Patent
US 9,053,932METHODS OF PREPARING GRAPHENE AND DEVICE INCLUDING GRAPHENE
Dong Wook LEE
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,053,932Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 A to 1 E illustrate a method of preparing graphene according to example embodiments; [20]
FIG. 2 illustrates a result of Raman spectroscopic analysis of a product according to example embodiments; [21]
FIG. 3 illustrates a result of X-ray photoelectron spectroscopic (XPS) analysis of a product according to example embodiments; and [22]
FIG. 4 illustrates a schematic diagram of a field effect transistor (FET) including substrate type graphene.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of preparing graphene comprising: forming a silicon carbide thin film on a substrate; forming a metal thin film on the silicon carbide thin film; and forming a metal silicide e empeei te-layer and graphene on the substrate by heating the silicon carbide thin film and the metal thin film, wherein the forming a metal silicide la y er and graphene includes heating the silicon carbide thin film and the metal thin film at a temperature between 1000 0C and 1100 * C in a vacuum state in the range of 10-4 to 10 -3 Torr, and wherein the metal thin film includes at least one of palladium (Pd) and manganese (Mn).
The method according to claim 1, wherein the forming graphene forms the graphene between the substrate and the metal si l icide eempeete- layer. currently amended
The method according to claim 1, wherein the forming a metal silicide ee mpe4i e-layer and graphene includes heating the silicon carbide thin film and the metal thin film for a beat- 0.5 hour to about- 2 hours. SVG 13917786.10-02-2014.I₁₂₀GZN₀PXXIFW4.CLM32002111.1.127.141.2288.291.svg 0.5 7.203 Graph Black and white currently amended
The method according to claim 1, wherein the forming a silicon carbide thin film forms one of a polycrystalline silicon carbide thin film and an amorphous silicon carbide thin film.
The method according to claim 1, wherein the substrate is formed of an insulation material.
The method according to claim 1, wherein the substrate is formed of an oxide.
The method according to claim 1, wherein the substrate includes at least one of sapphire (A 12O₃), lanthanum aluminate (LaA lO₃) and strontium titanium oxide (SrTiO 3).
The method according to claim 1, wherein the forming graphene includes forming the graphene having a D-peak, a G-peak and a 2D-peak.
The method according to claim 1, wherein the forming a metal thin film forms the metal thin film to have a same thickness as the silicon carbide thin film. SVG 13917786.10-02-2014.I₁₂₀GZN₀PXXIFW4.CLM32002112.1.123.141.2287.291.svg 0.5 7.213 Graph Black and white
The method according to claim 1, wherein the forming a metal s il icide eemposite- layer includes bonding silicon of the silicon carbide thin film and a metal of the metal thin film.
The method according to claim 1, wherein the forming a graphene includes bonding carbons of the silicon carbide thin film.
The method according to claim 1, further SVG 13917786.10-02-2014.I₁₂₀GZN₀PXXIFW4.CLM32002112.16.230.1848.555.1903.svg 0.183 1.083 Graph Black and white removing the metal s il icide e empet e-layer.
A method of fabricating a device, the method comprising: forming a device including graphene on a substrate by preparing the graphene in accordance with claim 1.
. canceled
. canceled
canceled
canceled
A method of preparing graphene comprising graphene on an insulation substrate by heating a temperature between 1000 °C and 1100 0C in a in-a vacmm eta te. *** END CLAIM LISTING *** 0.5 7.223 the forming a device includes forming one of a forming a metal s il icide e empeest e-layer and silicon carbide thin film and a metal thin film at vacuum state in the range of 10- 4 to 10- 3 Torr
Layer stacks claimed or described, ordered top of device to substrate.
device including graphene
Materials described outside the worked examples.
graphene
silicon carbide thin film
SiC
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 illustrates a result of Raman spectroscopic analysis of a product according to example embodiments; [21]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 1–10 mm | — |
Thickness | 1–10 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,053,932Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 A to 1 E illustrate a method of preparing graphene according to example embodiments; [20]
FIG. 2 illustrates a result of Raman spectroscopic analysis of a product according to example embodiments; [21]
FIG. 3 illustrates a result of X-ray photoelectron spectroscopic (XPS) analysis of a product according to example embodiments; and [22]
FIG. 4 illustrates a schematic diagram of a field effect transistor (FET) including substrate type graphene.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of preparing graphene comprising: forming a silicon carbide thin film on a substrate; forming a metal thin film on the silicon carbide thin film; and forming a metal silicide e empeei te-layer and graphene on the substrate by heating the silicon carbide thin film and the metal thin film, wherein the forming a metal silicide la y er and graphene includes heating the silicon carbide thin film and the metal thin film at a temperature between 1000 0C and 1100 * C in a vacuum state in the range of 10-4 to 10 -3 Torr, and wherein the metal thin film includes at least one of palladium (Pd) and manganese (Mn).
