Patent
US 10,553,357Monolithic Film of Integrated Highly Oriented Halogenated Graphene
Aruna Zhamu, Bor Z. Jang
US
Copyright © 2026 Matter42. All rights reserved.
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US 10,553,357Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG.1 Schematic of a reverse roll-based GO/GH layer transfer apparatus for producing highly 15 oriented GO/GH films.
FIG.2 Schematic of another reverse roll-based GO/GH layer transfer apparatus for producing highly oriented GO/GH films.
FIG.3 Schematic of yet another reverse roll-based GO/GH layer transfer apparatus for producing highly oriented GO/GH films. 20
FIG.4 Schematic of still another reverse roll-based GO/GH layer transfer apparatus for producing highly oriented GO/GH films.
FIG.5(A) A flow chart illustrating various prior art processes of producing exfoliated graphite products (flexible graphite foils and flexible graphite …
FIG.6(B) An SEM image of a cross-section of a flexible graphite foil, showing many graphite flakes with orientations not parallel to the flexible graphite foil …
FIG.7(C) Schematic drawing and an attendant SEM image to illustrate the for m ation process of a HOGF that is composed of multiple graphene planes that are …
FIG.8 Dielectric breakdown strength of GO film, GO-derived graphene fluoride film (made by the reverse roll transfer coating process), and polyimide film plotted …
FIG.9 Dielectric breakdown strength of GO-derived fluorinated graphene films and chlorinated graphene films (both prepared by a reverse roll transfer procedure …
FIG. 10 Dielectric breakdown strength of GO-derived fluorinated graphene films (prepared by a reverse roll transfer procedure) and GO-derived fluorinated graphene …
FIG. 11 Dielectric constants of GO-derived fluorinated graphene films and brominated graphene films plotted as a function of the degree of fluorination (atomic …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An integrated layer of oriented halogenated graphene, wherein said integrated layer has a thickness from 100 nm to 500 m and a chemical formula of C 6 Z x Oy, wherein Z is a halogen element selected from Cl, I, or a combination thereof, x = 0.01 to 6.0, y =0 to 5.0, and x+y 6.0; and said integrated layer of halogenated graphene has an inter-planar spacing d 00 2 of 0.35 nm to 1.2 nm as determined by X-ray diffraction and wherein said integrated layer has multiple constituent graphene halide planes that are substantially parallel to one another along one direction, with the average deviation angle of the graphene halide planes less than 10 degrees. Previously presented
The integrated layer of oriented halogenated graphene of claim 1, wherein said inter-planar spacing d 002 is from 0.40 nm to 1.0 nm, and wherein said integrated layer of oriented halogenated graphene is free of binders. Previously presented
The integrated layer of oriented halogenated graphene of claim 1, wherein said inter-planar spacing d 002 is from 0.50 nm to 0.90 nm. Original
The integrated layer of oriented halogenated graphene of claim 1, having a polycrystalline structure, wherein said integrated layer has multiple constituent graphene halide planes. Previously presented
The integrated layer of oriented halogenated graphene of claim 1, wherein said average deviation angle of these graphene halide planes is less than 5 degrees. Original
The integrated layer of oriented halogenated graphene of claim 1 having a thickness from 1 m to 100 m. Original
The integrated layer of oriented halogenated graphene of claim 1, having a dielectric constant from 4.0 to 15, an electrical resistivity from 10 8 Q -cm to 10 1 Q -cm, or a dielectric breakdown strength from 5 MV/cm to 15 when measured at a layer thickness of 100 nm. Previously presented
The integrated layer of oriented halogenated graphene of claim 1, having a dielectric constant greater than 10, an electrical resistivity greater than 10 10 Q -cm, or a dielectric breakdown strength greater than 10 MV/cm when measured at a layer thickness of 100 nm. Original
The integrated layer of oriented halogenated graphene of claim 1, having a dielectric constant greater than 15 or a dielectric breakdown strength greater than 12 MV/cm when measured at a layer thickness of 100 nm. Original
The integrated layer of oriented halogenated graphene of claim 1, wherein y =0 and x = 0.01 to 6.0. Original
The integrated layer of oriented halogenated graphene of claim 1, wherein y =0.1 and x = 0.1 to 5.0. Original
A microelectronic device containing the integrated layer of halogenated graphene of claim 1 as a dielectric component. Original
The integrated layer of oriented halogenated graphene of claim 1, wherein said layer has a tensile strength from 60 MPa to 140 MPa and a tensile modulus from 3.0 to 12 GPa. Previously presented
Canceled
Canceled
An integrated layer of oriented halogenated graphene, wherein said integrated layer has a thickness from 10 nm to 100 nm and comprises halogenated graphene particles having a chemical formula of C 6 ZOy, wherein Z is a halogen element selected from Cl, Br, I, a combination thereof, or a combination thereof with F, wherein x = 0.01 to 6.0, y = 0 to 5.0, and x+y 6.0; and said integrated layer of has an inter-planar spacing d002 of 0.35 nm to 1.2 nm as determined by X-ray diffraction and wherein said integrated layer has multiple constituent graphene halide planes that are substantially parallel to one another along one direction, with the average deviation angle of the graphene halide planes less than 10 degrees. Previously presented
