Patent
US 11,094,538METHOD OF FORMING GRAPHENE
Keunwook SHIN
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 11,094,538Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 to 8 are views illustrating a method of forming graphene according to an example embodiment; [0029]
FIG. 2, in a state in which the bias is applied to the substrate 11 0, power for generating plasma is applied to the inside of the reaction chamber from a …
FIG. 3, when plasma power is applied to the inside of the reaction chamber in a state in which a bias is applied to the substrate 110, gas plasma (for example, …
FIG. 4A illustrates roughness as an example of the activation sites 132. [0050] When gas plasma is generated by applying plasma power in a state in which a …
FIG. 5 illustrates an example in which the reaction gas includes a carbon source, an inert gas, and hydrogen gas, wherein acetylene gas and argon gas are …
FIG. 6, power for generating plasma inside the reaction chamber is applied from a plasma power supply (not shown). The plasma power applied in the graphene …
FIG. 7) may be formed on the surface 110 a of the substrate 110 through the above-described substrate pretreatment process. Owing to the charges 131 or the …
FIG. 8, as described above, as the activated carbon 140 is continuously adsorbed on the surface 110a of the substrate 110, graphene 150 may be grown and formed …
FIG. 9 is a view illustrating Raman spectra measured from surfaces of silicon substrates after graphene was grown on the surfaces of the silicon substrates …
FIG. 10 is a view illustrating the amounts of Si-C bonds formed on surfaces of silicon substrates after graphene was grown on the surfaces of the silicon …
FIGS. 11 to 12 are views illustrating a method of forming graphene according to another example embodiment; and [0032]
FIG. 12) is injected into a reaction chamber. Here, the reaction gas may include a carbon source. For example, the carbon source may include at least one of …
FIG. 13 is a cross-sectional view of an apparatus for forming graphene according to some example embodiments.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of forming graphene, the method comprising: treating a surface of a substrate placed in a reaction chamber with plasma while applying a bias to the substrate; and growing graphene on the surface of the substrate by plasma enhanced chemical vapor deposition (PECVD),herecn l'th;g_!!aEst ace 0 ofthe su bstrate includes Tgri ing ~g ck ast one_ ot Currently amended
The method of claim 1, wherein the activation sites includes at least one of roughness and defects. Currently amended
The method of claim 1, wherein the treating the surface of the substrate includes: injecting a pretreatment gas into the reaction chamber; applying the bias to the substrate; and generating the plasma in the reaction chamber while applying the bias to the substrate. Original
The method of claim 1, wherein the growing of the graphene includes: injecting a reaction gas including a carbon source into the reaction chamber; and directly growing the graphene on the surface of the substrate by generating plasma in the reaction chamber. Original
The method of claim 1, wherein the substrate includes at least one of a group IV semiconductor material, a semiconductor compound, a metal, and an insulating material. Original
Canceled
A method of forming graphene, the method comprising: treating a surface of a substrate by applying a bias to the substrate; and growing graphene on the surface of the substrate,w..e.ei.:;,. `;;.: includes Currently amended
The method of claim 18, wherein the treating the surface of the substrate includes: injecting a pretreatment gas into a reaction chamber; applying the bias to the substrate; and generating plasma in the reaction chamber while applying the bias to the substrate. Original
The method of claim 18, wherein the growing the graphene includes: injecting a reaction gas including a carbon source into a reaction chamber; and directly growing the graphene on the surface of the substrate by generating plasma in the reaction chamber. Original
A method of forming graphene, the method comprising: preparing a substrate including a plasma-treated surface, the preparing the substrate including performing a plasma operation on the substrate while applying a bias to the substrate, growing graphene on the plasma-treated surface of the substrate by plasma enhanced chemical vapor deposition (PECVD), w:1 he_ plasma-treated Osrf tflt_ su;strate includes at one cf _.av~g & ac;Se.t ri cve C₂ n tfl thf plasma-treated surface Currently amended
The method of claim 21, wherein the preparing the substrate includes: placing the substrate including the plasma-treated surface in a reaction chamber, injecting a pretreatment gas into the reaction chamber; applying the bias to the substrate; and generating a plasma in the reaction chamber while applying the bias to the substrate in the reaction chamber. Original
The method of claim 21, wherein the preparing the substrate is performed at a processing temperature of about 1000 o C or less, a processing pressure in a range of about 0.02 torr to about 5.00 torr, a bias power in a range from about 1 W to about 100 W, and a plasma power in range from about 10 W to about 4000 W. Original
The method of claim 21, wherein the growing graphene on the plasma-treated surface of the substrate includes: injecting a reaction gas including a carbon source into a reaction chamber; and generating a plasma in the reaction chamber from the reaction gas while the substrate including the plasma-treated surface is in the reaction chamber. Original
Materials described outside the worked examples.
