Patent
US 9,287,116METHOD OF FORMING MULTILAYER GRAPHENE STRUCTURE
Hwansoo SUH
US
Copyright © 2026 Matter42. All rights reserved.
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Atlas literature
Patent
US 9,287,116Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 to 6 illustrate a method of forming a multilayer graphene structure according to example embodiments; [0030]
FIG. 2, a sacrificial layer 120 is formed on the growth substrate 110. The sacrificial layer 120 may be formed directly on the growth substrate 110. The …
FIG. 3, a first graphene 131' is grown on the sacrificial layer 120 and a second graphene 132' is epitaxially grown on a lower surface of the first graphene 131'. …
FIG. 4, the first and second graphenes 131' and 132' continues growing and a third graphene 133' epitaxially grows on a lower surface of the second graphene …
FIG. 5, the first, second, and third graphenes 131', 132', and 133' continues growing and a fourth graphene 134' epitaxially grows on a lower surface of the …
FIG. 6, when the growth of the first, second, third, and fourth graphenes 131', 132', 133', 134' is completed, first, second, third, and fourth graphene layers …
FIGS. 7A to 7B illustrate a method of forming a plurality of multilayer graphene structures on a substrate according to example embodiments; and [0031]
FIGS. 8A to 8H illustrate a method of forming a plurality of multilayer graphene structures according to example embodiments.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of forming a multilayer graphene structure, the method comprising: forming a sacrificial layer including a plurality of hexagonal boron nitride (h-BN) films on a growth substrate; growing a first epitaxial graphene layer on the sacrificial layer using a chemical vapor deposition (CVD) method, the growing the first epitaxial graphene layer including removing an uppermost part of the h-BN films to leave remaining h-BN films; forming a second epitaxial graphene layer on an upper surface of the remaining h-BN films using the CVD method, and removing an uppermost part of the remaining h-BN films under the first graphene layer during the forming the second graphene layer using the CVD method; and forming a third epitaxial graphene layer by epitaxially growing the third epitaxial graphene layer on the remaining h-BN films, wherein a lower surface of the second epitaxial graphene layer is on the third epitaxial graphene layer.
The method of claim 1, wherein the growth substrate includes at least one of Cu, Ni, Pt, Rh, Ir, and A g.
The method of claim 1, wherein the forming the sacrificial layer includes growing the h-BN films using a CVD process.
The method of claim 1, wherein the CVD method includes one of a low pressure chemical vapor deposition (LPCVD) method, an atmosphere pressure chemical vapor deposition (APCVD) method, and a plasma enhanced pressure chemical vapor deposition (PECVD) method.
1 1. The method of claim 1, wherein growth temperatures during the forming the first and second epitaxial graphene layers are about 900 * C to about 1050 *C.
The method of claim 1, wherein the CVD method includes C H 4 as a process gas.
The method of claim 1, wherein the CVD method used for forming the second expitaxial graphene layer includes: generating hydrogen atoms by decomposing the CH 4, and removing the uppermost part of the h-BN films from under the first epitaxial graphene layer using the hydrogen atoms generated as the CH 4 is decomposed.
The method of claim 1, further comprising: removing an uppermost part of the remaining h-BN films during the forming the third epitaxial graphene layer; and forming a fourth epitaxial graphene layer by epitaxially growing the fourth epitaxial graphene layer on the remaining h-BN films, wherein a lower surface of the third epitaxial graphene layer is on the fourth epitaxial graphene layer.
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1 7. A method of forming a multilayer graphene structure, the method comprising: forming N sacrificial films on a growth substrate, the N sacrificial films stacked on each other, Application No.: 14/309,128 Attorney Docket No.: 2557S I -002163-US Page 5 of 6 N being an integer greater than 1; forming M graphene layers on the growth substrate using a chemical vapor deposition (CVD) method, M being an integer greater than I and less than or equal to N, the M graphene layers including a (M- l)th graphene layer, the forming M graphene layers including removing at least an uppermost part of the N sacrificial films under the (M-1)th graphene layer while forming the Mth graphene layer during the CVD method and a number of the graphene layers formed during the forming M graphene layers is controlled based on a quantity of the sacrificial films formed during the forming N sacrificial films.