The integrated layer of oriented halogenated graphene of claim 16, having a dielectric constant from 4.0 to 15, an electrical resistivity from 10 8 Q-cm, or a dielectric breakdown strength greater from 5 MV/cm to 12 MV/cm, when measured at a layer thickness of 100 nm. Previously presented
The integrated layer of oriented halogenated graphene of claim 16, having an electrical resistivity from 10 8 Q-cm to 10 Q-cm. Previously presented
A microelectronic device containing the integrated layer of halogenated graphene of claim 16 as a dielectric component. Previously presented
Canceled
An integrated layer of oriented halogenated graphene, wherein said integrated layer has a thickness from 100 nm to 500 m and a chemical formula of C 6 ZxO y, wherein Z is a halogen element selected from C l, Br, I, or a combination thereof, x = 0.01 to 6.0, y= 0 to 5.0, and x+y 6.0; and said integrated layer of halogenated graphene has an inter-planar spacing d 00 2 of 0.35 nm to 1.2 nm as determined by X-ray diffraction, comprises multiple halogenated graphene planes bonded through van der Waals forces in the thickness direction, and wherein said integrated layer has multiple constituent halogenated graphene planes that are substantially parallel to one another along one direction, with the average deviation angle of the halogenated graphene planes less than 10 degrees. Currently amended
A microelectronic device containing the claim 21 as a dielectric component. Previously graphene of claim 21, having a dielectric from 10 8 Q -cm to 10 15 Q -cm, or a dielectric measured at a layer thickness of 100 nm. integrated layer of oriented halogenated graphene of presented
The integrated layer of oriented halogenated constant from 4.0 to 15, an electrical resistivity breakdown strength from 5 MV/cm to 15 when Previously presented
Layer stacks claimed or described, ordered top of device to substrate.
microelectronic device with halogenated graphene dielectric
Materials described outside the worked examples.
halogenated graphene (C₆ZxOy, Z = Cl or I)
C₆ZxOy
graphite intercalation compound (GIC)/graphite oxide (GO)
Measurements and analyses referenced in the patent, with their drawing references.
FIG.6(B) An SEM image of a cross-section of a flexible graphite foil, showing many graphite flakes with orientations not parallel to the flexible graphite foil …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
d002 inter-planar spacing (claim 1 range) | 0.35–1.2 nm | C₆ZxOy |
d002 inter-planar spacing (claim 2 range) | 0.4–1 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,553,357Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG.1 Schematic of a reverse roll-based GO/GH layer transfer apparatus for producing highly 15 oriented GO/GH films.
FIG.2 Schematic of another reverse roll-based GO/GH layer transfer apparatus for producing highly oriented GO/GH films.
FIG.3 Schematic of yet another reverse roll-based GO/GH layer transfer apparatus for producing highly oriented GO/GH films. 20
FIG.4 Schematic of still another reverse roll-based GO/GH layer transfer apparatus for producing highly oriented GO/GH films.
FIG.5(A) A flow chart illustrating various prior art processes of producing exfoliated graphite products (flexible graphite foils and flexible graphite …
FIG.6(B) An SEM image of a cross-section of a flexible graphite foil, showing many graphite flakes with orientations not parallel to the flexible graphite foil …
FIG.7(C) Schematic drawing and an attendant SEM image to illustrate the for m ation process of a HOGF that is composed of multiple graphene planes that are …
FIG.8 Dielectric breakdown strength of GO film, GO-derived graphene fluoride film (made by the reverse roll transfer coating process), and polyimide film plotted …
FIG.9 Dielectric breakdown strength of GO-derived fluorinated graphene films and chlorinated graphene films (both prepared by a reverse roll transfer procedure …
FIG. 10 Dielectric breakdown strength of GO-derived fluorinated graphene films (prepared by a reverse roll transfer procedure) and GO-derived fluorinated graphene …
FIG. 11 Dielectric constants of GO-derived fluorinated graphene films and brominated graphene films plotted as a function of the degree of fluorination (atomic …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An integrated layer of oriented halogenated graphene, wherein said integrated layer has a thickness from 100 nm to 500 m and a chemical formula of C 6 Z x Oy, wherein Z is a halogen element selected from Cl, I, or a combination thereof, x = 0.01 to 6.0, y =0 to 5.0, and x+y 6.0; and said integrated layer of halogenated graphene has an inter-planar spacing d 00 2 of 0.35 nm to 1.2 nm as determined by X-ray diffraction and wherein said integrated layer has multiple constituent graphene halide planes that are substantially parallel to one another along one direction, with the average deviation angle of the graphene halide planes less than 10 degrees. Previously presented
