Patent
US 10,549,999sulfur-containing cations
sulfonium ions
trialkyl sulfonium ions
counteranions (bis(trifluoromethylsulfonyl)imide, bromide, BF₄-, ClO4, PF₆-)
non-aqueous solvent
phosphorous-containing cations
phosphonium ions
tetraalkyl phosphonium ions
tetrabutyl phosphonium
tetraethyl phosphonium
tetramethyl phosphonium
counteranions (hydroxide, bromide, BF₄-, ClO₄-, PF₆-)
highly ordered pyrolytic graphite
natural graphite
synthetic graphite
trimethyl sulfonium
N-methyl-2-pyrrolidone
N,N'-dimethyl formamide
dimethyl sulfoxide
DMSO
triethyl sulfonium
Figure 2 shows a typical Raman spectrum of the product produced in Example 2; and
Figure 3 shows a typical Raman spectrum of the product produced in Example 3. The present invention is described in more detail by way of example only with reference to the following Examples.
| — |
Voltage | 15–15 V | — |
Voltage | 12–15 V | — |
Voltage | 12–12 V | — |
Voltage | 10–10 V | — |
Voltage | 1–20 V | — |
Voltage | 1–15 V | — |
Voltage | 1–12 V | — |
Voltage | 1–10 V | — |
Voltage | 2–10 V | — |
Voltage | 2–8 V | — |
Voltage | 2–5 V | — |
Voltage | 3–5 V | — |
Thickness | ≤ 1 nm | — |
Thickness | ≤ 50 nm | — |
Thickness | ≤ 20 nm | — |
Thickness | ≤ 10 nm | — |
Thickness | ≤ 90 nm | — |
Thickness | ≤ 10 cm | — |
Thickness | ≤ 1 mm | — |
Thickness | ≤ 1 µm | — |
Thickness | ≥ 1 nm | — |
Thickness | ≥ 1 µm | — |
Thickness | ≥ 10 cm | — |
Thickness | ≥ 1 mm | — |
Temperature | ≥ 20 °C | — |
Temperature | ≥ 10 °C | — |
Temperature | ≥ 30 °C | — |
Duration | ≥ 5 min | — |
sulfur-containing cations
sulfonium ions
trialkyl sulfonium ions
counteranions (bis(trifluoromethylsulfonyl)imide, bromide, BF₄-, ClO4, PF₆-)
non-aqueous solvent
phosphorous-containing cations
phosphonium ions
tetraalkyl phosphonium ions
tetrabutyl phosphonium
tetraethyl phosphonium
tetramethyl phosphonium
counteranions (hydroxide, bromide, BF₄-, ClO₄-, PF₆-)
highly ordered pyrolytic graphite
natural graphite
synthetic graphite
trimethyl sulfonium
N-methyl-2-pyrrolidone
N,N'-dimethyl formamide
dimethyl sulfoxide
DMSO
triethyl sulfonium
Figure 2 shows a typical Raman spectrum of the product produced in Example 2; and
Figure 3 shows a typical Raman spectrum of the product produced in Example 3. The present invention is described in more detail by way of example only with reference to the following Examples.
| — |
Voltage | 15–15 V | — |
Voltage | 12–15 V | — |
Voltage | 12–12 V | — |
Voltage | 10–10 V | — |
Voltage | 1–20 V | — |
Voltage | 1–15 V | — |
Voltage | 1–12 V | — |
Voltage | 1–10 V | — |
Voltage | 2–10 V | — |
Voltage | 2–8 V | — |
Voltage | 2–5 V | — |
Voltage | 3–5 V | — |
Thickness | ≤ 1 nm | — |
Thickness | ≤ 50 nm | — |
Thickness | ≤ 20 nm | — |
Thickness | ≤ 10 nm | — |
Thickness | ≤ 90 nm | — |
Thickness | ≤ 10 cm | — |
Thickness | ≤ 1 mm | — |
Thickness | ≤ 1 µm | — |
Thickness | ≥ 1 nm | — |
Thickness | ≥ 1 µm | — |
Thickness | ≥ 10 cm | — |
Thickness | ≥ 1 mm | — |
Temperature | ≥ 20 °C | — |
Temperature | ≥ 10 °C | — |
Temperature | ≥ 30 °C | — |
Duration | ≥ 5 min | — |
sulfur-containing cations
sulfonium ions
trialkyl sulfonium ions
counteranions (bis(trifluoromethylsulfonyl)imide, bromide, BF₄-, ClO4, PF₆-)
non-aqueous solvent
phosphorous-containing cations
phosphonium ions
tetraalkyl phosphonium ions
tetrabutyl phosphonium
tetraethyl phosphonium
tetramethyl phosphonium
counteranions (hydroxide, bromide, BF₄-, ClO₄-, PF₆-)
highly ordered pyrolytic graphite
natural graphite
synthetic graphite
trimethyl sulfonium
N-methyl-2-pyrrolidone
N,N'-dimethyl formamide
dimethyl sulfoxide
DMSO
triethyl sulfonium
Figure 2 shows a typical Raman spectrum of the product produced in Example 2; and
Figure 3 shows a typical Raman spectrum of the product produced in Example 3. The present invention is described in more detail by way of example only with reference to the following Examples.
