Patent
LIGHT EMITTING DIODE
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a flowchart of one embodiment of a method for manufacturing a LED. [0009]
FIG. 2 is a schematic view of one embodiment of a graphene layer having a plurality of hole shaped apertures. [0010]
FIG. 3 is a schematic view of one embodiment of a graphene layer having a plurality of rectangular shaped apertures. [0011]
FIG. 4 is a schematic view of one embodiment of a graphene layer having apertures in different shapes. [0012]
FIG. 5 is a schematic view of one embodiment of a plurality of sub graphene layers spaced from each other. [0013]
FIG. 6 is a Scanning Electron Microscope (SEM) image of a drawn carbon nanotube film. [0014]
FIG. 7 is a schematic structural view of a carbon nanotube segment of the drawn carbon nanotube film of
FIG. 8 is an SEM image of cross-stacked drawn carbon nanotube films. [0016]
FIG. 9 is an SEM image of an untwisted carbon nanotube wire. [0017]
FIG. 10 is an SEM image of a twisted carbon nanotube wire. [0018]
FIG. 11 A is a schematic view of a LED fabricated according to the method of Page 3 of 43
FIG. 12 is a flowchart of another embodiment a method for manufacturing a LED. [0021]
FIG. 13 is a three-dimensional view of a LED fabricated according to the method of FIG 12. [0022]
FIG. 14 is a schematic, cross-sectional view, along a line XIV- XIV of
FIG. 15 is a flowchart of yet another embodiment of a method for manufacturing a LED. [0024]
FIG. 16 is a schematic view of a LED fabricated according to the method of
FIG. 17 is a flowchart of yet another embodiment of a method for manufacturing a LED. [0026]
FIG. 18 is a schematic view of a LED fabricated according to the method of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
: A light emitting diode, comprising: a substrate comprising an epitaxial growth surface; a semiconductor epitaxial layer on the epitaxial growth surface, wherein the semiconductor epitaxial layer comprises a first semiconductor laye r, an active layer, and a second semiconductor layer stacked on the substrate, the active layer is between the first semiconductor layer and the second semiconductor layer, [[and]] the first semiconductor layer comprises a first surface in direct contact with is on the epitaxial growth surface of the substrate and a second surface opposite to the first surface, the second semiconductor layer comprises a third surface and a fourth surface opposite to the third surface, and the active layer is located between the second surface and the third surface; a first electrode electrically connected with the second semiconductor layer; a second electrode in direct and electrical contact with the first semiconductor layer; a reflection layer covering the fourth surface of the second semiconductor layer so that when photons are produced in the active layer the photons are reflected by the reflection layer and light of the light emitting diode is emitted from the side of the substrate; and a first graphene layer located between the active layer and the first semiconductor layer, wherein the first graphene layer comprises a plurality of first apertures and is spaced from the second electrode, wherein the first semiconductor layer is in direct contact with the active layer by extending the first semiconductor layer through the plurality of first apertures.
: The light emitting diode of claim 1, wherein the first graphene layer is a structure consisting of graphene.
: The light emitting diode of claim 1, wherein a thickness of the first graphene layer is 2 App l. No. 14/316,745 Reply to Advisory Action of: Attorney Docket No.: in a range from about 1 nanometer to about 100 micrometers.
: The light emitting diode of claim 1, wherein the first graphene layer comprises a graphene film consisting of a single layer of continuous carbon atoms.
: The light emitting diode of claim 1, wherein the first graphene layer is a coating comprising graphene powders.
: The light emitting diode of claim 1, wherein sizes of the plurality of first apertures are in a range from about 10 nanometers to about 500 micrometers.
: The light emitting diode of claim 1, wherein a dutyfactor of the first graphene layer is in a range from about 1:100 to about 100:1, wherein the dutyfactor is an area ratio between a covered area to an exposed area of the epitaxial growth surface.
: The light emitting diode of claim 1, wherein the first semiconductor layer defines a plurality of grooves facing the active layer, and the first graphene layer is embedded in the plurality of grooves.
: The light emitting diode of claim 1, wherein the first electrode and the second electrode are all electrodes of the light emitting diode.