The integrated layer of oriented halogenated graphene of claim 1, wherein said inter-planar spacing d 002 is from 0.40 nm to 1.0 nm, and wherein said integrated layer of oriented halogenated graphene is free of binders. Previously presented
The integrated layer of oriented halogenated graphene of claim 1, wherein said inter-planar spacing d 002 is from 0.50 nm to 0.90 nm. Original
The integrated layer of oriented halogenated graphene of claim 1, having a polycrystalline structure, wherein said integrated layer has multiple constituent graphene halide planes. Previously presented
The integrated layer of oriented halogenated graphene of claim 1, wherein said average deviation angle of these graphene halide planes is less than 5 degrees. Original
The integrated layer of oriented halogenated graphene of claim 1 having a thickness from 1 m to 100 m. Original
The integrated layer of oriented halogenated graphene of claim 1, having a dielectric constant from 4.0 to 15, an electrical resistivity from 10 8 Q -cm to 10 1 Q -cm, or a dielectric breakdown strength from 5 MV/cm to 15 when measured at a layer thickness of 100 nm. Previously presented
The integrated layer of oriented halogenated graphene of claim 1, having a dielectric constant greater than 10, an electrical resistivity greater than 10 10 Q -cm, or a dielectric breakdown strength greater than 10 MV/cm when measured at a layer thickness of 100 nm. Original
The integrated layer of oriented halogenated graphene of claim 1, having a dielectric constant greater than 15 or a dielectric breakdown strength greater than 12 MV/cm when measured at a layer thickness of 100 nm. Original
The integrated layer of oriented halogenated graphene of claim 1, wherein y =0 and x = 0.01 to 6.0. Original
The integrated layer of oriented halogenated graphene of claim 1, wherein y =0.1 and x = 0.1 to 5.0. Original
A microelectronic device containing the integrated layer of halogenated graphene of claim 1 as a dielectric component. Original
The integrated layer of oriented halogenated graphene of claim 1, wherein said layer has a tensile strength from 60 MPa to 140 MPa and a tensile modulus from 3.0 to 12 GPa. Previously presented
Canceled
Canceled
An integrated layer of oriented halogenated graphene, wherein said integrated layer has a thickness from 10 nm to 100 nm and comprises halogenated graphene particles having a chemical formula of C 6 ZOy, wherein Z is a halogen element selected from Cl, Br, I, a combination thereof, or a combination thereof with F, wherein x = 0.01 to 6.0, y = 0 to 5.0, and x+y 6.0; and said integrated layer of has an inter-planar spacing d002 of 0.35 nm to 1.2 nm as determined by X-ray diffraction and wherein said integrated layer has multiple constituent graphene halide planes that are substantially parallel to one another along one direction, with the average deviation angle of the graphene halide planes less than 10 degrees. Previously presented
The integrated layer of oriented halogenated graphene of claim 16, having a dielectric constant from 4.0 to 15, an electrical resistivity from 10 8 Q-cm, or a dielectric breakdown strength greater from 5 MV/cm to 12 MV/cm, when measured at a layer thickness of 100 nm. Previously presented
The integrated layer of oriented halogenated graphene of claim 16, having an electrical resistivity from 10 8 Q-cm to 10 Q-cm. Previously presented
A microelectronic device containing the integrated layer of halogenated graphene of claim 16 as a dielectric component. Previously presented
Canceled
An integrated layer of oriented halogenated graphene, wherein said integrated layer has a thickness from 100 nm to 500 m and a chemical formula of C 6 ZxO y, wherein Z is a halogen element selected from C l, Br, I, or a combination thereof, x = 0.01 to 6.0, y= 0 to 5.0, and x+y 6.0; and said integrated layer of halogenated graphene has an inter-planar spacing d 00 2 of 0.35 nm to 1.2 nm as determined by X-ray diffraction, comprises multiple halogenated graphene planes bonded through van der Waals forces in the thickness direction, and wherein said integrated layer has multiple constituent halogenated graphene planes that are substantially parallel to one another along one direction, with the average deviation angle of the halogenated graphene planes less than 10 degrees. Currently amended
A microelectronic device containing the claim 21 as a dielectric component. Previously graphene of claim 21, having a dielectric from 10 8 Q -cm to 10 15 Q -cm, or a dielectric measured at a layer thickness of 100 nm. integrated layer of oriented halogenated graphene of presented
The integrated layer of oriented halogenated constant from 4.0 to 15, an electrical resistivity breakdown strength from 5 MV/cm to 15 when Previously presented
Layer stacks claimed or described, ordered top of device to substrate.
microelectronic device with halogenated graphene dielectric
Materials described outside the worked examples.
halogenated graphene (C₆ZxOy, Z = Cl or I)
C₆ZxOy
graphite intercalation compound (GIC)/graphite oxide (GO)
Measurements and analyses referenced in the patent, with their drawing references.
