Patent
US 11,059,741porous three-dimensional construction coating layer
fused silica
SiO₂
glass
copper
Cu
FIGS. 2A-2C are Raman spectra from graphene coated on Cu/SiO 2 substrates by chemical vapour deposition (C VD) at growing temperatures (temperature of the …
FIG. 3 depicts a Raman spectrum from graphene C VD coated on a Cu/SiO 2 substrate at growing temperature of 9 00°C, and subsequently heated in vacuum to 1100 …
FIG. 4 depicts a Raman spectrum of graphene grown at 1000 0C with C 2 H 2 and H 2 mixed gas present to improve the graphene coating quality. [0020]
FIGS. 5A-5D present SEM images of a three dimensional graphene structure formed by C VD at 1000 0C for 30 minutes with 0.2 Torr 1:1 ratio of C 2 H 2/H 2 on a …
FIG. 6 B) SEM images at 100,000 x of a porous graphene film coated on Cu/SiO 2 at 900 0C with 0.1 Torr C 2 H 2 for 30 minutes and then heated to 1100 0C in …
FIGS. 8A-8D present SEM images of deposited copper nanoparticles in porous fused Si O 2 at 5, 000 x (
FIG. 9 depicts SEM images of hollow graphene structures made by C VD at 900 0 C at 50, 000 x (
three-dimensional graphene structure (porous, hollow-core, spherical) |
article transmittance at 550 nm (claim 60) | 40–80 | three-dimensional graphene structure (porous, hollow-core, spherical) |
coating absorbance at 550 nm (claim 58) | 2.3–40 | three-dimensional graphene structure (porous, hollow-core, spherical) |
coating sheet resistance (claim 60) | 1500–10000 | three-dimensional graphene structure (porous, hollow-core, spherical) |
Thickness | 100–400 nm | — |
Pressure | 0.1–0.5 Torr | — |
Thickness | 5–1000 nm | — |
Thickness | 10–500 nm | — |
Thickness | 20–500 nm | — |
Thickness | 50–500 nm | — |
Thickness | 20–400 nm | — |
Thickness | 50–400 nm | — |
Thickness | 50–250 nm | — |
Thickness | 20–250 nm | — |
Thickness | 100–500 nm | — |
Thickness | 0.1–2.5 mm | — |
Thickness | 0.3–2 mm | — |
Thickness | 0.7–1.5 mm | — |
Thickness | 1–1.2 mm | — |
Flow Rate | 2–18 sccm | — |
Flow Rate | 3–15 sccm | — |
Flow Rate | 4–12 sccm | — |
Flow Rate | 5–10 sccm | — |
Flow Rate | 6–8 sccm | — |
Flow Rate | 1–35 sccm | — |
Flow Rate | 5–30 sccm | — |
Flow Rate | 10–25 sccm | — |
Flow Rate | 15–20 sccm | — |
Duration | 1–10 minutes | — |
Duration | 2–8 minutes | — |
Duration | 3–6 minutes | — |
Duration | 4–5 minutes | — |
Temperature | 0–125 °C | — |
Temperature | 75–95 °C | — |
— | 400–2500 W | — |
Pressure | 4–100 Torr | — |
Flow Rate | 0–40 sccm | — |
Thickness | 400–700 nm | — |
Temperature | 500–1000 °C | — |
Temperature | ≤ 1 K | — |
Temperature | ≤ 90 K | — |
Temperature | ≤ 80 K | — |
Temperature | ≤ 70 K | — |
Temperature | ≤ 60 K | — |
Temperature | ≤ 50 K | — |
Temperature | ≤ 40 K | — |
Temperature | ≤ 30 K | — |
Temperature | ≤ 20 K | — |
Temperature | ≤ 10 K | — |
Thickness | ≤ 2 nm | — |
Thickness | 20–800 nm | — |
Thickness | ≤ 1 nm | — |
Thickness | ≥ 5 nm | — |
Thickness | ≥ 1 nm | — |
Thickness | 30–500 nm | — |
