Research paper
Experimental CharacterizationGated MoS₂/SiN Nanochannel for Tunable Ion Transport and Protein Translocation
Shukun Weng, Ali Douaki, Makusu Tsutsui, German Lanzavecchia et al.
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Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
4 preparations1 characterization5 properties3 figures
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Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
4 preparations1 characterization5 properties3 figures
Related documents with shared materials, methods, properties, or citations.
Exploring Nanoscale Photoresponse Mechanisms for Enhanced Photothermoelectric Effects in van der Waals Interfaces
Direct view of phonon dynamics in atomically thin MoS2
Classical to Quantum Diffusive Transport in Atomically Thin Semiconductors Capped with High-κ Dielectric
Mobility overestimation in MoS2 transistors due to invasive voltage probes
A facile direct device transfer of monolayer MoS2 towards improvement in transistor performances
Enhanced Backgate Tunability on Interfacial Carrier Concentration in Ionic Liquid-Gated MoS2 Devices
Electronic Spectroscopy of Atomic Defects in Molybdenum Disulfide under Ambient Conditions
A back-to-back diode model applied to MoS2 van der Waals Schottky diodes
Breaking the width-scaling limit in high-performance atomically thin 2D nanoribbon transistors
Using Electrical Impedance Spectroscopy to Separately Quantify the Effect of Strain on Nanosheet and Junction Resistance in Printed Nanosheet Networks
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Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
4 preparations1 characterization5 properties3 figures
Related documents with shared materials, methods, properties, or citations.
Exploring Nanoscale Photoresponse Mechanisms for Enhanced Photothermoelectric Effects in van der Waals Interfaces
Direct view of phonon dynamics in atomically thin MoS2
Classical to Quantum Diffusive Transport in Atomically Thin Semiconductors Capped with High-κ Dielectric
Mobility overestimation in MoS2 transistors due to invasive voltage probes
A facile direct device transfer of monolayer MoS2 towards improvement in transistor performances
Enhanced Backgate Tunability on Interfacial Carrier Concentration in Ionic Liquid-Gated MoS2 Devices
Electronic Spectroscopy of Atomic Defects in Molybdenum Disulfide under Ambient Conditions
A back-to-back diode model applied to MoS2 van der Waals Schottky diodes
Breaking the width-scaling limit in high-performance atomically thin 2D nanoribbon transistors
Using Electrical Impedance Spectroscopy to Separately Quantify the Effect of Strain on Nanosheet and Junction Resistance in Printed Nanosheet Networks
Mid-IR Metalens Based on MoS2 Nanopillars
Large-Scale Integrated Vector-Matrix Multiplication Processor Based on Monolayer MoS2
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
4 preparations1 characterization5 properties3 figures
Related documents with shared materials, methods, properties, or citations.
Exploring Nanoscale Photoresponse Mechanisms for Enhanced Photothermoelectric Effects in van der Waals Interfaces
Direct view of phonon dynamics in atomically thin MoS2
Classical to Quantum Diffusive Transport in Atomically Thin Semiconductors Capped with High-κ Dielectric
Mobility overestimation in MoS2 transistors due to invasive voltage probes
A facile direct device transfer of monolayer MoS2 towards improvement in transistor performances
Enhanced Backgate Tunability on Interfacial Carrier Concentration in Ionic Liquid-Gated MoS2 Devices
Electronic Spectroscopy of Atomic Defects in Molybdenum Disulfide under Ambient Conditions
A back-to-back diode model applied to MoS2 van der Waals Schottky diodes
Breaking the width-scaling limit in high-performance atomically thin 2D nanoribbon transistors
Using Electrical Impedance Spectroscopy to Separately Quantify the Effect of Strain on Nanosheet and Junction Resistance in Printed Nanosheet Networks
Mid-IR Metalens Based on MoS2 Nanopillars
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