The method according to claim 1, wherein the forming graphene forms the graphene between the substrate and the metal si l icide eempeete- layer. currently amended
The method according to claim 1, wherein the forming a metal silicide ee mpe4i e-layer and graphene includes heating the silicon carbide thin film and the metal thin film for a beat- 0.5 hour to about- 2 hours. SVG 13917786.10-02-2014.I₁₂₀GZN₀PXXIFW4.CLM32002111.1.127.141.2288.291.svg 0.5 7.203 Graph Black and white currently amended
The method according to claim 1, wherein the forming a silicon carbide thin film forms one of a polycrystalline silicon carbide thin film and an amorphous silicon carbide thin film.
The method according to claim 1, wherein the substrate is formed of an insulation material.
The method according to claim 1, wherein the substrate is formed of an oxide.
The method according to claim 1, wherein the substrate includes at least one of sapphire (A 12O₃), lanthanum aluminate (LaA lO₃) and strontium titanium oxide (SrTiO 3).
The method according to claim 1, wherein the forming graphene includes forming the graphene having a D-peak, a G-peak and a 2D-peak.
The method according to claim 1, wherein the forming a metal thin film forms the metal thin film to have a same thickness as the silicon carbide thin film. SVG 13917786.10-02-2014.I₁₂₀GZN₀PXXIFW4.CLM32002112.1.123.141.2287.291.svg 0.5 7.213 Graph Black and white
The method according to claim 1, wherein the forming a metal s il icide eemposite- layer includes bonding silicon of the silicon carbide thin film and a metal of the metal thin film.
The method according to claim 1, wherein the forming a graphene includes bonding carbons of the silicon carbide thin film.
The method according to claim 1, further SVG 13917786.10-02-2014.I₁₂₀GZN₀PXXIFW4.CLM32002112.16.230.1848.555.1903.svg 0.183 1.083 Graph Black and white removing the metal s il icide e empet e-layer.
A method of fabricating a device, the method comprising: forming a device including graphene on a substrate by preparing the graphene in accordance with claim 1.
. canceled
. canceled
canceled
canceled
A method of preparing graphene comprising graphene on an insulation substrate by heating a temperature between 1000 °C and 1100 0C in a in-a vacmm eta te. *** END CLAIM LISTING *** 0.5 7.223 the forming a device includes forming one of a forming a metal s il icide e empeest e-layer and silicon carbide thin film and a metal thin film at vacuum state in the range of 10- 4 to 10- 3 Torr
Layer stacks claimed or described, ordered top of device to substrate.
device including graphene
Materials described outside the worked examples.
graphene
silicon carbide thin film
SiC
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 illustrates a result of Raman spectroscopic analysis of a product according to example embodiments; [21]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 1–10 mm | — |
Thickness | 1–10 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,053,932Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 A to 1 E illustrate a method of preparing graphene according to example embodiments; [20]
FIG. 2 illustrates a result of Raman spectroscopic analysis of a product according to example embodiments; [21]
FIG. 3 illustrates a result of X-ray photoelectron spectroscopic (XPS) analysis of a product according to example embodiments; and [22]
FIG. 4 illustrates a schematic diagram of a field effect transistor (FET) including substrate type graphene.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of preparing graphene comprising: forming a silicon carbide thin film on a substrate; forming a metal thin film on the silicon carbide thin film; and forming a metal silicide e empeei te-layer and graphene on the substrate by heating the silicon carbide thin film and the metal thin film, wherein the forming a metal silicide la y er and graphene includes heating the silicon carbide thin film and the metal thin film at a temperature between 1000 0C and 1100 * C in a vacuum state in the range of 10-4 to 10 -3 Torr, and wherein the metal thin film includes at least one of palladium (Pd) and manganese (Mn).
The method according to claim 1, wherein the forming graphene forms the graphene between the substrate and the metal si l icide eempeete- layer. currently amended
The method according to claim 1, wherein the forming a metal silicide ee mpe4i e-layer and graphene includes heating the silicon carbide thin film and the metal thin film for a beat- 0.5 hour to about- 2 hours. SVG 13917786.10-02-2014.I₁₂₀GZN₀PXXIFW4.CLM32002111.1.127.141.2288.291.svg 0.5 7.203 Graph Black and white currently amended
The method according to claim 1, wherein the forming a silicon carbide thin film forms one of a polycrystalline silicon carbide thin film and an amorphous silicon carbide thin film.
The method according to claim 1, wherein the substrate is formed of an insulation material.
The method according to claim 1, wherein the substrate is formed of an oxide.
The method according to claim 1, wherein the substrate includes at least one of sapphire (A 12O₃), lanthanum aluminate (LaA lO₃) and strontium titanium oxide (SrTiO 3).
