gallium nitride materials according to some embodiments of …
FIG. 7A is a simplified flowchart illustrating a method 700 of forming doped regions by diffusion in gallium nitride materials according to some other embodiments …
FIG. 8. If an engineered substrate structure is utilized, it may include a ceramic substrate with a thin silicon (Si) layer formed thereon. The substrate …
FIG. 9 is a simplified schematic cross-sectional diagram illustrating a vertical p-n diode including a diffusion doped active region formed on an engineered …
FIG. 10. After diffusion has been achieved, the magnesium- containing GaN layer and the mask may be removed in order to form ohmic contacts 1030a and 1030b to …
FIG. 11 illustrates schematically a cross-sectional view of a vertical MPS diode with junction termination extensions according to an embodiment of the present …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of forming doped regions by diffusion in gallium nitride materials, the method comprising: providing a substrate structure including a gallium nitride layer; forming a mask on the gallium nitride layer, the mask exposing one or more portions of a top surface of the gallium nitride layer; depositing a magnesium-containing gallium nitride layer on the one or more portions of the top surface of the gallium nitride layer at a temperature ranging from about 900 0 C to about 1100 °C; concurrently with depositing the magnesium-containing gallium nitride layer, forming one or more magnesium-doped regions in the gallium nitride layer by diffusing magnesium into the gallium nitride layer through the one or more portions, wherein the magnesium-containing gallium nitride layer provides a source of magnesium dopants; removing the magnesium-containing gallium nitride layer; and removing the mask. Currently amended
The method of claim 1 wherein depositing the magnesium-containing gallium nitride layer is performed in a thin film deposition chamber. Original
The method of claim 1 wherein depositing the magnesium-containing gallium nitride layer is performed at a temperature ranging from about [[900]] 1000 0 C to about 1100 0 C. Currently amended
The method of claim 1 wherein the magnesium- containing gallium nitride layer has a magnesium density ranging from about 1x 10 19 cm- 3 to about 1x10 20 cm⁻³ Original
The method of claim 1 wherein the substrate structure comprises: a buffer layer formed on a substrate; a first epitaxial gallium nitride layer formed on the buffer layer; and a second epitaxial gallium nitride layer formed on the first epitaxial gallium nitride layer; wherein the one or more magnesium-doped regions are formed in the second epitaxial gallium nitride layer. Original
The method of claim 1 wherein removing the magnesium- containing gallium nitride layer comprises removing an entirety of the magnesium-containing gallium nitride layer. New
A method of forming doped regions in gallium nitride materials, the method comprising: providing a gallium nitride substrate structure, the gallium nitride substrate structure including: a buffer layer formed on a substrate; a first epitaxial gallium nitride layer formed on the buffer layer; a second epitaxial gallium nitride layer formed on the first epitaxial gallium nitride layer; and an epitaxial aluminum gallium nitride layer formed on the second epitaxial gallium nitride layer; forming a mask on the epitaxial aluminum gallium nitride layer, the mask exposing one or more portions of a top surface of the epitaxial aluminum gallium nitride layer; depositing a magnesium-containing gallium nitride layer on the one or more portions of the top surface of the epitaxial aluminum gallium nitride layer; concurrently with depositing the magnesium-containing gallium nitride layer, forming one or more magnesium-doped regions in the epitaxial aluminum gallium nitride layer by diffusing magnesium into the epitaxial aluminum gallium nitride layer through the one or more portions, wherein the magnesium-containing gallium nitride layer provides a source of magnesium dopants; removing the magnesium-containing gallium nitride layer; and removing the mask. Original
The method of claim 13 wherein depositing the magnesium-containing gallium nitride layer is performed in a thin film deposition chamber. Original
The method of claim 13 wherein depositing the magnesium-containing gallium nitride layer is performed at a temperature ranging from about 900 0 C to about 1100 0 C. Original
The method of claim 13 wherein the magnesium- containing gallium nitride layer has a magnesium density ranging from about 1x 10 19 cm- 3 to about 1x 10 1 9 c m -3 Original
The method of claim 13 wherein the substrate comprises: a polycrystalline ceramic core; a barrier layer encapsulating the polycrystalline ceramic core; a bonding layer coupled to the barrier layer; and a substantially single crystalline layer coupled to the bonding layer. Original
The method of claim 13 wherein the second epitaxial gallium nitride layer is undoped. Original
Layer stacks claimed or described, ordered top of device to substrate.
