Patent
US 9,287,359ORIENTED BOTTOM-UP GROWTH OF ARMCHAIR GRAPHENE NANORIBBONS ON GERMANIUM
Michael Scott Arnold
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,287,359Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a scanning electron microscopy image of an array of graphene nanoribbons on a G e (001) surface. The orientation of the long nanoribbon axis is …
FIG. 2. Table 1. Growth conditions used to grow graphene nanoribbons, including the growth temperature, (T), growth time (t), Ar flux (Ar), H 2 flux (H 2), CH₄ …
FIG. 3. Table 2. Other growth conditions that yielded graphene nanoribbons, including the growth temperature, (T), growth time (t), Ar flux (Ar), H 2 flux (H 2), …
FIG. 4 is a plot of graphene nanoribbon width vs. g rowth time with constant CH₄ mole fraction (0.0092), H 2 mole fraction (0.33), t otal pressure (760 Torr), …
FIG. 5 is a plot of graphene nanoribbon length vs. g rowth time with constant CH₄ mole fraction (0.0092), H 2 mole fraction (0.33), t otal pressure (760 Torr), …
FIG. 6. Growth rate of nanoribbon length (R 1) plotted against methane mole fraction (xCH₄). The growth temperature is 910 ° C, Ar flux is 200 s cc m, H 2 flux …
FIG. 7. Growth rate of nanoribbon length (R 1) plotted against hydrogen mole fraction (xH 2). The growth temperature is 910 ° C, CH₄ flux is 2.0 s cc m, and …
FIG. 8. Nanoribbon aspect ratio plotted against width for different xCH₄ in the range from about 0.00662 to about 0.0164. Growth conditions: H 2 mole fraction …
FIG. 9. Nanoribbon aspect ratio plotted against width for different xH 2 in the range from about 0.33 1 to about 0.215. Growth conditions: CH₄ mole fraction is …
FIG. 10. Nanoribbon length (R 1) plotted against temperature (T). The Ar flux is 200 s cc m, H 2 flux is 100 s cc m, CH₄ flux is 2.8 s cc m, and total pressure is …
FIG. 11. Scanning tunneling microscope (ST M) image of a nanoribbon having atomically smooth edge segments. The nanoribbon was grown at 910 ° C with Ar, H 2, …
FIG. 12. Schematic illustration of a graphene nanoribbon with armchair edges perfectly aligned along the Ge[11 0] direction (upper nanoribbon) and a graphene …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene nanoribbon array comprising: a germanium substrate having a (001) facet; and a plurality of graphene nanoribbons on the (001) facet of the germanium substrate; wherein the graphene nanoribbons have aspect ratios of at least 5 and the average aspect ratio of the graphene nanoribbons in the plurality of graphene nanoribbons is at least 20; and further wherein the graphene nanoribbons have the armchair crystallographic direction of graphene running all the way along their long axes axis and an armchair configuration along their edges, of the nanoribbon edges and further wherein the long axes axis of the graphene nanoribbons are is oriented along a the [110] direction[[s]] of the germanium.
The array of claim 1, wherein the plurality of graphene nanoribbons comprises graphene nanoribbons having edges with an rms roughness of 1 nm or lower over edge lengths of at least 40 nm.
The array of claim 1, wherein the plurality of graphene nanoribbons comprises graphene nanoribbons having edges with an rms roughness of 0.5 nm or lower over edge lengths of at least 40 nm.
The array of claim 1, wherein the plurality of graphene nanoribbons comprises graphene nanoribbons having edges with an rms roughness of 0 nm eo lower o ver edge lengths of at least 10 nm.
The array of claim 1, wherein the plurality of graphene nanoribbons comprises a first portion of graphene nanoribbons having their long axis oriented along a first [110] direction of the germanium and a second portion of graphene nanoribbons having their long axis oriented along a second [110] direction of the germanium.
The array of claim 1, wherein the (001) facet of the germanium comprises is miscut toward the 110 direction, such that a series of (001) faceted terraces separated by steps that are a multiple of two atomic layers in height are formed along a single [110] direction, and the graphene nanoribbons are oriented grown along the terraces with the armchair crystallographic direction of the graphene and the long nanoribbon axes axis oriented along a single [110] direction of the germanium.
