Patent
US 8,883,042PRODUCTION OF GRAPHENE SHEETS AND FEATURES VIA LASER PROCESSING OF GRAPHITE OXIDE/GRAPHENE OXIDE
Denis Aleksandrovich Sokolov
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 8,883,042Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is an exemplary and non-limiting method for producing graphene. FIGs. 2a and 2b are Raman Spectra showing peaks at the 2 D point illustrating the …
FIG. 2a. Two major peaks are assigned to the G mode (~ 1590 cm⁻¹) and the 2D (often referred to as G') mode 10 (~ 2720 cm 1). The G mode is the in-plane …
FIG. 3 shows the integrated ID/1 2D ratio as a function of 532 nm and 355 nm pulsed power.
FIG. 4a is a scanning electron microscope image of a graphene trench, or depression.
FIG. 5 is an illustration of the Raman Shift measured in a graphene trench, or depression.
FIG. 6 is an exemplary and non-limiting system for producing graphene.
FIG. 7 is a Raman Spectra showing peaks at the 2 D point illustrating the production of graphene using a femtosecond, 730nm laser. 20
FIG. 8 is scanning electron microscope image of a trench produced using a femtosecond laser. Any headings provided herein are for convenience only and do not …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of producing graphene, comprising: preparing a graphite oxide substrate by: exfoliating a plurality of graphene oxide sheets in an aqueous solution; neutralizing the aqueous solution to produce neutralized aqueous solution; centrifuging the neutralized aqueous solution; and allowing at least a portion of the water in the aqueous solution to evaporate or spin coating the aqueous solution on a material to provide for the graphite oxide substrate having a substrate depth; placing the graphite oxide substrate in an inert gaseous environment; and exposing an area of the graphite oxide substrate to a laser beam that produces ultraviolet and vacuum ultraviolet photons that is focused to a power density that to reduce [[s]] the graphite oxide by electronic excitations while in the inert gaseous environment to create graphene, wherein the inert gaseous environment further-comprises a rare gas or hydrogen.
(Cu rr ently amended) The method of claim 1, wherein the inert gaseous environment further comprises nitrogen.
The method of claim 1, wherein the laser beam is from a pulsed laser source or a continuous wave laser source.
The method of claim 1, wherein the wavelength of the laser beam is 532 nm or 355 nm.
The method of claim 1, wherein the area of the graphite oxide substrate is exposed for approximately 3 seconds to approximately 30 seconds.
The method of claim 1, wherein the laser beam is rasterized.
The method of claim 1, wherein the laser beam is focused or unfocused.
The method of claim 1, wherein the dried exfoliated graphene oxide sheets comprise interlaminar water. -2-
Graphene produced from the method of claim 1. withdrawn
(Cu rr ently amended) The method of Claim 1, ise s rare g as is selected from the group consistin gaseous environment further comprises a dopant to -3- withdrawn exfoliated graphene oxide sheets comprise wherein the incrt gasco c r M further- e ompr g of argon, xenon and [[or]] neon. -4-
canceled
canceled
(Withdrawn, currently amended) A system for producing graphene, comprising: a laser source configured to provide a laser beam; a graphite oxide substrate produced by: exfoliating a plurality of graphene oxide sheets in an aqueous solution; neutralizing the aqueous solution to produce neutralized aqueous solution; centrifuging the neutralized aqueous solution; and allowing at least a portion of the water in the aqueous solution to evaporate or spin coating the aqueous solution on a material to provide for the graphite oxide substrate having a substrate depth; and an inert gaseous environment provided by a gas flow cell having a gaseous inlet and a gaseous out, wherein the graphite oxide substrate is disposed within the inert gaseous environment, wherein an area of the graphite oxide substrate is exposed to the laser beam, wherein the laser beam produces ultraviolet and vacuum ultraviolet ph ot ons that is feusd to a power de nsity that reduce [[s]] the graphite oxide by electronic excitations to create graphene, wherein the inert gaseous environment further- comprises a rare gas or hydrogen.
