Micro-Raman spectroscopy of graphene defects and tracing the oxidation process caused by UV exposure

Paper details

Research paper

Experimental Characterization

Somayeh Gholipour, Maryam Bahreini, Mohamad Reza Jafarfard

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

3 characterizations10 properties3 figures

ExperimentalCStudied MaterialSiO₂Substrate / Dielectric

1 characterization4 properties1 figure

ExperimentalCStudied MaterialSiO₂Substrate / Dielectric

graphene

Studied Material

Also known as

single-layer graphenebi-layer graphenemonolayer graphene

studied material

Related documents with shared materials, methods, properties, or citations.

Micro-Raman spectroscopy of graphene defects and tracing the oxidation process caused by UV exposure | Matter42 Literature

Type	Label	Value	Material	Sample	Source
Raman Peak	G	1584cm⁻¹	C	Single-layer graphene on 300 nm silicon oxide substrate.	—
Raman Peak	2D	2684cm⁻¹	C	Single-layer graphene on 300 nm silicon oxide substrate.	—
Raman Intensity Ratio	I(2D)/I(G)	3.4	C	Single-layer graphene on 300 nm silicon oxide substrate.	—
Raman Peak Fwhm	2D	38cm⁻¹	C	Single-layer graphene on 300 nm silicon oxide substrate.	—
Raman Peak	G	1588cm⁻¹	C	Bi-layer graphene on 300 nm silicon oxide substrate.	—
Raman Peak	2D	2708cm⁻¹	C	Bi-layer graphene on 300 nm silicon oxide substrate.	—
Raman Intensity Ratio	I(2D)/I(G)	0.92	C	Bi-layer graphene on 300 nm silicon oxide substrate.	—
Raman Peak Fwhm	2D	62cm⁻¹	C	Bi-layer graphene on 300 nm silicon oxide substrate.	—
Raman Peak	D	1350cm⁻¹	C	Single-layer graphene on 300 nm silicon oxide substrate.	—
Raman Peak Fwhm	G	45.5cm⁻¹	C	Single-layer graphene on 300 nm silicon oxide substrate.	—
Raman Intensity Ratio	I(2D)/I(G)	1.39	C	Single-layer graphene on 300 nm silicon oxide substrate.	—
Raman Intensity Ratio	I(D)/I(G)	0	C	Single-layer graphene on 300 nm silicon oxide substrate.	—
Raman Intensity Ratio	I(2D)/I(G)	3.2	C	Single-layer graphene on 300 nm silicon oxide substrate.	—
Raman Intensity Ratio	I(2D)/I(G)	2.6	C	Single-layer graphene on 300 nm silicon oxide substrate.	—

Type	Label	Value	Material	Sample	Source
Raman Peak	G	1584cm⁻¹	C	Single-layer graphene on 300 nm silicon oxide substrate.	—
Raman Peak	2D	2684cm⁻¹	C	Single-layer graphene on 300 nm silicon oxide substrate.	—
Raman Intensity Ratio	I(2D)/I(G)	3.4	C	Single-layer graphene on 300 nm silicon oxide substrate.	—
Raman Peak Fwhm	2D	38cm⁻¹	C	Single-layer graphene on 300 nm silicon oxide substrate.	—
Raman Peak	G	1588cm⁻¹	C	Bi-layer graphene on 300 nm silicon oxide substrate.	—
Raman Peak	2D	2708cm⁻¹	C	Bi-layer graphene on 300 nm silicon oxide substrate.	—
Raman Intensity Ratio	I(2D)/I(G)	0.92	C	Bi-layer graphene on 300 nm silicon oxide substrate.	—
Raman Peak Fwhm	2D	62cm⁻¹	C	Bi-layer graphene on 300 nm silicon oxide substrate.	—
Raman Peak	D	1350cm⁻¹	C	Single-layer graphene on 300 nm silicon oxide substrate.	—
Raman Peak Fwhm	G	45.5cm⁻¹	C	Single-layer graphene on 300 nm silicon oxide substrate.	—
Raman Intensity Ratio	I(2D)/I(G)	1.39	C	Single-layer graphene on 300 nm silicon oxide substrate.	—
Raman Intensity Ratio	I(D)/I(G)	0	C	Single-layer graphene on 300 nm silicon oxide substrate.	—
Raman Intensity Ratio	I(2D)/I(G)	3.2	C	Single-layer graphene on 300 nm silicon oxide substrate.	—
Raman Intensity Ratio	I(2D)/I(G)	2.6	C	Single-layer graphene on 300 nm silicon oxide substrate.	—