Thickness | 5–500 nm | — |
porous three-dimensional construction coating layer
fused silica
SiO₂
glass
copper
Cu
FIGS. 2A-2C are Raman spectra from graphene coated on Cu/SiO 2 substrates by chemical vapour deposition (C VD) at growing temperatures (temperature of the …
FIG. 3 depicts a Raman spectrum from graphene C VD coated on a Cu/SiO 2 substrate at growing temperature of 9 00°C, and subsequently heated in vacuum to 1100 …
FIG. 4 depicts a Raman spectrum of graphene grown at 1000 0C with C 2 H 2 and H 2 mixed gas present to improve the graphene coating quality. [0020]
FIGS. 5A-5D present SEM images of a three dimensional graphene structure formed by C VD at 1000 0C for 30 minutes with 0.2 Torr 1:1 ratio of C 2 H 2/H 2 on a …
FIG. 6 B) SEM images at 100,000 x of a porous graphene film coated on Cu/SiO 2 at 900 0C with 0.1 Torr C 2 H 2 for 30 minutes and then heated to 1100 0C in …
FIGS. 8A-8D present SEM images of deposited copper nanoparticles in porous fused Si O 2 at 5, 000 x (
FIG. 9 depicts SEM images of hollow graphene structures made by C VD at 900 0 C at 50, 000 x (
three-dimensional graphene structure (porous, hollow-core, spherical) |
article transmittance at 550 nm (claim 60) | 40–80 | three-dimensional graphene structure (porous, hollow-core, spherical) |
coating absorbance at 550 nm (claim 58) | 2.3–40 | three-dimensional graphene structure (porous, hollow-core, spherical) |
coating sheet resistance (claim 60) | 1500–10000 | three-dimensional graphene structure (porous, hollow-core, spherical) |
Thickness | 100–400 nm | — |
Pressure | 0.1–0.5 Torr | — |
Thickness | 5–1000 nm | — |
Thickness | 10–500 nm | — |
Thickness | 20–500 nm | — |
Thickness | 50–500 nm | — |
Thickness | 20–400 nm | — |
Thickness | 50–400 nm | — |
Thickness | 50–250 nm | — |
Thickness | 20–250 nm | — |
Thickness | 100–500 nm | — |
Thickness | 0.1–2.5 mm | — |
Thickness | 0.3–2 mm | — |
Thickness | 0.7–1.5 mm | — |
Thickness | 1–1.2 mm | — |
Flow Rate | 2–18 sccm | — |
Flow Rate | 3–15 sccm | — |
Flow Rate | 4–12 sccm | — |
Flow Rate | 5–10 sccm | — |
Flow Rate | 6–8 sccm | — |
Flow Rate | 1–35 sccm | — |
Flow Rate | 5–30 sccm | — |
Flow Rate | 10–25 sccm | — |
Flow Rate | 15–20 sccm | — |
Duration | 1–10 minutes | — |
Duration | 2–8 minutes | — |
Duration | 3–6 minutes | — |
Duration | 4–5 minutes | — |
Temperature | 0–125 °C | — |
Temperature | 75–95 °C | — |
— | 400–2500 W | — |
Pressure | 4–100 Torr | — |
Flow Rate | 0–40 sccm | — |
Thickness | 400–700 nm | — |
Temperature | 500–1000 °C | — |
Temperature | ≤ 1 K | — |
Temperature | ≤ 90 K | — |
Temperature | ≤ 80 K | — |
Temperature | ≤ 70 K | — |
Temperature | ≤ 60 K | — |
Temperature | ≤ 50 K | — |
Temperature | ≤ 40 K | — |
Temperature | ≤ 30 K | — |
Temperature | ≤ 20 K | — |
Temperature | ≤ 10 K | — |
Thickness | ≤ 2 nm | — |
Thickness | 20–800 nm | — |
Thickness | ≤ 1 nm | — |
Thickness | ≥ 5 nm | — |
Thickness | ≥ 1 nm | — |
Thickness | 30–500 nm | — |
Thickness | 5–500 nm | — |
