Patent
Atlas literature
Patent
US 10,625,250Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1B is an exemplary schematic illustration of a system comprising a graphene 15 layer and one or more substrate layers, according to some embodiments;
FIG. 2 D shows an SEM image of an exemplary suspended graphene device, 25 according to some embodiments, after a synthesis time of 180 minutes;
FIG. 3 B shows a cross-sectional schematic illustration of a suspended graphene device, according to some embodiments; 30
FIG. 4E shows an optical microscope image of a 10-micron-diameter suspended graphene device bisected by the edge of a bilayer graphene crystal, according to …
FIG. 5 shows a plot of fabrication yield as a function of aperture diameter, according to some embodiments;
FIG. 6A shows an optical microscope image of trilayer graphene suspended over an 15 about 10 micron aperture, according to some embodiments;
FIG. 7A shows density histograms showing the distribution of the G' Raman shift over the suspended region for various graphene devices, according to some …
FIG. 8 shows an exemplary schematic illustration outlining fabrication steps used to create a substrate, according to some embodiments;
FIG. 9 shows photographs of a substrate after aperture fabrication, according to some 25 embodiments;
FIG. 10 shows a schematic illustration outlining steps of a graphene wet transfer method, according to some embodiments;
FIG. 11 shows photographs of a solvent-exchange jar used as part of a graphene wet transfer method, according to some embodiments; 30
FIG. 12 shows optical micrographs of graphene that was transfe rr ed using ammonium persulfate (left) and ferric chloride (right), according to some …
FIG. 13 shows optical micrographs of broken graphene membranes, according to some embodiments;
FIG. 14 shows Raman map and point spectra of a 30-micron suspended bilayer graphene device, according to some embodiments; and 5
FIG. 15 shows Raman maps and point spectra of two broken 30-micron suspended monolayer graphene devices, according to some embodiments.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Canceled
(Cu rr ently Amended) The system of claim 1, further comprising a catalytic complex coupled to the second surface of the layer comprising graphene. Currently amended
(Cu rr ently Amended) The system of claim 3, wherein the catalytic complex is capable of catalyzing the formation of H 2, NADH, and/or NADPH +. Currently amended
The system of claim 3, wherein the catalytic complex comprises a hydrogenase, platinum, and/or at least one nanoparticle. New
Canceled
6-10. Canceled
Canceled
The system of claim 1, wherein the light-absorbing complex comprises chlorophyll, zinc phthalocyanine, zinc porphyrin, zinc heme, zinc TPP, beta-carotene, P680, and/or plastoquinone A. Previously presented
12-13. Canceled
Canceled
(Cu rr ently Amended) The system of claim 1, wherein the electron donor is coupled to the light-absorbing complex. Currently amended
15-17. Canceled
Canceled
(Cu rr ently Amended) The system of claim 1, further comprising an electron acceptor;. Currently amended
19-21. Canceled
Canceled
The system of claim 1, wherein the light-absorbing complex and/or electron donor are part of a protein complex. Previously presented
(Cu rr ently Amended) The system of claim 22, wherein the protein complex is photosystem II (PSII). Currently amended
24-27. Canceled
Canceled
(Cu rr ently Amended) The system of claim [[2]] 1, wherein the first substrate layer comprises a metal and/or a semiconductor,. Currently amended
29-33. Canceled
Canceled
(Cu rr ently Amended) The system of claim 1, wherein the graphene is monolayer graphene. Currently amended
35-37. Canceled
Canceled
(Cu rr ently Amended) The system of claim [[28]] !, wherein the layer comprising graphene comprises a plurality of holes, and wherein the holes have an average diameter of about 5 microns or less. Currently amended
39-44. Canceled
Canceled
(Cu rr ently Amended) The system of claim [[2]] 1, wherein the at least one aperture has a diameter of at least about 100 nm. Currently amended
46-52. Canceled
Canceled
(Cu rr ently Amended) The system of claim [[2]] 1, further comprising a second substrate layer positioned adjacent the first substrate layer. Currently amended
(Cu rr ently Amended) The system of claim 53, further comprising a third substrate layer positioned adjacent the second substrate layer. Currently amended
54-58. Canceled
Canceled
60-64. Canceled
Canceled
The system of claim 1, further comprising a battery and/or potentiostat in electrical communication with the layer comprising graphene and with a reference electrode. Previously presented
The system of claim 1, further comprising a battery in electrical communication with the layer comprising graphene and the first substrate layer or with the layer comprising graphene and an electrode. Previously presented
The system of claim 66, wherein the system is a field-effect transistor. Previously presented
67-87. Canceled
Canceled
(Cu rr ently Amended) The system of claim 1, further comprising a catalytic complex coupled to the first surface of the layer comprising graphene. Currently amended
The system of claim 1, wherein the electron donor comprises an oxygen-evolving complex. New
Layer stacks claimed or described, ordered top of device to substrate.
photocatalytic system comprising graphene
field-effect transistor
Materials described outside the worked examples.
graphene
monolayer graphene
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 D shows an SEM image of an exemplary suspended graphene device, 25 according to some embodiments, after a synthesis time of 180 minutes;
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 0.75–1.5 mm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,625,250Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1B is an exemplary schematic illustration of a system comprising a graphene 15 layer and one or more substrate layers, according to some embodiments;
FIG. 2 D shows an SEM image of an exemplary suspended graphene device, 25 according to some embodiments, after a synthesis time of 180 minutes;
FIG. 3 B shows a cross-sectional schematic illustration of a suspended graphene device, according to some embodiments; 30
FIG. 4E shows an optical microscope image of a 10-micron-diameter suspended graphene device bisected by the edge of a bilayer graphene crystal, according to …
FIG. 5 shows a plot of fabrication yield as a function of aperture diameter, according to some embodiments;
FIG. 6A shows an optical microscope image of trilayer graphene suspended over an 15 about 10 micron aperture, according to some embodiments;
FIG. 7A shows density histograms showing the distribution of the G' Raman shift over the suspended region for various graphene devices, according to some …
FIG. 8 shows an exemplary schematic illustration outlining fabrication steps used to create a substrate, according to some embodiments;
FIG. 9 shows photographs of a substrate after aperture fabrication, according to some 25 embodiments;
FIG. 10 shows a schematic illustration outlining steps of a graphene wet transfer method, according to some embodiments;
FIG. 11 shows photographs of a solvent-exchange jar used as part of a graphene wet transfer method, according to some embodiments; 30
FIG. 12 shows optical micrographs of graphene that was transfe rr ed using ammonium persulfate (left) and ferric chloride (right), according to some …
FIG. 13 shows optical micrographs of broken graphene membranes, according to some embodiments;
FIG. 14 shows Raman map and point spectra of a 30-micron suspended bilayer graphene device, according to some embodiments; and 5
FIG. 15 shows Raman maps and point spectra of two broken 30-micron suspended monolayer graphene devices, according to some embodiments.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Canceled
(Cu rr ently Amended) The system of claim 1, further comprising a catalytic complex coupled to the second surface of the layer comprising graphene. Currently amended
(Cu rr ently Amended) The system of claim 3, wherein the catalytic complex is capable of catalyzing the formation of H 2, NADH, and/or NADPH +. Currently amended
The system of claim 3, wherein the catalytic complex comprises a hydrogenase, platinum, and/or at least one nanoparticle. New
Canceled
6-10. Canceled
Canceled