: The light emitting diode of claim 1, wherein the active layer is a photon excitation layer configured to provide photons. 3
. canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
light emitting diode
Materials described outside the worked examples.
graphene layer (film)
C
semiconductor epitaxial layer
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 6 is a Scanning Electron Microscope (SEM) image of a drawn carbon nanotube film. [0014]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
visible light absorption of single-layer graphene | 2.3 % | C |
single-layer graphene thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a flowchart of one embodiment of a method for manufacturing a LED. [0009]
FIG. 2 is a schematic view of one embodiment of a graphene layer having a plurality of hole shaped apertures. [0010]
FIG. 3 is a schematic view of one embodiment of a graphene layer having a plurality of rectangular shaped apertures. [0011]
FIG. 4 is a schematic view of one embodiment of a graphene layer having apertures in different shapes. [0012]
FIG. 5 is a schematic view of one embodiment of a plurality of sub graphene layers spaced from each other. [0013]
FIG. 6 is a Scanning Electron Microscope (SEM) image of a drawn carbon nanotube film. [0014]
FIG. 7 is a schematic structural view of a carbon nanotube segment of the drawn carbon nanotube film of
FIG. 8 is an SEM image of cross-stacked drawn carbon nanotube films. [0016]
FIG. 9 is an SEM image of an untwisted carbon nanotube wire. [0017]
FIG. 10 is an SEM image of a twisted carbon nanotube wire. [0018]
FIG. 11 A is a schematic view of a LED fabricated according to the method of Page 3 of 43
FIG. 12 is a flowchart of another embodiment a method for manufacturing a LED. [0021]
FIG. 13 is a three-dimensional view of a LED fabricated according to the method of FIG 12. [0022]
FIG. 14 is a schematic, cross-sectional view, along a line XIV- XIV of
FIG. 15 is a flowchart of yet another embodiment of a method for manufacturing a LED. [0024]
FIG. 16 is a schematic view of a LED fabricated according to the method of
FIG. 17 is a flowchart of yet another embodiment of a method for manufacturing a LED. [0026]
FIG. 18 is a schematic view of a LED fabricated according to the method of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
: A light emitting diode, comprising: a substrate comprising an epitaxial growth surface; a semiconductor epitaxial layer on the epitaxial growth surface, wherein the semiconductor epitaxial layer comprises a first semiconductor laye r, an active layer, and a second semiconductor layer stacked on the substrate, the active layer is between the first semiconductor layer and the second semiconductor layer, [[and]] the first semiconductor layer comprises a first surface in direct contact with is on the epitaxial growth surface of the substrate and a second surface opposite to the first surface, the second semiconductor layer comprises a third surface and a fourth surface opposite to the third surface, and the active layer is located between the second surface and the third surface; a first electrode electrically connected with the second semiconductor layer; a second electrode in direct and electrical contact with the first semiconductor layer; a reflection layer covering the fourth surface of the second semiconductor layer so that when photons are produced in the active layer the photons are reflected by the reflection layer and light of the light emitting diode is emitted from the side of the substrate; and a first graphene layer located between the active layer and the first semiconductor layer, wherein the first graphene layer comprises a plurality of first apertures and is spaced from the second electrode, wherein the first semiconductor layer is in direct contact with the active layer by extending the first semiconductor layer through the plurality of first apertures.
: The light emitting diode of claim 1, wherein the first graphene layer is a structure consisting of graphene.
: The light emitting diode of claim 1, wherein a thickness of the first graphene layer is 2 App l. No. 14/316,745 Reply to Advisory Action of: Attorney Docket No.: in a range from about 1 nanometer to about 100 micrometers.
: The light emitting diode of claim 1, wherein the first graphene layer comprises a graphene film consisting of a single layer of continuous carbon atoms.
: The light emitting diode of claim 1, wherein the first graphene layer is a coating comprising graphene powders.
: The light emitting diode of claim 1, wherein sizes of the plurality of first apertures are in a range from about 10 nanometers to about 500 micrometers.
: The light emitting diode of claim 1, wherein a dutyfactor of the first graphene layer is in a range from about 1:100 to about 100:1, wherein the dutyfactor is an area ratio between a covered area to an exposed area of the epitaxial growth surface.
: The light emitting diode of claim 1, wherein the first semiconductor layer defines a plurality of grooves facing the active layer, and the first graphene layer is embedded in the plurality of grooves.