graphene
pretreatment gas
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 9 is a view illustrating Raman spectra measured from surfaces of silicon substrates after graphene was grown on the surfaces of the silicon substrates …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
— | 1–100 W | — |
— | 10–4000 W |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,094,538Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 to 8 are views illustrating a method of forming graphene according to an example embodiment; [0029]
FIG. 2, in a state in which the bias is applied to the substrate 11 0, power for generating plasma is applied to the inside of the reaction chamber from a …
FIG. 3, when plasma power is applied to the inside of the reaction chamber in a state in which a bias is applied to the substrate 110, gas plasma (for example, …
FIG. 4A illustrates roughness as an example of the activation sites 132. [0050] When gas plasma is generated by applying plasma power in a state in which a …
FIG. 5 illustrates an example in which the reaction gas includes a carbon source, an inert gas, and hydrogen gas, wherein acetylene gas and argon gas are …
FIG. 6, power for generating plasma inside the reaction chamber is applied from a plasma power supply (not shown). The plasma power applied in the graphene …
FIG. 7) may be formed on the surface 110 a of the substrate 110 through the above-described substrate pretreatment process. Owing to the charges 131 or the …
FIG. 8, as described above, as the activated carbon 140 is continuously adsorbed on the surface 110a of the substrate 110, graphene 150 may be grown and formed …
FIG. 9 is a view illustrating Raman spectra measured from surfaces of silicon substrates after graphene was grown on the surfaces of the silicon substrates …
FIG. 10 is a view illustrating the amounts of Si-C bonds formed on surfaces of silicon substrates after graphene was grown on the surfaces of the silicon …
FIGS. 11 to 12 are views illustrating a method of forming graphene according to another example embodiment; and [0032]
FIG. 12) is injected into a reaction chamber. Here, the reaction gas may include a carbon source. For example, the carbon source may include at least one of …
FIG. 13 is a cross-sectional view of an apparatus for forming graphene according to some example embodiments.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of forming graphene, the method comprising: treating a surface of a substrate placed in a reaction chamber with plasma while applying a bias to the substrate; and growing graphene on the surface of the substrate by plasma enhanced chemical vapor deposition (PECVD),herecn l'th;g_!!aEst ace 0 ofthe su bstrate includes Tgri ing ~g ck ast one_ ot Currently amended
The method of claim 1, wherein the activation sites includes at least one of roughness and defects. Currently amended
The method of claim 1, wherein the treating the surface of the substrate includes: injecting a pretreatment gas into the reaction chamber; applying the bias to the substrate; and generating the plasma in the reaction chamber while applying the bias to the substrate. Original
The method of claim 1, wherein the growing of the graphene includes: injecting a reaction gas including a carbon source into the reaction chamber; and directly growing the graphene on the surface of the substrate by generating plasma in the reaction chamber. Original
The method of claim 1, wherein the substrate includes at least one of a group IV semiconductor material, a semiconductor compound, a metal, and an insulating material. Original
Canceled
A method of forming graphene, the method comprising: treating a surface of a substrate by applying a bias to the substrate; and growing graphene on the surface of the substrate,w..e.ei.:;,. `;;.: includes Currently amended
The method of claim 18, wherein the treating the surface of the substrate includes: injecting a pretreatment gas into a reaction chamber; applying the bias to the substrate; and generating plasma in the reaction chamber while applying the bias to the substrate. Original
The method of claim 18, wherein the growing the graphene includes: injecting a reaction gas including a carbon source into a reaction chamber; and directly growing the graphene on the surface of the substrate by generating plasma in the reaction chamber. Original
A method of forming graphene, the method comprising: preparing a substrate including a plasma-treated surface, the preparing the substrate including performing a plasma operation on the substrate while applying a bias to the substrate, growing graphene on the plasma-treated surface of the substrate by plasma enhanced chemical vapor deposition (PECVD), w:1 he_ plasma-treated Osrf tflt_ su;strate includes at one cf _.av~g & ac;Se.t ri cve C₂ n tfl thf plasma-treated surface Currently amended