The system of claim 1, wherein the light-absorbing complex comprises chlorophyll, zinc phthalocyanine, zinc porphyrin, zinc heme, zinc TPP, beta-carotene, P680, and/or plastoquinone A. Previously presented
12-13. Canceled
Canceled
(Cu rr ently Amended) The system of claim 1, wherein the electron donor is coupled to the light-absorbing complex. Currently amended
15-17. Canceled
Canceled
(Cu rr ently Amended) The system of claim 1, further comprising an electron acceptor;. Currently amended
19-21. Canceled
Canceled
The system of claim 1, wherein the light-absorbing complex and/or electron donor are part of a protein complex. Previously presented
(Cu rr ently Amended) The system of claim 22, wherein the protein complex is photosystem II (PSII). Currently amended
24-27. Canceled
Canceled
(Cu rr ently Amended) The system of claim [[2]] 1, wherein the first substrate layer comprises a metal and/or a semiconductor,. Currently amended
29-33. Canceled
Canceled
(Cu rr ently Amended) The system of claim 1, wherein the graphene is monolayer graphene. Currently amended
35-37. Canceled
Canceled
(Cu rr ently Amended) The system of claim [[28]] !, wherein the layer comprising graphene comprises a plurality of holes, and wherein the holes have an average diameter of about 5 microns or less. Currently amended
39-44. Canceled
Canceled
(Cu rr ently Amended) The system of claim [[2]] 1, wherein the at least one aperture has a diameter of at least about 100 nm. Currently amended
46-52. Canceled
Canceled
(Cu rr ently Amended) The system of claim [[2]] 1, further comprising a second substrate layer positioned adjacent the first substrate layer. Currently amended
(Cu rr ently Amended) The system of claim 53, further comprising a third substrate layer positioned adjacent the second substrate layer. Currently amended
54-58. Canceled
Canceled
60-64. Canceled
Canceled
The system of claim 1, further comprising a battery and/or potentiostat in electrical communication with the layer comprising graphene and with a reference electrode. Previously presented
The system of claim 1, further comprising a battery in electrical communication with the layer comprising graphene and the first substrate layer or with the layer comprising graphene and an electrode. Previously presented
The system of claim 66, wherein the system is a field-effect transistor. Previously presented
67-87. Canceled
Canceled
(Cu rr ently Amended) The system of claim 1, further comprising a catalytic complex coupled to the first surface of the layer comprising graphene. Currently amended
The system of claim 1, wherein the electron donor comprises an oxygen-evolving complex. New
Layer stacks claimed or described, ordered top of device to substrate.
photocatalytic system comprising graphene
field-effect transistor
Materials described outside the worked examples.
graphene
monolayer graphene
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 D shows an SEM image of an exemplary suspended graphene device, 25 according to some embodiments, after a synthesis time of 180 minutes;
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 0.75–1.5 mm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,625,250Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1B is an exemplary schematic illustration of a system comprising a graphene 15 layer and one or more substrate layers, according to some embodiments;
FIG. 2 D shows an SEM image of an exemplary suspended graphene device, 25 according to some embodiments, after a synthesis time of 180 minutes;
FIG. 3 B shows a cross-sectional schematic illustration of a suspended graphene device, according to some embodiments; 30
FIG. 4E shows an optical microscope image of a 10-micron-diameter suspended graphene device bisected by the edge of a bilayer graphene crystal, according to …
FIG. 5 shows a plot of fabrication yield as a function of aperture diameter, according to some embodiments;
FIG. 6A shows an optical microscope image of trilayer graphene suspended over an 15 about 10 micron aperture, according to some embodiments;
FIG. 7A shows density histograms showing the distribution of the G' Raman shift over the suspended region for various graphene devices, according to some …
FIG. 8 shows an exemplary schematic illustration outlining fabrication steps used to create a substrate, according to some embodiments;
FIG. 9 shows photographs of a substrate after aperture fabrication, according to some 25 embodiments;
FIG. 10 shows a schematic illustration outlining steps of a graphene wet transfer method, according to some embodiments;
FIG. 11 shows photographs of a solvent-exchange jar used as part of a graphene wet transfer method, according to some embodiments; 30
FIG. 12 shows optical micrographs of graphene that was transfe rr ed using ammonium persulfate (left) and ferric chloride (right), according to some …
FIG. 13 shows optical micrographs of broken graphene membranes, according to some embodiments;
FIG. 14 shows Raman map and point spectra of a 30-micron suspended bilayer graphene device, according to some embodiments; and 5
FIG. 15 shows Raman maps and point spectra of two broken 30-micron suspended monolayer graphene devices, according to some embodiments.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Canceled
(Cu rr ently Amended) The system of claim 1, further comprising a catalytic complex coupled to the second surface of the layer comprising graphene. Currently amended
(Cu rr ently Amended) The system of claim 3, wherein the catalytic complex is capable of catalyzing the formation of H 2, NADH, and/or NADPH +. Currently amended
The system of claim 3, wherein the catalytic complex comprises a hydrogenase, platinum, and/or at least one nanoparticle. New
Canceled
6-10. Canceled
Canceled
The system of claim 1, wherein the light-absorbing complex comprises chlorophyll, zinc phthalocyanine, zinc porphyrin, zinc heme, zinc TPP, beta-carotene, P680, and/or plastoquinone A. Previously presented
12-13. Canceled
Canceled
(Cu rr ently Amended) The system of claim 1, wherein the electron donor is coupled to the light-absorbing complex. Currently amended
15-17. Canceled
Canceled
(Cu rr ently Amended) The system of claim 1, further comprising an electron acceptor;. Currently amended
19-21. Canceled
Canceled
The system of claim 1, wherein the light-absorbing complex and/or electron donor are part of a protein complex. Previously presented
(Cu rr ently Amended) The system of claim 22, wherein the protein complex is photosystem II (PSII). Currently amended
24-27. Canceled
Canceled
(Cu rr ently Amended) The system of claim [[2]] 1, wherein the first substrate layer comprises a metal and/or a semiconductor,. Currently amended
29-33. Canceled
Canceled
(Cu rr ently Amended) The system of claim 1, wherein the graphene is monolayer graphene. Currently amended
35-37. Canceled
Canceled
(Cu rr ently Amended) The system of claim [[28]] !, wherein the layer comprising graphene comprises a plurality of holes, and wherein the holes have an average diameter of about 5 microns or less. Currently amended
39-44. Canceled
Canceled
(Cu rr ently Amended) The system of claim [[2]] 1, wherein the at least one aperture has a diameter of at least about 100 nm. Currently amended
46-52. Canceled
Canceled
(Cu rr ently Amended) The system of claim [[2]] 1, further comprising a second substrate layer positioned adjacent the first substrate layer. Currently amended
(Cu rr ently Amended) The system of claim 53, further comprising a third substrate layer positioned adjacent the second substrate layer. Currently amended
54-58. Canceled
Canceled
60-64. Canceled
Canceled
The system of claim 1, further comprising a battery and/or potentiostat in electrical communication with the layer comprising graphene and with a reference electrode. Previously presented
The system of claim 1, further comprising a battery in electrical communication with the layer comprising graphene and the first substrate layer or with the layer comprising graphene and an electrode. Previously presented
The system of claim 66, wherein the system is a field-effect transistor. Previously presented
67-87. Canceled
Canceled
(Cu rr ently Amended) The system of claim 1, further comprising a catalytic complex coupled to the first surface of the layer comprising graphene. Currently amended
The system of claim 1, wherein the electron donor comprises an oxygen-evolving complex. New
Layer stacks claimed or described, ordered top of device to substrate.
