Patent
US 10,712,302ULTRA-COMPACT, PASSIVE, VARACTOR-BASED WIRELESS SENSOR USING QUANTUM CAPACITANCE EFFECT IN GRAPHENE
Steven J. Koester
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 10,712,302Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 3(a)- 1 3(f) are conceptual diagrams that illustrate an example process flow for forming a graphene varactor having a configuration similar to that shown …
FIG. 2 is an example line diagram that illustrates a plot of theoretical quantum capacitance and oxide capacitance for three different values of effective oxide …
FIG. 3(a) illustrates an example buried charge- trapping sensor geometry, FIG 3(b) illustrates an example surface sensor design with buried gate electrode, and …
FIGS. 4(a)-4(d) are conceptual diagrams that illustrate an example technique for fo rming a multi-f i ngered graphene varactor. [0015]
FIG. 5. [0017] FI GS. 7(a) and 7(b) are exa m ple line diagra m s that illustrate, respectively, simulated capacitance and quality factor, Q, plotted versus …
FIG. 6 is a diagram of example experimental results of capacitance versus gate voltage for the example varactor shown in
FIGS. 7(a) and 7(b). The simulated parameters are listed on the right side of the figure, and represent realistic material and structural parameters. As …
FIGS. 8(a)-8(d) are line diagrams that show variation of the calculated graphene varactor capacitance tuning range (black) and Q (red) at n net = 0 (solid) and …
FIG. 9. The simulated parameters are listed on the right side of
FIG. 10(a) is a line diagram that shows the calculated maximum oscillation frequency of an example LC resonator plotted versus capacitor layout area. [0021 1
FIG. 11 (b) is an example diagram that illustrates tuning range versus values for random potential fluctuations for an example graphene varactor. [0024] FIG …
FIG. 13(b). The graphene may be formed using, for example, CVD or exfoliation. In some cases, relatively large pieces (e.g., greater than 2 0 p m by 2 0 p m) …
FIGS. 14(a)- 14(d). [0079] FIG 14(a) is a contrast-enhanced optical micrograph of an example of a large piece of exfoliated single-layer graphene. FIG 14(b) is …
FIG. 15 is a conceptual diagram that illustrates an example glucose sensor that utilizes a graphene varactor. [0032 1
FIG. 16 is a conceptual diagram that illustrates another example glucose sensor that utilizes a graphene varactor. [0033 1 FIG 17 illustrates an example …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Canceled
A sensor comprising: a graphene quantum capacitance varactor comprising: an insulator layer; a dielectric layer on the insulator layer; a graphene layer on the dielectric layer; and a molecule attached to either the graphene layer or a protective insulator on a surface of the graphene layer opposite the dielectric layer, wherein capacitance of the graphene layer changes in response to a change in carrier concentration in the graphene layer upon exposure of the molecule to a sample. Currently amended
The sensor of claim 2, wherein the molecule comprises a glucose-sensitive molecule. Previously presented
The sensor of claim 2, wherein the molecule is attached to the exposed surface of the graphene layer through pi-pi interactions. Previously presented
The sensor of claim 2, wherein the molecule attached to the exposed surface of the graphene layer comprises a pyrene group. Previously presented
The sensor of claim 2, wherein the molecule attached to the exposed surface of the graphene layer comprises a succinimidyl ester group. Previously presented
The sensor of claim 2, wherein the molecule comprises 1- pyrenebutanoic acid succinimidyl ester. Previously presented
The sensor of claim 2, wherein the molecule comprises 1,2- epoxy-3-phenoxypropane-derivated dextran. Previously presented
The sensor of claim 2, further comprising a gate electrode between the insulator layer and the dielectric layer. Previously presented
The sensor of claim 2, further comprising a readout circuit responsive to the capacitance of the graphene layer and configured to output a signal indicative of the electrical charge. Previously presented
The sensor of claim 2, further comprising a gate electrode between the insulator layer and the dielectric layer, wherein the gate electrode is a multi-finger structure comprising at least two gate electrode fingers, the sensor further comprising a readout circuit configured to output a signal indicative of a change to the capacitance of the graphene layer. Currently amended
The sensor of claim 2, wherein capacitance of the graphene layer changes in response to collection of electrons in the graphene layer upon exposure to the sample. Previously presented
Layer stacks claimed or described, ordered top of device to substrate.
graphene quantum capacitance varactor sensor
Materials described outside the worked examples.