The array of claim 1, wherein the plurality of graphene nanoribbons include graphene nanoribbons having widths of no greater than about 10 nm and average lengths of at least 200 nm.
canceled
A method of growing graphene nanoribbons, the method comprising growing graphene on the (001) facet of a germanium substrate via chemical vapor deposition from a mixture of methane gas and hydrogen gas, wherein the partial pressures of the methane and hydrogen are selected to result in the growth of a plurality of graphene nanoribbons having their long axis oriented along the [110] directions of the germanium substrate and having the armchair crystallographic direction of graphene running parallel to the long nanoribbon edges, wherein the graphene nanoribbons are grown with an average aspect ratio of at least 12. withdrawn
The method of claim 10, wherein the plurality of graphene nanoribbons includes graphene nanoribbons grown with widths of less than 5 nm. withdrawn
The method of claim 10, wherein the plurality of graphene nanoribbons includes graphene nanoribbons grown with widths of no greater than about 10 nm and average lengths of at least 200 nm. withdrawn
The method of claim 10, wherein the (001) facet of the germanium is miscut toward the 110 direction, such that a series of (001) faceted terraces separated by steps that are a multiple of two atomic layers in height are formed along a single [110] direction, and the graphene nanoribbons are grown along the terraces with the armchair crystallographic -3- Atty. Dkt. No.: 00300-0234 direction of graphene and the long nanoribbon axis oriented along a single [110] direction of the germanium. withdrawn
The method of claim 10, further comprising incorporating the graphene nanoribbons and the germanium substrate into an electronic or photonic device. withdrawn
The method of claim 10, further comprising releasing at least a portion of the graphene nanoribbons from the germanium substrate and transferring the released graphene nanoribbons to a second substrate. withdrawn
The method of claim 10, wherein seed particles are disposed on, or embedded in, the surface of the germanium substrate, and the seed particles catalyze the growth of, and control the location of, the graphene nanoribbons on the germanium substrate. -4- withdrawn
Embodiments described in the patent, grouped by the materials and process steps they use.
4 materials1 process step
Graphene nanoribbons are grown on the (001) facet of a germanium substrate via CVD using a mixture of methane and hydrogen gas. The partial pressures of methane and hydrogen are tuned to produce oriented armchair graphene nanoribbons with high aspect ratios along the [110] direction of germanium. Edge roughness is characterized by STM.
Layer stacks claimed or described, ordered top of device to substrate.
graphene nanoribbon array on Ge(001)
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 is a scanning electron microscopy image of an array of graphene nanoribbons on a G e (001) surface. The orientation of the long nanoribbon axis is …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
rms edge roughness ≤1 nm over ≥40 nm edge length (claim 2) | — | C |
rms edge roughness ≤0.5 nm over ≥40 nm edge length (claim 3) | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,287,359Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a scanning electron microscopy image of an array of graphene nanoribbons on a G e (001) surface. The orientation of the long nanoribbon axis is …
FIG. 2. Table 1. Growth conditions used to grow graphene nanoribbons, including the growth temperature, (T), growth time (t), Ar flux (Ar), H 2 flux (H 2), CH₄ …
FIG. 3. Table 2. Other growth conditions that yielded graphene nanoribbons, including the growth temperature, (T), growth time (t), Ar flux (Ar), H 2 flux (H 2), …
FIG. 4 is a plot of graphene nanoribbon width vs. g rowth time with constant CH₄ mole fraction (0.0092), H 2 mole fraction (0.33), t otal pressure (760 Torr), …
FIG. 5 is a plot of graphene nanoribbon length vs. g rowth time with constant CH₄ mole fraction (0.0092), H 2 mole fraction (0.33), t otal pressure (760 Torr), …
FIG. 6. Growth rate of nanoribbon length (R 1) plotted against methane mole fraction (xCH₄). The growth temperature is 910 ° C, Ar flux is 200 s cc m, H 2 flux …
FIG. 7. Growth rate of nanoribbon length (R 1) plotted against hydrogen mole fraction (xH 2). The growth temperature is 910 ° C, CH₄ flux is 2.0 s cc m, and …
FIG. 8. Nanoribbon aspect ratio plotted against width for different xCH₄ in the range from about 0.00662 to about 0.0164. Growth conditions: H 2 mole fraction …
FIG. 9. Nanoribbon aspect ratio plotted against width for different xH 2 in the range from about 0.33 1 to about 0.215. Growth conditions: CH₄ mole fraction is …
FIG. 10. Nanoribbon length (R 1) plotted against temperature (T). The Ar flux is 200 s cc m, H 2 flux is 100 s cc m, CH₄ flux is 2.8 s cc m, and total pressure is …