GaN substrate structure with buffer and epitaxial layers
engineered substrate
Materials described outside the worked examples.
first epitaxial gallium nitride layer (N-type doped)
GaN
magnesium-containing gallium nitride layer
GaN:Mg
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 is a simplified schematic cross-sectional diagram illustrating a diffused region in GaN materials according to an embodiment of the present invention. As …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 900–1100 °C | — |
Temperature |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,763,110Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a simplified schematic cross-sectional diagram illustrating a diffused region in GaN materials according to an embodiment of the present invention. As …
FIG. 2C. Such lateral extension under the mask 250 usually does not occur in an ion implantation process. Although p-type doping of an undoped region is …
FIG. 3B. The dept h of the diffusion and the ability to control the diffusion depth and concentration as a function of depth is illustrated by this data. [0043]
FIG. 4B represents SIMS data for magnesium and aluminum concentration collected after diffusion of magnesium into an epitaxial AlGaN layer that was about 20 nm …
FIGS. 5 A-5 C are simplified schematic cross-sectional diagrams illustrating intermediate steps in a method of forming doped regions in GaN materials by …
FIG. 6A is a simplified flowchart illustrating a method 600 of forming doped regions by diffusion in gallium nitride materials according to some embodiments of …
FIG. 7A is a simplified flowchart illustrating a method 700 of forming doped regions by diffusion in gallium nitride materials according to some other embodiments …
FIG. 8. If an engineered substrate structure is utilized, it may include a ceramic substrate with a thin silicon (Si) layer formed thereon. The substrate …
FIG. 9 is a simplified schematic cross-sectional diagram illustrating a vertical p-n diode including a diffusion doped active region formed on an engineered …
FIG. 10. After diffusion has been achieved, the magnesium- containing GaN layer and the mask may be removed in order to form ohmic contacts 1030a and 1030b to …
FIG. 11 illustrates schematically a cross-sectional view of a vertical MPS diode with junction termination extensions according to an embodiment of the present …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of forming doped regions by diffusion in gallium nitride materials, the method comprising: providing a substrate structure including a gallium nitride layer; forming a mask on the gallium nitride layer, the mask exposing one or more portions of a top surface of the gallium nitride layer; depositing a magnesium-containing gallium nitride layer on the one or more portions of the top surface of the gallium nitride layer at a temperature ranging from about 900 0 C to about 1100 °C; concurrently with depositing the magnesium-containing gallium nitride layer, forming one or more magnesium-doped regions in the gallium nitride layer by diffusing magnesium into the gallium nitride layer through the one or more portions, wherein the magnesium-containing gallium nitride layer provides a source of magnesium dopants; removing the magnesium-containing gallium nitride layer; and removing the mask. Currently amended
The method of claim 1 wherein depositing the magnesium-containing gallium nitride layer is performed in a thin film deposition chamber. Original
The method of claim 1 wherein depositing the magnesium-containing gallium nitride layer is performed at a temperature ranging from about [[900]] 1000 0 C to about 1100 0 C. Currently amended
The method of claim 1 wherein the magnesium- containing gallium nitride layer has a magnesium density ranging from about 1x 10 19 cm- 3 to about 1x10 20 cm⁻³ Original
The method of claim 1 wherein the substrate structure comprises: a buffer layer formed on a substrate; a first epitaxial gallium nitride layer formed on the buffer layer; and a second epitaxial gallium nitride layer formed on the first epitaxial gallium nitride layer; wherein the one or more magnesium-doped regions are formed in the second epitaxial gallium nitride layer. Original
The method of claim 1 wherein removing the magnesium- containing gallium nitride layer comprises removing an entirety of the magnesium-containing gallium nitride layer. New