The method of claim 21, wherein the preparing the substrate includes: placing the substrate including the plasma-treated surface in a reaction chamber, injecting a pretreatment gas into the reaction chamber; applying the bias to the substrate; and generating a plasma in the reaction chamber while applying the bias to the substrate in the reaction chamber. Original
The method of claim 21, wherein the preparing the substrate is performed at a processing temperature of about 1000 o C or less, a processing pressure in a range of about 0.02 torr to about 5.00 torr, a bias power in a range from about 1 W to about 100 W, and a plasma power in range from about 10 W to about 4000 W. Original
The method of claim 21, wherein the growing graphene on the plasma-treated surface of the substrate includes: injecting a reaction gas including a carbon source into a reaction chamber; and generating a plasma in the reaction chamber from the reaction gas while the substrate including the plasma-treated surface is in the reaction chamber. Original
Materials described outside the worked examples.
graphene
pretreatment gas
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 9 is a view illustrating Raman spectra measured from surfaces of silicon substrates after graphene was grown on the surfaces of the silicon substrates …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
— | 1–100 W | — |
— | 10–4000 W |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,094,538Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 to 8 are views illustrating a method of forming graphene according to an example embodiment; [0029]
FIG. 2, in a state in which the bias is applied to the substrate 11 0, power for generating plasma is applied to the inside of the reaction chamber from a …
FIG. 3, when plasma power is applied to the inside of the reaction chamber in a state in which a bias is applied to the substrate 110, gas plasma (for example, …
FIG. 4A illustrates roughness as an example of the activation sites 132. [0050] When gas plasma is generated by applying plasma power in a state in which a …
FIG. 5 illustrates an example in which the reaction gas includes a carbon source, an inert gas, and hydrogen gas, wherein acetylene gas and argon gas are …
FIG. 6, power for generating plasma inside the reaction chamber is applied from a plasma power supply (not shown). The plasma power applied in the graphene …
FIG. 7) may be formed on the surface 110 a of the substrate 110 through the above-described substrate pretreatment process. Owing to the charges 131 or the …
FIG. 8, as described above, as the activated carbon 140 is continuously adsorbed on the surface 110a of the substrate 110, graphene 150 may be grown and formed …
FIG. 9 is a view illustrating Raman spectra measured from surfaces of silicon substrates after graphene was grown on the surfaces of the silicon substrates …
FIG. 10 is a view illustrating the amounts of Si-C bonds formed on surfaces of silicon substrates after graphene was grown on the surfaces of the silicon …
FIGS. 11 to 12 are views illustrating a method of forming graphene according to another example embodiment; and [0032]
FIG. 12) is injected into a reaction chamber. Here, the reaction gas may include a carbon source. For example, the carbon source may include at least one of …
FIG. 13 is a cross-sectional view of an apparatus for forming graphene according to some example embodiments.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of forming graphene, the method comprising: treating a surface of a substrate placed in a reaction chamber with plasma while applying a bias to the substrate; and growing graphene on the surface of the substrate by plasma enhanced chemical vapor deposition (PECVD),herecn l'th;g_!!aEst ace 0 ofthe su bstrate includes Tgri ing ~g ck ast one_ ot Currently amended
The method of claim 1, wherein the activation sites includes at least one of roughness and defects. Currently amended
The method of claim 1, wherein the treating the surface of the substrate includes: injecting a pretreatment gas into the reaction chamber; applying the bias to the substrate; and generating the plasma in the reaction chamber while applying the bias to the substrate. Original
The method of claim 1, wherein the growing of the graphene includes: injecting a reaction gas including a carbon source into the reaction chamber; and directly growing the graphene on the surface of the substrate by generating plasma in the reaction chamber. Original