FIG. 11. Scanning tunneling microscope (ST M) image of a nanoribbon having atomically smooth edge segments. The nanoribbon was grown at 910 ° C with Ar, H 2, …
FIG. 12. Schematic illustration of a graphene nanoribbon with armchair edges perfectly aligned along the Ge[11 0] direction (upper nanoribbon) and a graphene …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene nanoribbon array comprising: a germanium substrate having a (001) facet; and a plurality of graphene nanoribbons on the (001) facet of the germanium substrate; wherein the graphene nanoribbons have aspect ratios of at least 5 and the average aspect ratio of the graphene nanoribbons in the plurality of graphene nanoribbons is at least 20; and further wherein the graphene nanoribbons have the armchair crystallographic direction of graphene running all the way along their long axes axis and an armchair configuration along their edges, of the nanoribbon edges and further wherein the long axes axis of the graphene nanoribbons are is oriented along a the [110] direction[[s]] of the germanium.
The array of claim 1, wherein the plurality of graphene nanoribbons comprises graphene nanoribbons having edges with an rms roughness of 1 nm or lower over edge lengths of at least 40 nm.
The array of claim 1, wherein the plurality of graphene nanoribbons comprises graphene nanoribbons having edges with an rms roughness of 0.5 nm or lower over edge lengths of at least 40 nm.
The array of claim 1, wherein the plurality of graphene nanoribbons comprises graphene nanoribbons having edges with an rms roughness of 0 nm eo lower o ver edge lengths of at least 10 nm.
The array of claim 1, wherein the plurality of graphene nanoribbons comprises a first portion of graphene nanoribbons having their long axis oriented along a first [110] direction of the germanium and a second portion of graphene nanoribbons having their long axis oriented along a second [110] direction of the germanium.
The array of claim 1, wherein the (001) facet of the germanium comprises is miscut toward the 110 direction, such that a series of (001) faceted terraces separated by steps that are a multiple of two atomic layers in height are formed along a single [110] direction, and the graphene nanoribbons are oriented grown along the terraces with the armchair crystallographic direction of the graphene and the long nanoribbon axes axis oriented along a single [110] direction of the germanium.
The array of claim 1, wherein the plurality of graphene nanoribbons include graphene nanoribbons having widths of no greater than about 10 nm and average lengths of at least 200 nm.
canceled
A method of growing graphene nanoribbons, the method comprising growing graphene on the (001) facet of a germanium substrate via chemical vapor deposition from a mixture of methane gas and hydrogen gas, wherein the partial pressures of the methane and hydrogen are selected to result in the growth of a plurality of graphene nanoribbons having their long axis oriented along the [110] directions of the germanium substrate and having the armchair crystallographic direction of graphene running parallel to the long nanoribbon edges, wherein the graphene nanoribbons are grown with an average aspect ratio of at least 12. withdrawn
The method of claim 10, wherein the plurality of graphene nanoribbons includes graphene nanoribbons grown with widths of less than 5 nm. withdrawn
The method of claim 10, wherein the plurality of graphene nanoribbons includes graphene nanoribbons grown with widths of no greater than about 10 nm and average lengths of at least 200 nm. withdrawn
The method of claim 10, wherein the (001) facet of the germanium is miscut toward the 110 direction, such that a series of (001) faceted terraces separated by steps that are a multiple of two atomic layers in height are formed along a single [110] direction, and the graphene nanoribbons are grown along the terraces with the armchair crystallographic -3- Atty. Dkt. No.: 00300-0234 direction of graphene and the long nanoribbon axis oriented along a single [110] direction of the germanium. withdrawn
The method of claim 10, further comprising incorporating the graphene nanoribbons and the germanium substrate into an electronic or photonic device. withdrawn
The method of claim 10, further comprising releasing at least a portion of the graphene nanoribbons from the germanium substrate and transferring the released graphene nanoribbons to a second substrate. withdrawn
The method of claim 10, wherein seed particles are disposed on, or embedded in, the surface of the germanium substrate, and the seed particles catalyze the growth of, and control the location of, the graphene nanoribbons on the germanium substrate. -4- withdrawn
Embodiments described in the patent, grouped by the materials and process steps they use.