FIG.6(B) An SEM image of a cross-section of a flexible graphite foil, showing many graphite flakes with orientations not parallel to the flexible graphite foil …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
d002 inter-planar spacing (claim 1 range) | 0.35–1.2 nm | C₆ZxOy |
d002 inter-planar spacing (claim 2 range) | 0.4–1 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,553,357Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG.1 Schematic of a reverse roll-based GO/GH layer transfer apparatus for producing highly 15 oriented GO/GH films.
FIG.2 Schematic of another reverse roll-based GO/GH layer transfer apparatus for producing highly oriented GO/GH films.
FIG.3 Schematic of yet another reverse roll-based GO/GH layer transfer apparatus for producing highly oriented GO/GH films. 20
FIG.4 Schematic of still another reverse roll-based GO/GH layer transfer apparatus for producing highly oriented GO/GH films.
FIG.5(A) A flow chart illustrating various prior art processes of producing exfoliated graphite products (flexible graphite foils and flexible graphite …
FIG.6(B) An SEM image of a cross-section of a flexible graphite foil, showing many graphite flakes with orientations not parallel to the flexible graphite foil …
FIG.7(C) Schematic drawing and an attendant SEM image to illustrate the for m ation process of a HOGF that is composed of multiple graphene planes that are …
FIG.8 Dielectric breakdown strength of GO film, GO-derived graphene fluoride film (made by the reverse roll transfer coating process), and polyimide film plotted …
FIG.9 Dielectric breakdown strength of GO-derived fluorinated graphene films and chlorinated graphene films (both prepared by a reverse roll transfer procedure …
FIG. 10 Dielectric breakdown strength of GO-derived fluorinated graphene films (prepared by a reverse roll transfer procedure) and GO-derived fluorinated graphene …
FIG. 11 Dielectric constants of GO-derived fluorinated graphene films and brominated graphene films plotted as a function of the degree of fluorination (atomic …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An integrated layer of oriented halogenated graphene, wherein said integrated layer has a thickness from 100 nm to 500 m and a chemical formula of C 6 Z x Oy, wherein Z is a halogen element selected from Cl, I, or a combination thereof, x = 0.01 to 6.0, y =0 to 5.0, and x+y 6.0; and said integrated layer of halogenated graphene has an inter-planar spacing d 00 2 of 0.35 nm to 1.2 nm as determined by X-ray diffraction and wherein said integrated layer has multiple constituent graphene halide planes that are substantially parallel to one another along one direction, with the average deviation angle of the graphene halide planes less than 10 degrees. Previously presented
The integrated layer of oriented halogenated graphene of claim 1, wherein said inter-planar spacing d 002 is from 0.40 nm to 1.0 nm, and wherein said integrated layer of oriented halogenated graphene is free of binders. Previously presented
The integrated layer of oriented halogenated graphene of claim 1, wherein said inter-planar spacing d 002 is from 0.50 nm to 0.90 nm. Original
The integrated layer of oriented halogenated graphene of claim 1, having a polycrystalline structure, wherein said integrated layer has multiple constituent graphene halide planes. Previously presented
The integrated layer of oriented halogenated graphene of claim 1, wherein said average deviation angle of these graphene halide planes is less than 5 degrees. Original
The integrated layer of oriented halogenated graphene of claim 1 having a thickness from 1 m to 100 m. Original
The integrated layer of oriented halogenated graphene of claim 1, having a dielectric constant from 4.0 to 15, an electrical resistivity from 10 8 Q -cm to 10 1 Q -cm, or a dielectric breakdown strength from 5 MV/cm to 15 when measured at a layer thickness of 100 nm. Previously presented
The integrated layer of oriented halogenated graphene of claim 1, having a dielectric constant greater than 10, an electrical resistivity greater than 10 10 Q -cm, or a dielectric breakdown strength greater than 10 MV/cm when measured at a layer thickness of 100 nm. Original
The integrated layer of oriented halogenated graphene of claim 1, having a dielectric constant greater than 15 or a dielectric breakdown strength greater than 12 MV/cm when measured at a layer thickness of 100 nm. Original