photocatalytic system comprising graphene
field-effect transistor
Materials described outside the worked examples.
graphene
monolayer graphene
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 D shows an SEM image of an exemplary suspended graphene device, 25 according to some embodiments, after a synthesis time of 180 minutes;
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 0.75–1.5 mm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,625,250Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1B is an exemplary schematic illustration of a system comprising a graphene 15 layer and one or more substrate layers, according to some embodiments;
FIG. 2 D shows an SEM image of an exemplary suspended graphene device, 25 according to some embodiments, after a synthesis time of 180 minutes;
FIG. 3 B shows a cross-sectional schematic illustration of a suspended graphene device, according to some embodiments; 30
FIG. 4E shows an optical microscope image of a 10-micron-diameter suspended graphene device bisected by the edge of a bilayer graphene crystal, according to …
FIG. 5 shows a plot of fabrication yield as a function of aperture diameter, according to some embodiments;
FIG. 6A shows an optical microscope image of trilayer graphene suspended over an 15 about 10 micron aperture, according to some embodiments;
FIG. 7A shows density histograms showing the distribution of the G' Raman shift over the suspended region for various graphene devices, according to some …
FIG. 8 shows an exemplary schematic illustration outlining fabrication steps used to create a substrate, according to some embodiments;
FIG. 9 shows photographs of a substrate after aperture fabrication, according to some 25 embodiments;
FIG. 10 shows a schematic illustration outlining steps of a graphene wet transfer method, according to some embodiments;
FIG. 11 shows photographs of a solvent-exchange jar used as part of a graphene wet transfer method, according to some embodiments; 30
FIG. 12 shows optical micrographs of graphene that was transfe rr ed using ammonium persulfate (left) and ferric chloride (right), according to some …
FIG. 13 shows optical micrographs of broken graphene membranes, according to some embodiments;
FIG. 14 shows Raman map and point spectra of a 30-micron suspended bilayer graphene device, according to some embodiments; and 5
FIG. 15 shows Raman maps and point spectra of two broken 30-micron suspended monolayer graphene devices, according to some embodiments.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Canceled
(Cu rr ently Amended) The system of claim 1, further comprising a catalytic complex coupled to the second surface of the layer comprising graphene. Currently amended
(Cu rr ently Amended) The system of claim 3, wherein the catalytic complex is capable of catalyzing the formation of H 2, NADH, and/or NADPH +. Currently amended
The system of claim 3, wherein the catalytic complex comprises a hydrogenase, platinum, and/or at least one nanoparticle. New
Canceled
6-10. Canceled
Canceled
The system of claim 1, wherein the light-absorbing complex comprises chlorophyll, zinc phthalocyanine, zinc porphyrin, zinc heme, zinc TPP, beta-carotene, P680, and/or plastoquinone A. Previously presented
12-13. Canceled
Canceled
(Cu rr ently Amended) The system of claim 1, wherein the electron donor is coupled to the light-absorbing complex. Currently amended
15-17. Canceled
Canceled
(Cu rr ently Amended) The system of claim 1, further comprising an electron acceptor;. Currently amended
19-21. Canceled
Canceled
The system of claim 1, wherein the light-absorbing complex and/or electron donor are part of a protein complex. Previously presented
(Cu rr ently Amended) The system of claim 22, wherein the protein complex is photosystem II (PSII). Currently amended
24-27. Canceled
Canceled
(Cu rr ently Amended) The system of claim [[2]] 1, wherein the first substrate layer comprises a metal and/or a semiconductor,. Currently amended
29-33. Canceled
Canceled
(Cu rr ently Amended) The system of claim 1, wherein the graphene is monolayer graphene. Currently amended
35-37. Canceled
Canceled
(Cu rr ently Amended) The system of claim [[28]] !, wherein the layer comprising graphene comprises a plurality of holes, and wherein the holes have an average diameter of about 5 microns or less. Currently amended
39-44. Canceled
Canceled
(Cu rr ently Amended) The system of claim [[2]] 1, wherein the at least one aperture has a diameter of at least about 100 nm. Currently amended
46-52. Canceled
Canceled
(Cu rr ently Amended) The system of claim [[2]] 1, further comprising a second substrate layer positioned adjacent the first substrate layer. Currently amended
(Cu rr ently Amended) The system of claim 53, further comprising a third substrate layer positioned adjacent the second substrate layer. Currently amended
54-58. Canceled
Canceled
60-64. Canceled
Canceled
The system of claim 1, further comprising a battery and/or potentiostat in electrical communication with the layer comprising graphene and with a reference electrode. Previously presented
The system of claim 1, further comprising a battery in electrical communication with the layer comprising graphene and the first substrate layer or with the layer comprising graphene and an electrode. Previously presented
The system of claim 66, wherein the system is a field-effect transistor. Previously presented
67-87. Canceled
Canceled
(Cu rr ently Amended) The system of claim 1, further comprising a catalytic complex coupled to the first surface of the layer comprising graphene. Currently amended
The system of claim 1, wherein the electron donor comprises an oxygen-evolving complex. New
Layer stacks claimed or described, ordered top of device to substrate.
photocatalytic system comprising graphene
field-effect transistor
Materials described outside the worked examples.
graphene
monolayer graphene
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 D shows an SEM image of an exemplary suspended graphene device, 25 according to some embodiments, after a synthesis time of 180 minutes;
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 0.75–1.5 mm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
light-absorbing complex
H₂
NADH
NADPH
chlorophyll
zinc phthalocyanine
zinc porphyrin
zinc heme
zinc TPP
beta-carotene
P₆₈₀
plastoquinone A
photosystem II (PSII)
hydrogenase
platinum
Pt
oxygen-evolving complex
FIG. 4E shows an optical microscope image of a 10-micron-diameter suspended graphene device bisected by the edge of a bilayer graphene crystal, according to …
FIG. 6A shows an optical microscope image of trilayer graphene suspended over an 15 about 10 micron aperture, according to some embodiments;
FIG. 7A shows density histograms showing the distribution of the G' Raman shift over the suspended region for various graphene devices, according to some …
FIG. 14 shows Raman map and point spectra of a 30-micron suspended bilayer graphene device, according to some embodiments; and 5
FIG. 15 shows Raman maps and point spectra of two broken 30-micron suspended monolayer graphene devices, according to some embodiments.
