Patent
US 9,868,640GRAPHENE BALL STRUCTURE AND METHOD OF MANUFACTURING THE SAME
Eun-kyung LEE
US
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Patent
Atlas literature
Patent
US 9,868,640Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a perspective view illustrating a graphene dot structure according to an exemplary embodiment of the present invention; [0017]
FIG. 2 is a cross-sectional view of the exemplary graphene dot structure illustrated in FIG. [0018]
FIG. 3 is a cross-sectional view of a graphene dot structure according to an exemplary embodiment of the present invention; [0019]
FIG. 4 is a diagram illustrating a graphene dot network according to an exemplary embodiment of the present invention; and [0020]
FIGS. 5 and 6 are diagrams for explaining a method of manufacturing a graphene dot structure, according to an exemplary embodiment of the present invention.
FIG. 6, a graphene dot structure 300, which includes a core 310 formed of the semiconductor material and a graphene shell 320 on the surface of the core 310 …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(Cu rr ently Amended) A method of manufacturing a graphene structure, the method comprising: providing a gas including a semiconductor material and a gas including carbon into a reaction chamber; and performing chemical vapor deposition to form a core of the semiconductor material and a shell of graphene on the surface of the core, wherein the gas including the semiconductor material comprises GeH 4 gas. Currently amended
The method of claim 1, wherein the core is formed to have a diameter in the range of about 1 nm to about 10m. Original
The method of claim 1, wherein the graphene shell is formed to have one or more layers. Original
The method of claim 1, wherein the reaction chamber comprises a non-conductive material or a metal, and the semiconductor material is deposited onto the non- conductive material or the metal. Original
The method of claim 1, further comprising removing the core from the structure of the semiconductor core and the graphene shell. Original
The method of claim 1, wherein 4 the gas amended
The method of claim 1, wherein the temperature range of about 200 ° C to about 900 °C. Original
The method of claim 1, wherein the pressure range of about 0.1 To rr to about 300 Torr. Original
The method of claim 1, further comprises structures of the semiconductor core and the comprises vaporizing the semiconductor core at of the semiconductor core. Original including the carbon comprises CH 4 gas. Currently of the reaction chamber is maintained in the of the reaction chamber is maintained in the forming a network of a plurality of the formed graphene shell. Original
. Canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene dot structure (core-shell)
graphene cage (hollow graphene shell after core removal)
graphene dot network
Materials described outside the worked examples.
semiconductor core
graphene shell
C
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 1–10000 nm | — |
Temperature | 600–1000 °C |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,868,640Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a perspective view illustrating a graphene dot structure according to an exemplary embodiment of the present invention; [0017]
FIG. 2 is a cross-sectional view of the exemplary graphene dot structure illustrated in FIG. [0018]
FIG. 3 is a cross-sectional view of a graphene dot structure according to an exemplary embodiment of the present invention; [0019]
FIG. 4 is a diagram illustrating a graphene dot network according to an exemplary embodiment of the present invention; and [0020]
FIGS. 5 and 6 are diagrams for explaining a method of manufacturing a graphene dot structure, according to an exemplary embodiment of the present invention.
FIG. 6, a graphene dot structure 300, which includes a core 310 formed of the semiconductor material and a graphene shell 320 on the surface of the core 310 …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(Cu rr ently Amended) A method of manufacturing a graphene structure, the method comprising: providing a gas including a semiconductor material and a gas including carbon into a reaction chamber; and performing chemical vapor deposition to form a core of the semiconductor material and a shell of graphene on the surface of the core, wherein the gas including the semiconductor material comprises GeH 4 gas. Currently amended
The method of claim 1, wherein the core is formed to have a diameter in the range of about 1 nm to about 10m. Original
The method of claim 1, wherein the graphene shell is formed to have one or more layers. Original
The method of claim 1, wherein the reaction chamber comprises a non-conductive material or a metal, and the semiconductor material is deposited onto the non- conductive material or the metal. Original
The method of claim 1, further comprising removing the core from the structure of the semiconductor core and the graphene shell. Original
The method of claim 1, wherein 4 the gas amended
The method of claim 1, wherein the temperature range of about 200 ° C to about 900 °C. Original
The method of claim 1, wherein the pressure range of about 0.1 To rr to about 300 Torr. Original
The method of claim 1, further comprises structures of the semiconductor core and the comprises vaporizing the semiconductor core at of the semiconductor core. Original including the carbon comprises CH 4 gas. Currently of the reaction chamber is maintained in the of the reaction chamber is maintained in the forming a network of a plurality of the formed graphene shell. Original
. Canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene dot structure (core-shell)
graphene cage (hollow graphene shell after core removal)
graphene dot network
Materials described outside the worked examples.
semiconductor core
graphene shell
C
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 1–10000 nm | — |
Temperature | 600–1000 °C |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,868,640Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a perspective view illustrating a graphene dot structure according to an exemplary embodiment of the present invention; [0017]
FIG. 2 is a cross-sectional view of the exemplary graphene dot structure illustrated in FIG. [0018]
FIG. 3 is a cross-sectional view of a graphene dot structure according to an exemplary embodiment of the present invention; [0019]
FIG. 4 is a diagram illustrating a graphene dot network according to an exemplary embodiment of the present invention; and [0020]
FIGS. 5 and 6 are diagrams for explaining a method of manufacturing a graphene dot structure, according to an exemplary embodiment of the present invention.