porous three-dimensional construction coating layer
fused silica
SiO₂
glass
copper
Cu
FIGS. 2A-2C are Raman spectra from graphene coated on Cu/SiO 2 substrates by chemical vapour deposition (C VD) at growing temperatures (temperature of the …
FIG. 3 depicts a Raman spectrum from graphene C VD coated on a Cu/SiO 2 substrate at growing temperature of 9 00°C, and subsequently heated in vacuum to 1100 …
FIG. 4 depicts a Raman spectrum of graphene grown at 1000 0C with C 2 H 2 and H 2 mixed gas present to improve the graphene coating quality. [0020]
FIGS. 5A-5D present SEM images of a three dimensional graphene structure formed by C VD at 1000 0C for 30 minutes with 0.2 Torr 1:1 ratio of C 2 H 2/H 2 on a …
FIG. 6 B) SEM images at 100,000 x of a porous graphene film coated on Cu/SiO 2 at 900 0C with 0.1 Torr C 2 H 2 for 30 minutes and then heated to 1100 0C in …
FIGS. 8A-8D present SEM images of deposited copper nanoparticles in porous fused Si O 2 at 5, 000 x (
FIG. 9 depicts SEM images of hollow graphene structures made by C VD at 900 0 C at 50, 000 x (
three-dimensional graphene structure (porous, hollow-core, spherical) |
article transmittance at 550 nm (claim 60) | 40–80 | three-dimensional graphene structure (porous, hollow-core, spherical) |
coating absorbance at 550 nm (claim 58) | 2.3–40 | three-dimensional graphene structure (porous, hollow-core, spherical) |
coating sheet resistance (claim 60) | 1500–10000 | three-dimensional graphene structure (porous, hollow-core, spherical) |
Thickness | 100–400 nm | — |
Pressure | 0.1–0.5 Torr | — |
Thickness | 5–1000 nm | — |
Thickness | 10–500 nm | — |
Thickness | 20–500 nm | — |
Thickness | 50–500 nm | — |
Thickness | 20–400 nm | — |
Thickness | 50–400 nm | — |
Thickness | 50–250 nm | — |
Thickness | 20–250 nm | — |
Thickness | 100–500 nm | — |
Thickness | 0.1–2.5 mm | — |
Thickness | 0.3–2 mm | — |
Thickness | 0.7–1.5 mm | — |
Thickness | 1–1.2 mm | — |
Flow Rate | 2–18 sccm | — |
Flow Rate | 3–15 sccm | — |
Flow Rate | 4–12 sccm | — |
Flow Rate | 5–10 sccm | — |
Flow Rate | 6–8 sccm | — |
Flow Rate | 1–35 sccm | — |
Flow Rate | 5–30 sccm | — |
Flow Rate | 10–25 sccm | — |
Flow Rate | 15–20 sccm | — |
Duration | 1–10 minutes | — |
Duration | 2–8 minutes | — |
Duration | 3–6 minutes | — |
Duration | 4–5 minutes | — |
Temperature | 0–125 °C | — |
Temperature | 75–95 °C | — |
— | 400–2500 W | — |
Pressure | 4–100 Torr | — |
Flow Rate | 0–40 sccm | — |
Thickness | 400–700 nm | — |
Temperature | 500–1000 °C | — |
Temperature | ≤ 1 K | — |
Temperature | ≤ 90 K | — |
Temperature | ≤ 80 K | — |
Temperature | ≤ 70 K | — |
Temperature | ≤ 60 K | — |
Temperature | ≤ 50 K | — |
Temperature | ≤ 40 K | — |
Temperature | ≤ 30 K | — |
Temperature | ≤ 20 K | — |
Temperature | ≤ 10 K | — |
Thickness | ≤ 2 nm | — |
Thickness | 20–800 nm | — |
Thickness | ≤ 1 nm | — |
Thickness | ≥ 5 nm | — |
Thickness | ≥ 1 nm | — |
Thickness | 30–500 nm | — |
Thickness | 5–500 nm | — |
