Patent
US 8,597,738FABRICATION OF SINGLE-CRYSTALLINE GRAPHENE ARRAYS
Qingkai Yu, Shin-Shem Pei
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 8,597,738Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 A shows an optical image (scale bar is 25 microns) of as-grown, 20 mostly hexagonally shaped GSC islands on the surface of one polycrystalline Cu …
FIG. 2B. With a 9 HOUS 001USO longer growth time, each graphene island in the array increases in size, as shown in
FIG. 3. Briefly, 10 (according to one embodiment) annealed Cu foils (25 microns thick) were spin-coated with PMMA film followed by electron beam lithography for …
FIG. 4D shows an enlarged image of a typical individual graphene grain. The hexagon has 11 HOUS 001USO well-defined sides, and the underlying microstructures …
FIG. 5B). Residues of the PMMA after growth can also be clearly observed, shown as light dots in the image. It is believed that the large amount of PMMA has 20 …
FIGS. 6A-6B are photographs of SEM images of graphite micropillars on HOPG; and [0019]
FIG. 7 is a photograph of a SEM image of graphene grains 15 on Cu foil grown from HOPG seeds. DETAILED DESCRIPTION [0020] Although the present disclosure is …
FIGS. 10 2A-2C are 10 microns, and scale bar in
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
The method of Claim 1, wherein said substrate comprises copper.
The method of Claim 1, wherein said lithography comprises electron-beam lithography.
The method of Claim 1, further comprising ceasing said chemical vapor deposition before said plurality of graphene islands merge together.
The method of Claim 1, further comprising allowing said chemical vapor deposition to proceed until said plurality of graphene islands merge together into a single sheet of polycrystalline graphene with grain boundaries at known locations between said predetermined locations. 6. The method of Claim 1, further comprising etching away said substrate. 2 App l e. No. 13/270,766 Amdt. Dated Reply to Office Action of 7. A method for producing an array of single-crystal graphene islands, said method comprising: providing a substrate comprising a material having a low carbon di sel-vabilit y solubility at least as low as copper; cleaning a surface of said substrate; fabricating a regular array of graphite micropillars on a highly oriented pyrolytic graphite surface; transferring a plurality of graphite seeds from said array of graphite micropillars onto said surface at predetermined locations; performing chemical vapor deposition on said substrate, said plurality of graphite seeds serving as nucleation sites; and thereby producing a plurality of graphene islands at said predetermined locations, a majority of said graphene islands comprising single-crystal graphene islands.
The method of Claim 7, wherein said substrate comprises copper.
The method of Claim 7, wherein said transferring comprises pressing said surface of said substrate against said graphite pillars.
The method of Claim 7, further comprising ceasing said chemical vapor deposition before said plurality of graphene islands merge together.
The method of Claim 7, further comprising allowing said chemical vapor deposition to proceed until said plurality of graphene islands merge together into a single sheet of polycrystalline graphene with grain boundaries at known locations between said predetermined locations. 12. The method of Claim 7, further comprising etching away said substrate. 3 App l e. No. 13/270,766 Amdt. Dated Reply to Office Action of 13. A method for producing an array of single-crystal graphene islands, said method comprising: providing a substrate comprising a material having a low carbon di sse-vabilit y solubility at least as low as copper; cleaning a surface of said substrate; printing an array of carbon-containing nanodots onto said surface, said nanodots comprising seeds for graphene growth; performing chemical vapor deposition on said substrate, said plurality of seeds serving as nucleation sites; and thereby producing a plurality of graphene islands at said predetermined locations, a majority of said graphene islands comprising single-crystal graphene islands.
The method of Claim 13, wherein said substrate comprises copper.
The method of Claim 13, further comprising ceasing said chemical vapor deposition before said plurality of graphene islands merge together.