The system of claim 13, wherein the laser beam is rasterized. withdrawn
The system of claim 13, wherein the laser beam is focused or unfocused. withdrawn
The system of claim 13, wherein the laser beam is from a pulsed laser source or a continuous wave laser source. withdrawn
The system of claim 13, wherein the area of the graphite oxide substrate is exposed for approximately 3 seconds to approximately 30 seconds. withdrawn
The system of claim 13, wherein the wavelength of the laser is 532 nm or 355 nm. 19-20. withdrawn
The system of claim 13, wherein the inert gaseous environment comprises nitrogen. withdrawn
The system of claim 13, wherein the inert provide for an n- or p-type graphene characterization.
The system of claim 13, wherein the dried interlaminar water. withdrawn
canceled
canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene production system with gas flow cell
Materials described outside the worked examples.
graphite oxide/graphene oxide
graphene oxide sheets (exfoliated)
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 is an exemplary and non-limiting method for producing graphene. FIGs. 2a and 2b are Raman Spectra showing peaks at the 2 D point illustrating the …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
ID/I2D ratio for graphene produced by continuous-wave excitation in N2 | -0.17 dimensionless | C |
interdefect distance/particle size from ID/IG ratio |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,883,042Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is an exemplary and non-limiting method for producing graphene. FIGs. 2a and 2b are Raman Spectra showing peaks at the 2 D point illustrating the …
FIG. 2a. Two major peaks are assigned to the G mode (~ 1590 cm⁻¹) and the 2D (often referred to as G') mode 10 (~ 2720 cm 1). The G mode is the in-plane …
FIG. 3 shows the integrated ID/1 2D ratio as a function of 532 nm and 355 nm pulsed power.
FIG. 4a is a scanning electron microscope image of a graphene trench, or depression.
FIG. 5 is an illustration of the Raman Shift measured in a graphene trench, or depression.
FIG. 6 is an exemplary and non-limiting system for producing graphene.
FIG. 7 is a Raman Spectra showing peaks at the 2 D point illustrating the production of graphene using a femtosecond, 730nm laser. 20
FIG. 8 is scanning electron microscope image of a trench produced using a femtosecond laser. Any headings provided herein are for convenience only and do not …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of producing graphene, comprising: preparing a graphite oxide substrate by: exfoliating a plurality of graphene oxide sheets in an aqueous solution; neutralizing the aqueous solution to produce neutralized aqueous solution; centrifuging the neutralized aqueous solution; and allowing at least a portion of the water in the aqueous solution to evaporate or spin coating the aqueous solution on a material to provide for the graphite oxide substrate having a substrate depth; placing the graphite oxide substrate in an inert gaseous environment; and exposing an area of the graphite oxide substrate to a laser beam that produces ultraviolet and vacuum ultraviolet photons that is focused to a power density that to reduce [[s]] the graphite oxide by electronic excitations while in the inert gaseous environment to create graphene, wherein the inert gaseous environment further-comprises a rare gas or hydrogen.
(Cu rr ently amended) The method of claim 1, wherein the inert gaseous environment further comprises nitrogen.
The method of claim 1, wherein the laser beam is from a pulsed laser source or a continuous wave laser source.
The method of claim 1, wherein the wavelength of the laser beam is 532 nm or 355 nm.
The method of claim 1, wherein the area of the graphite oxide substrate is exposed for approximately 3 seconds to approximately 30 seconds.
The method of claim 1, wherein the laser beam is rasterized.
The method of claim 1, wherein the laser beam is focused or unfocused.
