Patent
US 10,508,036SYSTEM AND METHOD FOR MASS PRODUCTION OF GRAPHENE PLATELETS IN ARC PLASMA
Michael Keidar
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 10,508,036Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1. The anode material is consumed during the synthesis, i.e. the anode length decreases during the arc discharge, while the anode diameter remains …
FIG. 2. Thus, the substrate 56 rotates about the 10 heating block 54, which remains fixed 54. [0025] The substrate 56 is rigid with a preferable thickness in …
FIGS. 3a, 3b present SEM images of the copper foil substrate 56 with the graphene film grown on it after the ar c run. SEM observations indicate the presence of …
FIG. 130761.00841/105490835v. 1 Substitute Specification-Clean Version 1, which feeds the anode rod 12 as it is consumed by the discharge in order to keep the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1-17. Canceled
Canceled
A method for synthesizing graphene, the method comprising: providing a heated substrate; producing a flux stream of carbon using an anodic arc discharge device having an anodic arc, and depositing material from the flux stream on the heated substrate, wherein the flux stream comprises a carbon vapor and the material deposited on the substrate comprises graphene; and removing the deposited material from the substrate using a collection device, wherein the method is conducted at a pressure of up to 500 Torr and a temperature of the substrate of about 700-1,200 degrees Celsius, and configuring a rate of producing the carbon vapor flux stream, a rate of depositing the graphene material from the flux stream onto the substrate, and the substrate temperature to form a single graphene layer on the substrate. Previously presented
The method of claim 18, further comprising enclosing a heating element in a heating block, the heating element imparting heat to the heating block, and the heating block dispersing the heat from the heating element uniformly throughout the heating block to uniformly heat the substrate. Previously presented
The method of claim 18, wherein the collection device comprises a brush. Previously presented
The method of claim 18, wherein the flux stream is provided by an anode electrode and a cathode electrode. Previously presented
The method of claim 18, further comprising rotating the heated substrate, depositing the flux stream on the rotating substrate at a first side of the substrate, and simultaneously removing the deposited material from a second side of the rotating substrate with the collection device, wherein the first side is different from the second side, and whereby the deposited graphene material has a thickness of one atom. Previously presented
A method comprising: providing a substrate; embedding a heating element in a solid cylindrical cement heating block, the heating element imparting heat to the heating block, and the heating block dispersing the heat from the heating element uniformly throughout the heating block to uniformly heat the substrate to a temperature of 700-1,200 degrees Celsius; producing a carbon vapor flux stream by an anodic arc discharge device having an anodic arc, and depositing a graphene material from the flux stream onto the heated substrate at a pressure of up to 500 Torr; removing the deposited graphene material from the heated substrate using a collection device; and, configuring a rate of producing the carbon vapor flux stream, a rate of depositing the graphene material from the flux stream onto the substrate, and substrate temperature to form a single graphene layer on the substrate. Previously presented
The method of claim 30, wherein the substrate is a tube coaxially arranged about the cylindrical heating block. Previously presented
The method of claim 30, wherein the substrate has a cylindrical shape and the cylindrical heating block is concentrically arranged inside the cylindrical substrate whereby an inside diameter of the cylindrical substrate is greater than an outer diameter of the cylindrical heating block. Previously presented
The method of claim 30, wherein the collection device comprises a brush. Previously presented
The method of claim 30, further comprising rotating the substrate, wherein the carbon vapor flux stream is deposited on the rotating substrate at a first side of the rotating substrate simultaneously with the collection device removing the deposited graphene material from a second side of the rotating substrate, wherein the Previously presented
The method of claim 30, wherein the deposited atom. Previously presented
38-41. Canceled
Canceled first side is different from the second side. comprises a top portion of the substrate and substrate. Previously presented is cylindrical and has a longitudinal axis that graphene material has a thickness of one
Materials described outside the worked examples.