The method of claim 1, wherein the substrate includes at least one of a group IV semiconductor material, a semiconductor compound, a metal, and an insulating material. Original
Canceled
A method of forming graphene, the method comprising: treating a surface of a substrate by applying a bias to the substrate; and growing graphene on the surface of the substrate,w..e.ei.:;,. `;;.: includes Currently amended
The method of claim 18, wherein the treating the surface of the substrate includes: injecting a pretreatment gas into a reaction chamber; applying the bias to the substrate; and generating plasma in the reaction chamber while applying the bias to the substrate. Original
The method of claim 18, wherein the growing the graphene includes: injecting a reaction gas including a carbon source into a reaction chamber; and directly growing the graphene on the surface of the substrate by generating plasma in the reaction chamber. Original
A method of forming graphene, the method comprising: preparing a substrate including a plasma-treated surface, the preparing the substrate including performing a plasma operation on the substrate while applying a bias to the substrate, growing graphene on the plasma-treated surface of the substrate by plasma enhanced chemical vapor deposition (PECVD), w:1 he_ plasma-treated Osrf tflt_ su;strate includes at one cf _.av~g & ac;Se.t ri cve C₂ n tfl thf plasma-treated surface Currently amended
The method of claim 21, wherein the preparing the substrate includes: placing the substrate including the plasma-treated surface in a reaction chamber, injecting a pretreatment gas into the reaction chamber; applying the bias to the substrate; and generating a plasma in the reaction chamber while applying the bias to the substrate in the reaction chamber. Original
The method of claim 21, wherein the preparing the substrate is performed at a processing temperature of about 1000 o C or less, a processing pressure in a range of about 0.02 torr to about 5.00 torr, a bias power in a range from about 1 W to about 100 W, and a plasma power in range from about 10 W to about 4000 W. Original
The method of claim 21, wherein the growing graphene on the plasma-treated surface of the substrate includes: injecting a reaction gas including a carbon source into a reaction chamber; and generating a plasma in the reaction chamber from the reaction gas while the substrate including the plasma-treated surface is in the reaction chamber. Original
Materials described outside the worked examples.
graphene
pretreatment gas
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 9 is a view illustrating Raman spectra measured from surfaces of silicon substrates after graphene was grown on the surfaces of the silicon substrates …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
— | 1–100 W | — |
— | 10–4000 W |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,094,538Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 to 8 are views illustrating a method of forming graphene according to an example embodiment; [0029]
FIG. 2, in a state in which the bias is applied to the substrate 11 0, power for generating plasma is applied to the inside of the reaction chamber from a …
FIG. 3, when plasma power is applied to the inside of the reaction chamber in a state in which a bias is applied to the substrate 110, gas plasma (for example, …
FIG. 4A illustrates roughness as an example of the activation sites 132. [0050] When gas plasma is generated by applying plasma power in a state in which a …
FIG. 5 illustrates an example in which the reaction gas includes a carbon source, an inert gas, and hydrogen gas, wherein acetylene gas and argon gas are …
FIG. 6, power for generating plasma inside the reaction chamber is applied from a plasma power supply (not shown). The plasma power applied in the graphene …
FIG. 7) may be formed on the surface 110 a of the substrate 110 through the above-described substrate pretreatment process. Owing to the charges 131 or the …
FIG. 8, as described above, as the activated carbon 140 is continuously adsorbed on the surface 110a of the substrate 110, graphene 150 may be grown and formed …
FIG. 9 is a view illustrating Raman spectra measured from surfaces of silicon substrates after graphene was grown on the surfaces of the silicon substrates …
FIG. 10 is a view illustrating the amounts of Si-C bonds formed on surfaces of silicon substrates after graphene was grown on the surfaces of the silicon …
FIGS. 11 to 12 are views illustrating a method of forming graphene according to another example embodiment; and [0032]