The integrated layer of oriented halogenated graphene of claim 1, wherein y =0 and x = 0.01 to 6.0. Original
The integrated layer of oriented halogenated graphene of claim 1, wherein y =0.1 and x = 0.1 to 5.0. Original
A microelectronic device containing the integrated layer of halogenated graphene of claim 1 as a dielectric component. Original
The integrated layer of oriented halogenated graphene of claim 1, wherein said layer has a tensile strength from 60 MPa to 140 MPa and a tensile modulus from 3.0 to 12 GPa. Previously presented
Canceled
Canceled
An integrated layer of oriented halogenated graphene, wherein said integrated layer has a thickness from 10 nm to 100 nm and comprises halogenated graphene particles having a chemical formula of C 6 ZOy, wherein Z is a halogen element selected from Cl, Br, I, a combination thereof, or a combination thereof with F, wherein x = 0.01 to 6.0, y = 0 to 5.0, and x+y 6.0; and said integrated layer of has an inter-planar spacing d002 of 0.35 nm to 1.2 nm as determined by X-ray diffraction and wherein said integrated layer has multiple constituent graphene halide planes that are substantially parallel to one another along one direction, with the average deviation angle of the graphene halide planes less than 10 degrees. Previously presented
The integrated layer of oriented halogenated graphene of claim 16, having a dielectric constant from 4.0 to 15, an electrical resistivity from 10 8 Q-cm, or a dielectric breakdown strength greater from 5 MV/cm to 12 MV/cm, when measured at a layer thickness of 100 nm. Previously presented
The integrated layer of oriented halogenated graphene of claim 16, having an electrical resistivity from 10 8 Q-cm to 10 Q-cm. Previously presented
A microelectronic device containing the integrated layer of halogenated graphene of claim 16 as a dielectric component. Previously presented
Canceled
An integrated layer of oriented halogenated graphene, wherein said integrated layer has a thickness from 100 nm to 500 m and a chemical formula of C 6 ZxO y, wherein Z is a halogen element selected from C l, Br, I, or a combination thereof, x = 0.01 to 6.0, y= 0 to 5.0, and x+y 6.0; and said integrated layer of halogenated graphene has an inter-planar spacing d 00 2 of 0.35 nm to 1.2 nm as determined by X-ray diffraction, comprises multiple halogenated graphene planes bonded through van der Waals forces in the thickness direction, and wherein said integrated layer has multiple constituent halogenated graphene planes that are substantially parallel to one another along one direction, with the average deviation angle of the halogenated graphene planes less than 10 degrees. Currently amended
A microelectronic device containing the claim 21 as a dielectric component. Previously graphene of claim 21, having a dielectric from 10 8 Q -cm to 10 15 Q -cm, or a dielectric measured at a layer thickness of 100 nm. integrated layer of oriented halogenated graphene of presented
The integrated layer of oriented halogenated constant from 4.0 to 15, an electrical resistivity breakdown strength from 5 MV/cm to 15 when Previously presented
Layer stacks claimed or described, ordered top of device to substrate.
microelectronic device with halogenated graphene dielectric
Materials described outside the worked examples.
halogenated graphene (C₆ZxOy, Z = Cl or I)
C₆ZxOy
graphite intercalation compound (GIC)/graphite oxide (GO)
Measurements and analyses referenced in the patent, with their drawing references.
FIG.6(B) An SEM image of a cross-section of a flexible graphite foil, showing many graphite flakes with orientations not parallel to the flexible graphite foil …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
d002 inter-planar spacing (claim 1 range) | 0.35–1.2 nm | C₆ZxOy |
d002 inter-planar spacing (claim 2 range) | 0.4–1 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,553,357Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG.1 Schematic of a reverse roll-based GO/GH layer transfer apparatus for producing highly 15 oriented GO/GH films.
FIG.2 Schematic of another reverse roll-based GO/GH layer transfer apparatus for producing highly oriented GO/GH films.
FIG.3 Schematic of yet another reverse roll-based GO/GH layer transfer apparatus for producing highly oriented GO/GH films. 20
FIG.4 Schematic of still another reverse roll-based GO/GH layer transfer apparatus for producing highly oriented GO/GH films.