graphene
carbon vapor
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
SEM images of as-grown graphene film on copper foil and mechanically transferred to TEM grid (FIGS. 3(a)-(c))
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Pressure | 0.01 Torr | — |
Temperature | 700–1200 °C |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,508,036Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1. The anode material is consumed during the synthesis, i.e. the anode length decreases during the arc discharge, while the anode diameter remains …
FIG. 2. Thus, the substrate 56 rotates about the 10 heating block 54, which remains fixed 54. [0025] The substrate 56 is rigid with a preferable thickness in …
FIGS. 3a, 3b present SEM images of the copper foil substrate 56 with the graphene film grown on it after the ar c run. SEM observations indicate the presence of …
FIG. 130761.00841/105490835v. 1 Substitute Specification-Clean Version 1, which feeds the anode rod 12 as it is consumed by the discharge in order to keep the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1-17. Canceled
Canceled
A method for synthesizing graphene, the method comprising: providing a heated substrate; producing a flux stream of carbon using an anodic arc discharge device having an anodic arc, and depositing material from the flux stream on the heated substrate, wherein the flux stream comprises a carbon vapor and the material deposited on the substrate comprises graphene; and removing the deposited material from the substrate using a collection device, wherein the method is conducted at a pressure of up to 500 Torr and a temperature of the substrate of about 700-1,200 degrees Celsius, and configuring a rate of producing the carbon vapor flux stream, a rate of depositing the graphene material from the flux stream onto the substrate, and the substrate temperature to form a single graphene layer on the substrate. Previously presented
The method of claim 18, further comprising enclosing a heating element in a heating block, the heating element imparting heat to the heating block, and the heating block dispersing the heat from the heating element uniformly throughout the heating block to uniformly heat the substrate. Previously presented
The method of claim 18, wherein the collection device comprises a brush. Previously presented
The method of claim 18, wherein the flux stream is provided by an anode electrode and a cathode electrode. Previously presented
The method of claim 18, further comprising rotating the heated substrate, depositing the flux stream on the rotating substrate at a first side of the substrate, and simultaneously removing the deposited material from a second side of the rotating substrate with the collection device, wherein the first side is different from the second side, and whereby the deposited graphene material has a thickness of one atom. Previously presented
A method comprising: providing a substrate; embedding a heating element in a solid cylindrical cement heating block, the heating element imparting heat to the heating block, and the heating block dispersing the heat from the heating element uniformly throughout the heating block to uniformly heat the substrate to a temperature of 700-1,200 degrees Celsius; producing a carbon vapor flux stream by an anodic arc discharge device having an anodic arc, and depositing a graphene material from the flux stream onto the heated substrate at a pressure of up to 500 Torr; removing the deposited graphene material from the heated substrate using a collection device; and, configuring a rate of producing the carbon vapor flux stream, a rate of depositing the graphene material from the flux stream onto the substrate, and substrate temperature to form a single graphene layer on the substrate. Previously presented
The method of claim 30, wherein the substrate is a tube coaxially arranged about the cylindrical heating block. Previously presented
The method of claim 30, wherein the substrate has a cylindrical shape and the cylindrical heating block is concentrically arranged inside the cylindrical substrate whereby an inside diameter of the cylindrical substrate is greater than an outer diameter of the cylindrical heating block. Previously presented
The method of claim 30, wherein the collection device comprises a brush. Previously presented
The method of claim 30, further comprising rotating the substrate, wherein the carbon vapor flux stream is deposited on the rotating substrate at a first side of the rotating substrate simultaneously with the collection device removing the deposited graphene material from a second side of the rotating substrate, wherein the Previously presented
The method of claim 30, wherein the deposited atom. Previously presented
38-41. Canceled
Canceled first side is different from the second side. comprises a top portion of the substrate and substrate. Previously presented is cylindrical and has a longitudinal axis that graphene material has a thickness of one
Materials described outside the worked examples.
graphene
carbon vapor
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
SEM images of as-grown graphene film on copper foil and mechanically transferred to TEM grid (FIGS. 3(a)-(c))
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Pressure | 0.01 Torr | — |
Temperature | 700–1200 °C |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,508,036Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1. The anode material is consumed during the synthesis, i.e. the anode length decreases during the arc discharge, while the anode diameter remains …
FIG. 2. Thus, the substrate 56 rotates about the 10 heating block 54, which remains fixed 54. [0025] The substrate 56 is rigid with a preferable thickness in …
FIGS. 3a, 3b present SEM images of the copper foil substrate 56 with the graphene film grown on it after the ar c run. SEM observations indicate the presence of …
