Patent
US 8,916,973SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
Eun Seon KIM
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 8,916,973Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1, the semicon duct o r device acco rdin g to th e 25 exe mplary embodiment of the inven tive c o nce pt incl udes a semico nduct o r substrate 110 in whi …
FIG. 2. The ins u lating layer 227 i s buried i n inside and o uts i de the heating pattern 225. [0044] T he phase- change m ater i al pattern 230 may be form …
FIG. 3 is a cross-sectional view illustrating a semico nduct or dev ice acc o rdi ng to an exemplary embodim ent o f the inventive co ncept; and [0018]
FIG. 4B, a fi rs t metal patter n 321 is fo rmed o n the switching device 315. The first metal pattern 321 m ay be f o rmed of a Cu material having e xcellen t …
FIG. 40, a fi rs t graphene pattern 323 m ay be forme d along a surface of the fi rst m etal pattern 321 by a C VD method. 15 The fi rs t graphen e pattern 323 is …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A semiconductor device comprising: a data storage layer formed over a semiconductor substrate in which a lower structure is fo rmed; and an electrode structure formed on at least one side of the data storage layer over the semic onductor su bstr ate, SVG 14076889.09-10-2014.HZZTUOSCPXXIFW1.CLM26968785.12.249.1471.2246.2393.svg 3.073 6.657 Chemistry Black and white
The semiconductor device of claim 1, wherein the metal pattern includes a copper (Cu) material, and the graphene pattern is f orm ed over the metal pattern of the Cu material by a che m ical vapor deposition (CVD) method. 3 SVG 14076889.09-10-2014.HZZTUOSCPXXIFW1.CLM26968786.1.1518.325.2247.429.svg 0.347 2.43 Chemistry Black and white SVG 14076889.09-10-2014.HZZTUOSCPXXIFW1.CLM26968786.4.253.898.2250.1068.svg 0.567 6.657 Chemistry Black and white 3-4. (Canceled)
The method of claim 1 0, wherein the electrode structure includes a lower electrode, and the method further comprising forming a data storage layer over the lower electrode. withdrawn
(Withdrawn) The method of claim 1 8, wherein the metal pattern includes a copper 6 SVG 14076889.09-10-2014.HZZTUOSCPXXIFW1.CLM26968789.1.1520.324.2250.427.svg 2.433 Graph Black and white (Cu) material, and vapor depositi o n (CVD) meth od. withdrawn
The method of claim 1 8, wherein the electrode below the data storage layer, and the metal pattern cylindrical shape in which a top at a side in contact wherein the electrode structure further includes a to contact with the data storage layer. 7 withdrawn 0.343 the graphene pattern is f o rmed by a chemical structure includes a lower electrode disposed and the graphene pattern are formed in a with the data storage layer is opened, and heating pattern formed in the graphene pattern
canceled
canceled
canceled
canceled
The semiconductor device of claim 8, wherein the upper electrode includes: a second metal pattern formed over the data storage layer; and a second graphene pattern formed over the second metal pattern.
10. A method of fabricating a semiconductor device, the method comp ri sing: providing a semiconductor substrate in which a lower structure is formed; and forming an electrode structure over the lower structure, wherein the for m ing an electrode structure includes: 4 SVG 14076889.09-10-2014.HZZTUOSCPXXIFW1.CLM26968787.1.1516.328.2245.432.svg 0.347 2.43 Chemistry Black and white form ing a metal pattern over the semiconductor substrate; and forming a graphene pattern o ver the metal pattern. withdrawn
(Withdrawn) The method of claim 10, wherein the metal pattern includes a c o pper (Cu) material, and the graphene pattern is formed over the metal pattern of the Cu material by a chemical vapor deposition (CVD) method. withdrawn
(Withdrawn) The method of claim 10, wherein t he electrode structure further includes an upper electrode, and the method further comprising fo rn ing a data storage layer over the semiconductor substrate before forming the upper electrode. withdrawn
18. A method of fabricating a semiconductor device, the method comprising: for ming a data storage layer over a substrate in which a lower structure is formed; and forming an electrode structure on at least one side of the data storage layer over the substrate, wherein the electrode structure includes a metal pattern and a graphene pattern formed over the metal pattern. withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
semiconductor device with graphene electrode structure
Materials described outside the worked examples.