4 materials1 process step
Graphene nanoribbons are grown on the (001) facet of a germanium substrate via CVD using a mixture of methane and hydrogen gas. The partial pressures of methane and hydrogen are tuned to produce oriented armchair graphene nanoribbons with high aspect ratios along the [110] direction of germanium. Edge roughness is characterized by STM.
Layer stacks claimed or described, ordered top of device to substrate.
graphene nanoribbon array on Ge(001)
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 is a scanning electron microscopy image of an array of graphene nanoribbons on a G e (001) surface. The orientation of the long nanoribbon axis is …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
rms edge roughness ≤1 nm over ≥40 nm edge length (claim 2) | — | C |
rms edge roughness ≤0.5 nm over ≥40 nm edge length (claim 3) | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,287,359Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a scanning electron microscopy image of an array of graphene nanoribbons on a G e (001) surface. The orientation of the long nanoribbon axis is …
FIG. 2. Table 1. Growth conditions used to grow graphene nanoribbons, including the growth temperature, (T), growth time (t), Ar flux (Ar), H 2 flux (H 2), CH₄ …
FIG. 3. Table 2. Other growth conditions that yielded graphene nanoribbons, including the growth temperature, (T), growth time (t), Ar flux (Ar), H 2 flux (H 2), …
FIG. 4 is a plot of graphene nanoribbon width vs. g rowth time with constant CH₄ mole fraction (0.0092), H 2 mole fraction (0.33), t otal pressure (760 Torr), …
FIG. 5 is a plot of graphene nanoribbon length vs. g rowth time with constant CH₄ mole fraction (0.0092), H 2 mole fraction (0.33), t otal pressure (760 Torr), …
FIG. 6. Growth rate of nanoribbon length (R 1) plotted against methane mole fraction (xCH₄). The growth temperature is 910 ° C, Ar flux is 200 s cc m, H 2 flux …
FIG. 7. Growth rate of nanoribbon length (R 1) plotted against hydrogen mole fraction (xH 2). The growth temperature is 910 ° C, CH₄ flux is 2.0 s cc m, and …
FIG. 8. Nanoribbon aspect ratio plotted against width for different xCH₄ in the range from about 0.00662 to about 0.0164. Growth conditions: H 2 mole fraction …
FIG. 9. Nanoribbon aspect ratio plotted against width for different xH 2 in the range from about 0.33 1 to about 0.215. Growth conditions: CH₄ mole fraction is …
FIG. 10. Nanoribbon length (R 1) plotted against temperature (T). The Ar flux is 200 s cc m, H 2 flux is 100 s cc m, CH₄ flux is 2.8 s cc m, and total pressure is …
FIG. 11. Scanning tunneling microscope (ST M) image of a nanoribbon having atomically smooth edge segments. The nanoribbon was grown at 910 ° C with Ar, H 2, …
FIG. 12. Schematic illustration of a graphene nanoribbon with armchair edges perfectly aligned along the Ge[11 0] direction (upper nanoribbon) and a graphene …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene nanoribbon array comprising: a germanium substrate having a (001) facet; and a plurality of graphene nanoribbons on the (001) facet of the germanium substrate; wherein the graphene nanoribbons have aspect ratios of at least 5 and the average aspect ratio of the graphene nanoribbons in the plurality of graphene nanoribbons is at least 20; and further wherein the graphene nanoribbons have the armchair crystallographic direction of graphene running all the way along their long axes axis and an armchair configuration along their edges, of the nanoribbon edges and further wherein the long axes axis of the graphene nanoribbons are is oriented along a the [110] direction[[s]] of the germanium.
