Patent
US 9,150,418METHOD AND SYSTEM FOR GRAPHENE FORMATION
David A. Boyd
California Institute of Technology·US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,150,418Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a simplified schematic diagram illustrating a system for graphene production according to an embodiment of the present invention. The system includes …
FIG. 2 is a simplified flowchart illustrating a method of growing graphene according to an embodiment of the present invention. The method includes placing a …
FIG. 3 shows data (i.e., spectral data collected using Raman spectroscopy) for a graphene film 30 grown using conventional techniques (plot A) and for a …
FIG. 4. Accordingly, description related to the method illustrated in
FIG. 5, the graphene grown at room temperature (i.e., 24 ° C and 8000 ° C have similar Raman spectra to graphene grown by thermal C V D at 1,000 C. The two …
FIG. 6. Both films were grown on single crystal copper. The two features of the Raman spectra at ~ 1580 and 2700 cm⁻¹ and the absence of a pronounced defect …
FIG. 7, plot A illustrates the Raman spectra for a conventional growth process performed at 1,000 °C. 30 Plot B illustrates the Raman spectra for the single …
FIG. 8. One of ordinary skill in the art would recognize many variations, modifications, and alternatives. [0064] It is also understood that the examples and …
FIG. 10 8, the roll-to-roll process can be used for continuous production of large area graphene films. A reduced pressure atmosphere is provided at least in …
FIG. 25 5, the Raman spectra for graphene grown using conventional techniques (i.e., single crystal copper substrate with growth performed at 1,000 ° C is …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of forming a film of graphene, the method comprising: placing a substrate on a holder in a processing chamber at a reduced pressure, wherein the processing chamber includes at least one atmospheric gas consisting of nitrogen, oxygen, or water vapor; performing a room temperature surface treatment process on at least a portion of the substrate; providing a carbon containing material in the processing chamber; exposing the substrate to the carbon containing material; and converting, at room temperature, a portion of the carbon containing material to a film of graphene.
The method of claim 1 further comprising providing a gas and exposing the substrate to the gas prior to performing the room temperature surface treatment process.
The method of claim 1 wherein the room temperature surface treatment process comprises an RF plasma cleaning process.
The method of claim 1 where the substrate comprises a copper foil.
The method of claim 1 wherein the reduced pressure is between 25 m T orr and 500 m T orr.
The method of claim 1 wherein the carbon containing material comprises at least one of methane, ethane, propane, or butane.
The method of claim 1 wherein converting, at room temperature, [[a]] the portion of the carbon containing material to [[a]] the film of graphene includes subjecting the substrate to an RF plasma.
The method of claim 1 wherein converting, at room temperature, the portion of the carbon containing material to the film of graphene is performed concurrently with performing an etching the room temperature surface treatment process.
The method of claim 1 wherein the at least one atmospheric gas comprises nitrogen gas.
The method of claim 1 wherein the at least one atmospheric gas comprises water vapor or oxygen.
The method of claim 1 wherein the room temperature surface treatment process comprises an etch process removing material from the substrate.
The method of claim 1 wherein the room temperature surface treatment process [[and]] is performed prior to the converting, at room Page 4 of 11 App l. No. 13/774,188 PATENT Am dt. dated Response to Office Action of temperature, the portion of the carbon containing material to the film of graphene are room temperature processes.
The method of claim 1 wherein the carbon containing material makes up less than 0.6 % of a flow containing the at least one atmospheric gas and the carbon containing material.
The method of claim 1 wherein a ratio of a first Raman peak associated with defects to a second Raman peak associated with graphite is less than one.
The method of claim 1 wherein the substrate has a front side opposite a backside and the backside is adjacent to the holder, wherein the film of graphene is formed on the backside of the substrate.
A method for forming graphene, the method comprising: providing a substrate; subjecting the substrate to a reduced pressure environment including at least one atmospheric gas other than argon; providing a carrier gas; providing a carbon source; exposing at least a portion of the substrate to the carrier gas including the at least one atmospheric gas and the carbon source; performing an etching process on the at least a portion of the substrate; and converting, concurrently with the performing the etching process and at room temperature, a portion of the carbon source to graphene, wherein graphene is disposed on the at least a portion of the substrate.
The method of claim 9 wherein the substrate comprises a copper foil and the etching process comprises removal of copper from the copper foil.