The method of claim 17, wherein the growth substrate includes a catalyst for forming the M graphene layers using the CVD method, and the N sacrificial films are hexagonal boron nitride (h-BN) films.
The method of claim 17, wherein the forming N sacrificial films includes forming N sacrificial films directly on the growth substrate.
Layer stacks claimed or described, ordered top of device to substrate.
multilayer graphene structure
Materials described outside the worked examples.
graphene
hexagonal boron nitride
h-BN
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 1–10 nm | — |
Duration | 1800–86400 s |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,287,116Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 to 6 illustrate a method of forming a multilayer graphene structure according to example embodiments; [0030]
FIG. 2, a sacrificial layer 120 is formed on the growth substrate 110. The sacrificial layer 120 may be formed directly on the growth substrate 110. The …
FIG. 3, a first graphene 131' is grown on the sacrificial layer 120 and a second graphene 132' is epitaxially grown on a lower surface of the first graphene 131'. …
FIG. 4, the first and second graphenes 131' and 132' continues growing and a third graphene 133' epitaxially grows on a lower surface of the second graphene …
FIG. 5, the first, second, and third graphenes 131', 132', and 133' continues growing and a fourth graphene 134' epitaxially grows on a lower surface of the …
FIG. 6, when the growth of the first, second, third, and fourth graphenes 131', 132', 133', 134' is completed, first, second, third, and fourth graphene layers …
FIGS. 7A to 7B illustrate a method of forming a plurality of multilayer graphene structures on a substrate according to example embodiments; and [0031]
FIGS. 8A to 8H illustrate a method of forming a plurality of multilayer graphene structures according to example embodiments.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of forming a multilayer graphene structure, the method comprising: forming a sacrificial layer including a plurality of hexagonal boron nitride (h-BN) films on a growth substrate; growing a first epitaxial graphene layer on the sacrificial layer using a chemical vapor deposition (CVD) method, the growing the first epitaxial graphene layer including removing an uppermost part of the h-BN films to leave remaining h-BN films; forming a second epitaxial graphene layer on an upper surface of the remaining h-BN films using the CVD method, and removing an uppermost part of the remaining h-BN films under the first graphene layer during the forming the second graphene layer using the CVD method; and forming a third epitaxial graphene layer by epitaxially growing the third epitaxial graphene layer on the remaining h-BN films, wherein a lower surface of the second epitaxial graphene layer is on the third epitaxial graphene layer.
The method of claim 1, wherein the growth substrate includes at least one of Cu, Ni, Pt, Rh, Ir, and A g.
The method of claim 1, wherein the forming the sacrificial layer includes growing the h-BN films using a CVD process.
The method of claim 1, wherein the CVD method includes one of a low pressure chemical vapor deposition (LPCVD) method, an atmosphere pressure chemical vapor deposition (APCVD) method, and a plasma enhanced pressure chemical vapor deposition (PECVD) method.
1 1. The method of claim 1, wherein growth temperatures during the forming the first and second epitaxial graphene layers are about 900 * C to about 1050 *C.
The method of claim 1, wherein the CVD method includes C H 4 as a process gas.
The method of claim 1, wherein the CVD method used for forming the second expitaxial graphene layer includes: generating hydrogen atoms by decomposing the CH 4, and removing the uppermost part of the h-BN films from under the first epitaxial graphene layer using the hydrogen atoms generated as the CH 4 is decomposed.
The method of claim 1, further comprising: removing an uppermost part of the remaining h-BN films during the forming the third epitaxial graphene layer; and forming a fourth epitaxial graphene layer by epitaxially growing the fourth epitaxial graphene layer on the remaining h-BN films, wherein a lower surface of the third epitaxial graphene layer is on the fourth epitaxial graphene layer.