A method of forming doped regions in gallium nitride materials, the method comprising: providing a gallium nitride substrate structure, the gallium nitride substrate structure including: a buffer layer formed on a substrate; a first epitaxial gallium nitride layer formed on the buffer layer; a second epitaxial gallium nitride layer formed on the first epitaxial gallium nitride layer; and an epitaxial aluminum gallium nitride layer formed on the second epitaxial gallium nitride layer; forming a mask on the epitaxial aluminum gallium nitride layer, the mask exposing one or more portions of a top surface of the epitaxial aluminum gallium nitride layer; depositing a magnesium-containing gallium nitride layer on the one or more portions of the top surface of the epitaxial aluminum gallium nitride layer; concurrently with depositing the magnesium-containing gallium nitride layer, forming one or more magnesium-doped regions in the epitaxial aluminum gallium nitride layer by diffusing magnesium into the epitaxial aluminum gallium nitride layer through the one or more portions, wherein the magnesium-containing gallium nitride layer provides a source of magnesium dopants; removing the magnesium-containing gallium nitride layer; and removing the mask. Original
The method of claim 13 wherein depositing the magnesium-containing gallium nitride layer is performed in a thin film deposition chamber. Original
The method of claim 13 wherein depositing the magnesium-containing gallium nitride layer is performed at a temperature ranging from about 900 0 C to about 1100 0 C. Original
The method of claim 13 wherein the magnesium- containing gallium nitride layer has a magnesium density ranging from about 1x 10 19 cm- 3 to about 1x 10 1 9 c m -3 Original
The method of claim 13 wherein the substrate comprises: a polycrystalline ceramic core; a barrier layer encapsulating the polycrystalline ceramic core; a bonding layer coupled to the barrier layer; and a substantially single crystalline layer coupled to the bonding layer. Original
The method of claim 13 wherein the second epitaxial gallium nitride layer is undoped. Original
Layer stacks claimed or described, ordered top of device to substrate.
GaN substrate structure with buffer and epitaxial layers
engineered substrate
Materials described outside the worked examples.
first epitaxial gallium nitride layer (N-type doped)
GaN
magnesium-containing gallium nitride layer
GaN:Mg
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 is a simplified schematic cross-sectional diagram illustrating a diffused region in GaN materials according to an embodiment of the present invention. As …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 900–1100 °C | — |
Temperature |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,763,110Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a simplified schematic cross-sectional diagram illustrating a diffused region in GaN materials according to an embodiment of the present invention. As …
FIG. 2C. Such lateral extension under the mask 250 usually does not occur in an ion implantation process. Although p-type doping of an undoped region is …
FIG. 3B. The dept h of the diffusion and the ability to control the diffusion depth and concentration as a function of depth is illustrated by this data. [0043]
FIG. 4B represents SIMS data for magnesium and aluminum concentration collected after diffusion of magnesium into an epitaxial AlGaN layer that was about 20 nm …
FIGS. 5 A-5 C are simplified schematic cross-sectional diagrams illustrating intermediate steps in a method of forming doped regions in GaN materials by …
FIG. 6A is a simplified flowchart illustrating a method 600 of forming doped regions by diffusion in gallium nitride materials according to some embodiments of …
FIG. 7A is a simplified flowchart illustrating a method 700 of forming doped regions by diffusion in gallium nitride materials according to some other embodiments …
FIG. 8. If an engineered substrate structure is utilized, it may include a ceramic substrate with a thin silicon (Si) layer formed thereon. The substrate …
FIG. 9 is a simplified schematic cross-sectional diagram illustrating a vertical p-n diode including a diffusion doped active region formed on an engineered …
FIG. 10. After diffusion has been achieved, the magnesium- containing GaN layer and the mask may be removed in order to form ohmic contacts 1030a and 1030b to …