The method of claim 9 wherein the reduced pressure environment comprises a vacuum environment between 25 mTorr and 0.5 Torr.
The method of claim 9 wherein the carrier gas comprises hydrogen.
The method of claim 9 wherein the carbon source comprises methane.
The method of claim 9 wherein providing the carrier gas and providing the carbon source are performed concurrently.
The method of claim 9 wherein the etching process is performed at a pressure less than or equal to 500 m T orr.
The method of claim 9 wherein the at least one atmospheric gas comprises nitrogen gas.
The method of claim 9 wherein the at least one atmospheric gas comprises water vapor or oxygen.
The method of claim 9 wherein a ratio of a first Raman peak associated with defects to a second Raman peak associated with graphite is less than one.
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Materials described outside the worked examples.
graphene
C
carbon containing material
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3 shows data (i.e., spectral data collected using Raman spectroscopy) for a graphene film 30 grown using conventional techniques (plot A) and for a …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
D/G Raman peak ratio (defect to graphite peak ratio) | — | C |
Pressure | 25–40 mTorr |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,150,418Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a simplified schematic diagram illustrating a system for graphene production according to an embodiment of the present invention. The system includes …
FIG. 2 is a simplified flowchart illustrating a method of growing graphene according to an embodiment of the present invention. The method includes placing a …
FIG. 3 shows data (i.e., spectral data collected using Raman spectroscopy) for a graphene film 30 grown using conventional techniques (plot A) and for a …
FIG. 4. Accordingly, description related to the method illustrated in
FIG. 5, the graphene grown at room temperature (i.e., 24 ° C and 8000 ° C have similar Raman spectra to graphene grown by thermal C V D at 1,000 C. The two …
FIG. 6. Both films were grown on single crystal copper. The two features of the Raman spectra at ~ 1580 and 2700 cm⁻¹ and the absence of a pronounced defect …
FIG. 7, plot A illustrates the Raman spectra for a conventional growth process performed at 1,000 °C. 30 Plot B illustrates the Raman spectra for the single …
FIG. 8. One of ordinary skill in the art would recognize many variations, modifications, and alternatives. [0064] It is also understood that the examples and …
FIG. 10 8, the roll-to-roll process can be used for continuous production of large area graphene films. A reduced pressure atmosphere is provided at least in …
FIG. 25 5, the Raman spectra for graphene grown using conventional techniques (i.e., single crystal copper substrate with growth performed at 1,000 ° C is …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of forming a film of graphene, the method comprising: placing a substrate on a holder in a processing chamber at a reduced pressure, wherein the processing chamber includes at least one atmospheric gas consisting of nitrogen, oxygen, or water vapor; performing a room temperature surface treatment process on at least a portion of the substrate; providing a carbon containing material in the processing chamber; exposing the substrate to the carbon containing material; and converting, at room temperature, a portion of the carbon containing material to a film of graphene.
The method of claim 1 further comprising providing a gas and exposing the substrate to the gas prior to performing the room temperature surface treatment process.
The method of claim 1 wherein the room temperature surface treatment process comprises an RF plasma cleaning process.
The method of claim 1 where the substrate comprises a copper foil.
The method of claim 1 wherein the reduced pressure is between 25 m T orr and 500 m T orr.
The method of claim 1 wherein the carbon containing material comprises at least one of methane, ethane, propane, or butane.
The method of claim 1 wherein converting, at room temperature, [[a]] the portion of the carbon containing material to [[a]] the film of graphene includes subjecting the substrate to an RF plasma.
The method of claim 1 wherein converting, at room temperature, the portion of the carbon containing material to the film of graphene is performed concurrently with performing an etching the room temperature surface treatment process.
The method of claim 1 wherein the at least one atmospheric gas comprises nitrogen gas.
The method of claim 1 wherein the at least one atmospheric gas comprises water vapor or oxygen.
The method of claim 1 wherein the room temperature surface treatment process comprises an etch process removing material from the substrate.
The method of claim 1 wherein the room temperature surface treatment process [[and]] is performed prior to the converting, at room Page 4 of 11 App l. No. 13/774,188 PATENT Am dt. dated Response to Office Action of temperature, the portion of the carbon containing material to the film of graphene are room temperature processes.
The method of claim 1 wherein the carbon containing material makes up less than 0.6 % of a flow containing the at least one atmospheric gas and the carbon containing material.