The array of claim 1, wherein the plurality of graphene nanoribbons comprises graphene nanoribbons having edges with an rms roughness of 1 nm or lower over edge lengths of at least 40 nm.
The array of claim 1, wherein the plurality of graphene nanoribbons comprises graphene nanoribbons having edges with an rms roughness of 0.5 nm or lower over edge lengths of at least 40 nm.
The array of claim 1, wherein the plurality of graphene nanoribbons comprises graphene nanoribbons having edges with an rms roughness of 0 nm eo lower o ver edge lengths of at least 10 nm.
The array of claim 1, wherein the plurality of graphene nanoribbons comprises a first portion of graphene nanoribbons having their long axis oriented along a first [110] direction of the germanium and a second portion of graphene nanoribbons having their long axis oriented along a second [110] direction of the germanium.
The array of claim 1, wherein the (001) facet of the germanium comprises is miscut toward the 110 direction, such that a series of (001) faceted terraces separated by steps that are a multiple of two atomic layers in height are formed along a single [110] direction, and the graphene nanoribbons are oriented grown along the terraces with the armchair crystallographic direction of the graphene and the long nanoribbon axes axis oriented along a single [110] direction of the germanium.
The array of claim 1, wherein the plurality of graphene nanoribbons include graphene nanoribbons having widths of no greater than about 10 nm and average lengths of at least 200 nm.
canceled
A method of growing graphene nanoribbons, the method comprising growing graphene on the (001) facet of a germanium substrate via chemical vapor deposition from a mixture of methane gas and hydrogen gas, wherein the partial pressures of the methane and hydrogen are selected to result in the growth of a plurality of graphene nanoribbons having their long axis oriented along the [110] directions of the germanium substrate and having the armchair crystallographic direction of graphene running parallel to the long nanoribbon edges, wherein the graphene nanoribbons are grown with an average aspect ratio of at least 12. withdrawn
The method of claim 10, wherein the plurality of graphene nanoribbons includes graphene nanoribbons grown with widths of less than 5 nm. withdrawn
The method of claim 10, wherein the plurality of graphene nanoribbons includes graphene nanoribbons grown with widths of no greater than about 10 nm and average lengths of at least 200 nm. withdrawn
The method of claim 10, wherein the (001) facet of the germanium is miscut toward the 110 direction, such that a series of (001) faceted terraces separated by steps that are a multiple of two atomic layers in height are formed along a single [110] direction, and the graphene nanoribbons are grown along the terraces with the armchair crystallographic -3- Atty. Dkt. No.: 00300-0234 direction of graphene and the long nanoribbon axis oriented along a single [110] direction of the germanium. withdrawn
The method of claim 10, further comprising incorporating the graphene nanoribbons and the germanium substrate into an electronic or photonic device. withdrawn
The method of claim 10, further comprising releasing at least a portion of the graphene nanoribbons from the germanium substrate and transferring the released graphene nanoribbons to a second substrate. withdrawn
The method of claim 10, wherein seed particles are disposed on, or embedded in, the surface of the germanium substrate, and the seed particles catalyze the growth of, and control the location of, the graphene nanoribbons on the germanium substrate. -4- withdrawn
Embodiments described in the patent, grouped by the materials and process steps they use.
4 materials1 process step
Graphene nanoribbons are grown on the (001) facet of a germanium substrate via CVD using a mixture of methane and hydrogen gas. The partial pressures of methane and hydrogen are tuned to produce oriented armchair graphene nanoribbons with high aspect ratios along the [110] direction of germanium. Edge roughness is characterized by STM.