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1 7. A method of forming a multilayer graphene structure, the method comprising: forming N sacrificial films on a growth substrate, the N sacrificial films stacked on each other, Application No.: 14/309,128 Attorney Docket No.: 2557S I -002163-US Page 5 of 6 N being an integer greater than 1; forming M graphene layers on the growth substrate using a chemical vapor deposition (CVD) method, M being an integer greater than I and less than or equal to N, the M graphene layers including a (M- l)th graphene layer, the forming M graphene layers including removing at least an uppermost part of the N sacrificial films under the (M-1)th graphene layer while forming the Mth graphene layer during the CVD method and a number of the graphene layers formed during the forming M graphene layers is controlled based on a quantity of the sacrificial films formed during the forming N sacrificial films.
The method of claim 17, wherein the growth substrate includes a catalyst for forming the M graphene layers using the CVD method, and the N sacrificial films are hexagonal boron nitride (h-BN) films.
The method of claim 17, wherein the forming N sacrificial films includes forming N sacrificial films directly on the growth substrate.
Layer stacks claimed or described, ordered top of device to substrate.
multilayer graphene structure
Materials described outside the worked examples.
graphene
hexagonal boron nitride
h-BN
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 1–10 nm | — |
Duration | 1800–86400 s |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,287,116Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 to 6 illustrate a method of forming a multilayer graphene structure according to example embodiments; [0030]
FIG. 2, a sacrificial layer 120 is formed on the growth substrate 110. The sacrificial layer 120 may be formed directly on the growth substrate 110. The …
FIG. 3, a first graphene 131' is grown on the sacrificial layer 120 and a second graphene 132' is epitaxially grown on a lower surface of the first graphene 131'. …
FIG. 4, the first and second graphenes 131' and 132' continues growing and a third graphene 133' epitaxially grows on a lower surface of the second graphene …
FIG. 5, the first, second, and third graphenes 131', 132', and 133' continues growing and a fourth graphene 134' epitaxially grows on a lower surface of the …
FIG. 6, when the growth of the first, second, third, and fourth graphenes 131', 132', 133', 134' is completed, first, second, third, and fourth graphene layers …
FIGS. 7A to 7B illustrate a method of forming a plurality of multilayer graphene structures on a substrate according to example embodiments; and [0031]
FIGS. 8A to 8H illustrate a method of forming a plurality of multilayer graphene structures according to example embodiments.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of forming a multilayer graphene structure, the method comprising: forming a sacrificial layer including a plurality of hexagonal boron nitride (h-BN) films on a growth substrate; growing a first epitaxial graphene layer on the sacrificial layer using a chemical vapor deposition (CVD) method, the growing the first epitaxial graphene layer including removing an uppermost part of the h-BN films to leave remaining h-BN films; forming a second epitaxial graphene layer on an upper surface of the remaining h-BN films using the CVD method, and removing an uppermost part of the remaining h-BN films under the first graphene layer during the forming the second graphene layer using the CVD method; and forming a third epitaxial graphene layer by epitaxially growing the third epitaxial graphene layer on the remaining h-BN films, wherein a lower surface of the second epitaxial graphene layer is on the third epitaxial graphene layer.
The method of claim 1, wherein the growth substrate includes at least one of Cu, Ni, Pt, Rh, Ir, and A g.
The method of claim 1, wherein the forming the sacrificial layer includes growing the h-BN films using a CVD process.
The method of claim 1, wherein the CVD method includes one of a low pressure chemical vapor deposition (LPCVD) method, an atmosphere pressure chemical vapor deposition (APCVD) method, and a plasma enhanced pressure chemical vapor deposition (PECVD) method.
1 1. The method of claim 1, wherein growth temperatures during the forming the first and second epitaxial graphene layers are about 900 * C to about 1050 *C.