porous three-dimensional construction coating layer
fused silica
SiO₂
glass
copper
Cu
FIGS. 2A-2C are Raman spectra from graphene coated on Cu/SiO 2 substrates by chemical vapour deposition (C VD) at growing temperatures (temperature of the …
FIG. 3 depicts a Raman spectrum from graphene C VD coated on a Cu/SiO 2 substrate at growing temperature of 9 00°C, and subsequently heated in vacuum to 1100 …
FIG. 4 depicts a Raman spectrum of graphene grown at 1000 0C with C 2 H 2 and H 2 mixed gas present to improve the graphene coating quality. [0020]
FIGS. 5A-5D present SEM images of a three dimensional graphene structure formed by C VD at 1000 0C for 30 minutes with 0.2 Torr 1:1 ratio of C 2 H 2/H 2 on a …
FIG. 6 B) SEM images at 100,000 x of a porous graphene film coated on Cu/SiO 2 at 900 0C with 0.1 Torr C 2 H 2 for 30 minutes and then heated to 1100 0C in …
FIGS. 8A-8D present SEM images of deposited copper nanoparticles in porous fused Si O 2 at 5, 000 x (
FIG. 9 depicts SEM images of hollow graphene structures made by C VD at 900 0 C at 50, 000 x (
three-dimensional graphene structure (porous, hollow-core, spherical) |
article transmittance at 550 nm (claim 60) | 40–80 | three-dimensional graphene structure (porous, hollow-core, spherical) |
coating absorbance at 550 nm (claim 58) | 2.3–40 | three-dimensional graphene structure (porous, hollow-core, spherical) |
coating sheet resistance (claim 60) | 1500–10000 | three-dimensional graphene structure (porous, hollow-core, spherical) |
Thickness | 100–400 nm | — |
Pressure | 0.1–0.5 Torr | — |
Thickness | 5–1000 nm | — |
Thickness | 10–500 nm | — |
Thickness | 20–500 nm | — |
Thickness | 50–500 nm | — |
Thickness | 20–400 nm | — |
Thickness | 50–400 nm | — |
Thickness | 50–250 nm | — |
Thickness | 20–250 nm | — |
Thickness | 100–500 nm | — |
Thickness | 0.1–2.5 mm | — |
Thickness | 0.3–2 mm | — |
Thickness | 0.7–1.5 mm | — |
Thickness | 1–1.2 mm | — |
Flow Rate | 2–18 sccm | — |
Flow Rate | 3–15 sccm | — |
Flow Rate | 4–12 sccm | — |
Flow Rate | 5–10 sccm | — |
Flow Rate | 6–8 sccm | — |
Flow Rate | 1–35 sccm | — |
Flow Rate | 5–30 sccm | — |
Flow Rate | 10–25 sccm | — |
Flow Rate | 15–20 sccm | — |
Duration | 1–10 minutes | — |
Duration | 2–8 minutes | — |
Duration | 3–6 minutes | — |
Duration | 4–5 minutes | — |
Temperature | 0–125 °C | — |
Temperature | 75–95 °C | — |
— | 400–2500 W | — |
Pressure | 4–100 Torr | — |
Flow Rate | 0–40 sccm | — |
Thickness | 400–700 nm | — |
Temperature | 500–1000 °C | — |
Temperature | ≤ 1 K | — |
Temperature | ≤ 90 K | — |
Temperature | ≤ 80 K | — |
Temperature | ≤ 70 K | — |
Temperature | ≤ 60 K | — |
Temperature | ≤ 50 K | — |
Temperature | ≤ 40 K | — |
Temperature | ≤ 30 K | — |
Temperature | ≤ 20 K | — |
Temperature | ≤ 10 K | — |
Thickness | ≤ 2 nm | — |
Thickness | 20–800 nm | — |
Thickness | ≤ 1 nm | — |
Thickness | ≥ 5 nm | — |
Thickness | ≥ 1 nm | — |
Thickness | 30–500 nm | — |
Thickness | 5–500 nm | — |