: The light emitting diode of claim 1, wherein the first electrode and the second electrode are all electrodes of the light emitting diode.
: The light emitting diode of claim 1, wherein the active layer is a photon excitation layer configured to provide photons. 3
. canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
light emitting diode
Materials described outside the worked examples.
graphene layer (film)
C
semiconductor epitaxial layer
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 6 is a Scanning Electron Microscope (SEM) image of a drawn carbon nanotube film. [0014]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
visible light absorption of single-layer graphene | 2.3 % | C |
single-layer graphene thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a flowchart of one embodiment of a method for manufacturing a LED. [0009]
FIG. 2 is a schematic view of one embodiment of a graphene layer having a plurality of hole shaped apertures. [0010]
FIG. 3 is a schematic view of one embodiment of a graphene layer having a plurality of rectangular shaped apertures. [0011]
FIG. 4 is a schematic view of one embodiment of a graphene layer having apertures in different shapes. [0012]
FIG. 5 is a schematic view of one embodiment of a plurality of sub graphene layers spaced from each other. [0013]
FIG. 6 is a Scanning Electron Microscope (SEM) image of a drawn carbon nanotube film. [0014]
FIG. 7 is a schematic structural view of a carbon nanotube segment of the drawn carbon nanotube film of
FIG. 8 is an SEM image of cross-stacked drawn carbon nanotube films. [0016]
FIG. 9 is an SEM image of an untwisted carbon nanotube wire. [0017]
FIG. 10 is an SEM image of a twisted carbon nanotube wire. [0018]
FIG. 11 A is a schematic view of a LED fabricated according to the method of Page 3 of 43
FIG. 12 is a flowchart of another embodiment a method for manufacturing a LED. [0021]
FIG. 13 is a three-dimensional view of a LED fabricated according to the method of FIG 12. [0022]
FIG. 14 is a schematic, cross-sectional view, along a line XIV- XIV of
FIG. 15 is a flowchart of yet another embodiment of a method for manufacturing a LED. [0024]
FIG. 16 is a schematic view of a LED fabricated according to the method of
FIG. 17 is a flowchart of yet another embodiment of a method for manufacturing a LED. [0026]
FIG. 18 is a schematic view of a LED fabricated according to the method of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
: A light emitting diode, comprising: a substrate comprising an epitaxial growth surface; a semiconductor epitaxial layer on the epitaxial growth surface, wherein the semiconductor epitaxial layer comprises a first semiconductor laye r, an active layer, and a second semiconductor layer stacked on the substrate, the active layer is between the first semiconductor layer and the second semiconductor layer, [[and]] the first semiconductor layer comprises a first surface in direct contact with is on the epitaxial growth surface of the substrate and a second surface opposite to the first surface, the second semiconductor layer comprises a third surface and a fourth surface opposite to the third surface, and the active layer is located between the second surface and the third surface; a first electrode electrically connected with the second semiconductor layer; a second electrode in direct and electrical contact with the first semiconductor layer; a reflection layer covering the fourth surface of the second semiconductor layer so that when photons are produced in the active layer the photons are reflected by the reflection layer and light of the light emitting diode is emitted from the side of the substrate; and a first graphene layer located between the active layer and the first semiconductor layer, wherein the first graphene layer comprises a plurality of first apertures and is spaced from the second electrode, wherein the first semiconductor layer is in direct contact with the active layer by extending the first semiconductor layer through the plurality of first apertures.
: The light emitting diode of claim 1, wherein the first graphene layer is a structure consisting of graphene.
: The light emitting diode of claim 1, wherein a thickness of the first graphene layer is 2 App l. No. 14/316,745 Reply to Advisory Action of: Attorney Docket No.: in a range from about 1 nanometer to about 100 micrometers.
: The light emitting diode of claim 1, wherein the first graphene layer comprises a graphene film consisting of a single layer of continuous carbon atoms.
: The light emitting diode of claim 1, wherein the first graphene layer is a coating comprising graphene powders.
: The light emitting diode of claim 1, wherein sizes of the plurality of first apertures are in a range from about 10 nanometers to about 500 micrometers.
: The light emitting diode of claim 1, wherein a dutyfactor of the first graphene layer is in a range from about 1:100 to about 100:1, wherein the dutyfactor is an area ratio between a covered area to an exposed area of the epitaxial growth surface.