The method of claim 1, wherein the dried exfoliated graphene oxide sheets comprise interlaminar water. -2-
Graphene produced from the method of claim 1. withdrawn
(Cu rr ently amended) The method of Claim 1, ise s rare g as is selected from the group consistin gaseous environment further comprises a dopant to -3- withdrawn exfoliated graphene oxide sheets comprise wherein the incrt gasco c r M further- e ompr g of argon, xenon and [[or]] neon. -4-
canceled
canceled
(Withdrawn, currently amended) A system for producing graphene, comprising: a laser source configured to provide a laser beam; a graphite oxide substrate produced by: exfoliating a plurality of graphene oxide sheets in an aqueous solution; neutralizing the aqueous solution to produce neutralized aqueous solution; centrifuging the neutralized aqueous solution; and allowing at least a portion of the water in the aqueous solution to evaporate or spin coating the aqueous solution on a material to provide for the graphite oxide substrate having a substrate depth; and an inert gaseous environment provided by a gas flow cell having a gaseous inlet and a gaseous out, wherein the graphite oxide substrate is disposed within the inert gaseous environment, wherein an area of the graphite oxide substrate is exposed to the laser beam, wherein the laser beam produces ultraviolet and vacuum ultraviolet ph ot ons that is feusd to a power de nsity that reduce [[s]] the graphite oxide by electronic excitations to create graphene, wherein the inert gaseous environment further- comprises a rare gas or hydrogen.
The system of claim 13, wherein the laser beam is rasterized. withdrawn
The system of claim 13, wherein the laser beam is focused or unfocused. withdrawn
The system of claim 13, wherein the laser beam is from a pulsed laser source or a continuous wave laser source. withdrawn
The system of claim 13, wherein the area of the graphite oxide substrate is exposed for approximately 3 seconds to approximately 30 seconds. withdrawn
The system of claim 13, wherein the wavelength of the laser is 532 nm or 355 nm. 19-20. withdrawn
The system of claim 13, wherein the inert gaseous environment comprises nitrogen. withdrawn
The system of claim 13, wherein the inert provide for an n- or p-type graphene characterization.
The system of claim 13, wherein the dried interlaminar water. withdrawn
canceled
canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene production system with gas flow cell
Materials described outside the worked examples.
graphite oxide/graphene oxide
graphene oxide sheets (exfoliated)
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 is an exemplary and non-limiting method for producing graphene. FIGs. 2a and 2b are Raman Spectra showing peaks at the 2 D point illustrating the …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
ID/I2D ratio for graphene produced by continuous-wave excitation in N2 | -0.17 dimensionless | C |
interdefect distance/particle size from ID/IG ratio |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,883,042Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is an exemplary and non-limiting method for producing graphene. FIGs. 2a and 2b are Raman Spectra showing peaks at the 2 D point illustrating the …
FIG. 2a. Two major peaks are assigned to the G mode (~ 1590 cm⁻¹) and the 2D (often referred to as G') mode 10 (~ 2720 cm 1). The G mode is the in-plane …
FIG. 3 shows the integrated ID/1 2D ratio as a function of 532 nm and 355 nm pulsed power.
FIG. 4a is a scanning electron microscope image of a graphene trench, or depression.
FIG. 5 is an illustration of the Raman Shift measured in a graphene trench, or depression.
FIG. 6 is an exemplary and non-limiting system for producing graphene.
FIG. 7 is a Raman Spectra showing peaks at the 2 D point illustrating the production of graphene using a femtosecond, 730nm laser. 20
FIG. 8 is scanning electron microscope image of a trench produced using a femtosecond laser. Any headings provided herein are for convenience only and do not …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of producing graphene, comprising: preparing a graphite oxide substrate by: exfoliating a plurality of graphene oxide sheets in an aqueous solution; neutralizing the aqueous solution to produce neutralized aqueous solution; centrifuging the neutralized aqueous solution; and allowing at least a portion of the water in the aqueous solution to evaporate or spin coating the aqueous solution on a material to provide for the graphite oxide substrate having a substrate depth; placing the graphite oxide substrate in an inert gaseous environment; and exposing an area of the graphite oxide substrate to a laser beam that produces ultraviolet and vacuum ultraviolet photons that is focused to a power density that to reduce [[s]] the graphite oxide by electronic excitations while in the inert gaseous environment to create graphene, wherein the inert gaseous environment further-comprises a rare gas or hydrogen.