Layer stacks claimed or described, ordered top of device to substrate.
graphene nanoribbon array on Ge(001)
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 is a scanning electron microscopy image of an array of graphene nanoribbons on a G e (001) surface. The orientation of the long nanoribbon axis is …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
rms edge roughness ≤1 nm over ≥40 nm edge length (claim 2) | — | C |
rms edge roughness ≤0.5 nm over ≥40 nm edge length (claim 3) | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,287,359Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a scanning electron microscopy image of an array of graphene nanoribbons on a G e (001) surface. The orientation of the long nanoribbon axis is …
FIG. 2. Table 1. Growth conditions used to grow graphene nanoribbons, including the growth temperature, (T), growth time (t), Ar flux (Ar), H 2 flux (H 2), CH₄ …
FIG. 3. Table 2. Other growth conditions that yielded graphene nanoribbons, including the growth temperature, (T), growth time (t), Ar flux (Ar), H 2 flux (H 2), …
FIG. 4 is a plot of graphene nanoribbon width vs. g rowth time with constant CH₄ mole fraction (0.0092), H 2 mole fraction (0.33), t otal pressure (760 Torr), …
FIG. 5 is a plot of graphene nanoribbon length vs. g rowth time with constant CH₄ mole fraction (0.0092), H 2 mole fraction (0.33), t otal pressure (760 Torr), …
FIG. 6. Growth rate of nanoribbon length (R 1) plotted against methane mole fraction (xCH₄). The growth temperature is 910 ° C, Ar flux is 200 s cc m, H 2 flux …
FIG. 7. Growth rate of nanoribbon length (R 1) plotted against hydrogen mole fraction (xH 2). The growth temperature is 910 ° C, CH₄ flux is 2.0 s cc m, and …
FIG. 8. Nanoribbon aspect ratio plotted against width for different xCH₄ in the range from about 0.00662 to about 0.0164. Growth conditions: H 2 mole fraction …
FIG. 9. Nanoribbon aspect ratio plotted against width for different xH 2 in the range from about 0.33 1 to about 0.215. Growth conditions: CH₄ mole fraction is …
FIG. 10. Nanoribbon length (R 1) plotted against temperature (T). The Ar flux is 200 s cc m, H 2 flux is 100 s cc m, CH₄ flux is 2.8 s cc m, and total pressure is …
FIG. 11. Scanning tunneling microscope (ST M) image of a nanoribbon having atomically smooth edge segments. The nanoribbon was grown at 910 ° C with Ar, H 2, …
FIG. 12. Schematic illustration of a graphene nanoribbon with armchair edges perfectly aligned along the Ge[11 0] direction (upper nanoribbon) and a graphene …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene nanoribbon array comprising: a germanium substrate having a (001) facet; and a plurality of graphene nanoribbons on the (001) facet of the germanium substrate; wherein the graphene nanoribbons have aspect ratios of at least 5 and the average aspect ratio of the graphene nanoribbons in the plurality of graphene nanoribbons is at least 20; and further wherein the graphene nanoribbons have the armchair crystallographic direction of graphene running all the way along their long axes axis and an armchair configuration along their edges, of the nanoribbon edges and further wherein the long axes axis of the graphene nanoribbons are is oriented along a the [110] direction[[s]] of the germanium.
The array of claim 1, wherein the plurality of graphene nanoribbons comprises graphene nanoribbons having edges with an rms roughness of 1 nm or lower over edge lengths of at least 40 nm.
The array of claim 1, wherein the plurality of graphene nanoribbons comprises graphene nanoribbons having edges with an rms roughness of 0.5 nm or lower over edge lengths of at least 40 nm.
The array of claim 1, wherein the plurality of graphene nanoribbons comprises graphene nanoribbons having edges with an rms roughness of 0 nm eo lower o ver edge lengths of at least 10 nm.
The array of claim 1, wherein the plurality of graphene nanoribbons comprises a first portion of graphene nanoribbons having their long axis oriented along a first [110] direction of the germanium and a second portion of graphene nanoribbons having their long axis oriented along a second [110] direction of the germanium.