graphene
C
insulator layer
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 is an example line diagram that illustrates a plot of theoretical quantum capacitance and oxide capacitance for three different values of effective oxide …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
equivalent oxide thickness (EOT) | — | — |
capacitance modulation ratio | — | — |
EOT values discussed in description |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,712,302Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 3(a)- 1 3(f) are conceptual diagrams that illustrate an example process flow for forming a graphene varactor having a configuration similar to that shown …
FIG. 2 is an example line diagram that illustrates a plot of theoretical quantum capacitance and oxide capacitance for three different values of effective oxide …
FIG. 3(a) illustrates an example buried charge- trapping sensor geometry, FIG 3(b) illustrates an example surface sensor design with buried gate electrode, and …
FIGS. 4(a)-4(d) are conceptual diagrams that illustrate an example technique for fo rming a multi-f i ngered graphene varactor. [0015]
FIG. 5. [0017] FI GS. 7(a) and 7(b) are exa m ple line diagra m s that illustrate, respectively, simulated capacitance and quality factor, Q, plotted versus …
FIG. 6 is a diagram of example experimental results of capacitance versus gate voltage for the example varactor shown in
FIGS. 7(a) and 7(b). The simulated parameters are listed on the right side of the figure, and represent realistic material and structural parameters. As …
FIGS. 8(a)-8(d) are line diagrams that show variation of the calculated graphene varactor capacitance tuning range (black) and Q (red) at n net = 0 (solid) and …
FIG. 9. The simulated parameters are listed on the right side of
FIG. 10(a) is a line diagram that shows the calculated maximum oscillation frequency of an example LC resonator plotted versus capacitor layout area. [0021 1
FIG. 11 (b) is an example diagram that illustrates tuning range versus values for random potential fluctuations for an example graphene varactor. [0024] FIG …
FIG. 13(b). The graphene may be formed using, for example, CVD or exfoliation. In some cases, relatively large pieces (e.g., greater than 2 0 p m by 2 0 p m) …
FIGS. 14(a)- 14(d). [0079] FIG 14(a) is a contrast-enhanced optical micrograph of an example of a large piece of exfoliated single-layer graphene. FIG 14(b) is …
FIG. 15 is a conceptual diagram that illustrates an example glucose sensor that utilizes a graphene varactor. [0032 1
FIG. 16 is a conceptual diagram that illustrates another example glucose sensor that utilizes a graphene varactor. [0033 1 FIG 17 illustrates an example …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Canceled
A sensor comprising: a graphene quantum capacitance varactor comprising: an insulator layer; a dielectric layer on the insulator layer; a graphene layer on the dielectric layer; and a molecule attached to either the graphene layer or a protective insulator on a surface of the graphene layer opposite the dielectric layer, wherein capacitance of the graphene layer changes in response to a change in carrier concentration in the graphene layer upon exposure of the molecule to a sample. Currently amended
The sensor of claim 2, wherein the molecule comprises a glucose-sensitive molecule. Previously presented
The sensor of claim 2, wherein the molecule is attached to the exposed surface of the graphene layer through pi-pi interactions. Previously presented
The sensor of claim 2, wherein the molecule attached to the exposed surface of the graphene layer comprises a pyrene group. Previously presented
The sensor of claim 2, wherein the molecule attached to the exposed surface of the graphene layer comprises a succinimidyl ester group. Previously presented
The sensor of claim 2, wherein the molecule comprises 1- pyrenebutanoic acid succinimidyl ester. Previously presented
The sensor of claim 2, wherein the molecule comprises 1,2- epoxy-3-phenoxypropane-derivated dextran. Previously presented
The sensor of claim 2, further comprising a gate electrode between the insulator layer and the dielectric layer. Previously presented
The sensor of claim 2, further comprising a readout circuit responsive to the capacitance of the graphene layer and configured to output a signal indicative of the electrical charge. Previously presented
The sensor of claim 2, further comprising a gate electrode between the insulator layer and the dielectric layer, wherein the gate electrode is a multi-finger structure comprising at least two gate electrode fingers, the sensor further comprising a readout circuit configured to output a signal indicative of a change to the capacitance of the graphene layer. Currently amended
The sensor of claim 2, wherein capacitance of the graphene layer changes in response to collection of electrons in the graphene layer upon exposure to the sample. Previously presented
Layer stacks claimed or described, ordered top of device to substrate.
graphene quantum capacitance varactor sensor
Materials described outside the worked examples.