The method according to claim 1, wherein the forming graphene includes forming the graphene having a D-peak, a G-peak and a 2D-peak.
The method according to claim 1, wherein the forming a metal thin film forms the metal thin film to have a same thickness as the silicon carbide thin film. SVG 13917786.10-02-2014.I₁₂₀GZN₀PXXIFW4.CLM32002112.1.123.141.2287.291.svg 0.5 7.213 Graph Black and white
The method according to claim 1, wherein the forming a metal s il icide eemposite- layer includes bonding silicon of the silicon carbide thin film and a metal of the metal thin film.
The method according to claim 1, wherein the forming a graphene includes bonding carbons of the silicon carbide thin film.
The method according to claim 1, further SVG 13917786.10-02-2014.I₁₂₀GZN₀PXXIFW4.CLM32002112.16.230.1848.555.1903.svg 0.183 1.083 Graph Black and white removing the metal s il icide e empet e-layer.
A method of fabricating a device, the method comprising: forming a device including graphene on a substrate by preparing the graphene in accordance with claim 1.
. canceled
. canceled
canceled
canceled
A method of preparing graphene comprising graphene on an insulation substrate by heating a temperature between 1000 °C and 1100 0C in a in-a vacmm eta te. *** END CLAIM LISTING *** 0.5 7.223 the forming a device includes forming one of a forming a metal s il icide e empeest e-layer and silicon carbide thin film and a metal thin film at vacuum state in the range of 10- 4 to 10- 3 Torr
Layer stacks claimed or described, ordered top of device to substrate.
device including graphene
Materials described outside the worked examples.
graphene
silicon carbide thin film
SiC
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 illustrates a result of Raman spectroscopic analysis of a product according to example embodiments; [21]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 1–10 mm | — |
Thickness | 1–10 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,053,932Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 A to 1 E illustrate a method of preparing graphene according to example embodiments; [20]
FIG. 2 illustrates a result of Raman spectroscopic analysis of a product according to example embodiments; [21]
FIG. 3 illustrates a result of X-ray photoelectron spectroscopic (XPS) analysis of a product according to example embodiments; and [22]
FIG. 4 illustrates a schematic diagram of a field effect transistor (FET) including substrate type graphene.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of preparing graphene comprising: forming a silicon carbide thin film on a substrate; forming a metal thin film on the silicon carbide thin film; and forming a metal silicide e empeei te-layer and graphene on the substrate by heating the silicon carbide thin film and the metal thin film, wherein the forming a metal silicide la y er and graphene includes heating the silicon carbide thin film and the metal thin film at a temperature between 1000 0C and 1100 * C in a vacuum state in the range of 10-4 to 10 -3 Torr, and wherein the metal thin film includes at least one of palladium (Pd) and manganese (Mn).
The method according to claim 1, wherein the forming graphene forms the graphene between the substrate and the metal si l icide eempeete- layer. currently amended
The method according to claim 1, wherein the forming a metal silicide ee mpe4i e-layer and graphene includes heating the silicon carbide thin film and the metal thin film for a beat- 0.5 hour to about- 2 hours. SVG 13917786.10-02-2014.I₁₂₀GZN₀PXXIFW4.CLM32002111.1.127.141.2288.291.svg 0.5 7.203 Graph Black and white currently amended
The method according to claim 1, wherein the forming a silicon carbide thin film forms one of a polycrystalline silicon carbide thin film and an amorphous silicon carbide thin film.
The method according to claim 1, wherein the substrate is formed of an insulation material.
The method according to claim 1, wherein the substrate is formed of an oxide.
The method according to claim 1, wherein the substrate includes at least one of sapphire (A 12O₃), lanthanum aluminate (LaA lO₃) and strontium titanium oxide (SrTiO 3).
The method according to claim 1, wherein the forming graphene includes forming the graphene having a D-peak, a G-peak and a 2D-peak.
The method according to claim 1, wherein the forming a metal thin film forms the metal thin film to have a same thickness as the silicon carbide thin film. SVG 13917786.10-02-2014.I₁₂₀GZN₀PXXIFW4.CLM32002112.1.123.141.2287.291.svg 0.5 7.213 Graph Black and white
The method according to claim 1, wherein the forming a metal s il icide eemposite- layer includes bonding silicon of the silicon carbide thin film and a metal of the metal thin film.
The method according to claim 1, wherein the forming a graphene includes bonding carbons of the silicon carbide thin film.
The method according to claim 1, further SVG 13917786.10-02-2014.I₁₂₀GZN₀PXXIFW4.CLM32002112.16.230.1848.555.1903.svg 0.183 1.083 Graph Black and white removing the metal s il icide e empet e-layer.
A method of fabricating a device, the method comprising: forming a device including graphene on a substrate by preparing the graphene in accordance with claim 1.