| 2–3.5 mm |
| — |
Thickness | 5–30 µm | — |
Thickness | 0.3–0.6 mm | — |
Thickness | 2675–2680 cm | — |
Thickness | 13–30 cm | — |
Thickness | 5–10 mm | — |
Duration | 1–2 minutes | — |
Pressure | ≤ 200 MPa | — |
Pressure | ≤ 50 mTorr | — |
Temperature | ≤ 30 °C | — |
Thickness | ≥ 1 mm | — |
Thickness | 390–740 nm | — |
Thickness | 390–495 nm | — |
Thickness | 620–740 nm | — |
Thickness | 100–390 nm | — |
Thickness | 100–300 nm | — |
Thickness | 100–400 nm | — |
Thickness | 100–700 nm | — |
Thickness | 100–740 nm | — |
Thickness | 100–1000 nm | — |
Thickness | 300–400 nm | — |
Thickness | 300–700 nm | — |
Thickness | 15–740 nm | — |
Thickness | 300–1000 nm | — |
Thickness | 390–680 nm | — |
Thickness | 390–700 nm | — |
Thickness | 400–680 nm | — |
Thickness | 400–700 nm | — |
Thickness | 400–740 nm | — |
Thickness | 400–1000 nm | — |
Thickness | 700–1000 nm | — |
Thickness | 740–1000 nm | — |
Thickness | 1–5 Å | — |
Thickness | 1–20 Å | — |
Thickness | 1–50 Å | — |
Thickness | 1–100 Å | — |
Thickness | 1–10 Å | — |
Thickness | 0.1–0.2 nm | — |
Thickness | 0.1–0.5 nm | — |
Thickness | 0.1–1 nm | — |
Thickness | 0.1–5 nm | — |
Thickness | 0.1–10 nm | — |
Thickness | 0.1–20 nm | — |
Thickness | 0.1–50 nm | — |
Thickness | 0.1–100 nm | — |
Thickness | 0.1–500 nm | — |
Thickness | 0.1–2000 nm | — |
Thickness | 0.1–5000 nm | — |
Thickness | 0.2–0.5 nm | — |
Thickness | 0.2–1 nm | — |
Thickness | 0.2–5 nm | — |
Thickness | 0.2–10 nm | — |
Thickness | 0.5–1 nm | — |
Thickness | 0.5–5 nm | — |
Thickness | 0.5–10 nm | — |
Thickness | 1–5 nm | — |
Thickness | 1–10 nm | — |
Thickness | 1–20 nm | — |
Thickness | 1–50 nm | — |
Thickness | 1–100 nm | — |
Thickness | 1–500 nm | — |
Thickness | 15–1000 nm | — |
Thickness | 1–2000 nm | — |
Thickness | 1–5000 nm | — |
Thickness | 5–10 nm | — |
Thickness | 10–20 nm | — |
Thickness | 10–50 nm | — |
Thickness | 10–100 nm | — |
Thickness | 10–500 nm | — |
Thickness | 10–1000 nm | — |
Thickness | 10–2000 nm | — |
Thickness | 10–5000 nm | — |
Thickness | 50–100 nm | — |
Thickness | 50–500 nm | — |
Thickness | 50–1000 nm | — |
Thickness | 50–2000 nm | — |
Thickness | 20–5000 nm | — |
Thickness | 100–500 nm | — |
Thickness | 100–2000 nm | — |
Thickness | 100–5000 nm | — |
Thickness | 1–5 µm | — |
Thickness | 100–10000 nm | — |
Thickness | 100–20000 nm | — |
Thickness | 100–30000 nm | — |
Thickness | 100–40000 nm | — |
Thickness | 10–15 µm | — |
Thickness | 1–20 µm | — |
Thickness | 1–30 µm | — |
Thickness | 1–40 µm | — |
Thickness | 5–10 µm | — |
Thickness | 5–20 µm | — |
Thickness | 5–40 µm | — |
Thickness | 10–20 µm | — |
Thickness | 10–30 µm | — |
Thickness | 10–40 µm | — |
Thickness | 15–20 µm | — |
Thickness | 20–30 µm | — |
Thickness | 15–40 µm | — |
Thickness | 20–40 µm | — |
Thickness | 30–40 µm | — |
Thickness | 500–1000 µm | — |
Thickness | 500000–5000000 nm | — |
Thickness | 500000–10000000 nm | — |
Thickness | 5000–20000000 nm | — |
Thickness | 500000–50000000 nm | — |
Thickness | 500000–100000000 nm | — |
Thickness | 1–2 cm | — |
Thickness | 1–5 cm | — |
Thickness | 1–10 cm | — |
Thickness | 2–10 cm | — |
Thickness | 5–10 cm | — |
Thickness | 10–200 nm | — |
Thickness | 10–300 nm | — |
Thickness | 50–200 nm | — |
Thickness | 50–300 nm | — |
Voltage | 1–10 V | — |
Voltage | 1–20 V | — |
Voltage | 1–100 V | — |
Voltage | 1–200 V | — |
Voltage | 1–500 V | — |
Voltage | 10–50 V | — |
Voltage | 10–100 V | — |
Voltage | 10–200 V | — |
Voltage | 10–500 V | — |
Voltage | 50–100 V | — |
Voltage | 50–200 V | — |
Voltage | 50–500 V | — |
Voltage | 100–200 V | — |
Voltage | 100–500 V | — |
Voltage | 0.1–0.5 V | — |
Voltage | 0.1–1 V | — |
Voltage | 0.1–2 V | — |
Voltage | 0.1–5 V | — |
Voltage | 0.1–10 V | — |
Voltage | 0.5–1 V | — |
Voltage | 0.5–2 V | — |
Voltage | 0.5–5 V | — |
Voltage | 0.5–10 V | — |
Temperature | ≤ 60 °C | — |
Thickness | ≥ 1 nm | — |
Thickness | ≥ 200 nm | — |
Thickness | ≥ 300 nm | — |
Thickness | ≥ 390 nm | — |
Thickness | ≥ 400 nm | — |
Thickness | ≥ 450 nm | — |
Thickness | ≥ 500 nm | — |
Thickness | ≥ 550 nm | — |
Thickness | ≥ 600 nm | — |
Thickness | ≥ 650 nm | — |
Thickness | ≥ 740 nm | — |
Thickness | ≥ 800 nm | — |
Thickness | ≥ 900 nm | — |
Thickness | ≥ 1 µm | — |
Thickness | ≥ 10 nm | — |
Thickness | ≥ 20 nm | — |
Thickness | ≥ 50 nm | — |
Thickness | ≥ 10000 cm | — |
Thickness | ≥ 15000 cm | — |
Thickness | ≥ 20000 cm | — |
Thickness | ≥ 100000 cm | — |
Temperature | ≥ 60 °C | — |
Thickness | ≥ 0.2 nm | — |
Thickness | ≥ 0.5 nm | — |
Thickness | ≥ 2 nm | — |
Thickness | ≥ 5 nm | — |
Thickness | ≥ 5 µm | — |
Thickness | ≥ 2 µm | — |
Thickness | ≥ 15 µm | — |
Thickness | ≥ 20 µm | — |
Thickness | ≥ 25 µm | — |
Thickness | ≥ 30 µm | — |
Thickness | ≥ 35 µm | — |
Thickness | ≥ 40 µm | — |
Thickness | ≥ 500 µm | — |
Thickness | ≥ 0.5 cm | — |
Thickness | ≥ 1 cm | — |
Thickness | ≥ 2 cm | — |
Thickness | ≥ 5 cm | — |
Thickness | ≥ 10 cm | — |
Voltage | ≥ 1 V | — |
Voltage | ≥ 5 V | — |
Voltage | ≥ 10 V | — |
Voltage | ≥ 20 V | — |
Voltage | ≥ 50 V | — |
Voltage | ≥ 150 V | — |
Voltage | ≥ 200 V | — |
Voltage | ≥ 500 V | — |
Voltage | ≥ 0.1 V | — |
Voltage | ≥ 0.2 V | — |
Voltage | ≥ 0.5 V | — |
Voltage | ≥ 2 V | — |
light-absorbing complex
H₂
NADH
NADPH
chlorophyll
zinc phthalocyanine
zinc porphyrin
zinc heme
zinc TPP
beta-carotene
P₆₈₀
plastoquinone A
photosystem II (PSII)
hydrogenase
platinum
Pt
oxygen-evolving complex
FIG. 4E shows an optical microscope image of a 10-micron-diameter suspended graphene device bisected by the edge of a bilayer graphene crystal, according to …
FIG. 6A shows an optical microscope image of trilayer graphene suspended over an 15 about 10 micron aperture, according to some embodiments;
FIG. 7A shows density histograms showing the distribution of the G' Raman shift over the suspended region for various graphene devices, according to some …
FIG. 14 shows Raman map and point spectra of a 30-micron suspended bilayer graphene device, according to some embodiments; and 5
FIG. 15 shows Raman maps and point spectra of two broken 30-micron suspended monolayer graphene devices, according to some embodiments.