graphene
C
insulator layer
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 is an example line diagram that illustrates a plot of theoretical quantum capacitance and oxide capacitance for three different values of effective oxide …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
equivalent oxide thickness (EOT) | — | — |
capacitance modulation ratio | — | — |
EOT values discussed in description |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,712,302Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 3(a)- 1 3(f) are conceptual diagrams that illustrate an example process flow for forming a graphene varactor having a configuration similar to that shown …
FIG. 2 is an example line diagram that illustrates a plot of theoretical quantum capacitance and oxide capacitance for three different values of effective oxide …
FIG. 3(a) illustrates an example buried charge- trapping sensor geometry, FIG 3(b) illustrates an example surface sensor design with buried gate electrode, and …
FIGS. 4(a)-4(d) are conceptual diagrams that illustrate an example technique for fo rming a multi-f i ngered graphene varactor. [0015]
FIG. 5. [0017] FI GS. 7(a) and 7(b) are exa m ple line diagra m s that illustrate, respectively, simulated capacitance and quality factor, Q, plotted versus …
FIG. 6 is a diagram of example experimental results of capacitance versus gate voltage for the example varactor shown in
FIGS. 7(a) and 7(b). The simulated parameters are listed on the right side of the figure, and represent realistic material and structural parameters. As …
FIGS. 8(a)-8(d) are line diagrams that show variation of the calculated graphene varactor capacitance tuning range (black) and Q (red) at n net = 0 (solid) and …
FIG. 9. The simulated parameters are listed on the right side of
FIG. 10(a) is a line diagram that shows the calculated maximum oscillation frequency of an example LC resonator plotted versus capacitor layout area. [0021 1
FIG. 11 (b) is an example diagram that illustrates tuning range versus values for random potential fluctuations for an example graphene varactor. [0024] FIG …
FIG. 13(b). The graphene may be formed using, for example, CVD or exfoliation. In some cases, relatively large pieces (e.g., greater than 2 0 p m by 2 0 p m) …
FIGS. 14(a)- 14(d). [0079] FIG 14(a) is a contrast-enhanced optical micrograph of an example of a large piece of exfoliated single-layer graphene. FIG 14(b) is …
FIG. 15 is a conceptual diagram that illustrates an example glucose sensor that utilizes a graphene varactor. [0032 1
FIG. 16 is a conceptual diagram that illustrates another example glucose sensor that utilizes a graphene varactor. [0033 1 FIG 17 illustrates an example …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Canceled
A sensor comprising: a graphene quantum capacitance varactor comprising: an insulator layer; a dielectric layer on the insulator layer; a graphene layer on the dielectric layer; and a molecule attached to either the graphene layer or a protective insulator on a surface of the graphene layer opposite the dielectric layer, wherein capacitance of the graphene layer changes in response to a change in carrier concentration in the graphene layer upon exposure of the molecule to a sample. Currently amended
The sensor of claim 2, wherein the molecule comprises a glucose-sensitive molecule. Previously presented
The sensor of claim 2, wherein the molecule is attached to the exposed surface of the graphene layer through pi-pi interactions. Previously presented
The sensor of claim 2, wherein the molecule attached to the exposed surface of the graphene layer comprises a pyrene group. Previously presented
The sensor of claim 2, wherein the molecule attached to the exposed surface of the graphene layer comprises a succinimidyl ester group. Previously presented
The sensor of claim 2, wherein the molecule comprises 1- pyrenebutanoic acid succinimidyl ester. Previously presented
The sensor of claim 2, wherein the molecule comprises 1,2- epoxy-3-phenoxypropane-derivated dextran. Previously presented
The sensor of claim 2, further comprising a gate electrode between the insulator layer and the dielectric layer. Previously presented
The sensor of claim 2, further comprising a readout circuit responsive to the capacitance of the graphene layer and configured to output a signal indicative of the electrical charge. Previously presented
The sensor of claim 2, further comprising a gate electrode between the insulator layer and the dielectric layer, wherein the gate electrode is a multi-finger structure comprising at least two gate electrode fingers, the sensor further comprising a readout circuit configured to output a signal indicative of a change to the capacitance of the graphene layer. Currently amended
The sensor of claim 2, wherein capacitance of the graphene layer changes in response to collection of electrons in the graphene layer upon exposure to the sample. Previously presented
Layer stacks claimed or described, ordered top of device to substrate.
graphene quantum capacitance varactor sensor
Materials described outside the worked examples.