metal pattern (copper)
Cu
graphene
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2. The ins u lating layer 227 i s buried i n inside and o uts i de the heating pattern 225. [0044] T he phase- change m ater i al pattern 230 may be form …
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,916,973Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1, the semicon duct o r device acco rdin g to th e 25 exe mplary embodiment of the inven tive c o nce pt incl udes a semico nduct o r substrate 110 in whi …
FIG. 2. The ins u lating layer 227 i s buried i n inside and o uts i de the heating pattern 225. [0044] T he phase- change m ater i al pattern 230 may be form …
FIG. 3 is a cross-sectional view illustrating a semico nduct or dev ice acc o rdi ng to an exemplary embodim ent o f the inventive co ncept; and [0018]
FIG. 4B, a fi rs t metal patter n 321 is fo rmed o n the switching device 315. The first metal pattern 321 m ay be f o rmed of a Cu material having e xcellen t …
FIG. 40, a fi rs t graphene pattern 323 m ay be forme d along a surface of the fi rst m etal pattern 321 by a C VD method. 15 The fi rs t graphen e pattern 323 is …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A semiconductor device comprising: a data storage layer formed over a semiconductor substrate in which a lower structure is fo rmed; and an electrode structure formed on at least one side of the data storage layer over the semic onductor su bstr ate, SVG 14076889.09-10-2014.HZZTUOSCPXXIFW1.CLM26968785.12.249.1471.2246.2393.svg 3.073 6.657 Chemistry Black and white
The semiconductor device of claim 1, wherein the metal pattern includes a copper (Cu) material, and the graphene pattern is f orm ed over the metal pattern of the Cu material by a che m ical vapor deposition (CVD) method. 3 SVG 14076889.09-10-2014.HZZTUOSCPXXIFW1.CLM26968786.1.1518.325.2247.429.svg 0.347 2.43 Chemistry Black and white SVG 14076889.09-10-2014.HZZTUOSCPXXIFW1.CLM26968786.4.253.898.2250.1068.svg 0.567 6.657 Chemistry Black and white 3-4. (Canceled)
The method of claim 1 0, wherein the electrode structure includes a lower electrode, and the method further comprising forming a data storage layer over the lower electrode. withdrawn
(Withdrawn) The method of claim 1 8, wherein the metal pattern includes a copper 6 SVG 14076889.09-10-2014.HZZTUOSCPXXIFW1.CLM26968789.1.1520.324.2250.427.svg 2.433 Graph Black and white (Cu) material, and vapor depositi o n (CVD) meth od. withdrawn
The method of claim 1 8, wherein the electrode below the data storage layer, and the metal pattern cylindrical shape in which a top at a side in contact wherein the electrode structure further includes a to contact with the data storage layer. 7 withdrawn 0.343 the graphene pattern is f o rmed by a chemical structure includes a lower electrode disposed and the graphene pattern are formed in a with the data storage layer is opened, and heating pattern formed in the graphene pattern
canceled
canceled
canceled
canceled
The semiconductor device of claim 8, wherein the upper electrode includes: a second metal pattern formed over the data storage layer; and a second graphene pattern formed over the second metal pattern.
10. A method of fabricating a semiconductor device, the method comp ri sing: providing a semiconductor substrate in which a lower structure is formed; and forming an electrode structure over the lower structure, wherein the for m ing an electrode structure includes: 4 SVG 14076889.09-10-2014.HZZTUOSCPXXIFW1.CLM26968787.1.1516.328.2245.432.svg 0.347 2.43 Chemistry Black and white form ing a metal pattern over the semiconductor substrate; and forming a graphene pattern o ver the metal pattern. withdrawn
(Withdrawn) The method of claim 10, wherein the metal pattern includes a c o pper (Cu) material, and the graphene pattern is formed over the metal pattern of the Cu material by a chemical vapor deposition (CVD) method. withdrawn
(Withdrawn) The method of claim 10, wherein t he electrode structure further includes an upper electrode, and the method further comprising fo rn ing a data storage layer over the semiconductor substrate before forming the upper electrode. withdrawn
18. A method of fabricating a semiconductor device, the method comprising: for ming a data storage layer over a substrate in which a lower structure is formed; and forming an electrode structure on at least one side of the data storage layer over the substrate, wherein the electrode structure includes a metal pattern and a graphene pattern formed over the metal pattern. withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
semiconductor device with graphene electrode structure
Materials described outside the worked examples.