The method of claim 1 wherein a ratio of a first Raman peak associated with defects to a second Raman peak associated with graphite is less than one.
The method of claim 1 wherein the substrate has a front side opposite a backside and the backside is adjacent to the holder, wherein the film of graphene is formed on the backside of the substrate.
A method for forming graphene, the method comprising: providing a substrate; subjecting the substrate to a reduced pressure environment including at least one atmospheric gas other than argon; providing a carrier gas; providing a carbon source; exposing at least a portion of the substrate to the carrier gas including the at least one atmospheric gas and the carbon source; performing an etching process on the at least a portion of the substrate; and converting, concurrently with the performing the etching process and at room temperature, a portion of the carbon source to graphene, wherein graphene is disposed on the at least a portion of the substrate.
The method of claim 9 wherein the substrate comprises a copper foil and the etching process comprises removal of copper from the copper foil.
The method of claim 9 wherein the reduced pressure environment comprises a vacuum environment between 25 mTorr and 0.5 Torr.
The method of claim 9 wherein the carrier gas comprises hydrogen.
The method of claim 9 wherein the carbon source comprises methane.
The method of claim 9 wherein providing the carrier gas and providing the carbon source are performed concurrently.
The method of claim 9 wherein the etching process is performed at a pressure less than or equal to 500 m T orr.
The method of claim 9 wherein the at least one atmospheric gas comprises nitrogen gas.
The method of claim 9 wherein the at least one atmospheric gas comprises water vapor or oxygen.
The method of claim 9 wherein a ratio of a first Raman peak associated with defects to a second Raman peak associated with graphite is less than one.
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canceled
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Materials described outside the worked examples.
graphene
C
carbon containing material
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3 shows data (i.e., spectral data collected using Raman spectroscopy) for a graphene film 30 grown using conventional techniques (plot A) and for a …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
D/G Raman peak ratio (defect to graphite peak ratio) | — | C |
Pressure | 25–40 mTorr |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,150,418Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a simplified schematic diagram illustrating a system for graphene production according to an embodiment of the present invention. The system includes …
FIG. 2 is a simplified flowchart illustrating a method of growing graphene according to an embodiment of the present invention. The method includes placing a …
FIG. 3 shows data (i.e., spectral data collected using Raman spectroscopy) for a graphene film 30 grown using conventional techniques (plot A) and for a …
FIG. 4. Accordingly, description related to the method illustrated in
FIG. 5, the graphene grown at room temperature (i.e., 24 ° C and 8000 ° C have similar Raman spectra to graphene grown by thermal C V D at 1,000 C. The two …
FIG. 6. Both films were grown on single crystal copper. The two features of the Raman spectra at ~ 1580 and 2700 cm⁻¹ and the absence of a pronounced defect …
FIG. 7, plot A illustrates the Raman spectra for a conventional growth process performed at 1,000 °C. 30 Plot B illustrates the Raman spectra for the single …
FIG. 8. One of ordinary skill in the art would recognize many variations, modifications, and alternatives. [0064] It is also understood that the examples and …
FIG. 10 8, the roll-to-roll process can be used for continuous production of large area graphene films. A reduced pressure atmosphere is provided at least in …
FIG. 25 5, the Raman spectra for graphene grown using conventional techniques (i.e., single crystal copper substrate with growth performed at 1,000 ° C is …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of forming a film of graphene, the method comprising: placing a substrate on a holder in a processing chamber at a reduced pressure, wherein the processing chamber includes at least one atmospheric gas consisting of nitrogen, oxygen, or water vapor; performing a room temperature surface treatment process on at least a portion of the substrate; providing a carbon containing material in the processing chamber; exposing the substrate to the carbon containing material; and converting, at room temperature, a portion of the carbon containing material to a film of graphene.
The method of claim 1 further comprising providing a gas and exposing the substrate to the gas prior to performing the room temperature surface treatment process.
The method of claim 1 wherein the room temperature surface treatment process comprises an RF plasma cleaning process.
The method of claim 1 where the substrate comprises a copper foil.
The method of claim 1 wherein the reduced pressure is between 25 m T orr and 500 m T orr.
The method of claim 1 wherein the carbon containing material comprises at least one of methane, ethane, propane, or butane.