: The light emitting diode of claim 1, wherein the first semiconductor layer defines a plurality of grooves facing the active layer, and the first graphene layer is embedded in the plurality of grooves.
: The light emitting diode of claim 1, wherein the first electrode and the second electrode are all electrodes of the light emitting diode.
: The light emitting diode of claim 1, wherein the active layer is a photon excitation layer configured to provide photons. 3
. canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
light emitting diode
Materials described outside the worked examples.
graphene layer (film)
C
semiconductor epitaxial layer
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 6 is a Scanning Electron Microscope (SEM) image of a drawn carbon nanotube film. [0014]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
visible light absorption of single-layer graphene | 2.3 % | C |
single-layer graphene thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a flowchart of one embodiment of a method for manufacturing a LED. [0009]
FIG. 2 is a schematic view of one embodiment of a graphene layer having a plurality of hole shaped apertures. [0010]
FIG. 3 is a schematic view of one embodiment of a graphene layer having a plurality of rectangular shaped apertures. [0011]
FIG. 4 is a schematic view of one embodiment of a graphene layer having apertures in different shapes. [0012]
FIG. 5 is a schematic view of one embodiment of a plurality of sub graphene layers spaced from each other. [0013]
FIG. 6 is a Scanning Electron Microscope (SEM) image of a drawn carbon nanotube film. [0014]
FIG. 7 is a schematic structural view of a carbon nanotube segment of the drawn carbon nanotube film of
FIG. 8 is an SEM image of cross-stacked drawn carbon nanotube films. [0016]
FIG. 9 is an SEM image of an untwisted carbon nanotube wire. [0017]
FIG. 10 is an SEM image of a twisted carbon nanotube wire. [0018]
FIG. 11 A is a schematic view of a LED fabricated according to the method of Page 3 of 43
FIG. 12 is a flowchart of another embodiment a method for manufacturing a LED. [0021]
FIG. 13 is a three-dimensional view of a LED fabricated according to the method of FIG 12. [0022]
FIG. 14 is a schematic, cross-sectional view, along a line XIV- XIV of
FIG. 15 is a flowchart of yet another embodiment of a method for manufacturing a LED. [0024]
FIG. 16 is a schematic view of a LED fabricated according to the method of
FIG. 17 is a flowchart of yet another embodiment of a method for manufacturing a LED. [0026]
FIG. 18 is a schematic view of a LED fabricated according to the method of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
: A light emitting diode, comprising: a substrate comprising an epitaxial growth surface; a semiconductor epitaxial layer on the epitaxial growth surface, wherein the semiconductor epitaxial layer comprises a first semiconductor laye r, an active layer, and a second semiconductor layer stacked on the substrate, the active layer is between the first semiconductor layer and the second semiconductor layer, [[and]] the first semiconductor layer comprises a first surface in direct contact with is on the epitaxial growth surface of the substrate and a second surface opposite to the first surface, the second semiconductor layer comprises a third surface and a fourth surface opposite to the third surface, and the active layer is located between the second surface and the third surface; a first electrode electrically connected with the second semiconductor layer; a second electrode in direct and electrical contact with the first semiconductor layer; a reflection layer covering the fourth surface of the second semiconductor layer so that when photons are produced in the active layer the photons are reflected by the reflection layer and light of the light emitting diode is emitted from the side of the substrate; and a first graphene layer located between the active layer and the first semiconductor layer, wherein the first graphene layer comprises a plurality of first apertures and is spaced from the second electrode, wherein the first semiconductor layer is in direct contact with the active layer by extending the first semiconductor layer through the plurality of first apertures.
: The light emitting diode of claim 1, wherein the first graphene layer is a structure consisting of graphene.
: The light emitting diode of claim 1, wherein a thickness of the first graphene layer is 2 App l. No. 14/316,745 Reply to Advisory Action of: Attorney Docket No.: in a range from about 1 nanometer to about 100 micrometers.
: The light emitting diode of claim 1, wherein the first graphene layer comprises a graphene film consisting of a single layer of continuous carbon atoms.
: The light emitting diode of claim 1, wherein the first graphene layer is a coating comprising graphene powders.