FIG. 130761.00841/105490835v. 1 Substitute Specification-Clean Version 1, which feeds the anode rod 12 as it is consumed by the discharge in order to keep the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1-17. Canceled
Canceled
A method for synthesizing graphene, the method comprising: providing a heated substrate; producing a flux stream of carbon using an anodic arc discharge device having an anodic arc, and depositing material from the flux stream on the heated substrate, wherein the flux stream comprises a carbon vapor and the material deposited on the substrate comprises graphene; and removing the deposited material from the substrate using a collection device, wherein the method is conducted at a pressure of up to 500 Torr and a temperature of the substrate of about 700-1,200 degrees Celsius, and configuring a rate of producing the carbon vapor flux stream, a rate of depositing the graphene material from the flux stream onto the substrate, and the substrate temperature to form a single graphene layer on the substrate. Previously presented
The method of claim 18, further comprising enclosing a heating element in a heating block, the heating element imparting heat to the heating block, and the heating block dispersing the heat from the heating element uniformly throughout the heating block to uniformly heat the substrate. Previously presented
The method of claim 18, wherein the collection device comprises a brush. Previously presented
The method of claim 18, wherein the flux stream is provided by an anode electrode and a cathode electrode. Previously presented
The method of claim 18, further comprising rotating the heated substrate, depositing the flux stream on the rotating substrate at a first side of the substrate, and simultaneously removing the deposited material from a second side of the rotating substrate with the collection device, wherein the first side is different from the second side, and whereby the deposited graphene material has a thickness of one atom. Previously presented
A method comprising: providing a substrate; embedding a heating element in a solid cylindrical cement heating block, the heating element imparting heat to the heating block, and the heating block dispersing the heat from the heating element uniformly throughout the heating block to uniformly heat the substrate to a temperature of 700-1,200 degrees Celsius; producing a carbon vapor flux stream by an anodic arc discharge device having an anodic arc, and depositing a graphene material from the flux stream onto the heated substrate at a pressure of up to 500 Torr; removing the deposited graphene material from the heated substrate using a collection device; and, configuring a rate of producing the carbon vapor flux stream, a rate of depositing the graphene material from the flux stream onto the substrate, and substrate temperature to form a single graphene layer on the substrate. Previously presented
The method of claim 30, wherein the substrate is a tube coaxially arranged about the cylindrical heating block. Previously presented
The method of claim 30, wherein the substrate has a cylindrical shape and the cylindrical heating block is concentrically arranged inside the cylindrical substrate whereby an inside diameter of the cylindrical substrate is greater than an outer diameter of the cylindrical heating block. Previously presented
The method of claim 30, wherein the collection device comprises a brush. Previously presented
The method of claim 30, further comprising rotating the substrate, wherein the carbon vapor flux stream is deposited on the rotating substrate at a first side of the rotating substrate simultaneously with the collection device removing the deposited graphene material from a second side of the rotating substrate, wherein the Previously presented
The method of claim 30, wherein the deposited atom. Previously presented
38-41. Canceled
Canceled first side is different from the second side. comprises a top portion of the substrate and substrate. Previously presented is cylindrical and has a longitudinal axis that graphene material has a thickness of one
Materials described outside the worked examples.
graphene
carbon vapor
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
SEM images of as-grown graphene film on copper foil and mechanically transferred to TEM grid (FIGS. 3(a)-(c))
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Pressure | 0.01 Torr | — |
Temperature | 700–1200 °C |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,508,036Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1. The anode material is consumed during the synthesis, i.e. the anode length decreases during the arc discharge, while the anode diameter remains …
FIG. 2. Thus, the substrate 56 rotates about the 10 heating block 54, which remains fixed 54. [0025] The substrate 56 is rigid with a preferable thickness in …
FIGS. 3a, 3b present SEM images of the copper foil substrate 56 with the graphene film grown on it after the ar c run. SEM observations indicate the presence of …
FIG. 130761.00841/105490835v. 1 Substitute Specification-Clean Version 1, which feeds the anode rod 12 as it is consumed by the discharge in order to keep the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1-17. Canceled
Canceled
A method for synthesizing graphene, the method comprising: providing a heated substrate; producing a flux stream of carbon using an anodic arc discharge device having an anodic arc, and depositing material from the flux stream on the heated substrate, wherein the flux stream comprises a carbon vapor and the material deposited on the substrate comprises graphene; and removing the deposited material from the substrate using a collection device, wherein the method is conducted at a pressure of up to 500 Torr and a temperature of the substrate of about 700-1,200 degrees Celsius, and configuring a rate of producing the carbon vapor flux stream, a rate of depositing the graphene material from the flux stream onto the substrate, and the substrate temperature to form a single graphene layer on the substrate. Previously presented