| 2–3.5 mm |
| — |
Thickness | 5–30 µm | — |
Thickness | 0.3–0.6 mm | — |
Thickness | 2675–2680 cm | — |
Thickness | 13–30 cm | — |
Thickness | 5–10 mm | — |
Duration | 1–2 minutes | — |
Pressure | ≤ 200 MPa | — |
Pressure | ≤ 50 mTorr | — |
Temperature | ≤ 30 °C | — |
Thickness | ≥ 1 mm | — |
Thickness | 390–740 nm | — |
Thickness | 390–495 nm | — |
Thickness | 620–740 nm | — |
Thickness | 100–390 nm | — |
Thickness | 100–300 nm | — |
Thickness | 100–400 nm | — |
Thickness | 100–700 nm | — |
Thickness | 100–740 nm | — |
Thickness | 100–1000 nm | — |
Thickness | 300–400 nm | — |
Thickness | 300–700 nm | — |
Thickness | 15–740 nm | — |
Thickness | 300–1000 nm | — |
Thickness | 390–680 nm | — |
Thickness | 390–700 nm | — |
Thickness | 400–680 nm | — |
Thickness | 400–700 nm | — |
Thickness | 400–740 nm | — |
Thickness | 400–1000 nm | — |
Thickness | 700–1000 nm | — |
Thickness | 740–1000 nm | — |
Thickness | 1–5 Å | — |
Thickness | 1–20 Å | — |
Thickness | 1–50 Å | — |
Thickness | 1–100 Å | — |
Thickness | 1–10 Å | — |
Thickness | 0.1–0.2 nm | — |
Thickness | 0.1–0.5 nm | — |
Thickness | 0.1–1 nm | — |
Thickness | 0.1–5 nm | — |
Thickness | 0.1–10 nm | — |
Thickness | 0.1–20 nm | — |
Thickness | 0.1–50 nm | — |
Thickness | 0.1–100 nm | — |
Thickness | 0.1–500 nm | — |
Thickness | 0.1–2000 nm | — |
Thickness | 0.1–5000 nm | — |
Thickness | 0.2–0.5 nm | — |
Thickness | 0.2–1 nm | — |
Thickness | 0.2–5 nm | — |
Thickness | 0.2–10 nm | — |
Thickness | 0.5–1 nm | — |
Thickness | 0.5–5 nm | — |
Thickness | 0.5–10 nm | — |
Thickness | 1–5 nm | — |
Thickness | 1–10 nm | — |
Thickness | 1–20 nm | — |
Thickness | 1–50 nm | — |
Thickness | 1–100 nm | — |
Thickness | 1–500 nm | — |
Thickness | 15–1000 nm | — |
Thickness | 1–2000 nm | — |
Thickness | 1–5000 nm | — |
Thickness | 5–10 nm | — |
Thickness | 10–20 nm | — |
Thickness | 10–50 nm | — |
Thickness | 10–100 nm | — |
Thickness | 10–500 nm | — |
Thickness | 10–1000 nm | — |
Thickness | 10–2000 nm | — |
Thickness | 10–5000 nm | — |
Thickness | 50–100 nm | — |
Thickness | 50–500 nm | — |
Thickness | 50–1000 nm | — |
Thickness | 50–2000 nm | — |
Thickness | 20–5000 nm | — |
Thickness | 100–500 nm | — |
Thickness | 100–2000 nm | — |
Thickness | 100–5000 nm | — |
Thickness | 1–5 µm | — |
Thickness | 100–10000 nm | — |
Thickness | 100–20000 nm | — |
Thickness | 100–30000 nm | — |
Thickness | 100–40000 nm | — |
Thickness | 10–15 µm | — |
Thickness | 1–20 µm | — |
Thickness | 1–30 µm | — |
Thickness | 1–40 µm | — |
Thickness | 5–10 µm | — |
Thickness | 5–20 µm | — |
Thickness | 5–40 µm | — |
Thickness | 10–20 µm | — |
Thickness | 10–30 µm | — |
Thickness | 10–40 µm | — |
Thickness | 15–20 µm | — |
Thickness | 20–30 µm | — |
Thickness | 15–40 µm | — |
Thickness | 20–40 µm | — |
Thickness | 30–40 µm | — |
Thickness | 500–1000 µm | — |
Thickness | 500000–5000000 nm | — |
Thickness | 500000–10000000 nm | — |
Thickness | 5000–20000000 nm | — |
Thickness | 500000–50000000 nm | — |
Thickness | 500000–100000000 nm | — |
Thickness | 1–2 cm | — |
Thickness | 1–5 cm | — |
Thickness | 1–10 cm | — |
Thickness | 2–10 cm | — |
Thickness | 5–10 cm | — |
Thickness | 10–200 nm | — |
Thickness | 10–300 nm | — |
Thickness | 50–200 nm | — |
Thickness | 50–300 nm | — |
Voltage | 1–10 V | — |
Voltage | 1–20 V | — |
Voltage | 1–100 V | — |
Voltage | 1–200 V | — |
Voltage | 1–500 V | — |
Voltage | 10–50 V | — |
Voltage | 10–100 V | — |
Voltage | 10–200 V | — |
Voltage | 10–500 V | — |
Voltage | 50–100 V | — |
Voltage | 50–200 V | — |
Voltage | 50–500 V | — |
Voltage | 100–200 V | — |
Voltage | 100–500 V | — |
Voltage | 0.1–0.5 V | — |
Voltage | 0.1–1 V | — |
Voltage | 0.1–2 V | — |
Voltage | 0.1–5 V | — |
Voltage | 0.1–10 V | — |
Voltage | 0.5–1 V | — |
Voltage | 0.5–2 V | — |
Voltage | 0.5–5 V | — |
Voltage | 0.5–10 V | — |
Temperature | ≤ 60 °C | — |
Thickness | ≥ 1 nm | — |
Thickness | ≥ 200 nm | — |
Thickness | ≥ 300 nm | — |
Thickness | ≥ 390 nm | — |
Thickness | ≥ 400 nm | — |
Thickness | ≥ 450 nm | — |
Thickness | ≥ 500 nm | — |
Thickness | ≥ 550 nm | — |
Thickness | ≥ 600 nm | — |