: The light emitting diode of claim 1, wherein sizes of the plurality of first apertures are in a range from about 10 nanometers to about 500 micrometers.
: The light emitting diode of claim 1, wherein a dutyfactor of the first graphene layer is in a range from about 1:100 to about 100:1, wherein the dutyfactor is an area ratio between a covered area to an exposed area of the epitaxial growth surface.
: The light emitting diode of claim 1, wherein the first semiconductor layer defines a plurality of grooves facing the active layer, and the first graphene layer is embedded in the plurality of grooves.
: The light emitting diode of claim 1, wherein the first electrode and the second electrode are all electrodes of the light emitting diode.
: The light emitting diode of claim 1, wherein the active layer is a photon excitation layer configured to provide photons. 3
. canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
light emitting diode
Materials described outside the worked examples.
graphene layer (film)
C
semiconductor epitaxial layer
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 6 is a Scanning Electron Microscope (SEM) image of a drawn carbon nanotube film. [0014]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
visible light absorption of single-layer graphene | 2.3 % | C |
single-layer graphene thickness |
Related documents with shared materials, methods, properties, or citations.
substrate
sapphire
Al₂O₃
reflection layer
FIG. 8 is an SEM image of cross-stacked drawn carbon nanotube films. [0016]
FIG. 9 is an SEM image of an untwisted carbon nanotube wire. [0017]
FIG. 10 is an SEM image of a twisted carbon nanotube wire. [0018]
| 0.34 nm |
C |
tensile strength of single-layer graphene | 125 GPa | C |
Young's modulus of single-layer graphene | 1 TPa | C |
resistivity of single-layer graphene | — | C |
Thickness | 1–100000 nm | — |
Thickness | 10–500000 nm | — |
Thickness | 10–10000 nm | — |
Thickness | 300–1000 µm | — |
Thickness | 100–500 nm | — |
Thickness | 100–800 nm | — |
Duration | 10–20 minutes | — |
Duration | 5–10 minutes | — |
Duration | 1–2 minutes | — |
Thickness | 3–10 nm | — |
Thickness | 200–500 nm | — |
Duration | 30–90 minutes | — |
Thickness | 0.5–50 nm | — |
Thickness | 0.5–100000 nm | — |
Thickness | 1000–5000000 nm | — |
Thickness | 0.5–5000 nm | — |
Thickness | 0.1–3 µm | — |
Thickness | 0.1–0.5 µm | — |
Duration | 200–1000 seconds | — |
Thickness | 10–50 nm | — |
Duration | 30–300 seconds | — |
Pressure | 50–500 Torr | — |
Pressure | 76–200 Torr | — |
Duration | 20–30 minutes | — |
Thickness | 0.01–2 µm | — |
Thickness | 50–250 nm | — |
Thickness | 30–150 nm | — |
Thickness | ≤ 10 mm | — |
METHOD FOR MANUFACTURING GALLIUM NITRIDE SUBSTRATE USING CORE-SHELL NANOPARTICLE
substrate
sapphire
Al₂O₃
reflection layer
FIG. 8 is an SEM image of cross-stacked drawn carbon nanotube films. [0016]
FIG. 9 is an SEM image of an untwisted carbon nanotube wire. [0017]
FIG. 10 is an SEM image of a twisted carbon nanotube wire. [0018]
| 0.34 nm |
C |
tensile strength of single-layer graphene | 125 GPa | C |
Young's modulus of single-layer graphene | 1 TPa | C |
resistivity of single-layer graphene | — | C |
Thickness | 1–100000 nm | — |
Thickness | 10–500000 nm | — |
Thickness | 10–10000 nm | — |
Thickness | 300–1000 µm | — |
Thickness | 100–500 nm | — |
Thickness | 100–800 nm | — |
