A Symmetric Superconducting Dome Hosts Non-Fermi Liquid Behavior at Optimal Doping in MoS2

Qiao Chen; Chengyu Yan; Dino Novko; Changshuai Lan; Huiqin Jian; Yi Yan; Xinming Zhao; Yihang Li; Huai Guan; Bo Gao; Zhong Wan; Shun Wang

Paper details

Research paper

Experimental Characterization

A Symmetric Superconducting Dome Hosts Non-Fermi Liquid Behavior at Optimal Doping in MoS₂

Qiao Chen, Chengyu Yan, Dino Novko, Changshuai Lan et al.

2025·arXiv:2512.20207

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

MoS₂ flake etched into a standard Hall bar and gated with ionic liquid DEME-TFSI for electrical transport measurements.

1 preparation1 characterization8 properties4 figures

ExperimentalMoS₂Studied Material

Materials

MoS₂

Studied Material

Also known as

molybdenum disulfide

studied material

DEME-TFSI

Substrate / Dielectric

Also known as

Why these are connected

Related documents with shared materials, methods, properties, or citations.

A Symmetric Superconducting Dome Hosts Non-Fermi Liquid Behavior at Optimal Doping in MoS2 | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Source
Fet Carrier Concentration	maximum n2D	1710¹³ cm⁻²	MoS₂	MoS₂ flake etched into a standard Hall bar and gated with io	—
Fet Carrier Concentration	maximum n2D	1710¹³ cm⁻²	MoS₂	MoS₂ flake etched into a standard Hall bar and gated with io	—
Fet Carrier Concentration	optimal n2D	12.110¹³ cm⁻²	MoS₂	MoS₂ flake etched into a standard Hall bar and gated with io	—
Fet Carrier Concentration	nc (underdoped side)	6.5710¹³ cm⁻²	MoS₂	MoS₂ flake etched into a standard Hall bar and gated with io	—
Fet Carrier Concentration	nc (overdoped side)	17.9110¹³ cm⁻²	MoS₂	MoS₂ flake etched into a standard Hall bar and gated with io	—
Fet Threshold Voltage	Tc power-law exponent	0.52	MoS₂	MoS₂ flake etched into a standard Hall bar and gated with io	—
Fet Threshold Voltage	Tc/TF at optimal doping	0.006	MoS₂	MoS₂ flake etched into a standard Hall bar and gated with io	—
Fet Carrier Concentration	non-Fermi-liquid alpha near optimal doping	1	MoS₂	MoS₂ flake etched into a standard Hall bar and gated with io	—

Properties

Type	Label	Value	Material	Sample	Source
Fet Carrier Concentration	maximum n2D	1710¹³ cm⁻²	MoS₂	MoS₂ flake etched into a standard Hall bar and gated with io	—
Fet Carrier Concentration	maximum n2D	1710¹³ cm⁻²	MoS₂	MoS₂ flake etched into a standard Hall bar and gated with io	—
Fet Carrier Concentration	optimal n2D	12.110¹³ cm⁻²	MoS₂	MoS₂ flake etched into a standard Hall bar and gated with io	—
Fet Carrier Concentration	nc (underdoped side)	6.5710¹³ cm⁻²	MoS₂	MoS₂ flake etched into a standard Hall bar and gated with io	—
Fet Carrier Concentration	nc (overdoped side)	17.9110¹³ cm⁻²	MoS₂	MoS₂ flake etched into a standard Hall bar and gated with io	—
Fet Threshold Voltage	Tc power-law exponent	0.52	MoS₂	MoS₂ flake etched into a standard Hall bar and gated with io	—
Fet Threshold Voltage	Tc/TF at optimal doping	0.006	MoS₂	MoS₂ flake etched into a standard Hall bar and gated with io	—
Fet Carrier Concentration	non-Fermi-liquid alpha near optimal doping	1	MoS₂	MoS₂ flake etched into a standard Hall bar and gated with io	—