(Cu rr ently amended) The method of claim 1, wherein the inert gaseous environment further comprises nitrogen.
The method of claim 1, wherein the laser beam is from a pulsed laser source or a continuous wave laser source.
The method of claim 1, wherein the wavelength of the laser beam is 532 nm or 355 nm.
The method of claim 1, wherein the area of the graphite oxide substrate is exposed for approximately 3 seconds to approximately 30 seconds.
The method of claim 1, wherein the laser beam is rasterized.
The method of claim 1, wherein the laser beam is focused or unfocused.
The method of claim 1, wherein the dried exfoliated graphene oxide sheets comprise interlaminar water. -2-
Graphene produced from the method of claim 1. withdrawn
(Cu rr ently amended) The method of Claim 1, ise s rare g as is selected from the group consistin gaseous environment further comprises a dopant to -3- withdrawn exfoliated graphene oxide sheets comprise wherein the incrt gasco c r M further- e ompr g of argon, xenon and [[or]] neon. -4-
canceled
canceled
(Withdrawn, currently amended) A system for producing graphene, comprising: a laser source configured to provide a laser beam; a graphite oxide substrate produced by: exfoliating a plurality of graphene oxide sheets in an aqueous solution; neutralizing the aqueous solution to produce neutralized aqueous solution; centrifuging the neutralized aqueous solution; and allowing at least a portion of the water in the aqueous solution to evaporate or spin coating the aqueous solution on a material to provide for the graphite oxide substrate having a substrate depth; and an inert gaseous environment provided by a gas flow cell having a gaseous inlet and a gaseous out, wherein the graphite oxide substrate is disposed within the inert gaseous environment, wherein an area of the graphite oxide substrate is exposed to the laser beam, wherein the laser beam produces ultraviolet and vacuum ultraviolet ph ot ons that is feusd to a power de nsity that reduce [[s]] the graphite oxide by electronic excitations to create graphene, wherein the inert gaseous environment further- comprises a rare gas or hydrogen.
The system of claim 13, wherein the laser beam is rasterized. withdrawn
The system of claim 13, wherein the laser beam is focused or unfocused. withdrawn
The system of claim 13, wherein the laser beam is from a pulsed laser source or a continuous wave laser source. withdrawn
The system of claim 13, wherein the area of the graphite oxide substrate is exposed for approximately 3 seconds to approximately 30 seconds. withdrawn
The system of claim 13, wherein the wavelength of the laser is 532 nm or 355 nm. 19-20. withdrawn
The system of claim 13, wherein the inert gaseous environment comprises nitrogen. withdrawn
The system of claim 13, wherein the inert provide for an n- or p-type graphene characterization.
The system of claim 13, wherein the dried interlaminar water. withdrawn
canceled
canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene production system with gas flow cell
Materials described outside the worked examples.
graphite oxide/graphene oxide
graphene oxide sheets (exfoliated)
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 is an exemplary and non-limiting method for producing graphene. FIGs. 2a and 2b are Raman Spectra showing peaks at the 2 D point illustrating the …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
ID/I2D ratio for graphene produced by continuous-wave excitation in N2 | -0.17 dimensionless | C |
interdefect distance/particle size from ID/IG ratio |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,883,042Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is an exemplary and non-limiting method for producing graphene. FIGs. 2a and 2b are Raman Spectra showing peaks at the 2 D point illustrating the …
FIG. 2a. Two major peaks are assigned to the G mode (~ 1590 cm⁻¹) and the 2D (often referred to as G') mode 10 (~ 2720 cm 1). The G mode is the in-plane …
FIG. 3 shows the integrated ID/1 2D ratio as a function of 532 nm and 355 nm pulsed power.