The method of claim 1 wherein converting, at room temperature, [[a]] the portion of the carbon containing material to [[a]] the film of graphene includes subjecting the substrate to an RF plasma.
The method of claim 1 wherein converting, at room temperature, the portion of the carbon containing material to the film of graphene is performed concurrently with performing an etching the room temperature surface treatment process.
The method of claim 1 wherein the at least one atmospheric gas comprises nitrogen gas.
The method of claim 1 wherein the at least one atmospheric gas comprises water vapor or oxygen.
The method of claim 1 wherein the room temperature surface treatment process comprises an etch process removing material from the substrate.
The method of claim 1 wherein the room temperature surface treatment process [[and]] is performed prior to the converting, at room Page 4 of 11 App l. No. 13/774,188 PATENT Am dt. dated Response to Office Action of temperature, the portion of the carbon containing material to the film of graphene are room temperature processes.
The method of claim 1 wherein the carbon containing material makes up less than 0.6 % of a flow containing the at least one atmospheric gas and the carbon containing material.
The method of claim 1 wherein a ratio of a first Raman peak associated with defects to a second Raman peak associated with graphite is less than one.
The method of claim 1 wherein the substrate has a front side opposite a backside and the backside is adjacent to the holder, wherein the film of graphene is formed on the backside of the substrate.
A method for forming graphene, the method comprising: providing a substrate; subjecting the substrate to a reduced pressure environment including at least one atmospheric gas other than argon; providing a carrier gas; providing a carbon source; exposing at least a portion of the substrate to the carrier gas including the at least one atmospheric gas and the carbon source; performing an etching process on the at least a portion of the substrate; and converting, concurrently with the performing the etching process and at room temperature, a portion of the carbon source to graphene, wherein graphene is disposed on the at least a portion of the substrate.
The method of claim 9 wherein the substrate comprises a copper foil and the etching process comprises removal of copper from the copper foil.
The method of claim 9 wherein the reduced pressure environment comprises a vacuum environment between 25 mTorr and 0.5 Torr.
The method of claim 9 wherein the carrier gas comprises hydrogen.
The method of claim 9 wherein the carbon source comprises methane.
The method of claim 9 wherein providing the carrier gas and providing the carbon source are performed concurrently.
The method of claim 9 wherein the etching process is performed at a pressure less than or equal to 500 m T orr.
The method of claim 9 wherein the at least one atmospheric gas comprises nitrogen gas.
The method of claim 9 wherein the at least one atmospheric gas comprises water vapor or oxygen.
The method of claim 9 wherein a ratio of a first Raman peak associated with defects to a second Raman peak associated with graphite is less than one.
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canceled
canceled
canceled
canceled
. canceled
. canceled
- 37.. canceled
canceled
. canceled
Materials described outside the worked examples.
graphene
C
carbon containing material
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3 shows data (i.e., spectral data collected using Raman spectroscopy) for a graphene film 30 grown using conventional techniques (plot A) and for a …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
D/G Raman peak ratio (defect to graphite peak ratio) | — | C |
Pressure | 25–40 mTorr |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,150,418Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a simplified schematic diagram illustrating a system for graphene production according to an embodiment of the present invention. The system includes …
FIG. 2 is a simplified flowchart illustrating a method of growing graphene according to an embodiment of the present invention. The method includes placing a …
FIG. 3 shows data (i.e., spectral data collected using Raman spectroscopy) for a graphene film 30 grown using conventional techniques (plot A) and for a …
FIG. 4. Accordingly, description related to the method illustrated in
FIG. 5, the graphene grown at room temperature (i.e., 24 ° C and 8000 ° C have similar Raman spectra to graphene grown by thermal C V D at 1,000 C. The two …
FIG. 6. Both films were grown on single crystal copper. The two features of the Raman spectra at ~ 1580 and 2700 cm⁻¹ and the absence of a pronounced defect …
FIG. 7, plot A illustrates the Raman spectra for a conventional growth process performed at 1,000 °C. 30 Plot B illustrates the Raman spectra for the single …
FIG. 8. One of ordinary skill in the art would recognize many variations, modifications, and alternatives. [0064] It is also understood that the examples and …
FIG. 10 8, the roll-to-roll process can be used for continuous production of large area graphene films. A reduced pressure atmosphere is provided at least in …
FIG. 25 5, the Raman spectra for graphene grown using conventional techniques (i.e., single crystal copper substrate with growth performed at 1,000 ° C is …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of forming a film of graphene, the method comprising: placing a substrate on a holder in a processing chamber at a reduced pressure, wherein the processing chamber includes at least one atmospheric gas consisting of nitrogen, oxygen, or water vapor; performing a room temperature surface treatment process on at least a portion of the substrate; providing a carbon containing material in the processing chamber; exposing the substrate to the carbon containing material; and converting, at room temperature, a portion of the carbon containing material to a film of graphene.