Thickness | ≥ 650 nm | — |
Thickness | ≥ 740 nm | — |
Thickness | ≥ 800 nm | — |
Thickness | ≥ 900 nm | — |
Thickness | ≥ 1 µm | — |
Thickness | ≥ 10 nm | — |
Thickness | ≥ 20 nm | — |
Thickness | ≥ 50 nm | — |
Thickness | ≥ 10000 cm | — |
Thickness | ≥ 15000 cm | — |
Thickness | ≥ 20000 cm | — |
Thickness | ≥ 100000 cm | — |
Temperature | ≥ 60 °C | — |
Thickness | ≥ 0.2 nm | — |
Thickness | ≥ 0.5 nm | — |
Thickness | ≥ 2 nm | — |
Thickness | ≥ 5 nm | — |
Thickness | ≥ 5 µm | — |
Thickness | ≥ 2 µm | — |
Thickness | ≥ 15 µm | — |
Thickness | ≥ 20 µm | — |
Thickness | ≥ 25 µm | — |
Thickness | ≥ 30 µm | — |
Thickness | ≥ 35 µm | — |
Thickness | ≥ 40 µm | — |
Thickness | ≥ 500 µm | — |
Thickness | ≥ 0.5 cm | — |
Thickness | ≥ 1 cm | — |
Thickness | ≥ 2 cm | — |
Thickness | ≥ 5 cm | — |
Thickness | ≥ 10 cm | — |
Voltage | ≥ 1 V | — |
Voltage | ≥ 5 V | — |
Voltage | ≥ 10 V | — |
Voltage | ≥ 20 V | — |
Voltage | ≥ 50 V | — |
Voltage | ≥ 150 V | — |
Voltage | ≥ 200 V | — |
Voltage | ≥ 500 V | — |
Voltage | ≥ 0.1 V | — |
Voltage | ≥ 0.2 V | — |
Voltage | ≥ 0.5 V | — |
Voltage | ≥ 2 V | — |
light-absorbing complex
H₂
NADH
NADPH
chlorophyll
zinc phthalocyanine
zinc porphyrin
zinc heme
zinc TPP
beta-carotene
P₆₈₀
plastoquinone A
photosystem II (PSII)
hydrogenase
platinum
Pt
oxygen-evolving complex
FIG. 4E shows an optical microscope image of a 10-micron-diameter suspended graphene device bisected by the edge of a bilayer graphene crystal, according to …
FIG. 6A shows an optical microscope image of trilayer graphene suspended over an 15 about 10 micron aperture, according to some embodiments;
FIG. 7A shows density histograms showing the distribution of the G' Raman shift over the suspended region for various graphene devices, according to some …
FIG. 14 shows Raman map and point spectra of a 30-micron suspended bilayer graphene device, according to some embodiments; and 5
FIG. 15 shows Raman maps and point spectra of two broken 30-micron suspended monolayer graphene devices, according to some embodiments.
| 2–3.5 mm |
| — |
Thickness | 5–30 µm | — |
Thickness | 0.3–0.6 mm | — |
Thickness | 2675–2680 cm | — |
Thickness | 13–30 cm | — |
Thickness | 5–10 mm | — |
Duration | 1–2 minutes | — |
Pressure | ≤ 200 MPa | — |
Pressure | ≤ 50 mTorr | — |
Temperature | ≤ 30 °C | — |
Thickness | ≥ 1 mm | — |
Thickness | 390–740 nm | — |
Thickness | 390–495 nm | — |
Thickness | 620–740 nm | — |
Thickness | 100–390 nm | — |
Thickness | 100–300 nm | — |
Thickness | 100–400 nm | — |
Thickness | 100–700 nm | — |
Thickness | 100–740 nm | — |
Thickness | 100–1000 nm | — |
Thickness | 300–400 nm | — |
Thickness | 300–700 nm | — |
Thickness | 15–740 nm | — |
Thickness | 300–1000 nm | — |
Thickness | 390–680 nm | — |
Thickness | 390–700 nm | — |
Thickness | 400–680 nm | — |
Thickness | 400–700 nm | — |
Thickness | 400–740 nm | — |
Thickness | 400–1000 nm | — |
Thickness | 700–1000 nm | — |
Thickness | 740–1000 nm | — |
Thickness | 1–5 Å | — |
Thickness | 1–20 Å | — |
Thickness | 1–50 Å | — |
Thickness | 1–100 Å | — |
Thickness | 1–10 Å | — |
Thickness | 0.1–0.2 nm | — |
Thickness | 0.1–0.5 nm | — |
Thickness | 0.1–1 nm | — |
Thickness | 0.1–5 nm | — |
Thickness | 0.1–10 nm | — |
Thickness | 0.1–20 nm | — |
Thickness | 0.1–50 nm | — |
Thickness | 0.1–100 nm | — |
Thickness | 0.1–500 nm | — |
Thickness | 0.1–2000 nm | — |
Thickness | 0.1–5000 nm | — |
Thickness | 0.2–0.5 nm | — |
Thickness | 0.2–1 nm | — |
Thickness | 0.2–5 nm | — |
Thickness | 0.2–10 nm | — |
Thickness | 0.5–1 nm | — |
Thickness | 0.5–5 nm | — |
Thickness | 0.5–10 nm | — |
Thickness | 1–5 nm | — |
Thickness | 1–10 nm | — |
Thickness | 1–20 nm | — |
Thickness | 1–50 nm | — |
Thickness | 1–100 nm | — |
Thickness | 1–500 nm | — |
Thickness | 15–1000 nm | — |
Thickness | 1–2000 nm | — |
Thickness | 1–5000 nm | — |
Thickness | 5–10 nm | — |
Thickness | 10–20 nm | — |
Thickness | 10–50 nm | — |
Thickness | 10–100 nm | — |
Thickness | 10–500 nm | — |
Thickness | 10–1000 nm | — |
Thickness | 10–2000 nm | — |
Thickness | 10–5000 nm | — |
Thickness | 50–100 nm | — |