The method of Claim 13, further comprising allowing said chemical vapor deposition to proceed until said plurality of graphene islands merge together into a single sheet of polycrystalline graphene with grain boundaries at known locations between said predetermined locations. 17. The method of Claim 13, further comprising etching away said substrate. 4
Layer stacks claimed or described, ordered top of device to substrate.
graphene single crystal island array
Materials described outside the worked examples.
copper
Cu
single-crystal graphene
C
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 A shows an optical image (scale bar is 25 microns) of as-grown, 20 mostly hexagonally shaped GSC islands on the surface of one polycrystalline Cu …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 10–20 µm | — |
Flow Rate |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,597,738Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 A shows an optical image (scale bar is 25 microns) of as-grown, 20 mostly hexagonally shaped GSC islands on the surface of one polycrystalline Cu …
FIG. 2B. With a 9 HOUS 001USO longer growth time, each graphene island in the array increases in size, as shown in
FIG. 3. Briefly, 10 (according to one embodiment) annealed Cu foils (25 microns thick) were spin-coated with PMMA film followed by electron beam lithography for …
FIG. 4D shows an enlarged image of a typical individual graphene grain. The hexagon has 11 HOUS 001USO well-defined sides, and the underlying microstructures …
FIG. 5B). Residues of the PMMA after growth can also be clearly observed, shown as light dots in the image. It is believed that the large amount of PMMA has 20 …
FIGS. 6A-6B are photographs of SEM images of graphite micropillars on HOPG; and [0019]
FIG. 7 is a photograph of a SEM image of graphene grains 15 on Cu foil grown from HOPG seeds. DETAILED DESCRIPTION [0020] Although the present disclosure is …
FIGS. 10 2A-2C are 10 microns, and scale bar in
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
The method of Claim 1, wherein said substrate comprises copper.
The method of Claim 1, wherein said lithography comprises electron-beam lithography.
The method of Claim 1, further comprising ceasing said chemical vapor deposition before said plurality of graphene islands merge together.
The method of Claim 1, further comprising allowing said chemical vapor deposition to proceed until said plurality of graphene islands merge together into a single sheet of polycrystalline graphene with grain boundaries at known locations between said predetermined locations. 6. The method of Claim 1, further comprising etching away said substrate. 2 App l e. No. 13/270,766 Amdt. Dated Reply to Office Action of 7. A method for producing an array of single-crystal graphene islands, said method comprising: providing a substrate comprising a material having a low carbon di sel-vabilit y solubility at least as low as copper; cleaning a surface of said substrate; fabricating a regular array of graphite micropillars on a highly oriented pyrolytic graphite surface; transferring a plurality of graphite seeds from said array of graphite micropillars onto said surface at predetermined locations; performing chemical vapor deposition on said substrate, said plurality of graphite seeds serving as nucleation sites; and thereby producing a plurality of graphene islands at said predetermined locations, a majority of said graphene islands comprising single-crystal graphene islands.
The method of Claim 7, wherein said substrate comprises copper.
The method of Claim 7, wherein said transferring comprises pressing said surface of said substrate against said graphite pillars.
The method of Claim 7, further comprising ceasing said chemical vapor deposition before said plurality of graphene islands merge together.
The method of Claim 7, further comprising allowing said chemical vapor deposition to proceed until said plurality of graphene islands merge together into a single sheet of polycrystalline graphene with grain boundaries at known locations between said predetermined locations. 12. The method of Claim 7, further comprising etching away said substrate. 3 App l e. No. 13/270,766 Amdt. Dated Reply to Office Action of 13. A method for producing an array of single-crystal graphene islands, said method comprising: providing a substrate comprising a material having a low carbon di sse-vabilit y solubility at least as low as copper; cleaning a surface of said substrate; printing an array of carbon-containing nanodots onto said surface, said nanodots comprising seeds for graphene growth; performing chemical vapor deposition on said substrate, said plurality of seeds serving as nucleation sites; and thereby producing a plurality of graphene islands at said predetermined locations, a majority of said graphene islands comprising single-crystal graphene islands.
The method of Claim 13, wherein said substrate comprises copper.
The method of Claim 13, further comprising ceasing said chemical vapor deposition before said plurality of graphene islands merge together.
The method of Claim 13, further comprising allowing said chemical vapor deposition to proceed until said plurality of graphene islands merge together into a single sheet of polycrystalline graphene with grain boundaries at known locations between said predetermined locations. 17. The method of Claim 13, further comprising etching away said substrate. 4
Layer stacks claimed or described, ordered top of device to substrate.
graphene single crystal island array
Materials described outside the worked examples.