The method of claim 1 further comprising providing a gas and exposing the substrate to the gas prior to performing the room temperature surface treatment process.
The method of claim 1 wherein the room temperature surface treatment process comprises an RF plasma cleaning process.
The method of claim 1 where the substrate comprises a copper foil.
The method of claim 1 wherein the reduced pressure is between 25 m T orr and 500 m T orr.
The method of claim 1 wherein the carbon containing material comprises at least one of methane, ethane, propane, or butane.
The method of claim 1 wherein converting, at room temperature, [[a]] the portion of the carbon containing material to [[a]] the film of graphene includes subjecting the substrate to an RF plasma.
The method of claim 1 wherein converting, at room temperature, the portion of the carbon containing material to the film of graphene is performed concurrently with performing an etching the room temperature surface treatment process.
The method of claim 1 wherein the at least one atmospheric gas comprises nitrogen gas.
The method of claim 1 wherein the at least one atmospheric gas comprises water vapor or oxygen.
The method of claim 1 wherein the room temperature surface treatment process comprises an etch process removing material from the substrate.
The method of claim 1 wherein the room temperature surface treatment process [[and]] is performed prior to the converting, at room Page 4 of 11 App l. No. 13/774,188 PATENT Am dt. dated Response to Office Action of temperature, the portion of the carbon containing material to the film of graphene are room temperature processes.
The method of claim 1 wherein the carbon containing material makes up less than 0.6 % of a flow containing the at least one atmospheric gas and the carbon containing material.
The method of claim 1 wherein a ratio of a first Raman peak associated with defects to a second Raman peak associated with graphite is less than one.
The method of claim 1 wherein the substrate has a front side opposite a backside and the backside is adjacent to the holder, wherein the film of graphene is formed on the backside of the substrate.
A method for forming graphene, the method comprising: providing a substrate; subjecting the substrate to a reduced pressure environment including at least one atmospheric gas other than argon; providing a carrier gas; providing a carbon source; exposing at least a portion of the substrate to the carrier gas including the at least one atmospheric gas and the carbon source; performing an etching process on the at least a portion of the substrate; and converting, concurrently with the performing the etching process and at room temperature, a portion of the carbon source to graphene, wherein graphene is disposed on the at least a portion of the substrate.
The method of claim 9 wherein the substrate comprises a copper foil and the etching process comprises removal of copper from the copper foil.
The method of claim 9 wherein the reduced pressure environment comprises a vacuum environment between 25 mTorr and 0.5 Torr.
The method of claim 9 wherein the carrier gas comprises hydrogen.
The method of claim 9 wherein the carbon source comprises methane.
The method of claim 9 wherein providing the carrier gas and providing the carbon source are performed concurrently.
The method of claim 9 wherein the etching process is performed at a pressure less than or equal to 500 m T orr.
The method of claim 9 wherein the at least one atmospheric gas comprises nitrogen gas.
The method of claim 9 wherein the at least one atmospheric gas comprises water vapor or oxygen.
The method of claim 9 wherein a ratio of a first Raman peak associated with defects to a second Raman peak associated with graphite is less than one.
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canceled
canceled
canceled
. canceled
. canceled
- 37.. canceled
canceled
. canceled
Materials described outside the worked examples.
graphene
C
carbon containing material
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3 shows data (i.e., spectral data collected using Raman spectroscopy) for a graphene film 30 grown using conventional techniques (plot A) and for a …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
D/G Raman peak ratio (defect to graphite peak ratio) | — | C |
Pressure | 25–40 mTorr |
Related documents with shared materials, methods, properties, or citations.