. canceled
. canceled
canceled
canceled
A method of preparing graphene comprising graphene on an insulation substrate by heating a temperature between 1000 °C and 1100 0C in a in-a vacmm eta te. *** END CLAIM LISTING *** 0.5 7.223 the forming a device includes forming one of a forming a metal s il icide e empeest e-layer and silicon carbide thin film and a metal thin film at vacuum state in the range of 10- 4 to 10- 3 Torr
Layer stacks claimed or described, ordered top of device to substrate.
device including graphene
Materials described outside the worked examples.
graphene
silicon carbide thin film
SiC
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 illustrates a result of Raman spectroscopic analysis of a product according to example embodiments; [21]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 1–10 mm | — |
Thickness | 1–10 nm |
Related documents with shared materials, methods, properties, or citations.
metal thin film
palladium
Pd
manganese
Mn
copper
Cu
iron
Fe
metal silicide layer
insulation substrate
sapphire
Al₂O₃
lanthanum aluminate
LaAlO₃
strontium titanium oxide
SrTiO₃
FIG. 3 illustrates a result of X-ray photoelectron spectroscopic (XPS) analysis of a product according to example embodiments; and [22]
FIG. 4 illustrates a schematic diagram of a field effect transistor (FET) including substrate type graphene.
| — |
Temperature | 1000–1100 °C | — |
Pressure | 10.3–10.4 Torr | — |
Duration | 1800–7200 s | — |
Temperature | 950–1150 °C | — |
Thickness | 0.5–50 nm | — |
Thickness | 4–400 nm | — |
Thickness | 0.1–30 nm | — |
Thickness | 0.3–20 nm | — |
Temperature | ≥ 1150 °C | — |
Pressure | 0.001 Torr | — |
Duration | 0.5–2 hours | — |
metal thin film
palladium
Pd
manganese
Mn
copper
Cu
iron
Fe
metal silicide layer
insulation substrate
sapphire
Al₂O₃
lanthanum aluminate
LaAlO₃
strontium titanium oxide
SrTiO₃
FIG. 3 illustrates a result of X-ray photoelectron spectroscopic (XPS) analysis of a product according to example embodiments; and [22]
FIG. 4 illustrates a schematic diagram of a field effect transistor (FET) including substrate type graphene.
| — |
Temperature | 1000–1100 °C | — |
Pressure | 10.3–10.4 Torr | — |
Duration | 1800–7200 s | — |
Temperature | 950–1150 °C | — |
Thickness | 0.5–50 nm | — |
Thickness | 4–400 nm | — |
Thickness | 0.1–30 nm | — |
Thickness | 0.3–20 nm | — |
Temperature | ≥ 1150 °C | — |
Pressure | 0.001 Torr | — |
Duration | 0.5–2 hours | — |
metal thin film
palladium
Pd
manganese
Mn
copper
Cu
iron
Fe
metal silicide layer
insulation substrate
sapphire
Al₂O₃
lanthanum aluminate
LaAlO₃
strontium titanium oxide
SrTiO₃
FIG. 3 illustrates a result of X-ray photoelectron spectroscopic (XPS) analysis of a product according to example embodiments; and [22]
FIG. 4 illustrates a schematic diagram of a field effect transistor (FET) including substrate type graphene.
| — |
Temperature | 1000–1100 °C | — |
Pressure | 10.3–10.4 Torr | — |
Duration | 1800–7200 s | — |
Temperature | 950–1150 °C | — |
Thickness | 0.5–50 nm | — |
Thickness | 4–400 nm | — |
Thickness | 0.1–30 nm | — |
Thickness | 0.3–20 nm | — |
Temperature | ≥ 1150 °C | — |
Pressure | 0.001 Torr | — |
Duration | 0.5–2 hours | — |
metal thin film
palladium
Pd
manganese
Mn
copper
Cu
iron
Fe
metal silicide layer
insulation substrate
sapphire
Al₂O₃
lanthanum aluminate
LaAlO₃
strontium titanium oxide
SrTiO₃
FIG. 3 illustrates a result of X-ray photoelectron spectroscopic (XPS) analysis of a product according to example embodiments; and [22]
FIG. 4 illustrates a schematic diagram of a field effect transistor (FET) including substrate type graphene.
| — |
Temperature | 1000–1100 °C | — |
Pressure | 10.3–10.4 Torr | — |
Duration | 1800–7200 s | — |
Temperature | 950–1150 °C | — |
Thickness | 0.5–50 nm | — |
Thickness | 4–400 nm | — |
Thickness | 0.1–30 nm | — |
Thickness | 0.3–20 nm | — |
Temperature | ≥ 1150 °C | — |
Pressure | 0.001 Torr | — |
Duration | 0.5–2 hours | — |