FIG.5(A) A flow chart illustrating various prior art processes of producing exfoliated graphite products (flexible graphite foils and flexible graphite …
FIG.6(B) An SEM image of a cross-section of a flexible graphite foil, showing many graphite flakes with orientations not parallel to the flexible graphite foil …
FIG.7(C) Schematic drawing and an attendant SEM image to illustrate the for m ation process of a HOGF that is composed of multiple graphene planes that are …
FIG.8 Dielectric breakdown strength of GO film, GO-derived graphene fluoride film (made by the reverse roll transfer coating process), and polyimide film plotted …
FIG.9 Dielectric breakdown strength of GO-derived fluorinated graphene films and chlorinated graphene films (both prepared by a reverse roll transfer procedure …
FIG. 10 Dielectric breakdown strength of GO-derived fluorinated graphene films (prepared by a reverse roll transfer procedure) and GO-derived fluorinated graphene …
FIG. 11 Dielectric constants of GO-derived fluorinated graphene films and brominated graphene films plotted as a function of the degree of fluorination (atomic …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An integrated layer of oriented halogenated graphene, wherein said integrated layer has a thickness from 100 nm to 500 m and a chemical formula of C 6 Z x Oy, wherein Z is a halogen element selected from Cl, I, or a combination thereof, x = 0.01 to 6.0, y =0 to 5.0, and x+y 6.0; and said integrated layer of halogenated graphene has an inter-planar spacing d 00 2 of 0.35 nm to 1.2 nm as determined by X-ray diffraction and wherein said integrated layer has multiple constituent graphene halide planes that are substantially parallel to one another along one direction, with the average deviation angle of the graphene halide planes less than 10 degrees. Previously presented
The integrated layer of oriented halogenated graphene of claim 1, wherein said inter-planar spacing d 002 is from 0.40 nm to 1.0 nm, and wherein said integrated layer of oriented halogenated graphene is free of binders. Previously presented
The integrated layer of oriented halogenated graphene of claim 1, wherein said inter-planar spacing d 002 is from 0.50 nm to 0.90 nm. Original
The integrated layer of oriented halogenated graphene of claim 1, having a polycrystalline structure, wherein said integrated layer has multiple constituent graphene halide planes. Previously presented
The integrated layer of oriented halogenated graphene of claim 1, wherein said average deviation angle of these graphene halide planes is less than 5 degrees. Original
The integrated layer of oriented halogenated graphene of claim 1 having a thickness from 1 m to 100 m. Original
The integrated layer of oriented halogenated graphene of claim 1, having a dielectric constant from 4.0 to 15, an electrical resistivity from 10 8 Q -cm to 10 1 Q -cm, or a dielectric breakdown strength from 5 MV/cm to 15 when measured at a layer thickness of 100 nm. Previously presented
The integrated layer of oriented halogenated graphene of claim 1, having a dielectric constant greater than 10, an electrical resistivity greater than 10 10 Q -cm, or a dielectric breakdown strength greater than 10 MV/cm when measured at a layer thickness of 100 nm. Original
The integrated layer of oriented halogenated graphene of claim 1, having a dielectric constant greater than 15 or a dielectric breakdown strength greater than 12 MV/cm when measured at a layer thickness of 100 nm. Original
The integrated layer of oriented halogenated graphene of claim 1, wherein y =0 and x = 0.01 to 6.0. Original
The integrated layer of oriented halogenated graphene of claim 1, wherein y =0.1 and x = 0.1 to 5.0. Original
A microelectronic device containing the integrated layer of halogenated graphene of claim 1 as a dielectric component. Original
The integrated layer of oriented halogenated graphene of claim 1, wherein said layer has a tensile strength from 60 MPa to 140 MPa and a tensile modulus from 3.0 to 12 GPa. Previously presented
Canceled
Canceled
An integrated layer of oriented halogenated graphene, wherein said integrated layer has a thickness from 10 nm to 100 nm and comprises halogenated graphene particles having a chemical formula of C 6 ZOy, wherein Z is a halogen element selected from Cl, Br, I, a combination thereof, or a combination thereof with F, wherein x = 0.01 to 6.0, y = 0 to 5.0, and x+y 6.0; and said integrated layer of has an inter-planar spacing d002 of 0.35 nm to 1.2 nm as determined by X-ray diffraction and wherein said integrated layer has multiple constituent graphene halide planes that are substantially parallel to one another along one direction, with the average deviation angle of the graphene halide planes less than 10 degrees. Previously presented
The integrated layer of oriented halogenated graphene of claim 16, having a dielectric constant from 4.0 to 15, an electrical resistivity from 10 8 Q-cm, or a dielectric breakdown strength greater from 5 MV/cm to 12 MV/cm, when measured at a layer thickness of 100 nm. Previously presented
The integrated layer of oriented halogenated graphene of claim 16, having an electrical resistivity from 10 8 Q-cm to 10 Q-cm. Previously presented
A microelectronic device containing the integrated layer of halogenated graphene of claim 16 as a dielectric component. Previously presented
Canceled
An integrated layer of oriented halogenated graphene, wherein said integrated layer has a thickness from 100 nm to 500 m and a chemical formula of C 6 ZxO y, wherein Z is a halogen element selected from C l, Br, I, or a combination thereof, x = 0.01 to 6.0, y= 0 to 5.0, and x+y 6.0; and said integrated layer of halogenated graphene has an inter-planar spacing d 00 2 of 0.35 nm to 1.2 nm as determined by X-ray diffraction, comprises multiple halogenated graphene planes bonded through van der Waals forces in the thickness direction, and wherein said integrated layer has multiple constituent halogenated graphene planes that are substantially parallel to one another along one direction, with the average deviation angle of the halogenated graphene planes less than 10 degrees. Currently amended
A microelectronic device containing the claim 21 as a dielectric component. Previously graphene of claim 21, having a dielectric from 10 8 Q -cm to 10 15 Q -cm, or a dielectric measured at a layer thickness of 100 nm. integrated layer of oriented halogenated graphene of presented
The integrated layer of oriented halogenated constant from 4.0 to 15, an electrical resistivity breakdown strength from 5 MV/cm to 15 when Previously presented
Layer stacks claimed or described, ordered top of device to substrate.
microelectronic device with halogenated graphene dielectric
Materials described outside the worked examples.
halogenated graphene (C₆ZxOy, Z = Cl or I)
C₆ZxOy
graphite intercalation compound (GIC)/graphite oxide (GO)
Measurements and analyses referenced in the patent, with their drawing references.