copper
Cu
single-crystal graphene
C
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 A shows an optical image (scale bar is 25 microns) of as-grown, 20 mostly hexagonally shaped GSC islands on the surface of one polycrystalline Cu …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 10–20 µm | — |
Flow Rate |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,597,738Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 A shows an optical image (scale bar is 25 microns) of as-grown, 20 mostly hexagonally shaped GSC islands on the surface of one polycrystalline Cu …
FIG. 2B. With a 9 HOUS 001USO longer growth time, each graphene island in the array increases in size, as shown in
FIG. 3. Briefly, 10 (according to one embodiment) annealed Cu foils (25 microns thick) were spin-coated with PMMA film followed by electron beam lithography for …
FIG. 4D shows an enlarged image of a typical individual graphene grain. The hexagon has 11 HOUS 001USO well-defined sides, and the underlying microstructures …
FIG. 5B). Residues of the PMMA after growth can also be clearly observed, shown as light dots in the image. It is believed that the large amount of PMMA has 20 …
FIGS. 6A-6B are photographs of SEM images of graphite micropillars on HOPG; and [0019]
FIG. 7 is a photograph of a SEM image of graphene grains 15 on Cu foil grown from HOPG seeds. DETAILED DESCRIPTION [0020] Although the present disclosure is …
FIGS. 10 2A-2C are 10 microns, and scale bar in
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
The method of Claim 1, wherein said substrate comprises copper.
The method of Claim 1, wherein said lithography comprises electron-beam lithography.
The method of Claim 1, further comprising ceasing said chemical vapor deposition before said plurality of graphene islands merge together.
The method of Claim 1, further comprising allowing said chemical vapor deposition to proceed until said plurality of graphene islands merge together into a single sheet of polycrystalline graphene with grain boundaries at known locations between said predetermined locations. 6. The method of Claim 1, further comprising etching away said substrate. 2 App l e. No. 13/270,766 Amdt. Dated Reply to Office Action of 7. A method for producing an array of single-crystal graphene islands, said method comprising: providing a substrate comprising a material having a low carbon di sel-vabilit y solubility at least as low as copper; cleaning a surface of said substrate; fabricating a regular array of graphite micropillars on a highly oriented pyrolytic graphite surface; transferring a plurality of graphite seeds from said array of graphite micropillars onto said surface at predetermined locations; performing chemical vapor deposition on said substrate, said plurality of graphite seeds serving as nucleation sites; and thereby producing a plurality of graphene islands at said predetermined locations, a majority of said graphene islands comprising single-crystal graphene islands.
The method of Claim 7, wherein said substrate comprises copper.
The method of Claim 7, wherein said transferring comprises pressing said surface of said substrate against said graphite pillars.
The method of Claim 7, further comprising ceasing said chemical vapor deposition before said plurality of graphene islands merge together.
The method of Claim 7, further comprising allowing said chemical vapor deposition to proceed until said plurality of graphene islands merge together into a single sheet of polycrystalline graphene with grain boundaries at known locations between said predetermined locations. 12. The method of Claim 7, further comprising etching away said substrate. 3 App l e. No. 13/270,766 Amdt. Dated Reply to Office Action of 13. A method for producing an array of single-crystal graphene islands, said method comprising: providing a substrate comprising a material having a low carbon di sse-vabilit y solubility at least as low as copper; cleaning a surface of said substrate; printing an array of carbon-containing nanodots onto said surface, said nanodots comprising seeds for graphene growth; performing chemical vapor deposition on said substrate, said plurality of seeds serving as nucleation sites; and thereby producing a plurality of graphene islands at said predetermined locations, a majority of said graphene islands comprising single-crystal graphene islands.
The method of Claim 13, wherein said substrate comprises copper.
The method of Claim 13, further comprising ceasing said chemical vapor deposition before said plurality of graphene islands merge together.
The method of Claim 13, further comprising allowing said chemical vapor deposition to proceed until said plurality of graphene islands merge together into a single sheet of polycrystalline graphene with grain boundaries at known locations between said predetermined locations. 17. The method of Claim 13, further comprising etching away said substrate. 4
Layer stacks claimed or described, ordered top of device to substrate.
graphene single crystal island array
Materials described outside the worked examples.
