Large-Scale Integrated Vector-Matrix Multiplication Processor Based on Monolayer MoS2

Guilherme Migliato Marega; Hyun Goo Ji; Zhenyu Wang; Mukesh Tripathi; Aleksandra Radenovic; Andras Kis

doi:10.1038/s41928-023-01064-1

Paper details

Research paper

Experimental Characterization

Large-Scale Integrated Vector-Matrix Multiplication Processor Based on Monolayer MoS₂

Guilherme Migliato Marega, Hyun Goo Ji, Zhenyu Wang, Mukesh Tripathi et al.

2023·10.1038/s41928-023-01064-1·arXiv:2303.07183

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Wafer-scale 32×32 floating-gate field-effect transistor matrix chip using monolayer MoS₂ channels and Pt/HfO₂ floating-gate stack with Cr/Pt gate and Ti/Au source-drain contacts.

1 characterization1 property2 figures

ExperimentalMoS₂Studied MaterialHfO₂Substrate / DielectricPtCapping Or ContactCrCapping Or ContactAuCapping Or ContactTiCapping Or Contact

Materials

MoS₂

Studied Material

Also known as

monolayer MoS₂

Variables

dimensionality= monolayer

studied material

HfO₂

Substrate / Dielectric

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Large-Scale Integrated Vector-Matrix Multiplication Processor Based on Monolayer MoS2 | Matter42 Literature

Large-Scale Integrated Vector-Matrix Multiplication Processor Based on Monolayer MoS₂

Samples

Wafer-scale 32×32 floating-gate field-effect transistor matrix chip using monolayer MoS₂ channels and Pt/HfO₂ floating-gate stack with Cr/Pt gate and Ti/Au source-drain contacts.

Materials

Why these are connected

Large-Scale Integrated Vector-Matrix Multiplication Processor Based on Monolayer MoS₂

Samples

Wafer-scale 32×32 floating-gate field-effect transistor matrix chip using monolayer MoS₂ channels and Pt/HfO₂ floating-gate stack with Cr/Pt gate and Ti/Au source-drain contacts.

Materials

Why these are connected

Large-Scale Integrated Vector-Matrix Multiplication Processor Based on Monolayer MoS₂

Samples

Wafer-scale 32×32 floating-gate field-effect transistor matrix chip using monolayer MoS₂ channels and Pt/HfO₂ floating-gate stack with Cr/Pt gate and Ti/Au source-drain contacts.

Materials

Why these are connected

Large-Scale Integrated Vector-Matrix Multiplication Processor Based on Monolayer MoS₂

Samples

Wafer-scale 32×32 floating-gate field-effect transistor matrix chip using monolayer MoS₂ channels and Pt/HfO₂ floating-gate stack with Cr/Pt gate and Ti/Au source-drain contacts.

Materials

Why these are connected

Large-Scale Integrated Vector-Matrix Multiplication Processor Based on Monolayer MoS₂

Samples

Wafer-scale 32×32 floating-gate field-effect transistor matrix chip using monolayer MoS₂ channels and Pt/HfO₂ floating-gate stack with Cr/Pt gate and Ti/Au source-drain contacts.

Materials

Why these are connected

Large-Scale Integrated Vector-Matrix Multiplication Processor Based on Monolayer MoS₂

Samples

Wafer-scale 32×32 floating-gate field-effect transistor matrix chip using monolayer MoS₂ channels and Pt/HfO₂ floating-gate stack with Cr/Pt gate and Ti/Au source-drain contacts.

Materials

Why these are connected

Large-Scale Integrated Vector-Matrix Multiplication Processor Based on Monolayer MoS₂

Samples

Wafer-scale 32×32 floating-gate field-effect transistor matrix chip using monolayer MoS₂ channels and Pt/HfO₂ floating-gate stack with Cr/Pt gate and Ti/Au source-drain contacts.

Materials

Why these are connected

Large-Scale Integrated Vector-Matrix Multiplication Processor Based on Monolayer MoS₂

Samples

Wafer-scale 32×32 floating-gate field-effect transistor matrix chip using monolayer MoS₂ channels and Pt/HfO₂ floating-gate stack with Cr/Pt gate and Ti/Au source-drain contacts.

Materials

Why these are connected

Characterization

Properties

Characterization

Properties

Characterization

Properties

Characterization

Properties