Duration | 10–20 minutes | — |
Duration | 5–10 minutes | — |
Duration | 1–2 minutes | — |
Thickness | 3–10 nm | — |
Thickness | 200–500 nm | — |
Duration | 30–90 minutes | — |
Thickness | 0.5–50 nm | — |
Thickness | 0.5–100000 nm | — |
Thickness | 1000–5000000 nm | — |
Thickness | 0.5–5000 nm | — |
Thickness | 0.1–3 µm | — |
Thickness | 0.1–0.5 µm | — |
Duration | 200–1000 seconds | — |
Thickness | 10–50 nm | — |
Duration | 30–300 seconds | — |
Pressure | 50–500 Torr | — |
Pressure | 76–200 Torr | — |
Duration | 20–30 minutes | — |
Thickness | 0.01–2 µm | — |
Thickness | 50–250 nm | — |
Thickness | 30–150 nm | — |
Thickness | ≤ 10 mm | — |
METHOD FOR MANUFACTURING GALLIUM NITRIDE SUBSTRATE USING CORE-SHELL NANOPARTICLE
substrate
sapphire
Al₂O₃
reflection layer
FIG. 8 is an SEM image of cross-stacked drawn carbon nanotube films. [0016]
FIG. 9 is an SEM image of an untwisted carbon nanotube wire. [0017]
FIG. 10 is an SEM image of a twisted carbon nanotube wire. [0018]
| 0.34 nm |
C |
tensile strength of single-layer graphene | 125 GPa | C |
Young's modulus of single-layer graphene | 1 TPa | C |
resistivity of single-layer graphene | — | C |
Thickness | 1–100000 nm | — |
Thickness | 10–500000 nm | — |
Thickness | 10–10000 nm | — |
Thickness | 300–1000 µm | — |
Thickness | 100–500 nm | — |
Thickness | 100–800 nm | — |
Duration | 10–20 minutes | — |
Duration | 5–10 minutes | — |
Duration | 1–2 minutes | — |
Thickness | 3–10 nm | — |
Thickness | 200–500 nm | — |
Duration | 30–90 minutes | — |
Thickness | 0.5–50 nm | — |
Thickness | 0.5–100000 nm | — |
Thickness | 1000–5000000 nm | — |
Thickness | 0.5–5000 nm | — |
Thickness | 0.1–3 µm | — |
Thickness | 0.1–0.5 µm | — |
Duration | 200–1000 seconds | — |
Thickness | 10–50 nm | — |
Duration | 30–300 seconds | — |
Pressure | 50–500 Torr | — |
Pressure | 76–200 Torr | — |
Duration | 20–30 minutes | — |
Thickness | 0.01–2 µm | — |
Thickness | 50–250 nm | — |
Thickness | 30–150 nm | — |
Thickness | ≤ 10 mm | — |
METHOD FOR MANUFACTURING GALLIUM NITRIDE SUBSTRATE USING CORE-SHELL NANOPARTICLE
substrate
sapphire
Al₂O₃
reflection layer
FIG. 8 is an SEM image of cross-stacked drawn carbon nanotube films. [0016]
FIG. 9 is an SEM image of an untwisted carbon nanotube wire. [0017]
FIG. 10 is an SEM image of a twisted carbon nanotube wire. [0018]
| 0.34 nm |
C |
tensile strength of single-layer graphene | 125 GPa | C |
Young's modulus of single-layer graphene | 1 TPa | C |
resistivity of single-layer graphene | — | C |
Thickness | 1–100000 nm | — |
Thickness | 10–500000 nm | — |
Thickness | 10–10000 nm | — |
Thickness | 300–1000 µm | — |
Thickness | 100–500 nm | — |
Thickness | 100–800 nm | — |
Duration | 10–20 minutes | — |
Duration | 5–10 minutes | — |
Duration | 1–2 minutes | — |
Thickness | 3–10 nm | — |
Thickness | 200–500 nm | — |
Duration | 30–90 minutes | — |
Thickness | 0.5–50 nm | — |
Thickness | 0.5–100000 nm | — |
Thickness | 1000–5000000 nm | — |
Thickness | 0.5–5000 nm | — |
Thickness | 0.1–3 µm | — |
Thickness | 0.1–0.5 µm | — |
Duration | 200–1000 seconds | — |
Thickness | 10–50 nm | — |
Duration | 30–300 seconds | — |
Pressure | 50–500 Torr | — |
Pressure | 76–200 Torr | — |
Duration | 20–30 minutes | — |
Thickness | 0.01–2 µm | — |
Thickness | 50–250 nm | — |
Thickness | 30–150 nm | — |
Thickness | ≤ 10 mm | — |
METHOD FOR MANUFACTURING GALLIUM NITRIDE SUBSTRATE USING CORE-SHELL NANOPARTICLE