FIG. 6, a graphene dot structure 300, which includes a core 310 formed of the semiconductor material and a graphene shell 320 on the surface of the core 310 …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(Cu rr ently Amended) A method of manufacturing a graphene structure, the method comprising: providing a gas including a semiconductor material and a gas including carbon into a reaction chamber; and performing chemical vapor deposition to form a core of the semiconductor material and a shell of graphene on the surface of the core, wherein the gas including the semiconductor material comprises GeH 4 gas. Currently amended
The method of claim 1, wherein the core is formed to have a diameter in the range of about 1 nm to about 10m. Original
The method of claim 1, wherein the graphene shell is formed to have one or more layers. Original
The method of claim 1, wherein the reaction chamber comprises a non-conductive material or a metal, and the semiconductor material is deposited onto the non- conductive material or the metal. Original
The method of claim 1, further comprising removing the core from the structure of the semiconductor core and the graphene shell. Original
The method of claim 1, wherein 4 the gas amended
The method of claim 1, wherein the temperature range of about 200 ° C to about 900 °C. Original
The method of claim 1, wherein the pressure range of about 0.1 To rr to about 300 Torr. Original
The method of claim 1, further comprises structures of the semiconductor core and the comprises vaporizing the semiconductor core at of the semiconductor core. Original including the carbon comprises CH 4 gas. Currently of the reaction chamber is maintained in the of the reaction chamber is maintained in the forming a network of a plurality of the formed graphene shell. Original
. Canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene dot structure (core-shell)
graphene cage (hollow graphene shell after core removal)
graphene dot network
Materials described outside the worked examples.
semiconductor core
graphene shell
C
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 1–10000 nm | — |
Temperature | 600–1000 °C |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,868,640Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a perspective view illustrating a graphene dot structure according to an exemplary embodiment of the present invention; [0017]
FIG. 2 is a cross-sectional view of the exemplary graphene dot structure illustrated in FIG. [0018]
FIG. 3 is a cross-sectional view of a graphene dot structure according to an exemplary embodiment of the present invention; [0019]
FIG. 4 is a diagram illustrating a graphene dot network according to an exemplary embodiment of the present invention; and [0020]
FIGS. 5 and 6 are diagrams for explaining a method of manufacturing a graphene dot structure, according to an exemplary embodiment of the present invention.
FIG. 6, a graphene dot structure 300, which includes a core 310 formed of the semiconductor material and a graphene shell 320 on the surface of the core 310 …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(Cu rr ently Amended) A method of manufacturing a graphene structure, the method comprising: providing a gas including a semiconductor material and a gas including carbon into a reaction chamber; and performing chemical vapor deposition to form a core of the semiconductor material and a shell of graphene on the surface of the core, wherein the gas including the semiconductor material comprises GeH 4 gas. Currently amended
The method of claim 1, wherein the core is formed to have a diameter in the range of about 1 nm to about 10m. Original
The method of claim 1, wherein the graphene shell is formed to have one or more layers. Original
The method of claim 1, wherein the reaction chamber comprises a non-conductive material or a metal, and the semiconductor material is deposited onto the non- conductive material or the metal. Original
The method of claim 1, further comprising removing the core from the structure of the semiconductor core and the graphene shell. Original
The method of claim 1, wherein 4 the gas amended
The method of claim 1, wherein the temperature range of about 200 ° C to about 900 °C. Original
The method of claim 1, wherein the pressure range of about 0.1 To rr to about 300 Torr. Original
The method of claim 1, further comprises structures of the semiconductor core and the comprises vaporizing the semiconductor core at of the semiconductor core. Original including the carbon comprises CH 4 gas. Currently of the reaction chamber is maintained in the of the reaction chamber is maintained in the forming a network of a plurality of the formed graphene shell. Original
. Canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene dot structure (core-shell)
graphene cage (hollow graphene shell after core removal)
graphene dot network
Materials described outside the worked examples.
semiconductor core
graphene shell
C
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 1–10000 nm | — |
Temperature | 600–1000 °C |
Related documents with shared materials, methods, properties, or citations.
germane
GeH₄
methane
CH₄
germanium
Ge
| — |
Pressure | 0.1–200 Torr | — |
Pressure | 10–30 Torr | — |
Temperature | 200–900 °C | — |
Generalized Phase Diagrams for Graphene CVD growth on Copper
germane
GeH₄
methane
CH₄
germanium
Ge
| — |
Pressure | 0.1–200 Torr | — |
Pressure | 10–30 Torr | — |
Temperature | 200–900 °C | — |
Generalized Phase Diagrams for Graphene CVD growth on Copper
germane
GeH₄
methane
CH₄
germanium
Ge
| — |
Pressure | 0.1–200 Torr | — |
Pressure | 10–30 Torr | — |
Temperature | 200–900 °C | — |
Generalized Phase Diagrams for Graphene CVD growth on Copper
germane
GeH₄
methane
CH₄
germanium
Ge
| — |
Pressure | 0.1–200 Torr | — |
Pressure | 10–30 Torr | — |
Temperature | 200–900 °C | — |
Generalized Phase Diagrams for Graphene CVD growth on Copper