The method of claim 1, wherein the CVD method includes C H 4 as a process gas.
The method of claim 1, wherein the CVD method used for forming the second expitaxial graphene layer includes: generating hydrogen atoms by decomposing the CH 4, and removing the uppermost part of the h-BN films from under the first epitaxial graphene layer using the hydrogen atoms generated as the CH 4 is decomposed.
The method of claim 1, further comprising: removing an uppermost part of the remaining h-BN films during the forming the third epitaxial graphene layer; and forming a fourth epitaxial graphene layer by epitaxially growing the fourth epitaxial graphene layer on the remaining h-BN films, wherein a lower surface of the third epitaxial graphene layer is on the fourth epitaxial graphene layer.
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1 7. A method of forming a multilayer graphene structure, the method comprising: forming N sacrificial films on a growth substrate, the N sacrificial films stacked on each other, Application No.: 14/309,128 Attorney Docket No.: 2557S I -002163-US Page 5 of 6 N being an integer greater than 1; forming M graphene layers on the growth substrate using a chemical vapor deposition (CVD) method, M being an integer greater than I and less than or equal to N, the M graphene layers including a (M- l)th graphene layer, the forming M graphene layers including removing at least an uppermost part of the N sacrificial films under the (M-1)th graphene layer while forming the Mth graphene layer during the CVD method and a number of the graphene layers formed during the forming M graphene layers is controlled based on a quantity of the sacrificial films formed during the forming N sacrificial films.
The method of claim 17, wherein the growth substrate includes a catalyst for forming the M graphene layers using the CVD method, and the N sacrificial films are hexagonal boron nitride (h-BN) films.
The method of claim 17, wherein the forming N sacrificial films includes forming N sacrificial films directly on the growth substrate.
Layer stacks claimed or described, ordered top of device to substrate.
multilayer graphene structure
Materials described outside the worked examples.
graphene
hexagonal boron nitride
h-BN
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 1–10 nm | — |
Duration | 1800–86400 s |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,287,116Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 to 6 illustrate a method of forming a multilayer graphene structure according to example embodiments; [0030]
FIG. 2, a sacrificial layer 120 is formed on the growth substrate 110. The sacrificial layer 120 may be formed directly on the growth substrate 110. The …
FIG. 3, a first graphene 131' is grown on the sacrificial layer 120 and a second graphene 132' is epitaxially grown on a lower surface of the first graphene 131'. …
FIG. 4, the first and second graphenes 131' and 132' continues growing and a third graphene 133' epitaxially grows on a lower surface of the second graphene …
FIG. 5, the first, second, and third graphenes 131', 132', and 133' continues growing and a fourth graphene 134' epitaxially grows on a lower surface of the …
FIG. 6, when the growth of the first, second, third, and fourth graphenes 131', 132', 133', 134' is completed, first, second, third, and fourth graphene layers …
FIGS. 7A to 7B illustrate a method of forming a plurality of multilayer graphene structures on a substrate according to example embodiments; and [0031]
FIGS. 8A to 8H illustrate a method of forming a plurality of multilayer graphene structures according to example embodiments.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of forming a multilayer graphene structure, the method comprising: forming a sacrificial layer including a plurality of hexagonal boron nitride (h-BN) films on a growth substrate; growing a first epitaxial graphene layer on the sacrificial layer using a chemical vapor deposition (CVD) method, the growing the first epitaxial graphene layer including removing an uppermost part of the h-BN films to leave remaining h-BN films; forming a second epitaxial graphene layer on an upper surface of the remaining h-BN films using the CVD method, and removing an uppermost part of the remaining h-BN films under the first graphene layer during the forming the second graphene layer using the CVD method; and forming a third epitaxial graphene layer by epitaxially growing the third epitaxial graphene layer on the remaining h-BN films, wherein a lower surface of the second epitaxial graphene layer is on the third epitaxial graphene layer.