graphene
C
insulator layer
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 is an example line diagram that illustrates a plot of theoretical quantum capacitance and oxide capacitance for three different values of effective oxide …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
equivalent oxide thickness (EOT) | — | — |
capacitance modulation ratio | — | — |
EOT values discussed in description |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,712,302Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 3(a)- 1 3(f) are conceptual diagrams that illustrate an example process flow for forming a graphene varactor having a configuration similar to that shown …
FIG. 2 is an example line diagram that illustrates a plot of theoretical quantum capacitance and oxide capacitance for three different values of effective oxide …
FIG. 3(a) illustrates an example buried charge- trapping sensor geometry, FIG 3(b) illustrates an example surface sensor design with buried gate electrode, and …
FIGS. 4(a)-4(d) are conceptual diagrams that illustrate an example technique for fo rming a multi-f i ngered graphene varactor. [0015]
FIG. 5. [0017] FI GS. 7(a) and 7(b) are exa m ple line diagra m s that illustrate, respectively, simulated capacitance and quality factor, Q, plotted versus …
FIG. 6 is a diagram of example experimental results of capacitance versus gate voltage for the example varactor shown in
FIGS. 7(a) and 7(b). The simulated parameters are listed on the right side of the figure, and represent realistic material and structural parameters. As …
FIGS. 8(a)-8(d) are line diagrams that show variation of the calculated graphene varactor capacitance tuning range (black) and Q (red) at n net = 0 (solid) and …
FIG. 9. The simulated parameters are listed on the right side of
FIG. 10(a) is a line diagram that shows the calculated maximum oscillation frequency of an example LC resonator plotted versus capacitor layout area. [0021 1
FIG. 11 (b) is an example diagram that illustrates tuning range versus values for random potential fluctuations for an example graphene varactor. [0024] FIG …
FIG. 13(b). The graphene may be formed using, for example, CVD or exfoliation. In some cases, relatively large pieces (e.g., greater than 2 0 p m by 2 0 p m) …
FIGS. 14(a)- 14(d). [0079] FIG 14(a) is a contrast-enhanced optical micrograph of an example of a large piece of exfoliated single-layer graphene. FIG 14(b) is …
FIG. 15 is a conceptual diagram that illustrates an example glucose sensor that utilizes a graphene varactor. [0032 1
FIG. 16 is a conceptual diagram that illustrates another example glucose sensor that utilizes a graphene varactor. [0033 1 FIG 17 illustrates an example …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Canceled
A sensor comprising: a graphene quantum capacitance varactor comprising: an insulator layer; a dielectric layer on the insulator layer; a graphene layer on the dielectric layer; and a molecule attached to either the graphene layer or a protective insulator on a surface of the graphene layer opposite the dielectric layer, wherein capacitance of the graphene layer changes in response to a change in carrier concentration in the graphene layer upon exposure of the molecule to a sample. Currently amended
The sensor of claim 2, wherein the molecule comprises a glucose-sensitive molecule. Previously presented
The sensor of claim 2, wherein the molecule is attached to the exposed surface of the graphene layer through pi-pi interactions. Previously presented
The sensor of claim 2, wherein the molecule attached to the exposed surface of the graphene layer comprises a pyrene group. Previously presented
The sensor of claim 2, wherein the molecule attached to the exposed surface of the graphene layer comprises a succinimidyl ester group. Previously presented
The sensor of claim 2, wherein the molecule comprises 1- pyrenebutanoic acid succinimidyl ester. Previously presented
The sensor of claim 2, wherein the molecule comprises 1,2- epoxy-3-phenoxypropane-derivated dextran. Previously presented
The sensor of claim 2, further comprising a gate electrode between the insulator layer and the dielectric layer. Previously presented
The sensor of claim 2, further comprising a readout circuit responsive to the capacitance of the graphene layer and configured to output a signal indicative of the electrical charge. Previously presented
The sensor of claim 2, further comprising a gate electrode between the insulator layer and the dielectric layer, wherein the gate electrode is a multi-finger structure comprising at least two gate electrode fingers, the sensor further comprising a readout circuit configured to output a signal indicative of a change to the capacitance of the graphene layer. Currently amended
The sensor of claim 2, wherein capacitance of the graphene layer changes in response to collection of electrons in the graphene layer upon exposure to the sample. Previously presented
Layer stacks claimed or described, ordered top of device to substrate.
graphene quantum capacitance varactor sensor
Materials described outside the worked examples.
graphene
C
insulator layer
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 is an example line diagram that illustrates a plot of theoretical quantum capacitance and oxide capacitance for three different values of effective oxide …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
equivalent oxide thickness (EOT) | — | — |
capacitance modulation ratio | — | — |
EOT values discussed in description |
Related documents with shared materials, methods, properties, or citations.