metal pattern (copper)
Cu
graphene
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2. The ins u lating layer 227 i s buried i n inside and o uts i de the heating pattern 225. [0044] T he phase- change m ater i al pattern 230 may be form …
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,916,973Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1, the semicon duct o r device acco rdin g to th e 25 exe mplary embodiment of the inven tive c o nce pt incl udes a semico nduct o r substrate 110 in whi …
FIG. 2. The ins u lating layer 227 i s buried i n inside and o uts i de the heating pattern 225. [0044] T he phase- change m ater i al pattern 230 may be form …
FIG. 3 is a cross-sectional view illustrating a semico nduct or dev ice acc o rdi ng to an exemplary embodim ent o f the inventive co ncept; and [0018]
FIG. 4B, a fi rs t metal patter n 321 is fo rmed o n the switching device 315. The first metal pattern 321 m ay be f o rmed of a Cu material having e xcellen t …
FIG. 40, a fi rs t graphene pattern 323 m ay be forme d along a surface of the fi rst m etal pattern 321 by a C VD method. 15 The fi rs t graphen e pattern 323 is …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A semiconductor device comprising: a data storage layer formed over a semiconductor substrate in which a lower structure is fo rmed; and an electrode structure formed on at least one side of the data storage layer over the semic onductor su bstr ate, SVG 14076889.09-10-2014.HZZTUOSCPXXIFW1.CLM26968785.12.249.1471.2246.2393.svg 3.073 6.657 Chemistry Black and white
The semiconductor device of claim 1, wherein the metal pattern includes a copper (Cu) material, and the graphene pattern is f orm ed over the metal pattern of the Cu material by a che m ical vapor deposition (CVD) method. 3 SVG 14076889.09-10-2014.HZZTUOSCPXXIFW1.CLM26968786.1.1518.325.2247.429.svg 0.347 2.43 Chemistry Black and white SVG 14076889.09-10-2014.HZZTUOSCPXXIFW1.CLM26968786.4.253.898.2250.1068.svg 0.567 6.657 Chemistry Black and white 3-4. (Canceled)
The method of claim 1 0, wherein the electrode structure includes a lower electrode, and the method further comprising forming a data storage layer over the lower electrode. withdrawn
(Withdrawn) The method of claim 1 8, wherein the metal pattern includes a copper 6 SVG 14076889.09-10-2014.HZZTUOSCPXXIFW1.CLM26968789.1.1520.324.2250.427.svg 2.433 Graph Black and white (Cu) material, and vapor depositi o n (CVD) meth od. withdrawn
The method of claim 1 8, wherein the electrode below the data storage layer, and the metal pattern cylindrical shape in which a top at a side in contact wherein the electrode structure further includes a to contact with the data storage layer. 7 withdrawn 0.343 the graphene pattern is f o rmed by a chemical structure includes a lower electrode disposed and the graphene pattern are formed in a with the data storage layer is opened, and heating pattern formed in the graphene pattern
canceled
canceled
canceled
canceled
The semiconductor device of claim 8, wherein the upper electrode includes: a second metal pattern formed over the data storage layer; and a second graphene pattern formed over the second metal pattern.
10. A method of fabricating a semiconductor device, the method comp ri sing: providing a semiconductor substrate in which a lower structure is formed; and forming an electrode structure over the lower structure, wherein the for m ing an electrode structure includes: 4 SVG 14076889.09-10-2014.HZZTUOSCPXXIFW1.CLM26968787.1.1516.328.2245.432.svg 0.347 2.43 Chemistry Black and white form ing a metal pattern over the semiconductor substrate; and forming a graphene pattern o ver the metal pattern. withdrawn
(Withdrawn) The method of claim 10, wherein the metal pattern includes a c o pper (Cu) material, and the graphene pattern is formed over the metal pattern of the Cu material by a chemical vapor deposition (CVD) method. withdrawn
(Withdrawn) The method of claim 10, wherein t he electrode structure further includes an upper electrode, and the method further comprising fo rn ing a data storage layer over the semiconductor substrate before forming the upper electrode. withdrawn
18. A method of fabricating a semiconductor device, the method comprising: for ming a data storage layer over a substrate in which a lower structure is formed; and forming an electrode structure on at least one side of the data storage layer over the substrate, wherein the electrode structure includes a metal pattern and a graphene pattern formed over the metal pattern. withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
semiconductor device with graphene electrode structure
Materials described outside the worked examples.