The method of claim 1, wherein the growth substrate includes at least one of Cu, Ni, Pt, Rh, Ir, and A g.
The method of claim 1, wherein the forming the sacrificial layer includes growing the h-BN films using a CVD process.
The method of claim 1, wherein the CVD method includes one of a low pressure chemical vapor deposition (LPCVD) method, an atmosphere pressure chemical vapor deposition (APCVD) method, and a plasma enhanced pressure chemical vapor deposition (PECVD) method.
1 1. The method of claim 1, wherein growth temperatures during the forming the first and second epitaxial graphene layers are about 900 * C to about 1050 *C.
The method of claim 1, wherein the CVD method includes C H 4 as a process gas.
The method of claim 1, wherein the CVD method used for forming the second expitaxial graphene layer includes: generating hydrogen atoms by decomposing the CH 4, and removing the uppermost part of the h-BN films from under the first epitaxial graphene layer using the hydrogen atoms generated as the CH 4 is decomposed.
The method of claim 1, further comprising: removing an uppermost part of the remaining h-BN films during the forming the third epitaxial graphene layer; and forming a fourth epitaxial graphene layer by epitaxially growing the fourth epitaxial graphene layer on the remaining h-BN films, wherein a lower surface of the third epitaxial graphene layer is on the fourth epitaxial graphene layer.
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1 7. A method of forming a multilayer graphene structure, the method comprising: forming N sacrificial films on a growth substrate, the N sacrificial films stacked on each other, Application No.: 14/309,128 Attorney Docket No.: 2557S I -002163-US Page 5 of 6 N being an integer greater than 1; forming M graphene layers on the growth substrate using a chemical vapor deposition (CVD) method, M being an integer greater than I and less than or equal to N, the M graphene layers including a (M- l)th graphene layer, the forming M graphene layers including removing at least an uppermost part of the N sacrificial films under the (M-1)th graphene layer while forming the Mth graphene layer during the CVD method and a number of the graphene layers formed during the forming M graphene layers is controlled based on a quantity of the sacrificial films formed during the forming N sacrificial films.
The method of claim 17, wherein the growth substrate includes a catalyst for forming the M graphene layers using the CVD method, and the N sacrificial films are hexagonal boron nitride (h-BN) films.
The method of claim 17, wherein the forming N sacrificial films includes forming N sacrificial films directly on the growth substrate.
Layer stacks claimed or described, ordered top of device to substrate.
multilayer graphene structure
Materials described outside the worked examples.
graphene
hexagonal boron nitride
h-BN
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 1–10 nm | — |
Duration | 1800–86400 s |
Related documents with shared materials, methods, properties, or citations.
growth substrate
methane
CH₄
sacrificial films (generic)
| — |
Flow Rate | 0.1–10 sccm | — |
Duration | 20–60 minutes | — |
Generalized Phase Diagrams for Graphene CVD growth on Copper
A Wide Optical-Gap in Fully sp3-Like Hydrogenated Monolayer Graphene
growth substrate
methane
CH₄
sacrificial films (generic)
| — |
Flow Rate | 0.1–10 sccm | — |
Duration | 20–60 minutes | — |
Generalized Phase Diagrams for Graphene CVD growth on Copper
A Wide Optical-Gap in Fully sp3-Like Hydrogenated Monolayer Graphene
growth substrate
methane
CH₄
sacrificial films (generic)
| — |
Flow Rate | 0.1–10 sccm | — |
Duration | 20–60 minutes | — |
Generalized Phase Diagrams for Graphene CVD growth on Copper
A Wide Optical-Gap in Fully sp3-Like Hydrogenated Monolayer Graphene
growth substrate
methane
CH₄
sacrificial films (generic)
| — |
Flow Rate | 0.1–10 sccm | — |
Duration | 20–60 minutes | — |
Generalized Phase Diagrams for Graphene CVD growth on Copper