FIG.6(B) An SEM image of a cross-section of a flexible graphite foil, showing many graphite flakes with orientations not parallel to the flexible graphite foil …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
d002 inter-planar spacing (claim 1 range) | 0.35–1.2 nm | C₆ZxOy |
d002 inter-planar spacing (claim 2 range) | 0.4–1 nm |
Related documents with shared materials, methods, properties, or citations.
graphene/nano graphene platelets (NGPs)
reduced graphene oxide (RGO)
FIG.7(C) Schematic drawing and an attendant SEM image to illustrate the for m ation process of a HOGF that is composed of multiple graphene planes that are …
FIG.7(C) Schematic drawing and an attendant SEM image to illustrate the for m ation process of a HOGF that is composed of multiple graphene planes that are …
FIG.8 Dielectric breakdown strength of GO film, GO-derived graphene fluoride film (made by the reverse roll transfer coating process), and polyimide film plotted …
d002 inter-planar spacing (claim 3 range) | 0.5–0.9 nm | C₆ZxOy |
dielectric constant (claim 9 range) | 4–15 | C₆ZxOy |
dielectric breakdown strength (claim 9 range) | 5–15 MV/cm | C₆ZxOy |
dielectric constant (claim 10 minimum) | ≥ 10 | C₆ZxOy |
dielectric breakdown strength (claim 10 minimum) | ≥ 10 MV/cm | C₆ZxOy |
dielectric constant (claim 11 minimum) | ≥ 15 | C₆ZxOy |
dielectric breakdown strength (claim 11 minimum) | ≥ 12 MV/cm | C₆ZxOy |
tensile strength (claim 15 range) | 60–140 MPa | C₆ZxOy |
tensile modulus (claim 15 range) | 3–12 GPa | C₆ZxOy |
d002 inter-planar spacing (abstract, typical range) | 0.4–1 nm | C₆ZxOy |
Duration | 15–120 s | — |
Duration | 48–72 hours | — |
Duration | 3–7 minutes | — |
Duration | 30–70 minutes | — |
— | 140–300 W | — |
— | 10–30 W | — |
Duration | 5–16 hours | — |
Duration | 1–8 hours | — |
Duration | 1–24 hours | — |
Duration | 48–96 hours | — |
Duration | 10–100 minutes | — |
Duration | 1–10 hours | — |
Thickness | ≤ 0.4 nm | — |
Thickness | ≤ 1 nm | — |
Thickness | ≤ 10 nm | — |
Thickness | ≥ 1 nm | — |
Thickness | ≥ 1 mm | — |
Thickness | 10–100 nm | — |
graphene/nano graphene platelets (NGPs)
reduced graphene oxide (RGO)
FIG.7(C) Schematic drawing and an attendant SEM image to illustrate the for m ation process of a HOGF that is composed of multiple graphene planes that are …
FIG.7(C) Schematic drawing and an attendant SEM image to illustrate the for m ation process of a HOGF that is composed of multiple graphene planes that are …
FIG.8 Dielectric breakdown strength of GO film, GO-derived graphene fluoride film (made by the reverse roll transfer coating process), and polyimide film plotted …
d002 inter-planar spacing (claim 3 range) | 0.5–0.9 nm | C₆ZxOy |
dielectric constant (claim 9 range) | 4–15 | C₆ZxOy |
dielectric breakdown strength (claim 9 range) | 5–15 MV/cm | C₆ZxOy |
dielectric constant (claim 10 minimum) | ≥ 10 | C₆ZxOy |
dielectric breakdown strength (claim 10 minimum) | ≥ 10 MV/cm | C₆ZxOy |
dielectric constant (claim 11 minimum) | ≥ 15 | C₆ZxOy |
dielectric breakdown strength (claim 11 minimum) | ≥ 12 MV/cm | C₆ZxOy |
tensile strength (claim 15 range) | 60–140 MPa | C₆ZxOy |
tensile modulus (claim 15 range) | 3–12 GPa | C₆ZxOy |
d002 inter-planar spacing (abstract, typical range) | 0.4–1 nm | C₆ZxOy |
Duration | 15–120 s | — |
Duration | 48–72 hours | — |
Duration | 3–7 minutes | — |
Duration | 30–70 minutes | — |
— | 140–300 W | — |
— | 10–30 W | — |
Duration | 5–16 hours | — |
Duration | 1–8 hours | — |
Duration | 1–24 hours | — |
Duration | 48–96 hours | — |