| — |
Voltage | 15–15 V | — |
Voltage | 12–15 V | — |
Voltage | 12–12 V | — |
Voltage | 10–10 V | — |
Voltage | 1–20 V | — |
Voltage | 1–15 V | — |
Voltage | 1–12 V | — |
Voltage | 1–10 V | — |
Voltage | 2–10 V | — |
Voltage | 2–8 V | — |
Voltage | 2–5 V | — |
Voltage | 3–5 V | — |
Thickness | ≤ 1 nm | — |
Thickness | ≤ 50 nm | — |
Thickness | ≤ 20 nm | — |
Thickness | ≤ 10 nm | — |
Thickness | ≤ 90 nm | — |
Thickness | ≤ 10 cm | — |
Thickness | ≤ 1 mm | — |
Thickness | ≤ 1 µm | — |
Thickness | ≥ 1 nm | — |
Thickness | ≥ 1 µm | — |
Thickness | ≥ 10 cm | — |
Thickness | ≥ 1 mm | — |
Temperature | ≥ 20 °C | — |
Temperature | ≥ 10 °C | — |
Temperature | ≥ 30 °C | — |
Duration | ≥ 5 min | — |
sulfur-containing cations
sulfonium ions
trialkyl sulfonium ions
counteranions (bis(trifluoromethylsulfonyl)imide, bromide, BF₄-, ClO4, PF₆-)
non-aqueous solvent
phosphorous-containing cations
phosphonium ions
tetraalkyl phosphonium ions
tetrabutyl phosphonium
tetraethyl phosphonium
tetramethyl phosphonium
counteranions (hydroxide, bromide, BF₄-, ClO₄-, PF₆-)
highly ordered pyrolytic graphite
natural graphite
synthetic graphite
trimethyl sulfonium
N-methyl-2-pyrrolidone
N,N'-dimethyl formamide
dimethyl sulfoxide
DMSO
triethyl sulfonium
Figure 2 shows a typical Raman spectrum of the product produced in Example 2; and
Figure 3 shows a typical Raman spectrum of the product produced in Example 3. The present invention is described in more detail by way of example only with reference to the following Examples.
| — |
Voltage | 15–15 V | — |
Voltage | 12–15 V | — |
Voltage | 12–12 V | — |
Voltage | 10–10 V | — |
Voltage | 1–20 V | — |
Voltage | 1–15 V | — |
Voltage | 1–12 V | — |
Voltage | 1–10 V | — |
Voltage | 2–10 V | — |
Voltage | 2–8 V | — |
Voltage | 2–5 V | — |
Voltage | 3–5 V | — |
Thickness | ≤ 1 nm | — |
Thickness | ≤ 50 nm | — |
Thickness | ≤ 20 nm | — |
Thickness | ≤ 10 nm | — |
Thickness | ≤ 90 nm | — |
Thickness | ≤ 10 cm | — |
Thickness | ≤ 1 mm | — |
Thickness | ≤ 1 µm | — |
Thickness | ≥ 1 nm | — |
Thickness | ≥ 1 µm | — |
Thickness | ≥ 10 cm | — |
Thickness | ≥ 1 mm | — |
Temperature | ≥ 20 °C | — |
Temperature | ≥ 10 °C | — |
Temperature | ≥ 30 °C | — |
Duration | ≥ 5 min | — |