copper
Cu
single-crystal graphene
C
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 A shows an optical image (scale bar is 25 microns) of as-grown, 20 mostly hexagonally shaped GSC islands on the surface of one polycrystalline Cu …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 10–20 µm | — |
Flow Rate |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,597,738Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 A shows an optical image (scale bar is 25 microns) of as-grown, 20 mostly hexagonally shaped GSC islands on the surface of one polycrystalline Cu …
FIG. 2B. With a 9 HOUS 001USO longer growth time, each graphene island in the array increases in size, as shown in
FIG. 3. Briefly, 10 (according to one embodiment) annealed Cu foils (25 microns thick) were spin-coated with PMMA film followed by electron beam lithography for …
FIG. 4D shows an enlarged image of a typical individual graphene grain. The hexagon has 11 HOUS 001USO well-defined sides, and the underlying microstructures …
FIG. 5B). Residues of the PMMA after growth can also be clearly observed, shown as light dots in the image. It is believed that the large amount of PMMA has 20 …
FIGS. 6A-6B are photographs of SEM images of graphite micropillars on HOPG; and [0019]
FIG. 7 is a photograph of a SEM image of graphene grains 15 on Cu foil grown from HOPG seeds. DETAILED DESCRIPTION [0020] Although the present disclosure is …
FIGS. 10 2A-2C are 10 microns, and scale bar in
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
The method of Claim 1, wherein said substrate comprises copper.
The method of Claim 1, wherein said lithography comprises electron-beam lithography.
The method of Claim 1, further comprising ceasing said chemical vapor deposition before said plurality of graphene islands merge together.
The method of Claim 1, further comprising allowing said chemical vapor deposition to proceed until said plurality of graphene islands merge together into a single sheet of polycrystalline graphene with grain boundaries at known locations between said predetermined locations. 6. The method of Claim 1, further comprising etching away said substrate. 2 App l e. No. 13/270,766 Amdt. Dated Reply to Office Action of 7. A method for producing an array of single-crystal graphene islands, said method comprising: providing a substrate comprising a material having a low carbon di sel-vabilit y solubility at least as low as copper; cleaning a surface of said substrate; fabricating a regular array of graphite micropillars on a highly oriented pyrolytic graphite surface; transferring a plurality of graphite seeds from said array of graphite micropillars onto said surface at predetermined locations; performing chemical vapor deposition on said substrate, said plurality of graphite seeds serving as nucleation sites; and thereby producing a plurality of graphene islands at said predetermined locations, a majority of said graphene islands comprising single-crystal graphene islands.
The method of Claim 7, wherein said substrate comprises copper.
The method of Claim 7, wherein said transferring comprises pressing said surface of said substrate against said graphite pillars.
The method of Claim 7, further comprising ceasing said chemical vapor deposition before said plurality of graphene islands merge together.
The method of Claim 7, further comprising allowing said chemical vapor deposition to proceed until said plurality of graphene islands merge together into a single sheet of polycrystalline graphene with grain boundaries at known locations between said predetermined locations. 12. The method of Claim 7, further comprising etching away said substrate. 3 App l e. No. 13/270,766 Amdt. Dated Reply to Office Action of 13. A method for producing an array of single-crystal graphene islands, said method comprising: providing a substrate comprising a material having a low carbon di sse-vabilit y solubility at least as low as copper; cleaning a surface of said substrate; printing an array of carbon-containing nanodots onto said surface, said nanodots comprising seeds for graphene growth; performing chemical vapor deposition on said substrate, said plurality of seeds serving as nucleation sites; and thereby producing a plurality of graphene islands at said predetermined locations, a majority of said graphene islands comprising single-crystal graphene islands.
The method of Claim 13, wherein said substrate comprises copper.
The method of Claim 13, further comprising ceasing said chemical vapor deposition before said plurality of graphene islands merge together.
The method of Claim 13, further comprising allowing said chemical vapor deposition to proceed until said plurality of graphene islands merge together into a single sheet of polycrystalline graphene with grain boundaries at known locations between said predetermined locations. 17. The method of Claim 13, further comprising etching away said substrate. 4
Layer stacks claimed or described, ordered top of device to substrate.
graphene single crystal island array
Materials described outside the worked examples.
copper
Cu
single-crystal graphene
C
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 A shows an optical image (scale bar is 25 microns) of as-grown, 20 mostly hexagonally shaped GSC islands on the surface of one polycrystalline Cu …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 10–20 µm | — |
Flow Rate |
Related documents with shared materials, methods, properties, or citations.