FIG. 4a is a scanning electron microscope image of a graphene trench, or depression.
FIG. 5 is an illustration of the Raman Shift measured in a graphene trench, or depression.
FIG. 6 is an exemplary and non-limiting system for producing graphene.
FIG. 7 is a Raman Spectra showing peaks at the 2 D point illustrating the production of graphene using a femtosecond, 730nm laser. 20
FIG. 8 is scanning electron microscope image of a trench produced using a femtosecond laser. Any headings provided herein are for convenience only and do not …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of producing graphene, comprising: preparing a graphite oxide substrate by: exfoliating a plurality of graphene oxide sheets in an aqueous solution; neutralizing the aqueous solution to produce neutralized aqueous solution; centrifuging the neutralized aqueous solution; and allowing at least a portion of the water in the aqueous solution to evaporate or spin coating the aqueous solution on a material to provide for the graphite oxide substrate having a substrate depth; placing the graphite oxide substrate in an inert gaseous environment; and exposing an area of the graphite oxide substrate to a laser beam that produces ultraviolet and vacuum ultraviolet photons that is focused to a power density that to reduce [[s]] the graphite oxide by electronic excitations while in the inert gaseous environment to create graphene, wherein the inert gaseous environment further-comprises a rare gas or hydrogen.
(Cu rr ently amended) The method of claim 1, wherein the inert gaseous environment further comprises nitrogen.
The method of claim 1, wherein the laser beam is from a pulsed laser source or a continuous wave laser source.
The method of claim 1, wherein the wavelength of the laser beam is 532 nm or 355 nm.
The method of claim 1, wherein the area of the graphite oxide substrate is exposed for approximately 3 seconds to approximately 30 seconds.
The method of claim 1, wherein the laser beam is rasterized.
The method of claim 1, wherein the laser beam is focused or unfocused.
The method of claim 1, wherein the dried exfoliated graphene oxide sheets comprise interlaminar water. -2-
Graphene produced from the method of claim 1. withdrawn
(Cu rr ently amended) The method of Claim 1, ise s rare g as is selected from the group consistin gaseous environment further comprises a dopant to -3- withdrawn exfoliated graphene oxide sheets comprise wherein the incrt gasco c r M further- e ompr g of argon, xenon and [[or]] neon. -4-
canceled
canceled
(Withdrawn, currently amended) A system for producing graphene, comprising: a laser source configured to provide a laser beam; a graphite oxide substrate produced by: exfoliating a plurality of graphene oxide sheets in an aqueous solution; neutralizing the aqueous solution to produce neutralized aqueous solution; centrifuging the neutralized aqueous solution; and allowing at least a portion of the water in the aqueous solution to evaporate or spin coating the aqueous solution on a material to provide for the graphite oxide substrate having a substrate depth; and an inert gaseous environment provided by a gas flow cell having a gaseous inlet and a gaseous out, wherein the graphite oxide substrate is disposed within the inert gaseous environment, wherein an area of the graphite oxide substrate is exposed to the laser beam, wherein the laser beam produces ultraviolet and vacuum ultraviolet ph ot ons that is feusd to a power de nsity that reduce [[s]] the graphite oxide by electronic excitations to create graphene, wherein the inert gaseous environment further- comprises a rare gas or hydrogen.
The system of claim 13, wherein the laser beam is rasterized. withdrawn
The system of claim 13, wherein the laser beam is focused or unfocused. withdrawn
The system of claim 13, wherein the laser beam is from a pulsed laser source or a continuous wave laser source. withdrawn
The system of claim 13, wherein the area of the graphite oxide substrate is exposed for approximately 3 seconds to approximately 30 seconds. withdrawn
The system of claim 13, wherein the wavelength of the laser is 532 nm or 355 nm. 19-20. withdrawn
The system of claim 13, wherein the inert gaseous environment comprises nitrogen. withdrawn
The system of claim 13, wherein the inert provide for an n- or p-type graphene characterization.