Thickness | 50–500 nm | — |
Thickness | 50–1000 nm | — |
Thickness | 50–2000 nm | — |
Thickness | 20–5000 nm | — |
Thickness | 100–500 nm | — |
Thickness | 100–2000 nm | — |
Thickness | 100–5000 nm | — |
Thickness | 1–5 µm | — |
Thickness | 100–10000 nm | — |
Thickness | 100–20000 nm | — |
Thickness | 100–30000 nm | — |
Thickness | 100–40000 nm | — |
Thickness | 10–15 µm | — |
Thickness | 1–20 µm | — |
Thickness | 1–30 µm | — |
Thickness | 1–40 µm | — |
Thickness | 5–10 µm | — |
Thickness | 5–20 µm | — |
Thickness | 5–40 µm | — |
Thickness | 10–20 µm | — |
Thickness | 10–30 µm | — |
Thickness | 10–40 µm | — |
Thickness | 15–20 µm | — |
Thickness | 20–30 µm | — |
Thickness | 15–40 µm | — |
Thickness | 20–40 µm | — |
Thickness | 30–40 µm | — |
Thickness | 500–1000 µm | — |
Thickness | 500000–5000000 nm | — |
Thickness | 500000–10000000 nm | — |
Thickness | 5000–20000000 nm | — |
Thickness | 500000–50000000 nm | — |
Thickness | 500000–100000000 nm | — |
Thickness | 1–2 cm | — |
Thickness | 1–5 cm | — |
Thickness | 1–10 cm | — |
Thickness | 2–10 cm | — |
Thickness | 5–10 cm | — |
Thickness | 10–200 nm | — |
Thickness | 10–300 nm | — |
Thickness | 50–200 nm | — |
Thickness | 50–300 nm | — |
Voltage | 1–10 V | — |
Voltage | 1–20 V | — |
Voltage | 1–100 V | — |
Voltage | 1–200 V | — |
Voltage | 1–500 V | — |
Voltage | 10–50 V | — |
Voltage | 10–100 V | — |
Voltage | 10–200 V | — |
Voltage | 10–500 V | — |
Voltage | 50–100 V | — |
Voltage | 50–200 V | — |
Voltage | 50–500 V | — |
Voltage | 100–200 V | — |
Voltage | 100–500 V | — |
Voltage | 0.1–0.5 V | — |
Voltage | 0.1–1 V | — |
Voltage | 0.1–2 V | — |
Voltage | 0.1–5 V | — |
Voltage | 0.1–10 V | — |
Voltage | 0.5–1 V | — |
Voltage | 0.5–2 V | — |
Voltage | 0.5–5 V | — |
Voltage | 0.5–10 V | — |
Temperature | ≤ 60 °C | — |
Thickness | ≥ 1 nm | — |
Thickness | ≥ 200 nm | — |
Thickness | ≥ 300 nm | — |
Thickness | ≥ 390 nm | — |
Thickness | ≥ 400 nm | — |
Thickness | ≥ 450 nm | — |
Thickness | ≥ 500 nm | — |
Thickness | ≥ 550 nm | — |
Thickness | ≥ 600 nm | — |
Thickness | ≥ 650 nm | — |
Thickness | ≥ 740 nm | — |
Thickness | ≥ 800 nm | — |
Thickness | ≥ 900 nm | — |
Thickness | ≥ 1 µm | — |
Thickness | ≥ 10 nm | — |
Thickness | ≥ 20 nm | — |
Thickness | ≥ 50 nm | — |
Thickness | ≥ 10000 cm | — |
Thickness | ≥ 15000 cm | — |
Thickness | ≥ 20000 cm | — |
Thickness | ≥ 100000 cm | — |
Temperature | ≥ 60 °C | — |
Thickness | ≥ 0.2 nm | — |
Thickness | ≥ 0.5 nm | — |
Thickness | ≥ 2 nm | — |
Thickness | ≥ 5 nm | — |
Thickness | ≥ 5 µm | — |
Thickness | ≥ 2 µm | — |
Thickness | ≥ 15 µm | — |
Thickness | ≥ 20 µm | — |
Thickness | ≥ 25 µm | — |
Thickness | ≥ 30 µm | — |
Thickness | ≥ 35 µm | — |
Thickness | ≥ 40 µm | — |
Thickness | ≥ 500 µm | — |
Thickness | ≥ 0.5 cm | — |
Thickness | ≥ 1 cm | — |
Thickness | ≥ 2 cm | — |
Thickness | ≥ 5 cm | — |
Thickness | ≥ 10 cm | — |
Voltage | ≥ 1 V | — |
Voltage | ≥ 5 V | — |
Voltage | ≥ 10 V | — |
Voltage | ≥ 20 V | — |
Voltage | ≥ 50 V | — |
Voltage | ≥ 150 V | — |
Voltage | ≥ 200 V | — |
Voltage | ≥ 500 V | — |
Voltage | ≥ 0.1 V | — |
Voltage | ≥ 0.2 V | — |
Voltage | ≥ 0.5 V | — |
Voltage | ≥ 2 V | — |
light-absorbing complex
H₂
NADH
NADPH
chlorophyll
zinc phthalocyanine
zinc porphyrin
zinc heme
zinc TPP
beta-carotene
P₆₈₀
plastoquinone A
photosystem II (PSII)
hydrogenase
platinum
Pt
oxygen-evolving complex
FIG. 4E shows an optical microscope image of a 10-micron-diameter suspended graphene device bisected by the edge of a bilayer graphene crystal, according to …
FIG. 6A shows an optical microscope image of trilayer graphene suspended over an 15 about 10 micron aperture, according to some embodiments;
FIG. 7A shows density histograms showing the distribution of the G' Raman shift over the suspended region for various graphene devices, according to some …
FIG. 14 shows Raman map and point spectra of a 30-micron suspended bilayer graphene device, according to some embodiments; and 5
FIG. 15 shows Raman maps and point spectra of two broken 30-micron suspended monolayer graphene devices, according to some embodiments.