The array of claim 1, wherein the (001) facet of the germanium comprises is miscut toward the 110 direction, such that a series of (001) faceted terraces separated by steps that are a multiple of two atomic layers in height are formed along a single [110] direction, and the graphene nanoribbons are oriented grown along the terraces with the armchair crystallographic direction of the graphene and the long nanoribbon axes axis oriented along a single [110] direction of the germanium.
The array of claim 1, wherein the plurality of graphene nanoribbons include graphene nanoribbons having widths of no greater than about 10 nm and average lengths of at least 200 nm.
canceled
A method of growing graphene nanoribbons, the method comprising growing graphene on the (001) facet of a germanium substrate via chemical vapor deposition from a mixture of methane gas and hydrogen gas, wherein the partial pressures of the methane and hydrogen are selected to result in the growth of a plurality of graphene nanoribbons having their long axis oriented along the [110] directions of the germanium substrate and having the armchair crystallographic direction of graphene running parallel to the long nanoribbon edges, wherein the graphene nanoribbons are grown with an average aspect ratio of at least 12. withdrawn
The method of claim 10, wherein the plurality of graphene nanoribbons includes graphene nanoribbons grown with widths of less than 5 nm. withdrawn
The method of claim 10, wherein the plurality of graphene nanoribbons includes graphene nanoribbons grown with widths of no greater than about 10 nm and average lengths of at least 200 nm. withdrawn
The method of claim 10, wherein the (001) facet of the germanium is miscut toward the 110 direction, such that a series of (001) faceted terraces separated by steps that are a multiple of two atomic layers in height are formed along a single [110] direction, and the graphene nanoribbons are grown along the terraces with the armchair crystallographic -3- Atty. Dkt. No.: 00300-0234 direction of graphene and the long nanoribbon axis oriented along a single [110] direction of the germanium. withdrawn
The method of claim 10, further comprising incorporating the graphene nanoribbons and the germanium substrate into an electronic or photonic device. withdrawn
The method of claim 10, further comprising releasing at least a portion of the graphene nanoribbons from the germanium substrate and transferring the released graphene nanoribbons to a second substrate. withdrawn
The method of claim 10, wherein seed particles are disposed on, or embedded in, the surface of the germanium substrate, and the seed particles catalyze the growth of, and control the location of, the graphene nanoribbons on the germanium substrate. -4- withdrawn
Embodiments described in the patent, grouped by the materials and process steps they use.
4 materials1 process step
Graphene nanoribbons are grown on the (001) facet of a germanium substrate via CVD using a mixture of methane and hydrogen gas. The partial pressures of methane and hydrogen are tuned to produce oriented armchair graphene nanoribbons with high aspect ratios along the [110] direction of germanium. Edge roughness is characterized by STM.
Layer stacks claimed or described, ordered top of device to substrate.
graphene nanoribbon array on Ge(001)
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 is a scanning electron microscopy image of an array of graphene nanoribbons on a G e (001) surface. The orientation of the long nanoribbon axis is …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
rms edge roughness ≤1 nm over ≥40 nm edge length (claim 2) | — | C |
rms edge roughness ≤0.5 nm over ≥40 nm edge length (claim 3) | — |
Related documents with shared materials, methods, properties, or citations.