Duration | 10–100 minutes | — |
Duration | 1–10 hours | — |
Thickness | ≤ 0.4 nm | — |
Thickness | ≤ 1 nm | — |
Thickness | ≤ 10 nm | — |
Thickness | ≥ 1 nm | — |
Thickness | ≥ 1 mm | — |
Thickness | 10–100 nm | — |
graphene/nano graphene platelets (NGPs)
reduced graphene oxide (RGO)
FIG.7(C) Schematic drawing and an attendant SEM image to illustrate the for m ation process of a HOGF that is composed of multiple graphene planes that are …
FIG.7(C) Schematic drawing and an attendant SEM image to illustrate the for m ation process of a HOGF that is composed of multiple graphene planes that are …
FIG.8 Dielectric breakdown strength of GO film, GO-derived graphene fluoride film (made by the reverse roll transfer coating process), and polyimide film plotted …
d002 inter-planar spacing (claim 3 range) | 0.5–0.9 nm | C₆ZxOy |
dielectric constant (claim 9 range) | 4–15 | C₆ZxOy |
dielectric breakdown strength (claim 9 range) | 5–15 MV/cm | C₆ZxOy |
dielectric constant (claim 10 minimum) | ≥ 10 | C₆ZxOy |
dielectric breakdown strength (claim 10 minimum) | ≥ 10 MV/cm | C₆ZxOy |
dielectric constant (claim 11 minimum) | ≥ 15 | C₆ZxOy |
dielectric breakdown strength (claim 11 minimum) | ≥ 12 MV/cm | C₆ZxOy |
tensile strength (claim 15 range) | 60–140 MPa | C₆ZxOy |
tensile modulus (claim 15 range) | 3–12 GPa | C₆ZxOy |
d002 inter-planar spacing (abstract, typical range) | 0.4–1 nm | C₆ZxOy |
Duration | 15–120 s | — |
Duration | 48–72 hours | — |
Duration | 3–7 minutes | — |
Duration | 30–70 minutes | — |
— | 140–300 W | — |
— | 10–30 W | — |
Duration | 5–16 hours | — |
Duration | 1–8 hours | — |
Duration | 1–24 hours | — |
Duration | 48–96 hours | — |
Duration | 10–100 minutes | — |
Duration | 1–10 hours | — |
Thickness | ≤ 0.4 nm | — |
Thickness | ≤ 1 nm | — |
Thickness | ≤ 10 nm | — |
Thickness | ≥ 1 nm | — |
Thickness | ≥ 1 mm | — |
Thickness | 10–100 nm | — |
graphene/nano graphene platelets (NGPs)
reduced graphene oxide (RGO)
FIG.7(C) Schematic drawing and an attendant SEM image to illustrate the for m ation process of a HOGF that is composed of multiple graphene planes that are …
FIG.7(C) Schematic drawing and an attendant SEM image to illustrate the for m ation process of a HOGF that is composed of multiple graphene planes that are …
FIG.8 Dielectric breakdown strength of GO film, GO-derived graphene fluoride film (made by the reverse roll transfer coating process), and polyimide film plotted …
d002 inter-planar spacing (claim 3 range) | 0.5–0.9 nm | C₆ZxOy |
dielectric constant (claim 9 range) | 4–15 | C₆ZxOy |
dielectric breakdown strength (claim 9 range) | 5–15 MV/cm | C₆ZxOy |
dielectric constant (claim 10 minimum) | ≥ 10 | C₆ZxOy |
dielectric breakdown strength (claim 10 minimum) | ≥ 10 MV/cm | C₆ZxOy |
dielectric constant (claim 11 minimum) | ≥ 15 | C₆ZxOy |
dielectric breakdown strength (claim 11 minimum) | ≥ 12 MV/cm | C₆ZxOy |
tensile strength (claim 15 range) | 60–140 MPa | C₆ZxOy |
tensile modulus (claim 15 range) | 3–12 GPa | C₆ZxOy |
d002 inter-planar spacing (abstract, typical range) | 0.4–1 nm | C₆ZxOy |
Duration | 15–120 s | — |
Duration | 48–72 hours | — |
Duration | 3–7 minutes | — |
Duration | 30–70 minutes | — |
— | 140–300 W | — |
— | 10–30 W | — |
Duration | 5–16 hours | — |
Duration | 1–8 hours | — |
Duration | 1–24 hours | — |
Duration | 48–96 hours | — |
Duration | 10–100 minutes | — |
Duration | 1–10 hours | — |
Thickness | ≤ 0.4 nm | — |
Thickness | ≤ 1 nm | — |
Thickness | ≤ 10 nm | — |
Thickness | ≥ 1 nm | — |
Thickness | ≥ 1 mm | — |
Thickness | 10–100 nm | — |