FIG. 11 illustrates schematically a cross-sectional view of a vertical MPS diode with junction termination extensions according to an embodiment of the present …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of forming doped regions by diffusion in gallium nitride materials, the method comprising: providing a substrate structure including a gallium nitride layer; forming a mask on the gallium nitride layer, the mask exposing one or more portions of a top surface of the gallium nitride layer; depositing a magnesium-containing gallium nitride layer on the one or more portions of the top surface of the gallium nitride layer at a temperature ranging from about 900 0 C to about 1100 °C; concurrently with depositing the magnesium-containing gallium nitride layer, forming one or more magnesium-doped regions in the gallium nitride layer by diffusing magnesium into the gallium nitride layer through the one or more portions, wherein the magnesium-containing gallium nitride layer provides a source of magnesium dopants; removing the magnesium-containing gallium nitride layer; and removing the mask. Currently amended
The method of claim 1 wherein depositing the magnesium-containing gallium nitride layer is performed in a thin film deposition chamber. Original
The method of claim 1 wherein depositing the magnesium-containing gallium nitride layer is performed at a temperature ranging from about [[900]] 1000 0 C to about 1100 0 C. Currently amended
The method of claim 1 wherein the magnesium- containing gallium nitride layer has a magnesium density ranging from about 1x 10 19 cm- 3 to about 1x10 20 cm⁻³ Original
The method of claim 1 wherein the substrate structure comprises: a buffer layer formed on a substrate; a first epitaxial gallium nitride layer formed on the buffer layer; and a second epitaxial gallium nitride layer formed on the first epitaxial gallium nitride layer; wherein the one or more magnesium-doped regions are formed in the second epitaxial gallium nitride layer. Original
The method of claim 1 wherein removing the magnesium- containing gallium nitride layer comprises removing an entirety of the magnesium-containing gallium nitride layer. New
A method of forming doped regions in gallium nitride materials, the method comprising: providing a gallium nitride substrate structure, the gallium nitride substrate structure including: a buffer layer formed on a substrate; a first epitaxial gallium nitride layer formed on the buffer layer; a second epitaxial gallium nitride layer formed on the first epitaxial gallium nitride layer; and an epitaxial aluminum gallium nitride layer formed on the second epitaxial gallium nitride layer; forming a mask on the epitaxial aluminum gallium nitride layer, the mask exposing one or more portions of a top surface of the epitaxial aluminum gallium nitride layer; depositing a magnesium-containing gallium nitride layer on the one or more portions of the top surface of the epitaxial aluminum gallium nitride layer; concurrently with depositing the magnesium-containing gallium nitride layer, forming one or more magnesium-doped regions in the epitaxial aluminum gallium nitride layer by diffusing magnesium into the epitaxial aluminum gallium nitride layer through the one or more portions, wherein the magnesium-containing gallium nitride layer provides a source of magnesium dopants; removing the magnesium-containing gallium nitride layer; and removing the mask. Original
The method of claim 13 wherein depositing the magnesium-containing gallium nitride layer is performed in a thin film deposition chamber. Original
The method of claim 13 wherein depositing the magnesium-containing gallium nitride layer is performed at a temperature ranging from about 900 0 C to about 1100 0 C. Original
The method of claim 13 wherein the magnesium- containing gallium nitride layer has a magnesium density ranging from about 1x 10 19 cm- 3 to about 1x 10 1 9 c m -3 Original
The method of claim 13 wherein the substrate comprises: a polycrystalline ceramic core; a barrier layer encapsulating the polycrystalline ceramic core; a bonding layer coupled to the barrier layer; and a substantially single crystalline layer coupled to the bonding layer. Original
The method of claim 13 wherein the second epitaxial gallium nitride layer is undoped. Original
Layer stacks claimed or described, ordered top of device to substrate.
GaN substrate structure with buffer and epitaxial layers
engineered substrate
Materials described outside the worked examples.