Type	Label	Value	Material	Sample	Source
Raman Peak	G	1584cm⁻¹	C	Single-layer graphene on 300 nm silicon oxide substrate.	—
Raman Peak	2D	2684cm⁻¹	C	Single-layer graphene on 300 nm silicon oxide substrate.	—
Raman Intensity Ratio	I(2D)/I(G)	3.4	C	Single-layer graphene on 300 nm silicon oxide substrate.	—
Raman Peak Fwhm	2D	38cm⁻¹	C	Single-layer graphene on 300 nm silicon oxide substrate.	—
Raman Peak	G	1588cm⁻¹	C	Bi-layer graphene on 300 nm silicon oxide substrate.	—
Raman Peak	2D	2708cm⁻¹	C	Bi-layer graphene on 300 nm silicon oxide substrate.	—
Raman Intensity Ratio	I(2D)/I(G)	0.92	C	Bi-layer graphene on 300 nm silicon oxide substrate.	—
Raman Peak Fwhm	2D	62cm⁻¹	C	Bi-layer graphene on 300 nm silicon oxide substrate.	—
Raman Peak	D	1350cm⁻¹	C	Single-layer graphene on 300 nm silicon oxide substrate.	—
Raman Peak Fwhm	G	45.5cm⁻¹	C	Single-layer graphene on 300 nm silicon oxide substrate.	—
Raman Intensity Ratio	I(2D)/I(G)	1.39	C	Single-layer graphene on 300 nm silicon oxide substrate.	—
Raman Intensity Ratio	I(D)/I(G)	0	C	Single-layer graphene on 300 nm silicon oxide substrate.	—
Raman Intensity Ratio	I(2D)/I(G)	3.2	C	Single-layer graphene on 300 nm silicon oxide substrate.	—
Raman Intensity Ratio	I(2D)/I(G)	2.6	C	Single-layer graphene on 300 nm silicon oxide substrate.	—

Type	Label	Value	Material	Sample	Source
Raman Peak	G	1584cm⁻¹	C	Single-layer graphene on 300 nm silicon oxide substrate.	—
Raman Peak	2D	2684cm⁻¹	C	Single-layer graphene on 300 nm silicon oxide substrate.	—
Raman Intensity Ratio	I(2D)/I(G)	3.4	C	Single-layer graphene on 300 nm silicon oxide substrate.	—
Raman Peak Fwhm	2D	38cm⁻¹	C	Single-layer graphene on 300 nm silicon oxide substrate.	—
Raman Peak	G	1588cm⁻¹	C	Bi-layer graphene on 300 nm silicon oxide substrate.	—
Raman Peak	2D	2708cm⁻¹	C	Bi-layer graphene on 300 nm silicon oxide substrate.	—
Raman Intensity Ratio	I(2D)/I(G)	0.92	C	Bi-layer graphene on 300 nm silicon oxide substrate.	—
Raman Peak Fwhm	2D	62cm⁻¹	C	Bi-layer graphene on 300 nm silicon oxide substrate.	—
Raman Peak	D	1350cm⁻¹	C	Single-layer graphene on 300 nm silicon oxide substrate.	—
Raman Peak Fwhm	G	45.5cm⁻¹	C	Single-layer graphene on 300 nm silicon oxide substrate.	—
Raman Intensity Ratio	I(2D)/I(G)	1.39	C	Single-layer graphene on 300 nm silicon oxide substrate.	—
Raman Intensity Ratio	I(D)/I(G)	0	C	Single-layer graphene on 300 nm silicon oxide substrate.	—
Raman Intensity Ratio	I(2D)/I(G)	3.2	C	Single-layer graphene on 300 nm silicon oxide substrate.	—
Raman Intensity Ratio	I(2D)/I(G)	2.6	C	Single-layer graphene on 300 nm silicon oxide substrate.	—