metal pattern (copper)
Cu
graphene
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2. The ins u lating layer 227 i s buried i n inside and o uts i de the heating pattern 225. [0044] T he phase- change m ater i al pattern 230 may be form …
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,916,973Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1, the semicon duct o r device acco rdin g to th e 25 exe mplary embodiment of the inven tive c o nce pt incl udes a semico nduct o r substrate 110 in whi …
FIG. 2. The ins u lating layer 227 i s buried i n inside and o uts i de the heating pattern 225. [0044] T he phase- change m ater i al pattern 230 may be form …
FIG. 3 is a cross-sectional view illustrating a semico nduct or dev ice acc o rdi ng to an exemplary embodim ent o f the inventive co ncept; and [0018]
FIG. 4B, a fi rs t metal patter n 321 is fo rmed o n the switching device 315. The first metal pattern 321 m ay be f o rmed of a Cu material having e xcellen t …
FIG. 40, a fi rs t graphene pattern 323 m ay be forme d along a surface of the fi rst m etal pattern 321 by a C VD method. 15 The fi rs t graphen e pattern 323 is …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A semiconductor device comprising: a data storage layer formed over a semiconductor substrate in which a lower structure is fo rmed; and an electrode structure formed on at least one side of the data storage layer over the semic onductor su bstr ate, SVG 14076889.09-10-2014.HZZTUOSCPXXIFW1.CLM26968785.12.249.1471.2246.2393.svg 3.073 6.657 Chemistry Black and white
The semiconductor device of claim 1, wherein the metal pattern includes a copper (Cu) material, and the graphene pattern is f orm ed over the metal pattern of the Cu material by a che m ical vapor deposition (CVD) method. 3 SVG 14076889.09-10-2014.HZZTUOSCPXXIFW1.CLM26968786.1.1518.325.2247.429.svg 0.347 2.43 Chemistry Black and white SVG 14076889.09-10-2014.HZZTUOSCPXXIFW1.CLM26968786.4.253.898.2250.1068.svg 0.567 6.657 Chemistry Black and white 3-4. (Canceled)
The method of claim 1 0, wherein the electrode structure includes a lower electrode, and the method further comprising forming a data storage layer over the lower electrode. withdrawn
(Withdrawn) The method of claim 1 8, wherein the metal pattern includes a copper 6 SVG 14076889.09-10-2014.HZZTUOSCPXXIFW1.CLM26968789.1.1520.324.2250.427.svg 2.433 Graph Black and white (Cu) material, and vapor depositi o n (CVD) meth od. withdrawn
The method of claim 1 8, wherein the electrode below the data storage layer, and the metal pattern cylindrical shape in which a top at a side in contact wherein the electrode structure further includes a to contact with the data storage layer. 7 withdrawn 0.343 the graphene pattern is f o rmed by a chemical structure includes a lower electrode disposed and the graphene pattern are formed in a with the data storage layer is opened, and heating pattern formed in the graphene pattern
canceled
canceled
canceled
canceled
The semiconductor device of claim 8, wherein the upper electrode includes: a second metal pattern formed over the data storage layer; and a second graphene pattern formed over the second metal pattern.
10. A method of fabricating a semiconductor device, the method comp ri sing: providing a semiconductor substrate in which a lower structure is formed; and forming an electrode structure over the lower structure, wherein the for m ing an electrode structure includes: 4 SVG 14076889.09-10-2014.HZZTUOSCPXXIFW1.CLM26968787.1.1516.328.2245.432.svg 0.347 2.43 Chemistry Black and white form ing a metal pattern over the semiconductor substrate; and forming a graphene pattern o ver the metal pattern. withdrawn
(Withdrawn) The method of claim 10, wherein the metal pattern includes a c o pper (Cu) material, and the graphene pattern is formed over the metal pattern of the Cu material by a chemical vapor deposition (CVD) method. withdrawn
(Withdrawn) The method of claim 10, wherein t he electrode structure further includes an upper electrode, and the method further comprising fo rn ing a data storage layer over the semiconductor substrate before forming the upper electrode. withdrawn
18. A method of fabricating a semiconductor device, the method comprising: for ming a data storage layer over a substrate in which a lower structure is formed; and forming an electrode structure on at least one side of the data storage layer over the substrate, wherein the electrode structure includes a metal pattern and a graphene pattern formed over the metal pattern. withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
semiconductor device with graphene electrode structure
Materials described outside the worked examples.
metal pattern (copper)
Cu
graphene
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2. The ins u lating layer 227 i s buried i n inside and o uts i de the heating pattern 225. [0044] T he phase- change m ater i al pattern 230 may be form …
Related documents with shared materials, methods, properties, or citations.
data storage layer
FIG. 4B, a fi rs t metal patter n 321 is fo rmed o n the switching device 315. The first metal pattern 321 m ay be f o rmed of a Cu material having e xcellen t …
FIG. 4B, a fi rs t metal patter n 321 is fo rmed o n the switching device 315. The first metal pattern 321 m ay be f o rmed of a Cu material having e xcellen t …
data storage layer
FIG. 4B, a fi rs t metal patter n 321 is fo rmed o n the switching device 315. The first metal pattern 321 m ay be f o rmed of a Cu material having e xcellen t …
FIG. 4B, a fi rs t metal patter n 321 is fo rmed o n the switching device 315. The first metal pattern 321 m ay be f o rmed of a Cu material having e xcellen t …
data storage layer
FIG. 4B, a fi rs t metal patter n 321 is fo rmed o n the switching device 315. The first metal pattern 321 m ay be f o rmed of a Cu material having e xcellen t …
FIG. 4B, a fi rs t metal patter n 321 is fo rmed o n the switching device 315. The first metal pattern 321 m ay be f o rmed of a Cu material having e xcellen t …
data storage layer
FIG. 4B, a fi rs t metal patter n 321 is fo rmed o n the switching device 315. The first metal pattern 321 m ay be f o rmed of a Cu material having e xcellen t …
FIG. 4B, a fi rs t metal patter n 321 is fo rmed o n the switching device 315. The first metal pattern 321 m ay be f o rmed of a Cu material having e xcellen t …