carbon-containing nanodots
poly(methyl methacrylate) (PMMA)
FIG. 2B. With a 9 HOUS 001USO longer growth time, each graphene island in the array increases in size, as shown in
FIG. 4D shows an enlarged image of a typical individual graphene grain. The hexagon has 11 HOUS 001USO well-defined sides, and the underlying microstructures …
FIG. 5B). Residues of the PMMA after growth can also be clearly observed, shown as light dots in the image. It is believed that the large amount of PMMA has 20 …
FIG. 5B). Residues of the PMMA after growth can also be clearly observed, shown as light dots in the image. It is believed that the large amount of PMMA has 20 …
FIGS. 6A-6B are photographs of SEM images of graphite micropillars on HOPG; and [0019]
FIG. 7 is a photograph of a SEM image of graphene grains 15 on Cu foil grown from HOPG seeds. DETAILED DESCRIPTION [0020] Although the present disclosure is …
FIG. 7 is a photograph of a SEM image of graphene grains 15 on Cu foil grown from HOPG seeds. DETAILED DESCRIPTION [0020] Although the present disclosure is …
| ≤ 300 sccm |
| — |
Thickness | ≤ 1 mm | — |
carbon-containing nanodots
poly(methyl methacrylate) (PMMA)
FIG. 2B. With a 9 HOUS 001USO longer growth time, each graphene island in the array increases in size, as shown in
FIG. 4D shows an enlarged image of a typical individual graphene grain. The hexagon has 11 HOUS 001USO well-defined sides, and the underlying microstructures …
FIG. 5B). Residues of the PMMA after growth can also be clearly observed, shown as light dots in the image. It is believed that the large amount of PMMA has 20 …
FIG. 5B). Residues of the PMMA after growth can also be clearly observed, shown as light dots in the image. It is believed that the large amount of PMMA has 20 …
FIGS. 6A-6B are photographs of SEM images of graphite micropillars on HOPG; and [0019]
FIG. 7 is a photograph of a SEM image of graphene grains 15 on Cu foil grown from HOPG seeds. DETAILED DESCRIPTION [0020] Although the present disclosure is …
FIG. 7 is a photograph of a SEM image of graphene grains 15 on Cu foil grown from HOPG seeds. DETAILED DESCRIPTION [0020] Although the present disclosure is …
| ≤ 300 sccm |
| — |
Thickness | ≤ 1 mm | — |
carbon-containing nanodots
poly(methyl methacrylate) (PMMA)
FIG. 2B. With a 9 HOUS 001USO longer growth time, each graphene island in the array increases in size, as shown in
FIG. 4D shows an enlarged image of a typical individual graphene grain. The hexagon has 11 HOUS 001USO well-defined sides, and the underlying microstructures …
FIG. 5B). Residues of the PMMA after growth can also be clearly observed, shown as light dots in the image. It is believed that the large amount of PMMA has 20 …
FIG. 5B). Residues of the PMMA after growth can also be clearly observed, shown as light dots in the image. It is believed that the large amount of PMMA has 20 …
FIGS. 6A-6B are photographs of SEM images of graphite micropillars on HOPG; and [0019]
FIG. 7 is a photograph of a SEM image of graphene grains 15 on Cu foil grown from HOPG seeds. DETAILED DESCRIPTION [0020] Although the present disclosure is …
FIG. 7 is a photograph of a SEM image of graphene grains 15 on Cu foil grown from HOPG seeds. DETAILED DESCRIPTION [0020] Although the present disclosure is …
| ≤ 300 sccm |
| — |
Thickness | ≤ 1 mm | — |
carbon-containing nanodots
poly(methyl methacrylate) (PMMA)
FIG. 2B. With a 9 HOUS 001USO longer growth time, each graphene island in the array increases in size, as shown in
FIG. 4D shows an enlarged image of a typical individual graphene grain. The hexagon has 11 HOUS 001USO well-defined sides, and the underlying microstructures …
FIG. 5B). Residues of the PMMA after growth can also be clearly observed, shown as light dots in the image. It is believed that the large amount of PMMA has 20 …
FIG. 5B). Residues of the PMMA after growth can also be clearly observed, shown as light dots in the image. It is believed that the large amount of PMMA has 20 …
FIGS. 6A-6B are photographs of SEM images of graphite micropillars on HOPG; and [0019]
FIG. 7 is a photograph of a SEM image of graphene grains 15 on Cu foil grown from HOPG seeds. DETAILED DESCRIPTION [0020] Although the present disclosure is …
FIG. 7 is a photograph of a SEM image of graphene grains 15 on Cu foil grown from HOPG seeds. DETAILED DESCRIPTION [0020] Although the present disclosure is …
| ≤ 300 sccm |
| — |
Thickness | ≤ 1 mm | — |