hydrogen
H₂
copper foil
Cu
hydrocarbon carbon source (methane, ethane, propane, or butane)
methane
CH₄
nitrogen gas
N₂
water vapor or oxygen
FIG. 4. Accordingly, description related to the method illustrated in
FIG. 5, the graphene grown at room temperature (i.e., 24 ° C and 8000 ° C have similar Raman spectra to graphene grown by thermal C V D at 1,000 C. The two …
FIG. 6. Both films were grown on single crystal copper. The two features of the Raman spectra at ~ 1580 and 2700 cm⁻¹ and the absence of a pronounced defect …
FIG. 7, plot A illustrates the Raman spectra for a conventional growth process performed at 1,000 °C. 30 Plot B illustrates the Raman spectra for the single …
FIG. 25 5, the Raman spectra for graphene grown using conventional techniques (i.e., single crystal copper substrate with growth performed at 1,000 ° C is …
| — |
Temperature | 20–30 °C | — |
Pressure | 0.025–0.5 Torr | — |
Temperature | 800–1000 °C | — |
Pressure | ≤ 500 mTorr | — |
Duration | 900–18000 s | — |
hydrogen
H₂
copper foil
Cu
hydrocarbon carbon source (methane, ethane, propane, or butane)
methane
CH₄
nitrogen gas
N₂
water vapor or oxygen
FIG. 4. Accordingly, description related to the method illustrated in
FIG. 5, the graphene grown at room temperature (i.e., 24 ° C and 8000 ° C have similar Raman spectra to graphene grown by thermal C V D at 1,000 C. The two …
FIG. 6. Both films were grown on single crystal copper. The two features of the Raman spectra at ~ 1580 and 2700 cm⁻¹ and the absence of a pronounced defect …
FIG. 7, plot A illustrates the Raman spectra for a conventional growth process performed at 1,000 °C. 30 Plot B illustrates the Raman spectra for the single …
FIG. 25 5, the Raman spectra for graphene grown using conventional techniques (i.e., single crystal copper substrate with growth performed at 1,000 ° C is …
| — |
Temperature | 20–30 °C | — |
Pressure | 0.025–0.5 Torr | — |
Temperature | 800–1000 °C | — |
Pressure | ≤ 500 mTorr | — |
Duration | 900–18000 s | — |
hydrogen
H₂
copper foil
Cu
hydrocarbon carbon source (methane, ethane, propane, or butane)
methane
CH₄
nitrogen gas
N₂
water vapor or oxygen
FIG. 4. Accordingly, description related to the method illustrated in
FIG. 5, the graphene grown at room temperature (i.e., 24 ° C and 8000 ° C have similar Raman spectra to graphene grown by thermal C V D at 1,000 C. The two …
FIG. 6. Both films were grown on single crystal copper. The two features of the Raman spectra at ~ 1580 and 2700 cm⁻¹ and the absence of a pronounced defect …
FIG. 7, plot A illustrates the Raman spectra for a conventional growth process performed at 1,000 °C. 30 Plot B illustrates the Raman spectra for the single …
FIG. 25 5, the Raman spectra for graphene grown using conventional techniques (i.e., single crystal copper substrate with growth performed at 1,000 ° C is …
| — |
Temperature | 20–30 °C | — |
Pressure | 0.025–0.5 Torr | — |
Temperature | 800–1000 °C | — |
Pressure | ≤ 500 mTorr | — |
Duration | 900–18000 s | — |
hydrogen
H₂
copper foil
Cu
hydrocarbon carbon source (methane, ethane, propane, or butane)
methane
CH₄
nitrogen gas
N₂
water vapor or oxygen
FIG. 4. Accordingly, description related to the method illustrated in
FIG. 5, the graphene grown at room temperature (i.e., 24 ° C and 8000 ° C have similar Raman spectra to graphene grown by thermal C V D at 1,000 C. The two …
FIG. 6. Both films were grown on single crystal copper. The two features of the Raman spectra at ~ 1580 and 2700 cm⁻¹ and the absence of a pronounced defect …
FIG. 7, plot A illustrates the Raman spectra for a conventional growth process performed at 1,000 °C. 30 Plot B illustrates the Raman spectra for the single …
FIG. 25 5, the Raman spectra for graphene grown using conventional techniques (i.e., single crystal copper substrate with growth performed at 1,000 ° C is …
| — |
Temperature | 20–30 °C | — |
Pressure | 0.025–0.5 Torr | — |
Temperature | 800–1000 °C | — |
Pressure | ≤ 500 mTorr | — |
Duration | 900–18000 s | — |