The system of claim 13, wherein the dried interlaminar water. withdrawn
canceled
canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene production system with gas flow cell
Materials described outside the worked examples.
graphite oxide/graphene oxide
graphene oxide sheets (exfoliated)
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 is an exemplary and non-limiting method for producing graphene. FIGs. 2a and 2b are Raman Spectra showing peaks at the 2 D point illustrating the …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
ID/I2D ratio for graphene produced by continuous-wave excitation in N2 | -0.17 dimensionless | C |
interdefect distance/particle size from ID/IG ratio |
Related documents with shared materials, methods, properties, or citations.
graphene
C
nitrogen
N₂
argon
Ar
xenon
Xe
neon
Ne
hydrogen
H₂
FIG. 4a is a scanning electron microscope image of a graphene trench, or depression.
FIG. 4a is a scanning electron microscope image of a graphene trench, or depression.
FIG. 5 is an illustration of the Raman Shift measured in a graphene trench, or depression.
FIG. 7 is a Raman Spectra showing peaks at the 2 D point illustrating the production of graphene using a femtosecond, 730nm laser. 20
FIG. 8 is scanning electron microscope image of a trench produced using a femtosecond laser. Any headings provided herein are for convenience only and do not …
| 40 nm |
C |
— | 2.5–4 eV | — |
Thickness | 5–10 cm | — |
— | 5–50 eV | — |
Duration | 3–30 seconds | — |
graphene
C
nitrogen
N₂
argon
Ar
xenon
Xe
neon
Ne
hydrogen
H₂
FIG. 4a is a scanning electron microscope image of a graphene trench, or depression.
FIG. 4a is a scanning electron microscope image of a graphene trench, or depression.
FIG. 5 is an illustration of the Raman Shift measured in a graphene trench, or depression.
FIG. 7 is a Raman Spectra showing peaks at the 2 D point illustrating the production of graphene using a femtosecond, 730nm laser. 20
FIG. 8 is scanning electron microscope image of a trench produced using a femtosecond laser. Any headings provided herein are for convenience only and do not …
| 40 nm |
C |
— | 2.5–4 eV | — |
Thickness | 5–10 cm | — |
— | 5–50 eV | — |
Duration | 3–30 seconds | — |
graphene
C
nitrogen
N₂
argon
Ar
xenon
Xe
neon
Ne
hydrogen
H₂
FIG. 4a is a scanning electron microscope image of a graphene trench, or depression.
FIG. 4a is a scanning electron microscope image of a graphene trench, or depression.
FIG. 5 is an illustration of the Raman Shift measured in a graphene trench, or depression.
FIG. 7 is a Raman Spectra showing peaks at the 2 D point illustrating the production of graphene using a femtosecond, 730nm laser. 20
FIG. 8 is scanning electron microscope image of a trench produced using a femtosecond laser. Any headings provided herein are for convenience only and do not …
| 40 nm |
C |
— | 2.5–4 eV | — |
Thickness | 5–10 cm | — |
— | 5–50 eV | — |
Duration | 3–30 seconds | — |
graphene
C
nitrogen
N₂
argon
Ar
xenon
Xe
neon
Ne
hydrogen
H₂
FIG. 4a is a scanning electron microscope image of a graphene trench, or depression.
FIG. 4a is a scanning electron microscope image of a graphene trench, or depression.
FIG. 5 is an illustration of the Raman Shift measured in a graphene trench, or depression.
FIG. 7 is a Raman Spectra showing peaks at the 2 D point illustrating the production of graphene using a femtosecond, 730nm laser. 20
FIG. 8 is scanning electron microscope image of a trench produced using a femtosecond laser. Any headings provided herein are for convenience only and do not …
| 40 nm |
C |
— | 2.5–4 eV | — |
Thickness | 5–10 cm | — |
— | 5–50 eV | — |
Duration | 3–30 seconds | — |