Properties

Type	Label	Value	Material	Sample	Source
Fet Carrier Concentration	maximum n2D	1710¹³ cm⁻²	MoS₂	MoS₂ flake etched into a standard Hall bar and gated with io	—
Fet Carrier Concentration	maximum n2D	1710¹³ cm⁻²	MoS₂	MoS₂ flake etched into a standard Hall bar and gated with io	—
Fet Carrier Concentration	optimal n2D	12.110¹³ cm⁻²	MoS₂	MoS₂ flake etched into a standard Hall bar and gated with io	—
Fet Carrier Concentration	nc (underdoped side)	6.5710¹³ cm⁻²	MoS₂	MoS₂ flake etched into a standard Hall bar and gated with io	—
Fet Carrier Concentration	nc (overdoped side)	17.9110¹³ cm⁻²	MoS₂	MoS₂ flake etched into a standard Hall bar and gated with io	—
Fet Threshold Voltage	Tc power-law exponent	0.52	MoS₂	MoS₂ flake etched into a standard Hall bar and gated with io	—
Fet Threshold Voltage	Tc/TF at optimal doping	0.006	MoS₂	MoS₂ flake etched into a standard Hall bar and gated with io	—
Fet Carrier Concentration	non-Fermi-liquid alpha near optimal doping	1	MoS₂	MoS₂ flake etched into a standard Hall bar and gated with io	—

Properties

Type	Label	Value	Material	Sample	Source
Fet Carrier Concentration	maximum n2D	1710¹³ cm⁻²	MoS₂	MoS₂ flake etched into a standard Hall bar and gated with io	—
Fet Carrier Concentration	maximum n2D	1710¹³ cm⁻²	MoS₂	MoS₂ flake etched into a standard Hall bar and gated with io	—
Fet Carrier Concentration	optimal n2D	12.110¹³ cm⁻²	MoS₂	MoS₂ flake etched into a standard Hall bar and gated with io	—
Fet Carrier Concentration	nc (underdoped side)	6.5710¹³ cm⁻²	MoS₂	MoS₂ flake etched into a standard Hall bar and gated with io	—
Fet Carrier Concentration	nc (overdoped side)	17.9110¹³ cm⁻²	MoS₂	MoS₂ flake etched into a standard Hall bar and gated with io	—
Fet Threshold Voltage	Tc power-law exponent	0.52	MoS₂	MoS₂ flake etched into a standard Hall bar and gated with io	—
Fet Threshold Voltage	Tc/TF at optimal doping	0.006	MoS₂	MoS₂ flake etched into a standard Hall bar and gated with io	—
Fet Carrier Concentration	non-Fermi-liquid alpha near optimal doping	1	MoS₂	MoS₂ flake etched into a standard Hall bar and gated with io	—

A Symmetric Superconducting Dome Hosts Non-Fermi Liquid Behavior at Optimal Doping in MoS₂

Samples

MoS₂ flake etched into a standard Hall bar and gated with ionic liquid DEME-TFSI for electrical transport measurements.

Materials

Why these are connected

A Symmetric Superconducting Dome Hosts Non-Fermi Liquid Behavior at Optimal Doping in MoS₂

Samples

MoS₂ flake etched into a standard Hall bar and gated with ionic liquid DEME-TFSI for electrical transport measurements.

Materials

Why these are connected

A Symmetric Superconducting Dome Hosts Non-Fermi Liquid Behavior at Optimal Doping in MoS₂

Samples

MoS₂ flake etched into a standard Hall bar and gated with ionic liquid DEME-TFSI for electrical transport measurements.

Materials

Why these are connected

A Symmetric Superconducting Dome Hosts Non-Fermi Liquid Behavior at Optimal Doping in MoS₂

Samples

MoS₂ flake etched into a standard Hall bar and gated with ionic liquid DEME-TFSI for electrical transport measurements.

Materials

Why these are connected

A Symmetric Superconducting Dome Hosts Non-Fermi Liquid Behavior at Optimal Doping in MoS₂

Samples

MoS₂ flake etched into a standard Hall bar and gated with ionic liquid DEME-TFSI for electrical transport measurements.

Materials

Why these are connected

A Symmetric Superconducting Dome Hosts Non-Fermi Liquid Behavior at Optimal Doping in MoS₂

Samples

MoS₂ flake etched into a standard Hall bar and gated with ionic liquid DEME-TFSI for electrical transport measurements.

Materials

Why these are connected

A Symmetric Superconducting Dome Hosts Non-Fermi Liquid Behavior at Optimal Doping in MoS₂

Samples

MoS₂ flake etched into a standard Hall bar and gated with ionic liquid DEME-TFSI for electrical transport measurements.

Materials

Why these are connected

A Symmetric Superconducting Dome Hosts Non-Fermi Liquid Behavior at Optimal Doping in MoS₂

Samples

MoS₂ flake etched into a standard Hall bar and gated with ionic liquid DEME-TFSI for electrical transport measurements.

Materials

Why these are connected

Processing

Characterization

Properties

Processing

Characterization

Properties

Processing

Characterization

Properties

Processing

Characterization

Properties