first epitaxial gallium nitride layer (N-type doped)
GaN
magnesium-containing gallium nitride layer
GaN:Mg
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 is a simplified schematic cross-sectional diagram illustrating a diffused region in GaN materials according to an embodiment of the present invention. As …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 900–1100 °C | — |
Temperature |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,763,110Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a simplified schematic cross-sectional diagram illustrating a diffused region in GaN materials according to an embodiment of the present invention. As …
FIG. 2C. Such lateral extension under the mask 250 usually does not occur in an ion implantation process. Although p-type doping of an undoped region is …
FIG. 3B. The dept h of the diffusion and the ability to control the diffusion depth and concentration as a function of depth is illustrated by this data. [0043]
FIG. 4B represents SIMS data for magnesium and aluminum concentration collected after diffusion of magnesium into an epitaxial AlGaN layer that was about 20 nm …
FIGS. 5 A-5 C are simplified schematic cross-sectional diagrams illustrating intermediate steps in a method of forming doped regions in GaN materials by …
FIG. 6A is a simplified flowchart illustrating a method 600 of forming doped regions by diffusion in gallium nitride materials according to some embodiments of …
FIG. 7A is a simplified flowchart illustrating a method 700 of forming doped regions by diffusion in gallium nitride materials according to some other embodiments …
FIG. 8. If an engineered substrate structure is utilized, it may include a ceramic substrate with a thin silicon (Si) layer formed thereon. The substrate …
FIG. 9 is a simplified schematic cross-sectional diagram illustrating a vertical p-n diode including a diffusion doped active region formed on an engineered …
FIG. 10. After diffusion has been achieved, the magnesium- containing GaN layer and the mask may be removed in order to form ohmic contacts 1030a and 1030b to …
FIG. 11 illustrates schematically a cross-sectional view of a vertical MPS diode with junction termination extensions according to an embodiment of the present …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of forming doped regions by diffusion in gallium nitride materials, the method comprising: providing a substrate structure including a gallium nitride layer; forming a mask on the gallium nitride layer, the mask exposing one or more portions of a top surface of the gallium nitride layer; depositing a magnesium-containing gallium nitride layer on the one or more portions of the top surface of the gallium nitride layer at a temperature ranging from about 900 0 C to about 1100 °C; concurrently with depositing the magnesium-containing gallium nitride layer, forming one or more magnesium-doped regions in the gallium nitride layer by diffusing magnesium into the gallium nitride layer through the one or more portions, wherein the magnesium-containing gallium nitride layer provides a source of magnesium dopants; removing the magnesium-containing gallium nitride layer; and removing the mask. Currently amended
The method of claim 1 wherein depositing the magnesium-containing gallium nitride layer is performed in a thin film deposition chamber. Original
The method of claim 1 wherein depositing the magnesium-containing gallium nitride layer is performed at a temperature ranging from about [[900]] 1000 0 C to about 1100 0 C. Currently amended
The method of claim 1 wherein the magnesium- containing gallium nitride layer has a magnesium density ranging from about 1x 10 19 cm- 3 to about 1x10 20 cm⁻³ Original
The method of claim 1 wherein the substrate structure comprises: a buffer layer formed on a substrate; a first epitaxial gallium nitride layer formed on the buffer layer; and a second epitaxial gallium nitride layer formed on the first epitaxial gallium nitride layer; wherein the one or more magnesium-doped regions are formed in the second epitaxial gallium nitride layer. Original
The method of claim 1 wherein removing the magnesium- containing gallium nitride layer comprises removing an entirety of the magnesium-containing gallium nitride layer. New
A method of forming doped regions in gallium nitride materials, the method comprising: providing a gallium nitride substrate structure, the gallium nitride substrate structure including: a buffer layer formed on a substrate; a first epitaxial gallium nitride layer formed on the buffer layer; a second epitaxial gallium nitride layer formed on the first epitaxial gallium nitride layer; and an epitaxial aluminum gallium nitride layer formed on the second epitaxial gallium nitride layer; forming a mask on the epitaxial aluminum gallium nitride layer, the mask exposing one or more portions of a top surface of the epitaxial aluminum gallium nitride layer; depositing a magnesium-containing gallium nitride layer on the one or more portions of the top surface of the epitaxial aluminum gallium nitride layer; concurrently with depositing the magnesium-containing gallium nitride layer, forming one or more magnesium-doped regions in the epitaxial aluminum gallium nitride layer by diffusing magnesium into the epitaxial aluminum gallium nitride layer through the one or more portions, wherein the magnesium-containing gallium nitride layer provides a source of magnesium dopants; removing the magnesium-containing gallium nitride layer; and removing the mask. Original
The method of claim 13 wherein depositing the magnesium-containing gallium nitride layer is performed in a thin film deposition chamber. Original
The method of claim 13 wherein depositing the magnesium-containing gallium nitride layer is performed at a temperature ranging from about 900 0 C to about 1100 0 C. Original
The method of claim 13 wherein the magnesium- containing gallium nitride layer has a magnesium density ranging from about 1x 10 19 cm- 3 to about 1x 10 1 9 c m -3 Original
The method of claim 13 wherein the substrate comprises: a polycrystalline ceramic core; a barrier layer encapsulating the polycrystalline ceramic core; a bonding layer coupled to the barrier layer; and a substantially single crystalline layer coupled to the bonding layer. Original
The method of claim 13 wherein the second epitaxial gallium nitride layer is undoped. Original
Layer stacks claimed or described, ordered top of device to substrate.