FIG. 12) is injected into a reaction chamber. Here, the reaction gas may include a carbon source. For example, the carbon source may include at least one of …
FIG. 13 is a cross-sectional view of an apparatus for forming graphene according to some example embodiments.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of forming graphene, the method comprising: treating a surface of a substrate placed in a reaction chamber with plasma while applying a bias to the substrate; and growing graphene on the surface of the substrate by plasma enhanced chemical vapor deposition (PECVD),herecn l'th;g_!!aEst ace 0 ofthe su bstrate includes Tgri ing ~g ck ast one_ ot Currently amended
The method of claim 1, wherein the activation sites includes at least one of roughness and defects. Currently amended
The method of claim 1, wherein the treating the surface of the substrate includes: injecting a pretreatment gas into the reaction chamber; applying the bias to the substrate; and generating the plasma in the reaction chamber while applying the bias to the substrate. Original
The method of claim 1, wherein the growing of the graphene includes: injecting a reaction gas including a carbon source into the reaction chamber; and directly growing the graphene on the surface of the substrate by generating plasma in the reaction chamber. Original
The method of claim 1, wherein the substrate includes at least one of a group IV semiconductor material, a semiconductor compound, a metal, and an insulating material. Original
Canceled
A method of forming graphene, the method comprising: treating a surface of a substrate by applying a bias to the substrate; and growing graphene on the surface of the substrate,w..e.ei.:;,. `;;.: includes Currently amended
The method of claim 18, wherein the treating the surface of the substrate includes: injecting a pretreatment gas into a reaction chamber; applying the bias to the substrate; and generating plasma in the reaction chamber while applying the bias to the substrate. Original
The method of claim 18, wherein the growing the graphene includes: injecting a reaction gas including a carbon source into a reaction chamber; and directly growing the graphene on the surface of the substrate by generating plasma in the reaction chamber. Original
A method of forming graphene, the method comprising: preparing a substrate including a plasma-treated surface, the preparing the substrate including performing a plasma operation on the substrate while applying a bias to the substrate, growing graphene on the plasma-treated surface of the substrate by plasma enhanced chemical vapor deposition (PECVD), w:1 he_ plasma-treated Osrf tflt_ su;strate includes at one cf _.av~g & ac;Se.t ri cve C₂ n tfl thf plasma-treated surface Currently amended
The method of claim 21, wherein the preparing the substrate includes: placing the substrate including the plasma-treated surface in a reaction chamber, injecting a pretreatment gas into the reaction chamber; applying the bias to the substrate; and generating a plasma in the reaction chamber while applying the bias to the substrate in the reaction chamber. Original
The method of claim 21, wherein the preparing the substrate is performed at a processing temperature of about 1000 o C or less, a processing pressure in a range of about 0.02 torr to about 5.00 torr, a bias power in a range from about 1 W to about 100 W, and a plasma power in range from about 10 W to about 4000 W. Original
The method of claim 21, wherein the growing graphene on the plasma-treated surface of the substrate includes: injecting a reaction gas including a carbon source into a reaction chamber; and generating a plasma in the reaction chamber from the reaction gas while the substrate including the plasma-treated surface is in the reaction chamber. Original
Materials described outside the worked examples.
graphene
pretreatment gas
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 9 is a view illustrating Raman spectra measured from surfaces of silicon substrates after graphene was grown on the surfaces of the silicon substrates …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
— | 1–100 W | — |
— | 10–4000 W |
Related documents with shared materials, methods, properties, or citations.
carbon source reaction gas
substrate
silicon
Si
germanium
Ge
copper
Cu
| — |
Pressure | 0.02–5 torr | — |
carbon source reaction gas
substrate
silicon
Si
germanium
Ge
copper
Cu
| — |
Pressure | 0.02–5 torr | — |
carbon source reaction gas
substrate
silicon
Si
germanium
Ge
copper
Cu
| — |
Pressure | 0.02–5 torr | — |
carbon source reaction gas
substrate
silicon
Si
germanium
Ge
copper
Cu
| — |
Pressure | 0.02–5 torr | — |