dielectric layer
glucose-sensitive molecule
pyrene group
succinimidyl ester group
enzyme
glucose oxidase
1-pyrenebutanoic acid succinimidyl ester
1,2-epoxy-3-phenoxypropane-derivated dextran
concanavalin A
FIG. 6 is a diagram of example experimental results of capacitance versus gate voltage for the example varactor shown in
FIGS. 8(a)-8(d) are line diagrams that show variation of the calculated graphene varactor capacitance tuning range (black) and Q (red) at n net = 0 (solid) and …
FIGS. 8(a)-8(d) are line diagrams that show variation of the calculated graphene varactor capacitance tuning range (black) and Q (red) at n net = 0 (solid) and …
FIGS. 14(a)- 14(d). [0079] FIG 14(a) is a contrast-enhanced optical micrograph of an example of a large piece of exfoliated single-layer graphene. FIG 14(b) is …
| — |
| — |
capacitance modulation ratios when EOT < 1 nm | — | — |
Voltage | 0.5–1 V | — |
Thickness | ≤ 5 nm | — |
Thickness | ≤ 2 nm | — |
Thickness | ≤ 5 µm | — |
dielectric layer
glucose-sensitive molecule
pyrene group
succinimidyl ester group
enzyme
glucose oxidase
1-pyrenebutanoic acid succinimidyl ester
1,2-epoxy-3-phenoxypropane-derivated dextran
concanavalin A
FIG. 6 is a diagram of example experimental results of capacitance versus gate voltage for the example varactor shown in
FIGS. 8(a)-8(d) are line diagrams that show variation of the calculated graphene varactor capacitance tuning range (black) and Q (red) at n net = 0 (solid) and …
FIGS. 8(a)-8(d) are line diagrams that show variation of the calculated graphene varactor capacitance tuning range (black) and Q (red) at n net = 0 (solid) and …
FIGS. 14(a)- 14(d). [0079] FIG 14(a) is a contrast-enhanced optical micrograph of an example of a large piece of exfoliated single-layer graphene. FIG 14(b) is …
| — |
| — |
capacitance modulation ratios when EOT < 1 nm | — | — |
Voltage | 0.5–1 V | — |
Thickness | ≤ 5 nm | — |
Thickness | ≤ 2 nm | — |
Thickness | ≤ 5 µm | — |
dielectric layer
glucose-sensitive molecule
pyrene group
succinimidyl ester group
enzyme
glucose oxidase
1-pyrenebutanoic acid succinimidyl ester
1,2-epoxy-3-phenoxypropane-derivated dextran
concanavalin A
FIG. 6 is a diagram of example experimental results of capacitance versus gate voltage for the example varactor shown in
FIGS. 8(a)-8(d) are line diagrams that show variation of the calculated graphene varactor capacitance tuning range (black) and Q (red) at n net = 0 (solid) and …
FIGS. 8(a)-8(d) are line diagrams that show variation of the calculated graphene varactor capacitance tuning range (black) and Q (red) at n net = 0 (solid) and …
FIGS. 14(a)- 14(d). [0079] FIG 14(a) is a contrast-enhanced optical micrograph of an example of a large piece of exfoliated single-layer graphene. FIG 14(b) is …
| — |
| — |
capacitance modulation ratios when EOT < 1 nm | — | — |
Voltage | 0.5–1 V | — |
Thickness | ≤ 5 nm | — |
Thickness | ≤ 2 nm | — |
Thickness | ≤ 5 µm | — |
dielectric layer
glucose-sensitive molecule
pyrene group
succinimidyl ester group
enzyme
glucose oxidase
1-pyrenebutanoic acid succinimidyl ester
1,2-epoxy-3-phenoxypropane-derivated dextran
concanavalin A
FIG. 6 is a diagram of example experimental results of capacitance versus gate voltage for the example varactor shown in
FIGS. 8(a)-8(d) are line diagrams that show variation of the calculated graphene varactor capacitance tuning range (black) and Q (red) at n net = 0 (solid) and …
FIGS. 8(a)-8(d) are line diagrams that show variation of the calculated graphene varactor capacitance tuning range (black) and Q (red) at n net = 0 (solid) and …
FIGS. 14(a)- 14(d). [0079] FIG 14(a) is a contrast-enhanced optical micrograph of an example of a large piece of exfoliated single-layer graphene. FIG 14(b) is …
| — |
| — |
capacitance modulation ratios when EOT < 1 nm | — | — |
Voltage | 0.5–1 V | — |
Thickness | ≤ 5 nm | — |
Thickness | ≤ 2 nm | — |
Thickness | ≤ 5 µm | — |