| 2–3.5 mm |
| — |
Thickness | 5–30 µm | — |
Thickness | 0.3–0.6 mm | — |
Thickness | 2675–2680 cm | — |
Thickness | 13–30 cm | — |
Thickness | 5–10 mm | — |
Duration | 1–2 minutes | — |
Pressure | ≤ 200 MPa | — |
Pressure | ≤ 50 mTorr | — |
Temperature | ≤ 30 °C | — |
Thickness | ≥ 1 mm | — |
Thickness | 390–740 nm | — |
Thickness | 390–495 nm | — |
Thickness | 620–740 nm | — |
Thickness | 100–390 nm | — |
Thickness | 100–300 nm | — |
Thickness | 100–400 nm | — |
Thickness | 100–700 nm | — |
Thickness | 100–740 nm | — |
Thickness | 100–1000 nm | — |
Thickness | 300–400 nm | — |
Thickness | 300–700 nm | — |
Thickness | 15–740 nm | — |
Thickness | 300–1000 nm | — |
Thickness | 390–680 nm | — |
Thickness | 390–700 nm | — |
Thickness | 400–680 nm | — |
Thickness | 400–700 nm | — |
Thickness | 400–740 nm | — |
Thickness | 400–1000 nm | — |
Thickness | 700–1000 nm | — |
Thickness | 740–1000 nm | — |
Thickness | 1–5 Å | — |
Thickness | 1–20 Å | — |
Thickness | 1–50 Å | — |
Thickness | 1–100 Å | — |
Thickness | 1–10 Å | — |
Thickness | 0.1–0.2 nm | — |
Thickness | 0.1–0.5 nm | — |
Thickness | 0.1–1 nm | — |
Thickness | 0.1–5 nm | — |
Thickness | 0.1–10 nm | — |
Thickness | 0.1–20 nm | — |
Thickness | 0.1–50 nm | — |
Thickness | 0.1–100 nm | — |
Thickness | 0.1–500 nm | — |
Thickness | 0.1–2000 nm | — |
Thickness | 0.1–5000 nm | — |
Thickness | 0.2–0.5 nm | — |
Thickness | 0.2–1 nm | — |
Thickness | 0.2–5 nm | — |
Thickness | 0.2–10 nm | — |
Thickness | 0.5–1 nm | — |
Thickness | 0.5–5 nm | — |
Thickness | 0.5–10 nm | — |
Thickness | 1–5 nm | — |
Thickness | 1–10 nm | — |
Thickness | 1–20 nm | — |
Thickness | 1–50 nm | — |
Thickness | 1–100 nm | — |
Thickness | 1–500 nm | — |
Thickness | 15–1000 nm | — |
Thickness | 1–2000 nm | — |
Thickness | 1–5000 nm | — |
Thickness | 5–10 nm | — |
Thickness | 10–20 nm | — |
Thickness | 10–50 nm | — |
Thickness | 10–100 nm | — |
Thickness | 10–500 nm | — |
Thickness | 10–1000 nm | — |
Thickness | 10–2000 nm | — |
Thickness | 10–5000 nm | — |
Thickness | 50–100 nm | — |
Thickness | 50–500 nm | — |
Thickness | 50–1000 nm | — |
Thickness | 50–2000 nm | — |
Thickness | 20–5000 nm | — |
Thickness | 100–500 nm | — |
Thickness | 100–2000 nm | — |
Thickness | 100–5000 nm | — |
Thickness | 1–5 µm | — |
Thickness | 100–10000 nm | — |
Thickness | 100–20000 nm | — |
Thickness | 100–30000 nm | — |
Thickness | 100–40000 nm | — |
Thickness | 10–15 µm | — |
Thickness | 1–20 µm | — |
Thickness | 1–30 µm | — |
Thickness | 1–40 µm | — |
Thickness | 5–10 µm | — |
Thickness | 5–20 µm | — |
Thickness | 5–40 µm | — |
Thickness | 10–20 µm | — |
Thickness | 10–30 µm | — |
Thickness | 10–40 µm | — |
Thickness | 15–20 µm | — |
Thickness | 20–30 µm | — |
Thickness | 15–40 µm | — |
Thickness | 20–40 µm | — |
Thickness | 30–40 µm | — |
Thickness | 500–1000 µm | — |
Thickness | 500000–5000000 nm | — |
Thickness | 500000–10000000 nm | — |
Thickness | 5000–20000000 nm | — |
Thickness | 500000–50000000 nm | — |
Thickness | 500000–100000000 nm | — |
Thickness | 1–2 cm | — |
Thickness | 1–5 cm | — |
Thickness | 1–10 cm | — |
Thickness | 2–10 cm | — |
Thickness | 5–10 cm | — |
Thickness | 10–200 nm | — |
Thickness | 10–300 nm | — |
Thickness | 50–200 nm | — |
Thickness | 50–300 nm | — |
Voltage | 1–10 V | — |
Voltage | 1–20 V | — |
Voltage | 1–100 V | — |
Voltage | 1–200 V | — |
Voltage | 1–500 V | — |
Voltage | 10–50 V | — |
Voltage | 10–100 V | — |
Voltage | 10–200 V | — |
Voltage | 10–500 V | — |
Voltage | 50–100 V | — |
Voltage | 50–200 V | — |
Voltage | 50–500 V | — |
Voltage | 100–200 V | — |
Voltage | 100–500 V | — |
Voltage | 0.1–0.5 V | — |
Voltage | 0.1–1 V | — |
Voltage | 0.1–2 V | — |
Voltage | 0.1–5 V | — |
Voltage | 0.1–10 V | — |
Voltage | 0.5–1 V | — |
Voltage | 0.5–2 V | — |
Voltage | 0.5–5 V | — |
Voltage | 0.5–10 V | — |
Temperature | ≤ 60 °C | — |
Thickness | ≥ 1 nm | — |
Thickness | ≥ 200 nm | — |
Thickness | ≥ 300 nm | — |
Thickness | ≥ 390 nm | — |
Thickness | ≥ 400 nm | — |
Thickness | ≥ 450 nm | — |
Thickness | ≥ 500 nm | — |
Thickness | ≥ 550 nm | — |
Thickness | ≥ 600 nm | — |
Thickness | ≥ 650 nm | — |
Thickness | ≥ 740 nm | — |
Thickness | ≥ 800 nm | — |
Thickness | ≥ 900 nm | — |
Thickness | ≥ 1 µm | — |
Thickness | ≥ 10 nm | — |
Thickness | ≥ 20 nm | — |
Thickness | ≥ 50 nm | — |
Thickness | ≥ 10000 cm | — |
Thickness | ≥ 15000 cm | — |
Thickness | ≥ 20000 cm | — |
Thickness | ≥ 100000 cm | — |
Temperature | ≥ 60 °C | — |
Thickness | ≥ 0.2 nm | — |
Thickness | ≥ 0.5 nm | — |
Thickness | ≥ 2 nm | — |
Thickness | ≥ 5 nm | — |
Thickness | ≥ 5 µm | — |
Thickness | ≥ 2 µm | — |
Thickness | ≥ 15 µm | — |
Thickness | ≥ 20 µm | — |
Thickness | ≥ 25 µm | — |
Thickness | ≥ 30 µm | — |
Thickness | ≥ 35 µm | — |
Thickness | ≥ 40 µm | — |
Thickness | ≥ 500 µm | — |
Thickness | ≥ 0.5 cm | — |
Thickness | ≥ 1 cm | — |
Thickness | ≥ 2 cm | — |
Thickness | ≥ 5 cm | — |
Thickness | ≥ 10 cm | — |
Voltage | ≥ 1 V | — |
Voltage | ≥ 5 V | — |
Voltage | ≥ 10 V | — |
Voltage | ≥ 20 V | — |
Voltage | ≥ 50 V | — |
Voltage | ≥ 150 V | — |
Voltage | ≥ 200 V | — |
Voltage | ≥ 500 V | — |
Voltage | ≥ 0.1 V | — |
Voltage | ≥ 0.2 V | — |
Voltage | ≥ 0.5 V | — |
Voltage | ≥ 2 V | — |