The method of claim 18, further comprising enclosing a heating element in a heating block, the heating element imparting heat to the heating block, and the heating block dispersing the heat from the heating element uniformly throughout the heating block to uniformly heat the substrate. Previously presented
The method of claim 18, wherein the collection device comprises a brush. Previously presented
The method of claim 18, wherein the flux stream is provided by an anode electrode and a cathode electrode. Previously presented
The method of claim 18, further comprising rotating the heated substrate, depositing the flux stream on the rotating substrate at a first side of the substrate, and simultaneously removing the deposited material from a second side of the rotating substrate with the collection device, wherein the first side is different from the second side, and whereby the deposited graphene material has a thickness of one atom. Previously presented
A method comprising: providing a substrate; embedding a heating element in a solid cylindrical cement heating block, the heating element imparting heat to the heating block, and the heating block dispersing the heat from the heating element uniformly throughout the heating block to uniformly heat the substrate to a temperature of 700-1,200 degrees Celsius; producing a carbon vapor flux stream by an anodic arc discharge device having an anodic arc, and depositing a graphene material from the flux stream onto the heated substrate at a pressure of up to 500 Torr; removing the deposited graphene material from the heated substrate using a collection device; and, configuring a rate of producing the carbon vapor flux stream, a rate of depositing the graphene material from the flux stream onto the substrate, and substrate temperature to form a single graphene layer on the substrate. Previously presented
The method of claim 30, wherein the substrate is a tube coaxially arranged about the cylindrical heating block. Previously presented
The method of claim 30, wherein the substrate has a cylindrical shape and the cylindrical heating block is concentrically arranged inside the cylindrical substrate whereby an inside diameter of the cylindrical substrate is greater than an outer diameter of the cylindrical heating block. Previously presented
The method of claim 30, wherein the collection device comprises a brush. Previously presented
The method of claim 30, further comprising rotating the substrate, wherein the carbon vapor flux stream is deposited on the rotating substrate at a first side of the rotating substrate simultaneously with the collection device removing the deposited graphene material from a second side of the rotating substrate, wherein the Previously presented
The method of claim 30, wherein the deposited atom. Previously presented
38-41. Canceled
Canceled first side is different from the second side. comprises a top portion of the substrate and substrate. Previously presented is cylindrical and has a longitudinal axis that graphene material has a thickness of one
Materials described outside the worked examples.
graphene
carbon vapor
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
SEM images of as-grown graphene film on copper foil and mechanically transferred to TEM grid (FIGS. 3(a)-(c))
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Pressure | 0.01 Torr | — |
Temperature | 700–1200 °C |
Related documents with shared materials, methods, properties, or citations.
cement
copper
Cu
graphite
helium
He
nickel-chromium resistant wire
Optical microscope image of synthesized graphene platelets (FIG. 3(d))
Raman spectra of synthesized graphene platelets (FIGS. 3(e)-(f))
TEM image of graphene flake (FIG. 3(g))
Electron diffraction pattern showing crystalline structure of graphene (FIG. 3(h))
| — |
Thickness | 1–2 mm | — |
Thickness | 1–20 cm | — |
Thickness | 1–40 cm | — |
Temperature | 1000–1100 °C | — |
Duration | 0–3 seconds | — |
Voltage | 30–40 V | — |
Thickness | 0.5–10 cm | — |
cement
copper
Cu
graphite
helium
He
nickel-chromium resistant wire
Optical microscope image of synthesized graphene platelets (FIG. 3(d))
Raman spectra of synthesized graphene platelets (FIGS. 3(e)-(f))
TEM image of graphene flake (FIG. 3(g))
Electron diffraction pattern showing crystalline structure of graphene (FIG. 3(h))
| — |
Thickness | 1–2 mm | — |
Thickness | 1–20 cm | — |
Thickness | 1–40 cm | — |
Temperature | 1000–1100 °C | — |
Duration | 0–3 seconds | — |
Voltage | 30–40 V | — |
Thickness | 0.5–10 cm | — |
cement
copper
Cu
graphite
helium
He
nickel-chromium resistant wire
Optical microscope image of synthesized graphene platelets (FIG. 3(d))
Raman spectra of synthesized graphene platelets (FIGS. 3(e)-(f))
TEM image of graphene flake (FIG. 3(g))
Electron diffraction pattern showing crystalline structure of graphene (FIG. 3(h))
| — |
Thickness | 1–2 mm | — |
Thickness | 1–20 cm | — |
Thickness | 1–40 cm | — |
Temperature | 1000–1100 °C | — |
Duration | 0–3 seconds | — |
Voltage | 30–40 V | — |
Thickness | 0.5–10 cm | — |
cement
copper
Cu
graphite
helium
He
nickel-chromium resistant wire
Optical microscope image of synthesized graphene platelets (FIG. 3(d))
Raman spectra of synthesized graphene platelets (FIGS. 3(e)-(f))
TEM image of graphene flake (FIG. 3(g))
Electron diffraction pattern showing crystalline structure of graphene (FIG. 3(h))
| — |
Thickness | 1–2 mm | — |
Thickness | 1–20 cm | — |
Thickness | 1–40 cm | — |
Temperature | 1000–1100 °C | — |
Duration | 0–3 seconds | — |
Voltage | 30–40 V | — |
Thickness | 0.5–10 cm | — |