GaN substrate structure with buffer and epitaxial layers
engineered substrate
Materials described outside the worked examples.
first epitaxial gallium nitride layer (N-type doped)
GaN
magnesium-containing gallium nitride layer
GaN:Mg
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 is a simplified schematic cross-sectional diagram illustrating a diffused region in GaN materials according to an embodiment of the present invention. As …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 900–1100 °C | — |
Temperature |
Related documents with shared materials, methods, properties, or citations.
vertical p-n diode
merged p-i-n Schottky (MPS) diode
GaN/AlGaN substrate structure for HEMT
high-electron-mobility transistor (HEMT) power device
epitaxial aluminum gallium nitride layer
AlGaN
magnesium-doped aluminum gallium nitride region
AlGaN:Mg
FIG. 2C. Such lateral extension under the mask 250 usually does not occur in an ion implantation process. Although p-type doping of an undoped region is …
FIGS. 5 A-5 C are simplified schematic cross-sectional diagrams illustrating intermediate steps in a method of forming doped regions in GaN materials by …
| — |
Thickness | ≤ 0.5 µm | — |
Thickness | ≥ 8 µm | — |
Voltage | ≥ 500 V | — |
vertical p-n diode
merged p-i-n Schottky (MPS) diode
GaN/AlGaN substrate structure for HEMT
high-electron-mobility transistor (HEMT) power device
epitaxial aluminum gallium nitride layer
AlGaN
magnesium-doped aluminum gallium nitride region
AlGaN:Mg
FIG. 2C. Such lateral extension under the mask 250 usually does not occur in an ion implantation process. Although p-type doping of an undoped region is …
FIGS. 5 A-5 C are simplified schematic cross-sectional diagrams illustrating intermediate steps in a method of forming doped regions in GaN materials by …
| — |
Thickness | ≤ 0.5 µm | — |
Thickness | ≥ 8 µm | — |
Voltage | ≥ 500 V | — |
vertical p-n diode
merged p-i-n Schottky (MPS) diode
GaN/AlGaN substrate structure for HEMT
high-electron-mobility transistor (HEMT) power device
epitaxial aluminum gallium nitride layer
AlGaN
magnesium-doped aluminum gallium nitride region
AlGaN:Mg
FIG. 2C. Such lateral extension under the mask 250 usually does not occur in an ion implantation process. Although p-type doping of an undoped region is …
FIGS. 5 A-5 C are simplified schematic cross-sectional diagrams illustrating intermediate steps in a method of forming doped regions in GaN materials by …
| — |
Thickness | ≤ 0.5 µm | — |
Thickness | ≥ 8 µm | — |
Voltage | ≥ 500 V | — |
vertical p-n diode
merged p-i-n Schottky (MPS) diode
GaN/AlGaN substrate structure for HEMT
high-electron-mobility transistor (HEMT) power device
epitaxial aluminum gallium nitride layer
AlGaN
magnesium-doped aluminum gallium nitride region
AlGaN:Mg
FIG. 2C. Such lateral extension under the mask 250 usually does not occur in an ion implantation process. Although p-type doping of an undoped region is …
FIGS. 5 A-5 C are simplified schematic cross-sectional diagrams illustrating intermediate steps in a method of forming doped regions in GaN materials by …
| — |
Thickness | ≤ 0.5 µm | — |
Thickness | ≥ 8 µm | — |
Voltage | ≥ 500 V | — |