rms edge roughness = 0 nm (atomically smooth) over ≥10 nm edge length (claim 4) | 0 nm | C |
average aspect ratio ≥20 (claim 1) | — | C |
width ≤5 nm (claim 8/11) | — | C |
width ≤~10 nm, average length ≥200 nm (claim 9/12) | — | C |
Duration | 1–13.75 hours | — |
Temperature | 895–930 °C | — |
Temperature | 860–930 °C | — |
Pressure | 0.000001 Torr | — |
Temperature | 860–935 °C | — |
Thickness | ≤ 1 nm | — |
Thickness | ≤ 0.5 nm | — |
Thickness | ≤ 10 nm | — |
Thickness | ≥ 40 nm | — |
Thickness | ≥ 10 nm | — |
Thickness | ≥ 200 nm | — |
Thickness | ≥ 500 nm | — |
Thickness | ≥ 300 nm | — |
Thickness | ≥ 1 nm | — |
Thickness | ≥ 35 nm | — |
Thickness | ≥ 60 nm | — |
Thickness | ≥ 20 nm | — |
Thickness | ≥ 5 nm | — |
Thickness | ≥ 1 mm | — |
Thickness | ≥ 10 mm | — |
Thickness | ≤ 5 nm | — |
rms edge roughness = 0 nm (atomically smooth) over ≥10 nm edge length (claim 4) | 0 nm | C |
average aspect ratio ≥20 (claim 1) | — | C |
width ≤5 nm (claim 8/11) | — | C |
width ≤~10 nm, average length ≥200 nm (claim 9/12) | — | C |
Duration | 1–13.75 hours | — |
Temperature | 895–930 °C | — |
Temperature | 860–930 °C | — |
Pressure | 0.000001 Torr | — |
Temperature | 860–935 °C | — |
Thickness | ≤ 1 nm | — |
Thickness | ≤ 0.5 nm | — |
Thickness | ≤ 10 nm | — |
Thickness | ≥ 40 nm | — |
Thickness | ≥ 10 nm | — |
Thickness | ≥ 200 nm | — |
Thickness | ≥ 500 nm | — |
Thickness | ≥ 300 nm | — |
Thickness | ≥ 1 nm | — |
Thickness | ≥ 35 nm | — |
Thickness | ≥ 60 nm | — |
Thickness | ≥ 20 nm | — |
Thickness | ≥ 5 nm | — |
Thickness | ≥ 1 mm | — |
Thickness | ≥ 10 mm | — |
Thickness | ≤ 5 nm | — |
rms edge roughness = 0 nm (atomically smooth) over ≥10 nm edge length (claim 4) | 0 nm | C |
average aspect ratio ≥20 (claim 1) | — | C |
width ≤5 nm (claim 8/11) | — | C |
width ≤~10 nm, average length ≥200 nm (claim 9/12) | — | C |
Duration | 1–13.75 hours | — |
Temperature | 895–930 °C | — |
Temperature | 860–930 °C | — |
Pressure | 0.000001 Torr | — |
Temperature | 860–935 °C | — |
Thickness | ≤ 1 nm | — |
Thickness | ≤ 0.5 nm | — |
Thickness | ≤ 10 nm | — |
Thickness | ≥ 40 nm | — |
Thickness | ≥ 10 nm | — |
Thickness | ≥ 200 nm | — |
Thickness | ≥ 500 nm | — |
Thickness | ≥ 300 nm | — |
Thickness | ≥ 1 nm | — |
Thickness | ≥ 35 nm | — |
Thickness | ≥ 60 nm | — |
Thickness | ≥ 20 nm | — |
Thickness | ≥ 5 nm | — |
Thickness | ≥ 1 mm | — |
Thickness | ≥ 10 mm | — |
Thickness | ≤ 5 nm | — |
rms edge roughness = 0 nm (atomically smooth) over ≥10 nm edge length (claim 4) | 0 nm | C |
average aspect ratio ≥20 (claim 1) | — | C |
width ≤5 nm (claim 8/11) | — | C |
width ≤~10 nm, average length ≥200 nm (claim 9/12) | — | C |
Duration | 1–13.75 hours | — |
Temperature | 895–930 °C | — |
Temperature | 860–930 °C | — |
Pressure | 0.000001 Torr | — |
Temperature | 860–935 °C | — |
Thickness | ≤ 1 nm | — |
Thickness | ≤ 0.5 nm | — |
Thickness | ≤ 10 nm | — |
Thickness | ≥ 40 nm | — |
Thickness | ≥ 10 nm | — |
Thickness | ≥ 200 nm | — |
Thickness | ≥ 500 nm | — |
Thickness | ≥ 300 nm | — |
Thickness | ≥ 1 nm | — |
Thickness | ≥ 35 nm | — |
Thickness | ≥ 60 nm | — |
Thickness | ≥ 20 nm | — |
Thickness | ≥ 5 nm | — |
Thickness | ≥ 1 mm | — |
Thickness | ≥ 10 mm | — |
Thickness | ≤ 5 nm | — |